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38results about How to "Room temperature ferromagnetic" patented technology
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Method for preparing bismuth ferrite based multifunctioanl oxide ceramic material
InactiveCN101050120ARoom temperature ferromagneticInhibition of price changeRare-earth elementOxide ceramic
This invention relates to a method for preparing BiFeO3-based multifunctional oxide ceramic. The method comprises: (1) pre-pressing BLTFO8 powder into a disc, loading oxide protective powder (Al2O3, CeO2, ZrO2 or FeO) into a graphite mold, and pressing; (2) transferring the BLTFO8 disc onto the oxide protective powder layer in the mold; (3) continuing adding oxide protective powder into the mold to embed the BLTFO8 disc, and pressing; (4) transferring the mold into an SPS sintering furnace, heating to 600 deg.C within 3 min, then heating to the sintering temperature at a rate of 50 deg.C / min, keeping the temperature, and sintering. Since BiFeO3 has G-type antiferromagnetic structure, doping with rare earth element such as La or Tb, or metal element such as Ba or K can alter its antiferromagnetic structure, and the obtained BiFeO3-based multifunctional oxide ceramic has ferromagnetism at room temperature. The method can inhibit the valency change of the elements and reduce loss, and the BiFeO3-based multifunctional oxide ceramic has good ferroelectric and ferromagnetic properties at room temperature.
Owner:TSINGHUA UNIV
Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film
InactiveCN101736303AChoose simpleIncrease usageVacuum evaporation coatingSputtering coatingUltra-high vacuumTitanium nitride
The invention relates to a preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film. An ultrahigh vacuum facing target magnetron sputtering coating machine is adopted, a pair of Ti targets of which the purity is 99.99% is installed on an opposite target head, and a Cr sheet is put on the surface of the Ti target; facing target magnetron sputtering equipment is started to successively start a first-stage mechanical pump and a second-stage molecular pump for vacuumizing until the back vacuum degree of a sputtering chamber is 2*10-4 Pa; mixed gas of Ar and N2 is led into the vacuum chamber to keep the vacuum degree to 1 Pa; a sputtering power supply is started to apply 0.3A of current and about 500V of DC voltage on a pair of Ti targets to cause sputtering current and voltage to be stable; after sputtering, the sputtering gas Ar and N2 are stopped to be led in, a gate valve is totally opened to continue vacuumizing, and the vacuum system is closed; the vacuum chamber is opened to take out the sample. Compared with Cr-doped TiN films prepared with other methods, the film prepared with the invention has room temperature ferromagnetism; the adopted method is simple and practical and is favorable for popularizing in industrial production.
Owner:TIANJIN UNIV
Ga2o3/(Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof
ActiveCN105845824AThe equipment is simple and commonGood for promotionGalvano-magnetic material selectionGalvano-magnetic device manufacture/treatmentMolecular beamMetal
The invention discloses a Ga2o3 / (Ga1-xFex)2o3 film with room temperature ferromagnetism and high ultraviolet light permeation function and the manufacturing method thereof. The film is provided with room temperature ferromagnetism, a high penetration rate in deep ultraviolet zones and the ability for high energy photons to penetrate. The film can be used in researches on the mutual effect of high energy photon spinning and electron spinning. The manufacturing method for the film is performed as follows: using a c face sapphire as a substrate; conducting cycle deposition for a plurality of times to a Ga2o3 thin layer and a transitional metal Fe thin layer through a laser molecular beam epitaxial technology, and achieving a multi-layer film of Ga2o3 / (Ga1-xFex)2o3 doped with transitional metal elements through the heat diffusion among the layers. The manufacturing method for the multi-layer film enables a Ga2o3 / (Ga1-xFex)2o3 film to be doped by different amounts of Fe by adjusting the times for laser pulse of a Fe deposition layer. The entire process is done in the same cavity so the purity of a sample is guaranteed. Further, since the equipment is commonplace, it can be conveniently promoted for wide use. The Ga2o3 / (Ga1-xFex)2o3 film manufactured by the invention is a diluted magnetic semiconductor material with great prospects for future use.
