4 results about "Gallium sulfide" patented technology

The invention discloses a high-performance two-dimensional transistor and a preparation method and application thereof, and relates to the technical field of semiconductor material manufacturing, and the structure of the transistor comprises a channel layer, a gate dielectric layer and an electrode assembly. Wherein the channel layer is made of a two-dimensional semiconductor material; the gate dielectric layer is made of a layered phosphorus gallium sulfide material; the electrode assembly comprises a grid electrode, a source electrode and a drain electrode; the channel layer and the gate dielectric layer are combined through Van der Waals force. The preparation method comprises the following steps: obtaining a two-dimensional material sheet through mechanical stripping, and sequentially stacking the two-dimensional semiconductor material channel, the layered phosphorus gallium sulfide dielectric layer and the graphite grid electrode by adopting a dry transfer technology. The obtained transistor shows excellent electrical properties: the current on-off ratio is greater than or equal to 3 * 10 < 8 >, the gate leakage current is less than or equal to 1 * 10 <-13 > A, the subthreshold swing is about 85 mV / dec, and the interface hysteresis voltage is as low as 20 mV. The method is suitable for low-power-consumption and high-performance integrated circuits, logic electronic devices and optoelectronic devices.

This invention proposes a narrow-emission ultraviolet gallium sulfide quantum dot material and its synthesis method, belonging to the field of semiconductor quantum dot material technology. The method employs a one-pot synthesis strategy and introduces a specific passivating agent into the reaction system. By precisely controlling the reaction conditions and the amount of passivating agent, high-purity ultraviolet-emitting gallium sulfide quantum dots with an emission peak at 392 nm and a half-maximum width at half-maximum (HWHM) of 34 nm were successfully prepared. This synthesis method significantly reduces the HWHM of gallium sulfide quantum dots and improves their spectral purity. This invention provides an effective method for preparing ultraviolet environmentally friendly quantum dots with high color purity, demonstrating great application potential in cutting-edge fields such as lighting and full-color displays.

This application provides a solar cell and its fabrication method, belonging to the field of solar cell technology. The solar cell includes: a substrate; a Mo back electrode located on the substrate; and a copper indium gallium selenide (CIGS) thin film or a copper indium gallium sulfide (CIGS) thin film located on the surface of the CIGS back electrode away from the substrate. The CIGS thin film or CIGS thin film includes a first surface and a second surface opposite to each other. The first surface of the CIGS thin film or CIGS thin film is close to the Mo back electrode, and the second surface of the CIGS thin film or CIGS thin film is away from the Mo back electrode. On the first surface of the CIGS thin film or CIGS thin film, the ratio of the gallium concentration to the sum of the indium and gallium concentrations is A; on the second surface of the CIGS thin film or CIGS thin film, the ratio of the gallium concentration to the sum of the indium and gallium concentrations is B, where A > B.

The application provides a compound zinc mercury gallium selenium and a far-infrared nonlinear optical crystal of zinc mercury gallium selenium, a preparation method and an application, the compound has a chemical formula of Zn 0.8 Hg 0.2 Ga2Se4, a molecular weight of 547.71, the crystal has a chemical formula of Zn 0.8 Hg 0.2 Ga2Se4, a molecular weight of 547.71, is a tetragonal crystal, and a space group is a non-central symmetry space group I -4, cell parameters are a=5.5627(6)Å, b=5.5627(6)Å, c=10.881(2)Å, alpha=beta=gamma=90°, Z=2, and a unit cell volume V=336.69(8)Å 3 ; a powder pure sample and a single crystal are prepared by a solid phase reaction under vacuum conditions; the pure sample XRD graph of the zinc mercury gallium selenium infrared nonlinear optical crystal in the application is consistent with a theoretical value; the crystal band gap is 2.3 eV, and the ultraviolet cutoff edge is 489 nm, which are measured by using ultraviolet-visible diffuse reflection spectroscopy; under laser irradiation at 2090 nm, the Zn 0.8 Hg 0.2 Ga2Se4 with a particle size of 0.105-0.15 microns has a frequency doubling effect which is 4 times that of commercialized silver gallium sulfide (AgGaS2).