32 results about "Ion beam deposition" patented technology

This application discloses a method for preparing an air gap in a semiconductor structure and a semiconductor structure. The method includes: S1: placing a semiconductor substrate in the chamber of an ion beam deposition apparatus, the semiconductor substrate having at least one trench; S2: adjusting the semiconductor substrate to a first angle, using a first ion beam output from a first ion beam generator to bombard a target material, generating sputtered particles, and depositing a first film layer in a portion of the top and sidewalls of the trench; S3: adjusting the semiconductor substrate to a second angle, using a second ion beam generator to output a second ion beam to etch a first region of the first film layer, removing the first region of the first film layer; repeating S2 and S3 until an air gap meeting preset conditions is formed in the trench. This method can control the volume and depth of the air gap formed in the trench by controlling the angle at which the first film layer is deposited in the top and sidewalls of the trench, thus achieving in-situ control of the air gap.

Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.

The present invention belongs to the field of microscale heat transfer, and particularly relates to a method for measuring the thermal resistance of a solid-liquid interface based on a nano-heater wire. The method includes: (1) depositing gold electrodes on a silicon substrate covered with a silicon dioxide insulating layer, etching grooves between the electrodes, and using ion beam deposition of metal to weld the metal nano-heater wire on the gold electrodes, so that it is suspended above the grooves; (2) passing a constant heating current through the heater wire for heating, and obtaining the heat flux density passing through the solid-liquid interface from the electric heating power; (3) solving the cylindrical coordinate heat conduction equation to obtain the temperature rise of the liquid at the solid-liquid interface; (4) measuring the resistance of the heating wire, and obtaining the temperature rise of the heater wire according to the resistance-temperature relationship of the heating wire; (5) obtaining the thermal resistance of the solid-liquid interface through the calculated interface heat flux, the temperature rise of the solid at the interface, and the temperature rise of the liquid at the interface. The method disclosed by the present invention can measure the thermal resistance of the solid-liquid interface between a metal and a liquid in a short time.

Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.

The present embodiments relate to a write head with an asymmetrical side gap (SG) design. In the asymmetrical design, the main pole can be disposed offset to a central axis of the write head such that the main pole is closer to a first side shield (SS) portion than a second SS portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process. The asymmetrical design can provide a narrower side gap width while mitigating any writability limitations or constraints caused by scaling down the SG.

The invention discloses ion beam deposition equipment and an alloy film deposition method, and relates to the technical field of alloy preparation.The ion beam deposition equipment comprises the steps that firstly, the sputtering time of all alloy elements is calculated according to the thickness of a pre-deposited alloy film, the proportion of all the alloy elements in the alloy film and the deposition rate of all the alloy elements, and then the sputtering time of all the alloy elements is calculated; the first ion source is controlled to generate a first ion beam, the first carrying table is controlled to rotate, the target materials on all the subareas of the first carrying table circularly rotate to a first ion beam focusing area multiple times and are sputtered and deposited to the surface of a sample located on the second carrying table through the first ion beam, an alloy film is formed, and all the target materials correspond to alloy elements one to one; meanwhile, target material particles are blocked or allowed to be deposited on the surface of a sample in cooperation with a baffle, so that the total time of sputtering of each target material in the target area by the first ion beam is controlled to be the calculated sputtering time of the corresponding alloy element, and accurate regulation and control of the proportion of each alloy element in the alloy film are achieved; the content of impurity elements in the alloy film is reduced.

The disclosure provides a mask plate absorption layer preparation method, a mask plate and a preparation method thereof, and relates to the field of photolithography technology. The mask plate absorption layer preparation method comprises the following steps: obtaining a mask substrate; and preparing an actual absorption layer on the surface of the mask substrate by ion beam deposition, wherein the stress of the actual absorption layer is regulated by changing the relative angle between the mask substrate and a target material during ion beam deposition to adjust the inclination angle between the incident direction of target particles required for preparing the actual absorption layer and the direction perpendicular to the surface of the mask substrate, so as to control the deformation amount and / or surface figure PV of the surface of the mask substrate.

