149 results about "Bismuth telluride" patented technology

The invention relates to the technical field of infrared sensors, in particular to a monolithic integrated MEMS out-of-plane thermopile chip and a preparation method thereof, and the thermopile chip comprises a substrate, and a bottom electrode, a thermocouple array, a top electrode and an optical radiation absorption layer which are sequentially arranged on the substrate; the thermocouple array is vertically arranged on the bottom electrode; the thermocouple array comprises a plurality of thermocouple pairs, and each thermocouple pair comprises an N-type thermocouple and a P-type thermocouple; the N-type thermocouple and the P-type thermocouple form a current and heat flow loop in an electric series connection and heat parallel connection mode. According to the invention, the bismuth telluride-based thermoelectric material with low thermal conductivity and high Seebeck coefficient difference is used as the thermocouple material of the out-of-plane thermopile chip, the heat conduction path of the out-of-plane thermopile chip is more direct, the temperature difference in the vertical direction can be directly utilized, and the higher response speed and high sensitivity are expected to be realized due to the more efficient thermal gradient.

The invention discloses a bismuth telluride nanopore maskless direct writing preparation method based on electron beam irradiation, and belongs to the technical field of nanometer manufacturing. The method comprises the following steps: firstly, constructing an initial nanopore in a two-dimensional bismuth telluride material by utilizing a converged electron beam; and then the aperture size of the nanopore is accurately regulated and controlled by adjusting the beam density of the electron beam. The method effectively solves the key technical bottlenecks of interface chemical residue pollution caused by a traditional photoresist mask process, intrinsic defect formation caused by high-energy particle bombardment and the like, and breaks through the limitation of an existing etching technology in the aspect of sub-nanoscale structure precision control; precise control of the aperture of the nanopore can be achieved by adjusting the irradiation intensity of the electron beam, and the method has the advantages of being easy and convenient to operate, low in cost, environmentally friendly and the like and can be widely applied to the fields of nanometer electronic devices, sensors and the like.

The invention discloses a preparation method of a bismuth telluride-based thermoelectric material and an extrusion die. A die groove of the extrusion die comprises an inlet section, a connecting section and an outlet section which are connected in sequence; the connecting section sequentially comprises a plurality of reducing sections from the inlet section to the outlet section; the diameter of the outlet end of any one of the multiple reducing sections is larger than that of the outlet end of the next reducing section. By improving orientation in a traditional hot extrusion process, the bismuth telluride-based thermoelectric material with high mechanical performance and high thermoelectric performance is prepared, and the problems of low mechanical strength, non-uniform deformation and the like in the preparation process of the traditional bismuth telluride-based thermoelectric material are solved.

The invention relates to the technical field of thermoelectric material surface treatment, and provides a bismuth telluride-based thermoelectric material wafer surface treatment method which comprises the following steps: acquiring multi-dimensional data such as current density distribution, temperature field distribution, solution concentration gradient and plating thickness increment in real time through a sensor array; performing iterative calculation on the data based on a thermoelectric performance parameter optimization model to generate an optimal parameter combination of chemical oil removal, activation, nickel plating and tin and bismuth plating processes; dynamically adjusting the anode plate area ratio, the current density threshold value and the solution temperature fluctuation range of the electroplating equipment; a self-adaptive feedback mechanism is used for correcting parameter deviation, so that a uniform thermoelectric function layer structure is formed on the surface of the wafer. According to the method, the uniformity and the thermoelectric performance stability of the surface coating of the bismuth telluride thermoelectric wafer can be improved, the defect rate is reduced, and the production efficiency and the product consistency are improved.

