1372 results about "Electron transport layer" patented technology

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

The present disclosure provides a display substrate and a display device, which belong to the field of display technology and are intended to improve the light-emitting performance of the display substrate. The display substrate comprises: a substrate, on which a plurality of sub-pixels are arranged, and the sub-pixels comprise: a first electrode, a first light-emitting layer, a charge generation layer, a second light-emitting layer, an electron transport layer, and a second electrode; a first distance exists between a surface of the second light-emitting layer close to the charge generation layer and a surface of the electron transport layer close to the second electrode, a second distance exists between a surface of the first electrode close to the first light-emitting layer and a surface of the first light-emitting layer facing away from the charge generation layer, and a third distance exists between a surface of the first light-emitting layer facing away from the charge generation layer and a surface of the second light-emitting layer close to the charge generation layer; an absolute value of a difference between the third distance and the first distance and a ratio between an absolute value of a difference between the third distance and the second distance are within a first preset range.

The invention provides a trans-perovskite solar cell containing a fluorine arene phosphoric acid function compensation layer and a preparation method thereof, and the solar cell comprises a conductive substrate, a hole transport layer, a self-assembly monomolecular layer, a function compensation layer, a light active layer, an electron transport layer, a hole blocking layer and a back electrode which are sequentially stacked from bottom to top. The material of the function compensation layer is fluorine-containing aromatic hydrocarbon phosphoric acid. The fluorine-containing aromatic phosphoric acid provided by the invention can make up the anchoring defect on the basis of a self-assembled monomolecular layer, and can effectively passivate the defect at the bottom of perovskite through a plurality of active sites at the same time; the problem of non-ideal performance and stability caused by excessive defects at the self-assembled monomolecular layer / perovskite buried bottom interface of the trans-perovskite solar cell is solved, and a valuable scheme is provided for commercialization of the trans-perovskite solar cell in the future.

The invention discloses an organic light-emitting device which comprises a first electrode, a second electrode and an organic layer located between the first electrode and the second electrode, and the organic layer at least comprises a light-emitting layer and an electron transport layer structure. Wherein the light-emitting layer comprises a mixture of compounds shown in the following formula I and having different deuteration rates; and the structure of the electron transport layer comprises a compound shown in the following formula II. The service life of the blue light-emitting device can be remarkably prolonged by matching the structures of the light-emitting layer and the electron transport layer.

The invention provides a perovskite solar cell. The perovskite solar cell comprises a conductive substrate; a hole transport layer; a polymer hydrophobic layer; the polymer hydrophobic layer is formed by polymer ionic liquid; a perovskite thin film layer; an electron transport layer; an electrode layer; the polymer ionic liquid comprises a structure as shown in a formula (I). Compared with the prior art, the polymer ionic liquid provided by the invention has hydrophobicity and can effectively block invasion of water vapor to a perovskite layer when being applied; secondly, a monomer in the polymer ionic liquid contains imidazole, C-H in the monomer can form hydrogen bonds with halogen atoms in the perovskite, the interaction between a polymer chain and the perovskite is enhanced, and the phase change of the perovskite is inhibited; in addition,-SO3-at one end of the polymer ionic liquid can be combined with Pb < 2 + > in perovskite through electrostatic interaction, phase change of the polymer ionic liquid is further inhibited, and Pb leakage is reduced.

The invention discloses a perovskite / crystalline silicon laminated cell based on polycrystalline silicon tunnel junction and interface modification, and belongs to the field of photovoltaic technology. The laminated cell is sequentially provided with a crystal silicon bottom cell, a polycrystalline silicon tunnel junction, an interface modification layer and a perovskite top cell from bottom to top. The polycrystalline silicon tunnel junction comprises an n-type polycrystalline silicon layer, an intrinsic layer and a p-type polycrystalline silicon layer from bottom to top; the doping concentration of the n-type polycrystalline silicon layer is gradually reduced towards the intrinsic layer, and the doping concentration of the p-type polycrystalline silicon layer is increased towards the direction far away from the intrinsic layer; the interface modification layer is arranged between the p-type polycrystalline silicon layer and the perovskite top cell; and the interface modification layer is adjacent to an electron transport layer of the perovskite top cell. Through the change design of the doping concentration of the polycrystalline silicon tunneling junction and the design of the interface modification layer and the hole transport layer, the problem of interface compatibility between the polycrystalline silicon tunneling layer and the perovskite top cell and the problem of poor stability of the laminated cell are solved, and the performance of the laminated cell is comprehensively improved.

