2360 results about "Electron transport layer" patented technology

The invention relates to the field of solar cells, and discloses a buried interface modified trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell structurally comprises a substrate, a conductive layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal counter electrode which are sequentially layered, the hole transport layer adopts a hole transport material [4-(3, 6-dimethyl-9H-carbazole-9-yl) butyl] phosphoric acid (Me-4PACz), and the hole transport layer adopts a hole transport material [4-(3, 6-dimethyl-9H-carbazole-9-yl) butyl] phosphoric acid (Me-4PACz). According to bottom-buried interface modification provided by the invention, a hole transport material Me-4PACz is modified by adopting a (2-phenethyl) phosphonic acid small molecule material, the modified Me-4PACz hole transport layer has high perovskite layer coverage rate, the preparation process is simple, the efficiency of the assembled solar cell is high, the stability is obviously improved, and the commercial application value is very good.

The invention discloses a thiapyran molecule modified solar cell and a preparation method thereof. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a 4-aminotetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, a Cs0.05 (FA < 0.77 > MA < 0.23 >) < 0.95 > Pb < (I < 0.77 > Br < 0.23 >) 3 wide-band gap perovskite thin film, a phenethyl ammonium iodide passivation layer, an electron transport layer of [6, 6]-phenyl-C61-butyric acid isomethyl ester, a 2, 9-dimethyl-4, 6, 7-tetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] the hole barrier layer is made of 1, 7-biphenyl-1, 10-phenanthroline; the electrode layer is made of metal Ag; according to the scheme, the hole transport layer is modified through thiapyran molecules, agglomeration of the hole transport layer is relieved, and a more compact and more uniform self-assembled single layer is generated by inducing favorable crystal orientation. A good bottom interface is obtained based on thiapyran molecule modification, and ordered growth of high-quality perovskite crystal grains is promoted. In addition, the energy level of the hole transport layer is effectively adjusted through thiapyran molecule treatment, and the extraction and transmission of carriers by the hole transport layer are enhanced.

The present disclosure provides a perovskite cell and a preparation method therefor, and a photovoltaic module. The perovskite cell comprises a substrate, and a perovskite layer (3) and an electron transport layer which are sequentially arranged on the substrate, wherein the electron transport layer comprises a C60 layer, and the C60 layer is arranged close to the perovskite layer, wherein the perovskite layer (3) comprises a perovskite material and 1,3-diaminopropane dihydroiodide, and / or the perovskite cell further comprises a passivation layer (4) arranged between the perovskite layer and the C60 layer, and the passivation layer (4) comprises 1,3-diaminopropane dihydroiodide.

The invention relates to the technical field of solar cells, and mainly provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a substrate, a transparent conductive oxide layer, an anchoring layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a top electrode which are stacked in sequence, wherein the material of the anchoring layer comprises a metal oxide; and the material of the hole transport layer comprises a self-assembly molecular material. According to the perovskite solar cell in the technical scheme of the invention, the anchoring point of the SAM is enhanced, the long-term stability of the perovskite cell is improved, and the efficiency loss caused by local electric leakage is reduced.

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell, a preparation method thereof and a photovoltaic module. The invention aims to solve the problem that the cell performance is influenced by non-uniform coverage of the perovskite layer on the hole transport layer. For the purpose, the preparation method of the perovskite solar cell comprises the steps of preparing a hole transport layer on a substrate, preparing an interface modification layer on the hole transport layer, preparing a perovskite layer on the interface modification layer, and sequentially preparing an electron transport layer and an electrode on the perovskite layer to obtain the perovskite cell, the wettability of the hole transport layer can be improved by introducing 3-hydroxyphenylboronic acid into the adjacent interface of the perovskite layer and the hole transport layer, so that the coverage rate of the perovskite layer is increased, meanwhile, the 3-hydroxyphenylboronic acid is coordinated with metal ions in the perovskite layer, non-radiative recombination between the hole transport layer and the perovskite layer interface can be reduced, and the hole transport efficiency is improved. And the carrier transmission efficiency is improved.

