139 results about "Co doped" patented technology

The invention belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with high-concentration co-doped regions and a manufacturing method and application thereof.The back contact photovoltaic cell with the high-concentration co-doped regions is characterized in that N-type doped regions and P-type doped regions which are alternately distributed are arranged on the backlight face of an intrinsic amorphous silicon layer, and the high-concentration co-doped regions are arranged between the N-type doped regions and the P-type doped regions; a doping source of the co-doped region comprises doping source phosphorus of the N-type doped region and doping source boron of the P-type doped region, the co-doped region, the doping source of the N-type doped region and the doping source of the P-type doped region form a specific concentration gradient structure, and the specific concentration gradient structure meets the condition that the doping concentration of phosphorus contained in the co-doped region is greater than that of phosphorus contained in the N-type doped region; the doping concentration of boron contained in the co-doped region is greater than the doping concentration of boron in the P-type doped region. The carrier transport and collection efficiency is optimized, the fill factor and open-circuit voltage are improved, the cell conversion efficiency and stability are improved, the preparation process is simple, and multiple times of opening etching are not needed.

The invention discloses an Mg + Nb co-doped TiO2 giant dielectric ceramic material and a preparation method thereof, and relates to the technical field of giant dielectric materials. The (Mg + Nb) co-doped TiO2 ceramic is successfully prepared by adopting a traditional solid phase method, the performance of the TiO2-based giant dielectric ceramic is regulated and controlled through a new doping strategy, the raw material is single, the preparation process is simple, the cost is low, the repeatability is good, the yield is high, the obtained ceramic material has giant dielectric performance, and the preparation method is suitable for industrial production. The (Mg + Nb) co-doped TiO2 novel giant dielectric ceramic can meet the requirements of a dielectric material with high dielectric constant, low dielectric loss and good temperature and frequency stability, and compared with other widely applied giant dielectric materials, the titanium dioxide-based giant dielectric ceramic has the characteristics of simplicity in preparation and excellent dielectric property.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a zinc-sulfur co-doped ZIF-67 derivative composite material as well as a preparation method and application thereof, and belongs to the technical field of advanced oxidation. The composite material is prepared through a coordination-substitution-calcination integrated process. The preparation method comprises the following steps: firstly, mixing a cobalt source and an organic ligand in methanol, and introducing a sulfur source to form a cobalt-based precursor; and drying, grinding with a zinc source, and calcining in an inert atmosphere. According to the method, stable cobalt active sites are replaced by isocrystals of zinc, sulfur doping promotes cobalt and peroxymonosulfate to form a weak oxidizing intermediate, and efficient and high-selectivity degradation of organic pollutants is achieved under the condition that a strong free radical path is not needed. The material is stable in structure and high in water quality interference resistance, is suitable for catalyzing peroxymonosulfate to degrade organic pollutants in a water body, and particularly has remarkable advantages in a complex water body.

The invention discloses a high-performance PbTe-PbS thermoelectric material and a charge balance doping preparation method thereof, and relates to the technical field of thermoelectric materials, Pb particles, Sb particles, Te blocks, S sheets and Ag strips are respectively weighed according to the molar ratio of 0.95: 0.033: 0.9: 0.1: 0.008 and then are loaded into a quartz tube for vacuum tube sealing, and the high-performance PbTe-PbS thermoelectric material is obtained through box-type furnace sintering, cold water quenching, box-type furnace annealing, cold water quenching and rapid hot pressing furnace sintering in sequence. The Sb, S and Ag co-doped PbTe thermoelectric material is obtained. According to the method, a Pb vacancy and an Ag gap are introduced through charge balance doping of Sb2Te3 to dynamically regulate and control chemical potential, the problems of PbS precipitation and carrier transport blocking of an n-type high-concentration doped PbTe-PbS material system are solved, the wide-temperature-range thermoelectric figure of merit of the small-bandwidth PbTe-PbS thermoelectric material is greatly improved, the process is stable and can be scaled, and technical support is provided for commercialization of PbTe-based thermoelectric devices.

