Method for preferentially growing metallic single-walled carbon nanotube by using non-metallic silicon oxide as catalyst

A technology of single-walled carbon nanotubes and catalysts, which is applied in the fields of carbon nanotubes, non-metallic elements, chemical instruments and methods, etc., can solve the problem that metallic single-walled carbon nanotubes are difficult to selectively prepare, particle size is difficult to control, The structure is unstable at high temperature and other problems, which achieves good industrial application prospects, simple and easy-to-control processes, and wide applicability.

Active Publication Date: 2013-09-18
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0006] A technical problem solved by the present invention is to overcome the problem that most of the existing catalysts are metal nanoparticles with low melting point, and its structure is unstable at high temperature; at the same time, the common pretreatment method can only obtain non-metallic catalysts with wide particle size distribution, And the particle size is difficult to control and other problems; another technical problem solved by the present invention is to overcome the difficulty of selective preparation of existing metallic single-walled carbon nanotubes, and the subsequent treatment can only be etched to obtain semiconducting single-walled carbon nanotubes. The nanotube problem

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  • Method for preferentially growing metallic single-walled carbon nanotube by using non-metallic silicon oxide as catalyst
  • Method for preferentially growing metallic single-walled carbon nanotube by using non-metallic silicon oxide as catalyst
  • Method for preferentially growing metallic single-walled carbon nanotube by using non-metallic silicon oxide as catalyst

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Embodiment 1

[0043] Embodiment 1. Rapid heating mode

[0044] (1) A silicon wafer with a 55nm silicon oxide nanocatalyst layer deposited by Ar ion beam physical deposition method (the surface of the silicon wafer has a 300nm thermal oxide layer, and a silicon oxide nanolayer is deposited on the surface of the thermal oxide layer), and rapidly heated in an air atmosphere To 900°C, the rapid heating method refers to pushing the silicon wafer substrate containing the catalyst layer directly from room temperature to the center of the chemical vapor deposition furnace, and the center of the chemical vapor deposition furnace has reached the target temperature (900°C) suitable for the growth of single-walled carbon nanotubes; When the temperature of the substrate of the silicon wafer containing the catalyst layer reaches 900°C, anneal in air for 10 minutes, then evacuate the air in the furnace, introduce argon to restore normal pressure and maintain 400 sccm argon for 1.5 minutes, and then re-intr...

Embodiment 2

[0047] Embodiment 2. Semi-rapid heating mode

[0048] (1) A silicon wafer with a 30nm silicon oxide nanocatalyst layer deposited by Ar ion beam physical deposition method (the surface of the silicon wafer has an 80nm thermal oxide layer, and a silicon oxide nanolayer is deposited on the surface of the thermal oxide layer), and is rapidly heated in an air atmosphere to 850°C, the semi-rapid heating method refers to directly pushing the silicon wafer substrate containing the catalyst layer from room temperature to a chemical vapor deposition furnace with a temperature of 850°C; when the temperature of the silicon wafer substrate containing the catalyst layer reaches 850°C, in air Medium annealing for 3 minutes, then evacuate the air in the furnace, introduce argon gas to restore normal pressure and raise the temperature to 900°C within 2 minutes under 400 sccm argon gas, and keep the constant temperature protection at this temperature for 3 minutes; Certain ethanol vapor (argon ...

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Abstract

The invention relates to the field of direct controllable preparation of metallic single-walled carbon nanotubes, and particularly discloses a method for preferentially growing a metallic single-walled carbon nanotube by using non-metallic silicon oxide as a catalyst. A silicon oxide film is deposited on a silicon substrate with nano silicon oxide thermal oxidization layer by an Ar ion beam deposition method, nucleation and precipitation of nano particles are realized by control on pretreatment conditions, and regulation on particle size and distribution is also realized, finally, the metallic single-walled carbon nanotube with the diameter about 1.2nm is obtained under proper growth conditions, and the content of the metallic single-walled carbon nanotube is more than 80% of the amount of the single-walled carbon nanotubes. In the method provided by the invention, starting from controlling the catalyst on which the single-walled carbon nanotube depends in the nucleation phase, based on the property of high melting point of the non-metallic catalyst, the direct growth of the single-walled carbon nanotube with narrower diameter distribution is realized, the bottleneck of metallic single-walled carbon nanotube control preparation in the present stage is broken, and new knowledge is provided for the nucleation mechanism of the single-walled carbon nanotube with special structure.

Description

technical field [0001] The invention relates to the field of directly controllable preparation of metallic single-walled carbon nanotubes, specifically a method for preferentially growing metallic single-walled carbon nanotubes using non-metallic silicon oxide as a catalyst, by optimizing the pretreatment of non-metallic silicon oxide films Conditions, the preparation of non-metallic nanoparticles with narrow particle size distribution and appropriate size, further regulation of the growth conditions of single-walled carbon nanotubes, and the preferential growth of metallic single-walled carbon nanotubes with narrow diameter distribution. Background technique [0002] Due to the difference between the angles of the graphene sheets constituting the single-walled carbon nanotubes relative to the axial direction and the diameter of the tubes, their conductive properties are metallic and semiconducting, and the former has ultra-high electrical transport due to the quantum transpo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82Y30/00C01B32/159C01B32/162
Inventor 刘畅张莉莉侯鹏翔成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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