34 results about "Ion deposition" patented technology

The invention belongs to the field of light modulators, and provides an electrochromic device based on reversible double electrodeposition and application of the electrochromic device. The electrochromic device sequentially comprises a first transparent substrate, a first conductive layer, an electrolyte layer, a second conductive layer and a second transparent substrate; the electrolyte layer comprises a solvent and an electrolyte additive, and the electrolyte additive comprises a manganese salt, a zinc salt and a redox medium. And the charge change in the manganese ion deposition / dissolution process is compensated through the reversible deposition / dissolution reaction of zinc ions in the electrolyte. In the coloring process, manganese ions are subjected to oxidation reaction on the surface of the first transparent conductive substrate to form manganese dioxide sediment; meanwhile, the zinc ions are subjected to reduction reaction on the surface of the second transparent conductive substrate to form metal zinc. And in the fading process, the sediment is dissolved, so that the device is recovered to the initial transparent state. In addition, dissolution of manganese dioxide and metal zinc can be accelerated by adding the oxidation-reduction medium, and the reaction kinetics of the device is improved.

The invention relates to a photocatalytic fuel cell based on a cadmium sulfide titanium dioxide composite photo-anode and application, and relates to the technical field of preparation of novel photo-electrode materials, the cell adopts a continuous ion deposition method to prepare a CdS quantum dot modified TiO2 photo-anode with a specific layer number, and the CdS quantum dot modified TiO2 photo-anode, a platinum cathode and an ion exchange membrane form a synergistic system. The layer number and the particle size of CdS quantum dots in the photo-anode are accurately controlled, an efficient heterojunction structure is constructed, and the visible light utilization and charge separation efficiency is improved to the maximum extent; a chemical bonding effect is formed on the surface of the photo-anode by using carboxyl-containing organic fuel, so that an electron transmission path is obviously accelerated; the dual functions of organic wastewater degradation and electric energy synchronous output are achieved, and long-term operation stability is kept. The technology provides an efficient and low-consumption solution for resourceful treatment of industrial organic wastewater.

The invention provides an ion measurement device with high-resolution mass spectrum detection and charge state measurement functions, and the device comprises a deflection system which is used for introducing solar wind ions into a geometric factor control system; the geometric factor control system is used for introducing the solar wind ions into the hemispherical electrostatic analyzer and adjusting the flux measurement range by adjusting the voltage; the electrostatic analyzer is used for performing energy analysis on the solar wind ions through voltage; the flight time system is used for recording an initial charge signal and a termination charge signal of ion flight and measuring ion deposition energy; the pre-amplification system multiplies and amplifies weak signals of ions and electrons, identifies and processes the signals and outputs digital signals; and the electronic processing unit is used for processing a signal output by the pre-amplification system, obtaining information of components, charge states, directions, energy and flux of solar wind ions, and providing multiple paths of high voltage required by the device. The device has the advantage that mass spectrum detection and charge state measurement are simultaneously realized on one device.

The invention discloses a preparation method of a low-temperature plasma plating and permeating modified layer on the surface of a metal mold. The preparation method comprises the following steps: S1, precise pretreatment of a base body: sequentially carrying out mechanical grinding and polishing and ultrasonic cleaning on the base body, and then drying and putting the base body in a vacuum chamber; s2, plasma activation: after vacuumizing, introducing mixed gas of argon and hydrogen, generating glow discharge under the action of a pulse power supply, and performing sputtering activation on the surface of the substrate; s3, gradient transition layer plasma deposition is conducted, specifically, a pulse direct-current plasma source is adopted, a Ti target and a Cr target serve as sputtering sources, and a transition layer with components changing in a gradient mode is prepared; s4, plating and permeating a multi-element synergistic functional layer: preparing the functional layer by adopting a radio frequency-pulse direct-current composite plasma source, namely a Ti target, a Cr target, a Si-Al alloy target and a rare earth element target through synergistic sputtering; and S5, post-treatment optimization: performing vacuum cooling to room temperature after low-temperature annealing treatment to obtain a final modified layer. The permeation modified layer prepared by the method has high binding force, high hardness, high wear resistance and salt spray corrosion resistance.