The invention discloses a perovskite solar cell based on a cross-linked interface passivation layer, and relates to the technical field of photovoltaic cell materials. The perovskite solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a crosslinking interface passivation layer, a hole transport layer and a metal electrode from bottom to top, and the cross-linked interface passivation layer is made of a 4-[10-(4-{(1, 2, 2-trifluorovinyl) oxy} phenyl)-10H-phenoxazine-2-yl] phenylphosphonic acid material. The cross-linked interface passivation layer can significantly improve the photovoltaic performance and stability, the intrinsic stability of the device is greatly enhanced by the cross-linked network, and in a double-85 aging test of 85 DEG C / 85% RH, the time required for attenuating the efficiency of the device to 80% of an initial value can exceed 1000 hours.

The invention relates to the technical field of solar cells, in particular to a full back contact type series perovskite solar cell and a preparation method thereof. The solar cell sequentially comprises a glass substrate, a perovskite light absorption layer, a patterned hole transport layer, a patterned electron transport layer, an insulating layer, a patterned electrode layer, a packaging adhesive film and backboard glass from a light incidence side to a back side, the patterned hole transport layers and the electron transport layers are located on the same horizontal plane and are alternately distributed at intervals, and charge collection in the cell unit and electrical series connection between adjacent units are achieved through the same patterned electrode layer. According to the invention, the glass substrate side is used as a light incident surface, the front electrode shading is eliminated, and the carrier recombination loss is effectively reduced in combination with the back contact structure; meanwhile, the preparation process is greatly simplified through the integrated coplanar electrode and the patterning design, the series resistance and the production cost are reduced, and the photoelectric conversion efficiency, the production yield and the industrial application prospect of the cell are remarkably improved.

The invention is suitable for the technical field of solar cells, and provides a perovskite solar cell module and a preparation method thereof. The perovskite solar cell module comprises an anode, a hole transport layer, a perovskite layer, an electron transport layer and a cathode which are sequentially laminated. An optical active material used for preparing the perovskite layer is metal halide perovskite, and the specific chemical formula is Cs0. 15FA0. 85PbI3; and a cathode interface material used for preparing the cathode interface layer is quinacridone derivative (DCNQA-PyBr). According to the invention, DCNQA-PyBr is used as the cathode interface material to be applied to the perovskite (such as a Cs0. 15FA0. 85PbI3 system) solar cell module, the thick film processing of the cathode interface material can be realized, the energy conversion efficiency of the perovskite solar cell module is improved, and the cathode interface material is suitable for large-scale production and can meet the requirement of large-area industrial production.

The invention relates to a method for regulating and controlling the performance of PeLEDs by waiting time before spin-coating, which comprises the following steps: step 1, dropwise adding a perovskite precursor solution to a zinc-magnesium-oxygen electron transport layer which is prepared in advance and has acetate on the surface, standing and waiting for 8-15 seconds on the electron transport layer, the perovskite precursor solution and the electron transport layer are subjected to a pre-reaction; 2, carrying out spin-coating film formation on the perovskite precursor solution subjected to the pre-reaction treatment, and then carrying out annealing treatment on the perovskite film; the perovskite thin film is an FAPbBr3 thin film; the perovskite precursor comprises FABr and PbBr2, and the molar ratio of the FABr to the PbBr2 is greater than 2: 1. According to the method, the perovskite thin film with a smooth surface is prepared by using specific waiting time before spin coating, so that local electric injection nonuniformity is inhibited, the efficiency roll-off of the device is reduced, and the brightness of about 590000 cd m <-2 > is finally realized.

The invention provides a preparation method of a perovskite solar cell, and belongs to the field of perovskite solar cells, and the preparation method comprises the following steps: S1, pretreating a transparent conductive substrate; s2, spin-coating the surface of the transparent conductive substrate with a nanoparticle dispersion liquid, and carrying out annealing treatment to obtain a flattened transparent conductive substrate; soaking the leveled transparent conductive substrate in a hydrogen peroxide solution with the concentration of 1-3%, washing and drying, and then carrying out ultraviolet ozone treatment to obtain a hydroxyl modified leveled transparent conductive substrate; s3, spin-coating a hole transport layer on the surface of the hydroxyl modified and flattened transparent conductive substrate; s4, spin-coating a perovskite light absorption layer on the surface of the hole transport layer; s5, spin-coating an electron transport layer on the surface of the perovskite light absorption layer; and S6, evaporating an electrode layer on the surface of the electron transport layer. According to the invention, the photoelectric conversion efficiency of the perovskite solar cell is significantly improved through leveling and hydroxylation treatment of the substrate.

