32 results about "Terahertz detector" patented technology

The invention discloses a multi-mode nanometer measurement system and method based on terahertz scattering type scanning near-field optical microscopy and multi-frequency electrostatic force microscopy, and belongs to the technical field of near-field imaging, the measurement system comprises an AFM main body, a terahertz source, an optical path system, a terahertz detector, a multi-frequency signal generator and two phase-locked amplifiers; terahertz waves emitted by the terahertz source reach the terahertz detector through the optical path system, and near-field optical signals are obtained. The AFM comprises a metal coating probe; the multi-frequency signal generator generates sinusoidal signals with frequencies of omega1 and omega2; a sample is placed on the scanner, and the cantilever beam is controlled to vibrate at the frequency omega 1; an alternating voltage with the frequency of omega 2 is applied to a metal coating probe arranged at the top end of the cantilever beam; laser emitted by the laser is reflected to the light spot position detector through the cantilever beam, and morphology and electrostatic force signals are obtained through the two lock-in amplifiers respectively. According to the invention, a morphology signal, an optical signal and an electrostatic force signal can be synchronously obtained through single scanning.

The present application relates to the technical field of electronic circuit, and especially relates to a readout circuit of a terahertz detection array, which comprises: a readout link at least comprising a current feedback instrumentation amplifier, a programmable gain amplifier and an incremental analog-to-digital converter connected in sequence; the current feedback instrumentation amplifier amplifies the signal output by the detector and outputs a first-stage amplified signal, the current feedback instrumentation amplifier comprises an instrumentation amplifier body and a first ripple suppression module, the first ripple suppression module comprises a first redundant segmented current steering DAC and a first DAC code register; the programmable gain amplifier further amplifies the first-stage amplified signal, the programmable gain amplifier comprises a gain amplifier body and a second ripple suppression module, and the second ripple suppression module comprises a second redundant segmented current steering DAC and a second DAC code register. The present application effectively reduces the chip area and power consumption while ensuring that the readout circuit of the terahertz detection array has high gain, low noise and low offset.

The invention relates to the technical field of terahertz detection, in particular to a signal measurement method for a terahertz wave transmission system. According to the technical scheme, the method comprises the following steps that a terahertz source is used for emitting terahertz waves, and after the terahertz waves are transmitted through one or more optical assemblies, stable transmission light beams are formed; an image of the transmission light beam is collected through a terahertz detector, and an original gray level image is obtained; and carrying out image processing on the original grayscale image, and extracting a light spot area. A complete two-dimensional light spot image is obtained at a time through the area array detector, an effective light spot area is automatically extracted in combination with an image processing algorithm, coordinate mapping is carried out, and efficient and stable measurement of terahertz wave energy distribution is achieved; by calculating light spot center energy and comparing energy changes under different optical assembly configurations, the transmission loss of the assembly can be quantitatively analyzed, and a reliable and quantifiable measurement means is provided for terahertz system debugging, assembly performance evaluation and multi-scene application.

1. Name of the product in this design: Terahertz detection probe with integrated intelligent display function. 2. Purpose of this design: This design is intended for use as a probe view when installed on a terahertz detector. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

This invention relates to a planar superlens for spaceborne terahertz detectors. The planar superlens comprises an independent aluminum foil, on which an array of resonant units arranged in concentric rings is disposed. The resonant unit array includes various C-shaped resonant units with different structural parameters, each C-shaped resonant unit being a C-shaped hole structure etched into the aluminum foil. C-shaped resonant units with the same structural parameters are arranged at equal intervals on a ring band with the same arrangement radius, forming, from the inside out, a paraxial fine control module, a mid-ring band phase compensation module, a mid-to-far ring band phase modulation module, and an edge region phase coverage module. Compared with existing technologies, the superlens proposed in this invention has outstanding features such as large depth of focal length, tight focusing, lightweight, low cost, and resistance to space environments. It is particularly suitable for integration into terahertz detection payloads of meteorological satellites, which are extremely sensitive to weight and volume, and can be used for remote sensing missions such as ice cloud detection and atmospheric composition spectral line observation.

