396 results about "Co doped" patented technology

The invention relates to a crystal bar axial resistivity control method and device, and the method comprises the steps: predicting the first antimony evaporation capacity of a crystal pulling equal-diameter process in an antimony-phosphorus co-doped single crystal furnace according to the incidence relation between the evaporation constant in the antimony-phosphorus co-doped single crystal furnace and the excess material weight, and controlling the antimony-phosphorus doping ratio of the equal-diameter process according to the first antimony evaporation capacity; according to the incidence relation between the evaporation constant and the lead-discharge duration, the second antimony evaporation capacity in the crystal pulling lead-discharge process in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping proportion in the lead-discharge process is controlled according to the second antimony evaporation capacity; and according to the target re-feeding evaporation calculation model, predicting a third antimony evaporation capacity in a re-feeding stage in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio in the re-feeding stage according to the third antimony evaporation capacity, so that the axial resistivity uniformity of the crystal bar obtained by straight pulling is within a target range. At least the uniformity of axially doped elements in monocrystalline silicon can be improved in the crystal pulling process, and the uniformity of the axial resistivity of a crystal bar is improved.

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention relates to the technical field of luminescent materials, and discloses a preparation method and application of a transition metal and chalcogen ion doped metal halide high-efficiency wide-spectrum luminescent material, the chemical formula of the transition metal and chalcogen ion doped metal halide is Cs2Sn1-x-yCl6: x% Te < 4 + >, yMo < 4 + >, the ultra-wideband fluorescent powder converted light emitting diode (LED) covers the range from visible light (VIS) to near infrared light (NIR), and shows remarkable potential in practical application. According to the invention, ultra-wide spectrum emission from 400 nm to 1400 nm is realized in Mo < 4 + >-Te < 4 + > co-doped Cs2SnCl6, and the photoluminescence quantum yield of 95.3% is achieved, the excellent performance is realized through efficient energy transfer from Te < 4 + > to Mo < 4 + > and passivation synergistic effect of vacancy defects, and the performance can be verified through theoretical calculation and spectral research; finally, the ultra-wideband fluorescent powder conversion LED based on the Mo < 4 + > and Te < 4 + > co-doped Cs2SnCl6 is successfully prepared and is applied to the fields of blood gas analysis and night vision imaging.

The invention discloses a preparation method and an application of an S and N co-doped small-nano-size high-entropy intermetallic compound. 2, 2 '-bithiophene is simultaneously used as a metal ligand and a sulfur source to be applied to synthesis of the high-entropy intermetallic compound, and sulfur atoms in the substance can form a complex with metal ions, so that a metal precursor can be uniformly and firmly distributed on the surface of a commercial carbon carrier, and formation of the high-entropy intermetallic compound in the subsequent annealing process is facilitated; the S and N co-doped high-entropy alloy intermetallic compound catalyst synthesized by the invention has excellent electrochemical performance in a fuel cell, and particularly has remarkable performance in the aspect of stability; wherein the mass activity of the S and N co-doped high-entropy alloy intermetallic compound PtCuNiCoFe / C-SN (PCNCF-SN) catalyst under the condition of 0.9 V (vs.RHE) reaches 2.7 A * mg <-1 > Pt, which is more than 12.3 times of that of commercial Pt / C; and in the aspect of stability, the mass activity can still be kept at 65% or above after 100000 circles of accelerated durability.