Owner:北京镓创科技有限公司
Method for preparing Fe doped ZnO room-temperature diluted magnetic semiconductor material
InactiveCN101224904ARoom temperature ferromagneticSimple processZinc oxides/hydroxidesMagnetic semiconductorRoom temperature
The invention provides a method for preparing a Fe-doped ZnO room temperature diluted magnetic semiconductor material, which adopts a coprecipitation method and includes: A. prepare a mixed solution of Fe<3+> and Zn<2+> and a NaOH solution; B. mix the mixed solution of Fe<3+> and Zn<2+> and the NaOH solution to form a precipitate, then filter, separate and wash the precipitate; C. dry, pre-sinter, grind, tablet and sinter the precipitate to obtain the Fe-doped ZnO room temperature diluted magnetic semiconductor material. The invention provides a completely new method for preparing the Fe-doped ZnO room temperature diluted magnetic semiconductor material and the Fe-doped ZnO room temperature diluted magnetic semiconductor material prepared by the method has room temperature ferromagnetism.
Owner:HUAZHONG UNIV OF SCI & TECH
Method for preparing room-temperature ferromagnetic Fe doped ZnO nanometer wire
InactiveCN101311365ASave raw materialsSimple processPolycrystalline material growthFrom chemically reactive gasesTube furnaceZno nanowires
The invention discloses a method for preparing a ZnO nanowire with an adulteration of ferromagnetic Fe under a room temperature, which belongs to the field of semiconductor nanometer material preparation technology; a method of vapor deposition is adopted by the invention to carry out an original position adulteration in the process of preparing the ZnO nanowire; ZnO, C, and Fe powder are provided as evaporation sources, silicon chip is provided as a receiving lining which is placed on a corundum boat and positioned right above the evaporation and has a vertical distance of 2-4mm with the evaporation source. Then, all materials are put in a pipe typed stove where 300-350 ml / min argon is inlet; after 5-8 min, flow rate of the argon is changed to 120-160ml / min; the pipe typed stove is heated to a temperature of 950-1050 DEG C, with an internal pressure of the stove maintained at 0.03-0.05Mpa; heat preservation for 140-160 min, the stove is naturally cooled to the room temperature, thus obtaining the large scale of well distributed ZnO nanowire with the adulteration of Fe. The method solves the problem of reasonably adulterating magnetic element Fe to the ZnO nanowire; the obtained ZnO nanowire with the adulteration of ferromagnetic Fe has ferromagnetism under a room temperature. The method has the advantages that the raw materials are cheap; the technique is simple; the energy consumption is low; the productivity is high; the product is pollution free to the environment and is applicable to an industrialized production.
Owner:UNIV OF SCI & TECH BEIJING
Method of preparing zinc oxide doped ambient temperature diluted magnetic semi-conducting material
InactiveCN101016164ANot ferromagnetic at room temperatureRoom temperature ferromagneticZinc oxides/hydroxidesSemiconductor/solid-state device manufacturingCycloneCobalt
The invention discloses a cobalt doping method of rare-magnet broad-forbidden band semiconductor zinc oxide under indoor temperature in the new-typed semiconductor self-cyclone electronic device making domain, which comprises the following steps: adopting solid-phased sintering method to make Co impurity in the ZnO according to certain proportion; proceeding long-time wet-method balling in the agate tank through planetary ball grinder; drying; grinding; sintering; annealing; using inert gas and hydrogen according to certain proportion; annealing doped zinc oxide rare-magnet sediment material; obtaining CoxZn1-xO material with magnet under indoor temperature.
Owner:PEKING UNIV
Zn1-x CoxO rare magnetic semiconductor film and its preparation technology
InactiveCN1725446AGood visible light transmittanceEasy to controlVacuum evaporation coatingSputtering coatingFilm materialCurie temperature
This invention relates to a semiconductor film material preparation technology of zn1-xCoXo with the ferromagnetic property (namely Zno doped with Co, x is the orthonormal atomic number ratio of Co atoms and Zn atoms, which applies a commercial electronic beam reaction vapor system and uses multi-crystal Zno powder and Co, Co2o3 or Co3O4 powder as the material to be grown on the surface of the substrate directly. Apart from the main doped element Co, it does not need any other sub- doped elements, besides, its Curie temperature is higher then the room one, the preparation technology is rather simple.
