This invention addresses the shortcomings of existing terahertz sensors in terms of sensitivity and tunability by proposing a high-sensitivity
metamaterial sensor based on
plasmon-induced transparency (PIT) and
Fano resonance in
monolayer graphene. The specific
graphene sensing structure of this invention consists of a vertical
graphene strip and proportionally designed graphene resonant rings on both sides. This symmetrical graphene structure is attached to a SiO2
dielectric layer with a suitable
relative permittivity, forming a typical transmission-type
metamaterial sensor. The resulting terahertz
metamaterial sensor possesses an excellent sensitivity of up to 2.84 THz / RIU, a superior quality factor, and insensitivity to changes in polarization and incident angle. Furthermore, by adjusting the structural parameters, flexible switching between dual functions can be achieved, significantly enhancing the accuracy of material detection and the range of
sensing applications. This invention offers advantages such as high sensitivity, strong tunability, simple structure, and high stability. This design integrates the excellent characteristics of
Fano resonance and the PIT effect, achieving the high sensitivity requirements of the sensor and successfully overcoming the performance limitations of traditional single-function sensors.