471results about How to "Improve sensor sensitivity" patented technology

Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

A capacitive pressure sensor and method for its fabrication. The sensor is fabricated from first and second wafers to have a mechanical capacitor comprising a fixed electrode and a moving electrode defined by a conductive plate. The sensor further has a diaphragm on a surface of the first wafer that is mechanically coupled but electrically insulated from the conductive plate. A conductive layer on the surface of the first wafer is spaced apart from the conductive plate to define the fixed electrode. The second wafer is bonded to the first wafer and carries interface circuitry for the sensor, including the conductive plate and the fixed electrode which are between the first and second wafers and electrically connected to the interface circuitry. At least an opening is present in the first wafer and its first conductive layer by which the diaphragm is released and exposed to an environment surrounding the sensor.

The invention discloses a graphene film sensitized D-shaped optical fiber surface plasmon resonance (SPR) sensor. The sensor comprises a D-shaped optical fiber, wherein a silver film layer is arranged on the polished surface of the D-shaped optical fiber; and a graphene film layer is arranged on the surface of the silver film layer. A preparation method comprises the following steps of: (1) preparing the D-shaped optical fiber, and preparing the silver film layer on the polished surface of the D-shaped optical fiber; and (2) preparing the graphene film layer on the surface of the silver film layer. The D-shaped optical fiber is used as a light transmission medium, an SPR structure is formed by plating a silver film on the surface of the D-shaped optical fiber, the sensitivity of the SPR sensing structure is increased by depositing or growing a graphene film material on the surface of the silver film, and the sensor has the prominent advantages of small volume, light weight, high sensitivity, quick response and the like, and has wide application prospects in the aspect of detecting trace gas, liquid, chemical elements, deoxyribonucleic acid (DNA) and the like in the fields of biology, chemistry, medicine and the like.

A micromachined magnetic field sensor integrated with electronics is disclosed. The magnetic field sensors utilize Hall-effect sensing mechanisms to achieve 3-axis sensing. A Z axis sensor can be fabricated either on a device layer or on a conventional IC substrate with the design of conventional horizontal Hall plates. An X and Y axis sensor are constructed on the device layer. In some embodiments, a magnetic flux concentrator is applied to enhance the performance of the magnetic field sensor. In some embodiments, the magnetic field sensors are placed on slope sidewalls to achieve 3-axis magnetic sensing system. In some embodiments, a stress isolation structure is incorporated to lower the sensor offset. The conventional IC substrate and device layer are connected electrically to form a 3-axis magnetic sensing system. The magnetic field sensor can also be integrated with motion sensors that are constructed in the similar technology.

The invention discloses a manufacturing method of a tunable triangular metal nano particle array structure. The method comprises the following steps: (1) selecting a substrate with a suitable model according to the requirement of transmission wavelength, and carrying out cleaning and hydrophiling treatment on the substrate; (2) evenly self-assembling a layer of nano spheres on the surface of the substrate; (3) etching the manufactured self-assembling nano sphere layer by using a reaction ion etcher (RIE) process to change the size of gaps between adjacent nano spheres; (4) self-assembling etched nano spheres to serve as a mould, and filling metals in gaps between adjacent nano spheres; and (5) removing the nano sphere self-assembling layer by using a Lift off process to obtain an array chip in a metal nano structure. The manufactured chip in the metal nano structure has controllable optical property, can be applied to fields such as local surface plasma resonance (LSPR) sensing, surface enhanced Raman spectroscopy (SERS) and the like, and can realize rapid detection of biologic and chemical molecules.

Disclosed in a non-contacting electric potential sensor capable of being readily reduced in its size, which includes a detecting electrode, an electrically-conductive movable shutter, and a driving unit for driving the electrically-conductive movable shutter. The detecting electrode is to be placed facing a measurement object whose electric potential is to be measured. The electrically-conductive movable shutter is disposed so as to be movably located in a spacing formed between the detecting electrode and the measurement object when the detecting electrode is placed facing the measurement object, so that an exposure degree of the detecting electrode against the measurement object can be controlled. The driving unit includes a current injecting unit for selectively injecting current into the electrically-conductive movable shutter in a direction approximately perpendicular to a moving direction of the electrically-conductive movable shutter.

A micromechanical thermal-conductivity sensor is provided which includes a thermally insulated diaphragm formed by a recess in a base plate exhibiting poor thermal conductivity. At least one heating element is applied on the diaphragm, at least one temperature-dependent electrical resistor is applied on the diaphragm for measuring the temperature of the diaphragm, as well as at least one further temperature-dependent electrical resistor is applied outside of the diaphragm on the base plate for measuring the ambient temperature. On one or both of its sides, the diaphragm is covered by a porous cover plate permitting gas exchange by diffusion, a cavity being left open between the diaphragm and the porous cover plate.