The invention discloses a high-beam ion soft landing device based on a multistage difference technology, and belongs to the technical field of surface scientific sample preparation. The device comprises an electrospray ionization source, an ion transmission device, an ion deposition device and a sample transfer device which are connected in sequence. The ionization source couples high voltage to the solution through the spray needle fixing mechanism integrating the three-dimensional displacement table and the metal conductive connecting piece, and electrified micro-droplets are generated. The transmission device adopts a combination of a four-stage differential air exhaust cavity and a replaceable ion lens with a gradually increased aperture, so that efficient focusing and transmission of ions are realized, and desolvation is completed through a heating capillary tube. The deposition device drives a multi-clamping-groove vertical sample frame through a magnetic coupling sample transfer rod, and applies a deceleration electric field to a sample support by using an external bias power supply, so that ions are softly landed on a substrate with low kinetic energy. According to the invention, an expensive mass spectrum assembly is abandoned, and through linkage of all parts, high-flux and high-integrity clean deposition of macromolecules and heat-sensitive samples is realized while the cost is remarkably reduced.

The embodiment of the invention discloses a preparation method of a metal bipolar plate coating and a metal bipolar plate. The method comprises the following steps: providing the metal bipolar plate; performing magnetron sputtering ion deposition on the metal bipolar plate to obtain a metal bipolar plate with a magnetron sputtering ion deposition layer; sequentially carrying out magnetron sputtering ion deposition and arc ion deposition on the metal bipolar plate with the magnetron sputtering ion deposition layer to obtain a metal bipolar plate with an intermediate layer; and performing arc ion deposition on the metal bipolar plate with the intermediate layer to obtain the metal bipolar plate with the coating structure. According to the preparation method of the metal bipolar plate coating, through the coating preparation method combining the magnetron sputtering deposition process and the arc deposition process, interface matching between the coatings is guaranteed, the overall structure of the coating is optimized, so that the prepared coating has high compactness and uniformity, and the service life of the metal bipolar plate is prolonged.

The application discloses a high-ionic-conductivity diaphragm and a preparation method thereof. The diaphragm is prepared by using an ultrahigh molecular weight polyethylene as a matrix and a covalent organic framework material as a functional filler through a thermal phase separation method. The introduction of the COF material significantly improves the ionic conductivity, thermal dimensional stability and mechanical strength of the diaphragm, and the diaphragm can be endowed with the characteristics of adsorbing polysulfides and guiding uniform ion deposition through COF channel functionalization. The preparation method is mature in process and easy to scale up production, and the prepared diaphragm is suitable for next-generation high-energy-density and high-safety electrochemical energy storage devices with high performance requirements.

The present application belongs to the technical field of powder material testing and analysis method, and discloses a testing method for testing the carrier separation efficiency of photocatalyst powder particles under fixed light excitation. The method uses silver nitrate, chloroplatinic acid and other reagents which are easily reduced by photo-generated electrons as hole sacrificial reagents to react with photo-generated electrons separated to the surface; uses methanol, formic acid, ethanol, triethanolamine, H2O2 and other small molecules which are easily oxidized by holes as electron sacrificial reagents to react with photo-generated holes separated to the surface; under a single-wavelength calibration light source, irradiation is carried out for a fixed length of time of photocatalytic reaction, the total amount of photo-generated electrons participating in the surface metal deposition reaction is quantitatively separated and determined by measuring the deposition amount of Ag or Pt particles deposited on the photocatalytic particles, and the charge separation efficiency value of the photocatalyst powder material is calculated by assuming that the noble metal ion deposition reaction efficiency is 100%.

Provided is a plasma processing method for a mask pattern that includes an inorganic resist, the plasma processing method making it possible to achieve a low roughness while suppressing thinning of the mask pattern. According to the present invention, a plasma processing method for reducing the roughness of a mask pattern that includes an EUV-exposed tin oxide inorganic resist includes a step for selectively etching protrusions at a side wall of the inorganic resist in the film thickness direction of the inorganic resist using plasma generated using pulse-modulated high-frequency power and BCl3 gas. The duration of the plasma processing and the duty ratio of the pulse modulation are determined on the basis of the roughness as acquired in advance and the correlation between the duration of the plasma processing and the duty ratio of the pulse modulation. The off duration of the pulse is set to the duration that an upper surface of the inorganic resist is to be selectively irradiated with depositable radicals with respect to ions.

