Manganite epitaxial thin film and preparation method thereof

A technology of manganese oxide and epitaxial thin film, which is applied in the field of material science, can solve problems such as cracks on the surface of the thin film, and achieve the effects of small roughness, good giant magnetoresistance effect, and cheap raw materials

Inactive Publication Date: 2014-05-07
EAST CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, although the chemical solution method has been used to prepare manganese oxide films, its precursors basically use metal alkoxides (more toxic) or nitrates (oxides that release nitrogen when heated and decomposed) as solutes, metha

Method used

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  • Manganite epitaxial thin film and preparation method thereof
  • Manganite epitaxial thin film and preparation method thereof
  • Manganite epitaxial thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0029] The preparation of embodiment 1 manganese oxide epitaxial film

[0030] A. Preparation of precursor solution

[0031] Weigh 0.00525mol of lanthanum acetate, 0.00225mol of strontium acetate and 0.0075mol of manganese acetate, add 40ml of acetic acid and 10ml of water, heat to reflux to dissolve the solute completely, and obtain a transparent orange-yellow solution; Microporous membrane filtration to obtain stable lanthanum strontium manganese oxide (La 0.7 Sr 0.3 MnO 3 ) precursor solution;

[0032] B. Preparation of epitaxial thin film

[0033] Add the prepared LSMO precursor solution dropwise to the cleaned SrTiO 3 On the substrate, three kinds of sample substrate crystal orientations (100), (110), (111), the rotation speed of the substrate is 5000 rpm, and keep for 30 seconds to obtain a layer of lanthanum strontium manganese oxide gel film; In an annealing furnace, heat at 200°C for 3 minutes, then pyrolyze at 400°C for 3 minutes, and finally anneal at 800°C for ...

Embodiment 2

[0034] Performance characterization of embodiment 2 manganese oxide epitaxial film

[0035] Various properties of the manganese oxide epitaxial film prepared in Example 1, ie, the LSMO film, were tested.

[0036] (1) Microstructure

[0037] X-ray diffraction is the diffraction effect caused by the interference of X-rays incident into the sample and the crystal lattice, and is used to characterize the crystallization properties of materials. 2θ~ω scanning is a typical scanning method of high-resolution scanning, which can remove the influence of the oblique section of the substrate on the test results; Φ scanning reflects the symmetry of the crystal in the horizontal direction, and then characterizes its epitaxy degree. The X-ray diffractometer used in this embodiment is the D8Discover high-resolution diffractometer of Bruker Company. The working voltage and current are 40kV×40mA, and the incident X-rays are Kα radiation produced by Cu targets, with a wavelength of 0.15406nm. ...

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Abstract

The invention discloses a manganite epitaxial thin film. The manganite epitaxial thin film is of a layered structure and comprises a single crystal basal layer and a manganite epitaxial thin film layer growing on the single crystal basal layer in a stacking manner. The invention aslo discloses a method for preparing the manganite epitaxial thin film by adopting a chemical solution approach. The adjustment of physical properties such as ferromagnetic/paramagnetic curie temperature and electrical transport property of the manganite epitaxial thin film is realized by adjustment of the components. The manganite epitaxial thin film has ferromagnetic property and electrical transport and colossal magnetoresistance effects, is compatible with a semiconductor integrated circuit technology and has wide application prospect in information industries such as magnetoresistance sensors and magnetic memory materials. The preparation method is simple to operate and low in cost; the manganite epitaxial thin film is good in repeatability and suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of material science and technology, in particular to a manganese oxide epitaxial film and a preparation method thereof, belonging to the field of material science and technology. Background technique [0002] Lanthanum strontium manganese oxide and other perovskite manganese oxides (La 1-x Re x MnO 3 , A=Sr, Ca, Ba, etc.), due to its rich physical properties such as huge magnetoresistance effect and magnetostriction effect, it has great potential application value in magnetic storage devices, magnetic sensor devices, spin valves, etc. The system is also a strongly correlated system with highly correlated degrees of freedom of charge, spin, lattice, and orbit. It contains very rich physical content and is a research hotspot in theoretical research and device application of condensed matter physics. Colossal Magnetoresistance effect (Colossal Magnetoresistance effect) means that under the action of an external magnet...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B29/68C30B19/12C30B33/02
Inventor 张媛媛唐晓东白伟杨静曹丹艳任卿
Owner EAST CHINA NORMAL UNIVERSITY
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