25results about How to "Reduce contact resistivity" patented technology

The invention relates to a solar cell and a preparation method thereof, and a photovoltaic module, and the preparation method of the solar cell comprises the steps: providing a substrate which comprises a first surface and a second surface which are oppositely disposed along the thickness direction of the substrate; forming a tunneling passivation layer on the first surface of the substrate; based on physical vapor deposition, a first doping layer and a second doping layer are formed at least on the side, away from the substrate, of the tunneling passivation layer in a laminated mode, the doping type of the first doping layer and the doping type of the second doping layer are both P types, doping elements of the first doping layer and the doping elements of the second doping layer are not completely the same, the first doping layer at least comprises gallium elements, and the second doping layer at least comprises gallium elements. The second doping layer at least comprises a boron element, the first doping layer and the second doping layer are both prepared by physical vapor deposition, the doping elements of the first doping layer and the second doping layer are not completely the same, the cost is low, and the passivation performance is good.

The invention relates to a P-type double-sided passivation selective contact TOPCon cell structure and a preparation method thereof, and belongs to the technical field of solar cells. According to the cell prepared by the invention, the short-circuit current and the photoelectric conversion photoelectric efficiency are improved, a polycrystalline silicon doping layer and a tunneling oxide layer in a non-metal contact region outside a front electrode position are removed through laser film opening, and a selective local contact structure is formed in a metal contact region at the electrode position; current parasitic absorption and contact recombination between metal and the surface of crystalline silicon are reduced; the PN junction is manufactured on the back face, front face light absorption is prevented from being affected, low-power laser is adopted to ensure that the back face PN junction is not damaged by the laser in a non-metal contact area outside the back face electrode position, and then back face current parasitic absorption is greatly reduced by etching and cleaning a back face tunneling oxide layer of the area.

The invention discloses a preparation method of a solar cell, the solar cell and a photovoltaic module, and the preparation method comprises the following steps: providing a cell piece, and arranging a transparent conductive layer on a light receiving surface and / or a backlight surface of the cell piece; performing microwave treatment on the transparent conductive layer on the light receiving surface and / or the backlight surface; and preparing an electrode on the surface of the transparent conductive layer. According to the invention, microwave processing is carried out on the transparent conductive layer in the cell, so that the mobility of the transparent conductive layer can be improved, the sheet resistance of the transparent conductive layer can be reduced, the contact resistivity between the transparent conductive layer and the electrode can be reduced, the series resistance of the cell is reduced, the filling factor value is improved, and finally the purpose of improving the cell efficiency is achieved.

This invention relates to the field of semiconductor optoelectronic device technology, specifically to a method and application for reducing the contact resistance of high-Al-content n-AlGaN materials in device manufacturing processes. The method involves surface atom adsorption and annealing of the n-AlGaN layer under a protective gas atmosphere; the atoms are Si and N atoms. This method significantly increases the carrier concentration on the material surface, thereby contributing to excellent ohmic contact performance and reducing the material's contact resistivity. It solves the problem of difficult ohmic contact preparation for high-Al-content n-AlGaN materials, especially the difficulty in forming ohmic contacts after etching. The method is simple and reproducible, effectively avoiding the complexity and instability of existing processes such as acid / alkali corrosion or high-temperature annealing. It ensures large-scale mass production and has no adverse effects on subsequent device fabrication, exhibiting good process compatibility.

The embodiment of the invention provides an N-type IBC battery negative electrode grid line silver paste, an N-type IIBC battery and a preparation method thereof, the N-type IBC battery negative electrode grid line silver paste provided by the embodiment of the invention comprises an organic auxiliary agent, silver powder, an organic binder and doped glass powder, and the doped elements of the doped glass powder are antimony, tellurium and tungsten. The antimony, tellurium and tungsten elements are doped in the glass powder, and the antimony element and phosphorus are pentavalent elements, so that the doping of an N region can be increased; the tellurium and the tungsten have a silver dissolving effect, so that the contact resistivity of the silver grid line can be reduced, the filling factor is improved, and the photoelectric conversion efficiency of the cell is improved; therefore, the problem that the photoelectric conversion efficiency of the N-type IBC battery is poor due to the fact that an n + region cannot be formed in an existing N-type IBC battery is solved.

