64results about How to "Good for arraying" patented technology

The invention discloses a dielectric-varied capacitive flexible three-dimensional force tactile sensor. The dielectric-varied capacitive flexible three-dimensional force tactile sensor is characterized in that a flexible printed circuit board is arranged, wherein a square common electrode and four identical rectangular induction electrodes which are located on the periphery of the edges of the common electrode in an equidistant mode are printed on the printed circuit board; the induction electrodes are in two-to-two symmetry with the center of the common electrode serving as the symmetry point; a composite multi-dielectric layer is fixed to the flexible printed circuit board; the composite multi-dielectric layer is formed by an inversely-concave PDMS dielectric layer and an air dielectric layer located in a groove of the PDMS dielectric layer; the composite multi-dielectric layer is buckled on the upper portion of the flexible printed circuit board, and the common electrode and the four induction electrodes are located in the air dielectric layer; a PDMS hemispheric contactor is arranged on the composite multi-dielectric layer. According to the dielectric-varied capacitive flexible three-dimensional force tactile sensor, the common electrode and the induction electrodes are located on the same plane; compared with a traditional capacitive tactile sensor of an up-down electrode structure, the dielectric-varied capacitive flexible three-dimensional force tactile sensor has the advantages of being simple in manufacturing process and capable of being easily arrayed.

The invention relates to a capacitive flexible pressure sensor and a preparation method thereof. The capacitive flexible pressure sensor comprises a polymer elastomer electrode, an insulating layer film and an ITO electrode; the polymer elastomer electrode comprises a conductive film, a polymer elastomer and an electrode substrate, wherein the polymer elastomer comprises a microstructure layer which is formed on the electrode substrate and has a microstructure bump array, and the conductive film covers the surface of the microstructure layer; the insulating layer film is arranged between the polymer elastomer electrode and the ITO electrode, and contacts the tops of the microstructure bumps of the microstructure layer through the conductive film. The capacitive flexible pressure sensor andthe preparation method thereof of the invention have the advantages of high sensitivity and good device stability.

The invention discloses a disc type solar heat collecting system which comprises a solar collecting device, a heat absorption device, an automatic tracking device, a reflecting mirror and a system bracket, wherein the solar collecting device, the heat absorption device and the reflecting mirror are installed on the system bracket. The system provided by the invention is characterized in that the point of intersection of the rotation center of the disc type solar heat collecting system and the primary optical axis of a disc type collecting mirror is provided with an optical path regulator; the optical path regulator comprises a plane reflecting mirror; the azimuth angle of the plane reflecting mirror is in accordance with that of the disc type collecting mirror; the automatic tracking device is provided with an optical path regulator automatic tracking device; a spiral heat absorption pipe is adopted for the heat absorption device; the surface of the spiral heat absorption pipe is coated with a heat-resisting solar selective absorption coating; and the heat absorption device is installed on a bracket base of the system bracket. The disc type solar heat collecting system provided by the invention has the advantages of simple structure and high energy absorption efficiency; and the defect that the focal point of the traditional disc type spotlight changes along with the movement of the sun is overcome.

The invention relates to a micro electro mechanical system (MEMS) gyroscope, a chip level temperature control method thereof and a processing method thereof. A microheater and a temperature sensor are processed on a glass substrate by a micromachining technique; the glass substrate is bonded with an MEMS gyroscope structure chip; the MEMS gyroscope chip is heated by applying voltage at the two ends of the microheater; and the integrated temperature sensor monitors the temperature of the MEMS gyroscope chip in real time so as to drive a peripheral circuit to adjust the voltage at the two ends of the heater and keep the temperature of the gyroscope chip constant and a little higher than the upper limit of the temperature of the working environment. The heater and the temperature sensor are integrated on the glass substrate, the volume is small and the temperature sensitivity is high. The chip level temperature control method has the characteristics of low power consumption, small volume, high applicability and high repeatability, can be compatible with the micromachining process, can realize batch production, and can be widely applied to chip level temperature control of other MEMS chips.

The invention relates to a waveguide magnetic field/current sensor based on surface plasmons. The provided sensor is used for detection of a magnetic field intensity or a current intensity. The magnetic field/current sensor comprises a magnetic field generator and also comprises a first metal waveguide, a dielectric medium channel and a second metal waveguide which are arranged in the magnetic field generator from top to bottom in order. A resonant cavity is formed in the first metal waveguide and/or the second metal waveguide. The resonant cavity is communicated with the dielectric medium channel through a metal seam formed in the corresponding metal waveguide. The resonant cavity is filled with magnetic sensitive substances. The magnetic field/current sensor has the following beneficial effects: a measuring space is shrank to an order of magnitude of an optical waveguide width dimension, and the magnetic field/current sensor can be made to be very small, and facilitates integration and arraying via technicians; because the magnetic field/current sensor can be prevented from influence of external conditions of light source fluctuation or the like, the magnetic field/current sensor has high detection sensitivity.

