59 results about "Diamond crystal" patented technology

The invention provides a bionic gradient-based TPMS double-channel heat exchanger structure design method, which relates to the technical field of heat exchanger design, and comprises the following steps: S1, creating a cube reference model, determining the position of each node in the reference model according to the spatial topological relation of a diamond crystal structure, and carrying out three-dimensional space connection to form a diamond unit cell support structure; s2, parametric modeling of the multiple tubular objects is conducted through a curved surface tool according to the diamond unit cell support structure, and a tubular curved surface network is generated; s3, performing equidistant offset operation on the tubular curved surface network to obtain a TPMS unit cell structure; s4, performing three-dimensional array on the TPMS unit cell structure to obtain an HRD lattice structure model; and S5, carrying out gradient parameterization regulation and control on the diameter of the fluid channel of the HRD lattice structure model. The heat exchanger has the beneficial effects that unification of light weight and high rigidity is achieved, and the heat exchange efficiency can be remarkably improved while high rigidity and light weight are achieved.

The invention discloses a preparation method of a high-quality self-supporting polycrystalline diamond substrate. The preparation method comprises the following steps: obtaining a larger first substrate and a smaller second substrate; the molybdenum substrate is a polished molybdenum metal substrate; sowing diamond seed crystals on the first substrate by using an ultrasonic sowing method, and growing a nanocrystalline diamond epitaxial layer by using a CVD (Chemical Vapor Deposition) process; cutting the first substrate by using precise laser to obtain an annular polycrystalline diamond solid seed crystal of which the inner diameter is greater than that of the second substrate; placing a second substrate in the inner diameter of the second substrate, guiding generated tiny diamond grains to the second substrate through a boundary induction mechanism and applying direct current bias voltage, and uniformly wrapping the tiny diamond grains to form a self-supporting polycrystalline diamond substrate; according to the preparation method of the self-supporting polycrystalline diamond substrate, the orientation consistency and the crystallization quality of a diamond film are remarkably improved, and the prepared self-supporting polycrystalline diamond substrate has the advantages of being low in surface roughness, compact in structure, simplified in follow-up process and the like.

Method of automated spatial patterning of defect centers (6) in a substrate, particularly a diamond crystal lattice (50), comprising the following steps: - providing a defect center (6) distribution to a machine-learning model, the machine-learning model being particularly trained to determine an output for displacement of at least one defect center (6) based on the provided defect center (6) distribution, the machine learning model providing an output for displacement of individual defect centers (6), - particularly providing a substrate, particularly diamond, comprising defect centers (6) in a bulk structure of the substrate, particularly a bulk diamond crystal lattice (50), - detecting the position of at least one defect center (6) in the bulk structure of the substrate, particularly the bulk diamond crystal lattice (50), and - displacing (61) the at least one defect center (6) in the bulk structure of the substrate, particularly the bulk diamond crystal lattice (50), particularly site-specific, in a defined direction.

The application relates to a deposition chamber structure and an MPCVD device, and belongs to the field of diamond synthesis devices. The technical scheme is as follows: a deposition chamber structure comprises a base, a tubular quartz window is fixedly arranged on the base, an upper cover is sealingly connected above the quartz window, a metal ring is arranged outside the quartz window, a plurality of horizontally arranged and vertically arranged microwave feeding slits are arranged in the middle region of the metal ring, a resonant metal cavity is arranged outside the middle region of the metal ring, the resonant metal cavity is used for being connected with a microwave source, a growth base capable of multi-stage lifting is arranged in the quartz window, the dimension of microwave feeding is increased, a discharge area is coupled above the growth base to form a plasma with the characteristics of large size, uniform stability and high energy density, the growth base can be lifted in multiple stages, the deposition quality of a growth sample is optimized, the deposition area of the growth sample is expanded, and preparation of a high-quality large-size diamond crystal is realized.

The utility model discloses a cleaning device for diamond crystals, and relates to the technical field of diamond machining. The screening device comprises a box body, a feeding mechanism and a cleaning and overturning mechanism are arranged in the box body, and two matched screening mechanisms are arranged in the box body; the screening mechanism comprises two fixing frames arranged in the box body, each fixing frame is provided with two elastic pieces, and a screening plate is arranged at one ends of the multiple elastic pieces. By means of the rotating rod, the cam sleeve can drive the material screening plate to continuously move upwards under the driving of the transmission mechanism, the material screening plate can be driven to rapidly move downwards after rising through the pressure of the rotating rod under the arrangement of the elastic piece, and the material screening plate and the elastic piece are matched for use, so that the material screening efficiency is improved. According to the diamond screening device, the screening plate can be rapidly vibrated, so that the situation that diamonds on the screening plate are accumulated during filtering can be avoided, and the diamond cleaning efficiency is improved.

