Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof

A nonlinear optics, gallium sulfide technology, applied in nonlinear optics, crystal growth, single crystal growth and other directions, can solve the problems of small bandwidth and laser damage of semiconductor materials, achieve good mechanical properties, not easy to break and deliquescence, hardness big effect

Active Publication Date: 2012-03-21
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The semiconductor material has a small bandwidth, although the nonline

Method used

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  • Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof
  • Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof
  • Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Synthesis of Compound BaGa by High Temperature Solid State Reaction 2 GeS 6

[0034] Raw materials used: BaS analytically pure AR 0.0687 g (0.0005 mol)

[0035]Ga spectrum pure SP 0.0697g (0.001mol)

[0036] Ge spectrum pure SP 0.0363g (0.0005mol)

[0037] S Analytical pure AR 0.08017g (0.0025mol)

[0038] Its chemical reaction equation is:

[0039] BaS+ 2Ga+Ge+ 5S = BaGa 2 GeS 6

[0040] The specific operation steps are as follows: after weighing the above raw materials according to the above dosage, put them into a mortar, mix them evenly and grind them carefully, then put them into a graphite crucible of Φ12×40mm, press it tightly with a medicine spoon and put it into a quartz ampoule After 4-6 hours of vacuuming, when the internal pressure of the quartz ampoule is about 0.1Pa, seal the tube with an oxyhydrogen flame and place it in a muffle furnace to slowly raise the temperature to 300°C and heat it at a constant temperature for 5 hours, then raise the ...

Embodiment 2

[0041] Embodiment 2 uses high temperature solid state reaction to synthesize compound BaGa 2 GeS 6

[0042] Raw materials used: BaS analytically pure AR 0.1374g (0.001mol)

[0043] Ga 2 S 3 Analytical pure AR 0.413g (0.001mol)

[0044] GeS 2 Analytical pure AR 0.1367g (0.001mol)

[0045] Its chemical reaction equation is:

[0046] BaS+Ga 2 S 3 + GeS 2 = BaGa 2 GeS 6

[0047] The specific operation steps are as follows: after weighing the above raw materials according to the above dosage, put them into a mortar, mix them evenly and grind them carefully, then put them into a graphite crucible of Φ12×40mm, press it tightly with a medicine spoon and put it into a quartz ampoule After 4-6 hours of vacuuming, when the internal pressure of the quartz ampoule is about 0.1 Pa, seal the tube with an oxyhydrogen flame and place it in a muffle furnace to slowly raise the temperature to 500°C and heat it at a constant temperature for 20 hours, then ra...

Embodiment 3

[0048] Example 3 Growth of crystalline BaGa by high temperature melt slow cooling method 2 GeS 6

[0049] The crystal growth device is a self-made resistance wire heating furnace, and the temperature control device is a 908PHK20 programmable automatic temperature controller.

[0050] Raw materials used: BaS analytically pure AR 0.687 g (0.005 mol)

[0051] Ga spectrum pure SP 0.697g (0.01mol)

[0052] Ge spectrum pure SP 0.363g (0.005mol)

[0053] S Analytical pure AR 0.8017g (0.025mol)

[0054] The specific operation steps are as follows: after weighing the above raw materials according to the above dosage, mix them evenly, then put them into a Φ12×60 mm graphite crucible, press it tightly with a medicine spoon, put it into a quartz ampoule, and wait for 4-6 hours After vacuuming, when the internal pressure of the quartz ampoule is about 0.1 Pa, seal the tube with an oxyhydrogen flame and place it in a muffle furnace to slowly raise the temperature to 300°C and h...

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Abstract

The invention provides novel non-linear optical crystal gallium germanium barium sulfide, and a growing method and application thereof. The chemical formula is BaGa2GeS6 (short for BGGS). The novel non-linear optical crystal gallium germanium barium sulfide has the chemical formula of BaGa2GeS6, has an asymmetrical center structure and belongs to a trigonal crystal system, wherein the space group is R3; and cell parameters are that: a=9.5967(5) Angstrom, b=9.5967(5) Angstrom, c=8.6712(7) Angstrom, alpha=90 degrees, beta=90 degrees, gamma=120 degrees, Z=1, and V=691.62 Angstrom3. The clock multiplier factor of the BaGa2GeS6 is 0.8 time that of AgGaS2. The BGGS compound is obtained by sintering at high temperature through a solid phase synthesis method. The BGGS monocrystal can grow successfully by a crucible descending method. The BaGa2GeS6 has a non-linear optical effect, is not dissolved in dilute acid, has high chemical stability, can be widely applied in various non-linear optical fields, and can develop non-linear optical application of a middle infrared band.

Description

[0001] technical field [0002] The present invention relates to a novel optoelectronic functional material and its growth method and application, in particular to a nonlinear optical crystal material and its preparation method and application, i.e. barium gallium germanium sulfide, whose chemical formula is BaGa 2 GeS 6 , referred to as BGGS. Background technique [0003] The nonlinear optical effect of crystal refers to such an effect: when a laser beam with a certain polarization direction passes through a nonlinear optical crystal (such as BGGS) in a certain incident direction, the frequency of the beam changes. [0004] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, optical parametric oscillation and optical parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetr...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B11/00G02F1/355
Inventor 叶宁林新松
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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