Efficient blue-light quantum dot light emitting diode and preparation method therefor

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, nanotechnology, electrical components, etc., can solve the problems of high difficulty and high cost, and achieve the effect of improving application life and increasing luminous efficiency

Inactive Publication Date: 2017-03-29
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, improving the performance of blue light quantum dot light-emitting diodes is mainly achieved by optimizing the quantum efficiency of blue light quantum dots, which is difficult and costly

Method used

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  • Efficient blue-light quantum dot light emitting diode and preparation method therefor

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Experimental program
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Effect test

Embodiment 1

[0024] Blue quantum dot light-emitting diode devices, such as figure 1 As shown, it includes a cathode 1, an electron transport layer 2, a surface modification layer 3, a quantum dot light-emitting layer 4, a hole transport layer 5, a hole injection layer 6 and an anode electrode 7 formed on the substrate. The top is the electron transport layer, the surface modification layer, the quantum dot light-emitting layer, the hole transport layer, the hole injection layer and the anode. The electron transport layer can be composed of inorganic nanoparticles such as inorganic oxides or doped inorganic oxides. The surface modification layer can be composed of polymers containing simple aliphatic amine groups, including ethoxylated polyethyleneimine (PEIE), polyethyleneimine (PEI) and composite polymer materials composed of two polymers, to achieve the purpose of modifying the electron transport layer. The energy band structure is used to balance the injection of electrons and holes an...

Embodiment 2

[0034] Blue quantum dot light-emitting diode devices, such as figure 1 As shown, it includes a cathode 1, an electron transport layer 2, a surface modification layer 3, a quantum dot light-emitting layer 4, a hole transport layer 5, a hole injection layer 6 and an anode electrode 7 formed on the substrate. The top is the electron transport layer, the surface modification layer, the quantum dot luminescent layer, the hole transport layer, the hole injection layer and the anode. The electron transport layer is 40nm thick, the surface modification layer is 6nm thick, the quantum dot light emitting layer is 30nm thick, and the hole The thickness of the transport layer is 30nm, and the hole injection layer is 10nm. When the driving voltage of the quantum dot light-emitting diode device is greater than 3.3V, the luminous color remains stable, and the luminous color is blue; the luminous brightness is greater than 1000cd / m 2 , The device efficiency is greater than 3cd / A.

[0035] Th...

Embodiment 3

[0044] Blue quantum dot light-emitting diode devices, such as figure 1As shown, it includes a cathode 1, an electron transport layer 2, a surface modification layer 3, a quantum dot light-emitting layer 4, a hole transport layer 5, a hole injection layer 6 and an anode electrode 7 formed on the substrate. The top is the electron transport layer, the surface modification layer, the quantum dot luminescent layer, the hole transport layer, the hole injection layer and the anode. The electron transport layer is 50nm thick, the surface modification layer is 8nm thick, the quantum dot light emitting layer is 30nm thick, and the hole The thickness of the transport layer is 40nm, and the hole injection layer is 15nm. When the driving voltage of the quantum dot light-emitting diode device is greater than 3.3V, the luminous color remains stable, and the luminous color is blue; the luminous brightness is greater than 1000cd / m 2 , The device efficiency is greater than 3cd / A.

[0045] The...

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Abstract

The invention discloses an efficient blue-light quantum dot light emitting diode and a preparation method therefor. The diode comprises a negative electrode, an electron transport layer, a surface modification layer, a quantum dot light emitting layer, a hole transport layer, a hole injection layer and a positive electrode formed on a substrate, wherein the negative electrode is placed at the bottom layer; the electron transport layer, the surface modification layer, the quantum dot light emitting layer, the hole transport layer, the hole injection layer and the positive electrode are arranged from the bottom up in sequence; and the surface modification layer can balance the electron and hole injection of the quantum dot light emitting diode by modification of the electron transport layer on the lower side, so as to improve the light emitting efficiency of a device. By adoption of the efficient blue-light quantum dot light emitting diode and the preparation method therefor, the light emitting efficiency of the device can be effectively improved, and the service life of the device is prolonged and other performance of the device is improved.

Description

technical field [0001] The invention belongs to the field of quantum dot light emitting diode devices, in particular to a high-efficiency blue light quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QD-LED) is a new type of display device that uses quantum dot materials as a light-emitting layer to be applied to organic or polymer electroluminescent devices. Due to the narrow half-width of the emission spectrum of quantum dots and the shift of the spectral range as the size of the quantum dots changes, QD-LED devices not only have high luminous efficiency, but also the luminous range can cover the entire visible spectral range. Therefore, in recent years, the research on QD-LED devices has attracted extensive attention from research groups at home and abroad. [0003] At present, the performance of blue quantum dot light-emitting diodes is lower than that of red and green quantum dot light-emit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56B82Y30/00
CPCB82Y30/00H10K50/16H10K50/844H10K2102/00H10K71/00
Inventor 潘江涌陈静周凯锋何超屠彦雷威张晓兵
Owner SOUTHEAST UNIV
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