41 results about "Electrical transport" patented technology

The invention provides an n-type Bi-Sb-Se-Te thermoelectric material and a preparation method and application thereof, and belongs to the technical field of thermoelectric materials. The chemical formula of the n-type thermoelectric material is BiySb2-ySe3-xTex, x is larger than or equal to 0.5 and smaller than or equal to 1.75, and y is larger than or equal to 0.5 and smaller than or equal to 1.75. According to the invention, by adjusting the temperature, deformation size, deformation times and the like of thermal deformation, a nano layer sheet with a preferred arrangement direction and a larger surface area is formed in the n-type thermoelectric material, and the nano layer sheet with the preferred arrangement direction and the larger surface area can be formed in the n-type thermoelectric material on the premise of not changing the conduction type of BiySb2-ySe3-xTex, so that the nano layer sheet is textured, and the conductivity of BiySb2-ySe3-xTex is improved. The crystal grain preferred orientation is effectively improved, the electric transport performance is improved, the thermoelectric performance is improved, the conversion efficiency of the thermoelectric device is remarkably improved, and the method has important significance for subsequent design and development of the thermoelectric device.

This invention discloses a method and device structure for improving the electrical transport properties of etched graphene quantum dots, belonging to the field of low-temperature transport testing technology. The method includes the following steps: fabricating etched graphene quantum dot devices; performing preliminary electrical transport characterization by cooling; and undergoing several cycles of "sample electrode grounding protection – heating to above 200K or room temperature – cooling again – electrical transport characterization" to improve the electrical transport properties of the device, enabling subsequent observation and manipulation of the quantum dot's fine charge stability map. The optimized method of this invention, through several heating and cooling thermal cycles, successfully adjusts the coulomb blocking region of the graphene quantum dots from hundreds of volts towards zero, facilitating the application of a gate voltage. Furthermore, the charge stability map of the two quantum dots is significantly optimized and improved, greatly increasing the yield of etched graphene quantum dot devices. In addition, the optimized method of this invention is simple to operate and has significant effects, making it suitable for widespread application.

The present invention provides a developing device and printer. In the developing device, a power element drives a developing element and a developer input element to rotate in the same direction, with the developing element rotating at a faster speed than the developer input element. A first electrical output end of an electrical transport element is electrically connected to the developer input element, and a second electrical output end is electrically connected to the developer output element. During the first rotation of the developing element, the outer peripheral surface of the developing element is electrically connected to the developer transported by the developer input element to form a first electrical connection point, and the outer peripheral surface of the developing element is electrically connected to the developer output element to form a second electrical connection point. The first electrical connection point and the second electrical connection point intersect a line connecting the center of the developing element to form an acute angle β, and the outer peripheral surface of the developing element has a higher potential than the developer input element. This developing device has an ingenious structural arrangement, saves material costs, achieves energy conservation and environmental protection, and ensures uniform and stable electrical distribution on the outer peripheral surface of the developing element, resulting in good printing quality.

The invention discloses a few-layer graphene band gap and photoelectric characteristic regulation and control method, and relates to the technical field of photoelectrons. The regulation and control method comprises the following steps: placing a to-be-detected few-layer graphene sample in a diamond anvil cell, and applying pressure to the to-be-detected few-layer graphene sample under a quasi-hydrostatic pressure condition through the diamond anvil cell; carrying out in-situ Raman spectrum detection in the pressure loading process, and judging the structural evolution of the to-be-detected few-layer graphene sample based on an in-situ Raman spectrum; and testing the photocurrent response and the electrical transport performance change of the to-be-tested few-layer graphene sample under an illumination condition to obtain pressure-related photoelectric performance parameters. According to the method, the electronic band gap of the few-layer graphene is effectively opened by utilizing a high-pressure means, and the high-pressure regulation and control means is physical regulation and control, so that impurities or chemical modification is not needed, the process is simple, and the controllability is high.

