Bismuth-telluride-based thermoelectric element and preparation method thereof

A bismuth telluride-based, thermoelectric element technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric devices that only use the Peltier or Seebeck effect, etc., can solve the problems of high device cost, complicated process, high cost, etc., without special equipment , Low preparation cost and low interface resistance

Inactive Publication Date: 2012-04-11
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of bismuth telluride devices by this technology has the following two disadvantages: 1) the process parameters are difficult to control, the metal molybdenum barrier layer and the aluminum electrode are sprayed by plasma, the spraying temperature is too high, and aluminum and molybdenum are easily oxidized during the spraying process; 2) The operating cost is high, the plasma spraying equipment is expensive, and a large amount of aluminum and molybdenum will be wasted during the operation, and the cost is high
Chinese patent CN101409324A also provides a method of using arc spraying to realize the combination of aluminum electrodes, molybdenum barrier layer

Method used

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  • Bismuth-telluride-based thermoelectric element and preparation method thereof
  • Bismuth-telluride-based thermoelectric element and preparation method thereof
  • Bismuth-telluride-based thermoelectric element and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Weigh 4g of P-type bismuth telluride-based thermoelectric powder, 0.2g of metal antimony powder, and 0.1g of metal aluminum powder, and put them into a graphite mold with a diameter of 10mm in the order of bismuth telluride-based thermoelectric powder, antimony powder, and aluminum powder , and then carry out discharge plasma sintering under vacuum: the vacuum degree is 10Pa, the sintering pressure is 60MPa, the heating rate is 100°C / min, the sintering temperature is 420°C, and the holding time is 8min; finally, it is cooled to room temperature with the furnace, and the obtained solid solution ( solid solution, abbreviated as SS) is the bismuth telluride-based thermoelectric element described in the present invention: Al / Sb / Bi 2 Te 3 , whose structure is shown in the figure 1 As shown: it includes an electrode layer 1 , a barrier layer 2 and a bismuth telluride-based thermoelectric layer 3 , and the barrier layer 2 is located between the electrode layer 1 and the bismu...

Embodiment 2

[0039] Weigh 4g of N-type bismuth telluride-based thermoelectric powder, 0.2g of metal antimony powder, and 0.1g of metal aluminum powder, and put them into a graphite mold with a diameter of 10mm in the order of bismuth telluride-based thermoelectric powder, antimony powder, and aluminum powder , and then carry out discharge plasma sintering under vacuum: the vacuum degree is 10Pa, the sintering pressure is 40MPa, the heating rate is 100℃ / min, the sintering temperature is 440℃, and the holding time is 8min; finally, it is cooled to room temperature with the furnace, and the obtained solid solution is Bismuth telluride-based thermoelectric element according to the present invention: Al / Sb / Bi 2 Te 3 .

[0040] According to the analysis, the bismuth telluride-based thermoelectric element prepared in this example also has figure 1 The structure described in and Figure 2 to Figure 6 Features and performance shown.

Embodiment 3

[0042] Weigh 4g of P-type bismuth telluride-based thermoelectric powder, 0.2g of metal antimony powder, and 0.3g of metal copper powder, and put them into a graphite mold with a diameter of 10mm in the order of bismuth telluride-based thermoelectric powder, antimony powder, and copper powder. , and then carry out discharge plasma sintering under vacuum: the vacuum degree is 10Pa, the sintering pressure is 60MPa, the heating rate is 100℃ / min, the sintering temperature is 420℃, and the holding time is 8min; finally, it is cooled to room temperature with the furnace, and the obtained solid solution is Bismuth telluride-based thermoelectric element according to the present invention: Cu / Sb / Bi 2 Te 3 .

[0043] According to the analysis, the bismuth telluride-based thermoelectric element prepared in this example also has figure 1 The structure described in and Figure 2 to Figure 6 Features and performance shown.

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Abstract

The invention discloses a bismuth-telluride-based thermoelectric element and a preparation method thereof. The bismuth-telluride-based thermoelectric element comprises an electrode layer, a blocking layer and a bismuth-telluride-based thermoelectric layer, wherein the blocking layer is positioned between the electrode layer and the bismuth-telluride-based thermoelectric layer; and the blocking layer is made of metallic bismuth or alloy of the metallic bismuth and other metal. The preparation method of the bismuth-telluride-based thermoelectric element comprises the following steps of: respectively weighing a bismuth-telluride-based thermoelectric layer material, a blocking layer material and an electrode layer material; putting the bismuth-telluride-based thermoelectric layer material, the blocking layer material and the electrode layer material into a graphite mold in sequence according to the sequence of the bismuth-telluride-based thermoelectric layer material, the blocking layer material and the electrode layer material; and carrying out hot-pressing sintering in vacuum. In the bismuth-telluride-based thermoelectric element provided by the invention, the combination among all interfaces is good, no cracks and obvious diffusion phenomenon at the interfaces exist, the interface resistance is low and the long-time heat fatigue test can be born. In addition, the preparation method disclosed by the invention has the advantages of simple process, good reliability, low manufacturing cost, no need for special equipment and suitability for on-scale production and the like.

Description

technical field [0001] The invention relates to a bismuth telluride-based thermoelectric element and a preparation method thereof, belonging to the technical field of thermoelectric elements. Background technique [0002] Thermoelectric power generation is a fully static direct power generation method that uses semiconductor thermoelectric conversion materials to convert heat energy (temperature difference) into electrical energy. It is an environmentally friendly green energy technology that is of great significance for alleviating and solving the current growing energy pressure and environmental pollution. The thermoelectric power generation system has the characteristics of compact structure, reliable performance, no noise, no wear, no leakage during operation, good mobility, and is suitable for low energy density recycling. It is especially suitable for recycling industrial waste heat and automobile exhaust waste heat. In 2005, the U.S. Department of Energy launched a re...

Claims

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Application Information

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IPC IPC(8): H01L35/32H01L35/34
Inventor 陈立东李菲黄向阳柏胜强吴汀江莞
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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