Owner:ZHEJIANG UNIV
Method for preparing Ni-doped AlN-based diluted magnetic semiconductor thin-film material
InactiveCN102154621ARoom temperature ferromagneticDoping amount is controllableVacuum evaporation coatingSputtering coatingCurie temperatureNitrogen gas
The invention discloses a method for preparing a Ni-doped AlN-based diluted magnetic semiconductor thin-film material. The method comprises the steps of: adopting Al target and metallic nickel pieces for magnetic control co-sputtering for 60 minutes, wherein the background vacuum degree of a system is 10<4>Pa-10<5>Pa, the working gases are high-purity nitrogen and high-purity argon in the sputtering process, the proportion between the argon and the nitrogen is 7: 3, the sputtering air pressure is 1.5Pa, the substrate temperature is 370 DEG C, the sputtering power is 300W, a substrate is an n-type Si (100), and the distance between the target material and the substrate is 60mm; and cleaning the substrate for removing the surface impurities, and then obtaining the AlN-based diluted magnetic semiconductor thin-film material with different dosage concentrations by changing the number of the nickel pieces. The method is simple in preparation technique and high in rate of deposition, can be used for obtaining the diluted magnetic semiconductor thin-film material which has ferromagnetism at room temperature, high Curie temperature and controllable performances without any subsequent treatment, and has important research value and wide application prospect.
Owner:XINJIANG UNIVERSITY
Method for preparing room temperature ferromagnetic semiconductor Co dopped TiO2 film
InactiveCN1851866ARoom temperature ferromagneticNo effect on phase structureSemiconductor/solid-state device manufacturingHydrogenRoom temperature
This invention provides a preparation method for TiO2 film doped with Co for a room temperature ferro-magnetic semiconductor, which applies a sol-gel method to prepare Co doped TiO2 sol and coats the sol on a substrate of a monocrystal silicon to form a CoxTi1-xO2 film to be annealed and crystallized directly under the vacuum to have the ferromagnetic property, in which, said film does not have the property of room temperature in air, it must be annealed secondly in vacuum or He atmosphere.
Owner:PEKING UNIV SHENZHEN GRADUATE SCHOOL
Preparation method of Si-doped AlN diluted magnetic semiconductor film
InactiveCN102352485ADoping amount is controllableIncrease deposition rateVacuum evaporation coatingSputtering coatingSputteringMagnetic semiconductor
The invention discloses a preparation method of an Si-doped AlN diluted magnetic semiconductor film, which uses high-purity nitrogen as work gas, high-purity Al targets and silicon wafers are adopted for in-situ co-sputtering, the background vacuum degree of a system is 10<-5>Pa to 10<-4> Pa, a substrate is n type Si(100), the distance from the targets and the substrate is 60mm, the sputtering power is 300W, the sputtering air pressure is 1.5Pa, and the substrate temperature is 370 DEG C, and the sputtering time is 60min. After the substrate is cleaned, and surface impurities are removed, the AlN diluted magnetic semiconductor film with different doping concentrations are obtained through changing the number of the doping silicon wafers. The method has the advantages that the preparation deposition velocity is high, the process is simple, and in addition, the diluted magnetic semiconductor film materials with the room temperature ferromagnetism and high Curie temperature can be obtained without any subsequent treatment, so the method has important study value and wide application prospects.
Owner:XINJIANG UNIVERSITY
Growth method of nonpolar ZnO crystal film
InactiveCN101481817AMature technologyEasy to operatePolycrystalline material growthFrom condensed vaporsMagnetic semiconductorRoom temperature
The invention relates to a growing method for no polarity ZnO crystal thin films. The pulsed laser deposition is adopted. Firstly, ZnO, MnO2 and Na2CO3 fine powder are weighted and ground in a ball way, pressed and sintered to obtain ceramic target co-doped with Mn-Na; and then the pulsed laser deposition is used for growing the no polarity ZnO crystal thin films on an under layer. The method has the advantages of mature technique, simple operation, low cost, and easy implementation. The grown thin film has a axis preferred orientation, has room temperature ferromagnetism, is a dilute magnetic semiconductor and can be applied to LEDs and memory devices.
