327 results about "Electronic band structure" patented technology

An electrode structure for a solid-state or semi-solid-state battery is provided in which NCM electrode particles coated with an interphase layer and a nitrogen-containing carbon layer are disposed. [Solution] The NCM electrode particles comprise NCM (nickel-cobalt-manganese oxide) particles (15), primary particles (30) that coat the outer surfaces of the NCM particles, an interphase layer (16) that includes a glass phase layer (241) and a plurality of ceramic particles (242), and a nitrogen-containing carbon layer (35) that coats the exterior of the primary particles. Nitrogen-doped carbon molecules in the nitrogen-containing carbon layer aid in the conduction of electrons and lithium ions, modifying the electrical potential of the NCM particles. The nitrogen-containing carbon layer is formed by coating the surfaces of the primary particles with a nitrogen-containing polymer material and calcining the material in an inert atmosphere. Conjugated bonds are formed between the carbon and nitrogen, modifying the energy band structure, reducing the energy required for electrons to transition to the conduction band, and improving overall electronic conductivity.

The invention discloses a virtualization test and system-process collaborative optimization method for influence of residual stress of a post-process of core particle integration on performance of a transistor device. Starting from core particle integration back-end process simulation and a quantum transport equation, the influence of the residual stress of the core particle integration back-end process on the performance of the transistor device is studied, and the performance indexes such as a current-voltage curve, carrier distribution and state density of the device are evaluated. The method mainly comprises the following steps: (1) modeling and simulating a core particle integration subsequent process to determine residual stress caused by the core particle integration subsequent process; (2) combining the residual stress of the core particle integration post-process with a deformation potential theory, and substituting into quantum transport simulation to consider the influence of the stress on the energy band structure of the device; and (3) analyzing a simulation result, and realizing virtualization test and system-technology collaborative optimization of the influence of the residual stress of the post-process of core particle integration on the performance of the transistor device. The method has important application value in the fields of technological process system-technology collaborative optimization and semiconductor device simulation and design.

The invention discloses preparation of a phenanthroline-based covalent organic framework photocatalyst and application of the phenanthroline-based covalent organic framework photocatalyst in photocatalytic production of hydrogen peroxide. According to the method, a hydrogen peroxide production experiment is carried out in a water-oxygen system or a benzyl alcohol-water-oxygen system by taking phenanthroline-based COF as a photocatalyst. According to the invention, through regulation and control of molecular flatness engineering, an electron-rich phenanthroline unit (Phen) anchored by a pyridine expansion plane and electron-deficient triazine (TTA) are integrated into a COF skeleton, and a novel electron donor-acceptor (D-A) type COF is synthesized. The COF has the advantages of proper energy band structure, excellent photo-induced electron and hole separation efficiency, strong D-A interaction, good hydrophilicity and the like, and the efficiency of photocatalytic hydrogen peroxide production reaction within a short time is greatly improved. The invention provides a use method of the COF photocatalyst which is cheap, convenient, rapid, efficient and environment-friendly, and has a potential application prospect.

The invention discloses a perovskite solar cell based on diamine molten salt surface modification and a preparation method thereof, and the perovskite solar cell comprises a transparent conductive substrate layer, a hole transport layer, a perovskite light absorption layer, a surface modification layer, an electron transport layer, an interface buffer layer and an electrode layer from bottom to top. Or a transparent conductive substrate layer, an interface buffer layer, a surface modification layer, a perovskite light absorption layer, a hole transport layer and an electrode layer, wherein the surface modification layer is diamine molten salt. According to the invention, the surface of the perovskite cell is modified by using diamine molten salt, and by inducing a gradient energy band structure and ordered arrangement of molecules, optimizing charge transfer and realizing interface energy band alignment, compact stacking of a perovskite film is promoted, grain boundary defects are reduced, and the surface roughness is reduced; the light capture capability and the charge carrier mobility of the perovskite thin film are remarkably improved, and a new thought is provided for the development of a high-efficiency and high-stability perovskite solar cell.