Apparatus and methods are described for preparing samples for examination by cryo-electron microscopy. Molecules of interest, such as protein molecules in a solution, are electrosprayed and converted to singly-charged gas-phase ions. Particular conformation(s) of the protein ions are selected by means of an ion mobility filter and deposited onto a cryo-EM grid at sub-eV kinetic energy for the purpose of preserving the molecule's higher order structure.

The utility model discloses a bias voltage sample table adopting microwave plasma deposition, and belongs to the technical field of diamond preparation. Comprising a microwave plasma chemical vapor deposition equipment reaction chamber, a water-cooling deposition table, a bias electrode lifting table, a quartz cylinder and a tungsten annular bias electrode, and a bias sample table is arranged at the bottom of the microwave plasma chemical vapor deposition equipment reaction chamber; and a quartz microwave window is arranged at the top of the reaction chamber of the microwave plasma chemical vapor deposition equipment. According to the utility model, the bias electrode for directly applying bias voltage to the plasma and the water-cooling deposition table are integrated, and the high and low positions of the bias electrode and the water-cooling deposition table can be independently adjusted, so that the most suitable real-time relative positions of the electrode, the sample table and the plasma can be easily found, and the stable, uniform and efficient bias voltage enhanced nucleation process is realized; and uniform nucleation and growth of the diamond on the deposition substrate are facilitated.

A deposition system has an ion deposition apparatus configured to direct a deposition species toward a workpiece along a path. The workpiece has one or more features having a gap defined by the one or more features. A workpiece support holds the workpiece to receive the deposition species at a predetermined tilt angle with respect to the path. The ion deposition apparatus deposits the deposition species on the one or more features, the workpiece support rotates the workpiece with respect to the path, growing a deposition film of the deposition species on the one or more features in a predetermined manner. The deposition film can seal the gap to define a sealed cavity. Alternatively, the one or more features can be a mask that is augmented by the deposition film to increase one or more dimensions of the mask.

This invention relates to a photothermal-driven ion separation device, its preparation method, and its application. The device includes a porous substrate with a photothermal layer disposed on a first surface of the substrate. The photothermal layer absorbs light and generates heat. An ion separation membrane is disposed on a second surface of the porous substrate, selectively allowing ions from a solution to permeate. The pore structure within the porous substrate connects the first and second surfaces. In use, the ion separation membrane is in contact with the solution. Capillary force generated by a water transport channel drives water and permeable ions in the solution through the ion separation membrane to the pore structure of the porous substrate. Water evaporates in the photothermal layer, and ions are deposited within the pore structure of the porous substrate. It can be used to separate ions with different charges in a solution, such as lithium ions and magnesium ions.

Sleeves that can be disposed on either end of a bushing to improve the wear characteristics and usable lifetime of the bushing is disclosed. During the use of the bushing, such as when a machine including the bushing is operated, the sleeves may be in primary contact with abrasive elements (e.g., other parts of the machine, dirt, rock, etc.) and wear, while the underlying bushing is protected, at least in part, from wear and tear. The sleeves may include a bulk material, such as steel, with a hard coating thereon, such as hard chromium, tungsten carbide, or the like. The hard coating may be formed by any variety of processes, such as electroplating, plasma deposition, thermal deposition, or the like. In some cases, the sleeves, after being worn from use, may be replaced or refurbished to further extend the lifetime of the bushing.

A plasma deposition apparatus includes a vacuum chamber, and a workpiece assembly that includes a frame that can hold a plurality of workpieces, and gas channels formed in between the workpieces and the frames. The gas channels can transport gas from a gas source to the plurality of workpieces to produce material deposition on the workpieces. The workpiece assembly can form a cylinder in the vacuum chamber.

The application belongs to the technical field of mass spectrometers, in particular to an ion soft landing device for a soft landing preparation mass spectrometer, wherein an ion funnel, a grid and a deposition target are arranged in an ion deposition cavity in sequence from left to right along an X direction, the ion funnel comprises eight or more ion transmission electrodes, each ion transmission electrode is a flat plate structure with a through hole in the middle, the ion transmission electrode closest to the grid is a small hole electrode, and the through holes on each ion transmission electrode form an ion transmission cavity in the shape of a horizontally coaxial funnel; ions entering the ion deposition cavity pass through the ion transmission cavity and can only reach the grid through the through hole on the small hole electrode, and the ions decelerated by the grid are deposited on the deposition target. The soft landing part of the soft landing preparation mass spectrometer is reasonably designed, so as to achieve the purposes of large ion flow, efficient ion transmission and guaranteeing the integrity of ion structure.