Owner:ZHEJIANG UNIV
Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line
InactiveCN1908250ANo pollution in the processLow preparation temperaturePolycrystalline material growthFrom chemically reactive gasesTube furnaceMagnetic semiconductor
the invention discloses a preparing method of indoor-temperature magnetic Zn1-xMnxO nanometer line in the rare-magnetic semiconductor nanometer material preparing domain, which comprises the following steps: cleaning silicate through HCl and acetone; adopting Zn powder and MnCl2 powder and evaporating source in the adjacent quartz ship; making silicate as receiving substrate at intersecting part of two evaporating source vertically; setting the vertical distance between silicate and evaporating source at 6-8 mm; placing quartz ship in the pipe-typed furnace; aerating gas in the system inlet; conducting gas in the water through rubber conduct; aerating argon gas at 300-400ml / min for 5-8 min; changing the flow of argon gas at 30-50 ml / min; heating the pipe-typed furnace at 800-830 deg.c; maintaining the system pressure at atmospheric condition; keeping temperature for 120-150 min; cooling to indoor temperature naturally to obtain the even-distributing Zn1-xMnxO nanometer line.
Owner:UNIV OF SCI & TECH BEIJING
Method for preparing copper-doped aluminum nitride base diluted magnetic semiconductor nano rods
InactiveCN101887793ASimple processLow equipment requirementsNanostructure manufactureInorganic material magnetismAluminium chlorideCurie temperature
The invention discloses copper-doped aluminum nitride base diluted magnetic semiconductor nano rods and a preparation method thereof. The preparation method comprises the following steps of: mixing aluminum chloride and copper chloride uniformly in a certain molar ratio; and then performing ammoniation on the mixture in an ammonia atmosphere to obtain the Cu-doped aluminum nitride directly. The copper-doped aluminum nitride base diluted magnetic semiconductor nano rod has the advantages of simple method, low equipment requirement, high ferromagnetism of the prepared AIN:Cu, a Curie temperature higher than the room temperature, and good application prospect, and can be applied for nano spintronics devices, such as a spin field effect tube (spin-FET), a spin light-emitting diode (spin-LED) and the like.
Owner:SOUTH CHINA UNIV OF TECH
A vanadium adulterated TiOx nano lanthanon magnetic semiconductor and its making method
InactiveCN101188157AUniform particlesEasy to operateInorganic material magnetismInductances/transformers/magnets manufactureVanadium dopingMagnetic semiconductor
The invention relates to a vanadium doped titania nanometer dilute magnetic semiconductor and a preparation method thereof, wherein, the reparation method includes the steps that: A, the predecessor body solution of vanadium ion and the predecessor body solution of titanium ion are prepared; B, the two solutions are mixed to form sol; C, the sol is aged under room temperature to form wet gel, and the wet gel is dried in an oven until dry gel is formed; D, the dry gel is skived to obtain dry gel powder, and the dry gel powder removes organic matter through heat treatment in atmosphere; the dry gel powder annealings in inert atmosphere to be made into the nanometer powder of the vanadium doped titania dilute magnetic semiconductor. The vanadium doped titania nanometer dilute magnetic semiconductor made by the method of the invention forms a power shape, and can show the room temperature ferromagnetism.
Owner:HUAZHONG UNIV OF SCI & TECH
Cadmium oxide base room-temperature rare magnetic semiconductor nano material doped with nickel ion and preparation method thereof
InactiveCN101325112APromote crystallizationRoom temperature ferromagneticInorganic material magnetismLiquid/solution decomposition chemical coatingMetallurgyMagnetic semiconductor
The invention provides nickel ion-doped cadmium oxide-based room temperature diluted magnetic semiconductor nano material and the preparation method thereof. The nano material is composed of a CdO matrix, and is characterized in that the range of the mole ratio of the doped nickel ion to the CdO matrix is 1.0 to 20.0 percent. The recommended doping ratio is 2.0 to 15.0 percent, and the optimal doping ratio is 4.0 percent. The existence mode of the nickel ion-doped cadmium oxide-based diluted magnetic semiconductor nano material is the nano powder and the nano film. The nickel ion doped in the nickel ion-doped cadmium oxide-based diluted magnetic semiconductor nano material replaces the position of the crystal lattice of Cd<2+> in the matrix CdO, thereby the substitution doping is formed. The invention also provides the preparation method of the magnetic semiconductor nano material. The diluted magnetic semiconductor nano material has the advantages that the crystallization is good, and the doped nickel ion replaces the position of the crystal lattice of Cd<2+> in the CdO crystal lattice, thereby the substitution doping is formed. The prepared diluted magnetic semiconductor nano material has room temperature ferromagnetism.