The invention belongs to the technical field of photocatalytic materials, and discloses a preparation method of a BiOCl / BiOI composite photocatalyst for visible light degradation of rhodamine B. The energy band structure of BiOCl is regulated and controlled in cooperation with BiOI, and efficient photocatalytic decoloration of rhodamine B with wide spectral response is achieved through S-type interface charge transfer. A petal-shaped BiOCl / BiOI heterojunction with R = 8: 1, a BiOCl0. 88I0. 12 solid solution and a BiOCl0. 8I0. 2 solid solution show excellent visible light catalytic activity, and about 92.52% of rhodamine B molecules, 99.7% of rhodamine B molecules and 99.7% of rhodamine B molecules are respectively degraded by the BiOCl / BiOI heterojunction and the BiOCl0. 88I0. 12 solid solution after being irradiated by visible light for 10 minutes. The catalytic reaction accords with the two-stage one-stage kinetic law, and high photocatalytic efficiency can still be maintained after five times of circulation. The single BiOCl and BiOI respectively degrade about 64.3% and 10.02% of rhodamine B molecules under the same light reaction condition, and the catalytic reaction follows a first-level kinetic model. The preparation method has the advantages of being low in preparation temperature, simple in technological process, stable in chemical property and the like, the large-scale two-dimensional micron / nanosheet and the three-dimensional self-assembly structure of the large-scale two-dimensional micron / nanosheet can be obtained only through a hydrothermal and water bath synthesis technology, and the preparation method has great application value in the field of visible light degradation of organic pollutants.

The invention discloses a double-layer structure composite material with rapid photo-thermal response and high anisotropic heat conductivity ratio and a preparation method and application thereof.Graphene sheets and thermoplastic polyurethane are compounded, a melt blending processing technology is combined, and a double-nozzle FDM 3D printing technology is utilized; and the high-heat-conductivity graphene-polyurethane layer is combined with the heat-insulating pure polyurethane layer to form an anisotropic heat conduction structure. The'heat conduction-heat insulation 'double-layer design has originality in the field of heat management, and the problem that efficient heat conduction and heat retention are difficult to consider by traditional materials is solved. The unique electronic energy band structure of the graphene enables the graphene to effectively absorb light energy in a wide spectral range, so that the prepared material can realize efficient and rapid photothermal conversion. In addition, compared with a traditional material processing mode, the FDM 3D printing technology has the advantages of being low in cost, easy to operate, diversified in material, free in design degree and the like, is suitable for large-scale industrial production and has wide application prospects.

The invention relates to a double-frequency filtering metasurface design method based on topological optimization. The method comprises the following steps: establishing a two-dimensional simulation model comprising a double-frequency filtering metasurface matrix and a scatterer; according to a preset target forbidden band, taking a forbidden band frequency covering frequency doubling target interval as a fitness function, coding the binary matrix representing material distribution as a chromosome to perform optimization iteration of the chromosome, and obtaining the chromosome with the maximum fitness function value; in optimization iteration, material distribution corresponding to chromosomes is constructed on a two-dimensional simulation model, an energy band structure of the two-dimensional simulation model is obtained, and a fitness function value is calculated; and according to the binary matrix of the chromosome with the maximum fitness function value, outputting final optimized material distribution of the double-frequency filtering metasurface, and performing performance verification on a result through simulation to obtain the double-frequency filtering metasurface of which a fundamental frequency wave can be blocked through a double-frequency wave. Compared with the prior art, systematic optimization of the frequency doubled sound filtering scene is realized.

The invention discloses a high-performance layered nitride thermoelectric material screening method and system. The method comprises the following steps: acquiring a series of crystal structures of initial layered nitride; carrying out magnetic test on the material by utilizing first principle calculation, and selecting a non-magnetic material; carrying out structure optimization on the non-magnetic material, carrying out static calculation and electron energy band structure calculation after calculation convergence, and selecting a material with a band gap range of 0.1-3 eV and high energy band structure degeneracy; calculating partial charge density of the material, and judging whether two-dimensional electron gas exists or not, namely, alternate occurrence of a conductive layer and an insulating layer; stability judgment: carrying out phonon spectrum and molecular dynamics simulation calculation on the material, and selecting the material with phonon spectrum without imaginary frequency and stable dynamics; the heat transport performance of the material is calculated, the lattice heat conductivity and Green Ehson parameters are obtained, and the material with high non-harmony is found; and finally, carrying out electric transport calculation to obtain the ZT value of the material.