The invention relates to an antimony-phosphorus co-doped crystal pulling evaporation capacity prediction method, device, equipment and product. The method comprises the following steps: obtaining a first model and a second model of an antimony-phosphorus co-doped single crystal furnace in a preset state; the first model comprises an incidence relation between the antimony evaporation capacity and the antimony evaporation constant in the straight-pulling equal-diameter stage; the second model comprises an association relationship between the antimony evaporation capacity and the antimony concentration after antimony evaporation in the straight pulling and discharging stage, and the antimony concentration after antimony evaporation is associated with an antimony evaporation constant; according to a first incidence relation between the antimony evaporation constant and the weight of excess materials in the single crystal furnace and a first model, obtaining a first predicted antimony evaporation capacity in a straight-pulling equal-diameter stage; according to a second incidence relation between the antimony evaporation constant and the lead-and-discharge duration in the single crystal furnace and a second model, obtaining a second predicted antimony evaporation capacity in the straight-pull lead-and-discharge stage; and according to the first predicted antimony evaporation capacity and the second predicted antimony evaporation capacity, the antimony evaporation capacity in the crystal pulling state is determined, and at least the antimony evaporation capacity in the antimony-phosphorus co-doped crystal pulling state can be accurately predicted.

The invention discloses an S / Fe co-doped magnetic porous carbon material as well as a preparation method and application thereof. The preparation method of the S / Fe co-doped magnetic porous carbon material comprises the following steps: mixing a 2-methylimidazole solution, a zinc salt solution and an organic iron solution for hydrothermal reaction to obtain an iron-containing zeolite imidazate framework precursor; dispersing the iron-containing zeolite imidazate framework precursor and elemental sulfur in a solvent, and heating to obtain an S / Fe co-doped magnetic porous carbon material precursor; and performing high-temperature pyrolysis on the S / Fe co-doped magnetic porous carbon material precursor in a protective atmosphere to obtain the S / Fe co-doped magnetic porous carbon material. The porous carbon material has the advantages of large specific surface area, abundant pore structure, multiple catalytic sites and high stability, can efficiently catalyze periodate to degrade chlorophenol organic pollutants in wastewater, and has the advantages of thorough removal effect, no secondary pollution, good application prospect, simple preparation method, low cost and suitability for industrial production.

The invention discloses a preparation method of a modified O3 type layered sodium-ion battery positive electrode material co-doped with transition metal by multiple cations, and belongs to the technical field of preparation of sodium-ion battery electrode materials. The technical key points of the invention are as follows: the O3 type layered sodium ion battery positive electrode material NaNi1 / 3Fe1 / 3Mn1 / 3O2 is modified by doping Cu < 2 + > and Al < 3 + > at Ni and Fe sites respectively, and the chemical formula of the O3 type layered sodium ion battery positive electrode material NaNi1 / 3Fe1 / 3Mn1 / 3O2 is NaMxNi (1 / 3-x) NyFe (1 / 3-y) Mn1 / 3O2 (wherein M is Zn, Cu, Mg and the like; n is Co, Ce, Ga, Al, Cr and the like; 0 < = x < = 0.33, and 0 < = y < = 0.33). The invention specifically discloses a preparation method of a modified sodium ion battery positive electrode material co-doped with multiple cations at a transition metal site, and the method can inhibit phase change in a sodium ion deintercalation process and improve the cycling stability of the material, so that the electrochemical performance of the material is improved. According to the O3 type NaMxNi (1 / 3-x) NyFe (1 / 3-y) Mn1 / 3O2 prepared by the preparation method, after heterogeneous ions are doped into Ni and Fe sites, a supporting effect can be achieved to stabilize the structure, rapid de-intercalation of sodium ions is facilitated, the capacity attenuation is less, and good cycle stability is shown.

Disclosed in the present invention are a doped manganese-based Prussian white positive electrode material, and a preparation method therefor and the use thereof. The chemical general formula of the doped manganese-based Prussian white positive electrode material of the present invention is Nan-dAdMn1-xMx[Fe(CN)6]y·zH2O, wherein A is one or more of Li+, K+, Rb+, Cs+, NH4 +, Cu+ or Ag+; M is one or more of Ni2+, Fe2+, Co2+, Zn2+ or Cu2+; and 1.7≤n≤2, 0.02≤d≤0.2, 0.2≤x≤0.4, 0.9≤y<1 and 0＜z<0.8. The doped manganese-based Prussian white positive electrode material in the present invention is co-doped at the Mn site and the Na site, and using the synergistic effect of M and A doping ions can not only effectively inhibit the Jahn-Teller effect of Mn3+, but can also greatly reduce the content of crystal water in the positive electrode material, and can also have the effects of reducing lattice defects and improving lattice stability and sodium ion transmission kinetics, such that the doped manganese-based Prussian white positive electrode material has a high capacity, good rate capability and good cycling stability.