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric thin film. The preparation method comprises the following steps: obtaining a bismuth raw material, a tellurium raw material and a selenium raw material; the preparation method comprises the following steps: smelting, grinding and sintering a bismuth raw material, a tellurium raw material and a selenium raw material to obtain an N-type bismuth-tellurium-selenium-based block target material; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through magnetron sputtering equipment, so that a bismuth-tellurium-selenium-based thin film is obtained; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through high-vacuum thermal evaporation equipment, so that a homogeneous-layer bismuth-tellurium-selenium-based thin film is obtained; according to the preparation method, the homogeneous layer bismuth-tellurium-selenium-based thin film is subjected to annealing treatment to obtain the N-type bismuth telluride-based thermoelectric thin film, and due to the fact that the method for preparing the bismuth-tellurium-selenium-based thin film through magnetron sputtering equipment and the method for preparing the bismuth-tellurium-selenium-based thin film through high-vacuum thermal evaporation equipment are combined, the high-performance N-type bismuth telluride-based thermoelectric thin film is obtained.

Disclosed in the present disclosure are a P-type bismuth telluride-based material and a method for preparing the P-type bismuth telluride-based material. The P-type bismuth telluride-based material is doped with a rare earth element, and prepared from a rare earth material, a Sb source, a Te source and a Bi source by melting, ball milling and sintering. An outer layer atomic orbital of the rare earth element can greatly improve the energy band structure of a matrix phase. At the same time, a large atomic difference between a rare earth atom and a Sb atom is utilized to provide a mass potential field, enhancing the phonon scattering probability, and reducing lattice thermal conductivity, and the double action of the rare earth element synergistically enhances the thermoelectric performance of the P-type bismuth telluride-based material.

The invention relates to the technical field of thermoelectric material performance testing, and provides a method and equipment for measuring performance characterization parameters of a bismuth telluride-based thermoelectric material.The method comprises the steps that firstly, statistical analysis is conducted on geometrical parameters of a material sample, and the distribution proportion of different geometrical shapes is determined; then selecting test samples from the material database to construct a test sample set, and ensuring that the distribution proportion of different geometric forms in the sample set is consistent with a statistical analysis result; and generating a thermoelectric parameter measurement instruction based on the test sample set, carrying out performance test on the material by using the instruction, and collecting data through the test process to finally obtain the performance parameter data of the bismuth telluride-based thermoelectric material. According to the invention, the accuracy, stability and test efficiency of performance parameter measurement of the bismuth telluride-based thermoelectric material can be improved.

The invention relates to the technical field of semiconductor material thermoelectric performance testing, in particular to a bismuth telluride sheet material Seebeck coefficient measuring device. The device mainly comprises a flexible measuring device and a data acquisition system, the data acquisition system is provided with a universal meter and a programmable power supply, the flexible measuring device is connected to the input end of the universal meter through a signal cable to transmit temperature and pressure signals of a thermocouple, and the flexible measuring device is connected to the output end of the programmable power supply through a power supply cable to transmit the temperature and pressure signals of the thermocouple. And the universal meter and the programmable power supply are respectively connected to the computer through communication cables and are connected with the computer to realize data processing. Through the three-in-one design of flexible contact, synchronous sensing and temperature difference control, accurate measurement of the Seebeck coefficient is realized. Through actual measurement, the temperature control precision of the device is + / -0.1 DEG C, the voltage acquisition resolution is 0.1 mu V, and the Seebeck coefficient measurement error is less than 2%.

The invention discloses a preparation method of a Bi2Te3-based thermoelectric material powder metallurgy precursor, which comprises the following steps of: performing hydrogen reduction on a thin strip sample or powder prepared from a zone melting bar of a bismuth telluride-based thermoelectric material at the temperature of 350-400 DEG C to obtain the Bi2Te3-based thermoelectric material powder metallurgy precursor. The Bi2Te3-based thermoelectric material powder metallurgy precursor can be used for preparing a bismuth telluride-based thermoelectric material for eliminating a donor-like effect through a powder metallurgy method. According to the method, powder can be prepared in the air, the donor-like effect generated in the powder preparation process can be eliminated through hydrogen reduction, the process of grinding and powder preparation in a protective atmosphere is avoided, the donor-like effect is eliminated at a lower temperature in a shorter time, the production process of the material can be simplified, the production cost can be saved, and the method is suitable for industrial production. And the optimal carrier concentration can be maintained while grains of the material are refined, and the optimal Seebeck coefficient is obtained.

