830 results about "Electron transport layer" patented technology

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

The invention discloses an organic light-emitting device which comprises a first electrode, a second electrode and an organic layer located between the first electrode and the second electrode, and the organic layer at least comprises a light-emitting layer and an electron transport layer structure. Wherein the light-emitting layer comprises a mixture of compounds shown in the following formula I and having different deuteration rates; and the structure of the electron transport layer comprises a compound shown in the following formula II. The service life of the blue light-emitting device can be remarkably prolonged by matching the structures of the light-emitting layer and the electron transport layer.

The invention discloses a perovskite / crystalline silicon laminated cell based on polycrystalline silicon tunnel junction and interface modification, and belongs to the field of photovoltaic technology. The laminated cell is sequentially provided with a crystal silicon bottom cell, a polycrystalline silicon tunnel junction, an interface modification layer and a perovskite top cell from bottom to top. The polycrystalline silicon tunnel junction comprises an n-type polycrystalline silicon layer, an intrinsic layer and a p-type polycrystalline silicon layer from bottom to top; the doping concentration of the n-type polycrystalline silicon layer is gradually reduced towards the intrinsic layer, and the doping concentration of the p-type polycrystalline silicon layer is increased towards the direction far away from the intrinsic layer; the interface modification layer is arranged between the p-type polycrystalline silicon layer and the perovskite top cell; and the interface modification layer is adjacent to an electron transport layer of the perovskite top cell. Through the change design of the doping concentration of the polycrystalline silicon tunneling junction and the design of the interface modification layer and the hole transport layer, the problem of interface compatibility between the polycrystalline silicon tunneling layer and the perovskite top cell and the problem of poor stability of the laminated cell are solved, and the performance of the laminated cell is comprehensively improved.

The invention relates to the technical field of solar cells, in particular to a full back contact type series perovskite solar cell and a preparation method thereof. The solar cell sequentially comprises a glass substrate, a perovskite light absorption layer, a patterned hole transport layer, a patterned electron transport layer, an insulating layer, a patterned electrode layer, a packaging adhesive film and backboard glass from a light incidence side to a back side, the patterned hole transport layers and the electron transport layers are located on the same horizontal plane and are alternately distributed at intervals, and charge collection in the cell unit and electrical series connection between adjacent units are achieved through the same patterned electrode layer. According to the invention, the glass substrate side is used as a light incident surface, the front electrode shading is eliminated, and the carrier recombination loss is effectively reduced in combination with the back contact structure; meanwhile, the preparation process is greatly simplified through the integrated coplanar electrode and the patterning design, the series resistance and the production cost are reduced, and the photoelectric conversion efficiency, the production yield and the industrial application prospect of the cell are remarkably improved.

The invention relates to an upper interface modified inverted perovskite solar cell and a preparation method thereof. The solar cell sequentially comprises a transparent conductive substrate, a hole transport layer, a perovskite absorption layer, a mixed salt ion passivation layer, an electron transport layer, a hole barrier layer and a counter electrode from bottom to top, the structural formula of the perovskite absorption layer is APbX3; the mixed salt ion passivation layer is made of micromolecular organic matter and inorganic salt. The photoelectric conversion efficiency and the stability of the obtained perovskite solar cell are remarkably improved, the commercialization progress of perovskite is promoted, and the perovskite solar cell has a wide application prospect.

The invention discloses a method for preparing a solar cell by inhibiting perovskite iodine migration and modifying a thin film through a piperazine derivative, and belongs to the technical field of perovskite solar cells. According to the method, a piperazine derivative is used between a perovskite layer and an electron transport layer, so that the piperazine derivative has the functions of modifying a perovskite thin film and inhibiting iodine migration. A modified perovskite light absorption layer is obtained by spin-coating a piperazine derivative solution on the surface of perovskite. The piperazine derivative can act with the iodine simple substance generated after the perovskite material is degraded, and decomposes the iodine simple substance to generate iodide ions, so that further degradation of the perovskite film is prevented, contact between the iodine simple substance and a silver electrode is reduced, and the stability of perovskite is improved. Meanwhile, the material can effectively passivate lead site defects on the surface of the perovskite thin film, and non-radiative recombination generated at the defects is reduced. According to the method, perovskite degradation and silver electrode damage caused by iodine elementary substance volatilization can be effectively inhibited, and an efficient and stable perovskite solar cell device is finally obtained.

