The application discloses a
graphene short channel preparation method based on lateral
etching, which comprises the following steps: firstly, forming a
graphene layer and a
metal layer on a substrate, and then forming a hard sacrificial
mask on the
metal layer; then, removing the
metal layer outside the
hard mask area by a chemical
etching method, and
etching the metal layer laterally at the edge of the
mask area to form a
graphene short channel; and finally, depositing metal based on the hard sacrificial
mask to form a metal
electrode on the other side. The preparation method of the application can obtain a graphene channel length which is not limited by the minimum
line width of a patterning
process equipment, and the graphene is not in contact with organic contaminants such as
photoresist throughout the whole process, so that a higher channel carrier speed and a lower
ohmic contact resistance are realized, the types of electrodes on both sides can be independently changed to construct an internal
potential field, a high-speed and low-recombination-rate graphene channel is obtained, and then a high-speed photoelectric
detector is realized, and the process is easy to control and has an array potential.