This invention discloses a method and system for screening high-performance layered nitride thermoelectric materials, comprising: obtaining a series of crystal structures of initial layered nitrides; performing magnetic tests on the materials using first-principles calculations to select non-magnetic materials; optimizing the structure of non-magnetic materials, and after calculation convergence, performing static calculations and electronic band structure calculations to select materials with a band gap range of 0.1~3 eV and high band structure degeneracy; calculating the partial charge density of the materials to determine whether there is a two-dimensional electron gas, i.e., alternating conductive and insulating layers; determining stability by performing phonon spectrum and molecular dynamics simulations on the materials to select materials with no imaginary frequencies in the phonon spectrum and stable dynamics; calculating the thermal transport properties of the materials, obtaining the lattice thermal conductivity and Green'sson parameters, and searching for materials with strong anharmonicity; and finally performing electrical transport calculations to obtain the ZT value of the materials.

The application belongs to the technical field of thermoelectric device preparation and connectors, and aims to solve the problem of Te 0.985 Sb 0.015 During the connection of thermoelectric materials and Ni electrodes, a large number of aggregated pores and segregation of doped elements Sb are generated at the interface, which seriously weakens the electrical transport performance and thermal stability at the interface. A method for improving the performance and thermal stability of Te-based thermoelectric arms by using topological dense packing is provided. A topological dense packing NiTe 2‑x , 0≤ x ≤0.9 is synthesized by a solid phase reaction method, which is introduced into the Ni and Te 0.985 Sb 0.015 between them to form a Ni / NiTe 2‑x / Te 0.985 Sb 0.015 / NiTe 2‑x / Ni gradient connection structure. The problem of a large number of aggregated pores and segregation of doped elements Sb due to the severe diffusion of Ni into Te 0.985 Sb 0.015 and reaction at the interface is successfully eliminated, and the performance and service life of the thermoelectric connector are improved.

The invention discloses a copper ion intercalation two-dimensional beta-phase indium selenide material as well as a preparation method and application thereof. The method comprises the following steps: soaking a substrate loaded with a beta-InSe nanosheet in an organic solution of copper hexafluorophosphate tetraacetonitrile with the pH value of 4.0-6.5, and preparing the copper ion intercalation two-dimensional beta-InSe material through a solution heating and soaking method. According to the copper ion intercalation two-dimensional beta-phase indium selenide material and the preparation method thereof, a mild and efficient copper ion solution intercalation process is adopted, highly uniform and ordered distribution of copper between two-dimensional beta-InSe layers is achieved, the ferroelectric property and the electrical transport property of the copper ion intercalation two-dimensional beta-phase indium selenide material are regulated and controlled at the same time, and the prepared copper ion intercalation two-dimensional beta-phase indium selenide material is suitable for constructing a high-performance ferroelectric device.

The invention relates to the technical field of thermoelectric materials, and discloses a method for improving thermoelectric performance of a tin selenide block material, which comprises the following steps of: 1, mixing Sn powder and Se powder according to a stoichiometric ratio, and adding Na2S and Li2S as codopants; 2, the mixed raw material is subjected to vacuum sealing treatment and then subjected to solid-phase melting reaction treatment, and a tin selenide cast ingot is obtained; step 3, carrying out ball-milling refining on the molten product to obtain tin selenide powder; and 4, carrying out spark plasma sintering on the tin selenide powder, and applying pulse current in the sintering process to obtain the tin selenide block material. By introducing alkali metal sulfides Na2S and Li2S, the solid solubility of alkali metal in a tin selenide matrix can be remarkably improved, so that the electrical transport performance and thermoelectric performance of the tin selenide material are improved.

This invention provides a molecular device based on weak supramolecular interactions. The molecular device comprises a substrate electrode, a needle electrode, and a single supramolecular element between the two electrodes. The single supramolecular element consists of two model molecules with interchangeable π–π stacking and hydrogen bonding interactions. The molecular device provided by this invention exhibits stable performance and a high on / off ratio. It requires no external stimuli or the participation of other auxiliary molecules. Reversible switching of the electrical transport mode can be achieved by repeatedly stretching and compressing the needle electrode to change the spacing between the model molecules within the single supramolecular element. The device maintains stable lifetime and on / off state switching even at relatively high oscillation frequencies.