The invention discloses a solar cell, comprising a substrate having a first surface and a second surface arranged oppositely; first doped regions are arranged in the substrate and are regions close to the first surface, second semiconductor material layers are stacked on the first surface of the substrate, and the first doped regions and the second semiconductor material layers are alternately arranged; a spacer region is arranged between the second semiconductor material layer and the first doped region; the doping type of the second semiconductor material layer is opposite to that of the first doped region; the second semiconductor material layer comprises an ultrathin material layer and a second silicon-containing doped layer which are stacked in sequence; the surface of one side, far away from the second silicon-containing doping layer, of the ultrathin material layer is laminated with the substrate; the first doped region comprises a co-doped region; the co-doped region is connected with a partial region of the second silicon-containing doped layer; the first electrode is in contact and electric connection with the first doped region; and the second electrode is in contact and electrical connection with the second silicon-containing doping layer.

The invention discloses an Mg + Nb co-doped TiO2 giant dielectric ceramic material and a preparation method thereof, and relates to the technical field of giant dielectric materials. The (Mg + Nb) co-doped TiO2 ceramic is successfully prepared by adopting a traditional solid phase method, the performance of the TiO2-based giant dielectric ceramic is regulated and controlled through a new doping strategy, the raw material is single, the preparation process is simple, the cost is low, the repeatability is good, the yield is high, the obtained ceramic material has giant dielectric performance, and the preparation method is suitable for industrial production. The (Mg + Nb) co-doped TiO2 novel giant dielectric ceramic can meet the requirements of a dielectric material with high dielectric constant, low dielectric loss and good temperature and frequency stability, and compared with other widely applied giant dielectric materials, the titanium dioxide-based giant dielectric ceramic has the characteristics of simplicity in preparation and excellent dielectric property.

The invention provides a multi-color Ge-based S, P co-doped barrier impurity band detector and a preparation method thereof, the multi-color Ge-based S, P co-doped barrier impurity band detector comprises a mesa array composed of a plurality of pixels, and the pixels comprise a high-conductivity Ge substrate layer, an absorption layer, a SiNx passivation layer, a high-purity Ge barrier layer and a positive electrode contact layer; a negative electrode is formed on the lower surface of the high-conductivity Ge substrate layer, the absorption layer is located on the upper surface of the high-conductivity Ge substrate layer, and the absorption layer is an S and P co-doped absorption layer; the high-purity Ge barrier layer is located on the upper surface of the absorption layer; the positive electrode contact layer is formed on the upper surface of the high-purity Ge barrier layer, and a positive electrode is formed in a local area on the positive electrode contact layer; pixel isolation grooves are formed in the side faces of the positive electrode contact layer and the barrier layer, and the SiNx passivation layer is located at the bottoms of the pixel isolation grooves. According to the invention, spectral response that a single detector covers 2-150 [mu] m can be realized, and the response bandwidth of the device is greatly improved.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a zinc-sulfur co-doped ZIF-67 derivative composite material as well as a preparation method and application thereof, and belongs to the technical field of advanced oxidation. The composite material is prepared through a coordination-substitution-calcination integrated process. The preparation method comprises the following steps: firstly, mixing a cobalt source and an organic ligand in methanol, and introducing a sulfur source to form a cobalt-based precursor; and drying, grinding with a zinc source, and calcining in an inert atmosphere. According to the method, stable cobalt active sites are replaced by isocrystals of zinc, sulfur doping promotes cobalt and peroxymonosulfate to form a weak oxidizing intermediate, and efficient and high-selectivity degradation of organic pollutants is achieved under the condition that a strong free radical path is not needed. The material is stable in structure and high in water quality interference resistance, is suitable for catalyzing peroxymonosulfate to degrade organic pollutants in a water body, and particularly has remarkable advantages in a complex water body.