The invention discloses an AI high-frequency high-speed electronic substrate-oriented ion beam composite regulation and control method, and relates to the technical field of semiconductor manufacturing and electronic packaging. Comprising the following steps: (1) carrying out ion implantation modification on the surface of a base material; (2) depositing and bonding a seed crystal layer by a magnetic filtering cathode vacuum arc; (3) depositing an ultralow-profile initial conductor layer through high-power pulse magnetron sputtering; (4) performing pulse electroplating to thicken the conductor; and (5) surface ion beam polishing. Through the dual effects of ion beam deposition and polishing, a conductor circuit with an extremely smooth surface is manufactured, the conductor loss of a millimeter wave frequency band is remarkably reduced, the dielectric property is improved by combining ion implantation, so that the insertion loss in a 50-60GHz frequency band can be stably controlled at-1.1 dB / inch or lower, and international leading technical indexes are benchmarked and even exceeded.

A magnetoelectric storage element based on a PMN-PT ferroelectric / ferromagnetic composite film and a preparation method thereof, belonging to the field of semiconductor integrated circuit technology, wherein the preparation of a small-sized FeCo ferromagnetic film is to mask a specific pattern on a PMN-PT single crystal substrate by using ion beam deposition combined with a photolithography process; the PMN-PT single crystal piezoelectric substrate and the Fe 65 Co 35 The alloy target is placed in a sputtering chamber, and ion beam sputtering is used to deposit a ferromagnetic thin film. Compared to traditional non-volatile memory, the magnetoelectric memory device produced by this invention offers advantages such as low power consumption and fast read / write speeds, which are crucial for meeting the practical needs of future memory devices. The use of ion beam sputtering to produce layered composite thin film devices is simple and compatible with semiconductor processes.

The invention discloses a preparation method of a tungsten oxide thin film used in an electronic component, and belongs to the technical field of thin film materials. The film is mainly prepared by using an ion beam deposition system. And feeding the substrate into an ion plating deposition system, and plating a tungsten oxide film in the process of changing the plating process parameters. The method is easy and convenient to operate and high in controllability, and the prepared film is stable in performance and completely meets the performance requirements of electronic components or electrochromic composite film layers and the like.

A method of forming a low resistivity ruthenium (Ru) thin film includes depositing ruthenium onto a substrate by deposition with an auxiliary ion beam in a process chamber having a reactive gas species and an inert gas species. The temperature of the substrate is at least 250 DEG C. The thickness of the obtained ruthenium thin film does not exceed 30 nm, the resistivity is smaller than 12 [mu] omega.cm, and the crystal structure comprises (0001) oriented crystal grains. The electrical resistivity is different under different thicknesses, for example, the electrical resistivity of a film of 50 nm or more is less than 9 [mu] Omega * cm, the electrical resistivity of a film of 35 nm or more is less than 9.5 [mu] Omega * cm, the electrical resistivity of a film of 20 nm or more is less than 11 [mu] Omega * cm, the electrical resistivity of a film of 10 nm or more is less than 15 [mu] Omega * cm, and the electrical resistivity of a film of 2 nm or more is less than 20 [mu] Omega * cm. The average crystal size of the grains is at least three times the thickness of the film.

The invention relates to a transmission electron microscope sample preparation method for battery positive electrode secondary particle pellets, and belongs to the field of transmission electron microscopes. The method comprises the following specific operation steps: (1) immersing an electrode plate into a dimethyl carbonate solvent, ultrasonically dispersing and dripping the electrode plate onto a silicon wafer, and drying; (2) a complete secondary particle small ball is found under an electron beam of a concentrated ion beam system, and a protective layer is deposited on a target area on the surface of the complete secondary particle small ball; (3) fixedly welding the top end of the nano manipulator with the secondary particle small ball; (4) controlling the nanometer control hand to carry the secondary particle small balls to be separated from the silicon wafer; (5) grooves are etched in the grid columns, a second metal layer is deposited through ion beams, and the secondary particle small balls are welded to the grooves; (6) etching and separating the nano manipulator from the secondary particle spheres; and (7) carrying out thinning cleaning on the secondary particle pellets to obtain the secondary particle pellet slice for transmission electron microscope characterization. The operation steps of rough cutting, fine cutting and U-shaped cutting are omitted, and the sample preparation time is greatly shortened.