The application discloses an n-type bismuth telluride-based thermoelectric element NiFeP alloy interface barrier layer and a preparation method thereof, and belongs to the technical field of thermoelectric materials and devices. The barrier layer in the application is an electroplated NiFeP ternary plating layer, the content of Fe is 15-20 wt%, the content of P is 2-4 wt%, the balance is Ni, the thickness is 5-10 microns, and the barrier layer is prepared through substrate pretreatment, electroplating solution preparation, electroplating deposition and post-treatment. The application also constructs a thermoelectric element containing the barrier layer, and the n-type bismuth telluride thermoelectric material layer is connected by a NiFeP alloy interface barrier layer, a SAC305 solder layer and a copper electrode layer in sequence. The barrier layer has excellent diffusion inhibition effect, the interface bonding strength is greater than 16 MPa and the contact resistivity is less than 8 mu omega cm after aging at 200 DEG C for 144 hours. 2 The preparation process is simple, the cost is relatively low, large-scale production is suitable, and the barrier layer is expected to play an important role in the application field of thermoelectric materials and devices.

The invention provides a preparation method of a bismuth telluride-based thermoelectric thin film material, and aims to overcome the defect that most of existing bismuth telluride system materials exist in a rigid form and the application of the bismuth telluride system materials in the emerging fields of wearable equipment, flexible electronic devices and the like is limited. The bismuth telluride material is flexible, the limitation of a traditional thermoelectric material in an application scene is broken through, an innovative thermoelectric management solution is provided for flexible electronic products, and the bismuth telluride material has certain commercial and technical values.

The invention discloses a self-energy-supply dustproof lamp for a traffic tunnel and a using method thereof, and relates to the field of lamps, and the key points of the technical scheme are that the self-energy-supply dustproof lamp comprises a self-energy-supply device which is installed at the top end of the lamp and comprises a vibration power generation unit, a temperature difference power generation unit, an energy storage unit and a charging and discharging management unit, the vibration power generation unit is of a combined structure of a piezoelectric ceramic power generation assembly and a spring oscillator, the temperature difference power generation unit is of a combined structure of a bismuth telluride temperature difference power generation piece and a cooling fin, the energy storage unit is a lithium iron phosphate battery, and the charging and discharging management unit integrates an MPPT chip and a protection circuit. The beneficial effects are that the electric energy generated by the two power generation units is transmitted to the charging and discharging management unit, the integrated MPPT chip realizes maximum power point tracking, the electric energy is efficiently adjusted and stored in the energy storage unit formed by the lithium iron phosphate battery, and then the energy storage unit stably supplies power to the lamp. The system can be better adapted to the underground closed / semi-closed traffic tunnel environment with extremely poor illumination conditions.

The invention discloses a front exhaust gradient waste heat power generation system of a new energy hybrid electric vehicle, and relates to the technical field of automobile energy conservation. The system comprises a gradient thermoelectric conversion module, a composite heat dissipation module, an intelligent energy management module and an elastic fixing and sealing module which are arranged in the axial direction of a front exhaust pipe. The gradient thermoelectric module adopts a lead telluride / bismuth telluride dual-material design and is respectively matched with a front exhaust high-temperature area and a front exhaust medium-temperature area; the composite heat dissipation system combines liquid cooling and air cooling to realize temperature difference stable control; the intelligent energy management module is linked with a whole vehicle system through a CAN bus and dynamically distributes electric energy; the elastic fixing mechanism solves the problems of vibration and sealing. The comprehensive conversion efficiency reaches 8%-12%, the fuel economy of the whole vehicle can be improved by 4%-6%, the system is suitable for the frequent start-stop working condition of the hybrid electric vehicle, installation and maintenance are convenient and fast, and the remarkable energy-saving effect and industrialization value are achieved.