The present invention provides a roller screen printing device and method for photovoltaic cell grid lines, and relates to the field of photovoltaic solar cell manufacturing. The printing device includes a frame, a screen, a feeder, a roller, a scraper and a storage table. The feeder, the roller and the scraper can be installed on the frame in a lifting manner. The screen is arranged on the frame. The screen is provided with a slit line groove for adhering the slurry to the battery sheet to prepare the grid line of the battery sheet. The storage table is arranged below the screen for placing the battery sheet. The feeder is located above the screen for feeding the slit line groove. The roller is located above the screen for squeezing the slurry so that the slurry adheres to the battery sheet through the slit line groove. The present invention can increase the packing density of the solid content in the slurry, which is conducive to avoiding the slurry failing to completely enter the bottom of the battery velvet after printing, forming a void, and affecting the contact resistance. At the same time, the slurry is in close contact with each surface of the battery velvet, which helps to reduce the disconnection rate and contact resistivity, and improve the battery FF and photovoltaic cell conversion efficiency.

The invention relates to the technical field of solar cells, particularly provides an indium-free heterojunction solar cell, a preparation method thereof and a photovoltaic module, and aims to solve the problems that a TCO layer of an existing heterojunction cell is poor in conductivity and the conversion efficiency is reduced. To this end, the indium-free heterojunction solar cell of the present invention comprises: a substrate having a first surface and a second surface opposite to each other; the first passivation layer, the first indium-free transparent conductive oxide layer and the antireflection layer are sequentially arranged on the first surface; the second passivation layer, the P-type microcrystalline silicon thin film layer and the second indium-free transparent conductive oxide layer are sequentially arranged on the second surface; the upper grid line is arranged on the first indium-free transparent conductive oxide layer, and a first ion heavily doped region is arranged at the joint of the first indium-free transparent conductive oxide layer and the upper grid line; and the lower grid line is arranged on the second indium-free transparent conductive oxide layer, and a second ion heavily doped region is arranged at the joint of the lower grid line and the second indium-free transparent conductive oxide layer. According to the cell, through indium-free treatment, the cost is reduced, and the conversion efficiency of the cell is improved.

This invention discloses a TopCon battery and its fabrication method. The method includes: providing an N-type silicon substrate; the N-type silicon substrate includes a front side and a back side; fabricating a first tunneling oxide layer and a first doped layer on the back side; fabricating a second tunneling oxide layer and a second doped layer on the front side; removing the second tunneling oxide layer and the second doped layer from a predetermined texturing area on the front side to expose a portion of the N-type silicon substrate, and texturing the exposed portion of the N-type silicon substrate surface to form a textured structure; screen printing and high-temperature sintering the first doped layer on the back side and the second doped layer on the front side to form a first electrode in contact with the first doped layer on the back side, and a second electrode in contact with the second doped layer on the front side. Using the above method, the contact resistivity between the electrode and the front surface field layer is reduced, the fill factor of the battery is reduced, and thus the conversion efficiency of the battery is improved.

This invention relates to a back-contact solar cell with multiple tunnel junction structures and its fabrication method. The solar cell includes an N-type crystalline silicon substrate, whose front surface comprises a lightly doped n+ surface field and a passivation antireflection film, and whose back surface comprises a P-type emitter region, an N-type back surface field region, and a groove structure; the P-type emitter region is located within the groove structure, and the N-type back surface field region is located on top of the groove structure; the N-type back surface field region comprises, from the inside out, tunneled SiO2. X Layer, n+poly layer, oxide layer, n+poly layer, tunneling SiO X Layers, and p+poly layers; SiO X The layer forms c-Si / SiO with the n+poly layer. X The oxide layer and the n+poly layer form an n+poly / Oxide / n+poly tunnel junction, tunneling through SiO₂. X The layer forms an n+poly / SiO with the p+poly layer. X / p+poly tunnel junction; the P-type emitter region, from the inside out, consists of a tunneling SiOx layer and a p+poly layer, SiO... X The layer forms c-Si / SiO with the p+poly layer. X / p+poly tunnel junction; the P-type emitter region is provided with a P-type metal electrode, and the N-type back surface field region is provided with an N-type metal electrode.

The invention relates to a flexible constantan thin film thermoelectric device with high power density and a preparation method and application thereof, the flexible constantan thin film device is formed by connecting a plurality of n-type constantan thin film supporting legs in series through copper wires, and the n-type constantan thin film supporting legs are composed of Cu55Ni42Mn3. Compared with the prior art, the preparation of the flexible thermoelectric thin film device utilizes the constantan metal bond connection characteristic, the constantan thin film material with the micron-order thickness is obtained through the rolling technology, the texture orientation with the optimal elastic modulus and the high dislocation density are achieved, the flexible thermoelectric thin film device has the excellent flexibility and elasticity, the preparation technology is simple, and the preparation cost is low. The assembled 10-leg flexible thermoelectric thin film device is far superior to a currently reported flexible thermoelectric device in the aspects of power density and bending flexibility. The metal film thermoelectric device overcomes the inherent rigidity of an inorganic thermoelectric material, has the characteristic of high power factor of constantan, and shows that the metal material has potential in the aspect of application of the flexible thermoelectric device.

