16 results about "Ion deposition" patented technology

The invention provides an ion measurement device with high-resolution mass spectrum detection and charge state measurement functions, and the device comprises a deflection system which is used for introducing solar wind ions into a geometric factor control system; the geometric factor control system is used for introducing the solar wind ions into the hemispherical electrostatic analyzer and adjusting the flux measurement range by adjusting the voltage; the electrostatic analyzer is used for performing energy analysis on the solar wind ions through voltage; the flight time system is used for recording an initial charge signal and a termination charge signal of ion flight and measuring ion deposition energy; the pre-amplification system multiplies and amplifies weak signals of ions and electrons, identifies and processes the signals and outputs digital signals; and the electronic processing unit is used for processing a signal output by the pre-amplification system, obtaining information of components, charge states, directions, energy and flux of solar wind ions, and providing multiple paths of high voltage required by the device. The device has the advantage that mass spectrum detection and charge state measurement are simultaneously realized on one device.

The invention discloses a preparation method of a low-temperature plasma plating and permeating modified layer on the surface of a metal mold. The preparation method comprises the following steps: S1, precise pretreatment of a base body: sequentially carrying out mechanical grinding and polishing and ultrasonic cleaning on the base body, and then drying and putting the base body in a vacuum chamber; s2, plasma activation: after vacuumizing, introducing mixed gas of argon and hydrogen, generating glow discharge under the action of a pulse power supply, and performing sputtering activation on the surface of the substrate; s3, gradient transition layer plasma deposition is conducted, specifically, a pulse direct-current plasma source is adopted, a Ti target and a Cr target serve as sputtering sources, and a transition layer with components changing in a gradient mode is prepared; s4, plating and permeating a multi-element synergistic functional layer: preparing the functional layer by adopting a radio frequency-pulse direct-current composite plasma source, namely a Ti target, a Cr target, a Si-Al alloy target and a rare earth element target through synergistic sputtering; and S5, post-treatment optimization: performing vacuum cooling to room temperature after low-temperature annealing treatment to obtain a final modified layer. The permeation modified layer prepared by the method has high binding force, high hardness, high wear resistance and salt spray corrosion resistance.

The invention discloses a high-beam ion soft landing device based on a multistage difference technology, and belongs to the technical field of surface scientific sample preparation. The device comprises an electrospray ionization source, an ion transmission device, an ion deposition device and a sample transfer device which are connected in sequence. The ionization source couples high voltage to the solution through the spray needle fixing mechanism integrating the three-dimensional displacement table and the metal conductive connecting piece, and electrified micro-droplets are generated. The transmission device adopts a combination of a four-stage differential air exhaust cavity and a replaceable ion lens with a gradually increased aperture, so that efficient focusing and transmission of ions are realized, and desolvation is completed through a heating capillary tube. The deposition device drives a multi-clamping-groove vertical sample frame through a magnetic coupling sample transfer rod, and applies a deceleration electric field to a sample support by using an external bias power supply, so that ions are softly landed on a substrate with low kinetic energy. According to the invention, an expensive mass spectrum assembly is abandoned, and through linkage of all parts, high-flux and high-integrity clean deposition of macromolecules and heat-sensitive samples is realized while the cost is remarkably reduced.

The utility model discloses a bias voltage sample table adopting microwave plasma deposition, and belongs to the technical field of diamond preparation. Comprising a microwave plasma chemical vapor deposition equipment reaction chamber, a water-cooling deposition table, a bias electrode lifting table, a quartz cylinder and a tungsten annular bias electrode, and a bias sample table is arranged at the bottom of the microwave plasma chemical vapor deposition equipment reaction chamber; and a quartz microwave window is arranged at the top of the reaction chamber of the microwave plasma chemical vapor deposition equipment. According to the utility model, the bias electrode for directly applying bias voltage to the plasma and the water-cooling deposition table are integrated, and the high and low positions of the bias electrode and the water-cooling deposition table can be independently adjusted, so that the most suitable real-time relative positions of the electrode, the sample table and the plasma can be easily found, and the stable, uniform and efficient bias voltage enhanced nucleation process is realized; and uniform nucleation and growth of the diamond on the deposition substrate are facilitated.