The utility model relates to the technical field of CPUs, and discloses a dustproof CPU cooling fan which comprises a cooling shell, the inner bottom wall of the cooling shell is slidably connected with a fixing frame, the inner wall of the fixing frame is fixedly connected with a plurality of graphene cooling fins, the left side of the fixing frame is fixedly connected with a bismuth telluride module, and the right side of the fixing frame is fixedly connected with a plurality of graphene cooling fins. The left side of the bismuth telluride module is fixedly connected with a paraffin plate, the left side of the paraffin plate and the right side of the fixing frame are fixedly connected with the same bidirectional pulsating heat pipe, the rear side of the inner bottom wall of the heat dissipation shell is fixedly connected with a fixing frame, and the top of the fixing frame is fixedly connected with a first servo motor. According to the utility model, the heat of the CPU is transmitted through the paraffin plate, the heat is conducted to the graphene cooling fin through the bidirectional pulsating heat pipe, the first servo motor drives the cooling fan to accelerate the dissipation of the heat on the graphene cooling fin, and meanwhile, part of the heat transmitted by the paraffin plate is converted into electric power through the thermoelectric module and is stored in the storage battery for later use.

This invention discloses a method for separating bismuth from waste bismuth telluride thermoelectric materials, belonging to the field of separation and purification technology. The method utilizes a macroporous, weakly basic styrene-based anion exchange resin containing tertiary amines to adsorb bismuth, followed by stepwise elution of the adsorbed resin with an eluent to separate bismuth from the bismuth telluride leachate, yielding a high-concentration bismuth-containing solution. The method disclosed in this invention features high selectivity, mild reaction conditions, simple operation, good recycling performance, and minimal environmental pollution. It can solve the environmental hazards caused by the accumulation of waste bismuth telluride thermoelectric materials and also realize the recycling of scarce metal resources such as bismuth, antimony, tellurium, and selenium, alleviating resource scarcity.

The invention discloses a two-dimensional bismuth compound / gallium arsenide heterojunction, a preparation method thereof and application of the two-dimensional bismuth compound / gallium arsenide heterojunction in a photoelectric detector, and belongs to the field of semiconductor devices. Two-dimensional bismuth compounds (bismuth selenide or bismuth telluride) are prepared on a cleaned and pre-masked gallium arsenide substrate through an electron beam evaporation method, the two-dimensional bismuth compound / gallium arsenide heterojunction is formed, and the thickness of a two-dimensional bismuth compound film is controllable. And preparing a symmetric or asymmetric electrode by electron beam evaporation to obtain a prototype device of the photoelectric detector. The preparation process is simple, the repeatability is good, the detector can achieve the high detection rate (up to-1014 Jones) of optical signals from the ultraviolet band to the near-infrared band (367-1064 nm) under the room temperature condition and without bias voltage, and meanwhile the excellent cycling stability and air stability are achieved.

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

This invention belongs to the field of thermoelectric semiconductor materials technology, and relates to a bismuth telluride-based thermoelectric material, its preparation method, and its application. This invention obtains Bii through processes such as melt tumbling, zone melting, crushing and pressing, and hot extrusion molding. 0.48 Sb 1.52 Te3+3 wt%Te+ x wt% Cu₂Se, 0≤x≤0.1, has a room temperature carrier concentration of (3.1~5.5)×10⁻⁶. 19 cm ‑3 Electrical conductivity at room temperature is 770~1553 S / cm; thermal conductivity is 0.96~0.97 W / m². ‑1 K ‑1 μ W / k l The value is 0.15 m 3 KV ‑1 s ‑1 W ‑1 Thermoelectric figure of merit zT Not less than 1.0 (300~400 K). Specifically, it is produced by combining hot extrusion with Cu2Se doping. The hot extrusion process is used to optimize the grain orientation, form a dense microstructure, and reduce the thermal resistance of grain boundaries. It is suitable for industrial waste heat recovery and micro-refrigeration devices.