The invention relates to the technical field of photoelectric detection devices, and discloses a photoelectric detector and a preparation method thereof, the photoelectric detector comprises a heterojunction, and the heterojunction comprises a first layer, a second layer and a third layer which are stacked; the first layer is made of a transition metal chalcogenide; the second layer is made of graphene; the third layer is made of two-dimensional semiconductor materials, and energy band structures of the three materials are arranged in a step shape. The invention further provides a preparation method of the photoelectric detector, according to the photoelectric detector and the preparation method thereof, the photo-generated carrier dynamic process of a two-dimensional material heterojunction interface is regulated and controlled through the design of a three-layer heterojunction structure, the electric transport characteristic of the photoelectric detector is optimized, and then the response speed of the device is increased.

The invention belongs to the technical field related to structure optimization design, and discloses a topological optimization method and device for a metamaterial microstructure capable of bearing a band gap, and the method comprises the steps: (1) respectively defining an interpolation penalty coefficient of a Young modulus for the homogenization analysis of the microstructure and the band gap problem of an energy band structure according to the performance analysis of the microstructure, calculating an interpolation penalty coefficient of the mass density; (2) carrying out homogenization analysis of the microstructure based on dynamics to obtain equivalent physical property parameters and determine equivalent material modulus; (3) defining an irreducible first Brillouin region wave vector path of the microstructure based on the geometric symmetry constraint of the microstructure, and further calculating a band gap quality factor between adjacent energy band curves of the microstructure; and (4) establishing a topological optimization model which takes the equivalent modulus as a grading constraint and takes band gap quality factor maximization as a target, and performing iterative optimization based on the topological optimization model to obtain an optimal microstructure configuration. According to the invention, efficient and stable design of the microstructure is realized.

The invention discloses a preparation method of a TiO2 / MIL-101 (Cr) photocatalyst, belongs to the technical field of photocatalysts, and aims to prepare a series of TiO2 / MIL-101 (Cr) heterojunctions for photocatalytic hydrogen production through in-situ growth of TiO2 nanoparticles on the MIL-101 (Cr) surface by a hydrothermal method. By adopting the preparation method of the TiO2 / MIL-101 (Cr) photocatalyst with the structure, the photocatalytic hydrogen production performance is improved, the excellent hydrogen production performance is attributed to a TypeII heterostructure formed by TiO2 and MIL-101 (Cr), electron and energy band structures in a composite material are optimized, and separation and transmission of photon-generated carriers are promoted, so that the catalytic activity is improved.

The invention discloses a method for optimally designing and selecting a resonance aggregate and a resonance aggregate ratio by utilizing a finite element result. The method comprises the following steps: (1) setting a band gap range threshold value M and a vibration acceleration threshold value P; (2) preliminarily generating a resonance aggregate structure according to a design target; (3) inputting the generated resonant aggregate structure into finite element software, and calculating a cellular energy band structure of the multi-resonant aggregate concrete photonic crystal; (4) if the band gap range of the energy band structure of the multi-resonance aggregate concrete photonic crystal cell is larger than M, repeating the steps (2)-(4); (5) calculating the ratio; (6) establishing a multi-resonance aggregate concrete phononic crystal concrete structure according to a design target; and (7) outputting according with the matching requirement. According to the method for optimally designing and selecting the resonance aggregate and the resonance aggregate ratio by utilizing the finite element result, by virtue of the advantages of the photonic crystal metamaterial, a reasonable vibration reduction structure form is explored and constructed, the vibration of an engineering structure is effectively reduced, and the construction cost is reduced.

The invention discloses an III-group nitride device with single particle irradiation resistance. According to the invention, the hole storage layer is introduced between the buffer layer and the channel layer of the epitaxial layer structure, and the hole storage layer forms a hole potential well on the energy band structure so as to effectively collect irradiation-induced excess holes in the channel layer; meanwhile, an extraction electrode and a second source electrode are arranged to respectively collect irradiation-induced excess holes in a nearby area below the grid electrode and between the grid electrode and the source electrode. Wherein the extraction electrode is arranged between the grid electrodes which are sequentially arranged at intervals, and the extraction electrode and the second source electrode are connected with the first source electrode through the metal interconnection layer. The single particle irradiation resistance of the device can be effectively improved, the manufacturing process is compatible with the existing process, and complex process steps do not need to be additionally introduced.

