290 results about "Co doped" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention relates to the technical field of luminescent materials, and discloses a preparation method and application of a transition metal and chalcogen ion doped metal halide high-efficiency wide-spectrum luminescent material, the chemical formula of the transition metal and chalcogen ion doped metal halide is Cs2Sn1-x-yCl6: x% Te < 4 + >, yMo < 4 + >, the ultra-wideband fluorescent powder converted light emitting diode (LED) covers the range from visible light (VIS) to near infrared light (NIR), and shows remarkable potential in practical application. According to the invention, ultra-wide spectrum emission from 400 nm to 1400 nm is realized in Mo < 4 + >-Te < 4 + > co-doped Cs2SnCl6, and the photoluminescence quantum yield of 95.3% is achieved, the excellent performance is realized through efficient energy transfer from Te < 4 + > to Mo < 4 + > and passivation synergistic effect of vacancy defects, and the performance can be verified through theoretical calculation and spectral research; finally, the ultra-wideband fluorescent powder conversion LED based on the Mo < 4 + > and Te < 4 + > co-doped Cs2SnCl6 is successfully prepared and is applied to the fields of blood gas analysis and night vision imaging.

Disclosed in the present invention are a doped manganese-based Prussian white positive electrode material, and a preparation method therefor and the use thereof. The chemical general formula of the doped manganese-based Prussian white positive electrode material of the present invention is Nan-dAdMn1-xMx[Fe(CN)6]y·zH2O, wherein A is one or more of Li+, K+, Rb+, Cs+, NH4 +, Cu+ or Ag+; M is one or more of Ni2+, Fe2+, Co2+, Zn2+ or Cu2+; and 1.7≤n≤2, 0.02≤d≤0.2, 0.2≤x≤0.4, 0.9≤y<1 and 0＜z<0.8. The doped manganese-based Prussian white positive electrode material in the present invention is co-doped at the Mn site and the Na site, and using the synergistic effect of M and A doping ions can not only effectively inhibit the Jahn-Teller effect of Mn3+, but can also greatly reduce the content of crystal water in the positive electrode material, and can also have the effects of reducing lattice defects and improving lattice stability and sodium ion transmission kinetics, such that the doped manganese-based Prussian white positive electrode material has a high capacity, good rate capability and good cycling stability.

The invention discloses a solar cell, comprising a substrate having a first surface and a second surface arranged oppositely; first doped regions are arranged in the substrate and are regions close to the first surface, second semiconductor material layers are stacked on the first surface of the substrate, and the first doped regions and the second semiconductor material layers are alternately arranged; a spacer region is arranged between the second semiconductor material layer and the first doped region; the doping type of the second semiconductor material layer is opposite to that of the first doped region; the second semiconductor material layer comprises an ultrathin material layer and a second silicon-containing doped layer which are stacked in sequence; the surface of one side, far away from the second silicon-containing doping layer, of the ultrathin material layer is laminated with the substrate; the first doped region comprises a co-doped region; the co-doped region is connected with a partial region of the second silicon-containing doped layer; the first electrode is in contact and electric connection with the first doped region; and the second electrode is in contact and electrical connection with the second silicon-containing doping layer.

The invention discloses an Mg + Nb co-doped TiO2 giant dielectric ceramic material and a preparation method thereof, and relates to the technical field of giant dielectric materials. The (Mg + Nb) co-doped TiO2 ceramic is successfully prepared by adopting a traditional solid phase method, the performance of the TiO2-based giant dielectric ceramic is regulated and controlled through a new doping strategy, the raw material is single, the preparation process is simple, the cost is low, the repeatability is good, the yield is high, the obtained ceramic material has giant dielectric performance, and the preparation method is suitable for industrial production. The (Mg + Nb) co-doped TiO2 novel giant dielectric ceramic can meet the requirements of a dielectric material with high dielectric constant, low dielectric loss and good temperature and frequency stability, and compared with other widely applied giant dielectric materials, the titanium dioxide-based giant dielectric ceramic has the characteristics of simplicity in preparation and excellent dielectric property.