The embodiment of the invention provides a perovskite cell, a preparation method thereof and a laminated cell. The perovskite cell comprises a conductive substrate, an inorganic hole transport layer, an organic hole transport layer, a perovskite absorption layer, an electron transport layer and an electrode which are sequentially arranged in a preset direction. Wherein the organic hole transport layer comprises a first hole transport material and a second hole transport material; the first hole transport material comprises a carbazole hole material with a phosphate group; the second hole transport material includes (2-(pyrene-1-yl) ethyl) phosphonic acid. The perovskite cell provided by the embodiment of the invention has a good buried bottom passivation effect, so that energy levels between the hole transport layer and the perovskite absorption layer can be better matched, the carrier extraction rate is improved, the overall cell parameters are improved, and the problem of poor performance of the perovskite cell is solved. The embodiment of the invention also provides a preparation method of the perovskite cell and a laminated cell applying the perovskite cell.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an electron transport material, an OLED with the electron transport material and an organic light-emitting device with the electron transport material. According to the electron transport material disclosed by the invention, triazinyl is taken as a framework, phenyl and cyano-substituted biphenyl is taken as a specific substituent group, methyl, adamantyl, phenyl and pyridyl are limited to be matched, and the electron transport material is used as a material for forming an electron transport layer to manufacture an organic electroluminescent device, so that the evaporation process of the device can be smoothly carried out; and the light-emitting efficiency of the organic light-emitting device is effectively improved, and the application prospect is very good.

The invention relates to an orderly self-assembled monomolecular layer, a semitransparent solar cell and a preparation method of the semitransparent solar cell. The preparation method comprises the following steps: uniformly mixing carbazole phosphoric acid MeO-2PACz with an isopropanol solvent to obtain a mixed solution, spin-coating the mixed solution on an ITO transparent conductive substrate, and annealing to obtain a uniform and compact self-assembled monomolecular layer. And sequentially preparing a perovskite light absorption layer, a C60 electron transport layer, a SnO2 buffer layer and an ITO transparent electrode layer on the surface of the self-assembled monomolecular layer by adopting spin coating, vacuum evaporation, atomic deposition, magnetron sputtering and the like, and finally obtaining the semitransparent perovskite solar cell. The uniform and compact high-quality self-assembled monomolecular layer can be prepared by using the isopropanol and MeO-2PACz spin coating liquid formula, so that the nucleation activation energy of perovskite can be reduced, the perovskite buried layer is more compact, the charge recombination reaction of the buried interface is reduced, and the photoelectric conversion efficiency is improved. And the efficiency and the stability of the semitransparent perovskite solar cell device are obviously improved.

The invention discloses a perovskite solar cell based on perovskite thin film crystallization control and a preparation method thereof, and the method comprises the steps: carrying out the spin coating and deposition of a hole transport layer on conductive glass, customizing and synthesizing small organic molecules with different functional groups through a Michael addition reaction, and taking the small organic molecules as a perovskite precursor additive to prepare a perovskite precursor solution; the perovskite thin film is prepared on the indium tin oxide transparent conductive glass deposited with the hole transport material through an anti-solvent method, and after annealing treatment, the thin film is flat and compact in surface, large in grain size and low in defect state density, and the crystal orientation is perpendicular to a substrate. Spin-coating the passivation layer precursor solution to form a passivation layer; performing vacuum thermal evaporation on the passivation layer to form an electron transport layer material; and sequentially carrying out thermal evaporation on a barrier layer material and a metal electrode on the electron transport layer material to obtain the perovskite solar cell. The prepared trans-perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention provides a method for improving the efficiency of a perovskite solar cell, and relates to the technical field of solar cells, the cell structure sequentially comprises a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top; a new additive 4-(2-aminoethyl) benzenesulfonic acid hydrochloride is introduced into the perovskite light absorption layer, the additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution, and the dosage of the additive is 0.1-1.5 mg / mL. Based on the method, the defect density of shallow energy level and deep energy level of perovskite is reduced, a more intrinsic perovskite absorption layer is formed through induction, balance extraction of electrons and holes is promoted, and then the open-circuit voltage and efficiency of the solar cell are remarkably improved.

The invention belongs to the field of organic electroluminescence, and discloses an electron transport layer material and a preparation method and application thereof. The structure of the material of the electron transport layer is as shown in a chemical formula I: # imgabs0 #. The compound of the material of the electron transport layer provided by the invention is composed of 9-alkyl-9-phenylfluorenyl, a triazine group and cyano-substituted aryl or heteroaryl, and the groups have high electron affinity to form an efficient electron transport channel; the organic light-emitting material also has good thermal stability, and as an electron transport layer material of an organic electroluminescent device, the organic light-emitting material has the characteristics of low driving voltage, high luminous efficiency and long service life.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

Disclosed are a perovskite solar cell and a fabrication method thereof. The perovskite solar cell includes an electron transport layer, a perovskite layer, and a hole transport layer, where the hole transport layer includes an inorganic substance serving as a hole transport material, and an organic layer including a carbazole derivative is formed on the hole transport layer. A combination of a carbazole derivative and an inorganic material serving as a hole transport layer can allow the preparation of a perovskite solar cell with a high conversion efficiency.