The invention provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a transparent substrate layer, a hole transport layer or an electron transport layer, a perovskite active layer, a hole transport layer or an electron transport layer and a composite electrode layer which are sequentially arranged from bottom to top, the composite electrode layer is of a double-layer composite structure composed of a first metal layer and a second metal layer, and the first metal layer is a molybdenum metal layer. The high chemical stability and compact structure of the molybdenum metal layer are utilized, a physical barrier is formed between the perovskite active layer and the second metal layer, migration of halogen ions such as iodine (I-) to the top electrode is effectively inhibited, direct corrosion reaction between the second metal layer and the halogen ions is avoided, and the stability of long-term operation of the device is remarkably improved.

The invention relates to an upper interface modified inverted perovskite solar cell and a preparation method thereof. The solar cell sequentially comprises a transparent conductive substrate, a hole transport layer, a perovskite absorption layer, a mixed salt ion passivation layer, an electron transport layer, a hole barrier layer and a counter electrode from bottom to top, the structural formula of the perovskite absorption layer is APbX3; the mixed salt ion passivation layer is made of micromolecular organic matter and inorganic salt. The photoelectric conversion efficiency and the stability of the obtained perovskite solar cell are remarkably improved, the commercialization progress of perovskite is promoted, and the perovskite solar cell has a wide application prospect.

The invention relates to a large-area methylamine-free perovskite photovoltaic module and a preparation method thereof. The photovoltaic module comprises a substrate, a hole transport layer, a perovskite active layer, an interface passivation layer, an electron transport layer and a metal electrode, the hole transport layer is a nickel oxide / organic hole material composite layer; the organic hole material comprises PTAA, P3HT, MoO3 or a self-assembled monomolecular layer. The perovskite solar cell provided by the invention has remarkable advantages in performance and stability, and especially has excellent long-term stability under high-humidity and high-temperature conditions.

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

The invention discloses a method for preparing a solar cell by inhibiting perovskite iodine migration and modifying a thin film through a piperazine derivative, and belongs to the technical field of perovskite solar cells. According to the method, a piperazine derivative is used between a perovskite layer and an electron transport layer, so that the piperazine derivative has the functions of modifying a perovskite thin film and inhibiting iodine migration. A modified perovskite light absorption layer is obtained by spin-coating a piperazine derivative solution on the surface of perovskite. The piperazine derivative can act with the iodine simple substance generated after the perovskite material is degraded, and decomposes the iodine simple substance to generate iodide ions, so that further degradation of the perovskite film is prevented, contact between the iodine simple substance and a silver electrode is reduced, and the stability of perovskite is improved. Meanwhile, the material can effectively passivate lead site defects on the surface of the perovskite thin film, and non-radiative recombination generated at the defects is reduced. According to the method, perovskite degradation and silver electrode damage caused by iodine elementary substance volatilization can be effectively inhibited, and an efficient and stable perovskite solar cell device is finally obtained.

The invention provides a solar cell and a preparation method thereof, electric equipment and power generation equipment. The solar cell comprises a first conductive electrode, a passivation layer, a light absorption layer, an electron transport layer and a second conductive electrode which are sequentially stacked from bottom to top, wherein the passivation layer comprises a passivator shown in the formula I. The solar cell provided by the invention has excellent photoelectric conversion efficiency and stability.

The invention discloses a trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite absorption layer, an electron transport layer and a back electrode layer which are arranged in sequence, the hole transport layer is made of nickel oxide; the passivation layer is made of cerium oxide, and the thickness of the passivation layer is 2-5nm; the light incidence direction of the solar cell is from one side of the conductive substrate to one side of the back electrode layer. Ce < 3 + > in cerium oxide is preferentially combined with dangling bonds on the surface of NiOx to form Ce-O-Ni bonds, so that interface defects are eliminated; the cerium oxide energy level is located between the perovskite and the hole transport layer, so that an energy level buffering effect is achieved, and the photoelectric conversion efficiency is improved; the Ce < 3 + > / Ce < 4 + > valence state conversion characteristic of cerium oxide can efficiently absorb and convert ultraviolet photons and prevent the ultraviolet photons from damaging a perovskite lattice structure; the fluorite structure of CeO gamma forms an ion diffusion barrier to block Ni < 2 + > from migrating to a perovskite layer and protect the perovskite structure.

