Method for preparing independent self-supporting transparent aluminium nitride nanocrystalline film

An aluminum nitride, self-supporting technology, applied in nanotechnology, gaseous chemical plating, metal material coating process, etc., to achieve the effects of low cost, simple growth method and high light transmittance

Inactive Publication Date: 2011-08-17
XINJIANG UNIVERSITY
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The aluminum nitride nanostructures prepared by the various methods reported above are all attached to a certain substrate, or powders dispersed in disorder, and are composed of nanocrystals microscopically and independently macroscopically by a relatively simple method. Self-supporting transparent aluminum nitride nanocrystalline films have not been reported yet

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing independent self-supporting transparent aluminium nitride nanocrystalline film
  • Method for preparing independent self-supporting transparent aluminium nitride nanocrystalline film
  • Method for preparing independent self-supporting transparent aluminium nitride nanocrystalline film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A certain amount of anhydrous AlCl 3 (Purity is 99% by mass) The ceramic boat of powder is placed on the upper free nozzle 6cm place of horizontal tube furnace, places ceramic sheet and quartz sheet as the collection substrate of product at 25cm away from ceramic boat, airtight horizontal tube furnace Then evacuate to 2×10 -2 Pa, heat the tube furnace to 850°C in an Ar atmosphere, stop feeding Ar, and feed 200 sccm of NH 3 gas reaction for 4 hours, and finally cooled naturally to room temperature under Ar atmosphere, and an independent self-supporting transparent film product that can be detached from the substrate was obtained on the collection substrate. The XRD pattern analysis results of the resulting product show that it is a wurtzite structure aluminum nitride that grows preferentially along the (002) direction, such as figure 1 shown. Its scanning electron micrograph shows that the microstructure of the obtained product is a nanocrystal array, such as figure...

Embodiment 2

[0023] Will contain a certain amount of anhydrous AlCl 3 (Purity is 99% by mass) The ceramic boat of powder is placed on the horizontal tube furnace upper free nozzle 6cm place, a plurality of small quartz tubes (diameter is 2cm, long about 10cm) are placed in parallel at the lower free ceramic boat 20cm place as product collection device, the closed tube furnace is evacuated to 2×10 -2 Pa, heat the tube furnace to 900°C in an Ar atmosphere, stop feeding Ar, and feed 250 sccm of NH 3 Gas, reacted for 4 hours, and finally cooled naturally to room temperature under Ar atmosphere, and a large number of independent self-supporting transparent aluminum nitride films were obtained in the downstream quartz tube.

Embodiment 3

[0025] Will contain a certain amount of anhydrous AlCl 3 (Purity is mass percentage 99%) the ceramic boat of powder is placed on the upper free nozzle 6cm place of horizontal tube furnace, place graphite paper as product collector at 25cm place away from ceramic boat, airtight horizontal tube furnace is then evacuated to 2 ×10 -2 Pa, heat the tube furnace to 850°C in an Ar atmosphere, and feed 200 sccm of NH 3 Gas and the Ar flow rate was adjusted to 50 sccm, reacted for 4 hours, and finally cooled naturally to room temperature in an Ar atmosphere, and a large number of self-supporting transparent aluminum nitride films were collected on graphite paper.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing an independent self-supporting transparent aluminium nitride nanocrystalline film, and the method is realized through the following processes: placing a ceramic boat loaded with a certain quantity of absolute AlCl3 (with the purity of 98-99wt%) powder on a position, 6-9cm away from a tube orifice, on the upstream of the airflow direction of a horizontal tube furnace with the length of 100cm; placing a quartz tube, a ceramic sheet and the like on a position 20-25cm away from the ceramic boat so as to be used as a product collector; vacuumizing the sealed tube furnace to 2*10<-2>-10<3>Pa; heating the horizontal tube furnace to 760-900 DEG C in the presence of Ar gas; introducing 200-300sccm of NH3 for reaction for four hours; and naturally cooling to room temperature in the presence of the Ar gas to obtain the independent self-supporting transparent aluminium nitride film on the collector. The film prepared in the invention is the aluminium nitride of a wurtzite structure and is characterized of being a nano crystal array microcosmically and an independent self-supporting and transparent aluminium nitride film macrocosmically.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and relates to a method for preparing an independent self-supporting transparent aluminum nitride nanocrystal film. Background technique [0002] Aluminum nitride is a direct bandgap wide bandgap semiconductor material (bandgap width is 6.2ev), gallium nitride, silicon carbide and other materials are called third-generation semiconductor materials. Because aluminum nitride has high thermal conductivity, high melting point, corrosion resistance, and small electron affinity, the emission wavelength of the interband transition can go deep into the deep ultraviolet band, and can be widely used in optoelectronic devices. [0003] Scientific research in recent years has shown that nanomaterials can show some excellent physical and chemical properties, and have important application value in the field of industrial technology. At present, many results have been reported on the growth of aluminum nit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/44B82Y40/00
Inventor 简基康李加杰杨建强李海兵吴荣李锦
Owner XINJIANG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap