The invention provides a method for reducing Ohmic contact resistivity of a gallium nitride high electron mobility transistor. The method comprises the following steps: a photoresist layer is formed by coating photoresist on a wafer surface via spin coating operation, a source electrode area and a drain electrode area are etched on the photoresist layer via photoetching processes, and the source electrode area and the drain electrode area are exposed on the wafer surface; argon ions are sputtered on parts, positioned in the source electrode area and the drain electrode area, of the wafer surface; the argon ions are enabled to bombard the wafer surface; a source metal electrode and a drain metal electrode are formed by sputtering metal on the parts, positioned in the source electrode area and the drain electrode area, of the wafer surface; the photoresist layer is peeled off, and the source metal electrode and the drain metal electrode are enable to be in Ohmic contact with each other via adoption of high temperature rapid thermal annealing processes. Via the above mode, the method for reducing Ohmic contact resistivity of the gallium nitride high electron mobility transistor can help increase concentration of N vacancy in a semiconductor, and low Ohmic contact resistivity can be obtained via high temperature thermal annealing alloying technologies.