11 results about "Gallium sulfide" patented technology

The invention relates to a sulfur-gallium-silver-sodium compound and a sulfur-gallium-silver-sodium infrared nonlinear optical crystal as well as a preparation method and application thereof, the molecular formula of the compound is NaAg3Ga8S14, the molecular weight is 1353.20 g / mol, the compound has an asymmetric center and is crystallized in a Cm space group of a monoclinic system, and the cell parameters are as follows: a is equal to 12.2616 (8), b is equal to 11.0956 (7), c is equal to 9.2131 (6), beta is equal to 114.981 (2) degrees, Z is equal to 2, and the volume is 1136.18 (13) 3. The crystal is prepared by a high-temperature melt method, a chemical vapor transport method or a Bridgman-Stockbarger method. The crystal has the advantages of being high in laser damage resistance, moderate in nonlinear optical effect, wide in light-transmitting wave band, large in hardness, good in mechanical performance, not prone to fragmentation and deliquescence, easy to process and store and the like, and can be used for manufacturing infrared nonlinear optical devices.

The present invention provides a solution-based method for preparing a gradient-bandgap copper indium gallium sulfide selenide solar cell, comprising the following steps: preparing a copper indium gallium sulfide precursor solution; preparing a silver indium sulfide precursor solution; preparing a copper indium gallium sulfide precursor film containing a silver indium sulfide layer; performing a selenization treatment to obtain a copper indium gallium sulfide absorber layer; and depositing a buffer layer, a window layer, and electrodes to prepare a copper indium gallium sulfide selenide thin-film solar cell with a gradient bandgap. The solution-based method for preparing a gradient-bandgap copper indium gallium sulfide selenide solar cell employs a method of inserting an AIS interlayer during spin-coating of the precursor film, thereby selenizing to obtain an absorber layer with a gradient bandgap. This method improves crystal quality while constructing a gradient bandgap, increasing the cell's long-wavelength absorption and ultimately enhancing device performance.

The invention discloses a high-performance two-dimensional transistor and a preparation method and application thereof, and relates to the technical field of semiconductor material manufacturing, and the structure of the transistor comprises a channel layer, a gate dielectric layer and an electrode assembly. Wherein the channel layer is made of a two-dimensional semiconductor material; the gate dielectric layer is made of a layered phosphorus gallium sulfide material; the electrode assembly comprises a grid electrode, a source electrode and a drain electrode; the channel layer and the gate dielectric layer are combined through Van der Waals force. The preparation method comprises the following steps: obtaining a two-dimensional material sheet through mechanical stripping, and sequentially stacking the two-dimensional semiconductor material channel, the layered phosphorus gallium sulfide dielectric layer and the graphite grid electrode by adopting a dry transfer technology. The obtained transistor shows excellent electrical properties: the current on-off ratio is greater than or equal to 3 * 10 < 8 >, the gate leakage current is less than or equal to 1 * 10 <-13 > A, the subthreshold swing is about 85 mV / dec, and the interface hysteresis voltage is as low as 20 mV. The method is suitable for low-power-consumption and high-performance integrated circuits, logic electronic devices and optoelectronic devices.

This invention belongs to the technical field of sodium-ion energy storage devices, specifically relating to a gallium sulfide / carbon composite anode material, its preparation method, and its application. A Ga2S3 / C composite anode material is synthesized through solvothermal synthesis of a precursor template followed by in-situ high-temperature sulfurization and sintering. This material utilizes nanostructure design and carbon coating to shorten ion transport distances and enhance diffusion kinetics, mitigating volume expansion during energy storage and improving material stability. As a sodium-ion battery anode material, it exhibits excellent rate capability and good cycling stability.

The present invention belongs to the field of semiconductor device technology and relates to a method and application for suppressing the persistent photoconductive effect of gallium oxide. The method comprises: providing a crystalline gallium oxide material and preheating the crystalline gallium oxide material; the preheating temperature is not lower than the melting point of metallic gallium; spreading liquid gallium in air, forming an amorphous gallium oxide film layer on the surface of the spread liquid gallium; while maintaining the liquid gallium in a liquid state, contacting the preheated crystalline gallium oxide material surface with the amorphous gallium oxide film layer on the surface of the liquid gallium, thereby transferring the amorphous gallium oxide film layer to the surface of the crystalline gallium oxide material; and nitriding, phosphatizing, or sulfiding the amorphous gallium oxide film layer on the surface of the crystalline gallium oxide material, thereby converting the amorphous gallium oxide film layer into a gallium nitride film layer, a gallium phosphate film layer, or a gallium sulfide film layer. The method provided by the present invention not only improves material performance but also significantly increases the response speed of the photodetector device.

The invention belongs to the technical field of semiconductor devices, and relates to a method for inhibiting the continuous photoconductive effect of gallium oxide and application. The method comprises the following steps: providing a crystal gallium oxide material, and preheating the crystal gallium oxide material; the preheating temperature is not lower than the melting point of metal gallium; the method comprises the following steps: spreading liquid gallium oxide under an air condition, and forming an amorphous gallium oxide film layer on the surface of the spread liquid gallium oxide; enabling the surface of the preheated crystal gallium oxide material to be in contact with the amorphous gallium oxide film layer on the surface of the liquid gallium oxide under the condition that the liquid gallium oxide is kept in a liquid state, and enabling the amorphous gallium oxide film layer to be transferred to the surface of the crystal gallium oxide material; and nitriding, phosphorylating or vulcanizing the amorphous gallium oxide film layer on the surface of the crystal gallium oxide material, so that the amorphous gallium oxide film layer is converted into a gallium nitride film layer, a gallium phosphate film layer or a gallium sulfide film layer. According to the method provided by the invention, the response speed of a photoelectric detector is greatly improved while the material performance is improved.

