Film transistor substrate and display device thereof

Abstract

The invention provides a film transistor substrate which has a low contact resistivity and good space continuity even a Cu series alloy wiring film directly contacts with a semiconductor. The film transistor substrate comprises a semiconductor layer and a Cu alloy layer. An oxygen-containing layer is disposed between the semiconductor layer and the Cu alloy layer. A part of or the whole oxygen of the oxygen-containing layer combines with the Si of the semiconductor layer of the film transistor. The Cu alloy layer as an alloy element has X arranged from 2 atom% to 20 atom% (X is at least one of Mn, Ni, Zn and Mg). . The Cu alloy layer is connected to the semiconductor layer of the film transistor through the oxygen-containing layer.

Description

technical field [0001] The present invention relates to thin-film transistor substrates and display devices used in liquid crystal displays, semiconductors, optical parts, etc., and particularly relates to a new thin-film transistor substrate that can directly connect Cu alloy layers constituting source-drain electrodes and the like to semiconductor layers of thin-film transistors. Background technique [0002] An active matrix liquid crystal display device such as a liquid crystal display is composed of a thin film transistor (ThinFilm Transistor, hereinafter referred to as TFT) as a switching element, and has a transparent pixel electrode, a gate wiring, and a wiring part such as a source-drain wiring. TFT substrates with semiconductor layers such as amorphous silicon (a-Si) and polycrystalline silicon (p-Si); counter substrates with common electrodes arranged opposite to the TFT substrate at predetermined intervals; filling the TFT substrate and the counter substrate liqu...

AI Technical Summary

Problems solved by technology

[0005] First, when the Cu-based alloy wiring film is brought into direct contact with the semiconductor layer of the TFT without interfering with the barrier metal layer, the subsequent process (for example, the film formation process of the insulating film formed on the TFT or the heat of sintering or annealing) process), Cu in the Cu-based alloy wiring film diffuses in the semiconductor layer, TFT characteristics decrease, or the contact resistance between the Cu-based alloy wiring film and the semiconductor layer increases

[0006] Second, as described above, when Cu in the Cu-based alloy wiring film diffuses in the semiconductor to form a reaction layer between the semiconductor layer and Cu, there is a problem that the Cu-based alloy wiring film is partially peeled off from the reaction layer.

Specifically, it is necessary to use a film forming apparatus (a representative cluster tool in which a plurality of film forming chambers are connected to a transfer chamber) equipped with a film forming chamber for hindering the formation of the metal layer must be used, resulting in a decrease in manufacturing cost. up and down in productivity

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