247 results about "Aluminum thin film" patented technology

A method for lithium aluminum film packaging materials, with water, high temperature and corrosion resistance, the substrate layer, and then layer, aluminum foil layer, anti-corrosion layer, adhesive layer and the inner layer together constitute from the outermost to innermost layer laminate structure in which one side of the aluminum foil layer, or both side surface of the conductive coating material to said coating and curing anticorrosive layer, and the use of fluorine-containing polyurethane resin constituting the laminated rubber layer and the inner layer of corrosion between the adhesive layer, used lithium batteries as plastic film packaging applications, it can promote lithium battery with Merit water resistance, high temperature resistance and corrosion resistance, and enhance the use of lithium batteries in years.

The invention relates to a method for preparing a nano porous copper thin film material by magnetron sputtering. The method takes a commercial copper foil as a base body material and takes high-purity copper target and aluminum target as sputtering materials; magnetron sputtering equipment is a preparation tool; a nano porous copper thin film is obtained by sputtering a copper-aluminum thin film through a glow discharge principle, and dealloying and corroding to remove an active component aluminum after annealing and alloying. The method provided by the invention is a two-step reaction method, the problems in the prior art that steps for carrying out smelting, ball milling and melt spinning on alloy auxiliary materials are complicated and consumed time is long are solved, and steps of a preparation process are simplified; a nano porous structure of nano porous copper is obtained and the size of the thin film is controllable; the obtained structure is better than a nano porous copper powder sample obtained by a traditional method; furthermore, an application range of the nano porous copper is enlarged and the nano porous copper has a commercial prospect.

A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

An alumina nanohole array and a method of fabricating the same includes the steps of forming an aluminum thin-film on a substrate at a substrate temperature of −80° C. or below so that crystal grain growth is suppressed, even when a high-purity aluminum material is used, thus providing improved surface smoothness; and anodizing the aluminum thin-film. Preferably, the method additionally includes texturing by pressing a mold having an orderly array of projections against the aluminum thin-film to form pits on the aluminum thin-film which enables a larger array area to be formed. When the mold and the aluminum thin-film are held at a temperature of 150 to 200° C., the pressure used for pit formation is reduced. A magnetic recording medium manufactured by a method therefore includes forming a magnetic layer within the nanoholes so that the medium is suitable as a bit patterned media for a perpendicular recording system.

The invention discloses a silicon-based heterojunction solar cell which comprises grid electrodes, a transparent conductive film, a boron-doped amorphous silicon, an intrinsic amorphous silicon, an N-type monocrystalline and a back electrode in sequence, wherein the back electrode is formed by a distributed Bragg reflector and an aluminum thin film, the distributed Bragg reflector is formed by arranging niobium-doped titanium dioxide thin films and aluminum-doped zinc oxide thin films at intervals, and the aluminum thin film is arranged on the surface layer of the aluminum-doped zinc oxide thin film on the outermost layer of the distributed Bragg reflector. The distributed Bragg reflector used as the back electrode consists of two transparent conductive films with different refraction indexes, so that the resistance of the cell device connected in series is reduced, the collection of current carriers is facilitated, and the photoelectric conversion efficiency of the cell is high; and by adopting the back-reflecting electrode formed by combining the distributed Bragg reflector and the aluminum anode, the long wave band of the near infrared part with characteristic wavelength can be reflected to the inside of the crystalline silicon wafer to be reabsorbed through the two layers of conductive films with different refractive indexes, so that both the current and the photoelectric conversion efficiency of the cell are improved.

The invention discloses an N-type single crystal silicon substrate PN junction inversion layer battery, which comprises an N-type single crystal silicon substrate, a front electrode, a rear electrode, a front surface aluminum sesquioxide film and a silicon nitride film, wherein the front electrode comprises a local boron diffusion area, a Ti/Pb film and a front surface metal electrode; and the rear electrode comprises a rear surface metal electrode and a rear surface aluminum sesquioxide film. The invention also discloses a manufacturing method for the N-type single crystal silicon substrate PN junction inversion layer battery. The Al2O3 carries fixed negative charges, a P-type inversion layer is induced on the front surface of the N-type single crystal silicon substrate, and a front electric field is provided; and in the absence of the influence of boron doping, the stability of the battery is improved, meanwhile, the absorption on short wave is reduced, blue light response is improved, the short circuit current density of the battery is improved, and the efficiency of the battery is promoted.

The invention discloses a collector of super capacitor and the surface processing method, which is characterized in that a collector body film can be an aluminum film, a copper foil, a foam nickel film, a stainless steel film or punching nickel film; the purity of aluminum is over 99.9%; the thickness of the corrosion aluminum foil is 15 to 50 Mum; the roughness is 1.5 to 3.0 Mum; the collector body is spongy under 20000X electronic microscope; the average diameter of the corrosion hole is 0.05 to 0.2 Mum; 5 to 10 billion holes are arranged in the area of 1 cm2; the tensile strength is 1.0 to3.0 kg/cm. The invention has the advantages that chromic acid mixture is adopted for chemical treatment for the surface of the current collector; dust on the surface of aluminum foil of the current collector during storage and transportation can be removed; anti-septic oil and anti-sticking agent on the aluminum foil during machining process are also effectively removed; active functional groups are added, enabling even and consistent distribution of coated electrode material; the adhesion strength of the electrode film is improved; internal resistance of the electrode is reduced, the specificsurface area is increased; the collector is applicable to large scale production.