The invention discloses a low-loss preparation method of a single crystal diamond wafer. The low-loss preparation method comprises the following steps: A, carrying out laser ablation on the surface of a single crystal diamond crystal ingot; b, performing laser-assisted polishing on the surface; c, the ultrafast pulse laser is modulated into N modified light spots, all the modified light spots are made to scan at the corresponding depth positions according to a preset path at the same time, and a scanning face formed by the same modified light spot covers the cross section of the single crystal diamond crystal ingot in the 100 crystal face direction, n laser modified layers distributed in the direction perpendicular to the 100 crystal face in the single crystal diamond crystal ingot are formed after scanning; d, performing stress-induced separation on the monocrystal diamond crystal ingot; e, performing laser ablation on the cutting surface of the single crystal diamond wafer; and F, the cutting face is subjected to laser-assisted polishing. According to the low-loss preparation method of the single-crystal diamond wafer, the material loss of the single-crystal diamond crystal ingot can be reduced, and the wafer yield of the single-crystal diamond crystal ingot can be increased.

The invention provides substrate table system MPCVD equipment. The substrate table system MPCVD equipment comprises a microwave reflection table and a large molybdenum table which are arranged in a stacked mode. The substrate table is arranged on one side, far away from the microwave reflection table, of the large molybdenum table; wherein one side, far away from the microwave reflecting table, of the large molybdenum table is provided with an annular bulge, and the annular bulge is coaxial with the substrate table and surrounds the periphery of the substrate table. By means of the arrangement, the annular boss is arranged on the periphery of the substrate table, plasma formed above the substrate table can be evenly distributed, the temperature difference between the center and the edge is further reduced, it is guaranteed that the diamond growth rate is consistent, the stress of diamond crystals is reduced, and the cracking rate is reduced.

Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle φ of more than 0°, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.

The invention provides a diamond surface quality online sorting method and system for MPCVD, relates to the technical field of diamond growth monitoring, is applied to MPCVD equipment, and the MPCVD equipment is used for generating diamond crystals. Preprocessing the original image to obtain a preprocessed image; s2, extracting and processing the preprocessed image through multi-dimensional surface features to respectively obtain texture features, light intensity distribution features and geometric morphology features of the diamond; s3, a quality evaluation model is constructed and used for inputting texture features, light intensity distribution features and geometric morphology features of the diamond and outputting a diamond surface quality detection result, online real-time monitoring of the surface quality in the MPCVD diamond growth process is achieved, a traditional off-line detection mode is broken through, and the quality of the diamond is evaluated. The problem that the surface defect of the crystal cannot be dynamically tracked within a hundreds of hours of growth cycle is solved.

Method (20) for displacing defect centers (6) in a substrate for quantum applications in a defined direction, the method comprising the following steps - in particular providing a substrate, in particular diamond, which comprises defect centers (6) in a bulk substrate structure, in particular a massive diamond crystal lattice (50), - detecting the position of at least one defect center (6) in the bulk substrate structure, in particular the massive diamond crystal lattice (50), and - Displacing (61) the at least one defect center (6) in the volume substrate structure, in particular the massive diamond crystal lattice (50), in particular in a location-specific manner, in a defined direction.

Provided in the present disclosure are a substrate stage system and an MPCVD apparatus. The substrate stage system comprises a microwave reflection stage and a large molybdenum stage, which are arranged in a stacked manner; and a substrate stage, which is arranged on the side of the large molybdenum stage away from the microwave reflection stage, wherein an annular boss is arranged on the side of the large molybdenum stage away from the microwave reflection stage, and the annular boss is coaxially arranged with the substrate stage and surrounds the periphery of the substrate stage. In this way, by means of the arrangement of the annular boss on the periphery of the substrate stage, plasma formed above the substrate stage can be relatively uniformly distributed, such that the temperature difference between the center and the edge is reduced so as to ensure that the diamond growth rate is consistent, thereby reducing the diamond crystal stress and thus also reducing the splitting rate.