The invention discloses a simulation analysis method and device for propagation characteristics of guided waves in an iced conductor, and belongs to the technical field of icing and deicing of power transmission lines. The method comprises the following steps of: adding an icing layer model by taking an iced power transmission conductor which is relatively common in power transmission as a research object to obtain an iced power transmission conductor model; establishing an annular amplitude variation device model on the surface of the ice-coated transmission conductor model and setting a domain point probe, wherein the annular amplitude variation device model is used for applying an acting force in the ice-coated transmission conductor model to generate ultrasonic guided waves; simulation analysis is carried out on propagation characteristics of ultrasonic guided waves in the iced conductor in different excitation loading modes through a finite element method, attenuation characteristics of the guided waves in the iced transmission conductor are obtained, and the theoretical effect of ultrasonic deicing of the transmission conductor under different excitation frequencies and different excitation loading modes is tested. And the ultrasonic deicing operation of the transmission conductor in reality is guided. According to the invention, the deicing efficiency can be greatly improved.

The invention provides a material with a complete magnetic compensation effect and high longitudinal spin polarization and a preparation method and application thereof, the chemical formula of the material is Mn2-aVaFe1-bXbGa1-cYc, X is selected from one or more of Cu, Ni, Co, Cr and Ti, and Y is selected from one or more of Al, Ge, In, Si, Pb, Sb and Sn. The material provided by the invention has high longitudinal spin polarization, high spin polarization and a complete compensation effect, and is a series of magnetic semi-metal Heusler materials substituted by different elements; the Curie temperature, the magnetic compensation temperature, the longitudinal electric transport property, the Hall parameter and other performances of the material can be optimized and continuously adjustable through regulation and control of mechanisms such as components and temperature, and the material has a complete compensation effect. Therefore, the material has wide application prospects in spin polarization injection, magnetic sensors, field-effect tubes, magnetic random memories and other spintronics devices.

The invention discloses an argon ion beam etching method for an REBCO superconducting thick film micro-bridge structure, and belongs to the technical field of high-temperature superconducting. The method comprises the following steps: firstly, spin-coating AZ series photoresist with the thickness of about 3-6 microns on the surface of a silver layer, and optimizing exposure and development conditions to obtain a stable graphical mask; the sample is placed in an argon ion beam etching system, a vertical incidence mode is adopted, the ion energy is controlled to be 400-500 eV, the ion beam current is 90 ma, the neutralizing current is 1-1.3 times that of the ion beam current, the argon pressure is 1.8 * 10 <-2 >-2.2 * 10 <-2 >, and the sample is subjected to water cooling at the temperature of 10 DEG C and rotated. Etching of the silver layer and the thick REBCO layer is completed at the speed of about 1 micron of the REBCO layer per hour, and finally the micro-bridge structure with the clear pattern edge and the no-damage film layer is formed. The method has the advantages of large etching depth, high pattern fidelity, small influence on superconducting performance and the like, and is suitable for electrical transport performance test and device application.

The application discloses an electric transport testing device and method for in-situ phase change detection, and mainly relates to the technical field of material in-situ characterization and electric transport measurement. The device comprises a sample stage, a circuit board, a temperature control module and a signal acquisition circuit. The sample stage adopts a T-shaped structure as a whole, screw fixing holes are arranged on the lateral sides of the upper transverse area of the sample stage, and the sample stage is used for mechanical fixation with a sample rod. A plurality of threaded holes are arranged on the left and right sides of the sample stage to adapt to the installation requirements of circuit boards with different lengths. The application has the beneficial effects that the resistivity continuous acquisition and the fixed-point Hall measurement function are integrated in the same testing platform, the R-T curve and the Hall parameter-temperature relationship can be obtained simultaneously in one temperature change process without replacing the sample or re-wiring. Through comprehensive analysis of the resistivity change, the Hall coefficient change and the abnormal Hall magnetic response characteristics, the phase transition temperature, the phase transition type and the electronic structure evolution in the phase transition process of the material can be comprehensively determined from the electric transport angle.

This invention discloses a non-destructive testing system and method for defects in superconducting materials based on thermoelectric electromotive force (TEMF), belonging to the field of non-destructive testing technology for superconducting materials. This method introduces a controllable temperature gradient along the length of a practical superconducting material and monitors the changes in thermoelectric electromotive force generated at both ends or in localized areas of the superconducting material in real time. Utilizing the anomalous response of the electrical transport characteristics of the defect region near the critical temperature, it achieves rapid and non-destructive identification and location of internal defects in the superconducting material. This method does not require disassembly of the superconducting material or application of large currents, and is applicable to various practical superconducting materials such as tapes, wires, and armored cables. It has advantages such as high detection sensitivity, low implementation cost, simple operation, and scalability to online detection.