The invention discloses a spin-coating silicon oxide passivation contact solar cell and its preparation method and application. The passivation contact solar cell comprises a substrate, and a p + Emitter, first Al2O3 passivation layer, SiN x The anti-reflection layer and the Ag grid are provided with a second Al2O3 passivation layer, a SiO2 layer, a LiF layer and an Al electrode in sequence on the back of the substrate. The present invention prepares an effective electron selective contact solar cell through simple spin coating and low temperature ALD technology, thereby achieving high conversion efficiency, simple preparation, low preparation cost, low time cost, and can be widely used in the preparation of IBC solar cells and TOPCon solar cells.

The present invention discloses an aluminum powder material for N-type silver aluminum paste, wherein the median diameter D50 of the aluminum powder material is 1-3 μm, and the maximum particle D100 is less than 4.5 μm. The present invention can reduce the silver aluminum pinning pits formed while not affecting the formation of good ohmic contact of the silver aluminum paste on the front of the N-type battery during the metallization process, thereby reducing metallization recombination, increasing the open circuit voltage of the battery, and improving the photoelectric conversion efficiency.

The invention provides a SiC device ohmic contact preparation method and a SiC device, and the preparation method comprises the following steps: providing an n-type SiC substrate, and depositing a Ni film layer on the surface, forming ohmic contact, of the n-type SiC substrate; annealing the Ni film layer by using laser pulse to form a NiSi film layer; removing the NiSi film layer by adopting a wet etching process; and depositing a conductive metal layer. Compared with the prior art, the preparation method of the SiC device ohmic contact has the advantages that the Ni film layer is deposited firstly, then the laser pulse annealing process is performed, so that the density of carbon vacancies in the SiC substrate is greatly increased, and the downward bending amplitude of an energy band of the SiC of a contact interface is increased, so that the width of a conductive metal layer and a SiC barrier is greatly reduced; according to the method, the electron tunneling probability is greatly increased, the ohmic contact resistivity is reduced, meanwhile, the adhesion of the conductive metal layer on the back face is improved by removing the NiSi film layer, and the reliability of ohmic contact on the back face of the n-type SiC power device is improved.

The invention discloses a semiconductor composite material and a preparation method and application thereof. The semiconductor composite material comprises a semiconductor substrate, a functional layer and a first metal layer which are stacked in sequence, the functional layer comprises a doped layer; the doping layer comprises a compound AB and a doping element X doped in the compound AB; in the compound AB, A comprises Zn element, and B comprises at least one element of Se, Te or S; the doping element X comprises at least one of B, Al, Ga, In, Tl, Sc, Y, lanthanides or actinides. The functional layer prepared by the method has the characteristics of low work function and high electron concentration at the same time, can effectively induce selective collection of electrons, and can realize good contact between the semiconductor substrate and the first metal layer, so that the obtained semiconductor composite material has low contact resistivity; therefore, the energy loss generated when the current passes through the metal-semiconductor interface is effectively reduced, and the overall energy consumption of the device is reduced.

The invention relates to a preparation method for a back structure layer of a passivation contact cell and the passivation contact cell, and the method comprises the steps: firstly, selecting a monocrystalline silicon wafer, removing a BSG layer at the back and the edge, and sequentially growing a tunneling oxide layer and an intrinsic polycrystalline silicon layer at the back of the silicon wafer; secondly, forming a selective polycrystalline silicon layer based on the intrinsic polycrystalline silicon layer; and finally, forming a passivation anti-reflection film layer on the outer doping structure layer. On one hand, parasitic absorption of heavy doping on light is reduced by the polycrystalline silicon layer in the non-metal region, the light utilization rate is improved, and the photoelectric conversion efficiency is improved; the heavy doping is more favorable for forming better ohmic contact with a metal electrode, so that the contact resistivity is reduced; on the other hand, carbon or oxygen or nitrogen elements are doped, the activity of phosphorus atoms is reduced, Auger recombination and SRH recombination are reduced, meanwhile, H escape can be inhibited by forming C-H chemical bonds, and surface passivation can be promoted.