The application discloses a kind of based on machine learning auxiliary terahertz tobacco nondestructive testing device and method, belong to nondestructive testing technical field.The device of the present application includes laser generation module, beam splitter, terahertz transmitter, dual-function switchable workbench, detection light path module, terahertz detector and control and processing module, control and processing module inlay integration is the machine learning model specially designed for tobacco sample, for the terahertz time-domain spectroscopy data of sample to be detected is handled, obtains complete terahertz time-domain signal, simultaneously, can synchronous realization tobacco precision determination and moisture content rapid prediction.The present application has the advantages of miniaturization, low cost, high efficiency and high accuracy, is suitable for the nondestructive, real-time quality monitoring of whole process of tobacco production.

An agricultural system with an agricultural harvester has a terahertz sensor. The terahertz sensor includes at least one a terahertz source disposed to direct electromagnetic radiation toward a harvest material of the agricultural harvester. A terahertz detector is disposed to detect the terahertz electromagnetic radiation after the terahertz electromagnetic radiation interacts with the harvest material. A controller is operably coupled to the terahertz detector and is configured to detect a harvest-related parameter based on a signal from the terahertz detector and to perform an action based on a detected parameter.

The application discloses a ternary transition metal chalcogenide and application thereof in a terahertz detector, and realizes high-speed, high-sensitivity and room-temperature wide-spectrum terahertz detection under the driving of a strong topological surface state of the ternary transition metal chalcogenide.

The invention provides a novel terahertz spectrometer. The device mainly comprises a terahertz complex color light source system, a collimation module, a long-wave-pass optical filter, a terahertz tunable filter, a voltage supply module, a chopper, a controller, a to-be-detected sample, a focusing module, a terahertz detector, a data collector and a measurement and control system. The terahertz complex-color light source system is used for generating complex-color terahertz light beams, the collimation system is used for generating parallel light, the long-wave-pass optical filter is used for filtering long-wave-band components in the light source, the terahertz tunable filter and the voltage supply module are used for converting the complex-color light beams into monochromatic light beams, and the chopper and the controller are used for reducing measurement noise. The focusing module, the terahertz detector and the data collector are used for measuring the intensity of terahertz light beams, and the measurement and control system is used for controlling the whole system. Compared with an existing common terahertz spectrometer, the novel terahertz spectrometer has the advantages of being low in cost, high in vertical coordinate measurement accuracy (about 0.5%), high in measurement speed (about second magnitude) and the like. The novel terahertz spectrometer can provide a new scheme for the terahertz spectrum measurement field, the new scheme and an existing terahertz spectrum measurement method can form an angle potential, and a better terahertz spectrum measurement selection can be provided for many application scenes; and meanwhile, a novel terahertz time-resolved spectrum technology, a novel terahertz spectrum pumping detection technology and a novel terahertz spectrum imaging technology are expected to be created.

The application discloses a receiving antenna integrated with a low-impedance terahertz detector, which comprises a low-impedance terahertz detector located at the center, one crab claw-shaped metal sheet on each side, crab claw connecting arm metal sheets located between the terahertz detector and the two crab claw-shaped metal sheets and serving as connecting arms, and the overall structure is symmetric about the center. The application realizes effective integration of the on-chip low-impedance antenna and the low-impedance terahertz detector, realizes different working modes in different frequency bands, works in a resonant mode in a low frequency band and works in a traveling wave mode in a high frequency band, and realizes different working bandwidths in different frequency bands, that is, narrowband in the low frequency band and wideband in the high frequency band.

An existing terahertz detector is slow in response speed and narrow in response spectrum. The terahertz micro-cavity area array detector based on the bias plasma comprises a window and a photosensitive element, the photosensitive element comprises a first micro-cavity plate, a gas cavity layer and a second micro-cavity plate which are connected in sequence, the first micro-cavity plate is provided with a gas filling pipe, the gas filling pipe penetrates through the first micro-cavity plate, and the gas filling pipe is provided with a gas outlet. The gas filling pipe is communicated with the gas cavity layer, a discharge electrode is arranged on the second microcavity plate, the gas cavity layer is connected with a driving circuit through the discharge electrode, and the gas filling pipe is connected with a gas filling device. The terahertz detector has a spectral imaging function, adopts the principle that terahertz enters a gas cavity layer and the state of plasma changes, realizes detection of terahertz waves, can obtain information such as polarization and intensity of the terahertz waves, can solve the problems that an existing terahertz detector is low in response speed and narrow in response spectrum, is used for hidden target imaging, and has a wide application prospect.

