9 results about "Quartz ampoule" patented technology

The invention discloses a cesium iodide nanocrystalline composite chalcogenide glass ceramic and a preparation method thereof, the chemical formula of the cesium iodide nanocrystalline composite chalcogenide glass ceramic is xGa2S3-ySnS2-(1-x-y) CsI, x is more than or equal to 0.2 and less than or equal to 0.3, and y is more than or equal to 0.2 and less than or equal to 0.6; the preparation method comprises the following steps: preparing a glass mixture according to a chemical formula by taking simple substances Ga, Sn and S and a compound CsI as raw materials; placing the glass mixture in a sealed vacuum quartz ampoule, carrying out melt firing at 850-900 DEG C for more than 12 hours, taking out the glass mixture at 650-700 DEG C, and quenching to form glass; carrying out annealing treatment on the formed glass at 250-290 DEG C / min for 4-6 hours, and then cooling to room temperature at a rate of 0.05-0.2 DEG C / min; and carrying out heat treatment on the obtained matrix glass at 350-390 DEG C for 5-20 hours, and then carrying out furnace cooling to room temperature. The chalcogenide glass ceramic contains uniformly distributed CsI nanocrystals, has good thermal and chemical stability and mechanical strength, and can be used in the technical fields of X-ray detection and infrared thermal imaging.

This utility model relates to inorganic synthesis and materials science, specifically to the production of FeS2 pyrite with trace impurities of Au, Ag, Te, and Cu for subsequent use as a reference sample in laser ablation-inductively coupled plasma mass spectrometry (LA-ICPMS). The technical result achieved is a pyrite-based material with homogeneously distributed trace impurities of Au, Ag, Te, and Cu. The sample is obtained in the following manner, with all annealing processes carried out in quartz ampoules sealed under vacuum: 1) pyrite synthesis by annealing precursors in the form of elemental substances Fe and S in stoichiometric ratios at 700°C; 2) mechanical homogenization of the matrix with trace elements in chalcogenide form in a planetary ball mill with a drum and balls made of zirconium oxide for 60 minutes with the addition of hexane; 3) pressing and annealing the resulting powder at 600°C for 12 hours. The proposed utility model enables the production of high-quality pyrite-based materials with trace amounts of Au, Ag, Te, and Cu, which can subsequently be used as reference samples in LA-ICP-MS.

The invention discloses a method for removing natural radioactive isotope 138La in lanthanum oxide powder by using neutron irradiation. The method comprises the following steps: firstly, according to a neutron capture cross section curve of 138La in an ENDF / B-VIII.1 nuclear evaluation database, determining the optimal neutron energy as 3 eV; lanthanum oxide powder is packaged in a high-purity quartz ampoule which is placed in a neutron irradiation channel of a reactor. Most neutrons are moderated into epithermal neutrons with the energy of 3 eV by a heavy water layer of the reactor, and then the epithermal neutrons are emitted into lanthanum oxide powder. The neutron capture efficiency of the 138La in the irradiation process is obtained according to a Monte Carlo simulation method, the irradiation time required for completely converting the 138La into the 139La can be calculated by combining neutron flux data of a reactor, the mass of lanthanum oxide powder and the abundance ratio of the 138La, and the yield of the by-product 140Ce is evaluated. After irradiation is finished, standing and cooling are conducted for a period of time, the lanthanum oxide powder is placed in a low-background lead chamber, the residual radioactivity level of the lanthanum oxide powder is evaluated through a high-purity germanium detector, and the removal effect of 138La in the lanthanum oxide powder can be determined.

The weighing funnel comprises a funnel body and a sealing plug, the hopper body comprises an inverted circular truncated cone cylinder and a lower vertical cylinder, the lower vertical cylinder vertically extends downwards from the lower end of the inverted circular truncated cone cylinder, and an inner cavity of the lower vertical cylinder is communicated with a cavity body of the inverted circular truncated cone cylinder; the sealing plug is provided with an inverted circular truncated cone part and a plurality of straight rods, the straight rods vertically extend downwards from the lower horizontal end face of the inverted circular truncated cone part, the straight rods are spaced from one another in the circumferential direction to form a plurality of gaps, and the gaps are set to be larger than the maximum particle size of the particle raw materials; when the sealing plug is mounted in the hopper body, the inverted circular truncated cone part is in sealing fit with the inner wall of the inverted circular truncated cone cylinder so that particle raw materials can be placed in the inverted circular truncated cone cylinder, and the straight rods are inserted into the lower vertical cylinder; when the weighing funnel is installed on a quartz ampoule bottle with a thin bottle opening, the thin bottle opening is sleeved with the lower vertical cylinder, the multiple straight rods are pushed upwards by the upper end face of the thin bottle opening, and particle raw materials enter an inner cavity of the lower vertical cylinder through a gap between the inverted circular truncated cone part and the inner wall of the circular truncated cone cylinder and gaps of the multiple straight rods and then enter the thin bottle opening.