The invention provides a multi-color Ge-based S, P co-doped barrier impurity band detector and a preparation method thereof, the multi-color Ge-based S, P co-doped barrier impurity band detector comprises a mesa array composed of a plurality of pixels, and the pixels comprise a high-conductivity Ge substrate layer, an absorption layer, a SiNx passivation layer, a high-purity Ge barrier layer and a positive electrode contact layer; a negative electrode is formed on the lower surface of the high-conductivity Ge substrate layer, the absorption layer is located on the upper surface of the high-conductivity Ge substrate layer, and the absorption layer is an S and P co-doped absorption layer; the high-purity Ge barrier layer is located on the upper surface of the absorption layer; the positive electrode contact layer is formed on the upper surface of the high-purity Ge barrier layer, and a positive electrode is formed in a local area on the positive electrode contact layer; pixel isolation grooves are formed in the side faces of the positive electrode contact layer and the barrier layer, and the SiNx passivation layer is located at the bottoms of the pixel isolation grooves. According to the invention, spectral response that a single detector covers 2-150 [mu] m can be realized, and the response bandwidth of the device is greatly improved.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a zinc-sulfur co-doped ZIF-67 derivative composite material as well as a preparation method and application thereof, and belongs to the technical field of advanced oxidation. The composite material is prepared through a coordination-substitution-calcination integrated process. The preparation method comprises the following steps: firstly, mixing a cobalt source and an organic ligand in methanol, and introducing a sulfur source to form a cobalt-based precursor; and drying, grinding with a zinc source, and calcining in an inert atmosphere. According to the method, stable cobalt active sites are replaced by isocrystals of zinc, sulfur doping promotes cobalt and peroxymonosulfate to form a weak oxidizing intermediate, and efficient and high-selectivity degradation of organic pollutants is achieved under the condition that a strong free radical path is not needed. The material is stable in structure and high in water quality interference resistance, is suitable for catalyzing peroxymonosulfate to degrade organic pollutants in a water body, and particularly has remarkable advantages in a complex water body.

The invention discloses a preparation method of a Ti and Cu co-doped composite nitride film on the surface of fluororubber, which comprises the following steps: cleaning and blow-drying a fluororubber substrate, putting the fluororubber substrate into a magnetron sputtering cavity, pumping to a high vacuum condition, and introducing Ar gas to clean the substrate; and then the modified Ti and Cu co-doped composite nitride film is obtained by adopting a cathode arc magnetic filtration technology. The friction performance of the obtained Ti and Cu co-doped composite nitride thin film is obviously improved, meanwhile, the density of the thin film is kept, and the binding force of the Ti and Cu co-doped composite nitride thin film and a fluororubber substrate is improved; the cathode arc magnetic filtration technology enables the doped elements to be uniformly dispersed in the film, so that the performance of the film can be improved with a small amount of doped elements, and the tribological performance of the film is improved.

The utility model belongs to the technical field of photovoltaic cells, and particularly relates to a back contact photovoltaic cell and a cell assembly thereof, which comprise a silicon substrate, an intrinsic amorphous silicon layer arranged on the backlight surface of the silicon substrate, N-type doped layers and P-type doped layers which are alternately arranged on the outer surface of the intrinsic amorphous silicon layer, and co-doped layers arranged between the N-type doped layers and the P-type doped layers. Conductive film layers and metal electrodes are sequentially arranged on the outer surfaces of the N-type doping layer and the P-type doping layer, and doping sources of the co-doping layer are a doping source of the N-type doping layer and a doping source of the P-type doping layer. The conductivity between the N-type doping layer and the P-type doping layer can be remarkably reduced, and transverse leakage current is avoided, so that the transverse insulativity of the back contact photovoltaic cell is improved, the cell performance such as the cell efficiency and the cell stability is improved, and the manufacturing cost can be reduced.