This application provides a testing device, assembly method, and electrical performance testing method for two-dimensional devices based on a diamond anvil cell, belonging to the field of high-voltage electrical transport measurement technology for two-dimensional materials. The two-dimensional device testing device includes a diamond anvil cell, a metal pad, an insulating part, and a two-dimensional device. The insulating part includes a first insulating part and a second insulating part. Second through holes are formed in the areas corresponding to the first through hole in both the first and second insulating parts. The inner walls of the two second through holes, the upper surface of the lower diamond anvil cell, and the lower surface of the upper diamond anvil cell together form a sample cavity. The two-dimensional device is housed within the sample cavity. The two-dimensional device includes a bottom grid, a first dielectric layer, an in-plane Hall electrode, a two-dimensional material, a second dielectric layer, and a top grid, stacked sequentially. This testing device can simultaneously control the grid voltage and pressure, thereby achieving the measurement of the electromagnetic transport characteristics of the two-dimensional material under the synergistic effect of the grid voltage and pressure.

The invention relates to a theoretical calculation method for regulating and controlling a ZrNiSn electronic structure through Ni gap doping. According to the method, based on calculation of a first principle, ZrNiSn structure models with different 4d-bit Ni doping concentrations are constructed, and the models are optimized and subjected to electronic structure calculation, so that a theoretical calculation method for systematically analyzing the influence of the doping concentration and the temperature effect on the electronic structure of the ZrNiSn material is formed. The calculation method provided by the invention not only has higher theoretical universality and cross-scale capability, but also remarkably improves the accurate prediction capability of a doping concentration critical point, an impurity state delocalization process and an electron transport mechanism evolution path; and on the basis of maintaining high-precision calculation, a material combination which is high in structural stability, excellent in electric transport performance and suitable for a thermoelectric scene can be rapidly screened out, and the theoretical discovery and structural design efficiency of a high-performance thermoelectric material is effectively improved.

The invention discloses a method for improving the electrical transport characteristic of etched graphene quantum dots and a device structure, and belongs to the technical field of low-temperature transport testing. The method comprises the following steps: manufacturing an etched graphene quantum dot device; carrying out preliminary electric transportation characterization by cooling; through several times of circular processing of sample electrode grounding protection-heating to more than 200K or room temperature-re-cooling-electrical transport characterization, the electrical transport property of the device is improved, and subsequent quantum dot fine charge stability diagram observation and control can be carried out. According to the optimization method, the coulomb blocking interval of the graphene quantum dots is successfully and gradually adjusted to the zero point from hundred volts through multiple times of temperature rising and falling thermal cycle treatment, grid voltage is conveniently applied, the double-quantum-dot charge stability diagram is obviously optimized and improved, and the yield of etched graphene quantum dot devices is greatly improved. In addition, the optimization method is easy to operate, obvious in effect and suitable for popularization.

The invention discloses an in-situ electric transport and quantum magnetics collaborative characterization system, and relates to the technical field of material physical property measurement under extreme conditions, the system comprises a multi-physics field coupling module, the multi-physics field coupling module comprises an extreme pressure device, a vector superconducting magnet and a low-temperature constant-temperature device, the extreme pressure device comprises a diamond anvil cell, and the vector superconducting magnet comprises a quantum magnetic field; comprising a nitrogen vacancy color center, an electrical probe and a microstrip transmission line, the cooperative detection module comprises a magnetic detection terminal and an electrical detection terminal and is used for detecting a magnetic signal of the sample to be detected and performing in-situ measurement so as to characterize the electrical transport property; and the position adjustment and vibration isolation module comprises a vibration isolation platform, and the extreme pressure device and the magnetic detection terminal are jointly rigidly fixed on the vibration isolation platform so as to ensure the alignment stability of the micron-sized optical path. According to the invention, the submicron-level optical alignment stability can be realized while accurate loading in a low-temperature, high-intensity magnetic field and high-pressure environment can be ensured, so that the isotactic in-situ electric-magnetic collaborative data with a high signal-to-noise ratio can be obtained.

