Method for preparing gallium nitride/zinc sulfide nano heterojunction by two-step method

A technology of zinc sulfide and heterojunction, applied in the direction of zinc sulfide, nanotechnology, nanotechnology, etc., can solve the problems of complex process, high cost and unsuitable for large-scale application in industrial production

Inactive Publication Date: 2012-09-12
XINJIANG UNIVERSITY
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0008] The gallium nitride-based nano-heterojunction prepared by the various methods reported above has high cost and is not suitable for large-scale application in industrial production. At the same time, some processes are very complicated. The simpler two-step method of chemical vapor deposition and vacuum thermal evaporation Obtaining GaN / ZnS nanoheterojunctions with two different morphologies has not been reported

Method used

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  • Method for preparing gallium nitride/zinc sulfide nano heterojunction by two-step method
  • Method for preparing gallium nitride/zinc sulfide nano heterojunction by two-step method
  • Method for preparing gallium nitride/zinc sulfide nano heterojunction by two-step method

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Comparison scheme
Effect test

Embodiment 1

[0020] Place a ceramic boat containing a certain amount of gallium oxide (purity: 99.999% by mass) powder in the middle of the horizontal tube furnace, and place a gold-plated Si (100) sheet at a distance of 20 cm from the ceramic boat as a collection substrate for the product , sealed horizontal tube furnace and then evacuated to 2×10 -2 Pa, tube furnace heated to 1080 in Ar atmosphere o C, stop feeding Ar, feed 200sccm NH 3 gas reaction for 2 hours, and finally cooled to room temperature naturally under Ar atmosphere, and a pale yellow product was obtained on the collection substrate. Then carry out the second step, place the Si sheet deposited with the light yellow product on the sample holder of the vacuum thermal evaporation instrument, the deposition side is facing down, and the molybdenum boat with zinc sulfide (purity being 99.995% by mass) is directly facing below . The Si substrate and ZnS were separated by 1.5 cm. After installing the instrument, evacuate to 10 ...

Embodiment 2

[0023] Place a ceramic boat containing a certain amount of gallium oxide (purity: 99.999% by mass) powder in the middle of the horizontal tube furnace, and place a gold-plated Si (100) sheet at a distance of 20 cm from the ceramic boat as a collection substrate for the product , sealed horizontal tube furnace and then evacuated to 2×10 -3 Pa, tube furnace heated to 1080 in Ar atmosphere o C, stop feeding Ar, feed 200sccm NH 3 gas reaction for 2 hours, and finally cooled to room temperature naturally under Ar atmosphere, and a pale yellow product was obtained on the collection substrate. Then carry out the second step, place the Si sheet deposited with the light yellow product on the sample holder of the vacuum thermal evaporation instrument, the deposition side is facing down, and the molybdenum boat with zinc sulfide (purity being 99.995% by mass) is directly facing below . The Si substrate and ZnS were separated by 1.5 cm. After installing the instrument, evacuate to 10 ...

Embodiment 3

[0026] Place a ceramic boat containing a certain amount of gallium oxide (purity: 99.999% by mass) powder in the middle of the horizontal tube furnace, and place a gold-plated Si (100) sheet at a distance of 25 cm from the ceramic boat as a collection substrate for the product , sealed horizontal tube furnace and then evacuated to 2×10 -2 Pa, tube furnace heated to 1080 in Ar atmosphere o C, stop feeding Ar, feed 200sccm NH 3 gas reaction for 2 hours, and finally cooled to room temperature naturally under Ar atmosphere, and a pale yellow product was obtained on the collection substrate. Then carry out the second step, place the Si sheet deposited with the light yellow product on the sample holder of the vacuum thermal evaporation instrument, the deposition side is facing down, and the molybdenum boat with zinc sulfide (purity being 99.995% by mass) is directly facing below . The Si substrate and ZnS were separated by 1.5 cm. After installing the instrument, evacuate to 10 ...

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Abstract

The invention discloses a method for preparing a gallium nitride / zinc sulfide nano heterojunction by a two-step method, which is implemented by the following technical process of placing a ceramic boat with a certain quantity of gallium oxide powder (the purity is 99.999 percent by mass) at the center of a horizontal alundum tube furnace with the length of 100cm; placing a gold-plating substrate at the position with a distance of 20cm to 25cm far away from the ceramic boat; sealing the tube furnace; vacuumizing to the pressure of 2*10<-2>-10<-3>Pa; after heating the horizontal tube furnace to the temperature of 900 to 1,080DEG C under the protection of Ar gas, filling 200sccm of NH3 gas to perform the reaction for two hours; naturally cooling to the room temperature under the protection of the Ar gas to obtain a flaxen product on the substrate; and then placing the substrate on which the flaxen product is deposited on a vacuum thermal evaporating device and ensuring the surface on which the flaxen product is deposited over against a zinc sulfide source (the purity is 99.995 percent by mass), wherein the distance between the source and the substrate is 1 to 2cm and the heating current is 100 to 180A; and the gallium nitride / zinc sulfide nano heterojunction is finally obtained after the color of the product on the substrate is changed into deep yellow. The gallium nitride / zinc sulfide nano heterojunction prepared by the method disclosed by the invention has the characteristic that the gallium nitride / zinc sulfide nano heterojunction with two different heterostructures, i.e. a nano linear core-shell structure and a heterostructure which is of a shape of tomatoes on sticks, is prepared by the two-step method.

Description

technical field [0001] The invention belongs to the field of nano-heterostructure preparation, and relates to a method for preparing gallium nitride / zinc sulfide heterojunction. Background technique [0002] Gallium nitride is a direct bandgap wide bandgap semiconductor material (bandgap width is 3.39eV), gallium nitride, silicon carbide and other materials are called third-generation semiconductor materials. Because gallium nitride has high thermal conductivity, high melting point, high degree of ionization and high hardness. At the same time, its luminous efficiency is high, and it has great application prospects in ultraviolet, purple, blue, and green light-emitting devices. Zinc sulfide is also a wide-bandgap semiconductor material, with a band gap of 3.7eV at room temperature. It is one of the earliest discovered synthetic semiconductors, and it has very significant applications in the electronics and optoelectronics industries. [0003] Scientific research in recent ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/08C01B21/06B82Y30/00B82Y40/00
Inventor 张艾莉简基康吴荣李锦孙言飞
Owner XINJIANG UNIVERSITY
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