6results about How to "No diffusion" patented technology

The present application relates to a kind of full van der waals transfer single crystal dielectric memristor and its preparation method, the single crystal dielectric memristor includes substrate, lower electrode, antimony trioxide dielectric layer and upper electrode from bottom to top;The lower electrode, antimony trioxide dielectric layer and upper electrode form MIM structure.The surface of dielectric layer material of the present application has no dangling bond, reduces the defect with electrode interface;The dielectric material is easy to prepare, maintains higher thickness uniformity;When the dielectric material is deposited on germanium-based graphene, single crystal of out-of-plane 111 orientation is formed, which is beneficial to improve the performance of memristor.The preparation process of the present application is integrated by van der waals force (physical stacking) rather than chemical bonding, which can construct a pure interface theoretically without defects, diffusion and reaction;The process is transferred at room temperature throughout, compatible with flexible substrate, providing a new path for flexible electronics and three-dimensional integration.

This utility model provides a textile roller cleaning device, relating to the technical field of textile roller auxiliary devices. It includes a rotating cleaning roller with a plurality of bristles evenly distributed on its surface. A drive source is fixedly mounted on one side of the cleaning roller to drive its rotation. A cleaning chamber is fixedly mounted at the bottom of the cleaning roller, and a vacuum fan is connected to the cleaning chamber. A cleaning mechanism is also fixedly mounted within the cleaning chamber, comprising a scraper and an air jet pipe. The outer end of the scraper is close to the cleaning roller and abuts against the bristles. The air inlet end of the air jet pipe is connected to an air intake fan, and the outlet end is connected to a nozzle facing the cleaning roller. Through the fitting structure between the densely distributed bristles on the surface of the cleaning roller and the roller grooves, deep removal of accumulated materials is achieved. Simultaneously, the abutment between the scraper and the bristles, along with the directional blowing from the air jet pipe, completes real-time self-cleaning of the bristles. The sealed design of the cleaning chamber, combined with the negative pressure suction of the vacuum fan, ensures that impurities are efficiently collected without diffusion.

The present application relates to a kind of helical solid propellant excavating device, comprising: rack;Feed mechanism for providing feed movement along the axis of the combustion chamber;Helical cutting chip removal mechanism, installed at the execution end of the feed mechanism;Propellant chip recovery system for closed collection of discharged propellant chip;Remote control system.The helical solid propellant excavating device and method provided by the present application, the helical cutting mode is soft and continuous, immediate chip removal avoids accumulation, reduces the risk of friction ignition;Remote operation realizes man-machine isolation;Multi-sensor fusion and automatic fire extinguishing provide active protection.

The invention belongs to the technical field of plant grafting, and particularly relates to an early identification method for healing degree and affinity of fruit tree grafted rootstocks and scions. The early identification method comprises the following steps: grafting a scion to a stock, culturing for 10-20 days, inserting the base part of the stock into a fast green staining solution for staining, and judging the healing degree and affinity according to the staining condition. Different rootstock and scion combinations after grafting are dyed by using the dyeing agent fast green, the transportation difference of the fast green in the grafted rootstock and scion combinations is analyzed, the rootstock and scion healing degree and affinity can be rapidly judged, and technical and theoretical supports are provided for rapid rootstock breeding, rootstock and scion combination screening and rootstock application.

The present invention provides a coil component that is less prone to poor contact between the end of the core wire and the terminal electrode. The wire (21) includes a core wire (29) made of copper or a copper alloy and an insulating film made of resin covering its periphery. The terminal electrode (17) has a nickel-containing layer (33) made of nickel or a nickel alloy that covers the bottom surface of a flange portion, and a tin-containing layer (34) made of tin or a tin alloy located thereon. The end (21a) of the core wire (29) of the wire (21) has a contact surface (37) that contacts the nickel-containing layer (33), a pair of side surfaces (38, 39) extending in a direction from the nickel-containing layer (33), and a top surface (40) opposite to the contact surface (37). The side surfaces (38, 39) of the end (21a) have a region (35) that does not contact the tin-containing layer (34) at least on the top surface (40) side. In this region (35), the copper of the core wire (29) will not diffuse into the tin-containing layer (34), which makes the core wire (29) less likely to become thin.

The application belongs to the field of glass ceramics, and particularly relates to barium boron ultralow-temperature sintering glass ceramics, a preparation method and application thereof. 13 The main crystal phase of the barium boron ultralow-temperature sintering glass ceramics is at least one of BaB8O 13 crystal and BaB2O4 crystal, the glass ceramics is composed of BaO, B2O3 and three oxides after doping K2O, the preparation process is simple, and sintering densification can be completed in an ultralow temperature range of 610-650 DEG C. When tested under a microwave frequency (13-16 GHz), the dielectric constant of the glass ceramics is epsilon r = 5.31-7.05, the quality factor Qxf can reach 38,768 GHz, and the resonance frequency temperature coefficient tau f =-7.44--86.24 ppm / DEG C. The glass ceramics has good chemical compatibility with electrode materials such as aluminum and silver, the co-sintering interface is clear, and there is no element interdiffusion phenomenon, and can be used as a candidate scheme of ULTCC substrate material.