55 results about "Ion beam deposition" patented technology

Disclosed herein is an ion guide for guiding an ion beam along an ion path, the ion guide having a longitudinal axis corresponding to the ion path. The ion guide includes a plurality of electrode plates arranged perpendicular to the longitudinal axis, each electrode plate having an opening and arranged so that the longitudinal axis extends through its respective opening, wherein the openings collectively define an ion guide volume. The ion guide extends or is configured to extend through a separation wall separating an adjacent first pumping chamber and a second pumping chamber. The ion guide has a first portion in which a gap is formed between at least some of the electrode plates so that uncharged gas can escape from the ion guide volume, wherein the first portion is entirely located in the first pumping chamber. A second portion prevents neutral gas from escaping from the ion guide volume between adjacent electrode plates, in which a sealing element is arranged between adjacent electrode plates, and the second portion extends at least from the separation wall into the second pumping chamber.

This application discloses a method for preparing an air gap in a semiconductor structure and a semiconductor structure. The method includes: S1: placing a semiconductor substrate in the chamber of an ion beam deposition apparatus, the semiconductor substrate having at least one trench; S2: adjusting the semiconductor substrate to a first angle, using a first ion beam output from a first ion beam generator to bombard a target material, generating sputtered particles, and depositing a first film layer in a portion of the top and sidewalls of the trench; S3: adjusting the semiconductor substrate to a second angle, using a second ion beam generator to output a second ion beam to etch a first region of the first film layer, removing the first region of the first film layer; repeating S2 and S3 until an air gap meeting preset conditions is formed in the trench. This method can control the volume and depth of the air gap formed in the trench by controlling the angle at which the first film layer is deposited in the top and sidewalls of the trench, thus achieving in-situ control of the air gap.

Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.

The present invention belongs to the field of microscale heat transfer, and particularly relates to a method for measuring the thermal resistance of a solid-liquid interface based on a nano-heater wire. The method includes: (1) depositing gold electrodes on a silicon substrate covered with a silicon dioxide insulating layer, etching grooves between the electrodes, and using ion beam deposition of metal to weld the metal nano-heater wire on the gold electrodes, so that it is suspended above the grooves; (2) passing a constant heating current through the heater wire for heating, and obtaining the heat flux density passing through the solid-liquid interface from the electric heating power; (3) solving the cylindrical coordinate heat conduction equation to obtain the temperature rise of the liquid at the solid-liquid interface; (4) measuring the resistance of the heating wire, and obtaining the temperature rise of the heater wire according to the resistance-temperature relationship of the heating wire; (5) obtaining the thermal resistance of the solid-liquid interface through the calculated interface heat flux, the temperature rise of the solid at the interface, and the temperature rise of the liquid at the interface. The method disclosed by the present invention can measure the thermal resistance of the solid-liquid interface between a metal and a liquid in a short time.

Ion beam deposition processes, with assist or etch, that produce a tungsten interconnect and an inserted layer that can have a graduated composition in contact with an underlayer. The interconnect has the desirable alpha phase of the tungsten layer and a microstructure with highly oriented (110) grains with at least 95%, or at least 99% or 99.9% and even 100%, of the deposited tungsten thin film having a (110) crystalline orientation plane, relative to the top surface of the film.

The present embodiments relate to a write head with an asymmetrical side gap (SG) design. In the asymmetrical design, the main pole can be disposed offset to a central axis of the write head such that the main pole is closer to a first side shield (SS) portion than a second SS portion. The asymmetrical design can be achieved using an ion-beam etching (IBE) or ion-beam deposition (IBD) process. The asymmetrical design can provide a narrower side gap width while mitigating any writability limitations or constraints caused by scaling down the SG.

The invention discloses ion beam deposition equipment and an alloy film deposition method, and relates to the technical field of alloy preparation.The ion beam deposition equipment comprises the steps that firstly, the sputtering time of all alloy elements is calculated according to the thickness of a pre-deposited alloy film, the proportion of all the alloy elements in the alloy film and the deposition rate of all the alloy elements, and then the sputtering time of all the alloy elements is calculated; the first ion source is controlled to generate a first ion beam, the first carrying table is controlled to rotate, the target materials on all the subareas of the first carrying table circularly rotate to a first ion beam focusing area multiple times and are sputtered and deposited to the surface of a sample located on the second carrying table through the first ion beam, an alloy film is formed, and all the target materials correspond to alloy elements one to one; meanwhile, target material particles are blocked or allowed to be deposited on the surface of a sample in cooperation with a baffle, so that the total time of sputtering of each target material in the target area by the first ion beam is controlled to be the calculated sputtering time of the corresponding alloy element, and accurate regulation and control of the proportion of each alloy element in the alloy film are achieved; the content of impurity elements in the alloy film is reduced.