The invention relates to the technical field of solar cells, in particular to a trans-perovskite solar cell and a preparation method thereof. The structure of the trans-perovskite solar cell sequentially comprises a conductive substrate layer, a hole transport layer, a lower interface passivation layer, a perovskite light absorption layer, an upper interface passivation layer, an electron transport layer, a buffer layer and a top electrode from bottom to top, wherein the material of the upper interface passivation layer is a DSA and PEAI double-interface material. According to the invention, DSA and PEAI are introduced into the upper interface of the trans-perovskite solar cell to passivate a plurality of different defects and improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

The invention discloses a method for improving the efficiency of a perovskite solar cell, and belongs to the technical field of solar cells. The insulating spacer film prepared between the electron transport layer and the perovskite layer of the perovskite solar cell by adopting the electron beam evaporation method has high uniformity, the cell interface structure can be optimized, defects are reduced, charge recombination loss is reduced, and the photoelectric conversion efficiency and stability are effectively improved. The insulating spacer layer not only can block external moisture and pollutants, reduce direct contact between the perovskite layer and the electron transport layer and prolong the service life of the cell, but also can inhibit internal ion migration and slow down performance degradation. By accurately regulating and controlling the thickness of the insulating spacer layer, charge transmission optimization and compound loss minimization are realized. An innovative technical path is provided for research and development of efficient and stable perovskite solar cells, and further development of the solar cell technology is expected to be promoted.

The invention relates to a perovskite solar cell, which comprises a substrate, a hole transport layer, a perovskite film layer, an electron transport layer and an electrode layer, the perovskite film layer comprises a perovskite material ABX3 and an additive, the additive contains an electron withdrawing group, the additive and the perovskite material are mixed to form the perovskite film layer, and the hole transport layer is arranged between the hole transport layer and the perovskite film layer. A modification material layer is arranged between the perovskite film layer and the electron transport layer, and the modification material layer forms n-type doping on a contact interface of the perovskite film layer. According to the cell, diethyl (3-(trifluoromethyl) benzyl) phosphonate is doped in a perovskite film layer, so that intrinsic weak n-type perovskite is converted into a p-type perovskite at a position close to a hole transport layer, and a surface modification material is arranged between the perovskite film layer and an electron transport layer, so that the perovskite film layer close to the electron transport layer is converted into an n-type perovskite film layer, an efficient p-n junction is formed, and the photoelectric conversion efficiency of the cell is improved. And the efficiency of the perovskite cell is improved.

The invention discloses a bulk phase passivation perovskite solar cell and a preparation method and application thereof, and belongs to the field of new energy. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence, materials of the perovskite light absorption layer comprise (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs < 0.05 > Pb < (I < 0.95 > Br < 0.05 >) < 3 > and guanidyl chloride. According to the perovskite solar cell provided by the invention, a bulk phase passivation technology is adopted, guanidyl chloride is used as a passivator, defect recombination in a perovskite material can be reduced, collection and migration of charge carriers can be enhanced, and the overall performance of the cell, especially the photoelectric conversion efficiency, can be improved.

The invention provides a positive quantum dot light-emitting diode and a preparation method thereof, and belongs to the technical field of photoelectric materials. The invention provides a positive quantum dot light-emitting diode. The positive quantum dot light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode from bottom to top, the electron transport layer is a ZnMgO thin film modified by halogen amine salt. According to the invention, the ZnMgO thin film is modified by using the halogen amine salt, so that the conduction band energy level of the ZnMgO electron transport layer can be moved upwards, the interface potential barrier between the electrode and the electron transport layer is increased, excessive electron injection can be blocked, and the carrier injection balance in the device is promoted. Meanwhile, amino cations in the halogen amine salt can passivate a hydroxyl defect state on the surface of ZnMgO, and high-electronegativity halogen ions enter ZnMgO crystal lattices to passivate oxygen vacancy defects, so that interface exciton quenching is reduced, and the radiation recombination efficiency of the device is improved.

The invention relates to the technical field of new energy, in particular to an extensible composite hole transport layer and a perovskite solar cell based on the extensible composite hole transport layer, and a preparation method of the perovskite solar cell comprises the following steps: forming a nickel oxide film on transparent conductive glass through magnetron sputtering; soaking the nickel oxide thin film to form a self-assembled monomolecular layer; forming a perovskite active layer on the self-assembled monomolecular layer; forming an electron transport layer on the perovskite active layer; and forming an electrode on the electron transport layer. According to the method, the preparation size of the hole transport layer can be expanded, and the photoelectric conversion efficiency of the perovskite solar cell can be improved.