The invention discloses a trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite absorption layer, an electron transport layer and a back electrode layer which are arranged in sequence, the hole transport layer is made of nickel oxide; the passivation layer is made of cerium oxide, and the thickness of the passivation layer is 2-5nm; the light incidence direction of the solar cell is from one side of the conductive substrate to one side of the back electrode layer. Ce < 3 + > in cerium oxide is preferentially combined with dangling bonds on the surface of NiOx to form Ce-O-Ni bonds, so that interface defects are eliminated; the cerium oxide energy level is located between the perovskite and the hole transport layer, so that an energy level buffering effect is achieved, and the photoelectric conversion efficiency is improved; the Ce < 3 + > / Ce < 4 + > valence state conversion characteristic of cerium oxide can efficiently absorb and convert ultraviolet photons and prevent the ultraviolet photons from damaging a perovskite lattice structure; the fluorite structure of CeO gamma forms an ion diffusion barrier to block Ni < 2 + > from migrating to a perovskite layer and protect the perovskite structure.

The invention provides a compound with an electron transmission function, an organic electroluminescent device containing the compound and application of the compound, the structure of the compound takes 9-alkyl-9-phenyl fluorenyl, phenanthryl and a triazine group as main components, the 9-alkyl-9-phenyl fluorenyl is one of core structures, fluorene is a polycyclic aromatic hydrocarbon with better planarity, and the triazine group is one of the core structures. Alkyl and phenyl are introduced to the ninth site to generate strong spatial repulsive force with a fluorene ring, a three-dimensional and non-planar propeller-shaped structure is formed, and the non-planar structure can effectively inhibit close packing of molecules in a solid state, so that concentration quenching and excimer formation caused by pi-pi packing are prevented, and the stability of the fluorescent probe is improved. And moreover, the rigid and non-planar structure can also effectively improve the thermal stability of the material, and the service life of the device is prolonged. The compound provided by the invention is used as an electron transport layer and a hole blocking layer in a light-emitting device, so that the device has low driving voltage, high luminous efficiency and long service life.

The invention provides a high-stability electron transport layer and a perovskite solar cell. A preparation method of the electron transport layer comprises the following steps: evaporating a layer of fullerene (C60) on a substrate on which a hole transport layer and a perovskite thin film layer are prepared; a layer of graphite-like phase carbon nitride (g-C3N4) is spin-coated on the C60; and finally, depositing a layer of tin oxide (ALD-SnO2) by utilizing atomic layer deposition. The g-C3N4 has good electrical conductivity, not only can fill some gaps between C60 and ALD-SnO2, but also can interact with C60 and ALD-SnO2, so that the C60 and ALD-SnO2 are attached more tightly, and the interface stability is improved. The prepared high-stability electron transport layer is applied to a perovskite solar cell device, and the stability of a perovskite solar cell is remarkably improved.

The invention relates to the technical field of perovskite solar cell functional thin film packaging, in particular to a solar cell with a perovskite active layer packaged by a double-sided thin film and a preparation method of the solar cell. Al2O3 is used for depositing a layer of Al2O3 thin film between the perovskite active layer and a P-type carrier transport layer (hole transport layer HTL); a layer of SiO2 thin film is deposited between a perovskite active layer and an N-type carrier transport layer (electron transport layer ETL), and a double-sided thin film wrapping layer is formed by an Al2O3 thin film and the SiO2 thin film; through the design and preparation method of the Al2O3 / SiO2 double-sided thin film packaging perovskite active layer, the core stability problem of the perovskite active layer is effectively solved. The double-sided packaging structure can efficiently block water and oxygen permeation, and the perovskite is prevented from being decomposed due to water and oxygen erosion; meanwhile, diffusion of metal electrode ions to a perovskite layer and migration of halogen ions in perovskite to the electrode can be inhibited, bidirectional damage is reduced, and the sensitivity of perovskite to water and oxygen and performance degradation caused by interface ion migration are relieved fundamentally.

The invention belongs to the technical field of solar cells, and discloses a back contact double-sided perovskite solar cell based on a parallel structure and a preparation method of the back contact double-sided perovskite solar cell. The battery comprises, in order: a glass substrate; a first perovskite light absorption layer; the first charge transport layer comprises a first hole transport layer HTL and a first electron transport layer ETL which are arranged at an interval; patterning the electrode layer; the second charge transport layer comprises a second hole transport layer HTL and a second electron transport layer ETL which are arranged at an interval, the second hole transport layer HTL and the first hole transport layer HTL are correspondingly arranged, and the second electron transport layer ETL and the first electron transport layer ETL are correspondingly arranged; patterning the insulating layer; a second perovskite light absorption layer; and packaging the adhesive film layer and the back glass. According to the solar cell, double-face light receiving and maximum light energy utilization can be achieved, meanwhile, the requirement for current matching is lowered through the parallel connection design, the shadow tolerance and environmental adaptability of a device are improved, and the manufacturing cost is reduced.