The invention relates to a multilayer super-smooth carbon film and a preparation method and application thereof. The multi-layer super-smooth carbon film comprises a transition layer, a working layer and an outermost layer which are sequentially formed on the surface of a substrate, wherein the transition layer is a metal and nonmetal doped carbon film; the working layer is a multi-layer hydrogen-containing amorphous carbon film formed by alternate soft layers and hard layers; and the outermost layer is a hydrogen-containing amorphous carbon film. According to the method, a mode of combining ion beam deposition and radio frequency magnetron sputtering is adopted, and the soft and hard alternating multi-layer high-hydrogen-content amorphous carbon film with the ultralow friction characteristic is deposited on the surface of a base body such as a bearing and a gear; the technical problems that a protective film on the surface of a moving part of heavy equipment is limited in bearing capacity, unstable in friction coefficient and serious in abrasion under the heavy-load or ultrahigh-heavy-load working condition are solved, the lubricating performance of a carbon film under the extreme heavy-load and harsh working condition is improved through the soft and hard alternate strengthening and toughening multi-layer structural design of the film, and the service life of the carbon film is prolonged. The problems that a solid coating is large in surface friction torque and short in service life are solved.

An ion beam deposition method includes placing a substrate into an ion beam deposition apparatus, irradiating an ion beam from an ion beam source toward a target plate, and rotating the target plate during the irradiating of the ion beam. The target plate includes a first region that includes a first material, and a second region that includes a second material different from the first material.

The present disclosure provides a method for depositing material onto a substrate. The method comprising the steps of placing the substrate onto a substrate stage in a vacuum chamber. Using a plasma source to generate ions within the vacuum chamber. The generated ions from the plasma source are collimated using a first collimator. The collimated ions are directed as a broad ion beam at a target within the vacuum chamber. Material is sputtered from the target toward the substrate as part of a deposition plume using the collimated broad ion beam. A second collimator is placed between the target and the substrate within the vacuum chamber. The sputtered material from the deposition plume is collimated using the second collimator. The substrate is exposed to the collimated sputtered material from the deposition plume.

The invention discloses a DLC (diamond-like carbon) coating method with a deformable substrate, which comprises the following steps: placing the deformable substrate in a vacuum chamber, and cleaning; depositing a DLC (Diamond Like Carbon) film on the surface of the cleaned deformable substrate by adopting an ion beam deposition technology; and carrying out plasma fluorination treatment or oxidation treatment on the surface of the DLC film. By adopting the technical scheme of the invention, the DLC film and the deformable substrate can be well adhered together without falling off, and the obtained DLC film has high deformability, ductility and stability.

The present application relates to the technical field of semiconductor testing and failure analysis, and particularly relates to a chip failure analysis sample preparation method based on three-dimensional scale, comprising the following steps: S1, preparing a chip into a planar sample, positioning a failure area of the planar sample and depositing a metal mark point above the failure area, obtaining an initial sample with the metal mark point; S2, sequentially depositing a first carbon film by using an electron beam and depositing a second carbon film by using an ion beam on a first surface of the initial sample, and turning over the initial sample. The present application deposits a metal mark point above a sample failure area as a three-dimensional space anchor point, realizes reliable physical coordinate transmission in a multi-dimensional turning sample preparation process, solves the problem that the original defect position is easily lost after sample turning or rotating in a traditional method, and guarantees the spatial positioning accuracy of a single microscopic failure area in orthogonal multi-direction continuous cutting preparation.