This invention relates to a photothermal-driven ion separation device, its preparation method, and its application. The device includes a porous substrate with a photothermal layer disposed on a first surface of the substrate. The photothermal layer absorbs light and generates heat. An ion separation membrane is disposed on a second surface of the porous substrate, selectively allowing ions from a solution to permeate. The pore structure within the porous substrate connects the first and second surfaces. In use, the ion separation membrane is in contact with the solution. Capillary force generated by a water transport channel drives water and permeable ions in the solution through the ion separation membrane to the pore structure of the porous substrate. Water evaporates in the photothermal layer, and ions are deposited within the pore structure of the porous substrate. It can be used to separate ions with different charges in a solution, such as lithium ions and magnesium ions.

Sleeves that can be disposed on either end of a bushing to improve the wear characteristics and usable lifetime of the bushing is disclosed. During the use of the bushing, such as when a machine including the bushing is operated, the sleeves may be in primary contact with abrasive elements (e.g., other parts of the machine, dirt, rock, etc.) and wear, while the underlying bushing is protected, at least in part, from wear and tear. The sleeves may include a bulk material, such as steel, with a hard coating thereon, such as hard chromium, tungsten carbide, or the like. The hard coating may be formed by any variety of processes, such as electroplating, plasma deposition, thermal deposition, or the like. In some cases, the sleeves, after being worn from use, may be replaced or refurbished to further extend the lifetime of the bushing.

A plasma deposition apparatus includes a vacuum chamber, and a workpiece assembly that includes a frame that can hold a plurality of workpieces, and gas channels formed in between the workpieces and the frames. The gas channels can transport gas from a gas source to the plurality of workpieces to produce material deposition on the workpieces. The workpiece assembly can form a cylinder in the vacuum chamber.

The utility model belongs to the technical field of plasma deposition, and discloses an auxiliary device utilizing a microwave deposition plasma source, which comprises a vacuum furnace body and an auxiliary plasma source, the inner cavity of the vacuum furnace body is cylindrical, a rotating stand for placing a workpiece is arranged in the vacuum furnace body, the auxiliary plasma source is connected with the vacuum furnace body, and the rotating stand is connected with the vacuum furnace body. The auxiliary plasma source comprises a waveguide tube, energy of the waveguide tube is injected from the left side, the right side of the waveguide tube is connected with the reflection matching network, quartz glass for isolating the normal-pressure waveguide and the vacuum cavity is arranged above the waveguide tube, and perturbators for adjusting the size of the microwave waveguide are arranged on the inner side of the waveguide tube and the position of a quartz glass window. By arranging the auxiliary plasma source and the perturbator, the scattering proportion and the scattering direction of waveguide energy to the vacuum cavity can be increased, and the uniformity of the whole coating can be ensured by matching with the rotating stand in the vacuum furnace body.

This invention relates to the field of electronic circuit materials technology, and particularly to an electrolyte for preparing high-tensile-strength microporous copper foil, its preparation method, and its application. The electrolyte of this invention comprises 70-100 g / L copper ions, 80-120 g / L sulfuric acid, 20-40 mg / L chloride ions, 10-20 mg / L brightener, 5-15 mg / L wetting agent, and 5-15 mg / L leveling agent. It is prepared by premixing the basic electrolyte with the wetting agent, then sequentially adding the chloride ion source, brightener, and leveling agent, followed by constant-temperature curing. This electrolyte is specifically designed for the electrodeposition preparation of array-type microporous copper foil. The synergistic effect of the three specific additives precisely controls the copper ion deposition behavior in the special current density region at the edge of the micropores, thereby ensuring that the copper foil substrate achieves extremely high mechanical strength while forming a regular microporous structure, solving the technical problem of simultaneously achieving high porosity and high strength.

The utility model discloses an anode box and an electroplating device, which comprise a box body, at least two groups of anode titanium meshes which are not connected are arranged in the box body, so that adjacent electroplating areas are formed at the bottom of the box body corresponding to each group of anode titanium meshes; the top of each anode titanium mesh is provided with a group of wiring blocks, and the wiring blocks are used for supplying power to the anode titanium meshes; the spray head assembly is arranged right above the anode titanium mesh of the box body, and the spray head assembly at least comprises a water inlet pipe and a spray head arranged at the bottom of the water inlet pipe; the utility model can solve the problems that the anode titanium mesh of the traditional anode box is an integral body, so that the current is not uniformly distributed on the surface of the anode, the deposition uniformity of copper ions on the surface of a PCB (Printed Circuit Board) is influenced, and the product quality and performance are influenced.

