667 results about "Negative bias" patented technology

An organic light emitting display device includes a display unit having pixels located at crossing regions of scan, control, data and sensing lines. Scan, control line, and data drivers respectively supply scan, control, and data signals to the scan, control, and data lines. A switching unit selectively couples the data lines to output lines of the data driver, a reference voltage source, or a negative bias voltage source. A sensing unit senses degradation information of an organic light emitting diode in the pixels and threshold voltage of a driving transistor in the pixels through the sensing lines. A control block stores the sensed degradation information and threshold voltage information. A timing controller is configured to generate a second data by converting an externally inputted first data using the degradation information and the threshold voltage information, and supply the second data to the data driver.

Methods of operating non-volatile memory devices are described. The memory devices comprise memory cells having an n-type semiconductor substrate and p-type source and drain regions disposed below a surface of the substrate and separated by a channel region. A tunneling dielectric layer is disposed above the channel region. A charge storage layer is disposed above the tunneling dielectric layer. An upper insulating layer is disposed above the charge storage layer, and a gate is disposed above the upper insulating multi-layer structure. A positive bias is applied to a word lines of the memory device in a selected memory cell and a negative bias is applied to a bit line in the selected cell.

A method of operating a memory device is disclosed, wherein the memory device includes an n-type substrate and a plurality of memory cells formed thereon, each memory cell corresponding to a word line, a first bit line, and second bit line, and including a first bit portion and a second bit portion each for storing one bit of information. The method includes resetting a selected memory cell by applying a first negative bias to the word line of the selected memory cell and applying a ground bias to the first and second bit lines, and programming the first bit portion of the selected memory cell by applying a first positive bias to the word line of the selected memory cell, applying a second negative bias to the first bit line of the selected memory cell, and applying a ground bias to the second bit line of the selected memory cell.

A negative bias is applied to an integrated circuit wafer immersed in an electrolytic plating solution to generate a DC current. After about ten percent to sixty percent of the final layer thickness has formed in a first plating time, biasing is interrupted during short pauses during a second plating time to generate substantially zero DC current. The pauses are from about 2 milliseconds to 5 seconds long, and typically about 10 milliseconds to 500 milliseconds. Generally, about 2 pauses to 100 pauses are used, and typically about 3 pauses to 15 pauses. Generally, the DC current density during the second plating time is greater than the DC current density during the initial plating time. Typically, the integrated circuit wafer is rotated during electroplating. Preferably, the wafer is rotated at a slower rotation rate during the second plating time than during the first plating time.

The present invention provides an inexpensive radio frequency switching circuit having desirable radio frequency characteristics over a wide band and desirable endurance against the inflow of a high voltage signal such as an electrostatic surge. Either a negative bias voltage or a positive bias voltage being greater than or equal to 0V and less than or equal to a Schottky forward voltage is used for the control terminals V11 and V12 for controlling FETs 11 to 18 and FETs 21 to 28 so as to turn ON/OFF the path extending from the first input/output terminal P11 to the second input/output terminal P12 and the path extending from the first input/output terminal P11 to the third input/output terminal P13. Thus, it is possible to eliminate the need for DC cut capacitors.

The invention discloses a method for preparing a multi-metal element doped diamond film, which is characterized by comprising the following steps: removing a pollution layer on matrix surface by using the ultrasonic cleaning technology, carrying out ion beam bombardment cleaning on the matrix surface by using inert gas ion beam produced by an ion source, carrying out metal ion bombardment cleaning on the matrix surface by using metal ions produced by a cathodic arc source under a condition of high workpiece negative bias, preparing a gradient transition layer by using a cathodic arc deposition or ion beam assisted magnetron sputtering (IBAMS), and synthesizing a multi-metal element doped DLC film on the transition layer by using ion beam deposition and mosaic composite target magnetron sputtering, wherein the ion beam deposition is realized by introducing carbon gas in the ion source; and the mosaic composite target doped multiple metal are used, and the main body material of the mosaic composite target can be any one of Ti, Cr, W, Zr, Nb and Ta, and the mosaic block material is one or more of other metals except the above main body materials.

The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum source is connected at an exit opening. Pressure within the workpiece is monitored and the resulting pressure information is used for maintaining a condition that exhibits the hollow cathode effect. Optionally, a pre-cleaning may be provided by introducing a hydrocarbon mixture and applying a negative bias to the workpiece, so as to sputter contaminants from the workpiece using argon gas. Argon gas may also be introduced during the coating processing to re-sputter the coating, thereby improving uniformity along the length of the workpiece. The coating may be a diamond-like carbon material having properties which are determined by controlling ion bombardment energy.

