5316 results about "Photoelectric conversion efficiency" patented technology

The invention relates to a preparation method of a solar cell, the solar cell and a photovoltaic module, and the solar cell comprises a substrate which comprises a first surface and a second surface. The first surface comprises a metal area and a non-metal area, and the electrode is arranged in the metal area. The metal area is provided with the first suede structure, the non-metal area is provided with the second suede structure, and the reflectivity of the second suede structure is smaller than that of the first suede structure, so that the first suede structure in the metal area is gentle, and the fluctuation amplitude of the second suede structure in the non-metal area is large. The doping layer is arranged in the metal area to prepare the emitting electrode, the uniformity of the doping layer is high due to the gentle first suede structure, and the photoelectric conversion efficiency and stability of the metal area can be improved. The second suede structure with the large fluctuation amplitude improves the sunlight absorption capacity of the non-metal area. And the first suede structure and the second suede structure are respectively provided with a passive film layer and an anti-reflection film layer, so that the efficiency and the performance of the battery are improved.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a photovoltaic module, so as to avoid the electric leakage condition of doped regions with different doping types, thereby improving the photoelectric conversion efficiency. The solar cell comprises a substrate which comprises a front surface and a back surface which are oppositely arranged; the back surface of the substrate comprises a first doped region and a second doped region which are sequentially arranged at an interval, and an insulating region arranged between the first doped region and the second doped region; the doped polycrystalline silicon passivation contact structure is arranged in the first doped region, the doped amorphous silicon structure is arranged in the second doped region, and the passivation layer is arranged in the insulating region; the doped polycrystalline silicon passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are sequentially laminated on the back surface of the substrate; the doped amorphous silicon structure comprises a doped amorphous silicon layer, and the doped polycrystalline silicon layer and the doped amorphous silicon layer are different in doping type; wherein the passivation layer is not overlapped with the doped polycrystalline silicon passivation contact structure and the doped amorphous silicon structure respectively along the thickness direction of the substrate.

The invention belongs to the technical field of perovskite solar cells, and particularly discloses a carbazolyl conjugate enhanced self-assembled monomolecular layer and a preparation method and application thereof, and the self-assembled monomolecular layer takes carbazole as a substrate and an aromatic ring as a conjugate linking group. The highly conjugated molecular system can induce molecular orbital overlap, increase dipole moment, promote formation of a compact self-assembled monomolecular film, reduce interface non-radiative recombination and enhance hole extraction and transmission performance. Meanwhile, phosphoric acid is used as an anchoring group, so that firm self-assembly of SAM molecules on the surface of the ITO substrate can be realized. The SAM material is simple in preparation method, high in yield, low in preparation cost and good in stability. When the compound is applied to a trans-perovskite solar cell as a hole transport layer, photoelectric conversion efficiency exceeding 24.6% can be obtained, and the compound is an organic semiconductor material with a very good prospect.

The embodiment of the invention relates to the photovoltaic field, and provides a main-grid-free back contact battery and a photovoltaic module, and the main-grid-free back contact battery comprises a battery substrate which is provided with a first welding region and a second welding region which are alternately arranged along a first direction, two edge regions which are opposite along a second direction, and a central region located between the two edge regions; the first fine grid and the second fine grid are positioned on the battery substrate and are alternately arranged along a second direction; the bonding pads are located in the edge area, and each bonding pad is at least in contact connection with two adjacent homopolar fine grids; the welding spots are located in the central area, each welding spot is in contact connection with each same-polarity fine grid, and M same-polarity fine grids are arranged between the bonding pads and the welding spots which are adjacent in the second direction; the connecting line is in contact connection with the bonding pad and is also in contact connection with at least one welding spot close to the bonding pad along the second direction; the welding area is a first welding area and the same-polarity fine grid is a first fine grid, and / or the welding area is a second welding area and the same-polarity fine grid is a second fine grid, so that the photoelectric conversion efficiency of the main-grid-free back contact battery is at least improved.