This application relates to the photovoltaic field, providing a solar cell, a photovoltaic module, and a method for fabricating a solar cell. The solar cell includes: a substrate having a front side and a back side, the back side including a textured region and a flat region adjacent to the textured region, the textured region having a doped surface field, and the doped surface field containing a doped element, which is N-type or P-type; a tunneling dielectric layer located on the flat region of the back side of the substrate; a doped conductive layer located on the surface of the tunneling dielectric layer away from the back side of the substrate, the doped conductive layer containing a doped element, the type of which is the same as the type of which is doped in the doped surface field; and a back electrode, a portion of the bottom surface of the back electrode located within the doped conductive layer and in contact with the doped surface field, which can at least reduce the contact resistance of the solar cell.

The invention specifically discloses a preparation process of a TOPCon solar cell. The preparation process comprises the following steps of cleaning a silicon wafer and performing texturing; boron diffusion is carried out on the back surface and the front surface of the textured silicon wafer; removing the BSG layers on the front surface and the back surface of the silicon wafer, performing alkali polishing treatment on the back surface of the silicon wafer, and sequentially depositing a tunneling layer and an amorphous silicon passivation layer on the back surface of the silicon wafer; performing tubular phosphorus diffusion on the amorphous silicon on the back surface of the silicon wafer; removing the PSG layers on the front surface and the back surface of the silicon wafer, and depositing an aluminum oxide passivation layer on the front surface of the silicon wafer; depositing antireflection layers on the front surface and the back surface of the silicon wafer respectively; screen-printing metal electrodes and patterns on the front surface and the back surface of the silicon wafer; carrying out sintering and light injection on the silicon wafer; carrying out laser-induced sintering treatment on the silicon wafer; and testing and sorting. According to the invention, the laser-induced sintering treatment is carried out on the silicon wafer after light injection, so that an SE doping process is omitted, the process flow is simplified, the production cost is saved, the damage to the silicon substrate is reduced, and the conversion efficiency of the solar cell is improved.

The invention discloses a TOPCon solar cell with a selective passivation contact structure and a preparation method of the TOPCon solar cell, and belongs to the technical field of crystalline silicon solar cells. The TOPCon solar cell with the selective passivation contact structure comprises an n-type crystalline silicon substrate, a p + emitter layer, a silicon nitride antireflection layer, a plurality of slots, a plurality of metal electrode structures, a second tunneling oxide layer, an n + polycrystalline silicon layer, a silicon nitride passivation layer and a plurality of Ag electrodes. The low contact resistivity of the metal contact area is ensured, parasitic light absorption loss of the non-metal contact area is avoided, the short-circuit current density and the filling factor of the cell can be improved, the selective passivation contact structure is also arranged on the back surface, the low contact resistivity of the metal contact area can be maintained, and the service life of the cell is prolonged. The parasitic light absorption loss of the non-metal contact area is reduced, the short-circuit current density of the cell can be improved, and the open-circuit voltage of the cell is kept unchanged.

The passivation contact cell comprises a monocrystalline silicon wafer and a back surface structure layer, the back surface structure layer comprises a selective polycrystalline silicon layer formed based on an intrinsic polycrystalline silicon layer, and the selective polycrystalline silicon layer comprises a first doped polycrystalline silicon layer, a second doped polycrystalline silicon layer and a third doped polycrystalline silicon layer which form an inner doped structure layer and an outer doped structure layer with different concentrations of phosphorus atoms. On one hand, parasitic absorption of heavy doping on light is reduced by the polycrystalline silicon layer in the non-metal region, the light utilization rate is improved, and the photoelectric conversion efficiency is improved; the heavy doping is more favorable for forming better ohmic contact with a metal electrode, so that the contact resistivity is reduced; on the other hand, carbon or oxygen or nitrogen elements are doped, the activity of phosphorus atoms is reduced, Auger recombination and SRH recombination are reduced, meanwhile, H escape can be inhibited by forming C-H chemical bonds, and surface passivation can be promoted.

The application provides a preparation method of a solar cell and the solar cell. The preparation method of the solar cell comprises the following steps: providing a solar cell intermediate; forming a first paste layer on the solar cell intermediate by using a patterned inkjet printing process, wherein the thickness of the first paste layer is 0.5-2 μm; forming a second paste layer on the first paste layer by using a screen printing process; and simultaneously sintering the first paste layer and the second paste layer to form a fine grid with a composite structure. The preparation method of the solar cell and the solar cell can reduce the amount of silver paste and the contact resistivity.