The invention relates to the technical field of photoelectricity, and discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and an LED, the light-emitting diode epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, a non-doped GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well layer, an electron blocking layer, and a P-type GaN layer; the stress release layer comprises a C-high Si co-doped nitride layer, a C-Si co-doped nitride layer / C-low Si co-doped nitride layer periodic structure layer, a C-high Si co-doped nitride layer / InGaN layer superlattice structure layer, a low C-high Si co-doped nitride layer and a low C-low Si co-doped nitride layer / InGaN layer superlattice structure layer which are stacked in sequence. According to the light-emitting diode epitaxial wafer provided by the invention, the tensile stress of the GaN epitaxial layer and the mismatch stress of the multi-quantum well layer are released, the polarization effect of the multi-quantum well layer is reduced, and the light-emitting efficiency of the light-emitting diode is improved.

The invention discloses a preparation method of a Ti and Cu co-doped composite nitride film on the surface of fluororubber, which comprises the following steps: cleaning and blow-drying a fluororubber substrate, putting the fluororubber substrate into a magnetron sputtering cavity, pumping to a high vacuum condition, and introducing Ar gas to clean the substrate; and then the modified Ti and Cu co-doped composite nitride film is obtained by adopting a cathode arc magnetic filtration technology. The friction performance of the obtained Ti and Cu co-doped composite nitride thin film is obviously improved, meanwhile, the density of the thin film is kept, and the binding force of the Ti and Cu co-doped composite nitride thin film and a fluororubber substrate is improved; the cathode arc magnetic filtration technology enables the doped elements to be uniformly dispersed in the film, so that the performance of the film can be improved with a small amount of doped elements, and the tribological performance of the film is improved.

The utility model belongs to the technical field of photovoltaic cells, and particularly relates to a back contact photovoltaic cell and a cell assembly thereof, which comprise a silicon substrate, an intrinsic amorphous silicon layer arranged on the backlight surface of the silicon substrate, N-type doped layers and P-type doped layers which are alternately arranged on the outer surface of the intrinsic amorphous silicon layer, and co-doped layers arranged between the N-type doped layers and the P-type doped layers. Conductive film layers and metal electrodes are sequentially arranged on the outer surfaces of the N-type doping layer and the P-type doping layer, and doping sources of the co-doping layer are a doping source of the N-type doping layer and a doping source of the P-type doping layer. The conductivity between the N-type doping layer and the P-type doping layer can be remarkably reduced, and transverse leakage current is avoided, so that the transverse insulativity of the back contact photovoltaic cell is improved, the cell performance such as the cell efficiency and the cell stability is improved, and the manufacturing cost can be reduced.

The invention provides a preparation method of an F and N co-doped NaFePO4 / C electrode material. Uniformly mixing a sodium source, an iron source, a phosphorus source, a carbon source, a nitrogen source and a fluorine source according to a certain proportion, then adding a solvent, carrying out ball milling, drying to obtain a precursor, putting the precursor into a tubular furnace, and carrying out two-step calcination in a protective atmosphere to obtain the F and N co-doped NaFePO4 / C electrode material. The F and N co-doped NaFePO4 / C sodium ion battery positive electrode material is prepared by taking sodium carbonate, ferrous oxalate, ammonium dihydrogen phosphate, citric acid, urea and an F source (one of ammonium fluoride, sodium fluoride and sodium tetrafluoroborate) as raw materials, uniformly mixing the raw materials in a ball milling manner, and then performing two-step calcination in a protective atmosphere to fully react to obtain the F and N co-doped NaFePO4 / C electrode material. As a sodium-ion battery positive electrode material, the synthesis method is simple, easy to operate and suitable for large-scale production. The specific capacity of the sodium ion battery assembled by the F and N co-doped NaFePO4 / C positive plate is remarkably improved, and the F and N co-doped NaFePO4 / C positive plate has potential application value in the sodium ion battery.