The invention relates to a backside illuminated image sensor, a preparation method thereof and electronic equipment. The backside illuminated image sensor comprises a substrate, a grating, photodiodes and target isolation structures, wherein the photodiodes and the target isolation structures are located on the first surface of the substrate, are alternately arranged in the first direction parallel to the first surface and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the target isolation structures over the trench isolation structures are arranged in a one-to-one manner; the photodiode comprises a SiAs laminated layer and a SiAs cover layer which are arranged along a direction away from the substrate, and a SiP layer which penetrates through the SiAs laminated layer along a first direction and a direction towards the substrate; the target isolation structure comprises a protruding part higher than the top surface of the photodiode; the grating and the protruding parts are prepared in the same process step at the same period. Signal crosstalk of the BSI image sensor and unnecessary damage caused by IMP can be avoided, and photoelectric conversion efficiency can be improved.

The invention belongs to the technical field of perovskite solar cells, and particularly discloses a self-assembly monomolecular film hole transport material based on diphosphoric acid and a preparation method and application thereof.The diphosphoric acid serves as an anchoring group, the chelation between the material and a conductive base can be effectively enhanced, the self-assembly characteristic of the material on the surface of a substrate is improved, and the hole transport efficiency is improved. The compact and smooth self-assembled monomolecular film is formed. Meanwhile, the electron and space effects of alkyl chains or benzene ring connecting units are regulated and controlled, so that the molecular stereo configuration and energy level matching are optimized. The material disclosed by the invention is simple in synthesis steps and low in preparation cost, and industrial synthesis of the material can be realized. When the material is applied to an inverted perovskite solar cell as a hole transport layer, photoelectric conversion efficiency exceeding 24.7% and excellent device stability performance can be obtained, and huge commercial prospects are shown.

The invention discloses a solar cell and a photovoltaic module. Wherein the semiconductor substrate comprises a first surface and a second surface which are opposite to each other, and a side surface connected with the first surface and the second surface; in the direction from the first face to the second face, the side face comprises a first area and a second area which are sequentially arranged, the first area is provided with a first texture structure, and the second area is provided with a second texture structure. The first texture structure and the second texture structure can enable light incident to the side face to be reflected and refracted for multiple times, the advancing direction of the incident light on the side face of the semiconductor substrate is changed, the optical path is prolonged, the light trapping effect is generated, and generation of photon-generated carriers is increased, so that when the side face of the semiconductor substrate is provided with the first texture structure and the second texture structure, the light trapping effect is improved. More light rays can be absorbed and utilized by the side surface of the semiconductor substrate, and the photoelectric conversion efficiency of the solar cell can be improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a manufacturing method thereof, and a photovoltaic module, and the back contact cell comprises a first doped region and a second doped region which are located on a substrate and are spaced from each other; the passivation layer is located on the sides, away from the substrate, of the first and second doped regions; the first main grids and the second main grids are alternately arranged in the first direction, the first fine grids and the second fine grids are alternately arranged in the second direction, the first main grids and the fine grids are right opposite to the first doped region, and the second main grids and the fine grids are right opposite to the second doped region; at least part of the main grids comprise non-contact parts and at least one contact part in contact connection with the non-contact parts, the contact parts penetrate through the passivation layer and are in contact connection with the doped region, and each contact part is at least located in a gap between two adjacent same-polarity fine grids; and the main grid is the first main grid, the doped region is the first doped region and the same-polarity fine grid is the first fine grid, and / or the main grid is the second main grid, the doped region is the second doped region and the same-polarity fine grid is the second fine grid, so that the photoelectric conversion efficiency of the cell is improved.