The invention provides a preparation method of a self-supporting substrate for uniform growth of diamond, and relates to the field of diamond crystal growth. The method comprises the following steps: 1) growing a special diamond layer and a self-supporting diamond layer to obtain a self-supporting diamond substrate; (2) plasma etching is conducted on the back face of the self-supporting diamond substrate; (3) polishing the growth surface of the self-supporting diamond substrate; the method comprises the steps of (1) preparing a base with a rough layer surface, (2) preparing a back surface of the self-supporting diamond substrate, (3) preparing a rough layer surface of the base, (4) taking the base with the rough layer surface, and placing the back surface of the self-supporting diamond substrate on the rough layer surface of the base, and (5) carrying out compression joint on the self-supporting diamond substrate and the base to obtain the self-supporting substrate.The self-supporting substrate provided by the invention is beneficial to realizing heat distribution of a uniform interface.

The application discloses a narrow linewidth tunable Raman laser and an emission method, relates to the field of Raman lasers, and comprises a half-wave plate, a pump source and a focusing lens which are arranged on the two sides of the half-wave plate, a laser resonant cavity is arranged on the other side of the focusing lens, a cavity locking frequency doubler is arranged on the other side of the laser resonant cavity, a shaping lens group is arranged between the laser resonant cavity and the cavity locking frequency doubler, a dichroic mirror is arranged on the other side of the cavity locking frequency doubler, the laser resonant cavity is arranged in a V-shaped cavity structure which is composed of an input mirror, an output mirror and a reflective blazed grating, a diamond crystal is arranged between the input mirror and the output mirror, and the reflective blazed grating is arranged below the diamond crystal. The stability of the laser resonant cavity is improved through the design of the cavity mirror, the wavelength adjustment is accurate to 0.01 nm, and the loss in the transmission process is reduced through the cavity locking frequency doubler of the ring-shaped cavity structure.

The invention discloses a three-stage step type nanoindentation creep test indenter and a preparation method thereof. A working part of the pressure head body is composed of three platform-shaped steps which are sequentially distributed in the direction of a central axis, the cross sectional areas of the three platform-shaped steps are increased in a stepped mode, the overall outline of the pressure head body is in a triangular pyramid shape, the surface of the pressure head body is an sp3 hybrid diamond crystal surface subjected to low-temperature catalytic molten salt etching treatment and without an amorphous carbon damage layer, and the curvature radius of the tip of the first step is smaller than 10 nm; the preparation method comprises the following steps: processing a blank by using a focused ion beam; performing pre-passivation to form a tungsten-containing solid precursor film; immersing into low-temperature molten salt containing a vanadium catalyst for reaction; and finally quenching and cleaning. According to the method, through a catalytic cooling and adsorption shielding cooperation mechanism, the sharp point sharpness is effectively kept while an amorphous carbon damaged layer is removed, parasitic creep interference caused by an amorphous layer is eliminated, and cross-scale graded high-precision testing is achieved.

The application discloses an ultrathin diamond clamping device, which comprises, from top to bottom, a graphite pressing block, a polycrystalline diamond limiting sheet, a polycrystalline diamond bottom sheet, a graphite bottom plate and graphite screws for fixing the above-mentioned elements; the polycrystalline diamond limiting sheet is provided with at least one rectangular notch, and the limiting groove for positioning the ultrathin diamond crystal sheet is formed by the rectangular notch and the polycrystalline diamond bottom sheet; the graphite pressing block covers the ultrathin diamond crystal sheet, the graphite screws pass through the graphite pressing block, the polycrystalline diamond limiting sheet and the polycrystalline diamond bottom sheet in sequence and are connected with the graphite bottom plate, the graphite pressing block is extruded by twisting the graphite screws, pressure is applied to the ultrathin diamond crystal sheet to realize clamping. According to the application, the ultrathin diamond clamping device has the advantages of low thermal load, small clamping stress, small radiation damage and the like, reliably supports the stable and efficient generation of the seed laser by the monochromator, and finally helps to realize the high-stability operation of the fully-coherent free electron laser.