The invention relates to the technical field of photoetching, in particular to an ion beam deposition simulation method. Air layer modeling is introduced in the ion beam deposition simulation process, the energy loss of deposited atoms in the transmission process is accurately considered, the physical authenticity of the simulation model is improved, initial energy is generated based on the acceptance and rejection sampling method, the final speed of the deposited atoms reaching the surface of the substrate is obtained, and the simulation precision is improved. According to the method, the transmission process of deposited atoms can be accurately simulated, the surface roughness after ion beam deposition can be predicted, the precision of deposition simulation is remarkably improved, and the real situation in the deposition process is fully restored, so that a high-precision simulation model is generated, the accuracy and practicability of the simulation model are improved, and the prediction precision of the surface roughness is improved.

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.

The present invention provides a write head having an asymmetrical side gap (SG) that offers a narrower side gap (SG) width while mitigating any limitations or constraints on write capability that may arise from reducing the side gap SG. [Solution] In the asymmetrical writing head 600, the main pole 602 is positioned offset with respect to the central axis A1 of the writing head such that it is closer to the first SS 606A portion than to the second side shield (SS) 606B portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process.

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.

Methods for forming a low resistivity ruthenium (Ru) thin film that include depositing ruthenium onto a substrate via ion beam deposition with assist ion beam in a process chamber having reactive and noble gas species therein. The substrate is at at least 250° C. A resulting thin ruthenium film has a thickness of no more than 30 nm, a resistivity less than 12 μ·cm and a crystalline structure comprising grains having a (0001) orientation. The resistivity will differ at different thickness; for example, less than 9 μΩ-cm for films of 50 nm and thicker, less than 9.5 μΩ-cm for films of 35 nm and thicker, less than 11 μΩ-cm for films of 20 nm and thicker, less than 15 μΩ-cm for films of 10 nm and thicker or less than 20 μΩ-cm for films of 2 nm and thicker. The grains have a mean grain size at least three times the film thickness.

The invention relates to a method for depositing a stack of thin layers (14) on a face (11) of a glass substrate (10) by cathode sputtering, the stack of thin layers (14) including a silver-based metal functional layer (140, 180) deposited directly on a zinc oxide-based bottom layer (129, 169), the method including the use of an ion source, characterised in that the bottom layer (129, 169) is bombarded with ions during all or part of its deposition and has a biaxial texture: - an out-of-plane texture with an out-of-plane mosaicity of less than 15°; and - an in-plane texture with an in-plane mosaicity of less than 50°.

The application discloses a kind of in-situ testing methods of material shear stress under double-beam system, it is related to shear stress testing technical field, comprising the following steps: step one, with electron beam perspective analysis sample block, with ion beam imaging to determine processing area;Step two, ion beam processing microblock topography;Step three, mechanical hand assisted microblock extraction and finishing;Step four, with ion beam deposition microblock;Step five, ion beam processing shear sample;Step six, with electron beam perspective carries out pure shear test.The application provides a kind of method for determining critical shear stress on micro-nano scale to specific structure metal material, provides important support for regulating metal material plastic deformation.

The utility model provides a wafer stage device of a multifunctional ion beam deposition and etching machine, which comprises a stage plate, one side of the top end of the stage plate is connected with a rotating arm, the rotating arm and the stage plate are driven to rotate through an external rotation driving mechanism, the bottom end of the stage plate is connected with a sealing box body, the stage plate and the sealing box body form a cavity, and the sealing box body is connected with the sealing box body. A carrier driving assembly and a wafer lifting assembly are connected in the cavity, a groove with an outward opening is formed in the side, close to the external rotation driving mechanism, of the rotating arm, the groove is connected with the external rotation driving mechanism in a clamped mode and then connected with the external rotation driving mechanism through a bolt, and the contact area between the external rotation driving mechanism and the rotating arm is indirectly increased; the external rotation driving mechanism can bear the carrying table plate and the rotating arm, so that the carrying table plate and the rotating arm are prevented from falling down under the self-gravity, the external rotation driving mechanism and the rotating arm are connected more stably, the requirement of the etching process is ensured, and the safety is improved.