The present invention discloses a self-assembled monolayer hole transport material based on an alkyl polyphosphate anchoring group, a synthesis method thereof, and an application in an inverted perovskite solar cell. The present invention uses carbazole or 3,6-diphenylcarbazole with good hole transport properties as a parent core, and achieves complete coverage and stable self-assembly of the material on the substrate surface by improving the anchoring group from traditional alkyl monophosphate to alkyl diphosphate and triphosphate. The synthesis method of the present invention is simple and the synthesis cost is low. The prepared material can achieve the dual functions of hole transport and perovskite interface passivation, while enhancing the self-assembly strength and stability. When the material is used as a hole transport layer in an inverted perovskite solar cell, a photoelectric conversion efficiency of >20% can be obtained without doping, and the material has broad application prospects.

The invention discloses a self-assembled monomolecular layer hole transport material, a hole transport layer and a battery thereof. According to the present invention, the compound having different anchoring groups and represented by the formula (I) can be subjected to firm self-assembly with the substrate surface through the chemical bonding manner, such that the good coverage rate is provided, the film forming quality is increased, and the transmission performance is improved; and meanwhile, the material has a rigid conjugate large-plane condensed ring core structure, so that the hole transmission performance of the material is ensured, and the photovoltaic performance is favorably improved. When the material is applied to a perovskite solar cell to prepare a hole transport layer, the hole extraction capability can be enhanced, and the open-circuit voltage, the filling factor and the photoelectric conversion efficiency of a device can be improved.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact battery and a preparation method thereof, and a photovoltaic module, and the back contact battery comprises a battery body of which the back surface comprises a first edge region, a central region and a second edge region which are sequentially arranged along a first direction; the first fine grid and the second fine grid are positioned in the central region and are alternately arranged along a second direction; the edge bus bar extends along the second direction, is positioned in the first edge region or the second edge region, and is connected with the plurality of first or second fine grids; the edge bonding pad is located on the portion, close to the first edge area or the second edge area, of at least one fine grid and electrically connected with the edge bus bar, and the fine grid is one of the first fine grid and the second fine grid; one end of the connecting section is connected with one side, close to the edge bus bar, of the edge bonding pad or connected with one of the two opposite sides of the edge bonding pad in the second direction, the other end of the connecting section is connected with the edge bonding pad or one fine grid, and at least the photoelectric conversion efficiency of the back contact battery can be improved.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and electronic equipment, and relates to the technical field of integrated circuits, the backside illuminated image sensor comprises a substrate, and photodiodes and laminated target isolation structures which are located on a first surface of the substrate, are alternately arranged along a first direction parallel to the first surface, and extend towards the substrate; the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures and the laminated target isolation structures right above the trench isolation structures are arranged in a one-to-one manner; the laminated target isolation structure comprises isolation parts and insulation parts which are sequentially and alternately laminated along a second direction deviating from the substrate; the photodiode comprises at least two photosensitive layers which are sequentially stacked in the second direction, the longitudinal sections of the photosensitive layers are T-shaped, one photosensitive layer makes contact with the first surface of the substrate, substrate damage caused by ion implantation can be avoided, and meanwhile the photoelectric conversion efficiency and the quantum efficiency are improved.

This invention discloses a fluorene-based organic small molecule hole transport material and its applications. The general structural formula of the fluorene-based organic small molecule hole transport material is as follows: where n = 1-4, and R represents the hole transport capacity. This fluorene-based organic small molecule hole transport material is used as an undoped hole transport material in perovskite solar cell devices. By introducing dicarboxylic acid groups onto the fluorene-based organic small molecule hole transport material, when used in an inverted perovskite solar cell device, it can form chemical bonds with the hydroxyl groups of the glass conductive substrate, forming a directionally aligned self-assembled layer on the surface of the glass conductive substrate. This effectively improves the charge transport capability at the interface and increases the photoelectric conversion efficiency of the perovskite solar cell device. Furthermore, since this perovskite solar cell device does not contain lithium salts, it exhibits high water and oxygen stability. In addition, the synthesis process of this fluorene-based organic small molecule hole transport material is simple, and the raw materials are inexpensive and readily available, making it highly valuable for practical applications.