The application relates to a photothermal selective absorber based on a Bi2Se3 / SiO2 alternating multilayer film, which belongs to the field of solar energy applications. The bottom layer is a metal substrate, the thickness of the substrate should be greater than the skin depth of incident light in the metal, which will ensure that the incident light cannot be transmitted after entering the coating; the SiO2 thin film and the Bi2Se3 thin film with different thicknesses are arranged alternately on the metal substrate to form an impedance matching control layer, the refractive index and the extinction coefficient of the Bi2Se3 / SiO2 alternating multilayer film are controlled through the thickness; the top layer of the Bi2Se3 thin film is a blackbody thermal radiation control function layer, the thermal radiation frequency domain is adjusted to the metal reflection region of the thin film through the thickness adjustment. The electrodes are increased at both ends of the top layer of the Bi2Se3 thin film to apply voltage, the electrical transport characteristics of each layer film are controlled through the voltage, which will change the refractive index and the extinction coefficient of the Bi2Se3 thin film, so as to adjust the equivalent impedance of different incident angles, and ensure that the Bi2Se3 / SiO2 alternating multilayer film always maintains the overall equivalent impedance matching state under each incident angle.

The invention relates to a high-performance bismuth telluride-based thermoelectric material and a preparation method thereof. According to the method, a preformed blank is subjected to a multi-stage thermal deformation process, specifically, first-stage thermal extrusion is conducted at the temperature of 430-530 DEG C and the medium extrusion ratio, and densification and texturing are preliminarily completed; then, second-stage hot extrusion is immediately carried out at the temperature of 350-450 DEG C under the high extrusion ratio, and high-density dislocation is introduced through violent plastic deformation; and in the third stage, equal-channel angular pressing can be adopted for subsequent shear deformation, so that the dislocation density is further increased, and grains are refined. By accurately controlling the time sequence and strength of a thermal field and a shear force field, a multi-mode defect structure from a nano precipitated phase and a crystal boundary in-place error network is cooperatively constructed in the material, and full-spectrum scattering of phonons is realized, so that the crystal lattice thermal conductivity is remarkably reduced while good electric transport performance is kept.

The invention relates to the field of thermoelectric materials and semiconductor refrigeration, and discloses a thermoelectric refrigeration material based on a P-type diamond-like carbon-based Cu3SbSe4 crystal and a preparation method of the thermoelectric refrigeration material, the material is an Ag solid solution P-type Cu3SbSe4 crystal material, and the molar ratio of Cu to Ag to Sb to Se is (3-x): x: 1: 4; wherein x is more than or equal to 0.03 and less than or equal to 0.24, and a Bridgman method is adopted. The compact Cu3SbSe4 crystal material is successfully prepared by a method of firstly adjusting a slow cooling temperature zone by optimizing a preparation process and then filling nitrogen to adjust pressure. And the crystal quality and mobility are improved through solid solution Ag, meanwhile, the carrier concentration of the material is maintained, and finally the electrical transport performance of the material is optimized. The P-type Cu3SbSe4 crystal provided by the invention has the advantages of rich source materials, low price, high mechanical strength and the like, a thermoelectric refrigeration device constructed by the P-type Cu3SbSe4 crystal realizes an effective refrigeration effect, and the diamond-like thermoelectric material Cu3SbSe4 has a great potential of becoming a thermoelectric refrigeration material.

The invention discloses a method for predicting the electrical transport property of an MXene-MSi2N4 heterojunction based on theoretical calculation. Belongs to the technical field of electronic devices and comprises the following operation steps that a material database is screened, MXene and MSi2N4 models are built respectively, VASP calculated based on the density functional theory is adopted to calculate work functions of MXene and MSi2N4 of different functionalizations, and preliminary screening of heterojunction materials is carried out; an MXene-MSi2N4 heterojunction structure is constructed, and the property of a contact interface is explored based on VASP software; screening heterojunctions with stable thermodynamics, longitudinal ohmic contact and good tunneling performance for next calculation; a two-dimensional double-gate field effect transistor device model is built based on the screened MXene-MSi2N4 heterojunction, the electric transport properties including a zero-bias transmission spectrum, projection local state density and contact resistance are calculated by using Quantum ATK, and the optimal device model is screened. According to the invention, the electric contact material with excellent performance is effectively predicted through a theoretical calculation method, and the two-dimensional field effect transistor component with low contact resistance and full ohmic contact is realized.