The invention relates to a position sensor for the fluorescence-image-based position sensor system of at least one magnetised body (MK). The position sensor comprises a plurality of sensor elements (SE) which are arranged in one or more sensor element layers (SES). Said sensor element layer (SES) can expressly form a continuum, wherein the sensor elements can form a continuous layer of sensor elements lying directly on one another. Detection takes place via paramagnetic centres (NV), in particular NV centres in diamond crystals, which are excited by pump radiation (LB) to emit fluorescent radiation (FL). The intensities of the fluorescent radiation are optically captured by means of photodetector arrays (LSA). The magnetised body (MK) has magnetically differentiated surface regions and can move in up to six mechanical degrees of freedom. The fluorescence images are used to capture or estimate the position, orientation, curvature or distance of the body (MK) by means of computer- or machine-implemented algorithms. The position sensor is suitable in particular for high-precision position capture, even in the event of minimal movements or at a standstill, for example for applications in electric motors.

A magnetic field gradiometer for determining a magnetic field gradient includes at least one excitation light source for emitting excitation light, and two spatially spaced-apart measuring areas for magnetic field measurement. Color centers in diamond are arranged in the two measuring areas. The color centers emit fluorescent light upon excitation using the excitation light. The magnetic field gradiometer further includes at least one microwave emitter for applying at least one microwave field to the spatially spaced-apart measuring areas, two detectors for detecting the fluorescent light from the two spatially spaced-apart measuring areas, and an evaluator for determining the magnetic field gradient based on the fluorescent light detected by the two detectors. The two measuring areas are configured as freestanding measuring waveguides of a common diamond crystal. The diamond crystal is used as a substrate for the measuring waveguides.

The invention belongs to the technical field of diamond processing, and particularly relates to an MPCVD diamond high-efficiency crystal growth process based on multi-parameter coordinated regulation, which comprises the following steps: selecting a proper seed crystal for detection: pretreating the seed crystal to implement a crystal growth step; carrying out post-treatment operation on the prepared crystal; carrying out cleaning treatment; carrying out cutting treatment; grinding and polishing the finished diamond crystal; and carrying out quality inspection after grade identification on the finished product, and screening out unqualified products. According to the method, efficient diamond crystal growth can be achieved by optimizing gas components and gas flow distribution and combining cooperative regulation and control of radio frequency power and bias voltage, the growth rate is remarkably increased, in addition, through multi-parameter cooperative control, especially accurate regulation of temperature, gas flow and gas components, the diamond crystal quality is remarkably improved, and the method is suitable for large-scale production. According to the process, the defect density and stress are effectively controlled, the reaction conditions are optimized, and the energy consumption and resource waste are reduced, so that the production cost is reduced.

This invention belongs to the field of laser technology. It proposes a 10-12 μm tunable diamond Raman laser and a threshold reduction method. A pulsed laser emission system emits a 2.1 μm pulsed laser, which is split into a reflection path and a transmission path by a first polarizer. The reflection path sequentially includes a second half-wave plate, a second polarizer, a first reflecting mirror, and a ring resonator, which outputs a 4.29-4.62 μm laser. The transmission path sequentially includes a third reflecting mirror and a parallel plane cavity, which outputs a 10-12 μm laser. Both types of lasers are injected into the diamond ring cavity via a second and a fourth reflecting mirror, respectively, generating a 10-12 μm tunable diamond Raman laser. This invention utilizes the first-order Raman effect of diamond crystal to obtain long-wave infrared laser in this band, solving the problems of high threshold and low conversion efficiency in existing diamond lasers outputting this laser.

The present invention is a method for producing a diamond substrate in which a diamond crystal layer having a nitrogen vacancy center is formed on a base substrate using a CVD method and using a starting material gas containing a hydrocarbon gas and a hydrogen gas, the method comprising: forming a diamond crystal layer having a nitrogen vacancy center on at least a portion of the diamond crystal; nitrogen gas or nitride gas is mixed into the raw material gas, and the hydrocarbon gas is set to 0.005-6.000 vol% with respect to the amount of each gas contained in the raw material gas. The amount of hydrogen is 93.500 vol% or more and less than 99.995 vol%; nitrogen gas or nitride gas is set to 5.0 * 10 <-5 > vol% or more and 5.0 * 10 <-1 > vol% or less. As a result, provided is a method for producing a diamond substrate, whereby a diamond crystal having a high density of nitrogen-vacancy centers and having an NV axis in a [111] height orientation can be formed on a base substrate by CVD under predetermined conditions.

