Device and method for depositing ultrathin alumina film by atomic layer

An atomic layer deposition, alumina technology, applied in coating, gaseous chemical plating, metal material coating process and other directions, can solve the problems of complex surface chemical reactions, few reports, and no substantial breakthroughs, etc. To achieve the effect of solving high temperature heating

Inactive Publication Date: 2010-12-22
BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the mid-to-late 1980s, the use of ALD technology to grow II-VI and III-V single crystal compounds and to prepare ordered heterogeneous superlattices has received extensive attention, but due to the complexity of surface chemical reactions, there has been no research in this field. made a substantial breakthrough
[0013] At present, the application of microwave ECR plasma technology in China is very mature and common. Among them, the most widely used technology is the State Key Laboratory of Surface Modification of Three-beam Materials of Dalian University of Technology. Their researchers used this technology to carry out nitriding The preparation of gallium thin films, the low-temperature growth of aluminum nitride single crystal thin films and the synthesis of diamond-like thin films, etc.; Xu Min from Fudan University and others used ALD technology to study the atomic layer growth of aluminum oxide thin films, and for the application of microwave ECR plasma There are few reports on the atomic layer growth of aluminum oxide thin film

Method used

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  • Device and method for depositing ultrathin alumina film by atomic layer
  • Device and method for depositing ultrathin alumina film by atomic layer
  • Device and method for depositing ultrathin alumina film by atomic layer

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specific Embodiment approach

[0023] 1. First, pump the vacuum chamber 34 to the background pressure, which is about 0.001 Pa; then turn the first mass flow controller 14 to clean and vacuum the discharge argon pipeline 11 to 0.001 Pa, and then close the first mass flow controller 14. A mass controller 14; open the first pneumatic valve 18, beat the second mass flow controller 15 to clean, carry out the vacuum pumping of the pipeline 12 to 0.001 Pa, then close the second mass flow controller 15 and the first Pneumatic valve 18; open the second pneumatic valve 19, turn on the third mass flow controller 16 for cleaning, perform pumping of the pipeline 13, close the third mass flow controller 16 and the second pneumatic valve 19 after pumping to 0.001 Pa Open the 3rd pneumatic valve (20), the 4th pneumatic valve 21, the 5th pneumatic valve 22, the 6th pneumatic valve 23, the 7th pneumatic valve 25, the 8th pneumatic valve 30 successively, and the 4th mass flow controller 17 After cleaning, pump the pipeline t...

example 1

[0033] 1. First, pump the vacuum chamber 34 to the background pressure, which is about 0.001 Pa; then turn the first mass flow controller 14 to clean and vacuum the discharge argon pipeline 11 to 0.001 Pa, and then close the first mass flow controller 14. A mass controller 14; open the first pneumatic valve 18, beat the second mass flow controller 15 to clean, carry out the vacuum pumping of the pipeline 12 to 0.001 Pa, then close the second mass flow controller 15 and the first Pneumatic valve 18; open the second pneumatic valve 19, turn on the third mass flow controller 16 for cleaning, perform pumping of the pipeline 13, close the third mass flow controller 16 and the second pneumatic valve 19 after pumping to 0.001 Pa Open the 3rd pneumatic valve 20, the 4th pneumatic valve 21, the 5th pneumatic valve 22, the 6th pneumatic valve 23, the 7th pneumatic valve 25, the 8th pneumatic valve 30 successively, and the 4th mass flow controller 17 is beaten to Clean, pump the pipeline...

example 2

[0044]1. First, pump the vacuum chamber 34 to the background pressure, which is about 0.001 Pa; then turn the first mass flow controller 14 to clean and vacuum the discharge argon pipeline 11 to 0.001 Pa, and then close the first mass flow controller 14. A mass controller 14; open the first pneumatic valve 18, beat the second mass flow controller 15 to clean, carry out the vacuum pumping of the pipeline 12 to 0.001 Pa, then close the second mass flow controller 15 and the first Pneumatic valve 18; open the second pneumatic valve 19, turn on the third mass flow controller 16 for cleaning, perform pumping of the pipeline 13, close the third mass flow controller 16 and the second pneumatic valve 19 after pumping to 0.001 Pa Open the 3rd pneumatic valve 20, the 4th pneumatic valve 21, the 5th pneumatic valve 22, the 6th pneumatic valve 23, the 7th pneumatic valve 25, the 8th pneumatic valve 30 successively, and the 4th mass flow controller 17 is beaten to Clean, pump the pipeline ...

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Abstract

The invention relates to device and method for depositing an ultrathin alumina film by an atomic layer. Plasma is generated by combining double frequency which is microwave ECR with radio frequency negative bias voltage equipment and used for depositing the alumina film. By using the microwave ECR and the radio frequency negative bias voltage system, the work gas generates the plasma; and by using trimethyl aluminum (TMA) as a monomer and the mode of TMA-Ar-O2-Ar alternate pulse, the alumina film is deposited by using the atomic layer, wherein the deposition temperature is room temperature. By adopting the generating mode of using the plasma as an active group, the deposition can be carried out in a lower ambient temperature, the growth speed is higher compared with the deposition by a hot atomic layer and is about 0.12nm/period and the quality of the prepared film is higher compared with the deposition by the hot atomic layer. The prepared Al2O3 film can be widely applied to the fields of microelectronic devices, electroluminescent devices, wave optical devices, corrosion-resistant coatings and the like.

Description

Technical field: [0001] The invention relates to a new method for depositing an ultra-thin aluminum oxide film by atomic layer, in particular using dual-frequency microwave ECR and radio frequency negative bias equipment to generate plasma to deposit aluminum oxide film. Background technique: [0002] Aluminum oxide (Al 2 o 3 ) film has many excellent physical and chemical properties, such as: high dielectric constant, high thermal conductivity, strong resistance to radiation damage, strong resistance to alkali ion penetration and transparency in a wide range of wavelengths. Therefore, Al 2 o 3 Thin films are widely used in many fields such as microelectronic devices, electroluminescent devices, optical waveguide devices, and anti-corrosion coatings. Especially in microelectronic devices, Al 2 o 3 Due to the advantages of large dielectric constant and large energy band shift in contact with Si, thin film is the best choice to replace SiO 2 One of the competitive mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/505
Inventor 陈强桑利军李兴存
Owner BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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