The application discloses a novel electrode preparation and wiring process combining indium compression contact and hot air welding method, and relates to the technical field of condensed state physics and material engineering. The application comprises the following steps: S1: processing a millimeter-level bulk phase material sample to be measured into a regular long strip-shaped Hallbar structure for electrical transport measurement, and performing cleaning treatment on the surface of the processed sample. The application cooperates indium compression contact and hot air welding, relies on the good ductility and low resistance characteristics of high-purity indium, forms a gap-free ohmic contact between indium and the surface of the millimeter-level bulk phase sample under constant pressure at room temperature, simultaneously utilizes the low melting point characteristics of Sn-Bi series low-temperature soldering paste, forms a metallurgical bonding solder joint structure between the metal wire and the indium electrode through a precise temperature control hot air welding process, and forms a mutual melting diffusion layer, which effectively solves the problem of loose contact. Compared with a single contact mode, the application not only retains the advantage of small thermal damage of the indium compression method to the sample, but also has high mechanical stability of the welding connection.

This invention relates to the field of thermoelectric materials technology, and discloses a bismuth telluride-based thermoelectric material, its preparation method, and its applications. It includes a matrix and a dopant material; the matrix is ​​bismuth telluride; the dopant material is selected from binary compound materials. The thermoelectric material of this application improves electrical transport performance and increases the power factor by incorporating binary compound materials into the matrix material and combining zone melting, ultrasonic exfoliation, and hot-pressing sintering processes. It also introduces numerous dislocations, grain boundaries, and other defects to effectively reduce lattice thermal conductivity and optimize thermoelectric performance; simultaneously, it significantly improves the Vickers hardness of the bismuth telluride-based thermoelectric material.

The invention discloses a method for improving the thermoelectric performance of a bismuth telluride-based material, and the method comprises the steps: carrying out the vertical angular extrusion of a bismuth telluride-based ingot material, so as to improve the thermoelectric performance; the vertical corner extrusion is realized by adopting a vertical corner extrusion die, an inner cavity of the die is sequentially composed of a feeding area, a reducing area and an extrusion area which are communicated with one another, the feeding area is a longitudinally arranged cylinder, the extrusion area is a transversely arranged cuboid, and the feeding area is communicated with the extrusion area through the reducing area; the vertical corner extrusion precursor vertically enters the vertical corner extrusion die, and is extruded in the horizontal direction after being subjected to vertical corner extrusion. According to the method, directional arrangement and refinement of crystal grains in the bismuth telluride-based material are promoted through the vertical angular pressing process, the electrical transport performance of the material is remarkably improved through the process, meanwhile, the heat conductivity of the material is effectively reduced by enhancing the grain boundary scattering effect and introducing a defect structure, and finally the thermoelectric performance of the material is greatly optimized.

The invention belongs to the technical field of energy materials, and discloses a bismuth telluride-based thermoelectric material, which has the following general formula: Bi < 0.4 > Sb < 1.6-x-y > Ga < x > Cu < y > Te < 3 >, 0 < x < = 0.1, and 0 < y < = 0.0125. The invention also provides a preparation method which comprises the following steps: step 1, mixing a Bi source, an Sb source, a Ga source, a Te source and a Cu source, sealing a tube in vacuum, melting at high temperature, and carrying out water quenching to obtain a bismuth telluride-based cast ingot; 2, grinding the bismuth telluride-based cast ingot into fine powder, and performing hot pressed sintering to obtain a P-type bismuth telluride block material; and step 3, texturing the P-type bismuth telluride block material to obtain the bismuth telluride-based thermoelectric material. The bismuth telluride-based thermoelectric material has excellent thermoelectric performance, the carrier mobility is effectively enhanced and the lattice thermal conductivity is reduced through the Ga and Cu double-doped synergistic effect and texturing treatment, so that the coupling relation between the electrical transport performance and the thermal performance is decoupled, and the thermoelectric performance of the bismuth telluride-based thermoelectric material is improved.