The invention provides an anion-cation co-doped solid electrolyte, a preparation method thereof, a solid-state battery and electric equipment, and relates to the field of solid electrolytes. The general chemical formula of the anion-cation co-doped solid electrolyte is Li < 2 + > (4-m) x Zr < 1-x > M < x > X < 6-ayAy, 0 < x < = 0.4, 0 < y < = 0.8, m is the valence state of M, and a is the valence state of A; m comprises a metal doping element with the ion radius larger than that of Zr < 4 + > and the valence state lower than that of Zr; x comprises a halogen element; a comprises one or more of O, S, N and P; the ion radius of A is smaller than X; the valence state of M comprises + 2 and / or + 3. The Li2ZrX6 solid electrolyte is subjected to anion and cation co-ion doping, so that the disorder degree of a crystal structure can be increased, a Li < + > transmission channel is widened, and the ionic conductivity is improved.

This application relates to a P-type gallium oxide and a preparation method thereof. The preparation method of the P-type gallium oxide includes providing a substrate, the material of the substrate includes β-gallium oxide, and a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate. Among them, the shallow-level acceptor impurities are elements of the same group as oxygen. When the deep-level acceptor impurities and the shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level towards the valence band top. This combined effect significantly improves the stability of P-type conductivity of β-gallium oxide.

The invention discloses a high-performance PbTe-PbS thermoelectric material and a charge balance doping preparation method thereof, and relates to the technical field of thermoelectric materials, Pb particles, Sb particles, Te blocks, S sheets and Ag strips are respectively weighed according to the molar ratio of 0.95: 0.033: 0.9: 0.1: 0.008 and then are loaded into a quartz tube for vacuum tube sealing, and the high-performance PbTe-PbS thermoelectric material is obtained through box-type furnace sintering, cold water quenching, box-type furnace annealing, cold water quenching and rapid hot pressing furnace sintering in sequence. The Sb, S and Ag co-doped PbTe thermoelectric material is obtained. According to the method, a Pb vacancy and an Ag gap are introduced through charge balance doping of Sb2Te3 to dynamically regulate and control chemical potential, the problems of PbS precipitation and carrier transport blocking of an n-type high-concentration doped PbTe-PbS material system are solved, the wide-temperature-range thermoelectric figure of merit of the small-bandwidth PbTe-PbS thermoelectric material is greatly improved, the process is stable and can be scaled, and technical support is provided for commercialization of PbTe-based thermoelectric devices.

The invention provides a double-doped high-density garnet type solid-state electrolyte and a preparation method thereof, and belongs to the technical field of solid-state battery materials, the double-doped high-density garnet type solid-state electrolyte Li6. 4La3-yYbyZr1. 7W0. 3O12 co-doped with W and Yb is adopted, y is 0.05-0.2, the main phase of the double-doped high-density garnet type solid-state electrolyte is of a cubic phase garnet structure, and the main phase of the double-doped high-density garnet type solid-state electrolyte is of a cubic phase structure. A second phase is distributed on the grain boundary, the second phase is LiYbO2, the density reaches 98.1%, the ionic conductivity is 6.54 * 10 <-4 > S / cm, the activation energy is 0.419 eV through double-element synergistic doping to stabilize the cubic phase and regulate the grain boundary structure, the electrolyte is suitable for a high-safety all-solid-state lithium battery, and the problems of phase stability and interface impedance of a traditional LLZO-based electrolyte are solved.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The present invention provides an Al-Nb co-doped lithium lanthanum zirconium oxide, a preparation method thereof, and a lithium ion battery. The chemical formula of the Al-Nb co-doped lithium lanthanum zirconium oxide is Li<subgt;7-y-3x< / subgt;Al<subgt;x< / subgt>La<subgt;3< / subgt>Zr<subgt;2-y< / subgt>Nb<subgt;y< / subgt>O<subgt;12; wherein: 0.05 ≤ x ≤ 0.10, 0.30 ≤ y ≤ 0.50; the Al-Nb co-doped lithium lanthanum zirconium oxide has a cubic phase structure; among them, Nb<supgt;5+ is doped by substituting an inequivalent cation at the Zr<supgt;4+ site; Al<supgt;3+ is concentrated at the grain boundaries of the cubic phase structure, substituting an inequivalent cation for Li<supgt;+, and also forms an amorphous Li-Al-O glass phase with Li<supgt;+. The present invention adopts a modification method of Nb-Al co-doping. By designing the doping ratios of Nb and Al, a pure cubic phase lithium lanthanum zirconium oxide powder is prepared, improving the ionic conductivity and stability of the lithium lanthanum zirconium oxide material.