The invention belongs to the technical field of photocatalytic material preparation, and provides an orthogonal carbon nitride composite material, a preparation method and application thereof, and a preparation method of 2, 5-diformyl furan. The preparation method disclosed by the invention comprises the following steps: mixing a carbon nitride precursor with 2, 1, 3-benzothiazole-4, 7-dinitrile, and calcining at 300-400 DEG C to obtain the orthogonal carbon nitride composite material. According to the preparation method, a carbon nitride precursor and 2, 1, 3-benzothiazole-4, 7-dinitrile (BTDN) are used as raw materials, the calcination temperature is controlled to be 300-400 DEG C, and the orthorhombic carbon nitride composite material with the orthorhombic crystal structure is obtained. By adding small organic molecules BTDN, adjusting the molecular spacing of a heptazine ring in carbon nitride, regulating and controlling the electronic structure and energy band structure of carbon nitride, the light absorption range of carbon nitride is widened, the separation efficiency of photon-generated carriers is improved, and then the photocatalytic efficiency is improved.

The invention belongs to the technical field of solar cell preparation, and particularly relates to a perovskite solar cell based on selective dissolution solvent treatment and a preparation method thereof. The perovskite cell comprises a conductive substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode which are arranged in sequence. A solvent with a selective dissolution characteristic is prepared on the perovskite light absorption layer, and passivation modification is carried out on the perovskite thin film. The invention provides a simple perovskite thin film processing method, complex molecular engineering is not needed, the solvent-based processing effectively passivates the defects of the thin film, improves the quality of the perovskite thin film, establishes a new built-in electric field, forms a more appropriate energy band structure, reduces the recombination of charge carriers, and improves the performance of the perovskite thin film. The separation and transmission capabilities of holes at the surface interface are accelerated, so that the photoelectric property of the perovskite cell is optimized, and the stability is improved.

The present invention proposes an optical communication O-band silicon-based high-speed semiconductor laser chip and a manufacturing method thereof. Different buffer layers are used to form a growth surface with a low dislocation density of InP material; N-InAlGaAs is used to replace the conventional N-InAlAs electron blocking layer in the energy band structure to reduce the barrier for electrons to enter the quantum well from the N type and reduce the threshold; a superlattice structure quantum barrier is used to replace the single-layer barrier layer structure to improve the transport of heavy holes in the quantum well; and adjustments are made to the material structure to achieve an O-band high direct modulation rate semiconductor laser chip for optical communication on a silicon substrate with good reliability.

The invention discloses an irradiation damage influence method of carbon-based material AB double-layer graphene, and particularly relates to the technical field of material science and electronics, and the method comprises the steps of S1, microstructure model construction, S2, fast neutron irradiation simulation, S3, external electric field application, S4, microstructure parameter statistics, S5, energy band structure calculation, S6, elastic constant and Young's elastic modulus calculation, and S7, optical property calculation. According to the method, the irradiation damage influence of the AB double-layer graphene of the carbon-based material under the conditions of fast neutron irradiation, an external electric field, different irradiation sources, temperature change, existence of defects and the like can be comprehensively researched, and the influence of various factors on the microstructure, the energy band structure, the Young's elastic modulus and the optical property of the AB double-layer graphene can be analyzed; theoretical support is provided for design and optimization of a carbon-based device, and meanwhile, a reference basis can be provided for irradiation protection and material performance improvement.

The invention discloses Mn-doped MgAl-LDH particles for sonodynamic therapy as well as preparation and application. The Mn-doped MgAl-LDH particles are synthesized through a chemical coprecipitation method, Mn ion doping under the protection of N2 and hydrothermal treatment. Wherein trace doping of Mn ions in an LDH structure causes an appropriate energy band structure, so that effective separation of electrons and holes under ultrasonic irradiation is promoted, and generation of ROS is promoted. The Mn-doped MgAl-LDH particles prepared by the preparation method disclosed by the invention show excellent SDT performance, can effectively inhibit the growth of tumors, and show good biocompatibility. Therefore, the innovative design of the invention opens up a potential path for exploring a novel sound-sensitive agent in effective ultrasonic catalytic tumor treatment.