The application discloses a kind of field effect transistor terahertz detector chips of quadtree structure array, including chip substrate and field effect transistor terahertz detector array;Field effect transistor terahertz detector array is prepared on the surface of chip substrate using semiconductor technology, and is arranged in quadtree structure array on chip substrate;Field effect transistor terahertz detector is composed of field effect transistor and terahertz antenna, and the characteristic size of terahertz antenna is smaller and the center frequency is higher closer to the center position of field effect transistor terahertz detector array;The field effect transistor terahertz detector of different terahertz frequency band is integrated on a chip in the application, can realize the detection of wide-spectrum terahertz wave, solve the problem that the current field effect transistor terahertz detector detects narrow spectrum, and the array arrangement mode of quadtree structure can effectively reduce the area of chip, to reduce chip cost.

The invention discloses a terahertz detector and a preparation method thereof. The terahertz detector comprises a substrate; the TaNiTe5 layer is positioned on the substrate; the electrode is located on the substrate, and the electrode comprises a source electrode and a drain electrode which are electrically connected with the two ends of the TaNiTe5 layer respectively. According to the terahertz detector, the TaNiTe5 layer of the quasi-one-dimensional topological structure serves as the channel material layer of the terahertz detector, the unique double Dirac surface state and the quasi-one-dimensional structure of the TaNiTe5 layer can bring high carrier mobility, and effective detection of terahertz waves at the room temperature is achieved through a photoconductive response mechanism.

The application discloses a terahertz detector and a preparation method and application thereof, and the preparation method comprises the following steps: providing a first substrate; preparing a graphene layer on the first substrate; providing a second substrate; preparing an electrode structure on the second substrate, wherein the electrode structure comprises a source electrode and a drain electrode; and transferring the electrode structure from the second substrate to the first substrate by a transfer process, so that the source electrode and the drain electrode are electrically connected to two ends of the graphene layer, respectively. The terahertz detector is prepared in situ by using a low-energy van der Waals metal integration technology, the influence of the preparation of the electrode structure on the graphene layer is effectively avoided, the excellent intrinsic performance of the graphene layer is maintained, and the high-performance terahertz detector is obtained.

The present application relates to a kind of terahertz security check instrument of real-time panoramic terahertz imaging, 360° panoramic scene from object side emits terahertz electromagnetic wave, after reflection by panoramic terahertz optical system, enter transmission type terahertz imaging system and gather, image on terahertz detector focal plane, like circular ring distribution.Makes that terahertz imaging system need not rotate and can directly complete 360° panoramic ring view, obtains annular panoramic terahertz image.Then through image processing software mapping transformation, it is changed into the cylindrical surface unfolded image that conforms to daily visual habit from annular image, so that the range of 360° around it can be imaged in real time by single terahertz system.

This invention proposes a sensing device based on a folded continuous-domain bound-state all-dielectric crystal metasurface, comprising a terahertz emitter, an all-dielectric photonic crystal metasurface, and a terahertz receiver. The all-dielectric photonic crystal metasurface sensing device has a periodic aperture array structure on its surface, and in the x-direction, it forms a supercell periodic modulation structure through alternating large and small apertures, achieving Brillouin zone folding in the x-direction. When an incident terahertz pulse emitted by the terahertz emitter perpendicularly irradiates the all-dielectric photonic crystal metasurface, the transmitted terahertz pulse formed after interaction is received by the terahertz detector. When the all-dielectric photonic crystal metasurface is excited by a terahertz wave, the local electric field enhancement effect formed by the periodic aperture array structure at the edge and inside of its pores passively captures and enriches sample molecules of the tested solution sample in the hot spot region within the pores. This invention improves the detection sensitivity and operational convenience for trace samples.