The invention discloses a SbBr co-doped argyrodite type solid electrolyte and a preparation method thereof.The preparation method comprises the steps that Li2S, LiCl, P2S5 and SbBr3 are weighed according to the stoichiometric ratio and then subjected to ball milling treatment, and mixed powder is obtained; the mixed powder obtained in the step S1 is subjected to compression molding and placed in a muffle furnace to be heated and calcined, and a solid-phase reaction is conducted; and after the reaction is finished, naturally cooling to room temperature, and grinding to obtain the SbBr co-doped argyrodite type solid electrolyte. According to the preparation process of the argyrodite type solid electrolyte, a traditional solid-phase sintering process is adopted, the synthesis process is simple, and the repeatability is high. The ionic conductivity of the argyrodite type solid electrolyte prepared by the process can reach 10.4 mScm <-1 > at room temperature. The argyrodite type solid electrolyte prepared by the invention has high ionic conductivity and excellent air stability, and meets the requirements of industrial large-scale production. When the solid-state electrolyte provided by the invention is assembled into an all-solid-state battery, the cycle life of the all-solid-state battery can be remarkably prolonged due to good compatibility with lithium metal.

The invention relates to the technical field of carbon nanomaterials, particularly discloses a molybdenum-nitrogen co-doped carbon quantum dot, and also discloses application of the molybdenum-nitrogen co-doped carbon quantum dot. The molybdenum-nitrogen co-doped carbon quantum dot provided by the invention is synthesized by taking L-arginine, a molybdenum source and 1-pyrenecarboxaldehyde as precursors through a one-step hydrothermal method. The molybdenum-nitrogen co-doped carbon quantum dot provided by the invention has obvious advantages in detection of Cr2O7 < 2-> and luteolin, and can also be applied to fluorescent ink.

The invention discloses a green light Micro-LED epitaxial structure, a preparation method of the green light Micro-LED epitaxial structure and a green light Micro-LED, and relates to the field of semiconductor photoelectric devices. The epitaxial structure sequentially comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron transport layer, a multi-quantum well layer and a P-type GaN layer; the electron transport layer sequentially comprises a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer, a fifth sub-layer and a sixth sub-layer; the first sub-layer comprises a non-doped Al-containing nitride layer and a Si-doped Al-containing nitride layer which are alternately stacked; the second sub-layer, the third sub-layer and the fourth sub-layer are all C and Si co-doped Ga-containing nitride layers, the fifth sub-layer is a Si-doped AlGaN layer, and the sixth sub-layer comprises Si-doped GaN layers and InGaN layers which are alternately stacked; the Si doping concentration of the second sub-layer, the third sub-layer and the fourth sub-layer is greater than the Si doping concentration of the Si-doped Al nitride layer; and the Si doping concentrations of the second sub-layer, the third sub-layer and the fourth sub-layer are respectively greater than the C doping concentrations thereof. By implementing the invention, the lighting effect and the wavelength uniformity can be improved.

The invention relates to the field of battery electrode materials, and discloses an Al and LiH co-doped silicon negative electrode material and a preparation method and application thereof. The preparation method comprises the following steps: carrying out powder tabletting on Si and LiAlH4, carrying out vacuum heat treatment at 160-190 DEG C for 3-6 hours, and then carrying out vacuum heat treatment at 200-300 DEG C for 2-5 hours to obtain the Al and LiH co-doped silicon negative electrode material. According to the invention, co-doping of metal aluminum and lithium hydride is formed in the silicon negative electrode material through a specific method, so that the lithium ion battery can be endowed with higher initial coulombic efficiency and cycling stability.

