40 results about "Gallium sulfide" patented technology

A device and method for emitting output light utilizes a mixture of Group IIB element Selenide-based phosphor material and Group IIA element Gallium Sulfide-based phosphor material in which the Group IIA element includes Calcium, Strontium and/or Barium to convert some of the original light emitted from a light source of the device to longer wavelength light to change the optical spectrum the output light. Thus, the device and method can be used to produce white color light. The mixture of Group IIB element Selenide-based and Group IIA element Gallium Sulfide-based phosphor materials is included in a wavelength-shifting region optically coupled to the light source, which may be a blue light emitting diode (LED) die.

The invention provides novel non-linear optical crystal gallium germanium barium sulfide, and a growing method and application thereof. The chemical formula is BaGa2GeS6 (short for BGGS). The novel non-linear optical crystal gallium germanium barium sulfide has the chemical formula of BaGa2GeS6, has an asymmetrical center structure and belongs to a trigonal crystal system, wherein the space group is R3; and cell parameters are that: a=9.5967(5) Angstrom, b=9.5967(5) Angstrom, c=8.6712(7) Angstrom, alpha=90 degrees, beta=90 degrees, gamma=120 degrees, Z=1, and V=691.62 Angstrom3. The clock multiplier factor of the BaGa2GeS6 is 0.8 time that of AgGaS2. The BGGS compound is obtained by sintering at high temperature through a solid phase synthesis method. The BGGS monocrystal can grow successfully by a crucible descending method. The BaGa2GeS6 has a non-linear optical effect, is not dissolved in dilute acid, has high chemical stability, can be widely applied in various non-linear optical fields, and can develop non-linear optical application of a middle infrared band.

The invention discloses a method for preparing a flexible optical detector on the basis of the two-dimensional functional material, which relates to a preparation method for the optical detector. The method mainly aims to solve the technical problems that the conventional flexible optical detector has high photolithographic process technology cost and has difficulty in realizing mass production. The method comprises the following steps of: 1) preparing semiconductor materials, i.e. single crystal gallium selenide or single crystal gallium sulfide; 2) sticking and stripping on the surface of the semiconductor material by a scotch adhesive tape; 3) transferring the two-dimensional semiconductor material to a substrate; 4) covering a copper mask to the substrate processed in the step 3), depositing a gold metal layer and a chrome layer, removing the mask, and carrying out annealing processing; and 5) screening electrode couples with photoelectronic response to ultraviolet light in an optical detector semiconductor obtained in the step 4) to obtain the flexible optical detector prepared on the basis of the two-dimensional functional material. The ultraviolet light response degree of the optical detector is above 100AW<-1>. The flexible optical detector can be used as a microelectronic device and a photosensitive device to be used for the field of information transmission and storage.

The invention discloses an h-molybdenum trioxide/bis-metal sulfide composite material, a preparation method and an application, and belongs to the technical field of photo-catalytic composite materials. The h-molybdenum trioxide/bis-metal sulfide composite material is composed of hexagonal prism-like molybdenum trioxide, namely h-MoO3, and two metal sulfides, wherein one metal sulfide is 2H-molybdenum disulfide, namely 2H-MoS2, and the other metal sulfide is zinc sulfide, nickel sulfide, gallium sulfide, or copper sulfide. The h-molybdenum trioxide/bis-metal sulfide composite material has readily available raw materials, low cost, and simple preparation process, and has great industrial application values as a photo-catalytic composite material in a wastewater treatment process.

In one embodiment, a cathode composition comprises a transition metal and/or a transition metal salt, wherein the transition metal is selected from the group consisting of nickel, iron, cobalt, chromium, manganese, molybdenum, zinc, and antimony, and a combination comprising at least one of the foregoing; an alkali metal halide; an electrolyte salt comprising an alkali metal halide and a metal halide; and a sulfide compound selected from the group consisting of gallium sulfide, antimony sulfide, and a combination comprising at least one of the foregoing. An energy storage device comprising the electrode composition is also provided.

Disclosed is a phosphor for displays which is characterized by being composed of a europium-activated thiogallate phosphor represented by the following chemical formula: SrGa₂S₄:Eu. This phosphor is also characterized by containing no gallium sulfide (Ga₂S₃) and being a green phosphor which emits light when excited by an electron beam having an accelerating voltage of 5-15 kV. Consequently, this invention provides a phosphor for displays having high luminance, which emits light when excited by a pulse electron beam having an accelerating voltage of 5-15 kV.

