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Method for preparing room temperature ferromagnetic semiconductor Co dopped TiO2 film

A semiconductor, coxti1-xo2 technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems that limit practical applications

Inactive Publication Date: 2006-10-25
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Diluted magnetic semiconductors based on II VI and III V compound semiconductors have been extensively studied, such as (Cd, Mn)Te and (Ga, Mn)As, but the Curie temperature of these materials is generally lower than 110K, which limits their applications. practical application

Method used

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  • Method for preparing room temperature ferromagnetic semiconductor Co dopped TiO2 film
  • Method for preparing room temperature ferromagnetic semiconductor Co dopped TiO2 film
  • Method for preparing room temperature ferromagnetic semiconductor Co dopped TiO2 film

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Example 1 Preparation of room temperature ferromagnetic semiconductor Co x Ti 1-x o 2 (x=0.1) film

[0026] Preparation of Co on Si(001) Single Crystal Substrate by Sol-Gel Method 0.1 Ti 0.9 o 2 film. Utilize tetra-n-butyl titanate and cobalt acetate as precursors (Co:Ti molar ratio is 1:9), dissolve them in absolute ethanol (concentration of solution is 0.1mol / L), add acetylacetone as complexing agent, nitric acid as a catalyst, drop an appropriate amount of deionized water, use a magnetic stirrer to stir the solution at room temperature for 3 hours to fully mix the solution, and place it in the air for two days to obtain stable Co-doped TiO 2 Sol. Co-doped TiO 2 The sol was coated on the Si(001) substrate, and the spin-coating process of the sol was first performed at 500 rpm for 10 seconds, and then at 3500 rpm for 60 seconds to obtain a uniform thickness of Co 0.1 Ti 0.9 o 2 film. After the film is dried at 100°C for 10 minutes, the next film spin coatin...

Embodiment 2

[0028] Example 2 Preparation of room temperature ferromagnetic semiconductor Co x Ti 1-x o 2 (x=0.05) film

[0029] Preparation of Co on Si(001) Single Crystal Substrate by Sol-Gel Method 0.05 Ti 0.95 o 2 film. Use tetra-n-butyl titanate and cobalt nitrate as precursors (Co:Ti molar ratio is 5:95), dissolve them in ethylene glycol (concentration of solution is 0.1mol / L), add glacial acetic acid as complex agent, nitric acid as a catalyst, drop an appropriate amount of deionized water, use a magnetic stirrer to stir the solution at room temperature for 3 hours to fully mix the solution, and heat and age at 60 ° C for 12 hours to obtain stable Co-doped TiO 2 Sol. Co-doped TiO 2 The sol was coated on the Si(001) substrate, and the spin-coating process of the sol was first performed at 500 rpm for 10 seconds, and then at 3500 rpm for 60 seconds to obtain a uniform thickness of Co 0.05 Ti 0.95 o 2 film. After the film is dried at 80°C for 15 minutes, the next film spin ...

Embodiment 3

[0030] Example 3 Preparation of room temperature ferromagnetic semiconductor Co x Ti 1-x o 2 (x=0.15) film

[0031] Preparation of Co on Si(001) single crystal substrate by sol-gel method 0.15 Ti 0.85 o 2 film. Utilize tetra-n-butyl titanate and cobalt chloride as precursors (Co:Ti molar ratio is 15:85), dissolve them in absolute ethanol (concentration of solution is 0.1mol / L), add acetylacetone as complex Mixture, hydrochloric acid as a catalyst, drop an appropriate amount of deionized water, use a magnetic stirrer to stir the solution at room temperature for 3 hours to fully mix the solution, and heat and age at 60°C for 12 hours to obtain stable Co-doped TiO 2 Sol. Co-doped TiO 2 The sol was coated on the Si(001) substrate, and the spin-coating process of the sol was first performed at 500 rpm for 10 seconds, and then at 4000 rpm for 60 seconds to obtain a uniform thickness of Co 0.15 Ti 0.85 o 2 film. After the film is dried at 120°C for 10 minutes, the next fi...

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Abstract

This invention provides a preparation method for TiO2 film doped with Co for a room temperature ferro-magnetic semiconductor, which applies a sol-gel method to prepare Co doped TiO2 sol and coats the sol on a substrate of a monocrystal silicon to form a CoxTi1-xO2 film to be annealed and crystallized directly under the vacuum to have the ferromagnetic property, in which, said film does not have the property of room temperature in air, it must be annealed secondly in vacuum or He atmosphere.

Description

technical field [0001] The invention belongs to the field of preparation of novel semiconductor spintronic devices, and in particular provides a method for preparing room temperature ferromagnetic semiconductor Co-doped TiO by using a sol-gel method combined with a post-annealing process. 2 thin film method. Background technique [0002] Dilute magnetic semiconductors combine the charge transport properties of semiconductors and the information storage properties of magnetic materials, and are important materials for the preparation of new semiconductor spintronic devices. Due to the introduction of magnetic elements, dilute magnetic semiconductor materials also have a series of singular properties different from ordinary semiconductors, which contain rich physical connotations. Therefore, the study of dilute magnetic semiconductors is of great significance both in basic theory and in practical applications. Oxide-based dilute magnetic semiconductor is a promising dilute m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/208
Inventor 刘力锋康晋锋王漪唐浩张兴王新安韩汝琦
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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