In a boiler furnace having nozzles for introducing combustion media such as air and coal, nozzle tip walls that have the greatest exposure to radiant heat and hot gases are provided with arrays of air holes that allow air to flow to the exposed sides of the walls from the opposite sides in order to reduce the temperature difference between the two sides and thereby reduce thermal distortion and damage resulting from oxidation.

The invention relates to a three-dimensional micro-heater comprising a circular arc-shaped heating film region with adjustable radian and a method, and the three-dimensional micro-heater is characterized in that the heating film region with the adjustable radian is connected with a substrate framework through a support over beam, the cross section of the heating film region is like a circular arc-shaped groove, the radian of the circular arc-shaped groove can be regulated through the etching method, heating resistance wires are arranged in the groove of the heating film region in the form of fold lines or curved lines and connected with an electrode on the substrate framework through a leading wire on the support over beam, and a thermal insulation cavity is arranged below the heating film region and the support over beam. The heating resistance wires of the heater are arranged in the circular arc-shaped groove of the central heating film region with a three-dimensional structure, thereby leading the heat loss caused by convection heat exchange to be small and effectively reducing the power consumption of the heater. The three-dimensional micro-heater can reduce the heat stress of the circular arc-shaped heating film region, improve the mechanical strength at high temperature, and regulate the radian of the heating film region to meet different applications.

The invention provides an optical fiber sensing device measuring a vibration waveform and a vibration position simultaneously and a sensing method of the optical fiber sensing device. The optical fiber sensing device measuring vibration waveform and vibration position simultaneously and the sensing method of the optical fiber sensing device aim to achieve detection of the vibration waveform and measurement of the position of a vibration point through double cascade type Mach-Zehnder interferometers. According to a sensing portion, the double cascade type Mach-Zehnder interferometers are set up, and the vibration waveform is sensed; according to an analysis portion, a base frequency mixed type arc tangent-differential self-multiplication algorithm is adopted to correctly demodulate the waveform of a vibration signal, and the vibration position is worked out through offset of the waveform. The optical fiber sensing device has the advantages that the vibration waveform and the vibration position of the vibration waveform can be accurately measured; according to an optical path portion, a sensing optical fiber is additional arranged between the double Mach-Zehnder interferometers, modulation and sensing are separated, and therefore the optical fiber sensing device is easily suitable for sensing in various complicated environments; according to a demodulation algorithm portion, based on the base frequency mixing technology, the sampling frequency is reduced, arraying of optical fiber sensing is facilitated according to the arc tangent-differential self-multiplication algorithm, and therefore a demodulation effect is better.

The invention discloses a quantum dot fiber gas sensor and a preparation method thereof. The quantum dot fiber gas sensor comprises a fiber probe and a gas-sensitive layer comprising colloidal quantum dots, a refractive index sensitive area of the fiber probe is uniformly coated with the gas-sensitive layer, carrier concentration changes when the gas-sensitive layer of the fiber probe adsorbs gas, so that gas-sensitive layer refractive index change, optical fields in the fiber probe change, extinction ratio of spectrums change, the spectrums drift, gas concentration is obtained according to variation of the extinction ratio and the spectrums, the quantum dot fiber gas sensor has the advantages that the sensor is high gas-sensitive responsibility, distributed networking is easily achieved. According to the preparation method, the gas-sensitive layer is uniform and excellent in adhesive force and obtained by the aid of a layer-by-layer electrostatic self-assembly method, the thickness of the gas-sensitive layer can be adjusted, doping or surface decoration is achieved by the aid of short-chain ligand solution, adjusting and controlling are achieved according to characteristics of different target gases, and sensitivity and selectivity of the target gases are further improved.

The invention provides a flexible pressure sensor and a making method thereof. The flexible pressure sensor comprises a porous material layer, a pair of electrode layers arranged at the two sides of the porous material layer, and polymer substrates arranged at the outer sides of the electrode layers respectively. The porous material layer comprises a polymer material having a porous structure, a conducting polymer adsorbed to the pore wall of the porous structure and having piezoresistive properties, and a filling material filled in pores of the porous structure and used for expanding range ofthe pressure sensor. The flexible pressure sensor can obtain a larger range under the condition of maintaining high sensitivity, and the device is high in stability. The making method can adjust therange of the sensor according to applications.