The invention discloses a SbBr co-doped argyrodite type solid electrolyte and a preparation method thereof.The preparation method comprises the steps that Li2S, LiCl, P2S5 and SbBr3 are weighed according to the stoichiometric ratio and then subjected to ball milling treatment, and mixed powder is obtained; the mixed powder obtained in the step S1 is subjected to compression molding and placed in a muffle furnace to be heated and calcined, and a solid-phase reaction is conducted; and after the reaction is finished, naturally cooling to room temperature, and grinding to obtain the SbBr co-doped argyrodite type solid electrolyte. According to the preparation process of the argyrodite type solid electrolyte, a traditional solid-phase sintering process is adopted, the synthesis process is simple, and the repeatability is high. The ionic conductivity of the argyrodite type solid electrolyte prepared by the process can reach 10.4 mScm <-1 > at room temperature. The argyrodite type solid electrolyte prepared by the invention has high ionic conductivity and excellent air stability, and meets the requirements of industrial large-scale production. When the solid-state electrolyte provided by the invention is assembled into an all-solid-state battery, the cycle life of the all-solid-state battery can be remarkably prolonged due to good compatibility with lithium metal.

The invention provides a doped cobalt-free lithium-rich manganese-based material as well as a preparation method and application thereof, and belongs to the field of batteries. The invention provides a doped cobalt-free lithium-rich manganese-based material, the chemical formula of the doped cobalt-free lithium-rich manganese-based material is Li < 1.2 > Ni < 0.2 > Mn (0.6-m) GdmO (2-n) Fn, m is more than or equal to 0.01 and less than or equal to 0.05, and n is more than or equal to 0.01 and less than or equal to 0.07. Gd and F are co-doped to synergistically improve the particle combination compactness and the surface roughness of the cobalt-free lithium-rich manganese-based material, so that the specific discharge capacity, the mechanical property, the stability, the first coulombic efficiency and the cycle performance of the battery are improved, and the voltage of the battery is not easy to decline.

The application discloses a kind of Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and preparation method and application thereof, the chemical formula of the energy storage ceramic material is Ag 1‑3x Bi x Nb 1‑3x / 5 Y x O3, wherein 0 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material is in A / B site.The application also specifically discloses preparation method of the Bi 3+ And Y 3+ Co-doped AgNbO3 antiferroelectric energy storage ceramic material and application thereof in preparation of ceramic capacitor.The application prepares AgNbO3-based antiferroelectric energy storage ceramic material with pbcm space group perovskite structure by simple, easy-to-implement technical process, improves its breakdown field strength (E b ) While also reducing the remanent polarization value (P r ), and can effectively improve energy storage density and the stability of antiferroelectric phase at room temperature.

The application discloses a P and O co-doped FeNiRuOx nano catalyst and a preparation method and application thereof, relates to the technical field of electrocatalytic materials, and the catalyst takes Fe, Ni and Ru as metal active centers, reconstructs a surface electronic structure through P and O double anion co-doping, and forms a polygonal nano structure, wherein the mass fraction ranges of Fe, Ni, Ru and P are 5.0-6.0%, 75-78%, 11-12% and 6.5-7.0% respectively. The preparation method comprises the following steps: taking iron acetylacetone, nickel acetylacetone and ruthenium chloride trihydrate as metal sources, synthesizing a precursor through a solvothermal reaction, and realizing P and O co-doping through a sodium hypophosphite assisted solid-phase phosphorization process, and the preparation process is mild. The synthesized catalyst has unique structural advantages, the formed polygonal nano structure has a large specific surface area and rich grain boundary defects, more active sites are exposed, and convenient channels are provided for the mass transfer of reactants and products. The synergistic effect among the polymetals further enhances the catalytic performance.