The invention provides an anion-cation co-doped solid electrolyte, a preparation method thereof, a solid-state battery and electric equipment, and relates to the field of solid electrolytes. The general chemical formula of the anion-cation co-doped solid electrolyte is Li < 2 + > (4-m) x Zr < 1-x > M < x > X < 6-ayAy, 0 < x < = 0.4, 0 < y < = 0.8, m is the valence state of M, and a is the valence state of A; m comprises a metal doping element with the ion radius larger than that of Zr < 4 + > and the valence state lower than that of Zr; x comprises a halogen element; a comprises one or more of O, S, N and P; the ion radius of A is smaller than X; the valence state of M comprises + 2 and / or + 3. The Li2ZrX6 solid electrolyte is subjected to anion and cation co-ion doping, so that the disorder degree of a crystal structure can be increased, a Li < + > transmission channel is widened, and the ionic conductivity is improved.

This application relates to a P-type gallium oxide and a preparation method thereof. The preparation method of the P-type gallium oxide includes providing a substrate, the material of the substrate includes β-gallium oxide, and a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate. Among them, the shallow-level acceptor impurities are elements of the same group as oxygen. When the deep-level acceptor impurities and the shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level towards the valence band top. This combined effect significantly improves the stability of P-type conductivity of β-gallium oxide.

The invention discloses a Ti / Al co-doped alpha-Fe2O3 photo-anode material and a preparation method thereof in the technical field of photo-anode material preparation, and the preparation method comprises the following steps: taking FeCl3. 6H2O powder, CO (NH2) 2 powder and a TiCl4 aqueous solution as raw materials, preparing a Ti-FeOOH film on FTO (Fluorine-doped Tin Oxide) through a hydrothermal reaction, then soaking the Ti-FeOOH film in an AlCl3 solution for a period of time, and annealing to obtain the Ti / Al co-doped alpha-Fe2O3 photo-anode material. The Ti / Al co-doped alpha-Fe2O3 photo-anode material provided by the invention has relatively high photoelectrochemical efficiency, and has a special nano columnar structure, so that a larger specific surface area is obtained, and the absorption range of visible light is enhanced.

The invention relates to a metal and non-metallic element co-doped high-entropy sulfide solid electrolyte and a preparation method and application thereof. The general formula is Li < 10 + a-b-c > NabX < c > M < 1-d > Q < d > Te < e > O < f > P < 2 > S < 12-e-f-g > Z < g >, wherein X is K, Mg, Ca, Al, Fe or Zn; m is one or more of Ge, Sn and Si; q is at least one of Sb, Bi, As, Y and La; z is at least one of F, Cl, Br and I; wherein 0 lt; b < = 3, 0 < = c < = 1, 0 < = dlt; 1, 0lt; e < = 2, 0lt; f < = 1, 0lt; g < = 3; when the valence of the X element is + 1, a = 2e + d-g; when the valence of the X element is + 2, a is equal to 2e + d-c-g; and when the valence of the X element is + 3, a is equal to 2e + d-2c-g. The high-entropy sulfide solid electrolyte has relatively high ionic conductivity, the room-temperature ionic conductivity of the high-entropy sulfide solid electrolyte can reach 1.85 * 10 <-2 > S cm <-1 >-3.5 * 10 <-2 > S cm <-1 >, and the high-entropy sulfide solid electrolyte has excellent air stability.