The invention relates to a solar cell and a manufacturing method thereof. The solar cell comprises a substrate, a first electrode and a second electrode, the front surface of the substrate comprises a first metallization region and a first non-metallization region, the first metallization region is provided with a first pyramid structure, the first non-metallization region is provided with a second pyramid structure, the spire of the first pyramid structure is higher than that of the second pyramid structure, and the first metallization region is provided with a first diffusion doping region; the back surface of the substrate comprises a second metallization region and a second non-metallization region, a tunneling layer and a semiconductor doping layer are sequentially laminated on one side, far away from the substrate, of the second metallization region, and the second non-metallization region is provided with a third pyramid structure; the first electrode is arranged in the first metallization region, and the first electrode is electrically connected with the first diffusion doping region; and the second electrode is arranged in the second metallization region and is electrically connected with the semiconductor doping layer. The short-circuit current output and the overall photoelectric conversion efficiency of the cell are improved, and the double-sided rate of the cell is improved.

The invention discloses a back contact solar cell, an assembly and a system. The back contact solar cell comprises a silicon substrate, the back surface of the silicon substrate comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged at intervals, and each of the first areas and the second areas comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area of the first area comprises a first passivation layer, a selective transmission layer and a first metal electrode which are sequentially stacked on the surface of the silicon substrate from inside to outside. According to the back contact solar cell, the passivation layer and the selective transmission layer are arranged in the first region and combined with the passivation anti-reflection layer, the excellent passivation contact effect is achieved, a narrow-band-gap highly-doped silicon material does not need to be used, the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and then the performance of the back contact solar cell is improved.

The invention provides a solar cell, which comprises a silicon substrate having a backlight surface and a light facing surface which are opposite, the backlight surface comprises first areas and second areas which are alternately arranged, the first areas of the backlight surface are provided with first pyramid structures, the light facing surface is provided with second pyramid structures, the first pyramid structures are provided with first passivation contact layers, and the second pyramid structures are provided with second passivation contact layers; the first pyramid structure is provided with a first passivation contact layer, the reflectivity of the first area is 5%-14%, the second pyramid structure is provided with a passivation antireflection layer, the reflectivity of the light facing face is 5%-14%, the second area is provided with a second passivation contact layer, the reflectivity of the second area is 25%-50%, and the ratio of the area of the first area to the total area of the backlight face is 40%-70%. The light trapping effect of the light-facing surface is further improved by setting different shapes in different areas of the light-facing surface and the backlight surface, and the passivation effect and the carrier transport effect of the surface of the back pyramid structure are balanced while the light trapping effect of the backlight surface is improved; the photoelectric conversion efficiency and the double-sided rate of the solar cell are improved; and the appearance color difference of the receiving surface is improved.

The invention relates to a backside illuminated image sensor and a preparation method thereof, and an electronic device, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate which comprises an isolation layer and a plurality of first isolation structures which are arranged at intervals in a first direction parallel to the surface of the substrate; forming first isolation parts in the substrate, wherein the first isolation parts and the first isolation structures are arranged in a one-to-one manner and extend to the isolation layer through the back surface of the substrate; removing the substrate between the adjacent first isolation parts to obtain side wall semiconductor layers located on the side surfaces of the first isolation parts and first grooves between the adjacent side wall semiconductor layers; the size of the side wall semiconductor layer is gradually increased in the direction close to the isolation layer. And forming a bottom photosensitive layer in the first groove, and epitaxially growing a top photosensitive layer on the bottom photosensitive layer. And forming a second isolation part connected with the first isolation part in a gap between the adjacent top photosensitive layers, thereby improving the photoelectric conversion efficiency and the quantum efficiency.