The invention provides conductive fibers and a preparation method thereof. The preparation method comprises the following steps that: firstly, the fibers are subjected to warping; secondly, the warped row of fibers is subjected to plasma processing; thirdly, the processed fibers are plated by vacuum physically to generate a physically plated metal coating, the order of magnitude of the specific resistance is between 10<7> and 10<0>Omega.cm; the metal coating is mainly used for being anti-static and sterilizing clothes; a metal layer is plated outside the physically plated metal coating, the order of magnitude of the specific resistance is less than or equal to 10<0>Omega.cm; the metal layer is mainly used for shielding electromagnetic wave and absorbing materials; and the plasma processing comprises the ion beam processing or the negative bias addition. The preparation method has simple technique, low cost, and strong feasibility of the industrial production on a large scale. The manufactured conductive fibers have the characteristics that the product is combined firmly, the dyeing property and the conductivity are good, the chemical resistance and the wash resistance are good and the tactility is soft.

Positive and negative bias magnetic fields are applied to a sensor unit 12 to determine first and second output voltages. A first difference between the first and second output voltages is calculated. Next, correction bias magnetic fields, each of which is obtained by adding an additional bias magnetic field to a corresponding one of the positive and negative bias magnetic fields, are applied to the sensor unit 12 to determine first and second output voltages. A second difference between the first and second output voltages is calculated. Then, the first difference is compared with the second difference. When the first difference is larger than the second difference, the magnitude of the additional bias magnetic field is increased to minimize the difference, i.e., to made the difference substantially zero.

A stratified or segmented composite portfolio can be formed by selecting a group of investment securities, stratifying or segmenting them according to attributes that correlate to a specific asset risk, and assigning relative portfolio weights to the components based on their stratified or segmented positions. The attributes are selected from a universe of possible values. Further positive and negative biases can be applied at any arbitrary point or position, including to individual assets, groups of arbitrarily selected assets, or arbitrary positions.

This invention is a method for metal plasma ion implantation and metal plasma ion deposition, comprising: providing a vacuum chamber with at least one workpiece having a surface positioned on a worktable within the vacuum chamber; reducing the pressure in the vacuum chamber; generating a plasma of metal ions within the vacuum chamber, applying a negative bias to the worktable to thereby accelerate metal ions from the plasma toward at least one workpiece to thereby either implant metal ions into or deposit metal ions onto the workpiece or both. This invention includes an apparatus for metal ion implantation and metal ion plasma deposition, comprising: a vacuum chamber, a metal plasma generator within the vacuum chamber, and at least one worktable within the vacuum chamber.

A simulator for accurately simulating a deterioration amount and a recovery amount of transistor characteristics, by which a semiconductor device can be designed with high reliability, and the method are provided. When a gate voltage of a negative level (a negative bias voltage) “Vg” is applied to a gate of the transistor, characteristics of the transistor are deteriorated. When application of the negative level gate voltage “Vg” is terminated (when applying a bias free voltage), the deteriorated transistor characteristics are recovered. In a deterioration period and a recovery period, a logarithm “log(t)” is obtained for an application time “t” of the gate voltage, a deterioration amount ΔP_D(t)=C_D+B_D·log(t) is calculated by using constants C_D and B_D depending on the negative bias voltage, a recovery amount ΔP_R(t)=C_R+B_R·log(t) is calculated by using constants C_R and B_R depending on the bias free voltage, and the deterioration amount (ΔP_D), the recovery amount (ΔP_R) and a basic deterioration amount (X_D) are summed up. Preferably, passage of time is divided, and a deterioration amount and a recovery amount are obtained for each time zone by using different deterioration and recovery functions for each time zone.

A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage characteristics in which a positive bias current flowing when a positive voltage is applied from one electrode as a reference electrode to the other electrode through an incorporated rectifier junction is larger than a negative bias current, a memory cell selection circuit for selecting the memory cell from the memory cell array, a voltage supply circuit for supplying a voltage to the memory cell so that a predetermined positive voltage corresponding to the reading operation is applied to the other electrode of the variable resistance element, in the reading operation, and a readout circuit for detecting the amount of the positive bias current and reading the information stored in the selected memory cell, in order to suppress the reading disturbance of the memory cell.