The invention relates to the field of crystal growth of octahedral diamond crystals, and discloses a method for synthesizing pure octahedral diamond single crystals at high temperature and high pressure, which comprises the following steps of: introducing nitrogen into metal alloy powder in a vacuum environment for nitriding to obtain nitrided metal alloy powder; the nitrided metal alloy powder and graphite powder are uniformly mixed and molded and then assembled into a diamond synthesis cavity, and the octahedral diamond single crystal is synthesized at high temperature and high pressure. The method disclosed by the invention is simple, and the nitrided catalyst is used for synthesizing the diamond single crystal to obtain the high-quality pure octahedral crystal. The octahedral diamond prepared by the method has the characteristics of simple process, high quality, high octahedral crystal proportion and the like.

The application discloses a cubic diamond crystal grain, a preparation method thereof and application of the cubic diamond crystal grain in diamond sheet production, and belongs to the technical field of diamond preparation. In the preparation of the cubic diamond crystal grain, the adding amount of nitrogen gas and the adding amount of boron element in a cubic press are controlled, and the pressure in each stage is controlled, so that the growth shape of the diamond crystal grain is ensured to be a cube, and the cubic diamond crystal grain has excellent thermal conductivity. The cubic diamond crystal grain has great advantages in the preparation of diamond sheets. The prepared diamond sheets are closely arranged, the thermal conductivity of the diamond sheets reaches 1500 W / m*K or more, the bending strength of the diamond sheets reaches 800 MPa or more, and the cubic diamond crystal grain has remarkable advantages in industrial application.

The application belongs to the technical field of new energy batteries, and particularly relates to a silicon-carbon material, a preparation method thereof, a negative electrode sheet and a battery. The application provides a silicon-carbon material, which comprises a porous diamond substrate and silicon particles dispersed in the inside of a channel of the porous diamond substrate; the porous diamond substrate comprises a diamond crystal structure; the porous diamond substrate comprises a doping element, the doping element is located in the diamond crystal structure, and the doping element comprises at least one of a boron element and a nitrogen element. The battery prepared from the silicon-carbon material has good cycle performance, rate performance and energy density.

The application provides a substrate table system MPCVD device, comprising: a microwave reflection table and a large molybdenum table which are arranged in a stack; a substrate table which is arranged on a side of the large molybdenum table away from the microwave reflection table; wherein the side of the large molybdenum table away from the microwave reflection table is provided with an annular protrusion which is coaxial with the substrate table and surrounds an outer periphery of the substrate table. In this way, the annular protrusion arranged on the outer periphery of the substrate table can make the plasma formed above the substrate table more uniformly distributed, thereby reducing the temperature difference between the center and the edge, ensuring the uniformity of the diamond growth rate, reducing the stress of the diamond crystal, and reducing the rate of splitting.

The application discloses a furnace body structure of a synthetic diamond crystal growth equipment, and belongs to the technical field of synthetic diamonds, which comprises a base plate, a top cover arranged on the upper side of the base plate, supporting columns fixedly arranged between the top cover and the base plate, an upper cover arranged between the top cover and the base plate, supporting slide rods fixedly arranged on the outer surface of the upper cover, the supporting slide rods being slidably connected with the supporting columns, and a motor fixedly arranged on the upper end surface of the base plate. The buckle mechanism is arranged, the furnace body is automatically opened, the fixing effect and the stability of the furnace body are enhanced under the action of the fixing assembly and the reinforcing piece, meanwhile, the elastic sealing pieces are additionally arranged on the key joint surfaces, the gaps are filled by pressure self-adapting deformation, the repeated calibration steps required by the traditional multilayer sealing are reduced, under the premise of maintaining high sealing performance, the opening and closing operation steps are reduced to single triggering action, the artificial operation complexity is reduced, and the equipment operation efficiency and the operation stability are simultaneously improved.

The application provides a diamond crystal multi-phonon intrinsic absorption band regulation device and a transmittance regulation method.The device comprises a diamond crystal, a multi-phonon absorption band regulation module and a transmittance regulation module.Based on the diamond crystal multi-phonon intrinsic absorption band regulation device, stress is applied to the diamond crystal, the vibration mode of the diamond crystal is regulated, the multi-phonon combination of the diamond crystal is controlled, the range of the multi-phonon absorption band of the diamond crystal is regulated, the absorption of the pump laser is reduced, the transmittance of the pump laser is increased, the stress applied to the diamond crystal is regulated by combining with a real-time transmittance regulation method, and then the transmittance of the pump laser passing through the diamond crystal meets the use requirement.The range of the multi-phonon intrinsic absorption band of the diamond crystal can be regulated, the absorption of the pump laser wavelength is reduced, the 'barrier' generated by the intrinsic absorption band is broken, and a new wavelength of high-beam-quality and high-power diamond Raman laser is output.

