The invention discloses a method for growing a Ce: YAG monocrystal fluorescent material. The chemical formula of the Ce: YAG monocrystal fluorescent material is (Y<1-x-m>AxCem)3(Al<1-y>By)5O12, wherein x is not less than 0 and not greater than 1, y is not less than 0 and not greater than 1, m is not less than 0 and not greater than 0.05, A is one type from Lu, Tb, Pr, La and Gd, and B is one type from Ga, Ti, Mn, Cr and Zr. The furnace temperature range for crystal growth is 1900 to 2000 DEG C, the temperature gradient of a solid liquid interface in the descending direction of a crucible is 10-50 DEG C/cm, the descending speed of the crucible is 0.1-5mm/h, the directions of (111), (100) and (001) can be adopted for seed crystals, the diameter of the crucible is 30-120 mm, and the height of the crucible is 50-200mm. Through adoption of the Bridgman-Stockbarger method, the method for growing the Ce: YAG monocrystal fluorescent material has the advantages of simplicity in operation, low cost, large size of grown Ce: YAG crystals, less internal defects, high doping concentration and the like.