The invention provides a compound with an electron transmission function, an organic electroluminescent device containing the compound and application of the compound, the structure of the compound takes 9-alkyl-9-phenyl fluorenyl, phenanthryl and a triazine group as main components, the 9-alkyl-9-phenyl fluorenyl is one of core structures, fluorene is a polycyclic aromatic hydrocarbon with better planarity, and the triazine group is one of the core structures. Alkyl and phenyl are introduced to the ninth site to generate strong spatial repulsive force with a fluorene ring, a three-dimensional and non-planar propeller-shaped structure is formed, and the non-planar structure can effectively inhibit close packing of molecules in a solid state, so that concentration quenching and excimer formation caused by pi-pi packing are prevented, and the stability of the fluorescent probe is improved. And moreover, the rigid and non-planar structure can also effectively improve the thermal stability of the material, and the service life of the device is prolonged. The compound provided by the invention is used as an electron transport layer and a hole blocking layer in a light-emitting device, so that the device has low driving voltage, high luminous efficiency and long service life.

The invention relates to the technical field of batteries, and discloses a perovskite crystalline silicon laminated battery, a manufacturing method thereof, a photovoltaic module and a photovoltaic system. The manufacturing method of the perovskite crystalline silicon laminated cell comprises the following steps: providing a silicon substrate, wherein the silicon substrate comprises a first surface and a second surface which are oppositely arranged; manufacturing a P-type doped layer and a first electrode layer which are stacked in sequence on the first surface of the silicon substrate; an N-type doped layer, a tunneling layer, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, a second electrode layer and an antireflection layer which are sequentially stacked are manufactured on the second surface of the silicon substrate; wherein the step of manufacturing the buffer layer comprises the step of forming the buffer layer on one side, far away from the perovskite layer, of the electron transport layer by adopting a plasma enhanced atomic layer deposition method. According to the technical scheme provided by the invention, the long-term stability of the perovskite crystalline silicon laminated cell can be improved.

The invention provides a silicon / perovskite / GaInP three-junction laminated solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell adopts a multi-layer stacked structure and sequentially comprises a GaInP cell, a transparent conductive adhesive, a perovskite top electrode, an anti-reflection layer, a transparent conductive electrode, an electron transport layer, a perovskite layer, a hole transport layer, a silicon cell and a back electrode from top to bottom. The GaInP cell is mechanically stacked and integrated with the lower perovskite / silicon cell through the transparent conductive adhesive, spectrum splitting and current matching are completed on the premise of not depending on epitaxial growth, the solar spectrum absorption range is remarkably widened, and the photon utilization rate is improved. According to the cell structure and the preparation method provided by the invention, the perovskite / silicon / gallium indium arsenide three-junction laminated solar cell which is efficient, stable and flexible and can be prepared in a large area can be realized.

The invention relates to a perovskite solar module preparation method and a cell structure. The perovskite solar module preparation method comprises the following steps: step 1, pretreating a conductive substrate layer; step 2, scribing by using a laser P1; step 3, preparing a hole transport layer; 4, preparing a perovskite light absorption layer; step 5, preparing an electron transport layer; step 6, preparing an electron transmission reinforcing layer; step 7, scribing by laser P2; 8, preparing an electrode layer; and step 9, performing laser P3 scribing and laser P4 edge cleaning on the conductive substrate layer after the electrode layer is prepared. The prepared perovskite precursor solution capable of being coated in the air can directly form a high-quality perovskite thin film in a slit coating mode in an air environment with the relative humidity smaller than or equal to 60%, inert atmosphere protection is not needed, the preparation process is simplified, and the production cost is reduced.

The invention provides a high-stability electron transport layer and a perovskite solar cell. A preparation method of the electron transport layer comprises the following steps: evaporating a layer of fullerene (C60) on a substrate on which a hole transport layer and a perovskite thin film layer are prepared; a layer of graphite-like phase carbon nitride (g-C3N4) is spin-coated on the C60; and finally, depositing a layer of tin oxide (ALD-SnO2) by utilizing atomic layer deposition. The g-C3N4 has good electrical conductivity, not only can fill some gaps between C60 and ALD-SnO2, but also can interact with C60 and ALD-SnO2, so that the C60 and ALD-SnO2 are attached more tightly, and the interface stability is improved. The prepared high-stability electron transport layer is applied to a perovskite solar cell device, and the stability of a perovskite solar cell is remarkably improved.