This invention discloses a topological semi-metallic terahertz detector integrated with a butterfly antenna and its fabrication method. The device fabrication steps mainly involve mechanical lift-off, ultraviolet lithography, thermal evaporation coating, point transfer, and ultrasonic wire bonding to form the butterfly antenna-integrated topological semi-metallic terahertz detector. The device structure, from bottom to top, consists of: a first layer of intrinsic silicon substrate, a second layer of oxide layer, a third layer of topological semi-metallic nickel selenide telluride and butterfly antenna electrodes, and a fourth layer of topological semi-metallic graphene. By integrating the butterfly antenna and constructing a terahertz detector using a topological semi-metallic vertical heterojunction, the topological characteristics of the quantum states of the topological semi-metallic material can be tuned. The butterfly antenna can be used to focus the terahertz light field and improve the material's light absorption, ultimately achieving terahertz detection and imaging functions at room temperature. The advantages of this invention are fast detector response speed, self-driven operation at room temperature, low noise equivalent power, and ease of integration.

The application discloses a terahertz detector and an integrated preparation method thereof. The terahertz detector comprises a planar circularly polarized helical antenna integrated with a field effect transistor device, the planar circularly polarized helical antenna is used for simultaneously receiving two mutually orthogonal electric field components and forming a rotating electric field with a phase difference of 90 DEG; the planar circularly polarized helical antenna has a first feeding end and a second feeding end, the first feeding end is electrically connected with one electrode of the field effect transistor device, and the second feeding end is electrically connected with another electrode of the field effect transistor device, so as to couple the received terahertz signal to a two-dimensional electron gas channel. The planar circularly polarized helical antenna is adopted, different polarized direction terahertz electromagnetic waves are effectively received, the adaptability of the detector to the polarization state change of the terahertz wave is improved, and the response stability and receiving efficiency of the detector in the actual application scene are improved; the helical antenna is integrated with the field effect transistor device, and the terahertz signal coupling efficiency is improved.

This invention discloses a terahertz detector based on the field-enhanced quantum tunneling effect of a nano-gap, applicable to the fields of terahertz detection and micro / nanoelectronic devices. It addresses the problem of insufficient detection sensitivity caused by the extremely low coupling efficiency of traditional tunneling devices with free-space terahertz waves due to their extremely small size. The detector of this invention includes a dielectric substrate, a metal receiving antenna, a nano-gap enhancement region, and a signal monitoring circuit; its structure is a planar horizontal structure. This invention utilizes the metal receiving antenna to collect incident terahertz waves, thereby generating a high-intensity local electric field in the nano-gap enhancement region. This local electric field drives electrons in the metal to undergo nonlinear quantum tunneling or field emission within the nano-gap, achieving rectification and detection of the terahertz signal. Compared to traditional detectors, this invention requires no external light source pumping and possesses advantages such as room-temperature operation, large response bandwidth, high sensitivity, and ease of integration.

The invention discloses a design method and application of a zero-grid-voltage two-end HEMT terahertz detector. According to the method, firstly, the structure of an HEMT device is designed, and device parameters are adjusted, so that the transconductance peak voltage is controlled within the range of 0 + / -50 mV; compared with a traditional method, the transconductance peak voltage can be close to 0 V by directly regulating and controlling device parameters (such as the thickness of the barrier layer and the component proportion of the channel layer), and therefore the device can work in the maximum transconductance area under the condition that grid voltage does not need to be externally added. Therefore, the circuit design is simplified, the complex circuit layout is avoided, the two-dimensional electron gas can be prevented from being damaged, and the high electron mobility of the two-dimensional electron gas is maintained. In addition, the method can effectively reduce power consumption and noise, avoids unstable working points caused by grid voltage drift, and remarkably improves the long-term stability and reliability of the detector.

The present application relates to the technical field of terahertz detectors, and more particularly to a photothermal graphene terahertz detector and a preparation method thereof, the preparation method comprising: S1. performing a patterned etching treatment on a local surface of a substrate layer; S2. preparing a metal electrode at a substrate anchoring area; S3. transferring a graphene film to the surface of the substrate layer, the graphene film covering the substrate etching area and the substrate anchoring area; and S4. performing an annealing treatment. The photothermal graphene terahertz detector comprises a substrate layer, a silicon dioxide substrate layer comprising a substrate etching area and a substrate anchoring area; the silicon dioxide substrate layer is plated with a first electrode and a second electrode, and a graphene film is arranged on the silicon dioxide substrate layer; and the graphene film covers the substrate etching area and the substrate anchoring area. The present application can simultaneously solve the problems of thermal gradient establishment, carrier mobility maintenance and equivalent noise suppression, and realize a self-powered terahertz detector with high sensitivity, fast response and wide frequency band adaptation at room temperature.