The utility model belongs to the technical field of plasma deposition, and discloses an auxiliary device utilizing a microwave deposition plasma source, which comprises a vacuum furnace body and an auxiliary plasma source, the inner cavity of the vacuum furnace body is cylindrical, a rotating stand for placing a workpiece is arranged in the vacuum furnace body, the auxiliary plasma source is connected with the vacuum furnace body, and the rotating stand is connected with the vacuum furnace body. The auxiliary plasma source comprises a waveguide tube, energy of the waveguide tube is injected from the left side, the right side of the waveguide tube is connected with the reflection matching network, quartz glass for isolating the normal-pressure waveguide and the vacuum cavity is arranged above the waveguide tube, and perturbators for adjusting the size of the microwave waveguide are arranged on the inner side of the waveguide tube and the position of a quartz glass window. By arranging the auxiliary plasma source and the perturbator, the scattering proportion and the scattering direction of waveguide energy to the vacuum cavity can be increased, and the uniformity of the whole coating can be ensured by matching with the rotating stand in the vacuum furnace body.

This invention relates to the field of electronic circuit materials technology, and particularly to an electrolyte for preparing high-tensile-strength microporous copper foil, its preparation method, and its application. The electrolyte of this invention comprises 70-100 g / L copper ions, 80-120 g / L sulfuric acid, 20-40 mg / L chloride ions, 10-20 mg / L brightener, 5-15 mg / L wetting agent, and 5-15 mg / L leveling agent. It is prepared by premixing the basic electrolyte with the wetting agent, then sequentially adding the chloride ion source, brightener, and leveling agent, followed by constant-temperature curing. This electrolyte is specifically designed for the electrodeposition preparation of array-type microporous copper foil. The synergistic effect of the three specific additives precisely controls the copper ion deposition behavior in the special current density region at the edge of the micropores, thereby ensuring that the copper foil substrate achieves extremely high mechanical strength while forming a regular microporous structure, solving the technical problem of simultaneously achieving high porosity and high strength.

The utility model relates to the technical field of plasma deposition, in particular to plasma deposition equipment. Plasma deposition equipment is characterized in that a radio frequency power supply access port and a vacuum extraction opening are fixedly connected to the two sides of a vacuum chamber respectively, a raw material gas access port is rotationally connected to the top of the vacuum chamber, a driving mechanism is arranged at the top of the raw material gas access port, and a gas distribution disc is fixedly connected to the bottom end of the raw material gas access port; a plurality of exhaust holes are evenly formed in the bottom face of the gas distribution disc, a plurality of baking lamps are arranged in the middle of the inner wall of the vacuum chamber in a surrounding mode, an opening is formed in the front side of the vacuum chamber, a sealing plate is arranged on the opening in a matched mode, and a containing plate is arranged in the vacuum chamber. According to the utility model, the gas distribution disc is arranged and can rotate at a constant speed under the action of the driving mechanism, so that raw material gas can be uniformly distributed in the vacuum chamber and can be uniformly deposited on a base material after being converted into plasma under the action of the radio frequency power supply.

The present application relates to a kind of in porous material vacuum plating process, in particular, the process of vacuum plating on the surface of 3D printing porous material, etching material, comprising: S1, to the porous material material is carried out electron beam enhanced plasma cleaning, adopts argon ion bombardment porous material material surface;S2, to the porous material material surface treated in S1 is carried out secondary sputtering metal ion deposition, and charged metal ion generated by ionization source is periodically sputtered-anti-sputtering coating;S3, in the porous material material surface treated in S2 carries out metal deposition.The process can obtain the biocompatibility metal film layer of stronger coating on medical porous material, and the deposited coating can keep material porous structure, improve covering capacity, for porous metal material or porous metal powder printing material can greatly reduce the ion precipitation of matrix component, with excellent use prospect.