The invention provides a novel perovskite cell and a preparation method thereof, the novel perovskite cell comprises an antireflection film stack layer, a glass substrate, an equivalent refraction layer, a hole transport layer, a perovskite layer, an electron transport layer and a top electrode which are arranged in sequence, the antireflection film stack layer is used for constructing refractive index transition between air and the glass substrate, and the hole transport layer is used for transmitting the hole transport layer. The absolute amount of effective light entering the battery is increased; the target effective refractive index of the equivalent refraction layer is associated with the first refractive index of the glass substrate and the second refractive index of the hole transport layer, and is used for constructing refractive index transition between the glass substrate and the hole transport layer so as to reduce the interface reflection loss of the perovskite cell; it is ensured that incident light passing through the glass substrate penetrates to the perovskite layer without significant loss. Through the superposition design, the utilization rate of light in the battery can be effectively improved, and the power generation efficiency of the battery is further improved.

The invention discloses an electron transport material, an electron transport layer and an organic electroluminescent device, and belongs to the technical field of organic electroluminescent materials. The electron transport material is a nitrogen-containing heterocyclic compound, and simultaneously contains a pyridine ring and a pyrimidine ring connected with the pyridine ring. By introducing a power supply group with a steric effect, the nucleophilicity of similar nitrogen atoms on a pyrimidine ring connected with a pyridine ring can be shielded, so that the coordination activation n-doping effect of a target chelated nitrogen atom and an n-type doping agent is enhanced, and the coordination stability in the coordination activation n-doping effect is promoted; by introducing a power-supplying group to modify the nitrogen-containing heterocyclic unit, the electron nucleophilicity of the nitrogen-containing heterocyclic unit is enhanced, so that the electron transport material can form a more stable complex with the n-type dopant, and the conductivity of the electron transport layer of the light-emitting device is improved; therefore, the driving voltage of the organic light-emitting device can be reduced, the efficiency of the device is improved, and the service life is prolonged.

The invention relates to a perovskite solar cell and a preparation method thereof, the perovskite solar cell comprises a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode layer which are stacked in sequence, and the hole transport layer and / or the electron transport layer contains a cyanophenyl compound. According to the perovskite solar cell, the cyanophenyl compound is adopted as a passivation material, the defects of the electron transport layer and the hole transport layer are passivated at the same time, non-radiative recombination at an interface is reduced, and finally the device performance of the perovskite solar cell is improved.

The invention discloses a perovskite solar cell device and a preparation method, and belongs to the technical field of perovskite solar cell preparation, and the perovskite solar cell device comprises a first electrode layer, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a second electrode layer from top to bottom in sequence, a passivation layer is arranged between the electron transport layer and the perovskite light absorption layer; the passivation layer is made of a diphenylamine passivator; the chemical structural formula of the diphenylamine passivator is shown in the specification, and in the formula, R1-R10 are respectively and independently selected from one of hydrogen, C1-C6 alkyl, carboxyl, cyano, trifluoromethyl, halogen, phosphonic acid group, C1-C6 alkyl thioether group and (CF3) 3-C-; at least five substituent groups in R1-R10 are hydrogen at the same time. By adopting the diphenylamine passivator, the stability and efficiency of the perovskite solar cell device are effectively improved. .

The invention discloses a laser and a preparation method thereof.The laser comprises a first reflector, a hole transport layer, a gain layer, an electron transport layer and a second reflector which are arranged in a stacked mode in the first direction and further comprises a first electrode and a second electrode, and the first electrode is located on the side, away from the gain layer, of the hole transport layer; the projection parts of the first electrode and the hole transport layer in the first direction are overlapped, the second electrode is located on the side, away from the gain layer, of the electron transport layer, and the projection parts of the second electrode and the electron transport layer in the first direction are overlapped. According to the laser provided by the invention, electric injection of the gain layer is realized, so that the problem of difficulty in electric pumping in the laser is solved, and the efficiency of the laser is improved.

The invention belongs to the technical field of photoelectric materials, and particularly relates to a preparation method of a perovskite solar cell. The preparation method of the perovskite solar cell comprises the following steps: soaking an ITO substrate in carbazole phosphonic acid dispersion liquid to spontaneously form a hole modification layer on the surface of the ITO substrate; and sequentially overlapping a perovskite layer, an electron transport layer and an electrode layer on the surface of the hole modification layer to obtain the perovskite solar cell. The beneficial effects of the invention are that the preparation method of the perovskite solar cell achieves the uniform preparation of the hole modification layer through the regulation and control of the inclination angle, temperature and humidity, and improves the efficiency of the cell.