Owner:NANJING UNIV
Preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles
InactiveCN102616830ARoom temperature ferromagneticMaterial nanotechnologyCadmium sulfidesBand gapSemiconductor
The invention relates to a preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles, and belongs to the technical field of preparation of diluted magnetic semiconductor nano-particle materials. The preparation method comprises the following steps: taking sphalerite structure Co-doped CdS diluted magnetic semiconductor nanoparticles as initial raw materials, keeping the pressure for 30-50min under the conditions that the pressure is 5.0-7.0GPa and the temperature is 600-800 DEG C, and performing cooling and pressure relief to obtain the rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles. According to the preparation method disclosed by the invention, the high-temperature and high-pressure method is utilized to synthesize the rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles; the forbidden bandwidth of a rock-salt mine CdS diluted magnetic semiconductor is 1.5-1.7eV; furthermore, the rock-salt mine CdS diluted magnetic semiconductor is an indirect band gap semiconductor and formed by combining the rock-salt mine structure with the sphalerite structure, and the band gap can change continuously within the whole spectral region from near ultraviolet light to far infrared light; and simultaneously, the rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles have room temperature ferromagnetism and thus become ideal materials for various optoelectronic and magneto-optical devices.
Owner:JILIN UNIV
Cu-doped-ZnO nano columnar crystal film with room-temperature ferromagnetism and preparing method of Cu-doped-ZnO nano columnar crystal film
ActiveCN105154826ARoom temperature ferromagneticWith light guideVacuum evaporation coatingSputtering coatingLight guideRoom temperature
The invention relates to a Cu-doped-ZnO nano columnar crystal film with room-temperature ferromagnetism and a preparing method of the Cu-doped-ZnO nano columnar crystal film. The chemical formula of the film is Zn<1-x>Cu<x>o, wherein x is larger than or equal to 0.01 but smaller than or equal to 0.1. The film has the room-temperature ferromagnetism. The microstructure of the film is in a columnar crystal form within the nano scale range, and columnar structures are evenly distributed and arranged orderly. The microstructure of the Cu-doped-ZnO nano columnar crystal film is in the columnar crystal form within the nano scale range, on one hand, the film has the light guiding performance and electrical conductance performance in the preferential direction, and on the other hand, the film has a larger specific surface area; and accordingly the film of this type has superior magnetoelectric performance and magneto-optic performance.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
SiC-based diluted magnetic semiconductor thin film and preparation method thereof
ActiveCN105551794AStrong saturation magnetizationPerformance improvements and applicationsChemical vapor deposition applicationHeat treatment applicationMagnetic semiconductorMagnetization
The invention relates to a SiC-based diluted magnetic semiconductor thin film and a preparation method thereof. The method comprises the following step of irradiating a SiC thin film material with a certain dosage of carbon particles <12>C<+>, thereby preparing the SiC-based diluted magnetic semiconductor thin film. The SiC thin film after being processed according to the method has obvious room-temperature ferromagnetism, is relatively high in saturation magnetization, and has favorable potential application value. The method is stable and effective, and the SiC-based diluted magnetic semiconductor thin film material can be prepared on the premise of no damage to the material.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Ordered inorganic-organic hybrid nano-material with room temperature ferromagnetism and preparation thereof
ActiveCN109461557ARoom temperature ferromagneticSimple processInductances/transformers/magnets manufactureMagnetic materialsOrganic structureFerromagnetism
The purpose of the invention is to provide an ordered inorganic-organic hybrid nano-material with room temperature ferromagnetism and a preparation method thereof. The ordered inorganic-organic hybridnano-material with the room temperature ferromagnetism is prepared by a chemical liquid phase method; the inorganic-organic hybrid nano-material has a two-dimensional nano-sheet or nano-particle microstructure; the inorganic structural unit is [Beta]-Fe<3-x>M<x>Se<4-y>Q<y> with a tetragonal crystal structure, wherein M=Cr, Co; Q=S, Te; x is greater than or equal to 0 and less than 3; y is greaterthan or equal to 0 and less than 4; and the organic structural unit is a metal organic amine complex. The obtained inorganic-organic hybrid nano-material has a magnetic order temperature higher thanthe room temperature and has a periodic structure; and the preparation method of the ordered inorganic-organic hybrid nano-material with the room temperature ferromagnetism is simple in preparation, easy to obtain raw materials, short in preparation cycle and low in temperature, and can be used for synthesizing a sheet-like hybrid nano-material having a size of 500 nm to 6 [Mu]m and a thickness of100 to 300 nm, or a granulated hybrid nano-material of 50 to 500 nm.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Method for preparing GaMnN diluted magnetic semiconductor thin film material
InactiveCN105018902AImprove doping efficiencyLow cost of preparationChemical vapor deposition applicationHeat treatment applicationQuantum computerIntrinsic semiconductor
A diluted magnetic semiconductor thin film material appears many novel physical properties, and the novel physical properties provide a broader space for development of novel spin-based devices, so that the diluted magnetic semiconductor thin film material has broad application prospects in the fields of magnetic inductors, high-density non-volatile memories, optical isolators, semiconductor laser devices, spin quantum computers and the like, and has become one of research hot spots in the field of the materials. Traditional methods for preparing thin film materials comprise a molecular beam epitaxy method, a metal organic matter chemical vapor deposition method and the like, and the methods are balanced growth methods and have the shortcomings of low doping efficiency, high equipment maintenance cost, expensive price of raw materials, long production period, complex tail gas treatment process and the like. The invention belongs to the technical field of semiconductors and provides a method for preparing a GaMnN diluted magnetic semiconductor thin film material, and the method has the advantages of high doping efficiency, low preparation cost, short production period, simple tail gas treatment and the like, and can greatly improve the production efficiency and economic benefits.