The invention discloses a surface-modified high-entropy lithium-rich manganese positive electrode material as well as a preparation method and application thereof, and the surface-modified high-entropy lithium-rich manganese positive electrode material is represented by a general formula Li1 + xNi0. 13Co0. 13Mn0. 54MyNzO2-wAw. The specific preparation method comprises the following steps: respectively weighing a nickel-cobalt-manganese compound, a lithium salt, an additive I and an additive II, uniformly mixing, carrying out high-temperature calcination in a muffle furnace, cooling, crushing, crushing, and screening to obtain the surface-modified high-entropy lithium-rich manganese positive electrode material. And mixing with an additive III, and carrying out secondary sintering to prepare the surface high-entropy lithium-rich manganese positive electrode material. According to the method, different electrostatic fields are generated through co-doping of a high-d-state orbital element and a low-electronegativity element, an O2p band is expanded, overlapping between the O2p band and a (TM-O) * band is enhanced, an energy band gap is reduced, and anion oxidation reduction reversibility is promoted; by constructing a surface high-entropy change energy band structure, the diversity and distortion energy of a Mn < 4 + > local structure are increased, and the formation energy of oxygen vacancies and the migration energy of transition metal ions are improved. Through accurate design and controllable preparation of the lithium-rich manganese material and multi-strategy coordinated regulation and control of an energy band structure, the cycle performance and the voltage attenuation phenomenon of the lithium-rich manganese-based positive electrode material are improved.

The invention discloses an IEF-11 / WO3-xS type heterojunction material with full spectrum response as well as a preparation method and application of the IEF-11 / WO3-xS type heterojunction material. The heterojunction is prepared by taking squaric acid, tetrabutyl titanate and WO3-x particles as raw materials, wherein the value range of x in WO3-x is 0 < = xlt; 1. The heterojunction material creatively realizes full-spectrum response from ultraviolet to near infrared through S-type energy band structural design, the separation efficiency of photo-induced electron-hole pairs reaches 2.47 times (compared with WO3-x) and 1.57 times (compared with IEF-11) due to a unique carrier transport mechanism, and strong redox sites are synchronously reserved, so that the material can be applied to the field of photoelectron-hole separation. And compared with a single-component material, the photocatalytic performance is improved by 3.74 times (compared with WO3-x) and 1.41 times (compared with IEF-11). Experiments show that under full-spectrum irradiation, the inactivation rate of the material to escherichia coli can reach 99%, the 120-minute degradation rate of the material to tetracycline (TC) reaches 86%, the material shows broad-spectrum degradation capacity to typical organic pollutants such as chlortetracycline (CTC), rhodamine B (RhB) and methylene blue (MB) in a visible region, and the 120-minute degradation efficiency reaches 77%, 53% and 95% respectively. The heterojunction material is prepared through a simple hydrothermal method, and has important application value in the fields of environmental governance, photocatalytic disinfection and the like.

The invention provides a method for optimizing a detection sensing material for trace characteristic gas in transformer oil, and belongs to the technical field of detection of gas in transformer oil, and the method comprises the following steps: firstly, obtaining basic data of candidate materials, including material composition, atomic structure, electron energy band structure and theoretical gas sensing performance parameters; and establishing a sensing performance prediction model considering the material composition and structure, and training a material-performance correlation model by using a machine learning algorithm. A large number of theoretical material data sets are generated through computer traversal, and multi-dimensional clustering analysis is performed on candidate materials to obtain a clustering center. And carrying out laboratory performance testing by taking a clustering center corresponding material as a to-be-tested set, and collecting actual performance data. And carrying out multi-generation iterative optimization on the material with the optimal performance by adopting a genetic algorithm to finally obtain the transformer oil trace characteristic gas detection sensing material. The problem that an existing gas sensing material is difficult to meet harsh requirements of an electric power system on online detection of a transformer in the aspects of sensitivity, selectivity and stability is solved.

The invention discloses a metal-doped vanadium oxide with a conductive layer and a preparation method and application thereof, a carbon layer is used as the conductive layer, the metal-doped vanadium oxide is CdxV2O5-y, x is 0.001-0.01, and y is 0.01-0.5, the preparation method comprises the following steps: (1) mixing a carbon source, a vanadium source and a cadmium source in a solvent, fully stirring and mixing, and drying to obtain a mixed solid; and (2) fully grinding the mixed solid into powder particles, roasting, washing and drying to obtain a product which can be applied to the aqueous zinc ion battery as an electrode material. According to the invention, a simple one-pot thermal reduction and in-situ activation combined method is adopted, structure change is realized through doping and in-situ activation, rich oxygen defects and interlayer water are generated, so that a positive electrode energy band structure is adjusted, and the obtained material shows high capacity, excellent rate capability and good cycle stability, and has good application prospects. And an effective high-performance zinc ion positive electrode preparation scheme is provided.