The vertical hot extrusion high-vacuum system for the bismuth telluride thermoelectric material comprises a vertical vacuum cavity body, four supporting lugs used for fixing an extrusion die are arranged on the inner side of the bottom wall of the vacuum cavity body, the supporting lugs are evenly arranged on the same circumference at intervals with a discharging opening as the circle center, grooves are formed in the inner sides of the supporting lugs, and the supporting lugs are arranged in the grooves. The extrusion die is cylindrical, and convex lugs matched with the grooves in the supporting lugs are arranged on the outer side of the bottom of the extrusion die, so that the extrusion die is screwed into the grooves of the supporting lugs through the convex lugs and is detachably fixed to the inner side of the bottom wall of the vacuum cavity body. And a mold supporting lug is designed in the cavity. And the mold can be reliably separated from a product during the return stroke of the main shaft, so that the demolding adhesion problem is effectively solved, the shapes of the mold and the product are protected, the production period is shortened, and the automation degree and reliability of equipment operation are improved.

The invention belongs to the field of material science, and discloses a composite solid electrolyte and a preparation method and application thereof.The preparation method comprises the steps that a Bi2Te3 thermoelectric material is prepared, a polyoxyethylene (PEO) electrolyte solution is prepared, and the composite solid electrolyte is prepared, specifically, the Bi2Te3 thermoelectric material serves as filler and is added into an acetonitrile (ACN) solution; and adding into a PEO electrolyte solution after ultrasonic treatment, stirring at room temperature, casting into a polytetrafluoroethylene mold, drying at room temperature, and performing vacuum drying to obtain the composite solid electrolyte. The composite polymer solid electrolyte prepared by adopting the preparation method has high ionic conductivity and stable lithium deposition stripping performance, meanwhile, the synthesis method is simple, and large-scale industrial production can be carried out.

The invention discloses a calcium-doped bismuth telluride electrode material and a preparation method and application thereof, and belongs to the technical field of battery materials.The preparation method of the calcium-doped bismuth telluride electrode material comprises the following steps that calcium salt, polyvinylpyrrolidone, bismuth salt, TeO2, NaOH and a solvent are mixed, and a mixed solution is obtained; the molar ratio of the calcium salt to the bismuth salt is (1-5): (5-9); and carrying out solvothermal reaction on the mixed solution to obtain the calcium-doped bismuth telluride electrode material. The Ca element with multi-electron redox characteristic and good conductivity is used for doping bismuth telluride, and heterogeneous metal Ca ions are introduced, so that the electronic structure of the material can be optimized, the overall conductivity can be enhanced, severe volume expansion caused in the repeated embedding and removing process of Ca < 2 + > with large radius and high charge density can be effectively inhibited, and the performance of the material is improved. Therefore, the cycling stability and the rate capability of the aqueous calcium ion battery negative electrode material are remarkably improved.

The invention discloses a bismuth telluride-based thermoelectric material high-binding-force barrier layer and a preparation method and application thereof. The preparation method comprises the following steps: S1, providing p-type and n-type bismuth telluride-based thermoelectric material blocks subjected to cutting and surface pretreatment; s2, Fe-based alloy powder serves as a raw material, deposition is conducted on the surfaces of the high-temperature ends of the p-type bismuth telluride-based thermoelectric material block and the n-type bismuth telluride-based thermoelectric material block in a thermal spraying mode, and Fe-based alloy barrier layers are formed; and S3, performing heat treatment on the Fe-based alloy barrier layer, thereby completing preparation of the bismuth telluride-based thermoelectric material high-binding-force barrier layer. The barrier layer breaks through the bottleneck that an existing Ni or other metal barrier layer is prone to failure in the high-temperature service process, and the reliability and the service life of the bismuth telluride-based thermoelectric device are remarkably improved.