Owner:QILU UNIV OF TECH
A method for making GaMnN sparse magnetic semiconductor nano wire
InactiveCN100557770CRoom temperature ferromagneticStrong ferromagnetism at room temperatureSemiconductor/solid-state device manufacturingLinear controlNanowire
The invention discloses a method for preparing GaMnN dilute magnetic semiconductor nanowires. The method of the present invention comprises the following steps: 1) Mn doping: in-situ doping Mn on Ga2O3 nanowires; 2) ammoniation: ammoniating Ga2O3 nanowires doped with Mn under an ammonia atmosphere to obtain GaMnN dilute Magnetic semiconductor nanowires. The method of the invention is simple and requires less equipment, the prepared GaMnN nanowire has strong ferromagnetism, the Curie temperature is higher than room temperature, and its magnetic doping concentration is controllable, the nanowire has high purity, large output, and linear shape control (adjustment of growth parameters such as air pressure can prepare nanowires with a diameter of tens of nanometers to hundreds of nanometers), and can be used for spin field effect transistors (spin-FETs), spin light-emitting diodes (spin-LEDs), and spin resonance The fabrication of nano-spintronic devices such as spin-RTD has broad application prospects.
Owner:PEKING UNIV
Preparation method of micron-sized regular square-strip-shaped Bi2Fe4O9 multiferroic material, product and application thereof
ActiveCN113336271AEasy to prepareLow equipment requirementsIron compoundsMicron scaleOrganic solvent
The invention discloses a preparation method of a micron-sized regular square-strip-shaped Bi2Fe4O9 multiferroic material. By taking Bi (NO3)3.5H2O as a bismuth source, Fe(NO3)3.9H2O as an iron source and deionized water as a solvent, the hydrothermal time is controlled by adjusting the molar ratio of Bi<3+> to Fe<3+> and the concentration of a mineralizer NaOH; the micron-sized regular square-strip-shaped Bi2Fe4O9 multiferroic material which is regular in morphology, high in purity, good in uniformity and high in crystallinity is synthesized through a wet chemical method. The preparation method is simple in step, low in equipment requirement, free of auxiliary effects of an organic solvent, a surfactant and the like and environmentally friendly, the side length of the square section of the multiferroic material is 1.5-2.5 microns, the axial length of the multiferroic material is 10-14 microns, and the multiferroic material has certain visible light absorption capacity and room-temperature ferromagnetism and has a wide application prospect in the field of electronic ceramics.
