11results about How to "Reduce contact resistivity" patented technology

The invention relates to a P-type double-sided passivation selective contact TOPCon cell structure and a preparation method thereof, and belongs to the technical field of solar cells. According to the cell prepared by the invention, the short-circuit current and the photoelectric conversion photoelectric efficiency are improved, a polycrystalline silicon doping layer and a tunneling oxide layer in a non-metal contact region outside a front electrode position are removed through laser film opening, and a selective local contact structure is formed in a metal contact region at the electrode position; current parasitic absorption and contact recombination between metal and the surface of crystalline silicon are reduced; the PN junction is manufactured on the back face, front face light absorption is prevented from being affected, low-power laser is adopted to ensure that the back face PN junction is not damaged by the laser in a non-metal contact area outside the back face electrode position, and then back face current parasitic absorption is greatly reduced by etching and cleaning a back face tunneling oxide layer of the area.

This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.

This invention discloses a TopCon battery and its fabrication method. The method includes: providing an N-type silicon substrate; the N-type silicon substrate includes a front side and a back side; fabricating a first tunneling oxide layer and a first doped layer on the back side; fabricating a second tunneling oxide layer and a second doped layer on the front side; removing the second tunneling oxide layer and the second doped layer from a predetermined texturing area on the front side to expose a portion of the N-type silicon substrate, and texturing the exposed portion of the N-type silicon substrate surface to form a textured structure; screen printing and high-temperature sintering the first doped layer on the back side and the second doped layer on the front side to form a first electrode in contact with the first doped layer on the back side, and a second electrode in contact with the second doped layer on the front side. Using the above method, the contact resistivity between the electrode and the front surface field layer is reduced, the fill factor of the battery is reduced, and thus the conversion efficiency of the battery is improved.

The invention discloses a semiconductor composite material and a preparation method and application thereof. The semiconductor composite material comprises a semiconductor substrate, a functional layer and a first metal layer which are stacked in sequence, the functional layer comprises a doped layer; the doping layer comprises a compound AB and a doping element X doped in the compound AB; in the compound AB, A comprises Zn element, and B comprises at least one element of Se, Te or S; the doping element X comprises at least one of B, Al, Ga, In, Tl, Sc, Y, lanthanides or actinides. The functional layer prepared by the method has the characteristics of low work function and high electron concentration at the same time, can effectively induce selective collection of electrons, and can realize good contact between the semiconductor substrate and the first metal layer, so that the obtained semiconductor composite material has low contact resistivity; therefore, the energy loss generated when the current passes through the metal-semiconductor interface is effectively reduced, and the overall energy consumption of the device is reduced.

This application relates to the photovoltaic field, providing a solar cell, a photovoltaic module, and a method for fabricating a solar cell. The solar cell includes: a substrate having a front side and a back side, the back side including a textured region and a flat region adjacent to the textured region, the textured region having a doped surface field, and the doped surface field containing a doped element, which is N-type or P-type; a tunneling dielectric layer located on the flat region of the back side of the substrate; a doped conductive layer located on the surface of the tunneling dielectric layer away from the back side of the substrate, the doped conductive layer containing a doped element, the type of which is the same as the type of which is doped in the doped surface field; and a back electrode, a portion of the bottom surface of the back electrode located within the doped conductive layer and in contact with the doped surface field, which can at least reduce the contact resistance of the solar cell.

The application provides a preparation method of a solar cell and the solar cell. The preparation method of the solar cell comprises the following steps: providing a solar cell intermediate; forming a first paste layer on the solar cell intermediate by using a patterned inkjet printing process, wherein the thickness of the first paste layer is 0.5-2 μm; forming a second paste layer on the first paste layer by using a screen printing process; and simultaneously sintering the first paste layer and the second paste layer to form a fine grid with a composite structure. The preparation method of the solar cell and the solar cell can reduce the amount of silver paste and the contact resistivity.

The application provides a crystalline silicon solar cell, a preparation method and application thereof. The crystalline silicon solar cell comprises a substrate, a thin film layer and an electrode which are sequentially arranged. The thin film layer comprises a first thin film area and a second thin film area. The thickness of the first thin film area is greater than that of the second thin film area. The electrode is arranged on the second thin film area and forms a contact with the substrate. By reducing the thickness of the second thin film area which is in contact with the electrode, the contact resistance between the electrode and the substrate is improved, the recombination in the electrode area is reduced, the average open circuit voltage is increased, and the optical performance and the improvement window of the passivation performance of the first thin film area which is not in contact with the electrode are increased. The crystalline silicon solar cell solves the problem that the electrode ablation capacity is incompatible with the thin film composition and thickness, effectively improves the cell efficiency, and the preparation method is compatible with the screen printing high-temperature sintering process, and large-scale mass production at low cost can be realized.

The invention discloses a method for reducing the ohmic contact resistance of a device, a device packaging structure and a packaging method.The method for reducing the ohmic contact resistance of the device comprises the steps that a laser light source is adopted to continuously irradiate a semiconductor device, and the energy of the laser light source is larger than the forbidden band width of a semiconductor material in the semiconductor device. According to the method for reducing the ohmic contact resistance of the device, the device packaging structure and the packaging method, the semiconductor device can be irradiated by laser, so that photon-generated carriers are generated in the semiconductor device, the contact resistivity is reduced, and the ohmic contact performance of the device is improved.

The invention belongs to the technical field of photovoltaic cell equipment, and relates to metallization paste, and an electrode and a photovoltaic cell manufactured by using the metallization paste. 2.0 wt% or less of a vanadium-containing glass system; wherein the specific surface area of the silver powder is 0.7 m < 2 > / g to 2.0 m < 2 > / g, and the average particle size is 0.1 m to 10 m; the weight% is based on the weight of the metallization paste. The present invention provides a screen printable thick film metallization paste for making an electrode electrically interconnected with a transparent conductor for use in a photovoltaic cell. The metallization paste comprises silver powder, and a vanadium-containing glass system that can be cured at a temperature of 350 DEG C to 500 DEG C. The metallization paste can be used to make electrodes for transparent conductors of passivated contact solar cell devices, such as TOPCon-type solar cells.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

This invention provides a P-type passivated contact structure and its preparation method. The P-type passivated contact structure includes a silicon substrate, a first silicon oxide layer, a first polycrystalline silicon layer, a second polycrystalline silicon layer, and a hydrogen-containing dielectric layer. The silicon substrate has a diffusion region near the surface of the first silicon oxide layer. The surface of the first silicon oxide layer near the first polycrystalline silicon layer has a native pinhole defect structure generated by plasma bombardment. The first polycrystalline silicon layer is made of carbon-doped boron-containing polycrystalline silicon, wherein the boron and carbon doping concentrations gradually increase away from the first silicon oxide layer, and the thickness is greater than or equal to 8 nm. The second polycrystalline silicon layer is also made of carbon-doped boron-containing polycrystalline silicon, with a thickness greater than 10 nm. The interfacial silicon oxide surface of this invention has a high density of pinhole defects, and using carbon-doped boron-containing amorphous silicon as the source layer can reduce oxide layer defects caused by interfacial boron enrichment, achieving excellent surface passivation and selective carrier collection, and reducing surface recombination current density.