The application belongs to the technical field of thermoelectric materials, and particularly relates to a fiber feather-like nanocrystalline bismuth telluride thermoelectric film with high toughness and a preparation method thereof. The application comprises the following steps: (1) using a silicon oxide sheet and a polyimide as a substrate, fixing the substrate to a base plate, and then loading the base plate into a sputtering cavity; (2) fixing a tellurium bismuth alloy target on a direct current power source, fixing a tellurium single target on a radio frequency power source, adjusting the spacing of the tellurium bismuth alloy target, the tellurium single target and the substrate, closing the cabin door, and cleaning the substrate by using an ionization method; (3) after the cleaning is completed, a fiber feather-like nanocrystalline bismuth telluride thermoelectric film with high toughness is grown by using an intermittent sputtering method. The application creatively grows the fiber feather-like nanocrystalline bismuth telluride thermoelectric film with high toughness in one step under the condition of room temperature and fixed working air pressure by adjusting the total sputtering time and the sputtering bias, and can meet the demand of flexible wearable thermoelectric devices, and has potential commercial prospects.

The invention relates to a lithium negative electrode interface layer with micro-area temperature intelligent sensing and ion transmission dynamic regulation and control functions and a preparation method of the lithium negative electrode interface layer, and belongs to the technical field of lithium negative electrodes of secondary batteries. The thickness of the interface layer is 0.5-5 [mu] m, and a three-dimensional interpenetrating network is formed in the temperature-sensitive polymer matrix by two-dimensional bismuth telluride nanosheets; wherein the mass fraction of the two-dimensional bismuth telluride nanosheets is 20-60%, and the two-dimensional bismuth telluride nanosheets have remarkable Seebeck effect and excellent lithium ion conductivity, and can directly convert local temperature gradient into counter potential for inhibiting dendritic crystal growth; and the temperature-sensitive polymer dynamically regulates and controls an ion transmission channel through temperature-sensitive phase change. The invention further provides a preparation method of the interface layer, the intelligent interface layer is constructed on the surface of lithium metal by adopting a solvent evaporation method, self-driven thermal safety management of'sensing-response 'integration is realized, and the safety and the cycling stability of the lithium metal battery are remarkably improved.

This invention belongs to the field of bismuth telluride materials, specifically disclosing an extrusion die and its preparation method, as well as a bismuth telluride crystal rod and its preparation method. This invention uses an extrusion die with a variable diameter curved surface, and then, with the extrusion die lubricated by a lubricant, hot-extrudes a bismuth telluride billet to obtain a bismuth telluride crystal rod. The method of this invention can improve the cracking problem during the hot extrusion of bismuth telluride, reduce damage during the bismuth telluride extrusion process, lower the loss rate of bismuth telluride, and improve the performance and reliability of the bismuth telluride crystal rod.

The invention relates to a GCM / bismuth telluride-based composite thermoelectric material and a preparation method and application thereof, the structural formula of the composite thermoelectric material is shown as Gd (Co < 0.433 > Mn < 0.567 >) < 2 > / Bi < 0.3 > Sb < 1.7 > Te3, and the composite thermoelectric material is obtained by introducing a magnetic second phase GCM (Gd (Co < 0.433 > Mn < 0.567 >) < 2 >) into a bismuth telluride matrix Bi < 0.3 > Sb < 1.7 > Te3. Compared with the prior art, due to the introduction of the magnetic second phase GCM, a generated built-in magnetic field and magnetic scattering, the mobility is reduced, the Seebeck coefficient is increased, due to the diffusion of the GCM, the carrier concentration is increased, the prepared composite thermoelectric material has high electrical performance, meanwhile, due to the introduction of the GCM, phonon scattering is increased, and the performance of the composite thermoelectric material is improved. According to the GCM / bismuth telluride-based composite thermoelectric material, the crystal lattice thermal conductivity of the composite material is effectively reduced, the GCM / bismuth telluride-based composite thermoelectric material has high conductivity, low thermal conductivity and high thermoelectric performance, and the average zT value of the composite material is increased by 39% within the temperature range of 300-500 K. Wide application prospects are realized.