A silicon-base grated gate terahertz detector consists of a MOS transistor. The MOS transistor comprises a substrate layer. One end of the upper end surface of the substrate layer is provided with a source, and the other end of the upper end surface of the substrate layer is provided with a drain. A channel layer and an insulating layer are successively disposed from bottom to top on the upper endsurface of the substrate layer and between the source and the drain. The source and the drain are connected to the channel layer and the insulating layer. A gate of a grating structure is disposed onthe upper end surface of the insulating layer. The invention relates to the silicon-base grated gate terahertz detector. The grating structure is configured to couple a terahertz signal in space, anda gap of the grating structure is configured to diffract the terahertz signal, thereby increasing the local terahertz field strength. The gate of the NMOS/PMOS is prepared into the grating structureso as to effectively couple the terahertz signal in space to a transistor channel, and excite the plasma oscillation in the channel, thereby changing the current between the source and the drain, andrealizing the terahertz signal detection.

The invention discloses a liquid chemistry growing method of a height-oriented ZnO nanocone array. According to the liquid chemistry growing method of the height-oriented ZnO nanocone array, ZnO colloidal sol coats a substrate through a spin coating film method, and a uniform nanoscale ZnO crystal seed layer is prepared through heat treatment; ZnO array growth liquid is prepared with KOH and Zn (NO3)2; a growing face (the face containing the crystal seed layer) of the substrate is suspended and immersed in the growth liquid in an inverse buckling mode, the reaction lasts for 1-12 hours under the condition of water bath at 20-50 DEG C, and the ZnO nanocone array is prepared on the substrate. The liquid chemistry growing method of the height-oriented ZnO nanocone array has the advantages of being simple in equipment and process, easy to operate, low in cost, suitable for industrial production and the like. The prepared ZnO nanocone array has the advantages of being highly compact, uniform in thickness, good in orientation, high in flatness, stable in performance, capable of being firmly combined with the substrate and the like, and has wide application prospects and great market benefits on the aspects of super-hydrophobic surfaces, detectors, piezoelectric frequency converters, ultraviolet laser, solar cells and the like.

A miniature sensor for human respiration is composed of a substrate, and microelectrodes or their array on said substrate. The positive and negative electrodes of said microelectrodes or their array are isolated from each other by air. Its advantages are high sensitivity and S/N ratio, and low energy consumption.

A fast quantitative evaluation method upon interaction of drug nucleic acids is characterized in that the interaction of drug nucleic acids with dedicated array micro-fluidic chip is quantitatively evaluated. Compared with the prior art, the invention has the advantages of direct, fast and simple operation, low sample consumption, and wide application in high flux screening of nucleic acid target drugs.

The invention belongs to the technical field of sensors and provides a piezoelectric film sensor with an elliptical flexible substrate. The piezoelectric film sensor comprises a piezoelectric film, aflexible substrate and an insulating protective layer. The flexible substrate of the piezoelectric film sensor is semi-elliptic cylindrical curved structure. The piezoelectric film covers the flexiblesubstrate and is fixed through the insulating protective layer. According to the flexible substrate structure, sensors are divided into an equal-arc-length ellipse elliptic flexible substrate sensorand an equal-chord-length elliptical flexible substrate sensor. According to the piezoelectric film sensor, through simulating and calculating output voltage of piezoelectric film sensors with semi-elliptical flexible substrates of different size parameters under the same action force, and an optimal flexible substrate size is determined, which means that the output voltage is taken as a basis ofdetermining the sensor flexible substrate size. The piezoelectric film sensor has higher sensitivity, and the miniaturization and arraying of sensors are facilitated.

The invention relates to a solenoid type heating resistor-containing three-dimensional microheater and a manufacturing method thereof. The solenoid type heating resistor-containing three-dimensional microheater is characterized in that: a groove-shaped heating area supporting film is connected with a substrate frame through a supporting suspension girder; the cross section of the groove-shaped heating area supporting film has a V-shaped or reverse trapezoidal structure; an upper heating resistance wire is connected with a lower heating resistance wire to form a solenoid type heating resistor embedded in the heating area supporting film and the solenoid type heating resistor is connected with an electrode on the substrate frame through a lead on the supporting suspension girder; and the heating area supporting film and the solenoid type heating resistor embedded in the heating area supporting film are supported by the supporting suspension girder to be suspended on a silicon substrate. The heating resistor of the three-dimensional microheater provided by the invention has a solenoid type structure and is embedded in the heating area supporting film, so annularly heating can be realized and the heating efficiency is high. The three-dimensional microheater is particularly suitable for the fields of infrared light sources and sensing.