This invention relates to a CrN/CrAlN anti-hot corrosion protection coating in a wide temperature sphere and its preparation method, which applies a mode of DC reaction cosputter to Cr and Al targets to get a CrN/CrAlN coating, in which, the chip temperature is room temperature-300deg.C, Ar and N2 are controlled by mass flowmeter, the flow is 6-20SCCM and 6-20SCCM, the working air pressure is 0.1-0.8Pa, Al content in the coating is controlled by adjusting the power ratio of Cr and Al targets, and 0-150V base negative bias voltage is applied on the base to increase the binding force between the coating and the base, the inner layer of the coating is CrN, the outer is Cr-Al-N with grads distributed Al, and the coating forms a Cr2O3 film with solid solution Al after being oxidized in 800-900deg.C and forms Al oxidation film with rich Al over 1000deg.C and the CrN/CrAlN coating is very good at anti-hot corrosion from hot corrosion experiment.

The invention discloses a preparation method of a multilayer diamond-like film with high hardness, which comprises the following steps: a substrate is sputter cleaned, the diamond-like film is deposited by a depositing method with magnetic filtering and cathode vacuum arc, and the depositing method comprises steps of closing a vacuum chamber, vacuumizing the vacuum chamber to the pressure of 10<-3> Pa, turning on a pot lead cathode arc source, exerting negative bias voltage from minus 50 V to minus 200 V on the substrate and simultaneously and periodically letting in argon of 99.99 percent; furthermore, a control period lasts for 120 to 600 seconds, the time for letting in the argon is 10 to 50 percent of the control period, and the argon pressure in the vacuum chamber during argon inletting is 0.01 to 0.1 Pa; time for shutting off the argon is 90 to 50 percent of the control period, and the vacuum degree of the vacuum chamber at the time is 10<-4> to 10<-3> Pa; the number of the control periods is 3 to 50. The preparation method of the multilayer diamond-like film with high hardness has simple technique, low cost, produced films with strong bonding force, high hardness, large thickness, small stress and excellent mechanical and tribology performance; as well as wide application space in the industrial application field.

The invention discloses a manufacturing method for a CVD (Chemical Vapor Deposition) diamond/diamond-like composite coating tool with a complex shape. The manufacturing method comprises the steps as follows: depositing a layer of MCD (Micro Crystalline Diamond) film on the surface of the tool by a hot wire CVD method, and generating ion bombardment by negative bias in the depositing process so as to ensure that the surface of the MCD film is smooth; and continuously depositing a layer of DLC (Diamond-like Carbon) film, carrying out ion bombardment on the tool surface coated with the MCD film by positive and negative pulse ion power so as to remove impurities on the tool surface in the initial period, and removing the sharp crystalline grain edge of the coating surface to enhance the flatness of the coating and improve the surface activity of the coating so as to achieve the effect of enhancing the interlayer adhesion strength. Due to the manufacturing method, the surface of the integrated hard alloy tool with the complex shape can be deposited to obtain the CVD diamond/diamond-like composite coating with excellent film-based adhesion strength, surface wear and friction resistance and self lubricating property, and the composite coating also has the characteristics of low internal stress, smooth and flat surface, uniform thickness and the like.

The invention relates to device and method for depositing an ultrathin alumina film by an atomic layer. Plasma is generated by combining double frequency which is microwave ECR with radio frequency negative bias voltage equipment and used for depositing the alumina film. By using the microwave ECR and the radio frequency negative bias voltage system, the work gas generates the plasma; and by using trimethyl aluminum (TMA) as a monomer and the mode of TMA-Ar-O2-Ar alternate pulse, the alumina film is deposited by using the atomic layer, wherein the deposition temperature is room temperature. By adopting the generating mode of using the plasma as an active group, the deposition can be carried out in a lower ambient temperature, the growth speed is higher compared with the deposition by a hot atomic layer and is about 0.12nm/period and the quality of the prepared film is higher compared with the deposition by the hot atomic layer. The prepared Al2O3 film can be widely applied to the fields of microelectronic devices, electroluminescent devices, wave optical devices, corrosion-resistant coatings and the like.

A driving circuit for a half bridge utilizing bidirectional semiconductor switches in accordance with an embodiment of the present application includes a high side driver operable to control a high side bidirectional semiconductor switch, wherein the high side driver provides a negative bias voltage to the bidirectional semiconductor switch to turn the high side bidirectional semiconductor switch OFF. A low side driver may be operable to control a low side bidirectional semiconductor switch. An external voltage source with a negative terminal of the voltage source connected to the high side driver may be provided. A high side driving switch may be positioned between the negative terminal of the voltage source and the high side driver and operable to connect the high side driver to the negative terminal of the voltage source when the low side driver turns the low side bidirectional semiconductor switch ON.