The invention discloses a perovskite light emitting diode, and belongs to the technical field of perovskite light emitting / displaying. The perovskite light-emitting diode comprises a substrate with a transparent electrode, a ZnO electron transport layer, a perovskite light-emitting layer, a hole transport layer, an anode buffer layer and an anode which are arranged in sequence. Wherein the ZnO electron transport layer is a ZnO film subjected to surface modification by adopting an organic silicon cross-linking agent (containing a functional group capable of reacting with amino to form a cross-linked network structure). The surface of the ZnO film is modified by adopting the organic silicon cross-linking agent containing the functional group which can react with the amino group to form the cross-linked network structure, and the cross-linked network structure is formed through the reaction of the functional group and the amino group, so that the mechanical property of the perovskite film is remarkably improved. The method not only enhances the flexibility and crack resistance of the perovskite thin film, but also effectively improves the binding force between the perovskite thin film and the ZnO substrate, and provides powerful support for wide application of the perovskite material in flexible devices.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention belongs to the technical field of perovskite solar cells, and particularly relates to a perovskite photovoltaic module and a preparation method thereof. The perovskite solar cell sequentially comprises toughened glass, a planarization layer, a TCO conductive film, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer from bottom to top. A thin film encapsulation layer is arranged above the electrode layer and coats the hole transport layer, the perovskite layer, the electron transport layer and the electrode layer; and a protective film is arranged on the outer layer of the thin film packaging layer and covers the thin film packaging layer. The thickness of the substrate of the perovskite photovoltaic module can be effectively reduced on the premise of ensuring that the rigid effect of the substrate of the perovskite photovoltaic module is relatively good, so that the overall thickness of the perovskite photovoltaic module is relatively low, and meanwhile, the preparation cost of the perovskite photovoltaic module can be effectively reduced.

The invention discloses a perovskite solar cell based on diamine molten salt surface modification and a preparation method thereof, and the perovskite solar cell comprises a transparent conductive substrate layer, a hole transport layer, a perovskite light absorption layer, a surface modification layer, an electron transport layer, an interface buffer layer and an electrode layer from bottom to top. Or a transparent conductive substrate layer, an interface buffer layer, a surface modification layer, a perovskite light absorption layer, a hole transport layer and an electrode layer, wherein the surface modification layer is diamine molten salt. According to the invention, the surface of the perovskite cell is modified by using diamine molten salt, and by inducing a gradient energy band structure and ordered arrangement of molecules, optimizing charge transfer and realizing interface energy band alignment, compact stacking of a perovskite film is promoted, grain boundary defects are reduced, and the surface roughness is reduced; the light capture capability and the charge carrier mobility of the perovskite thin film are remarkably improved, and a new thought is provided for the development of a high-efficiency and high-stability perovskite solar cell.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

The invention discloses a preparation method of a perovskite-based thin film laminated solar cell, and the method comprises the following steps: S1, taking transparent conductive glass as a substrate, and carrying out the spin coating of an electron transmission material on the substrate to form an electron transmission layer; s2, a perovskite precursor solution prepared in advance is spin-coated, and a perovskite absorption layer is obtained after primary heat treatment; s3, depositing a nano silicon dioxide porous interface layer, spin-coating a self-repairing polymer containing ionic liquid, and performing secondary heat treatment to obtain a modified perovskite absorption layer; s4, spin-coating a hole transport layer; s5, performing vacuum evaporation on a metal counter electrode layer to obtain a perovskite top cell; and S6, stacking and compounding the perovskite-based thin film and a crystal silicon bottom cell to form the perovskite-based thin film laminated solar cell. According to the preparation method of the perovskite-based thin film laminated solar cell, the photoelectric conversion efficiency and the stability of the cell are improved, the self-repairing capability and the long-term durability of the cell are enhanced, and the high-standard requirement of commercial application can be met.