The application provides a crystalline silicon solar cell, a preparation method and application thereof. The crystalline silicon solar cell comprises a substrate, a thin film layer and an electrode which are sequentially arranged. The thin film layer comprises a first thin film area and a second thin film area. The thickness of the first thin film area is greater than that of the second thin film area. The electrode is arranged on the second thin film area and forms a contact with the substrate. By reducing the thickness of the second thin film area which is in contact with the electrode, the contact resistance between the electrode and the substrate is improved, the recombination in the electrode area is reduced, the average open circuit voltage is increased, and the optical performance and the improvement window of the passivation performance of the first thin film area which is not in contact with the electrode are increased. The crystalline silicon solar cell solves the problem that the electrode ablation capacity is incompatible with the thin film composition and thickness, effectively improves the cell efficiency, and the preparation method is compatible with the screen printing high-temperature sintering process, and large-scale mass production at low cost can be realized.

The invention discloses a method for reducing the ohmic contact resistance of a device, a device packaging structure and a packaging method.The method for reducing the ohmic contact resistance of the device comprises the steps that a laser light source is adopted to continuously irradiate a semiconductor device, and the energy of the laser light source is larger than the forbidden band width of a semiconductor material in the semiconductor device. According to the method for reducing the ohmic contact resistance of the device, the device packaging structure and the packaging method, the semiconductor device can be irradiated by laser, so that photon-generated carriers are generated in the semiconductor device, the contact resistivity is reduced, and the ohmic contact performance of the device is improved.

The invention belongs to the technical field of photovoltaic cell equipment, and relates to metallization paste, and an electrode and a photovoltaic cell manufactured by using the metallization paste. 2.0 wt% or less of a vanadium-containing glass system; wherein the specific surface area of the silver powder is 0.7 m < 2 > / g to 2.0 m < 2 > / g, and the average particle size is 0.1 m to 10 m; the weight% is based on the weight of the metallization paste. The present invention provides a screen printable thick film metallization paste for making an electrode electrically interconnected with a transparent conductor for use in a photovoltaic cell. The metallization paste comprises silver powder, and a vanadium-containing glass system that can be cured at a temperature of 350 DEG C to 500 DEG C. The metallization paste can be used to make electrodes for transparent conductors of passivated contact solar cell devices, such as TOPCon-type solar cells.

This invention discloses a solar cell and its fabrication method, components, and system. The solar cell includes a silicon substrate, a doped layer and a passivation layer sequentially stacked on the back side of the silicon substrate. The passivation layer has electrode trenches that locally expose the doped layer, and the electrode trenches are provided with a back electrode. The back electrode includes a seed metal silicide layer, a seed metal oxide thin layer, a mixed conductive layer, and an outer metal layer sequentially stacked on the back side of the locally exposed doped layer. The seed metal silicide layer is one or more layers selected from molybdenum silicide, nickel silicide, and titanium silicide layers; the seed metal oxide thin layer is one or more layers selected from molybdenum oxide, nickel oxide, and titanium oxide thin layers; and the thickness of the seed metal oxide thin layer is no greater than 20 nm. This solar cell has a novel electrode structure, which can promote improvements in electrode structure and performance, and reduce costs. The novel electrode structure of this solar cell exhibits good current transport performance and low metal recombination loss.

This invention provides a P-type passivated contact structure and its preparation method. The P-type passivated contact structure includes a silicon substrate, a first silicon oxide layer, a first polycrystalline silicon layer, a second polycrystalline silicon layer, and a hydrogen-containing dielectric layer. The silicon substrate has a diffusion region near the surface of the first silicon oxide layer. The surface of the first silicon oxide layer near the first polycrystalline silicon layer has a native pinhole defect structure generated by plasma bombardment. The first polycrystalline silicon layer is made of carbon-doped boron-containing polycrystalline silicon, wherein the boron and carbon doping concentrations gradually increase away from the first silicon oxide layer, and the thickness is greater than or equal to 8 nm. The second polycrystalline silicon layer is also made of carbon-doped boron-containing polycrystalline silicon, with a thickness greater than 10 nm. The interfacial silicon oxide surface of this invention has a high density of pinhole defects, and using carbon-doped boron-containing amorphous silicon as the source layer can reduce oxide layer defects caused by interfacial boron enrichment, achieving excellent surface passivation and selective carrier collection, and reducing surface recombination current density.