The invention discloses a wide-band-gap perovskite thin film based on interface engineering regulation and control and a preparation method and application thereof. The preparation method comprises the following steps: dissolving 4-hydroxyphenylethyl amine iodide powder in an FA0. 8Cs0. 2Pb (I0. 6Br0. 4) 3 precursor solution to obtain a wide-band-gap perovskite precursor solution with the doping concentration of 0.5-2mol%; the wide-band-gap perovskite thin film is obtained by performing two-step spin coating on the wide-band-gap perovskite precursor solution on a substrate and then performing two-step annealing, and when the wide-band-gap perovskite thin film is applied to a wide-band-gap perovskite solar cell or a laminated wide-band-gap perovskite solar cell, the stability and the performance of a device can be improved. The method is mainly characterized by improving the uniformity of the film, reducing non-radiative recombination, prolonging the service life of current carriers, improving filling factors and current density and improving the photoelectric conversion efficiency. According to the invention, generation of a two-dimensional phase is inhibited, a dipole layer is generated on an interface, energy level matching between a perovskite light absorption layer and an electron transport layer is promoted, interface connection is enhanced, and carrier transport capability is improved.

The invention relates to the technical field of electrochromism, in particular to an electrochromism device which comprises a perovskite battery and an electrochromism device which are arranged in a stacked mode. The perovskite cell comprises a bottom electrode layer, an electron transport layer, a perovskite layer, a hole transport layer and a top electrode layer which are stacked in sequence. The electrochromic device comprises a top electrode layer, an electrochromic layer, an electrolyte layer and a counter electrode layer which are sequentially arranged in a stacked mode. The top electrode layer is a common transparent electrode of the perovskite cell and the electrochromic device, and the bottom electrode layer and the counter electrode layer are electrically connected through an on-off element; the open-circuit voltage of the perovskite cell is greater than the color-changing voltage of the electrochromic device. According to the electrochromic device, integration of the perovskite battery and the electrochromic device is achieved, color changing can be achieved under the condition that the electrochromic device is not connected with an external power source, self-power-supply and self-driving are achieved, and portable scene application is facilitated.

The invention relates to the technical field of perovskite solar cell functional thin film packaging, in particular to a solar cell with a perovskite active layer packaged by a double-sided thin film and a preparation method of the solar cell. Al2O3 is used for depositing a layer of Al2O3 thin film between the perovskite active layer and a P-type carrier transport layer (hole transport layer HTL); a layer of SiO2 thin film is deposited between a perovskite active layer and an N-type carrier transport layer (electron transport layer ETL), and a double-sided thin film wrapping layer is formed by an Al2O3 thin film and the SiO2 thin film; through the design and preparation method of the Al2O3 / SiO2 double-sided thin film packaging perovskite active layer, the core stability problem of the perovskite active layer is effectively solved. The double-sided packaging structure can efficiently block water and oxygen permeation, and the perovskite is prevented from being decomposed due to water and oxygen erosion; meanwhile, diffusion of metal electrode ions to a perovskite layer and migration of halogen ions in perovskite to the electrode can be inhibited, bidirectional damage is reduced, and the sensitivity of perovskite to water and oxygen and performance degradation caused by interface ion migration are relieved fundamentally.

The invention belongs to the technical field of solar cells, and particularly relates to a perovskite solar cell with cysteine-silver clusters implanted into a perovskite active layer in a targeted mode, a cysteine-silver cluster colloidal solution is prepared by adopting a liquid-phase pulse laser irradiation technology, the cysteine-silver clusters serve as an additive and are implanted into the perovskite solution, and the perovskite active layer is prepared. And sequentially spin-coating a hole transport layer, a perovskite layer and an electron transport layer, and finally evaporating a metal electrode to prepare the perovskite solar cell with the cysteine-silver cluster target implanted perovskite active layer. The cysteine-silver cluster is implanted into the perovskite solution, and the smaller critical dimension of the cysteine-silver cluster can be used as a nucleation site, so that the growth of perovskite crystals is regulated and controlled, the defects of the perovskite thin film are passivated, the residual stress of the thin film is released, the formation of gradient energy levels of the perovskite layer and the electron transport layer is promoted, and the extraction and transmission of electrons are improved; the perovskite solar cell with higher efficiency is obtained, the implantation mode is convenient, and the preparation process is simple.