The application discloses a simulation method for tokamak neutral beam injection and fast ion deposition. In the numerical simulation of the neutral beam particle injection and ionization process in a tokamak device, the physical parameters of the neutral beam injection device are determined first, then the injection source is simplified by using a narrow particle beam model, the neutral beam particle density of a reference point given under geometric conditions is calculated, the average free path of the neutral beam particle ionization is calculated after the parameters of the position of the reference point in the plasma interior are obtained, the ions in different regions are divided by using a non-uniform grid and are given different weights, and finally the simulation process of the neutral beam injection is realized. The application realizes the simulation of the injection process of the neutral beam particles by using the narrow particle beam model, can obtain the neutral particle and fast ion distribution at any position in the plasma, has high calculation efficiency and strong numerical stability, and is a stable and efficient numerical simulation method.

The embodiment of the invention provides an auxiliary film forming device and a film forming system. The auxiliary film forming device comprises a vacuum cavity and an auxiliary film forming structure, the surface of the vacuum cavity comprises a first surface, a second surface and a side surface; the auxiliary film forming structure comprises: a first plasma source assembly located on the side surface; the first plasma source assembly comprises a first electrode component and a first connecting part, and the first electrode component comprises a first polar plate and a first electrode; the first polar plate comprises a bombardment side and a non-bombardment side, the first connecting part is located on one side of the non-bombardment side, and the first electrode is located between the first connecting part and the first polar plate; the gas path assembly is used for providing gas to the bombardment side of the first plasma source assembly and transmitting at least part of ions formed by gas discharge to the substrate. The first plasma source assembly is arranged, and the first electrode component arranged in the first plasma source assembly can improve the uniformity of the auxiliary film forming device in the process of carrying out partial ion deposition on the substrate.

The application provides a preparation method of a P-type amorphous silicon thin film of a heterojunction cell, a thin film and application, relates to the technical field of solar cell preparation, and comprises the following steps: placing a silicon wafer on a carrier plate and entering a film plating cavity, wherein the film plating cavity forms a channel from an inlet to an outlet; control parameters of the film plating cavity are set, and a gas pump arranged at one end of the film plating cavity is enabled to form a certain directional gas flow in the film plating cavity; the carrier plate moves on the channel of the film plating cavity, and special gas with different input parameters is introduced into multiple positions of the film plating cavity, wherein the special gas comprises borane, hydrogen and silane, and the input parameters comprise the ratio, content and power of the borane, hydrogen and silane; under the directional gas flow, the silicon wafer is enabled to form a continuously gradient-doped P-type amorphous silicon thin film through ion deposition during movement from the inlet to the outlet of the film plating cavity, so that the problem of complicated film preparation operation and high cost in the prior art is solved.

The utility model provides a target material, relates to the field of high-vacuum magnetron sputtering micro-nano film manufacturing, and aims to improve the uniformity of film preparation. The target material comprises a target surface; the target surface comprises a concave part which surrounds the center of the target material, and the first section of the concave part is arc-shaped. The first section is obtained by cutting off the concave part in the radial direction of the target material. According to the target material provided by the invention, the concave part is formed in the region with the high magnetic field intensity of the target surface, and the target material ions bombarded by ions in the target surface region with the low magnetic field intensity are less; the area with the large magnetic field intensity should be bombarded by the ions to form more target ions, but as the concave part is formed in the area with the large magnetic field intensity on the target surface, some bombarded target ions are deposited on the inner side wall of the concave part, so that balance is realized, and the purpose of uniform deposition of the thin film is achieved.

A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.

Sleeves (402) that can be disposed on either end of a bushing (204) to improve the wear characteristics and usable lifetime of the bushing (204) is disclosed. During the use of the bushing (204), such as when a machine (100) including the bushing is operated, the sleeves (402) may be in primary contact with abrasive elements (e.g., other parts of the machine, dirt, rock, etc.) and wear, while the underlying bushing (204) is protected, at least in part, from wear and tear. The sleeves (402) may include a bulk material, such as steel, with a hard coating (412) thereon, such as hard chromium, tungsten carbide, or the like. The hard coating (412) may be formed by any variety of processes, such as electroplating, plasma deposition, thermal deposition, or the like. In some cases, the sleeves (402), after being worn from use, may be replaced or refurbished to further extend the lifetime of the bushing (204).