This invention relates to a method for fabricating a light-emitting element based on an ultra-smooth interface composite functional transparent conductive layer, comprising the following steps: (1) providing a substrate and performing epitaxial growth; (2) growing a composite functional layer with a thickness of 5-10 nm on the surface of the epitaxial structure; (3) polishing the composite functional layer to ensure that the surface roughness Ra < 0.2 nm; (4) defining the photonic crystal pattern and etching photonic crystal pre-holes in the composite functional layer; (5) depositing the composite transparent conductive layer: firstly, using an atomic layer deposition system (ALD), filling the photonic crystal pre-holes with an ITO material of an indium-tin weight ratio of 90:10, and then growing a second ITO layer with a thickness of 30 nm and an indium-tin weight ratio of 95:5 as a current diffusion layer by sputtering or ion beam deposition, and finally performing high-temperature thermal annealing; this invention optimizes the light extraction efficiency and current diffusion performance of the device by combining fundamental planarization of the substrate interface with the precise fabrication of nanophotonic structures.

The invention discloses a preparation method of a tungsten carbide film, which can be used in the field of semiconductors, and the preparation method of the tungsten carbide film comprises the following steps: firstly, introducing inert gas into an auxiliary ion source to pre-clean a sample, and introducing inert gas into a sputtering ion source to pre-clean the surface of a target material; then, inert gas is introduced into the sputtering ion source, and a sputtering ion beam is formed; introducing reaction gas into the auxiliary ion source to form a reaction ion beam; then, the sputtering ion beam bombards the surface of the target material, and sputtering particles are generated; and finally, carrying out chemical reaction on the sputtering particles and the reaction ion beam, and depositing on the surface of the sample to form the tungsten carbide film. Therefore, the tungsten carbide thin film is prepared through the ion beam deposition method, the sample and the target material are pre-cleaned before the tungsten carbide thin film is deposited, dirt and attachments such as a natural oxide layer on the surfaces of the sample and the target material are pre-cleaned, impurity pollution is reduced, and the tungsten carbide thin film with high adhesion and high quality can be prepared.

This invention belongs to the field of surface protection technology, specifically relating to a high-entropy alloy composite film, its preparation method, and its application. The preparation method of the high-entropy alloy composite film provided by this invention employs alternating magnetron sputtering and ion beam deposition of the high-entropy alloy film, thereby enhancing the adhesion between the film and the substrate, maintaining good surface roughness, and significantly improving the wear resistance of the film surface. Subsequent ion doping of the high-entropy alloy film increases the film density, reduces the number of microcells on the surface and the number of channels for corrosive media to reach the substrate, and also reduces the number of channels for oxidizing media to reach the substrate, thereby improving the film quality, corrosion resistance, and high-temperature resistance. Simultaneously, it further increases the film's hardness and reduces its coefficient of friction, thus enabling the preparation of a wear-resistant, corrosion-resistant, and high-temperature-resistant high-entropy alloy-like two-dimensional layered film on the substrate surface.

An electrostatic chuck for ion beam deposition systems having an assist beam and that can be operated at elevated temperature. The electrostatic chuck includes or is operably connected to a power source capable of outputting at least 1 milliAmp of current, to provide a nominal voltage of at least 150V (+150V or −150V) and a total voltage differential, whether for a monopolar source or across multiple power sources, of at least 300V. The power source is isolated or floating with respect to ground.

An electrostatic chuck for ion beam deposition systems having an assist beam and that can be operated at elevated temperature. The electrostatic chuck includes or is operably connected to a power source capable of outputting at least 1 milliAmp of current, to provide a nominal voltage of at least 150V (+150V or -150V) and a total voltage differential, whether for a monopolar source or across multiple power sources, of at least 300V. The power source is isolated or floating with respect to ground.