Owner:ZHEJIANG SCI-TECH UNIV
A kind of epitaxial growth method of yttrium iron garnet film
ActiveCN106048726BQuality improvementPreparation parameters are easy to adjustPolycrystalline material growthFrom chemically reactive gasesHigh energyRoom temperature
Owner:NANJING UNIV
A ga2o3/(ga1-xfex)2o3 thin film with room temperature ferromagnetism and high ultraviolet light transmission and its preparation method
ActiveCN105845824BGuaranteed purityRoom temperature ferromagneticGalvano-magnetic material selectionGalvano-magnetic device manufacture/treatmentSemiconductor materialsHigh energy
Owner:北京镓创科技有限公司
Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film
InactiveCN101736303BChoose simpleIncrease usageVacuum evaporation coatingSputtering coatingUltra-high vacuumTitanium nitride
The invention relates to a preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film. An ultrahigh vacuum facing target magnetron sputtering coating machine is adopted, a pair of Ti targets of which the purity is 99.99% is installed on an opposite target head, and a Cr sheet is put on the surface of the Ti target; facing target magnetron sputtering equipment isstarted to successively start a first-stage mechanical pump and a second-stage molecular pump for vacuumizing until the back vacuum degree of a sputtering chamber is 2*10-4 Pa; mixed gas of Ar and N2is led into the vacuum chamber to keep the vacuum degree to 1 Pa; a sputtering power supply is started to apply 0.3A of current and about 500V of DC voltage on a pair of Ti targets to cause sputtering current and voltage to be stable; after sputtering, the sputtering gas Ar and N2 are stopped to be led in, a gate valve is totally opened to continue vacuumizing, and the vacuum system is closed; the vacuum chamber is opened to take out the sample. Compared with Cr-doped TiN films prepared with other methods, the film prepared with the invention has room temperature ferromagnetism; the adopted method is simple and practical and is favorable for popularizing in industrial production.
Owner:TIANJIN UNIV
Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line
InactiveCN100357499CIn situ dopingRealize large area preparationPolycrystalline material growthFrom chemically reactive gasesMagnetic semiconductorTube furnace
the invention discloses a preparing method of indoor-temperature magnetic Zn1-xMnxO nanometer line in the rare-magnetic semiconductor nanometer material preparing domain, which comprises the following steps: cleaning silicate through HCl and acetone; adopting Zn powder and MnCl2 powder and evaporating source in the adjacent quartz ship; making silicate as receiving substrate at intersecting part of two evaporating source vertically; setting the vertical distance between silicate and evaporating source at 6-8 mm; placing quartz ship in the pipe-typed furnace; aerating gas in the system inlet; conducting gas in the water through rubber conduct; aerating argon gas at 300-400ml / min for 5-8 min; changing the flow of argon gas at 30-50 ml / min; heating the pipe-typed furnace at 800-830 deg.c; maintaining the system pressure at atmospheric condition; keeping temperature for 120-150 min; cooling to indoor temperature naturally to obtain the even-distributing Zn1-xMnxO nanometer line.
Owner:UNIV OF SCI & TECH BEIJING
A micron-scale regular square bar bi 2 fe 4 o 9 Preparation method, product and application of multiferroic material
The invention discloses a micron-scale regular square strip-shaped Bi 2 Fe 4 o 9 The preparation method of multiferroic material, with Bi(NO 3 ) 3 ·5H 2 O is the bismuth source, Fe(NO 3 ) 3 9H 2 O is the iron source, using deionized water as the solvent, by adjusting the Bi 3+ with Fe 3+ The molar ratio and the concentration of the mineralizer NaOH, control the hydrothermal time, wet chemical method to synthesize regular shape, high purity, good uniformity, high crystallinity micron-scale regular square Bi 2 Fe 4 o 9 Multiferroic materials. The preparation method has simple steps, low equipment requirements, no need for auxiliary effects of organic solvents and surfactants, and is environmentally friendly. The micron-sized regular square bar-shaped Bi 2 Fe 4 o 9 The square section of multiferroic materials has a side length of 1.5-2.5 μm and an axial length of 10-14 μm, and has a certain visible light absorption capacity and room temperature ferromagnetism, and has a wide application prospect in the field of electronic ceramics.
Owner:ZHEJIANG SCI-TECH UNIV
A preparation method of uniformly doped one-dimensional dilute magnetic semiconductor material
InactiveCN105731544BEvenly dopedImprove uniformityMaterial nanotechnologyZinc oxides/hydroxidesShielding gasManganate
Owner:XINYANG NORMAL UNIVERSITY
Preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles
InactiveCN102616830BRoom temperature ferromagneticMaterial nanotechnologyCadmium sulfidesFar infraredHigh pressure
Owner:JILIN UNIV
Cadmium oxide base room-temperature rare magnetic semiconductor nano material doped with nickel ion and preparation method thereof
InactiveCN101325112BPromote crystallizationRoom temperature ferromagneticInorganic material magnetismLiquid/solution decomposition chemical coatingMagnetic semiconductorRoom temperature
Owner:NANJING UNIV
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