The invention belongs to the field of photovoltaic glass coatings, and particularly relates to a super-hydrophilic anti-reflection wear-resistant self-cleaning coating for room-temperature curing of photovoltaic glass, which takes nano silicon dioxide sol as a main film-forming agent to cure and form a film and comprises the following raw materials in parts by weight: 55-90 parts of deionized water, 9-20 parts of nano silicon dioxide sol, 1-10 parts of a silane coupling agent and 0.001-1 part of nano titanium dioxide. The coating is prepared from the following components in parts by weight: 0.01-1 part of a surfactant, 0.01-1 part of modified polyvinyl alcohol, 0.01-1 part of water-based acrylic resin, 0.001-1 part of an antistatic agent, 1-5 parts of a curing agent, 1-5 parts of a flatting agent and 0.1-1 part of a wear-resistant agent. The super-hydrophilic anti-reflection wear-resistant self-cleaning coating has super hydrophilicity, the water contact angle is below 10 degrees, the hydrophilicity, the antistatic property, the anti-reflection property, the wear resistance and other properties of glass can be remarkably improved, and when the super-hydrophilic anti-reflection wear-resistant self-cleaning coating is applied to photovoltaic module glass, the photoelectric conversion efficiency in photovoltaic power generation can be improved.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, and a photovoltaic module, the photovoltaic cell comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite, and the first surface is provided with first areas and second areas which are alternately arranged along a first direction; the substrate in the second area comprises a bottom surface which is recessed towards the interior of the substrate and a slope which is connected with the bottom surface and the first area, the slope inclines towards the first area, and the bottom surface and the slope define a groove; the bottom surface is a first suede comprising a plurality of first pyramids, the slope is a second suede comprising a plurality of second pyramids, an included angle formed by spire of the first pyramids is smaller than an included angle formed by spire of the second pyramids, and the height of the first pyramids is smaller than that of the second pyramids. The embodiment of the invention is at least beneficial to improving the absorption and utilization rate of the second region on light, so as to improve the photoelectric conversion efficiency of the photovoltaic cell.

The invention relates to a production method of a battery piece. The production method comprises the following steps: printing a grid line electrode on the battery piece; sintering the grid line electrode; cutting the battery piece; forming a passivation layer on the cutting edge of the battery piece; and applying voltage and laser to the battery piece so as to anneal the grid line electrode and the passivation layer. According to the application, the voltage and the laser are applied to the battery piece to anneal the grid line electrode, so that the contact resistance between the grid line electrode and the battery piece can be reduced; and the passivation layer is annealed, so that the passivation degree of the passivation layer on the cutting edge can be improved, and the photoelectric conversion efficiency of the produced battery piece is further improved. According to the method, after the passivation layer is formed on the cutting edge of the battery piece, the voltage and the laser are applied to the battery piece, a grid line electrode and the passivation layer can be annealed at the same time, the time for repeatedly arranging equipment for applying the voltage and the laser is saved, the passivation degree of the passivation layer is improved, the production time of the battery piece is shortened, and the production efficiency of the battery piece is improved. And the production efficiency of the battery piece is improved.

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first surface including a first region and a second region adjacent to a first cut side; the second region comprises a step structure, an included angle is formed between the side wall of the step structure and the thickness direction of the semiconductor substrate, the first region is provided with a first pyramid structure, and the bottom wall of the step structure is provided with a first texture structure or a second pyramid structure; the first doping layer is arranged on the first region, and the height of the bottom wall of the step structure is lower than that of the first doping layer; the first passivation layer is arranged on one side, deviating from the semiconductor substrate, of the first doping layer and is arranged on the second region; the second passivation layer is arranged on the edge, close to the second area, of the first area, part of the second area and the first cutting side face. The passivation effect near the cutting side face is improved, carrier recombination is reduced, and the photoelectric conversion efficiency is improved.

The invention discloses a back contact cell, a photovoltaic module and a photovoltaic system.The back contact cell comprises first areas, second areas and isolation areas which are arranged on the shady face of a silicon substrate, the first areas and the second areas are alternately arranged, and the isolation areas are located between the first areas and the second areas; the first region comprises a first doped conductive layer, the second region comprises a second doped conductive layer, and the doping type of the first doped conductive layer is opposite to that of the second doped conductive layer; the side, close to the isolation area, of the first area is provided with a concave structure. According to the invention, efficient isolation of different doped regions on the back surface of the back contact cell can be realized, so that the photoelectric conversion efficiency of the back contact cell is improved.

