18 results about "Bismuth telluride" patented technology

The application discloses an n-type bismuth telluride-based thermoelectric element NiFeP alloy interface barrier layer and a preparation method thereof, and belongs to the technical field of thermoelectric materials and devices. The barrier layer in the application is an electroplated NiFeP ternary plating layer, the content of Fe is 15-20 wt%, the content of P is 2-4 wt%, the balance is Ni, the thickness is 5-10 microns, and the barrier layer is prepared through substrate pretreatment, electroplating solution preparation, electroplating deposition and post-treatment. The application also constructs a thermoelectric element containing the barrier layer, and the n-type bismuth telluride thermoelectric material layer is connected by a NiFeP alloy interface barrier layer, a SAC305 solder layer and a copper electrode layer in sequence. The barrier layer has excellent diffusion inhibition effect, the interface bonding strength is greater than 16 MPa and the contact resistivity is less than 8 mu omega cm after aging at 200 DEG C for 144 hours. 2 The preparation process is simple, the cost is relatively low, large-scale production is suitable, and the barrier layer is expected to play an important role in the application field of thermoelectric materials and devices.

This invention discloses a method for separating bismuth from waste bismuth telluride thermoelectric materials, belonging to the field of separation and purification technology. The method utilizes a macroporous, weakly basic styrene-based anion exchange resin containing tertiary amines to adsorb bismuth, followed by stepwise elution of the adsorbed resin with an eluent to separate bismuth from the bismuth telluride leachate, yielding a high-concentration bismuth-containing solution. The method disclosed in this invention features high selectivity, mild reaction conditions, simple operation, good recycling performance, and minimal environmental pollution. It can solve the environmental hazards caused by the accumulation of waste bismuth telluride thermoelectric materials and also realize the recycling of scarce metal resources such as bismuth, antimony, tellurium, and selenium, alleviating resource scarcity.

This invention belongs to the field of bismuth telluride materials, specifically disclosing an extrusion die and its preparation method, as well as a bismuth telluride crystal rod and its preparation method. This invention uses an extrusion die with a variable diameter curved surface, and then, with the extrusion die lubricated by a lubricant, hot-extrudes a bismuth telluride billet to obtain a bismuth telluride crystal rod. The method of this invention can improve the cracking problem during the hot extrusion of bismuth telluride, reduce damage during the bismuth telluride extrusion process, lower the loss rate of bismuth telluride, and improve the performance and reliability of the bismuth telluride crystal rod.

The application discloses a method for improving the metalization connection strength of n-type Bi2Te3-based thermoelectric elements based on anchoring effect, and comprises the following steps: configuring a n-type Bi2Te3-based wafer surface treatment agent, the composition of which comprises 40-50% sulfuric acid (volume), 1-2% nitric acid (volume), and the rest is water; immersing a clean n-type Bi2Te3-based wafer into the surface treatment agent to perform surface etching; then immersing the etched n-type Bi2Te3-based wafer into ultrapure water to perform ultrasonic treatment; performing metalization connection on the ultrasonically treated n-type Bi2Te3-based wafer through electroplating or chemical plating, the plated metal is easy to form anchoring effect with the n-type Bi2Te3, the metalization connection strength is improved; and finally performing scribing and cutting to obtain the Bi2Te3-based thermoelectric elements with high metalization connection strength. The application makes the n-type Bi2Te3-based wafer have high surface roughness before electroplating, which is beneficial to forming anchoring effect with the plated metal such as nickel, so that the Bi2Te3-based thermoelectric elements with high metalization connection strength are obtained, and the thermoelectric elements are not physically damaged, and the product qualification rate can be improved.

The application relates to a preparation method of a barrier layer of a bismuth telluride-based thermoelectric material with low contact resistance, high bonding strength and high thermal stability. The application aims to solve the problem that the existing barrier layer of the bismuth telluride-based thermoelectric material cannot simultaneously realize long-term thermal stability above 200 DEG C and high strength and low resistance. The method comprises the following steps: 1, preparing a Ti / bismuth telluride p-type / Ti test piece; 2, preparing a Ti / bismuth telluride n-type / Ti test piece; and 3, preparing a bismuth telluride power generation device. The application is used for preparing the barrier layer of the bismuth telluride-based thermoelectric material with low contact resistance, high bonding strength and high thermal stability.