The invention provides a compound NH4GaS2 and a preparation method and application thereof. The preparation method includes: mixing gallium oxide and thiourea evenly and adding the gallium oxide and thiourea to a reactor; adding oxalic acid and sealing the reactor; heating the reactor for reaction to obtain white granular crystal, namely the compound NH4GaS2, after reaction. The compound NH4GaS2 is synthesized by adopting the simple thiourea oxalate method which is simple and easy to implement, the method does not need to be carried out under harsh vacuum reaction conditions, raw materials arecheap and easy to obtain, and low cost, low energy consumption and easy industrial production are achieved; the compound has good photocatalytic activity for hydrogen production under simulated sunlight and can be used as raw material for the synthesis of other gallium sulfides, and good application prospect is achieved.

The present invention provides a novel photoelectric detector based on copper indium gallium selenium and copper indium gallium sulfide. According to the composite functional layer, a contact part ofthe copper indium gallium selenium and the copper indium gallium sulfide is changed into copper indium gallium selenium sulfide, a composition is gradually changed in a transverse direction, the functional layer is modified, the electrical performance is adjusted to meet requirements of the photoelectric detector, the sensitivity of the detector is further improved, and the stability of the sensoris greatly improved.

The invention discloses a method for preparing chalcopyrite thin-film solar cells. The method comprises the following steps of: (a) by using a non-vacuum manufacture procedure, carrying out in-situ reaction on metals such as copper, indium, gallium and the like and hydrogen chloride or chlorine so as to form reaction precursors, and then reacting the reaction precursors with hydrogen selenide or hydrogen sulfide; (b) preparing light absorption layers of selenium/copper-indium-gallium sulfide and selenium/copper-zinc-tin sulfide thin-film solar cells in cooperation with a vapor-phase epitaxial growth technique; and (c) preparing buffer layers and transparent conductive layers of the thin-film solar cells in cooperation with oxygen. By using the method disclosed by the invention, high-purity chalcopyrite thin-film solar cells can be prepared, and the production cost is greatly saved.

The invention discloses a light sensitive energy-saving street lamp. A sensor is arranged at the top of the street lamp and can control on and off the street lamp according to the intensity of visible light, a light sensitive resistor is arranged in the sensor and comprises an upper electrode layer, a lower electrode layer and a middle light sensitive material layer, and the light sensitive material layer comprises gallium sulfide, cadmium sulfide, zinc sulfide, copper sulfide, beryllium sulfide, strontium sulfide, germanium oxide, niobium oxide, hafnium, iridium and Y4-x-yLuxFeyO6. A light sensitive material is low in manufacturing cost, resistant to ageing, wide in application field and beneficial to large-scale popularization and application, has excellent weather resistance and corrosion resistance and has strong compatibility with the sensor, the light sensitive energy-saving street lamp can automatically sense the visible light, can be automatically turned on and turned off according to the intensity of the visible light and conforms to the advocated trend of energy conservation and environmental protection, and resources are reasonably distributed and used.

Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (CIS), copper indium gallium selenide (CIGS), copper indium sulfide (CIS) or copper indium gallium sulfide (CIGS)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different physical properties. Chalcopyrite compound thin films produced by the methods can be used as light-absorbing layers for thin-film solar cells. The use of the chalcopyrite compound thin films enables the fabrication of thin-film solar cells with improved efficiency at low costs.

The invention provides a method for preparing a copper gallium sulfide photoelectric thin film from copper chloride, and belongs to the technical field of preparation of photoelectric thin films for solar cells. The copper gallium sulfide photoelectric thin film is obtained through the following steps of: firstly, cleaning a glass substrate and then putting CuCl2.2H2O, Ga(NO3)3.xH2O and CH3CSNH2 into a solvent for mixing evenly; obtaining a precursor thin film on a glass sheet through a spin-coating method, drying the precursor thin film and putting the precursor thin film into a closed container with hydrazine hydrate; preventing a precursor thin film sample from being in contact with the hydrazine hydrate and arranging the closed container with the sample into an oven for heating and heat preservation treatment; and finally taking out the sample to soak for 24 hours and then drying the sample to obtain the copper gallium sulfide photoelectric thin film. A high-temperature and high-vacuum condition is not needed; the method is low in demands on instruments and equipment, low in production cost, high in production efficiency and easy to operate; the obtained copper gallium sulfide photoelectric thin film has relatively good continuity and uniformity; the main phase is a CuGaS2 phase; by the novel technology, the component and the structure of a target product are easy to control; and a low-cost production method capable of achieving industrialization is provided for preparation of the high-performance copper gallium sulfide photoelectric thin film.