The invention belongs to the technical field of new materials and electronic information, and particularly relates to a transition metal doped ZnIn2S4 gas sensor as well as a preparation method and application thereof. The gas sensor comprises a substrate and a transition metal doped ZnIn2S4 nano array growing on the surface of the substrate in situ, the nano array is composed of a plurality of two-dimensional nano sheet layers, the two-dimensional nano sheet layers are arranged in a staggered stacking mode and extend at an included angle of + / -5 degrees relative to the normal direction of the surface of the substrate, and the transition metal doped ZnIn2S4 nano array is arranged on the surface of the substrate. And a network assembly with a three-dimensional flower-shaped topological structure is formed through physical or chemical connection. The preparation method is simple, the energy band structure of the material is effectively regulated and controlled, the forbidden band width is reduced, on the other hand, the specific surface area of the material is remarkably increased, and the pore size distribution is optimized. And the prepared gas sensor shows excellent gas selectivity to triethylamine, is high in response value and high in recovery speed, and is expected to be applied to the fields of environmental monitoring and food safety.

The invention provides a one-dimensional single-port phononic crystal structure for enhancing acoustic signals, which comprises a waveguide, a first plate and a second plate, the first end of the waveguide is open, the second end of the waveguide is closed, the first plate and the second plate are both made of acoustic rigid materials, the first plate and the second plate are periodically arranged at intervals at the position close to the second end of the waveguide, and the first plate and the second plate are arranged at intervals at intervals. And a band gap exists in an energy band structure of the formed one-dimensional photonic crystal, so that a local state of energy concentration occurs between the second end of the waveguide and the one-dimensional photonic crystal. Based on a local state, the one-dimensional single-port phonon crystal structure can realize acoustic signal enhancement in a range near a specific frequency. Meanwhile, the harmonic noise signal, the periodic pulse noise signal and the modulation noise signal are enhanced by the acoustic signal of the one-dimensional single-port phonon crystal structure, so that the detection of weak acoustic signals in strong noise can be realized. The structure is relatively simple, the manufacturing cost is relatively low, and the engineering application prospect is relatively good.

The invention discloses a rare bismuth II type superlattice material and a preparation method thereof. The superlattice material has an InAs (Bi) / GaSb or InAs (Bi) / InAsSb superlattice structure formed by alternately laminating InAs (Bi) layers and GaSb layers or InAsSb layers, and the InAs (Bi) layers are formed by introducing Bi elements into the InAs layers. The preparation method of the superlattice material comprises the following steps: (1) selecting an InSb, InAs or GaSb substrate, performing thermal cleaning on the substrate at 500 DEG C, and cleaning the substrate by using atomic hydrogen in an ultrahigh vacuum environment; (2) alternately laminating InAs (Bi) layers and GaSb layers or InAsSb layers by utilizing a molecular beam epitaxial growth technology, and finally growing a GaSb layer or InAsSb layer as a stop layer, (3) carrying out rapid thermal annealing treatment at the temperature of 380-420 DEG C; the time is 0.5 to 1 min; and (4) characterizing the photoluminescence property of the superlattice. According to the invention, the strain distribution and the energy band structure of the material are obviously improved, the more flexible wavelength regulation and control capability is realized, the hole effective quality is reduced, and the carrier mobility and the quantum efficiency are improved.

The invention provides a Se anion-doped ferric phosphate pyrophosphate / carbon positive electrode active material and a preparation method and application thereof, and relates to the technical field of electrochemical energy storage device positive electrode active materials, the positive electrode active material comprises a ferric phosphate pyrophosphate base material and a carbon coating layer, in the crystal structure of the base material, part of O is partially replaced by Se, and the general formula of the base material is Na4Fe3 (PO4) 2 (P2O7-xSex), x is less than or equal to 1.0; o < 2-> is partially replaced by Se < 2-> in a crystal structure of a matrix material to construct a Se-doped solid solution, so that an electron energy band structure of the material is regulated and controlled; due to introduction of Se, the band gap of the material can be remarkably reduced, the electron conductivity can be improved, local lattice distortion can be caused, a Na < + > diffusion channel can be widened, and the ion migration capability can be improved; the material keeps a complete main phase structure, electron and ion transmission is synergistically optimized, and the rate capability is remarkably improved.

