7 results about "Ion beam deposition" patented technology

This application discloses a method for preparing an air gap in a semiconductor structure and a semiconductor structure. The method includes: S1: placing a semiconductor substrate in the chamber of an ion beam deposition apparatus, the semiconductor substrate having at least one trench; S2: adjusting the semiconductor substrate to a first angle, using a first ion beam output from a first ion beam generator to bombard a target material, generating sputtered particles, and depositing a first film layer in a portion of the top and sidewalls of the trench; S3: adjusting the semiconductor substrate to a second angle, using a second ion beam generator to output a second ion beam to etch a first region of the first film layer, removing the first region of the first film layer; repeating S2 and S3 until an air gap meeting preset conditions is formed in the trench. This method can control the volume and depth of the air gap formed in the trench by controlling the angle at which the first film layer is deposited in the top and sidewalls of the trench, thus achieving in-situ control of the air gap.

The present embodiments relate to a write head with an asymmetrical side gap (SG) design. In the asymmetrical design, the main pole can be disposed offset to a central axis of the write head such that the main pole is closer to a first side shield (SS) portion than a second SS portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process. The asymmetrical design can provide a narrower side gap width while mitigating any writability limitations or constraints caused by scaling down the SG.

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.

The present invention provides a write head having an asymmetrical side gap (SG) that offers a narrower side gap (SG) width while mitigating any limitations or constraints on write capability that may arise from reducing the side gap SG. [Solution] In the asymmetrical writing head 600, the main pole 602 is positioned offset with respect to the central axis A1 of the writing head such that it is closer to the first SS 606A portion than to the second side shield (SS) 606B portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process.

Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

The utility model provides a wafer stage device of a multifunctional ion beam deposition and etching machine, which comprises a stage plate, one side of the top end of the stage plate is connected with a rotating arm, the rotating arm and the stage plate are driven to rotate through an external rotation driving mechanism, the bottom end of the stage plate is connected with a sealing box body, the stage plate and the sealing box body form a cavity, and the sealing box body is connected with the sealing box body. A carrier driving assembly and a wafer lifting assembly are connected in the cavity, a groove with an outward opening is formed in the side, close to the external rotation driving mechanism, of the rotating arm, the groove is connected with the external rotation driving mechanism in a clamped mode and then connected with the external rotation driving mechanism through a bolt, and the contact area between the external rotation driving mechanism and the rotating arm is indirectly increased; the external rotation driving mechanism can bear the carrying table plate and the rotating arm, so that the carrying table plate and the rotating arm are prevented from falling down under the self-gravity, the external rotation driving mechanism and the rotating arm are connected more stably, the requirement of the etching process is ensured, and the safety is improved.

This invention relates to a method for fabricating a light-emitting element based on an ultra-smooth interface composite functional transparent conductive layer, comprising the following steps: (1) providing a substrate and performing epitaxial growth; (2) growing a composite functional layer with a thickness of 5-10 nm on the surface of the epitaxial structure; (3) polishing the composite functional layer to ensure that the surface roughness Ra < 0.2 nm; (4) defining the photonic crystal pattern and etching photonic crystal pre-holes in the composite functional layer; (5) depositing the composite transparent conductive layer: firstly, using an atomic layer deposition system (ALD), filling the photonic crystal pre-holes with an ITO material of an indium-tin weight ratio of 90:10, and then growing a second ITO layer with a thickness of 30 nm and an indium-tin weight ratio of 95:5 as a current diffusion layer by sputtering or ion beam deposition, and finally performing high-temperature thermal annealing; this invention optimizes the light extraction efficiency and current diffusion performance of the device by combining fundamental planarization of the substrate interface with the precise fabrication of nanophotonic structures.