The invention relates to a broadband terahertz frequency and power measurement method, which comprises the following steps of: for a plurality of terahertz detectors, completing voltage response rate calibration of each detector under different frequencies through a known terahertz wave source; based on the calibrated voltage response rate of each detector, the voltage response rate ratio of any two detectors is obtained; obtaining the frequency of the terahertz signal to be detected by using the terahertz detector with the calibrated voltage response ratio; and realizing power measurement according to the frequency of the terahertz signal to be measured. The method provided by the invention is realized based on a plurality of terahertz detectors, and the frequency measurement range can be increased by increasing the detectors with different detection frequencies, so that the method for measuring the terahertz frequency and power provided by the invention has a broadband characteristic.

The application discloses a graphene terahertz detector integrated with a grid-shaped antenna and a preparation method thereof. The device preparation steps mainly include the following steps: transferring single-layer graphene onto a silicon / silicon dioxide substrate, preparing the grid-shaped antenna through standard ultraviolet lithography and electron beam evaporation, removing the excessive graphene through an oxygen ion etching process, and finally obtaining the graphene terahertz detector integrated with the grid-shaped antenna through a wire bonding process. The device structure is sequentially from bottom to top: the first layer is an intrinsic silicon substrate, the second layer is an oxide layer, and the third layer is graphene and a grid antenna electrode. The terahertz detector is formed by the grid antenna and the graphene, the carrier distribution in the channel can be adjusted from the micro-atomic level, the unique grid antenna can achieve high-efficiency focusing of a terahertz light field, and finally the high-sensitivity terahertz detection at room temperature is realized. The application has the advantages of fast response speed of the detector, self-driven operation at room temperature, small noise equivalent power and large-scale integration.

This invention discloses an object detection method based on a handheld terahertz security scanner, belonging to the field of terahertz object detection technology. The method includes the following steps: using multiple pairs of terahertz detectors to receive terahertz signals emitted by the target itself; using a terahertz chip to convert signals of different energies into electrical signals of different amplitudes and amplifying them, then converting the analog signals into digital signals; preprocessing the obtained digital signals using a moving average algorithm; performing differential processing on the preprocessed terahertz detector digital signals to obtain corresponding differential signals; and then using instantaneous energy variance analysis to determine whether a corresponding object exists. This method has advantages such as high detection accuracy and strong adaptability.

The embodiment of the specification provides a non-invasive blood glucose monitoring system, method and wearable device. The system comprises: a micro terahertz chip comprising a terahertz signal source, a dual-mode resonator and a terahertz detector; the terahertz signal source is used for applying a terahertz signal to a target tissue, the dual-mode resonator is used for generating a dual-mode resonance signal, and the terahertz detector is used for extracting the dual-mode resonance signal; a processing unit is used for extracting a first resonance mode frequency and a second resonance mode frequency from the dual-mode resonance signal and calculating a differential characteristic quantity, the first resonance mode frequency and the second resonance mode frequency being sensitive to glucose concentration and moisture change respectively; an algorithm unit is used for calculating and outputting a blood glucose concentration value according to the differential characteristic quantity, temperature and a pre-trained prediction model. The system can effectively offset the interference of tissue moisture fluctuation through the design of the differential characteristic quantity; meanwhile, the influence of factors such as temperature and individual difference is excluded through the prediction model, and the accuracy of blood glucose measurement is significantly improved.

The disclosure discloses a multispectral imaging system and method for real time detection of breast cancer margin during a tumor resection surgery by combining terahertz and autofluorescence images. The system comprises terahertz and fluorescence modules in a housing having a sample holder to enable raster scan of the sample. The terahertz module has terahertz emitter antennas for generating terahertz radiation to the sample, and a terahertz detector to receive reflected terahertz signal from the sample. A fluorescence module with UV excitation LEDs induces fluorescence and a camera to receive emitted autofluorescence. A microcontroller connected to an electronic control unit is configured to display or to overlap and combine terahertz and autofluorescence images to determine breast cancer margin, via an AI module. The AI module is configured to perform classification of the feature set machine learning models to obtain classification with high with high sensitivity and specificity.

