738 results about "Electronic band structure" patented technology

A tiled display device is formed from display tiles having picture element (pixel) positions defined up to the edge of the tiles. Each pixel position has an organic light-emitting diode (OLED) active area which occupies approximately 25 percent of the pixel area. Each tile includes a memory which stores display data, and pixel driving circuitry which controls the scanning and illumination of the pixels on the tile. The pixel driving circuitry is located on the back side of the tile and connections to pixel electrodes on the front side of the tile are made by vias which pass through portions of selected ones of the pixel areas which are not occupied by the active pixel material. The tiles are to formed in two parts, an electronics section and a display section. Each of these parts includes connecting pads which cover several pixel positions. Each connecting pad makes an electrical connection to only one row electrode or column electrode. The connecting pads on the display section are electrically connected and physically joined to corresponding connecting pads on the electronics section to form a complete tile. Each tile has a glass substrate on the front of the tile. Black matrix lines are formed on the front of the glass substrate and the tiles are joined by mullions which have the same appearance as the black-matrix lines. Alternatively, the black matrix lines may be formed on the inside surface of an optical integrating plate and the tiles may be affixed to the integrating plate such that the edges of the joined tiles are covered by the black-matrix lines. A cathodoluminescent tile structure is formed from individual tiles that have multiple phosphor areas, a single emissive cathode and horizontal and vertical electrostatic deflecting grids which deflect the electron beam produced by the single cathode onto multiple ones of the phosphor areas.

A MOSFET has greatly reduced leakage current between the gate electrode and the channel, source and drain regions. The gate electrode materials have lower electron affinities than the channel, source and drain regions. Gate electrode materials with negative electron affinities can also be used. The use of these gate electrode materials enables the band structures of the gate electrode and the other regions to be aligned in a manner that eliminates tunneling states for carriers tunneling between the gate and the body of the device.

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.

The present invention relates to systems, materials and methods for the formation of conducting, semiconducting, and dielectric layers, structures and devices from suspensions of nanoparticles. Drop-on-demand systems are used in some embodiments to fabricate various electronic structures including conductors, capacitors, FETs. Selective laser ablation is used in some embodiments to pattern more precisely the circuit elements and to form small channel devices.

A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.

An out of the box signage kit facilitates in field conversion of a static billboard having an anchored planar mounting structure into a large format billboard type electronic sign that includes a plurality of interchangeable weatherized display modules; a plurality of hand mountable interchangeable structural frames for supporting the plurality of weatherized display modules, each structural frame having a back portion for mounting to a frontside of the anchored planar mounting structure and a front portion defining a plurality of bay members for receiving corresponding ones of said plurality of weatherized display modules; and a plurality of interchangeable wire harnesses, each individual wire harness including a first end for coupling to a power source mounted on a backside of the anchored planar mounting structure, each individual wire harness having a plurality of power extensions for coupling the power source to at least one of the display modules.

The invention provides a semiconductor ultraviolet source device. A quantum well and a quantum barrier in the epitaxial growth structure of the device have component gradients in the epitaxial growth direction, and the directions of the component gradients of the quantum well and the quantum barrier in the epitaxial growth direction are opposite. Heterostructures such as the energy band structures of multiple quantum wells are regulated through using the variation of the Al (aluminum) component of AlInGaN material, the energy band edge inclination of the quantum well and the quantum barrier is reduced, electrons and holes injected to the barrier are reduced, the positive working voltage of an ultraviolet LED (light emitting diode) is reduced, and the light emitting efficiency of the quantum well is improved.