The invention is applicable to the technical field of back contact solar cells, and provides a back contact solar cell, a photovoltaic module and a photovoltaic system.The back contact solar cell comprises a silicon substrate, a plurality of p-type doped regions and a plurality of n-type doped regions which are sequentially and alternately arranged on the back face of the silicon substrate in the first direction, and p-type fine grids electrically connected with the p-type doped regions; the n-type fine grids are electrically connected with the n-type doped regions, the isolation regions are arranged between the adjacent p-type doped regions and the n-type doped regions, and in the first direction, the ratio C1 of the width of the isolation regions to the width of the n-type doped regions is # imgabs0 #. And the photoelectric conversion efficiency of the solar cell is improved.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, and a photovoltaic module, the photovoltaic cell comprises a substrate, the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface comprises non-metal regions and metal regions which are alternately arranged along a first direction, the non-metal regions are first suede surfaces, and the metal regions are second suede surfaces; the first suede comprises a plurality of first pyramids with rough surfaces; the first pyramid comprises a main body part and at least two wrapping parts which are located on the side face of the main body part and connected in the direction perpendicular to the side face. Wherein the main body part is a pyramid-like pyramid with a plurality of side edges, the side surfaces are connected with the adjacent side edges, and the main body part further comprises a bottom surface connected with the plurality of side surfaces; the wrapping part extends towards the direction close to the bottom face in the second direction, one end, away from the bottom face, of the wrapping part comprises a protruding block, the protruding block is in a protruding shape relative to the bottom face, and the second direction is the extending direction of the side edges, so that the reflectivity of the non-metal area to light is at least reduced, and the photoelectric conversion efficiency of the photovoltaic cell is improved.

The invention discloses a floating type photovoltaic platform device capable of actively adjusting the angle of a photovoltaic module, which comprises floating bodies, a photovoltaic mechanism, a central control system, connecting floating bodies and gravity anchors, and is characterized in that the photovoltaic mechanism is mounted on the floating bodies, the floating bodies are connected with the gravity anchors, the gravity anchors are placed in a water area, the plurality of floating bodies are connected through the connecting floating bodies, and the central control system is connected with the central control system. The central control system is installed on the connecting floating body, the central control system is respectively connected with the floating body and the photovoltaic mechanism, the floating body comprises an adjusting air cushion and a supporting floating body, the adjusting air cushion is arranged on the supporting floating body, the photovoltaic mechanism is arranged on the adjusting air cushion, and the supporting floating body is respectively connected with the connecting floating body and the gravity anchor. The sun position and the illumination intensity are monitored in real time through the central control system, the angle of the photovoltaic mechanism is actively adjusted through the adjusting air cushion, it is ensured that the photovoltaic assembly can receive sunlight at the optimal angle all the time, and therefore the photoelectric conversion efficiency is remarkably improved.

The invention relates to the field of photovoltaic technology, in particular to a solar cell, a photovoltaic module and a preparation method of the solar cell, the solar cell comprises a substrate, the substrate comprises a first surface and a second surface, the first surface comprises a first area and a second area, and the second surface comprises a third area and a fourth area, the first diffusion layer is located on the first area or located in the substrate corresponding to the first area, the first diffusion layer is opposite to the substrate in conductive type, the second diffusion layer is located in the substrate corresponding to the third area, the second diffusion layer is opposite to the first diffusion layer in conductive type, and the first passivation layer is located on the third area and the fourth area. The first passivation layer covers the second diffusion layer and is in contact with the substrate, the first electrode electrically connected with the first diffusion layer is arranged on the first area, the second electrode electrically connected with the second diffusion layer is arranged on the third area, and the open-circuit voltage and the short-circuit current of the solar cell are improved through the design, and the photoelectric conversion efficiency is improved.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, so as to improve the photoelectric conversion efficiency of the solar cell comprising a fragmented cell, greatly reduce the mechanical damage of the fragmented cell, greatly reduce the hidden crack possibility of a photovoltaic module comprising the fragmented cell, and improve the production efficiency of the photovoltaic module. And the product yield is further improved. The preparation method of the solar cell comprises the following steps: providing a whole solar cell; a first laser device is adopted to form positioning grooves in the two ends of the to-be-segmented area respectively; a second laser device is adopted to heat the to-be-segmented area from the positioning groove until the other positioning groove is finished; spraying cooling liquid to the heated to-be-segmented area by adopting a spraying device, so that the whole solar cell is cracked in the to-be-segmented area along the first direction to form at least two segmented cells; the cooling liquid comprises oxidizing substances, and the cross section is a surface hydroxylated silicon surface; and forming a passivation layer on the fracture surface.