The invention discloses a diamond anvil cell-based two-dimensional device electric transport test structure and a test method thereof. The test structure comprises a diamond anvil cell high-voltage device, a two-dimensional device transfer device and a micro-nano electrode preparation and transfer device, the two-dimensional device transfer device comprises a two-dimensional device mechanism and a device transfer mechanism; the two-dimensional device mechanism comprises a silicon oxide substrate and a two-dimensional device prepared on the silicon oxide substrate; the device transfer mechanism comprises a glass sheet, a device PDMS layer and a device PPC layer which are arranged layer by layer; the micro-nano electrode transfer device comprises a micro-nano electrode substrate, an electrode PDMS layer, an electrode PPC layer and a micro-nano electrode which are arranged layer by layer; and the prepared two-dimensional device and the micro-nano electrode are neatly and nondestructively transferred to the upper anvil surface of the diamond anvil cell by utilizing a transfer technology, so that the in-situ high-voltage electric transport measurement can be carried out on the two-dimensional device under high voltage.

This invention relates to the field of two-dimensional materials, and particularly to a method for preparing a two-dimensional material with interlayer vertical electrical transport channels. The steps are as follows: creating a supersaturated environment for the first intrinsic principal atoms in a gaseous state, while simultaneously placing the second intrinsic principal atoms in an unsaturated state; introducing a vertical p-type electrical transport channel into the gas flow path. z The doping source of the valence electron orbital replaces the unsaturated second intrinsic principal atom, and the doping source interacts with the p-type of the saturated first intrinsic principal atom. z The orbitals undergo strong coupling hybridization, activating the p-axis of the saturated first intrinsic principal atom. z The vertical extension of the track forms an interlayer vertical electrical transport channel. This invention features a simple process, good compatibility with current micro / nano fabrication technologies, high yield, excellent film quality, and stable vertical conductive channels at room temperature. It also offers strong reusability and can expand the application of two-dimensional materials, especially two-dimensional semiconductor materials, in novel vertical structure electronic devices.

The invention discloses a method for inducing the superconductivity of a perovskite type iridium oxide epitaxial thin film, which comprises the following steps: growing an iridium oxide epitaxial thin film on a substrate by using a pulse laser method, the general formula of the material of the iridium oxide thin film being Srn + 1IrnO3n + 1 (n = 1, 2, and infinity); and carrying out He ion implantation on the prepared iridium oxide film. And testing the electrical transport characteristic and the magnetic characteristic of the injected sample, and judging that the ion injected sample has the superconducting characteristic according to the test result that the resistance of the electrical transport characteristic is suddenly reduced at low temperature and the magnetic characteristic shows diamagnetism within the same low temperature range. The iridium oxide epitaxial thin film is prepared through a pulse laser method, the helium ion implantation technology is combined, the electronic structure is regulated and controlled, and the superconducting characteristic is successfully induced. According to the method, potential safety hazards of a traditional chemical reduction method are abandoned, the technological process is simplified, and technical support is provided for industrial application of the oxide superconducting thin film.

The present invention discloses an N-type Bi-Te-Se-based thermoelectric thin film and a preparation method thereof. The preparation method includes the steps of: preparing a Bi2Te y thin film by magnetron sputtering, wherein 2.5 ≤ y ≤ 3.5; preparing a Se thin film by thermal evaporation; laminating the Bi2Te y thin film and the Se thin film and performing heat treatment to sublime Se in the Se thin film and diffuse it into the Bi2Te y thin film to obtain an N-type Bi-Te-Se-based thermoelectric thin film. In the present invention, the Bi2Te y thin film prepared by magnetron sputtering has good quality and uniform composition. The Se thin film prepared by thermal evaporation has a lower density, which is more conducive to subsequent sublimation and diffusion. By using magnetron sputtering and thermal evaporation in combination, uniform doping of Se, Se doping and heat treatment are carried out simultaneously, avoiding the loss of Te and Se, and no defects are generated. An N-type Bi-Te-Se-based thermoelectric thin film with controllable and uniform composition and high electrical transport performance is prepared. The N-type Bi-Te-Se-based thermoelectric thin film in the present invention has high quality, good thermoelectric performance and good repeatability, and can be produced in large areas.