4 results about "Ion deposition" patented technology

This invention relates to the field of electronic circuit materials technology, and particularly to an electrolyte for preparing high-tensile-strength microporous copper foil, its preparation method, and its application. The electrolyte of this invention comprises 70-100 g / L copper ions, 80-120 g / L sulfuric acid, 20-40 mg / L chloride ions, 10-20 mg / L brightener, 5-15 mg / L wetting agent, and 5-15 mg / L leveling agent. It is prepared by premixing the basic electrolyte with the wetting agent, then sequentially adding the chloride ion source, brightener, and leveling agent, followed by constant-temperature curing. This electrolyte is specifically designed for the electrodeposition preparation of array-type microporous copper foil. The synergistic effect of the three specific additives precisely controls the copper ion deposition behavior in the special current density region at the edge of the micropores, thereby ensuring that the copper foil substrate achieves extremely high mechanical strength while forming a regular microporous structure, solving the technical problem of simultaneously achieving high porosity and high strength.

The application provides a preparation method of a P-type amorphous silicon thin film of a heterojunction cell, a thin film and application, relates to the technical field of solar cell preparation, and comprises the following steps: placing a silicon wafer on a carrier plate and entering a film plating cavity, wherein the film plating cavity forms a channel from an inlet to an outlet; control parameters of the film plating cavity are set, and a gas pump arranged at one end of the film plating cavity is enabled to form a certain directional gas flow in the film plating cavity; the carrier plate moves on the channel of the film plating cavity, and special gas with different input parameters is introduced into multiple positions of the film plating cavity, wherein the special gas comprises borane, hydrogen and silane, and the input parameters comprise the ratio, content and power of the borane, hydrogen and silane; under the directional gas flow, the silicon wafer is enabled to form a continuously gradient-doped P-type amorphous silicon thin film through ion deposition during movement from the inlet to the outlet of the film plating cavity, so that the problem of complicated film preparation operation and high cost in the prior art is solved.

A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.