The invention provides a thermal shock resistant perovskite solar cell and a preparation method thereof. The thermal shock resistant perovskite solar cell sequentially comprises a conductive substrate, an electron transport layer, a light absorption layer, a hole transport layer and a metal electrode layer from bottom to top, and an FPI layer is introduced between a perovskite layer and the electron transport layer. The FPI molecular passivation layer introduced by the method is anchored on a TiO2 and perovskite interface through a unique'molecular bridge 'structure, so that the modulus difference between a perovskite layer and an electron transport layer is greatly reduced, the release of interface stress is remarkably promoted, and meanwhile, the interface stress energy is reduced; 2, the occurrence of a perovskite thin film phase separation phenomenon and the generation of degradation products are inhibited; thirdly, the vertical growth of perovskite thin film crystal grains and the carrier transport efficiency are promoted; higher photoelectric conversion efficiency and good long-term stability are realized. The perovskite solar cell prepared by the method has the characteristics of simple process, excellent stability, good repeatability and the like, is suitable for large-scale popularization and application, and has a good application prospect.

A kind of lead-free perovskite hemispherical photodetector, preparation method and its application in single-pixel lensless color imaging belong to the field of image processing technology.The detector is composed of chromium electrode layer, electron transport layer, perovskite layer, hole transport layer and metal electrode layer from inside to outside on the spherical surface of hemispherical transparent substrate.The perovskite obtained by the application has strong lead-free and excellent stability, outstanding charge carrier transport capacity, high collection efficiency and strong weak light sensing ability.The application uses perovskite for color imaging, directly converts optical signal into electrical signal, has high sensitivity, shows excellent performance with linear dynamic response range of 146dB, and has the advantages of uniform response capacity and uniform thickness.The halide perovskite used by the application has low cost, short preparation time, does not contain toxic element lead, improves the application range of perovskite detector, and reduces the manufacturing cost and time cost of perovskite detector.

To provide a material for an electron transport layer with a low refractive index. , , , , , , , 【Solution means】The ratio of carbon atoms bonded by sp3 hybrid orbitals constituting a saturated hydrocarbon group is within a certain range, and it is a material for a light-emitting device or a material for an electron transport layer containing an organic compound having a pyridine skeleton, a diazine skeleton or a triazine skeleton. It contains at least one six-membered heteroaromatic ring containing 1 to 3 nitrogen atoms, has a plurality of aromatic hydrocarbon rings having 6 to 14 carbon atoms forming the ring, and at least two of the plurality of aromatic hydrocarbon rings are benzene rings, and contains an organic compound having a plurality of hydrocarbon groups forming bonds by sp3 hybrid orbitals. The ordinary light refractive index of the organic compound layer for any wavelength in the range of 455 nm or more and 465 nm or less is 1.5 or more and 1.75 or less, and it is also a material for an electron transport layer.​​​​​​​​​​​​​​​​

The application discloses a perovskite solar cell and a preparation method thereof. The composition of the perovskite solar cell comprises a glass electrode, an electron transport layer, a sensitized layer, a perovskite film, a hole transport layer and a metal electrode which are sequentially arranged, and the sensitized layer contains stannous ions. The preparation method of the perovskite solar cell comprises the following steps: 1) immersing the glass electrode on which the electron transport layer is deposited into a soluble stannous salt solution for soaking, and then taking out and drying to form the sensitized layer on the electron transport layer; 2) depositing the perovskite material on the sensitized layer to form the perovskite film, and then sequentially depositing the hole transport layer and the metal electrode on the perovskite film to obtain the perovskite solar cell. The perovskite film in the perovskite solar cell has good uniformity and compactness, and the perovskite solar cell has high photoelectric conversion efficiency. The preparation method is simple, and is suitable for large-scale popularization and application.

A kind of transverse perovskite solar cell, including transparent conductive layer, hole transport layer, perovskite absorption layer, electron transport layer and back electrode layer arranged in sequence;Back electrode layer is the composite structure of transparent conductive oxide layer and active metal layer;Electron transport layer is fullerene electron transport layer;Transverse perovskite solar cell further includes buffer layer, buffer layer is located between electron transport layer and back electrode layer, and buffer layer is molybdenum-doped indium oxide layer.Using molybdenum-doped indium oxide as buffer layer, compared with traditional tungsten-doped indium oxide, in the top electron collection interface of transverse perovskite solar cell, better energy level matching, more superior low-temperature electrical performance, stronger interface stability and wider process window are realized.