The disclosure provides a mask plate absorption layer preparation method, a mask plate and a preparation method thereof, and relates to the field of photolithography technology. The mask plate absorption layer preparation method comprises the following steps: obtaining a mask substrate; and preparing an actual absorption layer on the surface of the mask substrate by ion beam deposition, wherein the stress of the actual absorption layer is regulated by changing the relative angle between the mask substrate and a target material during ion beam deposition to adjust the inclination angle between the incident direction of target particles required for preparing the actual absorption layer and the direction perpendicular to the surface of the mask substrate, so as to control the deformation amount and / or surface figure PV of the surface of the mask substrate.

The utility model discloses a target material device and an ion beam deposition system, the target material device is applied to the ion beam deposition system, the ion beam deposition system comprises a process generating device, and a process chamber is formed in the process generating device; the target material device comprises a first carrying table used for installing a target material, and the first carrying table is configured to be capable of being arranged in a process chamber; the protective cover can cover the first carrying table, the protective cover is provided with a sputtering window, and the protective cover is configured to be arranged in the process chamber; the driving mechanism comprises a driving assembly and a driving shaft assembly, the driving shaft assembly comprises an inner shaft and an outer shaft which are connected in a sleeved mode, the driving assembly is connected with the inner shaft and the outer shaft and used for driving the inner shaft and the outer shaft to rotate, the inner shaft is connected with the first carrying table, and the outer shaft is connected with the protective cover. The outer shaft is used for driving the protective cover to be switched between the sputtering station and the protective station. The target material device is not easy to cause pollution of the target material, and is compact in structural design and relatively small in mounting occupied space.

The invention discloses a method for preparing a doped semiconductor film by combining magnetic control and ion beam, which belongs to the technical field of semiconductor film preparation, and comprises the following steps: firstly, preparing a doped source Cu film by using an ion beam deposition system, and after the Cu film is prepared, purging the surface of the Cu film by using N2 in the system to achieve the passivation effect of the Cu film; the method comprises the following steps: preparing a diluted magnetic semiconductor AIN thin film, forming effective combination with an ALN thin film, transferring a sample into a magnetic control chamber, and preparing a diluted magnetic semiconductor layer AlN thin film. And after the doped film layer is prepared, the whole film is subjected to nitrogen atmosphere heat treatment at the temperature of 300-500 DEG C, and finally the Cu-doped AlN diluted magnetic semiconductor film is prepared. The method is simple and controllable, the film layer quality is high, and the obtained film can meet the use requirements of spinning electron components.

Provided in the present invention are a Josephson junction thin film and a preparation method therefor, and a semiconductor structure. The preparation of the Josephson junction thin film can be completed in the same chamber as ion beam deposition, thereby reducing the oxidation of a superconducting thin film by transportation, such that the relative operation is simpler, the steps are fewer, and the production capacity is also much higher than that of an original multi-chamber linkage. The prepared Josephson junction thin film is not damaged by plasma; a superconducting thin film prepared therefrom has the preferred orientation, and can better reduce resistance; and a barrier layer thin film prepared therefrom has good continuity and lower roughness, and the content of nitrogen or oxygen or silicon in the barrier layer can be accurately regulated and controlled, thereby finally obtaining a Josephson junction having good performance.

The invention discloses an AI high-frequency high-speed electronic substrate-oriented ion beam composite regulation and control method, and relates to the technical field of semiconductor manufacturing and electronic packaging. Comprising the following steps: (1) carrying out ion implantation modification on the surface of a base material; (2) depositing and bonding a seed crystal layer by a magnetic filtering cathode vacuum arc; (3) depositing an ultralow-profile initial conductor layer through high-power pulse magnetron sputtering; (4) performing pulse electroplating to thicken the conductor; and (5) surface ion beam polishing. Through the dual effects of ion beam deposition and polishing, a conductor circuit with an extremely smooth surface is manufactured, the conductor loss of a millimeter wave frequency band is remarkably reduced, the dielectric property is improved by combining ion implantation, so that the insertion loss in a 50-60GHz frequency band can be stably controlled at-1.1 dB / inch or lower, and international leading technical indexes are benchmarked and even exceeded.

