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Thin film transistor, manufacturing method therefor, and display apparatus having thin film transistor, sputtering target material

On condition that Cu alloy is used in wiring of a thin film transistor (TFT), TFT movability reduction occurs when oxidation treatment is performed on a semiconductor layer which is composed of silicon film. Additionally, when Cu alloy contacts with a semiconductor layer which is composed of oxide semiconductor film for heating, subthreshold coefficient increase, negative offset of threshold voltage and normal conduction operation of TFT occur. The present invention provides a thin film transistor which is provided with the following components on a substrate: a grid insulating film, a Si-series semiconductor layer, source/drain electrodes with a Cu alloy layer, and an oxide film which is formed on an interface between the source/drain electrodes and the Si-series semiconductor layer. The thin film transistor is characterized in that: the Cu alloy layer comprises Cu and at least one added element; the depth distribution peak of the oxygen atom concentration in the oxide film is between 40atom% and 60atom%; and furthermore, when the distance of 10atom% to the oxygen atom concentration peak or the oxygen distribution of the interface between the source/drain electrodes and the Si-series semiconductor layer is defined to film thickness of the oxide film, the film thickness of the oxide film is less than 1.8nm.
Owner:SH COPPER PROD
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