732 results about "Electronic band structure" patented technology

Disclosed herein is a structure of opto-electronic package having a Si-substrate. The Si-substrates are manufactured in batch utilizing the micro-electromechanical processes or the semiconductor processes, so that these Si-substrates are made with great precision and full of varieties. Based on the material characteristic of the Si-substrate, and the configuration of the components, such as the connectors, opto-electronic devices, depressions, solder bumps, etc., the present invention can improve the optical effect, the heat dissipating effect, and the reliability of the opto-electronic package structure, and simplifies the complexity of the opto-electronic package structure.

A method of forming an AlInGaN alloy-based electronic or optoelectronic device structure on a nitride substrate and subsequent removal of the substrate. An AlInGaN alloy-based electronic or optoelectronic device structure formed on a nitride substrate is freed from the substrate on which it was grown.

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5 k_BT, wherein k_B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl₂O₄ spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

A method of forming a conductive structure having a length that is less than the length define by photolithographic patterning. A silicon layer (12) is formed in a MeOx dielectric layer (11) is photolithographically patterned to a predetermined first length. A metal layer (31) is formed conformally to at least the sidewalls of the silicon layer and then is reacted with the silicon to form a metal silicide (41). In particular, metal silicide abutments (411,412) are formed contiguous to sidewalls (421,422) of a reduced conductor (42). The remaining metal layer and the metal silicide are etched away, resulting in a conductor having predetermined second length that is less than the predetermined first length.

A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.

A microwave filter is formed from an electromagnetic band gap structure. The electromagnetic band gap structure includes a periodic array of metal features (16, 42, 44, 50) formed within a dielectric matrix (14, 52). A defect feature (17, 48) is formed within the periodic array of metal features (16, 42, 44, 50) in order to create a pass band within a stop band region.

A device is described based on flexible photonic crystal, which is comprised of a periodic array of high index dielectric material embedded in a flexible polymer. Dynamic, real time tunability is achieved by the application of a variable force with a MEMS actuator or other means. The force induces changes in the crystal structure of the photonic crystal, and consequently modifies the photonic band structure. The concept was demonstrated by a theoretical investigation on the effect of mechanical stress on the anomalous refraction behavior of the flexible PC, and a very wide tunability in beam propagation direction was observed. Experimental studies on fabrication and characterizations of the flexible photonic crystal structures were also carried out. High quality flexible PC structures were fabricated by e-beam lithography and anisotropic etching processes.

An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.

A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.

The invention discloses a preparation method of a multiple quantum well structure for a photoelectric device. The multiple quantum well structure comprises n quantum well structures which are overlapped in sequence, and each quantum well structure is formed by sequential growth of potential well layers and potential barriers, wherein the growth of each potential well layer comprises the following steps: 1, first growing an NixGa1-xN potential well layer, wherein x is more than 0.1 and less than 0.45; 2, growing a GaN insert layer; and 3, growing the InxGa1-xN potential well layer, wherein x is more than 0.1 and less than 0.45. When the potential well layer grows, one or more than two of GaN insert layers with energy band width different from that of the InxGa1-xN potential well layer and an In treatment layer grow alternately. On the one hand, the In treatment layer can stabilize the structure of the InxGa1-xN, ensures the stability of quantum well components, and controls the stability and consistency of wavelength; on the other hand, the GaN insert layer disturbs the energy band structure of a quantum well region to improve the composite rate of electron hole pairs, so that the internal quantum efficiency of device illumination is improved, and as the brightness is improved, the life test performance of the device can be improved.

Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

The invention discloses a method for preparing a thin-film solar photovoltaic cell with a copper indium gallium selenide (CIGS) nano wire array structure. The method comprises the following steps of: growing a large-area cuprous sulfide or copper sulfide nano wire array by adopting a gas-solid reaction method, and converting the cuprous sulfide or copper sulfide nano wire array into a CIGS nano wire array by physical vapor deposition and heat treatment methods. The component, the phase structure and the energy band structure of the semiconductor nano wire array can be regulated by controlling the categories of deposition elements, the deposition sequence, the deposition process, post treatment and the like, so that solar photovoltaic cells with different structures and properties are prepared. Through the cell, light reflection is reduced, light absorption is increased, the probability of producing current carriers can be increased, the probability of recombination of holes and electrons is reduced, and the photoelectric conversion efficiency is greatly improved. The method is low in cost, the preparation processes are controllable, the prepared nano wire array is uniform in structure distribution, and preparation of the nano structural thin-film solar photovoltaic cell with large area and high photoelectric conversion efficiency can be realized.

The invention discloses an efficient blue-light quantum dot light emitting diode and a preparation method therefor. The diode comprises a negative electrode, an electron transport layer, a surface modification layer, a quantum dot light emitting layer, a hole transport layer, a hole injection layer and a positive electrode formed on a substrate, wherein the negative electrode is placed at the bottom layer; the electron transport layer, the surface modification layer, the quantum dot light emitting layer, the hole transport layer, the hole injection layer and the positive electrode are arranged from the bottom up in sequence; and the surface modification layer can balance the electron and hole injection of the quantum dot light emitting diode by modification of the electron transport layer on the lower side, so as to improve the light emitting efficiency of a device. By adoption of the efficient blue-light quantum dot light emitting diode and the preparation method therefor, the light emitting efficiency of the device can be effectively improved, and the service life of the device is prolonged and other performance of the device is improved.