A magnetoelectric storage element based on a PMN-PT ferroelectric / ferromagnetic composite film and a preparation method thereof, belonging to the field of semiconductor integrated circuit technology, wherein the preparation of a small-sized FeCo ferromagnetic film is to mask a specific pattern on a PMN-PT single crystal substrate by using ion beam deposition combined with a photolithography process; the PMN-PT single crystal piezoelectric substrate and the Fe 65 Co 35 The alloy target is placed in a sputtering chamber, and ion beam sputtering is used to deposit a ferromagnetic thin film. Compared to traditional non-volatile memory, the magnetoelectric memory device produced by this invention offers advantages such as low power consumption and fast read / write speeds, which are crucial for meeting the practical needs of future memory devices. The use of ion beam sputtering to produce layered composite thin film devices is simple and compatible with semiconductor processes.

The invention discloses a preparation method of a tungsten oxide thin film used in an electronic component, and belongs to the technical field of thin film materials. The film is mainly prepared by using an ion beam deposition system. And feeding the substrate into an ion plating deposition system, and plating a tungsten oxide film in the process of changing the plating process parameters. The method is easy and convenient to operate and high in controllability, and the prepared film is stable in performance and completely meets the performance requirements of electronic components or electrochromic composite film layers and the like.

The invention provides a preparation method of an MTJ passivation protection layer, a magnetic tunnel junction and a semiconductor device, the preparation method is based on ion beam deposition technology in-situ same-chamber preparation, the preparation method comprises the following steps: providing a to-be-processed sample, the to-be-processed sample comprises a substrate and an MTJ structure located at one side of the substrate; controlling an auxiliary ion source to etch the side wall of the MTJ structure; a sputtering ion source is controlled to sputter a target material, an auxiliary ion source is controlled to introduce reactive gas to form a passivation protection layer, and the passivation protection layer covers the side wall of the MTJ structure and the surface of the side, away from the substrate, of the MTJ structure. According to the preparation method, in the process of preparing the MTJ passivation protection layer, the low-temperature and plasma-damage-free state is kept, the MTJ side wall coverage rate is higher, the purity of the passivation protection layer is higher, the effective use range of the MTJ film layer is larger, the preparation method can still be used in higher technical generations, and damage of high temperature and plasma to the film layer is reduced.

The invention discloses an ion beam deposition system and a target material device thereof. The ion beam deposition system comprises a plurality of target material assemblies made of different materials, a target material fixing base, a magnetofluid transmission shaft assembly and a switching driving assembly. Wherein the multiple target material assemblies are arranged on the target material fixing base in the circumferential direction; one end of the magnetofluid transmission shaft assembly is in transmission connection with the target material fixing seat and drives the target material fixing seat to rotate around the axis of the magnetofluid transmission shaft assembly so as to switch a target material assembly in the multiple target material assemblies to rotate to a target position; the switching driving assembly is in transmission connection with the other end of the magnetofluid transmission shaft assembly so as to drive the magnetofluid transmission shaft assembly to operate. When the target material assemblies need to be replaced, the switching driving assembly drives the magnetofluid transmission shaft assembly to operate and drives the target material fixing base to rotate around the axis of the target material fixing base till the target material assembly in the multiple target material assemblies is switched to rotate to the target position. Therefore, by adopting the target material device, the utilization rate of the target material can be effectively improved, and the production cost is reduced.

An ion guide (36) for guiding an ion beam along an ion path is disclosed, the ion guide having a longitudinal axis (44) corresponding to the ion path, the ion guide comprising a plurality of elongated electrodes arranged about and extending along the longitudinal axis, wherein an inner envelope (120) of the plurality of electrodes defines an ion guide volume (128). The elongated electrodes are formed by electrode wires (42), wherein adjacent electrode wires (42) are arranged at an inter-wire distance (122). The ion guide (36) comprises a retaining structure for supporting and straightening the electrode wires (42) by applying tension or maintaining tension applied to the electrode wires (42). Any portion of the retaining structure that is spaced from the ion guide volume by less than the local inter-wire distance (122) is made of a resistivity less than 10 12 Ω‑cm, preferably less than 10 9 Ω‑cm material, or has a thickness of less than 10 Ω‑cm on the surface facing the ion guide volume. 14 Ω, preferably less than 10 10 Sheet resistivity of Ω.