This invention belongs to the field of laser technology and proposes a seed-injection-based diamond Raman laser and its operating method. A single-frequency continuous-wave seed laser source is used to inject seeds into a diamond ring cavity, reducing the pump threshold of the diamond Raman laser. By changing the cavity mirror parameters of the diamond ring cavity and tuning the output wavelength of the single-frequency continuous-wave seed laser source, Raman laser output in a preset band is achieved. Based on the advantage of diamond crystal having the largest Raman frequency shift coefficient, and by combining seed injection technology with a diamond ring cavity, the pump threshold of a 2μm band laser pumping a diamond all-solid-state Raman laser is reduced. This enables the laser to achieve pulsed laser output of 2.9μm band first-order Stokes light and 4.7μm band second-order Stokes light at lower pump energies, improving the energy utilization efficiency of the laser.

The invention provides a device for uniformizing a polycrystalline or monocrystalline diamond growth temperature field and a diamond growth method, and relates to the field of polycrystalline or monocrystalline diamond crystals. The device comprises a growth support, a substrate sheet and a plurality of heat dissipation adjusting sheets which can be stacked in sequence, the substrate sheet is arranged at the top of the growth support and used for depositing diamond, and the growth support is used for being placed on a heat dissipation table with a cooling water channel; a heat dissipation groove is formed in the bottom of the growth support, and a connecting column is arranged in the heat dissipation groove; connecting through holes are formed in the heat dissipation adjusting pieces, and the connecting columns are detachably connected with the connecting through holes. According to the shape and distribution of the temperature field of the diamond deposition area, the heat dissipation adjusting fins with the corresponding shape and number can be installed, so that the heat conductivity of the area with the high temperature of the inner ring in the temperature field of the diamond deposition area is high, and the heat conductivity of the area with the low temperature of the outer ring in the temperature field of the diamond deposition area is low; and the temperature field of the diamond deposition area is kept balanced.

The invention discloses an ultrathin diamond clamping device which comprises a graphite pressing block, a polycrystalline diamond limiting piece, a polycrystalline diamond bottom piece and a graphite bottom plate which are sequentially arranged from top to bottom, and graphite screws used for fixing the elements. At least one rectangular notch is formed in the polycrystalline diamond limiting piece, and a limiting groove used for positioning the ultrathin diamond crystal piece is defined by the rectangular notch and the polycrystalline diamond bottom piece; the graphite pressing block covers the ultra-thin diamond crystal wafer, the graphite screw sequentially penetrates through the graphite pressing block, the polycrystalline diamond limiting piece and the polycrystalline diamond bottom piece and then is connected with the graphite bottom plate in a matched mode, the graphite pressing block is extruded by twisting the graphite screw, and pressure is applied to the ultra-thin diamond crystal wafer so that clamping can be achieved. According to the invention, the device has the advantages of low thermal load, small clamping stress, small radiation damage and the like, provides reliable support for a monochromator to stably and efficiently generate self-seed laser, and finally assists in realizing high-stability operation of full-coherent free electron laser.

The invention belongs to the technical field of lasers. According to the 10-12 [mu] m tunable diamond Raman laser and the threshold reduction method, a pulse laser emission system emits 2.1 [mu] m pulse laser, the 2.1 [mu] m pulse laser is divided into a reflection path and a transmission path through a first polarizer, the reflection path is sequentially provided with a second half-wave plate, a second polarizer, a first reflector and an annular resonant cavity, and the annular resonant cavity outputs 4.29-4.62 [mu] m laser; a third reflecting mirror and a parallel plane cavity are sequentially arranged on a transmission path, the parallel plane cavity outputs 10-12 [mu] m laser, the two kinds of laser are injected into the diamond annular cavity through a second reflecting mirror and a fourth reflecting mirror respectively, and 10-12 [mu] m tunable diamond Raman laser is generated in the diamond annular cavity. The long-wave infrared laser of the wave band is obtained through the first-order Raman effect of the diamond crystal, and the problems that when existing diamond outputs the laser, the threshold value is high, and the conversion efficiency is low are solved.