Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition

Abstract

The invention relates to a method for realizing metallization of the back of an indium tin oxide (ITO) target material by ion deposition. The method comprises the following steps: preparing indium into an indium target; after ultrasonically cleaning and drying the ITO target material, mounting and fixing the ITO target material on a workpiece rest of a multi-arc ion plating machine; after cleaning under biasing, starting the multi-arc ion plating function and depositing one layer of metal indium film on the surface of the ITO, wherein in the plating process, the temperature is 100 to 150 DEG C, the voltage is 20 to 80 V, the current is 0.1 to 0.6 A, the time is 5 to 15 minutes and the argon pressure intensity is 0.3 to 1 Pa; and cooling, taking out and cleaning the target material to obtain the ITO target material with the surface subjected to uniform metallization. The method is simple; the back of the ITO target material can be metalized through multi-arc ion deposition and then production of components can be realized by braze welding; the metalized layer has a high binding force and a high speed; and pollution is avoided, other metal impurities are not introduced, and recovery of the target material is promoted.

Description

technical field [0001] The invention relates to a manufacturing method of an ITO target component used in the preparation of a transparent conductive film, in particular to a method for realizing the metallization of the back of the ITO target by ion deposition. Background technique [0002] Transparent conductive oxide (TCO) thin film materials are widely used in the fields of flat display and solar cells, among which ITO is the most widely used TCO material. The working state of the ITO target during the preparation of the ITO thin film has an important impact on the performance of the thin film . [0003] In the coating process of the ITO target, the ITO target is connected with a back plate with good thermal conductivity and certain mechanical strength to form a target assembly. The metal back plate mainly provides sufficient mechanical strength support for the target in magnetron sputtering , and at the same time, the large amount of heat energy generated by the target...

AI Technical Summary

Problems solved by technology

[0007] The pressure brazing method is suitable for the welding of the metal target and the back plate, but it is not suitable for the brittle ITO ceramic target. Electron beam welding is still a melting welding method, which is only suitable for the welding of the metal target and the back plate, while the ITO target The melting point of the material and the back plate is very different, so it is not used for electron beam welding method

The sintering method of silver paste on the back will not only affect the performance of the ITO target at a higher sintering temperature (600 ~ 800 ° C), but also the silver, copper and other additives contained in the silver paste will be introduced when the target is recycled. A large number of other metal ions increase the cost of target recycling

The electrolytic method not only produces a large amount of pollution, but also the metallization layer has voids and is not dense, which affects the subsequent brazing effect

The conventional method of evaporation and sputtering to prepare metallization requires expensive equipment, and due to the low coating speed and low efficiency, the most important thing is that the bonding force between the metal layer and the target is not high, which affects the brazing effect

Therefore, the current back metallization process of various ITO targets is not very ideal.