The application belongs to the field of materials, and discloses a preparation method of high-performance GeTe thermoelectric material, Ge powder, Zr powder, Pb powder, Te powder and Cu2Te powder are respectively taken according to the molar ratio of 0.965-x:0.02:x:0.985:0.015, wherein the value of x is respectively 0, 0.06 and 0.08, then the powders are loaded into a quartz tube for vacuum sealing, and are sequentially subjected to sintering in a box furnace, cold water quenching, annealing in a box furnace, cold water quenching and sintering in a rapid hot-pressing furnace, so as to obtain Zr, Cu2Te and Pb co-doped high-performance GeTe thermoelectric material. The method has simple preparation process, high operability and high repeatability, and the prepared GeTe doped with Zr, Cu2Te and Pb compound has the characteristics of high crystallinity and high density. The method can greatly improve the thermoelectric figure of merit of GeTe thermoelectric material, and the thermoelectric figure of merit is at a high level in the thermoelectric report, so the method has good application prospect.

The invention discloses a Co / Ni co-doped high-nuclear-number titanium-oxygen cluster compound as well as a preparation method and application thereof, and relates to the field of materials and photocatalytic materials. The molecular formula of the Co / Ni co-doped high-nuclear-number titanium oxygen cluster compound is Ti < 14 > M2O21 (OH2) Bz18 (BzH) (Nfm) 2, and the molecular formula of the Co / Ni co-doped high-nuclear-number titanium oxygen cluster compound is Ti < 14 > CoNi; wherein M represents a co-doped metal center of Co and Ni, Bz is a benzoic acid ligand, and Nfm is an N-formylmorpholine molecule. According to the Co / Ni co-doped high-nuclear-number titanium oxygen cluster compound prepared by the preparation method disclosed by the invention, due to co-doping of Co and Ni, the high-nuclear-number titanium oxygen cluster compound has relatively high catalytic performance and selectivity and has excellent stability; when the photocatalyst is used for preparing CO through photocatalysis of CO2, the selectivity of the product CO is greater than 89%, and no by-product (such as CH4 and HCOOH) is generated.

The application belongs to the technical field of electromagnetic wave absorbing materials, and particularly relates to a co-doped mesoporous carbon sphere wave absorbing material, a preparation method and an application. The preparation method comprises the following steps: aniline is added into a colloidal silica hydrochloric acid solution and uniformly mixed to obtain a mixed solution; then, ammonium persulfate hydrochloric acid solution is added into the mixed solution and uniformly mixed; drying is performed to obtain a precursor; the precursor is calcined under a protective atmosphere to obtain an intermediate; then, the intermediate and a sodium hydroxide solution are mixed, heated, and treated to obtain the co-doped mesoporous carbon sphere wave absorbing material. The calcination method comprises the following steps: the precursor is heated to 250-350 DEG C under a protective atmosphere and then heated to 700-900 DEG C for calcination. The co-doped mesoporous carbon sphere wave absorbing material has excellent wave absorbing performance.

The invention belongs to the technical field of inorganic scintillator materials, and particularly relates to a multi-element co-doped yttrium lutetium silicate scintillator and a preparation method and application thereof, and the material has excellent comprehensive performance of high light output, short decay time, high radiation hardness, high matching degree of emission spectrum and novel photoelectric sensors and the like. The invention further relates to a preparation method of the scintillator material and application of the scintillator material in radiation detection fields such as positron emission tomography (PET), time flight PET (TOF-PET), interaction depth PET (DOI-PET), single photon emission computed tomography (SPECT), high-energy physical experiments, nuclear medicine imaging, industrial nondestructive inspection, safety detection (such as luggage and cargo container inspection) and the like.

The invention discloses an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic materials. A preparation method of an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation comprises the following steps: depositing an Se-doped film on the surface of a silicon substrate by adopting a vacuum deposition process, and then preparing black silicon with a micro-nano composite structure through picosecond laser scanning; and performing sulfur ion implantation modification on the black silicon with the micro-nano composite structure, and annealing to prepare the S and Se co-doped silicon-based near-infrared photosensitive material. Through a picosecond laser-ion implantation composite doping process, the problems of thermal damage and lattice defects in a traditional doping method are successfully solved, and preparation of the S and Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defects is realized. The light absorptivity of the material at the wave band of 1300nm is remarkably improved, a process scheme capable of realizing mass production is provided for third-generation photovoltaic devices and high-performance infrared detectors, and the material has important application value and wide market prospects.