The invention discloses a high-performance PbTe-PbS thermoelectric material and a charge balance doping preparation method thereof, and relates to the technical field of thermoelectric materials, Pb particles, Sb particles, Te blocks, S sheets and Ag strips are respectively weighed according to the molar ratio of 0.95: 0.033: 0.9: 0.1: 0.008 and then are loaded into a quartz tube for vacuum tube sealing, and the high-performance PbTe-PbS thermoelectric material is obtained through box-type furnace sintering, cold water quenching, box-type furnace annealing, cold water quenching and rapid hot pressing furnace sintering in sequence. The Sb, S and Ag co-doped PbTe thermoelectric material is obtained. According to the method, a Pb vacancy and an Ag gap are introduced through charge balance doping of Sb2Te3 to dynamically regulate and control chemical potential, the problems of PbS precipitation and carrier transport blocking of an n-type high-concentration doped PbTe-PbS material system are solved, the wide-temperature-range thermoelectric figure of merit of the small-bandwidth PbTe-PbS thermoelectric material is greatly improved, the process is stable and can be scaled, and technical support is provided for commercialization of PbTe-based thermoelectric devices.

The invention provides a double-doped high-density garnet type solid-state electrolyte and a preparation method thereof, and belongs to the technical field of solid-state battery materials, the double-doped high-density garnet type solid-state electrolyte Li6. 4La3-yYbyZr1. 7W0. 3O12 co-doped with W and Yb is adopted, y is 0.05-0.2, the main phase of the double-doped high-density garnet type solid-state electrolyte is of a cubic phase garnet structure, and the main phase of the double-doped high-density garnet type solid-state electrolyte is of a cubic phase structure. A second phase is distributed on the grain boundary, the second phase is LiYbO2, the density reaches 98.1%, the ionic conductivity is 6.54 * 10 <-4 > S / cm, the activation energy is 0.419 eV through double-element synergistic doping to stabilize the cubic phase and regulate the grain boundary structure, the electrolyte is suitable for a high-safety all-solid-state lithium battery, and the problems of phase stability and interface impedance of a traditional LLZO-based electrolyte are solved.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The present invention provides an Al-Nb co-doped lithium lanthanum zirconium oxide, a preparation method thereof, and a lithium ion battery. The chemical formula of the Al-Nb co-doped lithium lanthanum zirconium oxide is Li<subgt;7-y-3x< / subgt;Al<subgt;x< / subgt>La<subgt;3< / subgt>Zr<subgt;2-y< / subgt>Nb<subgt;y< / subgt>O<subgt;12; wherein: 0.05 ≤ x ≤ 0.10, 0.30 ≤ y ≤ 0.50; the Al-Nb co-doped lithium lanthanum zirconium oxide has a cubic phase structure; among them, Nb<supgt;5+ is doped by substituting an inequivalent cation at the Zr<supgt;4+ site; Al<supgt;3+ is concentrated at the grain boundaries of the cubic phase structure, substituting an inequivalent cation for Li<supgt;+, and also forms an amorphous Li-Al-O glass phase with Li<supgt;+. The present invention adopts a modification method of Nb-Al co-doping. By designing the doping ratios of Nb and Al, a pure cubic phase lithium lanthanum zirconium oxide powder is prepared, improving the ionic conductivity and stability of the lithium lanthanum zirconium oxide material.

The invention discloses a SbBr co-doped argyrodite type solid electrolyte and a preparation method thereof.The preparation method comprises the steps that Li2S, LiCl, P2S5 and SbBr3 are weighed according to the stoichiometric ratio and then subjected to ball milling treatment, and mixed powder is obtained; the mixed powder obtained in the step S1 is subjected to compression molding and placed in a muffle furnace to be heated and calcined, and a solid-phase reaction is conducted; and after the reaction is finished, naturally cooling to room temperature, and grinding to obtain the SbBr co-doped argyrodite type solid electrolyte. According to the preparation process of the argyrodite type solid electrolyte, a traditional solid-phase sintering process is adopted, the synthesis process is simple, and the repeatability is high. The ionic conductivity of the argyrodite type solid electrolyte prepared by the process can reach 10.4 mScm <-1 > at room temperature. The argyrodite type solid electrolyte prepared by the invention has high ionic conductivity and excellent air stability, and meets the requirements of industrial large-scale production. When the solid-state electrolyte provided by the invention is assembled into an all-solid-state battery, the cycle life of the all-solid-state battery can be remarkably prolonged due to good compatibility with lithium metal.