The invention relates to a phosphorus-silicon-indium-barium infrared nonlinear optical crystal material as well as a preparation method and application thereof. The chemical formula of the crystal is BaIn2Si7P12, the molecular weight is 746.92, the crystal is crystallized in a trigonal system, the space group is R3, and the cell parameters are as follows: a = b = 13.2045 (6), and c = 8.9694 (7). Gamma is equal to 120 degrees, and V is equal to 1354.37 (16) 3. Phosphorus-silicon-indium-barium is a black crystal with a non-centrosymmetric structure, and takes [SiP4], [Si2 / 3In1 / 3P4] tetrahedrons and [BaP12] polyhedrons as basic structural elements. Phosphorus silicon indium barium synthesized in a closed vacuum quartz ampoule by adopting a high-temperature solid-phase synthesis method has excellent infrared nonlinear optical performance, the laser damage threshold is 8 times of that of AgGaS2 (AGS), the frequency-doubled effect is 1.1 times of that of a commercial material ZnGeP2 (ZGP), and the phosphorus silicon indium barium has important application value in a medium-wave infrared laser system.

The invention discloses a method for synthesizing lead iodide, which comprises the following steps: S1, synthesizing a high-purity PbI2 polycrystalline raw material by dynamic equilibrium chemical vapor transport, sublimating a high-purity iodine simple substance positioned in a first temperature zone at 100-110 DEG C to generate iodine vapor in a double-temperature zone quartz ampoule which is vacuumized to high vacuum and sealed, and continuously transporting the iodine vapor to a second temperature zone, carrying out a gas-liquid interface reaction with high-purity lead molten at 410-420 DEG C; by accurately controlling the temperatures of the two temperature zones, cooling and separating after the reaction is finished to obtain a PbI2 polycrystal raw material with an accurate stoichiometric ratio; s2, growing an internal iodine pressure compensation crystal; and S3, crystal post-treatment. Through double-temperature-zone dynamic equilibrium gas phase transportation, the iodine vapor generation rate and the interface reaction consumption rate are balanced, it is ensured that the stoichiometric ratio of the PbI2 product is highly close to a theoretical value (Pb: I = 1: 2), high-quality raw materials are provided for high-quality single crystal growth from the source, the raw material yield is high, and repeatability is good.

The application discloses an indium phosphide polycrystal growth furnace and relates to the technical field of indium phosphide polycrystal growth. The application adopts a dynamic heat bridge blocking mechanism composed of a double-layer sleeve and a flowable heat transfer medium, when normally growing, the double-layer sleeve is filled with high-thermal-conductivity medium to fill physical gaps, so that heat can be efficiently penetrated and transmitted to a quartz ampoule, when critical working conditions such as out-of-control pressure or temperature in the furnace are sensed, an inductive mechanism triggers a blocking action to rapidly empty the medium in the double-layer sleeve, so that the inside of the double-layer sleeve is instantly restored to a hollow gas or vacuum heat insulation layer, the thermal resistance is greatly increased, the heat transmission from the lower heating unit to the quartz ampoule is instantaneously cut off, and the problem of out-of-control heating of the bottom reaction zone is avoided.

The invention discloses a gallium antimonide polycrystal synthesis method and device, and relates to the technical field of semiconductor material synthesis. According to the method, the second open container is arranged in the quartz ampoule tube, high-purity antimony is filled in the second open container to serve as an antimony compensation source, and the second open container and the first open container serving as a main reaction container are arranged at an interval; the method comprises the following steps: firstly, heating an antimony compensation source to create a controllable antimony-rich gas phase environment in a closed quartz ampoule tube, then heating high-purity gallium and high-purity antimony in a first open container to a liquid state, carrying out an exothermic synthesis reaction on molten gallium and antimony to generate gallium antimonide, and in the reaction process of generating the gallium antimonide, carrying out an exothermic synthesis reaction on the high-purity gallium and the high-purity antimony to generate the gallium antimonide. The antimony-rich gas phase environment can effectively inhibit and compensate volatilization loss of antimony, and the unbalance of the stoichiometric ratio of gallium antimonide is avoided; the synthesis method of the gallium antimonide polycrystal is low in energy consumption, high in raw material utilization rate and accurate in stoichiometric ratio of the product.

The application discloses a strong-textured N-type bismuth telluride material regulated by configuration entropy and a preparation method thereof, and belongs to the technical field of thermoelectric materials. 1‑x (Sb2Se2S) x +y at.% BiBr3, wherein x=0.05-0.20 and y=0.18-0.24; the method comprises the following steps: firstly, weighing and mixing; secondly, introducing the mixed powder into a quartz ampoule and vacuum sealing; and thirdly, increasing temperature, keeping temperature and decreasing temperature.The application is used for regulating the strong-textured N-type bismuth telluride material induced by configuration entropy and preparing the same.