The invention discloses a cobalt-doped ruthenium dioxide nanoparticle material as well as a preparation method and application thereof, and relates to a ruthenium dioxide nanoparticle material as well as a preparation method and application thereof. The nano-particle cluster is formed by irregularly distributing nano-particles; the nanoparticles have a single-phase crystal structure, and the spacing distribution of {110} crystal faces is 0.315 nm; the material is composed of three elements of Co, Ru and O, wherein Co is doped into RuO2 to form Co < 0.3 > Ru0. 7O2 nanoparticles; the material is of an octahedral structure, and Ru sites are replaced by Co doping; the chemical valence state of Ru on the surface of the material is a mixed valence state of + 3 and + 4; charge transfer occurs among three ions of Co, Ru and O, so that Ru is in a lower oxidation state. The cobalt-doped ruthenium dioxide nanoparticle material is used for electrolyzing water to produce hydrogen, and shows 2500-hour long-term stability under the current density of 10 mAcm <-2 >.

The invention discloses an up-conversion luminescence time sequence regulation color-changing material, color-changing ink and a preparation method and application thereof, the chemical general formula of the material is SrMoO4: xYb < 3 + >, yHo < 3 + > and zNa < + >, x is the molar doping amount of Yb < 3 + >, y is the molar doping amount of Ho < 3 + >, z is the molar doping amount of Na < + >, 0.10 < = x < = 0.40, 0.01 < = y < = 0.03, and 0.21 < = z < = 0.31. According to the material, under the condition of charge compensation ion Na < + > co-doping, the solid solubility of sensitizer ions Yb < 3 + > in SrMoO4 crystal lattices is remarkably improved, and under the condition of Na < + > excessive charge compensation, the material is remarkably superior to the upconversion luminescence effect of other charge compensation enhanced heterovalent doping systems reported in literatures; the color-changing ink for advanced dynamic anti-counterfeiting and the application method thereof are designed and developed by combining the remarkably enhanced up-conversion luminescence and the excellent time sequence regulation color-changing characteristic of the material, and the color-changing ink has a wide application prospect in the field of dynamic fluorescent anti-counterfeiting.

The application provides a multiple modified positive electrode precursor, a preparation method of the multiple modified positive electrode precursor, a positive electrode material and a battery, and the multiple modified positive electrode precursor comprises a zirconium-doped precursor core, a zirconium-scandium co-doped precursor transition layer and a scandium-doped precursor coating layer which are sequentially coated on the surface of the zirconium-doped precursor core; the concentration of zirconium elements in the zirconium-scandium co-doped precursor transition layer decreases from the inside to the outside, and the concentration of scandium elements in the zirconium-scandium co-doped precursor transition layer increases from the inside to the outside. According to the application, zirconium and scandium are selectively and gradiently doped in the inside and the shell of the positive electrode precursor, and multiple components are synergistically used, so that the generation of micro-cracks can be inhibited from the inside, the diffusion resistance of lithium ions is reduced, surface lattice oxygen can be stabilized during high-voltage charging, oxygen release is inhibited, and the structural stability of the prepared positive electrode material in the cycle process is improved.

This invention belongs to the field of solid oxide electrolysis cell technology, and discloses a cobalt-iron co-doped cerium-based cathode material and its preparation and application. Preparation method: 1) A mixed solution of cobalt precursor, iron precursor, cerium precursor, and gadolinium precursor is prepared using water; glycine is added as a complexing agent, and the mixture is homogeneous; the mixture is heated to 300-400℃, stirred, and evaporated until a spontaneous combustion reaction occurs, and the precursor powder is collected; 2) The precursor powder is heat-treated in air to obtain the cobalt-iron co-doped cerium-based cathode material. The iron and cobalt co-doping in this invention produces an interaction: iron facilitates the formation of Ce. surf. 3+ -Oxygen vacancy defects enhance CO2 adsorption activation, while cobalt lowers the oxygen ion migration barrier and increases electronic conductivity, simultaneously improving surface reaction kinetics and bulk transport properties. The cathode material of this invention, used in solid oxide electrolysis cells, exhibits excellent CO2 electrolysis performance and long-term stability, and its preparation process is simple.