The invention discloses a homologous metal organic framework-MXene heterojunction material as well as a preparation method and application thereof. The preparation method comprises the following steps: carrying out solvothermal reaction on a mixed reaction system containing an MXene material, a ligand capable of generating a heterojunction structure with the MXene material, and an organic solvent to prepare the homologous metal organic framework-MXene heterojunction material. Metal ions in MXene are used as a metal center for MOF growth, a homologous MOF-MXene heterojunction structure is constructed, regulation and control of a metal negative electrode solvation structure can be realized through a rich pore structure and a unique functional group of the homologous MOF-MXene heterojunction structure, redistribution of a large amount of charges can occur on a heterogeneous interface of the structure, a built-in electric field is generated, and the MOF-MXene heterojunction structure is formed. Charge transfer is facilitated, ion deposition regulation and control of the metal negative electrode can be realized, and the metal negative electrode without metal dendrites is realized.

The utility model discloses an anode box and an electroplating device, which comprise a box body, at least two groups of anode titanium meshes which are not connected are arranged in the box body, so that adjacent electroplating areas are formed at the bottom of the box body corresponding to each group of anode titanium meshes; the top of each anode titanium mesh is provided with a group of wiring blocks, and the wiring blocks are used for supplying power to the anode titanium meshes; the spray head assembly is arranged right above the anode titanium mesh of the box body, and the spray head assembly at least comprises a water inlet pipe and a spray head arranged at the bottom of the water inlet pipe; the utility model can solve the problems that the anode titanium mesh of the traditional anode box is an integral body, so that the current is not uniformly distributed on the surface of the anode, the deposition uniformity of copper ions on the surface of a PCB (Printed Circuit Board) is influenced, and the product quality and performance are influenced.

The present application relates to the technical field of X-ray detection, and particularly relates to a gradient perovskite heterojunction and a preparation method and application thereof. The present application provides a preparation method of a gradient perovskite heterojunction, comprising the following steps: using an electric field driven ion deposition method, under the condition of applying a reverse bias electric field, ITO glass and ITO glass fixed with a perovskite single crystal are relatively arranged in an AX ethanol solution to perform first crystallization, a perovskite gradient layer is obtained, then the reverse bias electric field is switched to a forward bias electric field to perform second crystallization, and the gradient perovskite heterojunction is obtained; A in AX is an organic cation or an inorganic cation, and X in AX is a halide anion. The preparation method can prepare a gradient perovskite heterojunction for constructing a compact integration, and has the advantages of rapidness, strong universality and high adhesion.

The application discloses a simulation method for tokamak neutral beam injection and fast ion deposition. In the numerical simulation of the neutral beam particle injection and ionization process in a tokamak device, the physical parameters of the neutral beam injection device are determined first, then the injection source is simplified by using a narrow particle beam model, the neutral beam particle density of a reference point given under geometric conditions is calculated, the average free path of the neutral beam particle ionization is calculated after the parameters of the position of the reference point in the plasma interior are obtained, the ions in different regions are divided by using a non-uniform grid and are given different weights, and finally the simulation process of the neutral beam injection is realized. The application realizes the simulation of the injection process of the neutral beam particles by using the narrow particle beam model, can obtain the neutral particle and fast ion distribution at any position in the plasma, has high calculation efficiency and strong numerical stability, and is a stable and efficient numerical simulation method.

The embodiment of the invention provides an auxiliary film forming device and a film forming system. The auxiliary film forming device comprises a vacuum cavity and an auxiliary film forming structure, the surface of the vacuum cavity comprises a first surface, a second surface and a side surface; the auxiliary film forming structure comprises: a first plasma source assembly located on the side surface; the first plasma source assembly comprises a first electrode component and a first connecting part, and the first electrode component comprises a first polar plate and a first electrode; the first polar plate comprises a bombardment side and a non-bombardment side, the first connecting part is located on one side of the non-bombardment side, and the first electrode is located between the first connecting part and the first polar plate; the gas path assembly is used for providing gas to the bombardment side of the first plasma source assembly and transmitting at least part of ions formed by gas discharge to the substrate. The first plasma source assembly is arranged, and the first electrode component arranged in the first plasma source assembly can improve the uniformity of the auxiliary film forming device in the process of carrying out partial ion deposition on the substrate.

