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100results about How to "Easy to grow" patented technology

Non-linear optical device with C18H16N2O2 single crystal and preparation method of non-linear optical device

The invention relates to a C18H16N2O2 non-linear optical device and a preparation method thereof. The C18H16N2O2 crystal can be prepared by using a spontaneous crystallization cooling method and a seed crystal method, and the growing method of the C18H16N2O2 crystal is simple, easy to operate and low in cost; the prepared C18H16N2O2 non-linear optical crystal has a relatively wide penetration wave section of 0.55-2.2mu m, the powder frequency-doubled effect intensity of the C18H16N2O2 non-linear optical crystal is of 2-3 times of OH1, and the C18H16N2O2 non-linear optical crystal is stable in physical and chemical property and free from deliquescence; the C18H16N2O2 non-linear optical crystal can be used for preparing a non-linear optical device, and at the room temperature, an Ho:Tm:Cr:YAG Q-adjusting laser is used as a light source for inputting infrared light of which the wavelength is 2090nm and outputting infrared laser of which the wavelength is 1045nm; the C18H16N2O2 non-linear optical device comprises a device in which at least one beam of incident electromagnetic radiation passes through at least one piece of the C18H16N2O2 single crystal so as to generate at least one beam of output radiation of which the frequency is different from that of the incident electromagnetic radiation; the device can be a terahertz wave generator, a secondary harmonic generator, an upper frequency converter, a lower frequency converter or an optical parametric oscillator.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system

The invention relates to a method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system. The method comprises the following steps of: growing a buffer layer, a light absorption layer and a wide band gap cap layer which hare matched with lattices on a substrate by using an MBE (molecular beam epitaxy) method or metallorganics vapour phase epitaxy method to obtain an epitaxial structure of a photoelectric detector, wherein the band gap of the light absorption layer can be cut and set during the growth process, and the wide band gap is selected on the premise of meeting cut-off wavelength requirement of the long wave end of the photoelectric detector. According to the invention, the material growing method is simple; by cutting and setting the band gap of the light absorption layer of the photoelectric detector, the device performance can be obviously improved under the condition of basically not changing the original design of the device, and the detectivity can be enhanced by more than three times. The method is not only suitable for manufacturing photoelectric detectors in different kinds of III-V compound material systems, but also suitable for manufacturing other types of photoelectric devices and electronic devices; and the application of the method can be widened to other material systems. The method has a good application prospect.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Method for preparing BiOCl monocrystalline nano-chip

The invention provides a method for preparing a BiOCl monocrystalline nano-chip with a solvent heat method. The preparation is carried out in a stainless steel high-pressure reactor consisting of a polytetrafluoroethylene liner (with the volume of 45ml) and a stainless steel jacket. The preparation is realized by the following technological processes: (1) placing raw materials including BiCl3 (with the purity not smaller than 99.1wt%) and KBH4 (with the purity not smaller than 98.0wt%) into 20-30ml of a mixed solution of deionized water and absolute alcohol, and stirring for reaction, wherein the molar ratio of BiCl3 to KBH4 is 3/5, and the mixed volume ratio of the deionized water to the absolute alcohol is 1/4-1/3; (2) then, pouring the mixed solution with the filling amount of 4/9-2/3 into the polytetrafluoroethylene liner, sleeving the stainless steel jacket, placing into an environment with the temperature of 160-200 DEG C, and preserving the temperature for 16-24 hours; and (3) finally, cooling the high-pressure reactor to room temperature, collecting a reaction product, cleaning, separating, and finally collecting and drying to obtain a BiOCl monocrystalline nano-chip. The BiOCl monocrystalline nano-chip synthesized with the method has the advantages of good dispersity, thin thickness, uniformity in size distribution and good color, and can be widely applied to the fields of coating, inorganic pigments, high-quality cosmetics, pearlescent accessories and the like. The method has the advantages of low raw material price and simple process, and is easy for large-scale industrial production.
Owner:XINJIANG UNIVERSITY

Method for preparing gallium nitride/zinc sulfide nano heterojunction by two-step method

