38results about How to "Electrical resistance increase" patented technology

A current perpendicular to plane (CPP) sensor having FeN in their free and pinned layers. A tunnel junction sensor (TMR) according to the present invention can have a MgO barrier layer, and a CPP GMR sensor according to the present invention can have a Cr spacer layer.

Polymer materials make useful materials as electrode array bodies for neural stimulation. They are particularly useful for retinal stimulation to create artificial vision. Regardless of which polymer is used, the basic construction method is the same. A layer of polymer is laid down. A layer of metal is applied to the polymer and patterned to create electrodes and leads for those electrodes. A second layer of polymer is applied over the metal layer and patterned to leave openings for the electrodes, or openings are created later by means such as laser ablation. Hence the array and its supply cable are formed of a single body. A method for manufacturing a flexible circuit electrode array, comprises:a) depositing a metal trace layer on an insulator polymer base layer;b) applying a layer of photoresist on said metal trace layer and patterning said metal trace layer and forming metal traces on said insulator polymer base layer; andc) activating said insulator polymer base layer and depositing a top insulator polymer layer and forming one single insulating polymer layer with said base insulator polymer layer; wherein the insulator polymer layers were treated at a temperature from 80-150° C. and then at a temperature from 230-350° C.

A method for manufacturing a flexible circuit electrode array, comprising:a) depositing a metal trace layer containing a base coating layer, a conducting layer and a top coating layer on said insulator polymer base layer;b) applying a layer of photoresist on said metal trace layer and patterning said metal trace layer and forming metal traces on said insulator polymer base layer;c) activating said insulator polymer base layer and depositing a top insulator polymer layer and forming one single insulating polymer layer with said base insulator polymer layer;d) applying a thin metal layer and a layer of photoresist on the surface of said insulator polymer layer and selective etching said insulator layer and said top coating layer to obtain at least one via; ande) filling said via with electrode material.A layer of polymer is laid down. A layer of metal is applied to the polymer and patterned to create electrodes and leads for those electrodes. A second layer of polymer is applied over the metal layer and patterned to leave openings for the electrodes, or openings are created later by means such as laser ablation. Hence the array and its supply cable are formed of a single body. Alternatively, multiple alternating layers of metal and polymer may be applied to obtain more metal traces within a given width.The method provides an excellent adhesion between the polymer base layer and the polymer top layer and insulation of the trace metals and electrodes.

A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y / X is within the range of 1 / 10 to 1 / 10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

The electrode collector 40 for a battery provided by the present invention is an electrode collector 40 having a base 10 that mainly composed of a conductive metal such as aluminum, and a DLC film 20 covering the surface 12 of the base 10. The DLC film 20 is not thicker than 10 nm, and preferably has a hydrophilic surface on which hydrophilic functional groups are present.

A memory device comprising a conglomerate material interposed between a first electrode and a second electrode is provided. The conglomerate material includes nanocrystalline grains embedded in an amorphous matrix. During operations, phase change reactions occur at the inter-grain boundaries in the conglomerate material so as to reduce the operation power.