The invention relates to a holographic anti-counterfeiting printing industrial material, in particular to a laser electrolytic aluminum film regeneration coating and a preparation method thereof, and provides a method for overcoming product defects and improving the die pressing property of a half-finished die belt, a laser electrolytic aluminum film regeneration coating for reusing a half-finished product which is difficult for die pressing, and a preparation method thereof. A regeneration zone of which the temperature resistance range is 200-225 DEG C is coated between an imaging layer and an aluminum-plated layer; and the coating consists of the following components in parts by weight: 100 parts of acrylic resin, 0.1-1 part of nano silica, 0.3 parts of anti-foaming agent, 0.2 parts of flatting agent, 0.5 parts of pH value adjusting agent, and a solvent consisting of 37-118 parts of ethyl acetate and 37-118 parts of butyl acetate in the mixture ratio of 1:1. According to different components of a coating composition, the defects of poor temperature resistance and high rejection rate of a film coating are overcome, the problems of peeling and plate adhering are solved, the operation is easy, the production yield is increased, and the die pressing fie belt has high surface brightness and excellent representation.

The present invention provides an epitaxial structure of an ultraviolet LED with an aluminum nitride film and a growth method of the aluminum nitride film. The growth method of the aluminum nitride film includes the following steps that: 1) a metal layer is grown on a substrate; 2) annealing treatment is performed on the substrate, so that the metal layer can form a metal ball-shaped object layer;3) etching treatment is performed on the substrate, so that a pitted substrate can be formed; 4) when temperature rises to 600 to 1200 DEG C, trimethylaluminum and ammonia gas are introduced into a reaction chamber, so that a buffer growth layer can be to grown; 5) when temperature rises to 1250 to 1450 DEG C, first growth mode/second growth mode alternate cyclic growth is carried out, so that anintermediate-state aluminum nitride layer can be formed; and 6) when temperature drops to 1100 to 1250 DEG C, the trimethylaluminum and ammonia are introduced into the aluminum nitride layer, so thatthird growth mode growth can be performed. The aluminum nitride film obtained by using the method has good crystal quality; and the surface cracks of the aluminum nitride film can be reduced.

The invention relates to a zinc oxide piezoelectric film for an SAW (Surface Acoustic Wave) device, which is of a zinc oxide/aluminum/diamond-like composite film structure. A manufacturing method comprises the following steps of: placing single crystal silicon wafer with the cleaned surface into a vacuum growth cavity of a pulse laser system, depositing the diamond-like/aluminum thin film with graphite and aluminum as a target material; and depositing a zinc oxide film on the surface of the Al film with the zinc oxide as the target material through a radio-frequency magnetron sputtering process. The invention has the advantages that: the manufacturing method is simple and feasible and has low cost; the prepared diamond-like film surface is smooth and flat so as to be capable of largely reducing sound wave loss in a transmission process, the deposited Al film largely improves the electromechanical coupling coefficients of the zinc oxide film, the crystallization degree of the zinc oxide film is high, c-axis orientation is high, and the zinc oxide/aluminum/diamond-like composite film structure can be used for manufacturing high-performance, high-frequency and high power devices.

The invention discloses a polyethylene aluminum-plated film with metal luster of an aluminum foil diffuse surface. An aluminum-plated functional layer comprises 50 to 80 parts of polyethylene and 20 to 50 parts of ethylene acrylic acid copolymer or ethylene methyl acrylate copolymer or ethylene vinyl acetate copolymer. The ethylene acrylic acid copolymer or ethylene methyl acrylate copolymer or ethylene vinyl acetate copolymer is added into the polyethylene, the polarity of the material and the binding force of the material with an aluminum material are improved, and after the film is processed through a film blowing or casting process, the surface haze is improved; meanwhile, the aluminum foil diffuse surface is formed, and the polyethylene aluminum-plated film with metal luster of the aluminum foil diffuse surface is formed through vacuum aluminum plating. The appearance of the product has the metal luster of the aluminum foil diffuse surface, and the product has ideal processability, excellent aluminum adhesive force, excellent gas barrier property, excellent moisture barrier property, good heat sealing performance and low-temperature mechanical property, and is suitable for mass production and low in industrial production cost.

A visible light-reflecting member is disclosed which uses a plate or a film for reflecting visible lights, whose reflective surface is provided with an aluminum thin film having an aluminum purity of not less than 99 mass % and an X-ray diffraction pattern wherein, among peak intensities ascribed to aluminum, the peak intensity ascribed to the (111) plane is higher than the total of the other peak intensities.

The invention relates to a homogeneous epitaxial growth method of a high-quality aluminum nitride film. The homogeneous epitaxial growth method of the high-quality aluminum nitride film based on an aluminum nitride substrate is carried out in MOCVD equipment, and comprises the following steps: selecting an aluminum nitride substrate; putting the substrate into an MOCVD reaction cavity, and heatingto bake the substrate; introducing ammonia gas (NH3) to protect the substrate, further increasing the growth temperature, introducing trimethylaluminum (TMAl) and ammonia gas (NH3) at the same time,and growing a first aluminum nitride (AlN) optimization layer at a low growth rate; and then reducing the growth temperature, and increasing the growth rate to grow a second high-quality AlN epitaxialfilm. The method has the advantages that the method is simple and feasible, the growth period is short, the material performance is good, and the method is an effective solution for realizing high-quality and low-cost growth of the AlN epitaxial film.