The application discloses a tellurium electrolytic purification device and relates to the technical field of electrolytic purification equipment. The device comprises an electrolytic tank main body, a circulating tank and a high tank. The circulating tank is internally provided with a first chamber, a second chamber and a third chamber which are interconnected and have gradually increased filtering precision. The circulating tank further comprises a detection assembly and a cleaning assembly. The device uses the blocking condition of the filter screen as a feedback signal of the current electrolyte quality, converts invisible electrolyte impurity load into visible liquid level rising slope, and enables the system to judge the state of the current electrolyte through simple mechanical structure. Meanwhile, different cleaning and protection strategies are matched according to the state of different electrolytes, the stability of ion deposition on the cathode surface is maximally maintained, and the crystallization quality and batch consistency of high-purity tellurium products are improved.

The utility model relates to the technical field of cooling equipment for deposition coating, in particular to a cooling mechanism for stainless steel ion deposition coating. According to the technical scheme, the device comprises a bearing plate and a cooling liquid storage tank, the bearing plate is used for fixing a coating piece in the deposition coating machine, a temperature sensor is fixed to the side wall of the bearing plate, a protective cover is fixed to the periphery of the temperature sensor, a water-cooling circulating groove is formed in the bearing plate, and connectors are fixed to openings in the two ends of the water-cooling circulating groove; the connector is connected with the cooling liquid storage tank through a circulating pipe, a circulating pump is installed on the water inlet side of the circulating pipe, a radiator is installed on the water outlet side of the circulating pipe, and a leakage collecting assembly is arranged on the bearing plate and located below the connector. The bearing plate is cooled through air cooling and water cooling, the fan is driven to rotate through liquid water flow, more energy is saved, meanwhile, a leakage collecting structure is arranged at the position of the cooling liquid connector, and cooling liquid is prevented from overflowing and entering the coating equipment.

A deposition system has an ion deposition apparatus configured to direct a deposition species toward a workpiece along a path. The workpiece has one or more features having a gap defined by the one or more features. A workpiece support holds the workpiece to receive the deposition species at a predetermined tilt angle with respect to the path. The ion deposition apparatus deposits the deposition species on the one or more features, the workpiece support rotates the workpiece with respect to the path, growing a deposition film of the deposition species on the one or more features in a predetermined manner. The deposition film can seal the gap to define a sealed cavity. Alternatively, the one or more features can be a mask that is augmented by the deposition film to increase one or more dimensions of the mask.

The application provides a preparation method of a P-type amorphous silicon thin film of a heterojunction cell, a thin film and application, relates to the technical field of solar cell preparation, and comprises the following steps: placing a silicon wafer on a carrier plate and entering a film plating cavity, wherein the film plating cavity forms a channel from an inlet to an outlet; control parameters of the film plating cavity are set, and a gas pump arranged at one end of the film plating cavity is enabled to form a certain directional gas flow in the film plating cavity; the carrier plate moves on the channel of the film plating cavity, and special gas with different input parameters is introduced into multiple positions of the film plating cavity, wherein the special gas comprises borane, hydrogen and silane, and the input parameters comprise the ratio, content and power of the borane, hydrogen and silane; under the directional gas flow, the silicon wafer is enabled to form a continuously gradient-doped P-type amorphous silicon thin film through ion deposition during movement from the inlet to the outlet of the film plating cavity, so that the problem of complicated film preparation operation and high cost in the prior art is solved.

The utility model provides a target material, relates to the field of high-vacuum magnetron sputtering micro-nano film manufacturing, and aims to improve the uniformity of film preparation. The target material comprises a target surface; the target surface comprises a concave part which surrounds the center of the target material, and the first section of the concave part is arc-shaped. The first section is obtained by cutting off the concave part in the radial direction of the target material. According to the target material provided by the invention, the concave part is formed in the region with the high magnetic field intensity of the target surface, and the target material ions bombarded by ions in the target surface region with the low magnetic field intensity are less; the area with the large magnetic field intensity should be bombarded by the ions to form more target ions, but as the concave part is formed in the area with the large magnetic field intensity on the target surface, some bombarded target ions are deposited on the inner side wall of the concave part, so that balance is realized, and the purpose of uniform deposition of the thin film is achieved.