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and aims to generate a strong electric field on the front surface of a substrate layer through a first passivation layer, separate majority carriers from minority carriers, reduce the carrier recombination rate on one side of the front surface of the back contact cell and improve the photoelectric conversion efficiency of the back contact cell. And moreover, the dependence on chemical passivation by using hydrogen is reduced, so that the problem of ultraviolet light induced degradation in the existing battery technology is inhibited and even solved. The back contact cell includes a substrate layer, and a first passivation layer disposed on a front surface of the substrate layer. The material of the first passivation layer includes a high work function material or a low work function material. The work function of the high work function material is greater than 4.8 eV; or the work function of the low work function material is less than 4.3 eV. The photovoltaic module comprises a battery string and a packaging layer. The battery string is formed by electrically connecting a plurality of back contact batteries provided in the first aspect and various implementation modes thereof; the encapsulation layer covers the surface of the battery string.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a manufacturing method thereof, a back contact laminated cell and a photovoltaic module, and the manufacturing method comprises the steps: providing a substrate with a first surface and a second surface which are opposite to each other, and the second surface comprises a first region and a second region which are alternately arranged along a second direction; forming a laminated structure comprising a tunneling layer, a doped polycrystalline silicon layer and a first protection layer which are stacked on the first region; forming an initial second passivation lamination layer which covers the second surface and comprises an intrinsic amorphous silicon film and a doped amorphous silicon film which are stacked; forming a second protection layer on one side, far away from the substrate, of the doped amorphous silicon film; etching the first region by adopting a first laser etching process; and taking the second protection layer on the second region as an etching barrier layer, taking the first protection layer as an etching stop layer, and removing the initial second passivation lamination layer or the second protection layer and the initial second passivation lamination layer remaining on the first region by adopting a first etching solution, thereby at least facilitating the improvement of the photoelectric conversion efficiency of the back contact battery.

The invention relates to ultrahigh-transmittance anti-reflection multifunctional coated photovoltaic glass and a preparation method thereof, and belongs to the technical field of photovoltaic glass, the photovoltaic glass comprises a photovoltaic glass substrate, the photovoltaic glass substrate is provided with a high-transmittance reflective coating, the high-transmittance reflective coating comprises a silicon dioxide layer, a titanium dioxide layer and a nanometer material layer, and the nanometer material layer is arranged on the silicon dioxide layer. The silicon dioxide layer and the titanium dioxide layer are arranged between the photovoltaic glass substrate and the nanometer material. The preparation method comprises the following steps: S1, preparing raw materials; s2, preparing a coating; s3, coating process; s4, performing surface treatment on the nano structure; s5, coating curing and surface treatment; and S6, testing and evaluating the performance. According to the ultrahigh-transmittance anti-reflection multifunctional coated photovoltaic glass, the performance and durability of a photovoltaic cell can be remarkably improved, by arranging the high-transmittance anti-reflection coating, the light transmittance of the photovoltaic glass is improved, the overall photoelectric conversion efficiency can be improved by 5-8%, and light reflection loss is remarkably reduced.