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Method for forming aluminum thin film

A technology of aluminum thin film and aluminum metal, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that the aluminum thin film part cannot be etched and removed, and affects the reliability of the aluminum interconnection structure, etc.

Inactive Publication Date: 2011-11-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
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Problems solved by technology

The process of patterning the photoresist layer to form the photoresist pattern 104 includes exposure, development and fixing, etc., because the developing solution and other reagents used in the photolithography process are generally acidic or alkaline, such as positive photoresist The developer tetramethylammonium hydroxide ((CH 3 ) 4 NOH) is a strong alkalinity, and the developing solution will corrode the exposed aluminum material in the region 102a, so that the corroded aluminum film part cannot be etched and removed in the subsequent etching process, such as Figure 7 shown, corresponding to Image 6 A residue 102b is formed at the position of the middle region 102a, which affects the reliability of the entire aluminum interconnection structure

Method used

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  • Method for forming aluminum thin film
  • Method for forming aluminum thin film
  • Method for forming aluminum thin film

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Embodiment Construction

[0030] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0031] In the following description, specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific embodiments disclosed below.

[0032] The formation process of aluminum thin films in the prior art is generally formed at one time by sputtering, such as Figure 8 As shown, the inventors have found through research that as the thickness of the formed aluminum film increases, the grain size in the aluminum film gradual...

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Abstract

The invention discloses a method for forming an aluminum thin film. The method comprises the following steps of: providing a substrate; and gradually forming the aluminum thin film on the substrate by using at least two sub-steps of forming an aluminum metal layer, wherein the thickness of the aluminum metal layer which is formed in each sub-step is less than or equal to 0.45 mu m. By the method, the size of grains in the aluminum thin film is reduced, and the surface quality of the aluminum thin film is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming an aluminum thin film. Background technique [0002] Aluminum or copper is generally used as the material for the interconnection layer of integrated circuits. When an aluminum interconnection structure is selected, an aluminum film is usually formed by sputtering, and then the aluminum film is patterned by etching to form an aluminum interconnection structure. [0003] Sputtering is a type of physical vapor deposition (PVD) and is a common method for depositing metal and alloy material layers in integrated circuit manufacturing processes. During sputtering, place the target made of the wafer and the metal material to be deposited in a vacuum reaction chamber, and set the target as a negative bias; Plasma generates argon ions, and the positively charged argon ions impact the target, sputtering metal atoms from the target, and a part of the metal atoms...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/3205H01L21/321
Inventor 张冠群顾佳玉林艺辉林保璋
Owner SEMICON MFG INT (SHANGHAI) CORP
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