The invention provides a doped cobalt-free lithium-rich manganese-based material as well as a preparation method and application thereof, and belongs to the field of batteries. The invention provides a doped cobalt-free lithium-rich manganese-based material, the chemical formula of the doped cobalt-free lithium-rich manganese-based material is Li < 1.2 > Ni < 0.2 > Mn (0.6-m) GdmO (2-n) Fn, m is more than or equal to 0.01 and less than or equal to 0.05, and n is more than or equal to 0.01 and less than or equal to 0.07. Gd and F are co-doped to synergistically improve the particle combination compactness and the surface roughness of the cobalt-free lithium-rich manganese-based material, so that the specific discharge capacity, the mechanical property, the stability, the first coulombic efficiency and the cycle performance of the battery are improved, and the voltage of the battery is not easy to decline.

The present invention discloses a p-type CaMg2Sb2-based thermoelectric material and a preparation method thereof, belonging to the field of new energy materials. The chemical composition of the CaMg2Sb2-based thermoelectric material is: Ca 1‑x‑ y Yb x Li y Mg 2‑z Cd z Sb2, where 0 < x < 0.7, 0 < y < 0.03, 0 < z ≤ 0.5; the preparation method is to prepare by high-energy ball milling and spark plasma sintering; the p-type CaMg2Sb2-based thermoelectric material provided by the present invention significantly improves the carrier concentration and mobility of the material and reduces the lattice thermal conductivity of the material by co-doping with Yb, Li, and Cd. The highest ZT of the material is between 0.9 and 1.1; the present invention realizes the preparation of a p-type CaMg2Sb2-based thermoelectric material with high carrier concentration and high mobility, and its thermoelectric performance is significantly improved.

The application discloses a kind of Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and preparation method and application thereof, the chemical formula of the energy storage ceramic material is Ag 1‑3x Bi x Nb 1‑3x / 5 Y x O3, wherein 0 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material is in A / B site.The application also specifically discloses preparation method of the Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and application thereof in preparation of ceramic capacitor.The application prepares AgNbO3-based antiferroelectric energy storage ceramic material with pbcm space group perovskite structure by simple, easy-to-implement technical process, improves its breakdown field strength (E b ) While also reducing the remanent polarization value (P r ), and can effectively improve energy storage density and the stability of antiferroelectric phase at room temperature.

The invention discloses a perovskite cathode material and a preparation method and application thereof, the general chemical formula of the material is La < 1.2 > Sr < 0.8 > Ni < 0.5 > Cu < x > Fe < 0.5-x > O < 4 + delta > (x = 0.2, 0.3, 0.4), and the material has an R-P perovskite structure of an I4 / mmm space group. The preparation method adopts a sol-gel method, takes nitrate as a raw material, and is prepared by chelating, gelatinizing, drying and calcining at 850 DEG C. The performance of the material is optimal when x is equal to 0.4, the electronic conductivity of the material at the temperature of 400 DEG C reaches 117Scm <-1 >, and the area specific resistance ASR in humid air at the temperature of 650 DEG C is 0.251 ohm cm. According to the invention, Fe and Cu are co-doped at a B site, and a series of materials of La < 1.2 > Sr < 0.8 > Ni < 0.5 > Cu < x > Fe < 0.5-x > O < 4 + delta > (x = 0.2, 0.3, 0.4) are designed and prepared, so that the conductivity and the catalytic activity of the materials are synchronously improved, and the requirements of PCFC cathodes are met.

The application discloses a P and O co-doped FeNiRuOx nano catalyst and a preparation method and application thereof, relates to the technical field of electrocatalytic materials, and the catalyst takes Fe, Ni and Ru as metal active centers, reconstructs a surface electronic structure through P and O double anion co-doping, and forms a polygonal nano structure, wherein the mass fraction ranges of Fe, Ni, Ru and P are 5.0-6.0%, 75-78%, 11-12% and 6.5-7.0% respectively. The preparation method comprises the following steps: taking iron acetylacetone, nickel acetylacetone and ruthenium chloride trihydrate as metal sources, synthesizing a precursor through a solvothermal reaction, and realizing P and O co-doping through a sodium hypophosphite assisted solid-phase phosphorization process, and the preparation process is mild. The synthesized catalyst has unique structural advantages, the formed polygonal nano structure has a large specific surface area and rich grain boundary defects, more active sites are exposed, and convenient channels are provided for the mass transfer of reactants and products. The synergistic effect among the polymetals further enhances the catalytic performance.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration / activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