A method of forming a low resistivity ruthenium (Ru) thin film includes depositing ruthenium onto a substrate by deposition with an auxiliary ion beam in a process chamber having a reactive gas species and an inert gas species. The temperature of the substrate is at least 250 DEG C. The thickness of the obtained ruthenium thin film does not exceed 30 nm, the resistivity is smaller than 12 [mu] omega.cm, and the crystal structure comprises (0001) oriented crystal grains. The electrical resistivity is different under different thicknesses, for example, the electrical resistivity of a film of 50 nm or more is less than 9 [mu] Omega * cm, the electrical resistivity of a film of 35 nm or more is less than 9.5 [mu] Omega * cm, the electrical resistivity of a film of 20 nm or more is less than 11 [mu] Omega * cm, the electrical resistivity of a film of 10 nm or more is less than 15 [mu] Omega * cm, and the electrical resistivity of a film of 2 nm or more is less than 20 [mu] Omega * cm. The average crystal size of the grains is at least three times the thickness of the film.

The invention relates to a transmission electron microscope sample preparation method for battery positive electrode secondary particle pellets, and belongs to the field of transmission electron microscopes. The method comprises the following specific operation steps: (1) immersing an electrode plate into a dimethyl carbonate solvent, ultrasonically dispersing and dripping the electrode plate onto a silicon wafer, and drying; (2) a complete secondary particle small ball is found under an electron beam of a concentrated ion beam system, and a protective layer is deposited on a target area on the surface of the complete secondary particle small ball; (3) fixedly welding the top end of the nano manipulator with the secondary particle small ball; (4) controlling the nanometer control hand to carry the secondary particle small balls to be separated from the silicon wafer; (5) grooves are etched in the grid columns, a second metal layer is deposited through ion beams, and the secondary particle small balls are welded to the grooves; (6) etching and separating the nano manipulator from the secondary particle spheres; and (7) carrying out thinning cleaning on the secondary particle pellets to obtain the secondary particle pellet slice for transmission electron microscope characterization. The operation steps of rough cutting, fine cutting and U-shaped cutting are omitted, and the sample preparation time is greatly shortened.

The invention relates to a multilayer super-smooth carbon film and a preparation method and application thereof. The multi-layer super-smooth carbon film comprises a transition layer, a working layer and an outermost layer which are sequentially formed on the surface of a substrate, wherein the transition layer is a metal and nonmetal doped carbon film; the working layer is a multi-layer hydrogen-containing amorphous carbon film formed by alternate soft layers and hard layers; and the outermost layer is a hydrogen-containing amorphous carbon film. According to the method, a mode of combining ion beam deposition and radio frequency magnetron sputtering is adopted, and the soft and hard alternating multi-layer high-hydrogen-content amorphous carbon film with the ultralow friction characteristic is deposited on the surface of a base body such as a bearing and a gear; the technical problems that a protective film on the surface of a moving part of heavy equipment is limited in bearing capacity, unstable in friction coefficient and serious in abrasion under the heavy-load or ultrahigh-heavy-load working condition are solved, the lubricating performance of a carbon film under the extreme heavy-load and harsh working condition is improved through the soft and hard alternate strengthening and toughening multi-layer structural design of the film, and the service life of the carbon film is prolonged. The problems that a solid coating is large in surface friction torque and short in service life are solved.

The utility model provides an external deposition source conveying device and a focused ion beam deposition connection system, the external deposition source conveying device comprises a deposition source container and a deposition source conveying mechanism, the deposition source container is used for storing deposition source liquid, a deposition source is volatilized through a heater, and the deposition source is conveyed to a focused ion beam machine table through the deposition source conveying mechanism. Due to the fact that the deposition source container is arranged outside the machine table, the size of the deposition source container is not limited, and more deposition sources can be stored, the number of times of replacing consumables is greatly reduced, the vacuum environment in a cavity of the machine table cannot be damaged in the process of adding the consumables, the long-time machine resetting process after feeding is avoided, and the risk of system abnormity is reduced. The focused ion beam deposition connecting system comprises an external deposition source conveying device and a machine table and is used for plating wires through ion beams formed by a deposition source, and gas in a deposition source conveying mechanism enters a cavity of the machine table through a focused ion beam needle in the focused ion beam machine table and is connected with the machine table.

The surface treatment method of the flexible substrate comprises the following steps: cleaning the flexible substrate; forming a diamond-like carbon layer on the flexible substrate through ion beam deposition; plasma fluorination treatment is carried out on the diamond-like carbon layer; and testing the diamond-like carbon layer. According to the method, the flexible substrate and the diamond-like carbon layer can be combined together, the diamond-like carbon layer has good mechanical and chemical performance, the structure has high flexibility and ductility after the flexible substrate and the diamond-like carbon layer are combined, and the method can be used in the fields of flexible electronic products, medical equipment and the like.