The invention discloses a topological insulator Bi2Te3 nanopore size regulation and control method based on thickness-diameter ratio feedback, and belongs to the field of two-dimensional material nanometer manufacturing. Comprising the following steps: step 1, placing a sample in a transmission electron microscope, and prefabricating nanopores with the diameter of 1-5nm in a bismuth telluride film with the thickness of 2-10nm by utilizing a converged electron beam; step 2, performing irradiation by using an electron beam with 300kV acceleration voltage, wherein the beam density is controlled to be 1.54 * 10 < 5 > A.m <-2 >; 3, feeding back the regulation and control size based on the ratio of the initial aperture of the nanopore to the thickness of the material, and when the thickness-diameter ratio is smaller than 0.5, realizing aperture shrinkage or expansion by adjusting the beam density; and when the thickness-diameter ratio is greater than 0.5, the electron beam irradiation only enables the aperture to be enlarged, and the aperture cannot be shrunk. The method does not need chemical reagents, is green and environment-friendly, can directionally regulate and control the size of the bismuth telluride nanopore, and is suitable for preparing topological quantum devices, nanofiltration membranes and thermoelectric nanostructures.

The invention discloses a preparation method and application of water-based bismuth telluride ink and a preparation method of a Bi2Te3-based thermoelectric material. The preparation method comprises the following steps: step 1, weighing raw materials according to a set chemical formula atomic ratio, carrying out ball milling, grinding, dispersing and screening to obtain raw material powder; step 2, dropwise adding a polyvinylpyrrolidone solution into the methylcellulose solution to obtain a solution A; 3, dropwise adding the solution A into a polyethyleneimine solution, fully mixing, and dropwise adding a solvent to obtain a solution B; and 4, adding the raw material powder in the step 1 into the solution B, and stirring and dispersing to obtain the required ink. The thermoelectric material prepared from the obtained ink has excellent thermoelectric performance.

The invention provides a method for carrying out surface treatment on n-type bismuth telluride. According to the method, anode electrolysis is carried out on n-type bismuth telluride under the action of an electric field of current, in an alkaline NaOH solution, part of Te and Bi in the n-type bismuth telluride are oxidized, an orange glass phase film is generated and attached to the surface of the n-type bismuth telluride, and the film can be cleaned away. According to the anode treatment process, the microstructure and roughness of the surface of the n-type bismuth telluride material can be changed, the preparation of the barrier layer is facilitated, the combination between bismuth telluride and the barrier layer is enhanced, the interface contact resistivity is reduced, and the reliability of a thermoelectric device is improved to a certain extent. According to the invention, the problems of high barrier layer preparation difficulty, poor interface contact, low reliability of the thermoelectric device, complex process flow, poor stability and the like caused by insufficient binding force between the barrier layer and n bismuth telluride in the bismuth telluride-based thermoelectric device can be solved.

The present invention discloses a room-temperature topological insulator heterojunction photodetector with a special dipole antenna. The device preparation steps are as follows: transfer the germanium-bismuth-tellurium grown by chemical vapor deposition onto a high-resistance silicon substrate with a silicon dioxide oxide layer, then use dry transfer to form a heterojunction between bismuth telluride material and germanium tellurium bismuth, and then use ultraviolet lithography technology to fabricate source and drain electrodes, and use processes such as ultraviolet lithography, electron beam evaporation, and lift-off to prepare a topological insulator heterojunction photodetector with a special antenna structure. By using the unique antenna structure, the terahertz field is concentrated on the incident device, realizing the enhancement of the collective plasmon oscillation efficiency and absorption under the control of the sub-wavelength scale photon structure, and greatly improving the sensitivity of the photodetector. The photodetector described above exhibits ultra-high responsivity and a relatively wide response spectrum in the terahertz band. The advantages of the present invention are high detectivity, fast response, wide-spectrum response, low power consumption, and ease of integration.