The invention provides a TFT-LCD (thin film transistor-liquid crystal display) array panel structure and a production method thereof. An anti-ESD (anti-electrostatic discharge) element of which a gate metal layer is in direct contact with a source/drain metal layer is produced outside a TFT array in order to prevent each process station after source/drain metal deposition from being injured by static electricity, so that the product percent of pass can be increased; meanwhile, by correspondingly changing active mask, silicon islands are formed in the process of via-hole mask, consequently, the process steps are simplified, and the production cost is reduced; meanwhile, by correspondingly changing gate mask, active mask and source/drain mask, the gate metal is covered by the source/drain metal in the area of a VT/FPC/IC pad, consequently, the electrode corrosion of the gate metal layer can be reduced, and in the extending area of a fanout line, the line resistance can be decreased; and furthermore, before the deposition of the gate metal layer, a silicon nitride layer is first formed, so that the injuries of a substrate caused by dry etch can be reduced.