The present disclosure provides a display substrate and a display device, which belong to the field of display technology and are intended to improve the light-emitting performance of the display substrate. The display substrate comprises: a substrate, on which a plurality of sub-pixels are arranged, and the sub-pixels comprise: a first electrode, a first light-emitting layer, a charge generation layer, a second light-emitting layer, an electron transport layer, and a second electrode; a first distance exists between a surface of the second light-emitting layer close to the charge generation layer and a surface of the electron transport layer close to the second electrode, a second distance exists between a surface of the first electrode close to the first light-emitting layer and a surface of the first light-emitting layer facing away from the charge generation layer, and a third distance exists between a surface of the first light-emitting layer facing away from the charge generation layer and a surface of the second light-emitting layer close to the charge generation layer; an absolute value of a difference between the third distance and the first distance and a ratio between an absolute value of a difference between the third distance and the second distance are within a first preset range.

The invention discloses a double-sided flexible solar cell and a preparation method thereof. The solar cell sequentially comprises a flexible semitransparent photovoltaic cell, a curved surface reflector and a flexible photovoltaic cell from top to bottom, wherein the flexible semitransparent photovoltaic cell sequentially comprises a packaging layer, a second transparent electrode, an electron transport layer, a light absorption layer, a hole transport layer and a first transparent electrode from top to bottom; the curved-surface reflecting mirror comprises a curved-surface substrate, a high-reflectivity metal layer and a weather-resistant protective layer from top to bottom in sequence. The flexible photovoltaic cell is one of a perovskite solar cell, an organic solar cell, a CIGS solar cell, a dye-sensitized solar cell, a monocrystalline silicon solar cell, an amorphous silicon solar cell, a cadmium telluride thin film solar cell and a quantum dot solar cell. The double-sided flexible solar cell provided by the invention can solve a series of problems that a traditional flexible solar cell is low in solar spectrum utilization rate, insufficient in photovoltaic and photo-thermal system collaboration, poor in complex curved surface adaptability and the like.

The invention provides a trans-perovskite solar cell containing a fluorine arene phosphoric acid function compensation layer and a preparation method thereof, and the solar cell comprises a conductive substrate, a hole transport layer, a self-assembly monomolecular layer, a function compensation layer, a light active layer, an electron transport layer, a hole blocking layer and a back electrode which are sequentially stacked from bottom to top. The material of the function compensation layer is fluorine-containing aromatic hydrocarbon phosphoric acid. The fluorine-containing aromatic phosphoric acid provided by the invention can make up the anchoring defect on the basis of a self-assembled monomolecular layer, and can effectively passivate the defect at the bottom of perovskite through a plurality of active sites at the same time; the problem of non-ideal performance and stability caused by excessive defects at the self-assembled monomolecular layer / perovskite buried bottom interface of the trans-perovskite solar cell is solved, and a valuable scheme is provided for commercialization of the trans-perovskite solar cell in the future.

According to the perovskite solar cell and the preparation method thereof, the hole transport layer, the perovskite layer, the electron transport layer and the metal electrode are sequentially prepared on the ITO substrate, PDADI is added in the hole transport layer and the mixed SAM solution, the uniform coverage rate of the SAM on the ITO substrate is increased, the interface energy level is optimized, hole extraction is promoted, and the hole transport layer and the perovskite layer are integrated. The non-radiative recombination of an interface is reduced, the surface wettability of the hole transport layer is improved, a film with higher quality and a film with low defect density are formed, and the efficiency and the stability of a perovskite solar cell device are improved. For a perovskite solar cell, PDADI is added into an SAM solution to be mixed to serve as a hole transport layer to prepare an inverted perovskite device, PDADI is added into the mixed SAM solution, the uniform coverage rate of SAM on an ITO substrate is increased, the interface energy level is optimized, hole extraction is promoted, and non-radiative recombination of an interface is reduced.

The invention belongs to the technical field of optical communication, and relates to a flexible silicon-based photoelectric device, a receiving end and a visible light communication system. The flexible silicon-based photoelectric device comprises a back electrode layer, a hole transport layer, a P-type silicon light absorption layer, an electron transport layer and a front electrode layer. The valence band side energy difference between the electron transport layer and the P-type silicon light absorption layer is greater than the conduction band side energy difference; the conduction band side energy difference between the P-type silicon light absorption layer and the hole transport layer is greater than the valence band side energy difference; the forbidden bandwidth of the electron transport layer is greater than 3.0 eV. The front electrode layer comprises a plurality of grid electrodes which are separately arranged on the surface of the electron transport layer. According to the scheme provided by the invention, the heterojunction is formed on the surfaces of the two sides of the P-type silicon light absorption layer, so that the intensity of a built-in electric field is effectively enhanced, and the flowing speed of photo-generated electrons and photo-generated holes in the device is accelerated, thereby improving the response speed of the device; and meanwhile, the collection efficiency of electrons and holes is improved, so that the photoelectric conversion efficiency of a photoelectric device is improved.