The invention discloses an ion film-plating device and an ion film-plating method. In the ion film-plating device, a magnetic-control target is designed into a cylinder shape, all sputtering is completed inside the cylindrical target source, a bias power supply is adopted to lead out an ion beam flow to be deposited on a workpiece, therefore, ions which are electrically neutral or are not ionized cannot be attracted out by an electric field, and thus ion deposition can achieve 100%. In addition, as sputtering of the magnetic-control sputtering target source is carried out in the cylinder, even through arcing is generated, generation is carried out just inside the cylinder, and the film plated workpiece cannot be affected, and the arcing is avoided from affecting film plating. Furthermore, the target source ions are led out of the cylinder by the bias power supply, target voltage attraction on the ions after leading out is weakened, and at the same time, the area of the led-out beam flow is far smaller than the target surface area, so that the led-out beam flow density is greatly improved, and the deposition rate is effectively improved.