The invention provides a nitrogen-vacancy carbon nitride / indium oxide heterojunction photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of photocatalysts. The nitrogen vacancy carbon nitride is used as a framework of the catalyst, and the charge distribution of the carbon nitride can be adjusted by nitrogen vacancy defects, so that the carrier migration rate and the surface active site abundance are improved; the nitrogen vacancy also changes the charge recombination mode of the carbon nitride, the energy band structure of the carbon nitride is beneficially adjusted, the photovoltaic performance of the carbon nitride is improved, the visible light response range of the carbon nitride is widened, and the photocatalytic performance of the carbon nitride is remarkably improved; indium oxide is introduced to form a heterojunction with nitrogen vacancy carbon nitride, so that electron-hole recombination can be inhibited, a new electron transmission channel is generated, and the carrier transmission rate is increased; the band gap characteristic of indium oxide is consistent with the band gap characteristic of nitrogen vacancy carbon nitride, so that the photocurrent response intensity of the catalyst can be improved, the charge transfer resistance is reduced, and the photocatalytic performance is synergistically enhanced.

The invention provides a temperature sensor and a preparation method thereof, and the method comprises the steps: introducing displacement cations into a transition metal nitride film to form a displacement doped transition metal nitride film, the displacement cations being equivalent to transition metal cations; the crystal structure and the energy band structure of the thin film are regulated and controlled by regulating and controlling the concentration of the displacement cations, so that the conductivity of the thin film is regulated and controlled, and the displacement doped transition metal nitride thin film is obtained; and processing the displacement doped transition metal nitride film through an MEMS technology to obtain the temperature sensor. According to the invention, the high-sensitivity temperature zone of the temperature sensor based on the doped transition metal nitride film can be regulated and controlled in a range from low temperature to room temperature, and the temperature range of the high-sensitivity temperature zone of the temperature sensor is widened.

The invention provides a nonlinear ultrasonic detection method and device based on a photonic crystal, and relates to the technical field of nonlinear ultrasonic detection.The photonic crystal structurally comprises rectangular protrusions and a main board, and the upper surface and the lower surface of the main board are each provided with a plurality of identical rectangular protrusions periodically arranged in the transverse direction; primitive cells of the phononic crystal are formed by symmetrically attaching rectangular protrusions to the upper surface and the lower surface of a main board, and the method comprises the steps that the energy band structure of phonons and crystals is calculated through a constructed finite element model of the primitive cells of the phononic crystal, and the passband range and the forbidden band range of the phononic crystal are analyzed; in nonlinear ultrasonic detection of damage of a material, the photonic crystal is attached to the material, propagation of second harmonics generated nonlinearly by a system is prevented through a forbidden band range, and fundamental waves pass through a passband range. Therefore, through the attached photonic crystal, the nonlinear wave of the system is effectively filtered to reduce the influence of nonlinear ultrasonic detection, and the accuracy and sensitivity of the nonlinear ultrasonic detection are improved.

The present invention discloses an aluminum-doped AgBiSe2 nanomaterial and a preparation method thereof. Based on the S-doped AgBiSe2, Al is further doped, and the hydrothermal method is used to synthesize the aluminum-doped AgBiSe2 nanomaterial. In the AgBi 1‑y Al y Se 1.5 S 0.5 nanomaterial of the present invention, the doped S is used to adjust the electronic energy band structure and simultaneously introduce lattice distortion, and the doped Al is used to increase the phonon-phonon scattering in the AgBiSe2 nanomaterial and simultaneously change its crystal phase structure, improve its power factor, and reduce the lattice thermal conductivity, thereby achieving an increase in zT. The power factor reaches 0.34 mW / m / K at 773K 2 , and the thermoelectric figure of merit zT reaches a maximum of 1.02, significantly improving the thermoelectric performance of the AgBiSe2 nanomaterial.