An ion beam deposition method includes placing a substrate into an ion beam deposition apparatus, irradiating an ion beam from an ion beam source toward a target plate, and rotating the target plate during the irradiating of the ion beam. The target plate includes a first region that includes a first material, and a second region that includes a second material different from the first material.

The invention provides application of ion beam deposition in preparation of a physically modified IGZO film. The invention further provides a method for preparing the modified IGZO thin film through ion beam deposition. The prepared IGZO film is not damaged by plasma, organic matter residues do not exist, the prepared film can avoid the post-annealing step, more excellent electrical performance is obtained, the prepared IGZO film is higher in purity and lower in roughness, the nitrogen and oxygen content in the passivation layer can be precisely regulated and controlled, and finally the IGZO film with excellent performance is obtained. All the processes can be completed in one ion beam deposition chamber, vacuum does not need to be broken, transmission is reduced, the film preparation time is greatly shortened, and pollution of water, oxygen and the like to the IGZO film is reduced. In addition, the film can be directly modified by changing the incident angle of the ion source, the proportion of reaction gas of the ion source and the ion-atom arrival ratio, and the subsequent modification annealing step is not needed.

The present disclosure provides a method for depositing material onto a substrate. The method comprising the steps of placing the substrate onto a substrate stage in a vacuum chamber. Using a plasma source to generate ions within the vacuum chamber. The generated ions from the plasma source are collimated using a first collimator. The collimated ions are directed as a broad ion beam at a target within the vacuum chamber. Material is sputtered from the target toward the substrate as part of a deposition plume using the collimated broad ion beam. A second collimator is placed between the target and the substrate within the vacuum chamber. The sputtered material from the deposition plume is collimated using the second collimator. The substrate is exposed to the collimated sputtered material from the deposition plume.

According to the Josephson junction film, the preparation method thereof and the semiconductor structure provided by the invention, the preparation of the Josephson junction film can be completed in the same cavity of ion beam deposition, the oxidation of transmission on a superconducting film is reduced, the operation is relatively simpler, the steps are fewer, and the productivity is much higher than that of the original multi-cavity linkage; the prepared Josephson junction thin film is not damaged by plasma, the prepared superconducting thin film has preferred orientation, the resistance can be better reduced, the prepared barrier layer thin film is good in continuity and lower in roughness, the content of nitrogen or oxygen or silicon in the barrier layer can be accurately regulated and controlled, and finally the Josephson junction with excellent performance is obtained.

The invention discloses a DLC (diamond-like carbon) coating method with a deformable substrate, which comprises the following steps: placing the deformable substrate in a vacuum chamber, and cleaning; depositing a DLC (Diamond Like Carbon) film on the surface of the cleaned deformable substrate by adopting an ion beam deposition technology; and carrying out plasma fluorination treatment or oxidation treatment on the surface of the DLC film. By adopting the technical scheme of the invention, the DLC film and the deformable substrate can be well adhered together without falling off, and the obtained DLC film has high deformability, ductility and stability.

The present application relates to the technical field of semiconductor testing and failure analysis, and particularly relates to a chip failure analysis sample preparation method based on three-dimensional scale, comprising the following steps: S1, preparing a chip into a planar sample, positioning a failure area of the planar sample and depositing a metal mark point above the failure area, obtaining an initial sample with the metal mark point; S2, sequentially depositing a first carbon film by using an electron beam and depositing a second carbon film by using an ion beam on a first surface of the initial sample, and turning over the initial sample. The present application deposits a metal mark point above a sample failure area as a three-dimensional space anchor point, realizes reliable physical coordinate transmission in a multi-dimensional turning sample preparation process, solves the problem that the original defect position is easily lost after sample turning or rotating in a traditional method, and guarantees the spatial positioning accuracy of a single microscopic failure area in orthogonal multi-direction continuous cutting preparation.

The invention relates to the technical field of photoetching, in particular to an ion beam deposition simulation method. Air layer modeling is introduced in the ion beam deposition simulation process, the energy loss of deposited atoms in the transmission process is accurately considered, the physical authenticity of the simulation model is improved, initial energy is generated based on the acceptance and rejection sampling method, the final speed of the deposited atoms reaching the surface of the substrate is obtained, and the simulation precision is improved. According to the method, the transmission process of deposited atoms can be accurately simulated, the surface roughness after ion beam deposition can be predicted, the precision of deposition simulation is remarkably improved, and the real situation in the deposition process is fully restored, so that a high-precision simulation model is generated, the accuracy and practicability of the simulation model are improved, and the prediction precision of the surface roughness is improved.

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 10 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 12 μΩ-cm and a thickness less than 300 Å.