The application provides a perovskite solar cell based on synergistic effect of an additive and a passivation agent and a preparation method thereof, the perovskite solar cell based on synergistic effect of the additive and the passivation agent comprising: conductive electrodes FTO, a first hole transport layer, a second hole transport layer, a perovskite active layer, a passivation layer, an electron transport layer, an interface modification layer and a metal electrode layer arranged in sequence; wherein the perovskite active layer is added with an additive fluoropyridine; the passivation layer is added with a passivation agent diammonium hydriodate; the additive and the passivation agent can simultaneously interact with constituent components in the perovskite. Through synergistic effect of the fluoropyridine additive and the diammonium hydriodate passivation agent, formation of lead iodide and a delta phase in the perovskite thin film is inhibited, crystallinity of the perovskite thin film is improved, and defect density is reduced, and finally a perovskite solar cell with high performance and high stability is obtained.

The invention relates to the technical field of PbS quantum dot solar cells, and provides an infrared quantum dot solar cell based on double hole transport layers and a preparation method of the infrared quantum dot solar cell. The infrared quantum dot solar cell comprises a substrate, a bottom electrode, an electron transport layer, a quantum dot photosensitive layer, a hole transport layer and a top electrode which are sequentially stacked, and the hole transport layer comprises a PbS-PbO-EDT hole collection layer and a PbS-PbCl2-EDT hole collection layer which are arranged on the quantum dot photosensitive layer in sequence. The hole transport layer of a double-layer structure is adopted, Cl ligands are introduced, stress caused by volume shrinkage during ligand exchange is reduced, open-circuit voltage and short-circuit current losses caused by cracks on the surface of the film are reduced, meanwhile, the energy band level of the composite film is almost kept unchanged, and voltage losses are avoided.

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.

A quantum dot light emitting structure and a method for manufacturing the quantum dot light emitting structure, and an array substrate are disclosed. The quantum dot light emitting structure includes: a quantum dot light emitting layer; an electrode; and an electron transport layer located between the quantum dot light emitting layer and the electrode, the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer, a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is different from a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The invention provides a preparation method of a perovskite laminated cell and the perovskite laminated cell. The preparation method comprises the following steps: providing a bottom cell; a first transparent conductive layer, a hole transport layer, a perovskite layer and a first passivation layer are sequentially formed on one side of the bottom cell in the thickness direction of the bottom cell, the preparation environment of the first passivation layer is in the air, and a solvent for preparing the first passivation layer comprises a polar solvent and a non-polar solvent; and an electron transport layer, a second transparent conductive layer and a first electrode are sequentially formed on one side, deviating from the bottom cell, of the first passivation layer, so that the problem of poor quality of the passivation layer of the perovskite laminated cell prepared in the air in the prior art is solved.

This application relates to a back-contact tandem solar cell, its fabrication method, and a photovoltaic module, belonging to the field of photovoltaic technology. The back-contact tandem solar cell includes a back-contact bottom cell and a perovskite top cell, with the perovskite top cell electrically connected to the front side of the back-contact bottom cell via an interconnect layer. The back-contact bottom cell includes a substrate, and the perovskite top cell includes an electron transport layer, a perovskite layer, and a hole transport layer sequentially disposed on the interconnect layer. The surface of the substrate facing the perovskite layer has a textured structure, so that the surfaces of the interconnect layer and the electron transport layer facing the perovskite top cell also have textured structures. The textured structure includes multiple pyramidal structures, and the surface of the pyramidal structures includes multiple recessed structures. The perovskite precursor liquid is guided downward by the recessed structures, promoting the uniform spreading of the perovskite precursor liquid on the surface of the electron transport layer, reducing the risk of pinholes in the perovskite layer, and improving the quality of the perovskite layer.

The invention discloses a fine simulation method of a CdTe-based II-VI group compound thin film solar cell and a cell structure designed based on the method. According to the method, a physical model of a CdTe-based battery is established through numerical simulation, then the energy band structure of a carrier transport layer is systematically optimized, and the quantitative criteria that a hole transport layer needs to meet the requirements that the Fermi energy level is lower than that of an absorption layer and the hole transport layer has enough positive conduction band offset and an electron transport layer needs to have a wide band gap and moderate positive conduction band offset are determined. And for the optical layer, the optimal thickness of the antireflection layer is determined, the enhancement effect of the optical path gain of the textured structure on optical absorption is quantified, and the maximization of the light capture efficiency is realized. According to the method, through electrical-optical coupling simulation, the CdTe-based solar cell structure of which the conversion efficiency is remarkably improved can be accurately predicted and guided to be designed, the defects that a traditional experiment is high in trial and error cost and long in period are effectively overcome, and a reliable theoretical design and optimization tool is provided for research and development of a high-efficiency and low-cost CdTe-based solar cell.