The invention belongs to the field of X-ray long-afterglow luminescent materials. The technical problems that traditional Pr < 3 + > doped fluoride is insufficient in afterglow performance, X-ray imaging depends on continuous irradiation, and color scattering noisy points exist are solved. The NaLuF4: Mg / Cs / Pr fluoride material is prepared by adopting a Cs < + >-Mg < 2 + > co-doping regulation strategy, the material is synthesized by an oleic acid-octadecene liquid phase method, and the X-ray excitation afterglow intensity of Pr < 3 + > is improved by about 110 times by utilizing the synergistic effect that Cs < + > enhances X-ray absorption and Mg < 2 + > optimizes a carrier shallow-deep trap level; the material is prepared into the high-light-transmittance rare earth nano flexible scintillation screen with the resolution ratio of 20.01 lp / mm. According to the invention, zero-noisy-point time-delay imaging after low-dose X-ray transient irradiation is realized, continuous irradiation is not needed, the radiation dose is lower, and the method is mainly applied to the field of X-ray time-delay imaging of low-dose medical diagnosis and industrial nondestructive testing. The method does not need continuous X-ray irradiation, and has important application value in the fields of medical diagnosis, industrial nondestructive testing and the like.

The invention relates to the technical field of electrochemical materials, and particularly discloses Mo2C loaded N and P co-doped carbon nanospheres as well as a preparation method and application thereof. The preparation method comprises the following steps: by taking 3-aminophenol-formaldehyde phenolic resin nanospheres as a carbon precursor, forming a uniform Mo-EDTA (Ethylene Diamine Tetraacetic Acid) complex by utilizing a polydentate coordination effect of EDTA on Mo ions; when one-step carbonization is carried out in an inert atmosphere, EDTA serves as a molecular cage to inhibit Mo2C nano-particle agglomeration and realize monodisperse anchoring, and N and P sources are released in situ to complete double-heteroatom uniform doping. The catalyst shows excellent catalytic performance in a water electrolysis hydrogen production performance test: in a 1M KOH electrolyte, when the current density is 10mA / cm < 2 >, the overpotential is less than or equal to 80mV, and the Tafel slope is 95-105mV / dec. The long-term stability is good, hydrogen evolution is continuously conducted for 23 h under the current density of 50 mA / cm < 2 >, and the current retention rate is larger than or equal to 90%.

The application belongs to the technical field of back contact photovoltaic cells, and particularly relates to a back contact photovoltaic cell with a high-concentration co-doped region, a preparation method and application, which comprises setting N-type doped regions and P-type doped regions which are alternately distributed on the back light surface of an intrinsic amorphous silicon layer, and setting a high-concentration co-doped region between the N-type doped regions and the P-type doped regions, wherein the doping source of the co-doped region comprises a doping source phosphorus of the N-type doped region and a doping source boron of the P-type doped region, the co-doped region and the doping sources of the N-type doped regions and the P-type doped regions form a specific concentration gradient structure, and the specific concentration gradient structure satisfies that the doping concentration of phosphorus contained in the co-doped region is greater than the phosphorus doping concentration in the N-type doped region, and the doping concentration of boron contained in the co-doped region is greater than the boron doping concentration in the P-type doped region. The application optimizes the carrier transport and collection efficiency, improves the fill factor and open-circuit voltage, improves the cell conversion efficiency and stability, and the preparation process is simple and does not need multiple etching openings.

The composite-doped co-coated high-voltage cathode material of this invention, based on traditional nickel-cobalt-manganese materials, adopts a composite modification method of multi-element co-doping and coating, with Ce2O as the main component. 12 Co-doping modification was performed using W3, MgWO4, AlF3, and θ-Al2O3, and Ce2O was used. 12 W3 and MgWO4 are used as coating agents for coating modification, and θ-Al2O3 with a more stable structure is further used to form a secondary coating. Through the synergistic effect of W / Mg / Ce / Al / F doping and coating and anion and cation doping, the structural stability, thermal stability, rate / cycle / storage performance, DCIR and other properties of high voltage ternary cathode materials are improved. It has the advantages of more stable layered structure, higher electronic conductivity, better rate, longer cycle performance and storage and lower DCIR.