An ultra-flexible single crystal bismuth telluride-based thermoelectric thin film device based on anti-site defect regulation and a preparation method thereof belong to the technical field of thermoelectric materials. The present application aims to solve the problem of low yield strength and poor flexibility of single crystal bismuth telluride-based materials. The thin film thermoelectric device comprises a PI film and an N-P thermoelectric thin film from bottom to top; the N-P thermoelectric thin film is formed by a plurality of N-type thermoelectric thin film legs and a plurality of P-type thermoelectric thin film legs which are alternately connected by metal foils; the N-type thermoelectric thin film leg is composed of silver paste, gallium-indium alloy, metal coating and Bi2Te 3‑x A x thermoelectric thin film; the P-type thermoelectric thin film leg is composed of silver paste, gallium-indium alloy, metal coating and Bi 0.5 Sb 1.5 Te 3‑ y B y thermoelectric thin film; the method comprises the following steps: I. weighing; II. single crystal pulling; III. peeling, assembling and connecting. The present application is used for the ultra-flexible single crystal bismuth telluride-based thermoelectric thin film device based on anti-site defect regulation and its preparation.

This invention provides a bismuth telluride composite thermoelectric long strip and its preparation method, belonging to the field of thermoelectric functional coating technology. The preparation method of the bismuth telluride composite thermoelectric long strip provided by this invention includes the following steps: (1) mixing Bi(NO3)3·5H2O and Na2TeO3 with ethylene glycol, and then adjusting the pH value to 7.5–8.5 to obtain a mixed solution; (2) adding carbon nanotubes and ethylene glycol to the mixed solution obtained in step (1), and mixing to obtain a composite thermoelectric film precursor solution; (3) coating the composite thermoelectric film precursor solution obtained in step (2) onto a polyimide substrate, and then performing phase-forming heat treatment and annealing treatment sequentially to obtain the bismuth telluride composite thermoelectric long strip. The results of the examples show that the Bi2Te3 on the bismuth telluride composite thermoelectric long strip prepared by the preparation method provided by this invention has a layered structure, with a grain planar size in the range of 0.5–1 μm.

The present application relates to a kind of microwave response antibacterial promotes the repair of bismuth telluride-based thermoelectric material and preparation and application, belong to biological medicine technical field.The microwave response antibacterial promotes the repair of bismuth telluride-based thermoelectric material includes zinc oxide-bismuth telluride.The preparation method of the microwave response antibacterial promotes the repair of bismuth telluride-based thermoelectric material, including the following steps: bismuth nitrate pentahydrate and polyvinylpyrrolidone are dissolved in ethylene glycol to obtain solution A;Sodium hydroxide and sodium tellurite are dissolved in ethylene glycol to obtain solution B;Zinc oxide is dissolved in ethylene glycol to obtain solution C;Solution A, solution B and solution C are mixed, and the mixed solution is heated, and reaction product is prepared by reaction;The reaction product is treated, and zinc oxide-bismuth telluride is prepared.The microwave response antibacterial promotes the repair of bismuth telluride-based thermoelectric material provided by the present application can not only avoid the related risk of antibiotic treatment when being used for wound infection treatment, but also effectively remove bacterial film and continuously promote wound repair.

The application relates to a high-performance n-type bismuth telluride-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric conversion. The chemical composition of the n-type bismuth telluride-based thermoelectric material is La y Bi 2‑ y Te 2.7 Se 0.3 -xwt%Te, 0<=x<=1.5, 0<=y<=0.015, x and y are not 0 at the same time. Under the premise of fixing the Se doping amount, the application reduces the Te element to increase Te vacancies, reduces the carrier concentration, moves the dimensionless thermoelectric optimization value zT peak to the low-temperature direction, simultaneously utilizes La-doped Bi to optimize the electrothermal transport performance, and finally realizes the obvious improvement of the zT value.

This utility model relates to a non-hermetically sealed light source device, comprising: a base and a hot-side substrate fixed on the base; a horizontally distributed cold-side substrate is arranged above the hot-side substrate; a passive device is fixed on one side of the upper surface of the cold-side substrate, and at least one heat sink is fixed on the other side; a DFB chip coupled to the passive device is fixed on each heat sink; multiple bismuth telluride cores are fixed between the lower surface of the cold-side substrate and the upper surface of the hot-side substrate in the area corresponding to the DFB chip; multiple bismuth telluride pads of the same height as the bismuth telluride cores are fixed between the lower surface of the cold-side substrate and the upper surface of the hot-side substrate in the area corresponding to the passive device. A CPO silicon photonics engine includes multiple non-hermetically sealed light source devices. The advantages are: it can avoid misalignment of the passive device and the DFB chip in the height direction due to thermal expansion, thus making the optical path more stable; it can ensure that the passive device does not experience low-temperature condensation, nor does it experience excessively high temperatures.