This invention proposes a narrow-emission ultraviolet gallium sulfide quantum dot material and its synthesis method, belonging to the field of semiconductor quantum dot material technology. The method employs a one-pot synthesis strategy and introduces a specific passivating agent into the reaction system. By precisely controlling the reaction conditions and the amount of passivating agent, high-purity ultraviolet-emitting gallium sulfide quantum dots with an emission peak at 392 nm and a half-maximum width at half-maximum (HWHM) of 34 nm were successfully prepared. This synthesis method significantly reduces the HWHM of gallium sulfide quantum dots and improves their spectral purity. This invention provides an effective method for preparing ultraviolet environmentally friendly quantum dots with high color purity, demonstrating great application potential in cutting-edge fields such as lighting and full-color displays.

This application provides a solar cell and its fabrication method, belonging to the field of solar cell technology. The solar cell includes: a substrate; a Mo back electrode located on the substrate; and a copper indium gallium selenide (CIGS) thin film or a copper indium gallium sulfide (CIGS) thin film located on the surface of the CIGS back electrode away from the substrate. The CIGS thin film or CIGS thin film includes a first surface and a second surface opposite to each other. The first surface of the CIGS thin film or CIGS thin film is close to the Mo back electrode, and the second surface of the CIGS thin film or CIGS thin film is away from the Mo back electrode. On the first surface of the CIGS thin film or CIGS thin film, the ratio of the gallium concentration to the sum of the indium and gallium concentrations is A; on the second surface of the CIGS thin film or CIGS thin film, the ratio of the gallium concentration to the sum of the indium and gallium concentrations is B, where A > B.

The present invention provides a sodium-ion battery negative electrode material, a preparation method and application thereof, and relates to the technical field of sodium-ion batteries. Specifically, the sodium-ion battery negative electrode material includes a conductive agent, gallium sulfide and nickel sulfide; the conductive agent includes at least one of graphene oxide, carbon nanotubes or MXene. The present invention provides a sodium-ion negative electrode material composed of a conductive agent and two specific metal sulfides, which has good performance in the low-temperature application field of high-capacity power batteries; the sodium-ion battery prepared based on this negative electrode material has good performance in low-temperature rate performance and low-temperature capacity retention, and can improve its reversible capacity at the same time. It still has excellent stability and good fast charging and discharging capabilities during the charge and discharge cycle, and has good application prospects.

The invention discloses a gallium sulfide / indium zinc sulfide composite photocatalytic material which is composed of an indium zinc sulfide-based catalytic material and gallium sulfide on the surface of the indium zinc sulfide-based catalytic material. The invention also discloses a preparation method of the gallium sulfide / indium zinc sulfide composite photocatalyst material, which specifically comprises the following steps: dissolving ZnCl2, InCl3. 4H2O and TAA in water and ethylene glycol, adding citric acid, uniformly mixing, then adding gallium sulfide, reacting, centrifuging, washing and drying in vacuum to obtain the gallium sulfide / indium zinc sulfide composite photocatalyst material. The gallium sulfide / indium zinc sulfide composite photocatalytic material can be used in photocatalytic reduction of carbon dioxide. The gallium sulfide / indium zinc sulfide composite photocatalytic material prepared by the method provided by the invention has the advantages of no agglomeration, wide visible light response range, obviously improved photocatalytic activity compared with pure indium zinc sulfide, good reusability, simple preparation process, mild conditions, good controllability and convenience in operation.

The application provides a compound zinc mercury gallium selenium and a far-infrared nonlinear optical crystal of zinc mercury gallium selenium, a preparation method and an application, the compound has a chemical formula of Zn 0.8 Hg 0.2 Ga2Se4, a molecular weight of 547.71, the crystal has a chemical formula of Zn 0.8 Hg 0.2 Ga2Se4, a molecular weight of 547.71, is a tetragonal crystal, and a space group is a non-central symmetry space group I -4, cell parameters are a=5.5627(6)Å, b=5.5627(6)Å, c=10.881(2)Å, alpha=beta=gamma=90°, Z=2, and a unit cell volume V=336.69(8)Å 3 ; a powder pure sample and a single crystal are prepared by a solid phase reaction under vacuum conditions; the pure sample XRD graph of the zinc mercury gallium selenium infrared nonlinear optical crystal in the application is consistent with a theoretical value; the crystal band gap is 2.3 eV, and the ultraviolet cutoff edge is 489 nm, which are measured by using ultraviolet-visible diffuse reflection spectroscopy; under laser irradiation at 2090 nm, the Zn 0.8 Hg 0.2 Ga2Se4 with a particle size of 0.105-0.15 microns has a frequency doubling effect which is 4 times that of commercialized silver gallium sulfide (AgGaS2).