The invention discloses a Seebeck effect-based carbon nanotube flexible terahertz detector and a preparation method thereof, and the detector sequentially comprises a flexible substrate, a metal oxide grid electrode, a first electrode antenna, a second electrode antenna and a carbon nanotube film PN junction from bottom to top, the intrinsic P-type carbon nano tube comprises an intrinsic P-type carbon nano tube and an N-type carbon nano tube formed by chemical doping; the preparation method provided by the invention does not need a high-temperature process, so that the deformation of the flexible material is avoided, and the structural stability is improved. Coupling of various enhancement structures is achieved, and the requirement for high sensitivity of a terahertz detector is met. In the aspect of structural design, the preparation process of the N-type doped carbon nanotube is post-positioned, so that the condition of dedoping or degeneration of the material due to the influence of the subsequent process is avoided. According to the invention, the PN junction of the carbon nano tube is coupled with the terahertz antenna of the asymmetric electrode, so that a high-response carbon nano tube terahertz photosensitive structure is formed, and near-zero power consumption detection of terahertz radiation signals is realized.

A multi-dimensional terahertz information detection method and device are disclosed. The method uses a terahertz detector at a predetermined distance from a terahertz light source to obtain two sets of spatial intensity distribution information: one set is the spatial intensity distribution of the terahertz light to be detected directly collected, and the other set is the spatial intensity distribution of the terahertz light after being regulated by a microstructure array with different phase regulation characteristics. Through a pre-trained neural network, the phase information, spectral information and polarization information of the terahertz light to be detected are reconstructed according to the two sets of spatial intensity distribution information. Through phase regulation of the microstructure array and information reconstruction of the neural network, the disclosure realizes simultaneous detection of multi-dimensional information, avoids complex optical system design; adopts double neural networks to reconstruct different physical mechanisms respectively, improves the detection accuracy; has a fast detection capability of milliseconds, meets the actual application requirements; the system structure is simple, easy to implement, and has good expansibility.

The invention discloses a helmet-mounted comprehensive positioning method and system combining terahertz and inertia. An inertial sensor and a corner reflector are installed on a helmet, and a terahertz detector is installed on a machine; in the working process, the inertial sensor is kept to be started, inertia-based helmet posture information is obtained through calculation according to measurement information of the inertial sensor, the terahertz detector is started regularly, and terahertz-based helmet posture information is obtained through calculation according to the position, detected by the terahertz detector, of the corner reflector. And performing regular calibration on the inertia-based helmet attitude information by using the terahertz-based helmet attitude information obtained regularly, and taking the inertia-based helmet attitude information as helmet real-time attitude information output to the outside. Terahertz measurement positioning is introduced on the basis of inertial measurement positioning, errors caused by precision drift of an inertial device during long-time working can be made up, the problem of data discontinuity of terahertz measurement positioning under the condition that a measurement channel is blocked can be solved, and positioning precision is high, reliable and stable.

The application discloses a waveguide-based plug-in terahertz digital holography device, and belongs to the field of terahertz digital holography imaging. The device comprises a terahertz radiation source, a terahertz waveguide, a terahertz half-transmission half-reflection mirror, a terahertz focusing lens, a terahertz beam expander, an imaging sample, a terahertz detector, a metal mirror and a computer. The application uses a terahertz waveguide to replace a conventional terahertz digital holography space optical path, and integrates discrete devices in the conventional optical path into the waveguide, so that the terahertz digital holography device is integrated compactly, and the problems of complex structure and large volume of the current terahertz digital holography device are solved. The terahertz source can be directly aligned with the terahertz waveguide for plug-in, so that the alignment difficulty problem caused by the invisible terahertz wave in the current terahertz digital holography optical path assembly and adjustment is solved. The digital holographic imaging of the sample is conveniently realized, the quantitative holographic data of the sample including amplitude and phase are acquired, the shortage of terahertz wave intensity imaging is made up, and therefore the application has wide application prospects in the fields of terahertz wave nondestructive testing, biomedical imaging and safety inspection.