The invention relates to the technical field of cavity
surface coating of
semiconductor laser chips, in particular to a cavity
surface coating structure and method of an InP-based
semiconductor laser chip, and the method comprises the following steps: S001, cleaving the
semiconductor laser chip into bars, fixing the bars by using a special clamp, and transferring the bars into
electron cyclotron resonance coating equipment for vacuumizing; s002, starting an automatic cleaning
coating program, and when
vacuum pumping reaches a required value, automatically performing
plasma pre-cleaning treatment on the cavity surface of the
chip by an
electron cyclotron resonance ion source; s003, after the first protective film Si layer is plated, the laser chip clamp is transferred to an
electron beam
evaporation coating equipment platform to continue vacuumizing; according to the semiconductor laser chip cavity
surface coating method provided by the invention, the semiconductor laser is cleaned by using the electron
cyclotron technology, the high antireflection film and the
high reflectivity film are evaporated by using the electron beam
evaporation coating equipment, high-temperature heating is not needed in the whole coating process, and laser chip
electrode degradation caused by high temperature can be effectively avoided; and the efficiency is reduced.