The invention discloses a Mach-Zehnder modulation type resonant cavity sensor based on the vernier effect. The Mach-Zehnder modulation type resonant cavity sensor comprises a silicon substrate, a silicon dioxide layer and a single crystal silicon layer which are arranged form the bottom up sequentially to form an SOI base body; the single crystal silicon layer of the SOI base body comprises a U-shaped waveguide and a circular resonant cavity which are arranged on the same plane. The Mach-Zehnder modulation type resonant cavity sensor provided by the invention has the advantages that remodulation of the circular resonant cavity can be realized through a sensing structure cascaded with double Mach-Zehnder interferometers and the circular resonant cavity, and the frequency spectrum of the Mach-Zehnder interferometers and that of the circular resonant cavity are overlapped effectively, so that the alignment accuracy can be improved on the basis of the vernier effect, the sensitivity of a device is improved effectively, and detection in a large dynamic range can be realized. Moreover, due to the structured integration, not only can the integral size of the device be reduced, but also the device can be miniaturized and arrayed more conveniently, and the quasi-free spectral region of the device can be expanded remarkably.

The invention discloses a silicon-based rasterized grid terahertz detector based on a frequency selective surface. The silicon-based rasterized grid terahertz detector comprises the frequency selective surface and a rasterized grid MOS transistor; the frequency selective surface is a spatial filter with an array structure formed by two-dimensional periodic units; each periodic unit represents a frequency selective surface unit with different effects; the grid electrode of the MOS tube of the rasterized grid electrode is of a grating structure, and the metal source electrode is connected with the active region through the through hole; and after the rasterized grid is coupled with space terahertz radiation, a space terahertz signal is converted into an alternating current signal and transmitted into a channel of the MOS transistor, and the transistor detects the alternating current signal in the channel, so that a direct current signal is generated at the drain, and terahertz signal detection is realized. According to the invention, the frequency selective surface can be well combined with the rasterized grid detector, and has higher gain response to terahertz waves of a specific frequency band.

The invention relating to the field of sensors discloses a three-dimensional MEMS oceanic turbulence sensor comprising a sensing unit including a substrate structure. Four micro-cantilever beams arranged in a cross shape are arranged on the substrate structure; the end, facing the center of the cross shape, of each micro-cantilever beam is in a curled shape; and the substrate structure and the micro-cantilever beams are coated with elastic coating bodies. Each micro-cantilever beam comprises a Si film layer, a SiN film layer and a Cr film layer which are arranged from bottom to top; a piezoresistor is arranged on the micro-cantilever beam; and each piezoresistor and three constant resistors form a Wheatstone bridge. The lower end faces of the micro-cantilever beams are connected to the substrate structure through SiO2 layers, the substrate structure is in a cuboid shape, one end of each micro-cantilever beam is arranged on one outer side edge of the substrate structure, and the other end of each micro-cantilever beam extends to the center of the substrate structure and curls upwards.

The invention discloses an MEMS micro heater with an integrated temperature sensor. The MEMS micro heater comprises a silicon substrate, an insulating and heat insulating layer, an insulating layer Band an insulating layer A, wherein the insulating and heat insulating layer, the insulating layer B and the insulating layer A are sequentially arranged on the silicon substrate and prepared through various MEMS processing processes; The insulating layer A is provided with a heating layer accommodating groove corresponding to the insulating layer B end plane, the insulating layer B is provided with a temperature sensor accommodating groove opposite to the insulating layer A end plane, and the heating layer accommodating groove and the temperature sensor accommodating groove are internally provided with a heating layer and a temperature sensor respectively; The insulating layer A and the heating layer form a heating structure, and the temperature sensor and the insulating layer B form a temperature detection structure.

The invention discloses a two-dimensional flexible shear stress sensor and a measuring method thereof, and belongs to the technical field of electronic devices. The two-dimensional flexible shear stress sensor comprises an X hot line and a Y hot line which are made of a heat-sensitive material Ni. The X hot line is composed of a first X sub hot line and a second X sub hot line. The Y hot line is composed of a first Y sub hot line and a second Y sub hot line. The two ends of the first X sub hot line, the second X sub hot line, the first Y sub hot line and the second Y sub hot line are respectively coupled to drive electrodes made of copper. External electrodes made of copper are arranged on an underlying substrate. Each drive electrode is connected with the corresponding external electrode through a copper wire. A surface substrate fully covers the X hot line, the Y hot line and the drive electrodes, and the surface substrate does not cover the external electrodes. According to the invention, the fluid change resolution in the boundary layer of a flow field is improved, the two-dimensional shear stress in the boundary layer of fluid under the condition of high Reynolds number can be measured accurately, and sensor arraying is facilitated.