The invention relates to the technical field of photocatalysis, in particular to a Yb < 3 + > / Er < 3 + > co-doped full-spectrum response Ti-MOF / BiOBr S type heterojunction as well as a preparation method and application thereof. The invention provides an S-type heterojunction composite catalyst, which is mainly prepared from squaric acid, a titanium source, Yb < 3 + > and Er < 3 + > doped BiOBr nanosheets, and the mass ratio of the BiOBr nanosheets in the catalyst is 60%-95%. The high specific surface area of the IEF-11 is beneficial to pollutant enrichment, and the addition of the nanosheet can expand the photoresponse range and can be used as an electron trapping agent, so that the sunlight utilization rate and the photocatalytic performance are improved; the constructed S-type heterojunction can promote separation of photon-generated carriers, and meanwhile, the strong oxidation-reduction capacity of a composite system is reserved. The catalyst has the capabilities of full-spectrum response, efficient degradation of organic pollutants and inactivation of microorganisms, and has a wide application prospect.

A workpiece includes a doped p-type substrate, a co-doped P+ epitaxial silicon layer disposed on the doped p-type substrate, and a boron-doped P− epitaxial layer disposed on the co-doped P+ epitaxial silicon layer. The co-doped P+ epitaxial silicon layer is co-doped with germanium and boron. A ratio of the germanium to the boron in the co-doped P+ epitaxial silicon layer may be from 10 to 16.

The invention relates to a perovskite battery based on a co-doped nickel oxide-based hole transport layer and a preparation method of the perovskite battery. The perovskite battery sequentially comprises a conductive substrate, a hole transport layer, an ionic liquid modification layer, a perovskite active layer, an electron transport layer, a hole barrier layer and a metal electrode layer from bottom to top, and the hole transport layer is a Li-Nb co-doped nickel oxide thin film. According to the invention, by introducing the Li and Nb elements, the hole concentration and mobility can be synergistically improved, the energy level arrangement can be optimized, the morphology and crystallinity of the thin film can be improved, the problems of insufficient conductivity, energy band mismatch, interface recombination and the like of NiO-based HTL can be solved, and finally, the perovskite solar cell with higher efficiency, stability and reliability can be realized. The ionic liquid modification layer is also introduced, so that the interface contact between the thin film and the perovskite material can be improved, the contact side reaction is inhibited, and the service life of the perovskite battery is prolonged.

The invention provides an alkali metal halide gradient doped perovskite light absorption layer and a full-vacuum preparation method and application thereof, and belongs to the technical field of perovskite materials. The technical concept of gradient doping-step deposition-synergistic passivation is provided, a vacuum evaporation mode is adopted, and the multi-dimensional contradiction between materials and the technology is overcome by combining alkali metal gradient doping and halogen / pseudo-halogen synergistic passivation; an inorganic framework deposition-organic phase vapor infiltration two-step method is adopted in the process level, temperature conflicts are avoided, and the density of the thin film is improved; rb < + > gradient doping is introduced in material design to form a built-in electric field to inhibit Br <-> migration, and meanwhile, a [K-F] < + + > coordination network and Lewis acid-base passivation sites are constructed through K < + > / F- / SCN <-> co-doping, so that the defect density is reduced.