This invention discloses a bismuth telluride-based alloy and its processing method. The processing method includes the following steps: (1) providing a bismuth telluride-based master alloy prepared by powder metallurgy; (2) annealing the bismuth telluride-based master alloy in a vacuum environment or under an inert gas atmosphere; and (3) hot forging the annealed bismuth telluride-based master alloy. This invention utilizes annealing and hot forging processes to simultaneously improve the mechanical strength and thermoelectric properties of the bismuth telluride-based alloy.

This invention relates to a reverse extrusion apparatus and extrusion method for producing homogeneous, high-performance bismuth telluride thermoelectric materials, and pertains to the field of thermoelectric material preparation. This invention solves the problems of easy cracking during material forming, poor microstructure uniformity, and poor mass production adaptability in existing bismuth telluride hot extrusion processes. In this invention, the main cylinder and reverse extrusion cylinder of the dual-power extrusion unit drive different crossbeams to move independently, achieving step-by-step extrusion. The mandrel of the triaxial compressive stress forming unit is fixed to the crossbeam driven by the main cylinder, and the hollow plunger is fixed to the crossbeam driven by the reverse extrusion cylinder and sleeved on the outside of the mandrel. The lower ends of both extend into the mold and cooperate with the inner wall of the mold, forming axial and radial synergistic constraints, placing the material in a triaxial compressive stress state. The extrusion method includes loading and vacuuming, heating and heat preservation, main cylinder pre-pressing, reverse extrusion forming, pressure holding and cooling, and demolding. This invention can achieve homogeneous and dense forming of bismuth telluride materials, suppress cracks, and improve thermoelectric and mechanical properties. This invention is used in the preparation of thermoelectric materials.

The application relates to the application material field and discloses a tellurium-bismuth-biomineralization in-vivo stable deposition material and a preparation method, which comprises a nano core with a particle size of 20-100 nm, a PEG modification layer with a molecular weight of 2000-10000 Da and a calcium phosphate mineralization shell with a thickness of 5-15 nm. The tellurium-bismuth-biomineralization in-vivo stable deposition material provided by the application can be stably present in the body, has good targeting property and low toxicity.

A brazing connection method of bismuth telluride and copper with NiCoFeMo as barrier layer relates to the technical field of brazing connection. The present application is to solve the problem of the thermal electric joint of bismuth telluride and copper, which is caused by the element diffusion and finally leads to the joint fracture and the failure of the thermal electric device when serving at 200 DEG C or above. Method: the brazing filler metal is placed between the bismuth telluride and the copper to be welded to obtain the joint to be welded; the joint to be welded is placed in the heating furnace and heated to 300-320 DEG C, and kept at 300-320 DEG C for 5-30 min, and then cooled to room temperature, to complete the brazing connection of bismuth telluride and copper. The present application can obtain a brazing connection method of bismuth telluride and copper with NiCoFeMo as barrier layer.

This invention discloses a numerical simulation system and method for thermoelectric materials in electronic skin, belonging to the field of finite element simulation technology. The system simulates the thermal management capabilities of electronic skin under extreme environments by constructing a three-dimensional thermoelectric coupling model, achieving effective heat transfer within the simulated robot and intelligent regulation of skin temperature. The system comprises a composite wire structure formed by alternating copper wires and bismuth telluride cylindrical particles, utilizing the thermoelectric effect to achieve directional heat transfer. By setting a temperature switching function, the system can automatically adjust the heat source and current according to the skin temperature, achieving low-temperature heating and high-temperature heat dissipation functions. Simulation results show that the system can adjust abnormal skin temperature to the normal range (29–30ºC) in a short time, with fast response time and high adjustment accuracy, effectively solving the problem of limited effectiveness of traditional heat dissipation methods in enclosed spaces.

The application discloses a strong-textured N-type bismuth telluride material regulated by configuration entropy and a preparation method thereof, and belongs to the technical field of thermoelectric materials. 1‑x (Sb2Se2S) x +y at.% BiBr3, wherein x=0.05-0.20 and y=0.18-0.24; the method comprises the following steps: firstly, weighing and mixing; secondly, introducing the mixed powder into a quartz ampoule and vacuum sealing; and thirdly, increasing temperature, keeping temperature and decreasing temperature.The application is used for regulating the strong-textured N-type bismuth telluride material induced by configuration entropy and preparing the same.