The invention discloses a method for preparing a gallium nitride / zinc sulfide nano heterojunction by a two-step method, which is implemented by the following technical process of placing a ceramic boat with a certain quantity of gallium oxide powder (the purity is 99.999 percent by mass) at the center of a horizontal alundum tube furnace with the length of 100cm; placing a gold-plating substrate at the position with a distance of 20cm to 25cm far away from the ceramic boat; sealing the tube furnace; vacuumizing to the pressure of 2*10<-2>-10<-3>Pa; after heating the horizontal tube furnace to the temperature of 900 to 1,080DEG C under the protection of Ar gas, filling 200sccm of NH3 gas to perform the reaction for two hours; naturally cooling to the room temperature under the protection of the Ar gas to obtain a flaxen product on the substrate; and then placing the substrate on which the flaxen product is deposited on a vacuum thermal evaporating device and ensuring the surface on which the flaxen product is deposited over against a zinc sulfide source (the purity is 99.995 percent by mass), wherein the distance between the source and the substrate is 1 to 2cm and the heating current is 100 to 180A; and the gallium nitride / zinc sulfide nano heterojunction is finally obtained after the color of the product on the substrate is changed into deep yellow. The gallium nitride / zinc sulfide nano heterojunction prepared by the method disclosed by the invention has the characteristic that the gallium nitride / zinc sulfide nano heterojunction with two different heterostructures, i.e. a nano linear core-shell structure and a heterostructure which is of a shape of tomatoes on sticks, is prepared by the two-step method.
Owner:XINJIANG UNIVERSITY

Saline and alkaline land greening cultivating device

InactiveCN108323349AEasy to growConducive to centralized nutrient supply and efficient use of fertilizer and waterReceptacle cultivationNutrientFertilizer
The invention discloses a saline and alkaline land greening cultivating device. The saline and alkaline land greening cultivating device comprises a cultivating cylinder which is provided with an opened top and an opened bottom and is surrounded into a cylinder by the peripheries, and several vent holes are formed in the peripheral wall of the cultivating cylinder; breathable and waterproof degradable film is laid at the bottom of the cultivating cylinder, a breathable supporting net covers the portion, located above the breathable and waterproof degradable film, in the cultivating cylinder, the portion between the breathable supporting net and the breathable and waterproof degradable film is filled with breathable filler, the portion, located above the breathable supporting net, in the cultivating cylinder is filled with greening soil, and a moisture preserving layer is laid above the greening soil. The saline and alkaline land greening cultivating device is simple and reasonable in structure, preserves moisture and is breathable, nutrient supplement and efficient utilization of fertilizer and water are integrated, and the saline and alkaline land cultivating device is convenientto manage and control and particularly applicable to multi-point greening in a saline and alkaline land area.
Owner:WEIFANG YOURONG IND

Growth method of large-sized silicon carbide polycrystalline ceramic adjustable in electrical resistivity

The invention relates to a growth method of a large-sized silicon carbide polycrystalline ceramic adjustable in electrical resistivity. A silicon carbide raw material is contained by adopting a graphite crucible, the graphite crucible is composed of a graphite crucible top cover and a graphite crucible body, the inner surface of the graphite crucible is provided with a carbon film layer, the silicon carbide raw material is put in the graphite crucible body, the graphite crucible top cover is put on, the graphite crucible body is put in a growth furnace, the bottom and/or the lower portion of the graphite crucible body is located in a heating zone to make the temperature at the bottom of the graphite crucible body higher than that of the graphite crucible top cover, and a silicon carbide polycrystalline ceramic material grows on the surface of the carbon film layer by adopting a physical gaseous phase transmission method or a high-temperature chemical vapor deposition method. The growth method is simple, and the silicon carbide polycrystalline ceramic is more excellent in performance, better in uniformity, better in compactness, higher in purity and better in thermal conductivity compared with a traditional silicon carbide ceramic.
Owner:安徽微芯长江半导体材料有限公司