The invention discloses a B, N, Fe and O multi-element co-doped porous carbon-based material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving a water-soluble carbohydrate and a water-soluble ferric salt in deionized water according to a certain ratio, adding dimethylamino borane and the like as a boron-nitrogen source, uniformly mixing under the ultrasonic action, and drying to form a carbon precursor compound; and placing the dried carbon precursor compound in a vacuum furnace for high-temperature carbonization to obtain the B, N, Fe and O multi-element co-doped porous carbon-based material. Iron salt, dimethylaminoborane and the like are respectively used as multi-element doping sources and pore-forming is carried out on the carbon matrix at the same time, so that a hierarchical pore structure is obtained. The multi-element co-doped porous carbon-based material with a hierarchical pore structure is constructed by adopting a simple method, abundant electrochemical active sites can be provided by doping multiple heteroatoms, and the electrochemical performance of a carbon matrix is improved. The material can be applied to supercapacitor electrodes and sodium ion battery materials.

The invention relates to the technical field of carbon nanomaterials, particularly discloses a molybdenum-nitrogen co-doped carbon quantum dot, and also discloses application of the molybdenum-nitrogen co-doped carbon quantum dot. The molybdenum-nitrogen co-doped carbon quantum dot provided by the invention is synthesized by taking L-arginine, a molybdenum source and 1-pyrenecarboxaldehyde as precursors through a one-step hydrothermal method. The molybdenum-nitrogen co-doped carbon quantum dot provided by the invention has obvious advantages in detection of Cr2O7 < 2-> and luteolin, and can also be applied to fluorescent ink.

The invention discloses a green light Micro-LED epitaxial structure, a preparation method of the green light Micro-LED epitaxial structure and a green light Micro-LED, and relates to the field of semiconductor photoelectric devices. The epitaxial structure sequentially comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron transport layer, a multi-quantum well layer and a P-type GaN layer; the electron transport layer sequentially comprises a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer, a fifth sub-layer and a sixth sub-layer; the first sub-layer comprises a non-doped Al-containing nitride layer and a Si-doped Al-containing nitride layer which are alternately stacked; the second sub-layer, the third sub-layer and the fourth sub-layer are all C and Si co-doped Ga-containing nitride layers, the fifth sub-layer is a Si-doped AlGaN layer, and the sixth sub-layer comprises Si-doped GaN layers and InGaN layers which are alternately stacked; the Si doping concentration of the second sub-layer, the third sub-layer and the fourth sub-layer is greater than the Si doping concentration of the Si-doped Al nitride layer; and the Si doping concentrations of the second sub-layer, the third sub-layer and the fourth sub-layer are respectively greater than the C doping concentrations thereof. By implementing the invention, the lighting effect and the wavelength uniformity can be improved.

The invention relates to the field of battery electrode materials, and discloses an Al and LiH co-doped silicon negative electrode material and a preparation method and application thereof. The preparation method comprises the following steps: carrying out powder tabletting on Si and LiAlH4, carrying out vacuum heat treatment at 160-190 DEG C for 3-6 hours, and then carrying out vacuum heat treatment at 200-300 DEG C for 2-5 hours to obtain the Al and LiH co-doped silicon negative electrode material. According to the invention, co-doping of metal aluminum and lithium hydride is formed in the silicon negative electrode material through a specific method, so that the lithium ion battery can be endowed with higher initial coulombic efficiency and cycling stability.