The invention provides a method for preparing a copper gallium sulfide photoelectric thin film from copper sulfate, and belongs to the technical field of preparation of photoelectric thin films for solar cells. The copper gallium sulfide photoelectric thin film is obtained through the following steps of: firstly, cleaning a glass substrate and then putting Cu2SO4.5H2O, Ga(NO3)3.xH2O and CH3CSNH2 into a solvent for mixing evenly; obtaining a precursor thin film on a glass sheet through a spin-coating method, drying the precursor thin film and putting the precursor thin film into a closed container with hydrazine hydrate; preventing a precursor thin film sample from being in contact with the hydrazine hydrate and arranging the closed container with the sample into an oven for heating and heat preservation treatment; and finally taking out the sample to soak for 24 hours and then drying the sample to obtain the copper gallium sulfide photoelectric thin film. A high-temperature and high-vacuum condition is not needed; the method is low in demands on instruments and equipment, low in production cost, high in production efficiency and easy to operate; the obtained copper gallium sulfide photoelectric thin film has relatively good continuity and uniformity; the main phase is a CuGaS2 phase; by the novel technology, the component and the structure of a target product are easy to control; and a low-cost production method capable of achieving industrialization is provided for preparation of the high-performance copper gallium sulfide photoelectric thin film.

The invention relates to a radio power generation device and discloses a graphene/monatomic layer GaS/gallium arsenide radio generator. A layer of monatomic layer GaS is formed on a gallium arsenide substrate passivated by ammonium sulfide, a layer of graphene is attached to the layer of monatomic layer GaS, a first electrode and a side electrode are arranged, and the graphene is in direct contactwith a monatomic layer gallium sulfide surface of gallium arsenide to form a heterojunction. The key point of the generator lies in that graphene contacts gallium arsenide passivated by ammonium sulfide to form a Schottky junction and a Schottky barrier, t radio frequency waves (sub-6G) emitted by an emission source can be collected, the quantum property of the radio frequency waves stimulates hot electrons in the graphene, and a tunneling process occurs to form a current. External radio frequency waves are directly converted into direct-current electric energy, and electric energy can be provided for electronic equipment such as wearable equipment and sensors anytime and anywhere. Compared with traditional wireless charging equipment, the generator is more flexible, higher in efficiencyand simple in device structure.

The invention discloses a praseodymium-ytterbium co-doped zirconium gallium sulfide glass up-conversion luminescent material of which the chemical formula is ZrS-Ga2S3-R2S: xPr<3+>, yYb<3+>, in the formula, R is at least one of a lithium element, a sodium element, a potassium element, a rubidium element and a caesium element; x is 0.01-0.06; and y is 0.01-0.04. In the photoluminescence spectra of the praseodymium-ytterbium co-doped zirconium gallium sulfide glass up-conversion luminescent material, the excitation wavelength of the praseodymium-ytterbium co-doped zirconium gallium sulfide glass up-conversion luminescent material is 578nm, a luminescent peak is formed by transition radiation of Pr<3+> ions from <3>P<0> to <3>H<4> in a wavelength zone of 483nm, and thus the material can be used as a blue luminescent material. The invention further provides a preparation method of the praseodymium-ytterbium co-doped zirconium gallium sulfide glass up-conversion luminescent material and an organic light-emitting diode using the praseodymium-ytterbium co-doped zirconium gallium sulfide glass up-conversion luminescent material.

The present invention belongs to the field of solar cell preparation, in particular to a method for improving efficiency of a flexible copper indium gallium sulfide selenide thin film solar cell. Thespecific steps are as follows: firstly, a molybdenum electrode is sputtered on a substrate; a CIGSSe precursor solution is prepared; the precursor solution is spin-coated on the substrate to prepare aCIGSSe prefabricated film, which is heated, selenized and annealed to obtain a CIGSSe film; then a cadmium sulfide film is prepared on the CIGSSe film; zinc oxide and indium doped tin oxide thin films are sputtered on the cadmium sulfide film in turn; finally silver electrode evaporation is carried out, then the flexible CIGSSe thin film solar cell is obtained. By introducing bismuth and potassium compounds into the CIGSSe precursor solution, the growth of CIGSSe crystals is promoted; grain boundary defects are passivated; and then the performance of the CIGSSe solar cell is improved. The invention is environmental, safe and low-cost, and the efficiency of the CIGSSe thin film solar cell is effectively improved.