The present invention discloses a Cu<supgt;2+< / supgt> - Li<supgt;+< / supgt> co-doped gallate fluorescent material with tunable afterglow. This material is a novel optical material with a wide emission band (~230 nm) and long afterglow performance (~20 min). In addition, with the addition of Li<supgt;+< / supgt>, the emission intensity is enhanced (6.62 times), the defect concentration is increased (3.6 times), and the afterglow time is extended (~20 min), thus realizing the process of tunable afterglow. The afterglow modulation defect engineering strategy in the present invention may further inspire innovative ideas for the preparation of high-performance optical information storage and encryption high-performance long afterglow materials.

The application belongs to the field of materials, and discloses a preparation method of high-performance GeTe thermoelectric material, Ge powder, Zr powder, Pb powder, Te powder and Cu2Te powder are respectively taken according to the molar ratio of 0.965-x:0.02:x:0.985:0.015, wherein the value of x is respectively 0, 0.06 and 0.08, then the powders are loaded into a quartz tube for vacuum sealing, and are sequentially subjected to sintering in a box furnace, cold water quenching, annealing in a box furnace, cold water quenching and sintering in a rapid hot-pressing furnace, so as to obtain Zr, Cu2Te and Pb co-doped high-performance GeTe thermoelectric material. The method has simple preparation process, high operability and high repeatability, and the prepared GeTe doped with Zr, Cu2Te and Pb compound has the characteristics of high crystallinity and high density. The method can greatly improve the thermoelectric figure of merit of GeTe thermoelectric material, and the thermoelectric figure of merit is at a high level in the thermoelectric report, so the method has good application prospect.

The invention discloses a Co / Ni co-doped high-nuclear-number titanium-oxygen cluster compound as well as a preparation method and application thereof, and relates to the field of materials and photocatalytic materials. The molecular formula of the Co / Ni co-doped high-nuclear-number titanium oxygen cluster compound is Ti < 14 > M2O21 (OH2) Bz18 (BzH) (Nfm) 2, and the molecular formula of the Co / Ni co-doped high-nuclear-number titanium oxygen cluster compound is Ti < 14 > CoNi; wherein M represents a co-doped metal center of Co and Ni, Bz is a benzoic acid ligand, and Nfm is an N-formylmorpholine molecule. According to the Co / Ni co-doped high-nuclear-number titanium oxygen cluster compound prepared by the preparation method disclosed by the invention, due to co-doping of Co and Ni, the high-nuclear-number titanium oxygen cluster compound has relatively high catalytic performance and selectivity and has excellent stability; when the photocatalyst is used for preparing CO through photocatalysis of CO2, the selectivity of the product CO is greater than 89%, and no by-product (such as CH4 and HCOOH) is generated.

The invention relates to the field of manufacturing of optoelectronic devices, in particular to a photoelectric detector based on an erbium-phosphorus co-doped WS2 / Si2H van der Waals heterojunction, and a manufacturing method of the photoelectric detector comprises the following steps: growing an erbium-phosphorus co-doped WS2 material on a silicon wafer with an H bond attached on the surface by adopting a normal-pressure chemical vapor deposition method to obtain an erbium-phosphorus co-doped WS2 material sample; spin-coating a photoresist on an erbium-phosphorus co-doped WS2 material sample, fixing the sample, and reserving an electrode pattern on the sample through laser direct writing and developing operation; and coating a film on the reserved electrode pattern by adopting a magnetron sputtering technology, and carrying out photoresist removal operation on a coated sample to obtain the photoelectric detector based on the erbium-phosphorus co-doped WS2 / Si2H Van der Waals heterojunction. By constructing the WS2 / Si2H van der Waals heterojunction, the problem of lattice matching generally existing in a traditional epitaxial layered semiconductor is solved, and the optical frequency response range of the photoelectric detector is expanded by doping materials.