Silicon-base grated gate terahertz detector

A terahertz detector and grating technology, applied in the field of terahertz detectors, can solve the problems of large loss, low gain efficiency and low coupling efficiency of on-chip antennas, so as to increase the terahertz field strength, improve the coupling efficiency, and reduce the design The effect of complexity

Inactive Publication Date: 2019-02-22
TIANJIN UNIV
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Problems solved by technology

Due to the limitations of the CMOS process, the on-chip antenna has problems such as large loss and low gain efficie

Method used

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  • Silicon-base grated gate terahertz detector
  • Silicon-base grated gate terahertz detector

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Embodiment Construction

[0023] A silicon-based rasterized gate terahertz detector of the present invention will be described in detail below with reference to the embodiments and drawings.

[0024] A silicon-based rasterized gate terahertz detector of the present invention uses commercial CMOS and BiCMOS processes to prepare NMOS / PMOS rasterized gate terahertz detectors, and improves the gate structure on NMOS and PMOS transistors to form Grating structure. The transistor with rasterized gate receives the terahertz signal in the space, converts it into source-drain current, connects the source / drain with a low-noise amplifier circuit, rectifies and amplifies the output current signal, and obtains a subsequent readout circuit voltage signal can be used. The output voltage signal is a DC signal, wherein the amplitude of the DC signal is proportional to the intensity of the terahertz signal, and the relevant information of the incident terahertz signal can be obtained according to the output signal.

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Abstract

A silicon-base grated gate terahertz detector consists of a MOS transistor. The MOS transistor comprises a substrate layer. One end of the upper end surface of the substrate layer is provided with a source, and the other end of the upper end surface of the substrate layer is provided with a drain. A channel layer and an insulating layer are successively disposed from bottom to top on the upper endsurface of the substrate layer and between the source and the drain. The source and the drain are connected to the channel layer and the insulating layer. A gate of a grating structure is disposed onthe upper end surface of the insulating layer. The invention relates to the silicon-base grated gate terahertz detector. The grating structure is configured to couple a terahertz signal in space, anda gap of the grating structure is configured to diffract the terahertz signal, thereby increasing the local terahertz field strength. The gate of the NMOS/PMOS is prepared into the grating structureso as to effectively couple the terahertz signal in space to a transistor channel, and excite the plasma oscillation in the channel, thereby changing the current between the source and the drain, andrealizing the terahertz signal detection.

Description

technical field [0001] The invention relates to a terahertz detector. In particular, it relates to a silicon-based rasterized grid terahertz detector. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves (1THz=10 12 Hz), this band is in the submillimeter wave and far infrared band between microwave and infrared light, and belongs to the electromagnetic spectrum that has been less studied by previous researchers. The terahertz frequency band is a transitional frequency band from electronics to photonics, so it has many excellent characteristics, such as broadband, perspective, and safety. It has great application prospects in communication, chemistry, biology, medicine, security and other fields. [0003] Terahertz detectors are an important part of the application of terahertz technology. Terahertz detectors can be roughly divided into coherent detection and incoherent detection. Coherent detection mainly uses the terahertz time-domain spect...

Claims

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Application Information

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IPC IPC(8): H01L31/119H01L31/0232
CPCH01L31/02327H01L31/119
Inventor 马建国刘亚轩傅海鹏
Owner TIANJIN UNIV
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