Multifunctional air heating device

The invention discloses a multifunctional air heating device, which comprises a base. A support rod is arranged on the upper end of the base. A servo motor is arranged on the upper end of the supportmotor. A rotating shaft is arranged on the upper end of the servo motor. A support plate is arranged at the upper end of the rotating shaft. An electric telescopic rod is fixed on the upper end of thesupport plate. A fixed plate is arranged on the upper end of the electric telescopic rod. A mounting plate is arranged on the upper end of the fixed plate. An air duct is arranged on the upper end ofthe mounting plate. A filter cartridge is installed on the right side inside the air duct. A first filter net, a second filter net and a third filter net are arranged in turn from right to left inside the filter cartridge. A heating box is fixed inside the air duct. A number of heating plates are installed in the heating box. The heating box is provided with an air inlet and an air outlet on theleft and right sides thereof respectively. The air duct is internally provided with a fixed rod which is arranged at the left end of the heating box. A blower is installed on the fixed rod. A water storage tank is installed on the upper end of the air duct. A water pump is installed at the inner bottom of the water storage tank. The water pump is connected with a spray pipe through a connecting pipe. A number of atomizing nozzles are arranged at the lower end of the spray pipe.
Owner:温海青

C15H11NO2S nonlinear optical crystal and preparation method and application thereof

The invention discloses a C15H11NO2S nonlinear optical crystal which does not have a symmetry center, and belongs to a monoclinic system. The space group is Pc, and the cell parameters are as follows: a=9.466 A', b=6.060 A', c=11.771 A', alpha=gamma=90 degrees, beta=106.248 degrees, Z=2, and V=648.3 A'<3>; a spontaneous crystallization volatilization method, a falling temperature method and a seed crystal method can be adopted for crystal growth, the characteristics of high growth rate and low cost are achieved, and the large-size and high-quality crystal can easily grow; the obtained C15H11NO2S crystal powder has the double-frequency effect strength being 1-2 times of OH1, is stable in chemical property, does not deliquesce, meets needs of infrared band laser frequency conversion, and can be used for manufacturing a nonlinear optical apparatus; the apparatus comprise a device which can enable at least one beam of incident electromagnetic radiation to pass through at least one piece of C15H11NO2S nonlinear optical crystal so as to generate at least one beam of output radiation of which the frequency is different from that of the incident electromagnetic radiation.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

Three-dimensional ultrasonic array scaffold-free cell printing device and printing process thereof

The invention provides a three-dimensional ultrasonic array scaffold-free cell printing device and a printing process thereof. The three-dimensional ultrasonic array scaffold-free cell printing device comprises a cell conveying mechanism, a printing platform, a platform driving mechanism, a conveying driving mechanism and a three-dimensional ultrasonic array micro potential well generation system, wherein the printing platform is installed on the platform driving mechanism; the cell conveying mechanism is installed on the conveying driving mechanism; the three-dimensional ultrasonic array micro potential well generation system is connected with the printing platform; a planar sound pressure micro potential well is formed in the printing platform; a plurality of planar sound pressure micro potential wells with different heights are formed on the printing platform, so that cells needing to be printed at different heights are positioned; and a cell three-dimensional system is constructed in the mode of constructing a three-dimensional array sound pressure potential well, controllability is better, and the three-dimensional ultrasonic array scaffold-free cell printing device can be used for cell three-dimensional printing under various cells and various environments and has excellent universality.
Owner:HANGZHOU DIANZI UNIV

Low-cost rapid micropropagation method for excellent eucommia ulmoides seedlings

ActiveCN113080064AHigh speedAvoid the defects of low survival rate of domestication and transplantingHorticulture methodsPlant tissue cultureAxillary budPlantlet
The invention discloses a low-cost rapid micropropagation method for excellent eucommia ulmoides seedlings. The method comprises the following steps: by taking a micro-stem segment with one leaf and one bud of an eucommia ulmoides strain as an explant, performing pretreatment, performing adventitious root induction treatment, performing field planting of the explant, performing adventitious root induction culture, performing axillary bud germination induction of the explant, performing seedling culture and the like. A rooting inducer is adopted to treat the stem segments for 30 s, adventitious root primordia are formed in 7-10 d, complete eucommia ulmoides regenerated plants can be obtained in 22 d, the speed is higher than that of rapid propagation of eucommia ulmoides through a traditional propagation method and a tissue culture technology, and the propagation period is greatly shortened; and according to the method, the micro-stem segments are inserted into a seedling raising plate filled with a nutrient medium and directly take roots and seedlings in a greenhouse, on one hand, the influence and limitation of natural factors such as seasons and regions are avoided, and on the other hand, the defects that the tissue culture and breeding process of eucommia ulmoides is tedious and the domestication and transplanting survival rate of subsequent tissue culture regeneration seedlings is low are overcome.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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