The invention discloses a gallium-aluminum co-doped n-ZnO / p-GaN heterojunction and preparation and application thereof, and belongs to the technical field of semiconductors. Comprising a sapphire substrate, a GaN buffer layer, a u-GaN layer, a p-GaN layer, a ZnO seed crystal layer and gallium-aluminum co-doped ZnO nanorods. According to the method, after growth of a p-GaN layer is finished, a high-temperature decomposition step is carried out to form porous GaN, a ZnO seed layer is spin-coated, then a high-temperature annealing step is carried out to grow ZnO nanorods, the properties that the GaN porous structure increases the contact area of heterojunctions and forms a three-dimensional heterostructure are utilized, and by means of application of the ZnO seed layer, the three-dimensional heterojunction structure is formed, so that the yield of the ZnO nanorods is improved. Compared with the prior art, the preparation method has the advantages that the requirement of nanorod growth on the lattice matching degree of the substrate is lowered, the energy band structure between n-ZnO and p-GaN is effectively regulated and controlled through gallium-aluminum doping, in addition, the GaN porous structure provides growth conditions for vertical arrangement growth of nanorods, the photosensitive area is increased, and high photoelectric conversion efficiency is achieved.

The invention discloses a method for preparing an electrode material of a supercapacitor by directionally etching ZIF-8 and anchoring nickel-iron bimetal by using xylenol orange (XO). The invention aims to provide better capacitance performance, rate capability and cycling stability when being used as a supercapacitor electrode. The preparation method mainly comprises the following steps: 1, preparing ZIF-8; 2, performing oriented etching on the ZIF-8 by xylenol orange to prepare porous hollow EZIF-8; (3) preparing a nickel and iron double metal doped EZIF-8 precursor; and 4, pyrolyzing the precursor to prepare the bimetallic doped porous carbon material. The Ni, Fe and N co-doped porous carbon material prepared by the method disclosed by the invention has a hierarchical pore structure and atomic-scale dispersed active sites, the porous hollow structure provides sufficient channels for electron and ion transmission, the surface wettability is optimized by heteroatom doping, and electrolyte permeation and efficient charge transmission are facilitated. Meanwhile, according to the preparation method adopting ZIF-8 as the template for etching, doping and pyrolysis, the reaction condition is mild, the process is controllable, and accurate regulation and control of the material structure can be achieved. The prepared ENC50-900 material is used as a supercapacitor electrode, the specific capacitance reaches 347 F g under the current density of 1 A g, the capacitance retention rate is 69% under the current density of 20 A g, and the capacity retention rate is still 96% after 10000 times of cycle test under the current density of 10 A g.

The invention discloses a GaCu co-doped sintered permanent magnet and a production process, the GaCu co-doped sintered permanent magnet comprises the following components in percentage by weight: 25-35 wt% of Ce, 15-25 wt% of Nd + Pr, 0.9-1.1 wt% of B, 0.2-0.3 wt% of Ga, 0.1-0.2 wt% of Cu and the balance of Fe, and the production process comprises the following steps: S1, smelting raw materials; s2, powder is prepared, treatment is conducted for 2.5-3.5 hours under the hydrogen atmosphere at the pressure of 0.1-0.2 MPa and the temperature of 300 DEG C, then airflow milling is conducted under inert gas protection, and anisotropic powder with the average particle size being 3-5 microns is obtained; s3, pressing and forming; and S4, vacuum sintering: pre-sintering the pressed blank under a vacuum condition at the pre-sintering temperature of 600-700 DEG C and the heat preservation time of 0.8-1.2 hours, continuously heating to 1040-1080 DEG C, preserving the heat for 2-4 hours, then cooling to 500-600 DEG C, preserving the heat for 1-2 hours, and cooling to obtain the GaCu co-doped sintered permanent magnet. GaCu is doped, and spontaneous passivation of a grain boundary is realized in the vacuum sintering and low-temperature annealing processes, so that the corrosion resistance and the structural stability of the magnet are remarkably improved under the plating-free condition.

This invention provides a high-nickel single-crystal layered cathode material with dual elemental co-doping in different crystal orientations and its preparation method. The cathode material has the general formula I: Li w Ni x Co y Mn z Ti m Zr n O2. In cathode materials, by competitively layering Ti and Zr elements into high-nickel ternary cathode materials, uniform doping of Ti and Zr elements in the bulk phase of high-nickel cathode materials is achieved. This results in the synergistic effect of suppressing bulk phase transitions and surface reconstruction during cycling, thereby improving the cycling stability of high-nickel cathode materials.