5 results about "Diamond crystal" patented technology

The application belongs to the technical field of new energy batteries, and particularly relates to a silicon-carbon material, a preparation method thereof, a negative electrode sheet and a battery. The application provides a silicon-carbon material, which comprises a porous diamond substrate and silicon particles dispersed in the inside of a channel of the porous diamond substrate; the porous diamond substrate comprises a diamond crystal structure; the porous diamond substrate comprises a doping element, the doping element is located in the diamond crystal structure, and the doping element comprises at least one of a boron element and a nitrogen element. The battery prepared from the silicon-carbon material has good cycle performance, rate performance and energy density.

1. Name of the product in this design: Chandelier decorative piece (diamond crystal). 2. Purpose of this design: Indoor lighting fixture accessories. 3. The key design feature of this product is its shape. 4. The picture or photo that best illustrates the key design points: Design 1 3D diagram 1. 5. Design 1 is designated as the basic design.

This application discloses a multi-view 3D reconstruction method and system for the temperature field of diamond growth, relating to the field of diamond growth. The method includes simultaneously acquiring multi-view two-dimensional infrared radiation images of the deposition stage and three-dimensional geometric information of the diamond crystal surface; performing coordinate system calibration based on the multi-view two-dimensional infrared radiation images and three-dimensional geometric information; processing the two-dimensional infrared radiation images from each viewpoint to obtain the corresponding two-dimensional temperature distribution map; reconstructing the three-dimensional surface model of the diamond crystal based on the three-dimensional geometric information; matching and mapping the calibrated coordinates of the three-dimensional surface model in the coordinate system with the calibrated coordinates of the corresponding two-dimensional temperature distribution map in the coordinate system to obtain fused multi-view temperature data, generating a three-dimensional temperature field of the diamond crystal growth surface associated with the three-dimensional surface model. This application can obtain a high-precision three-dimensional temperature field of the diamond crystal growth surface.

The application discloses a method for recovering abrasive grains and base solvents in silicon carbide wafer multi-wire cutting mortar, which comprises the following steps: S1, cleaning a solid part A to remove residual oily substances and metal contaminants, and obtaining a solid part B; S2, adding a dispersant solution to the solid part B for ultrasonic dispersion treatment; S3, naturally settling the treated solid part B to remove suspended liquid, and obtaining primary diamond micro powder; and S4, treating the primary diamond micro powder with SC-1 (NH4OH (28%): H2O2 (30%): DIW=1:1:5) and ultrasonic waves to remove residual organic substances and extremely fine powder particles. The silicon carbide agglomerates are dis-agglomerated by the dispersant, the powder dispersibility is improved, and the silicon carbide powder can be completely separated out. The fine particles and organic substances adhered to the surface of the diamond are better treated clean by using the SC-1 solution and ultrasonic waves. The recovered diamond micro powder has a more round diamond crystal type, and is not easy to scratch during subsequent repeated use.

This invention provides a method for manufacturing a diamond substrate, which involves forming diamond crystals on a substrate using a CVD method. In this method, to form an NVC-containing diamond crystal layer in at least a portion of the diamond crystals, the feed gas is configured as follows: hydrocarbon gas: 0.005 vol% or more and 7.000 vol% or less; hydrogen gas: 85.000 vol% or more and less than 99.995 vol%; nitrogen gas or nitride gas: 5.0 × 10⁻⁶. ‑5 Volume percentage above 8.000% and volume percentage below 8.000% will 12 C-concentrated hydrocarbon gas is used as a hydrocarbon gas in the feed gas. 12 C Concentrated hydrocarbon gas 12 The proportion of carbon in hydrocarbon gases is higher than that in natural hydrocarbon gases. 12 The ratio of C to hydrocarbon gases. Thus, a method for manufacturing a diamond substrate can be provided, which can form a diamond crystal with a highly oriented NV axis (e.g., [111] highly oriented) and having a single spin and a high density of nitrogen-vacancy centers (NVC) by performing CVD on a substrate under specified conditions.