Semiconductor light emitting element
A technology for light-emitting elements and semiconductors, applied in semiconductor devices, electrical components, electro-solid devices, etc., can solve problems such as difficulties, and achieve the effects of improving light reflection, reducing element resistance, and excellent current diffusivity
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Embodiment approach 1
[0100]A specific example of LED100 of Embodiment 1 and its structure are demonstrated using FIG. 1. FIG. Here, FIG. 1A is a schematic diagram illustrating a plan view of the LED according to Embodiment 1 viewed from the electrode forming surface side, and FIGS. 1B and 1C are schematic diagrams illustrating cross sections along lines A-A and B-B in FIG. 1A . , FIG. 1D, FIG. 1E is a schematic diagram of FIG. 1C partially enlarged, and FIG. 1E is a schematic diagram illustrating another form of FIG. 1D.
[0101] The structure of the light-emitting element shown in FIG. 1 has a semiconductor structure 20 consisting of an n-type nitride semiconductor layer 21 in which a first conductivity type layer is laminated on a substrate 10 through a base layer (not shown) such as a buffer layer, The active layer 22 serving as the light emitting part and the p-type nitride semiconductor layer 23 of the second conductivity type layer are composed of a stacked structure, and have an element str...
Embodiment 1A
[0144] [Example 1A(1a)]2 2 2 2 <[embodiment 1C (1c)],
[0145] λ / 2n in Example 1B(1b) 2 Near, more specifically, at λ / 2n 2 ±λ / 4n 2 (λ / 4n 2 Above, 3λ / 4n 2 In the range below), better light output can be obtained. On the other hand, according to the comparison of Example 1A (1a) and Example 1C (1c), it can be seen that the thicker the insulating film, the higher the Vf tends to be. Vf becomes higher due to the first layer of the insulating film.
[0146] Next, in the above-mentioned Example 1 (research example, the structure of FIG. 1 ), the following research example, the following embodiment 2 of the second embodiment (the structure of FIG. 4 ), the embodiment 7 of the embodiment 5 (the structure of FIG. 3 structure) and the structures shown in the comparative examples of these examples, the film thickness of the first layer of ITO was changed between 20nm and 170nm to produce light-emitting elements respectively, and output characteristics as shown in FIG. 13 were obtai...
Embodiment approach 2
[0149] As Embodiment 2, in Example 1 of Embodiment 1, the shape of the extension 44 of the second electrode (p-electrode) is set to the shape shown in FIG. 4 , and the number of extensions is changed from four (Example 1 ) is set to 9 pieces, and a light-transmitting insulating film corresponding to the shape of the extension (second layer) and the electrode is provided. In addition, a substantially square (320 μm ×320μm) light-emitting element.
[0150] In this light-emitting element, compared with Example 2, the number and area of electrode extensions are larger, so phenomena such as current diffusion are improved. decreased, and the output of the element tended to be slightly lower than in Example 2.
[0151] Concretely, for comparison, in the same manner as the study examples of Example 1 (Examples 1A to 1C, 1a to 1c), under the condition that the second layer of the second electrode and the light-transmitting insulating film are approximately the same area , and the s...
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