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1266 results about "Gas composition" patented technology

The Gas composition of any gas can be characterised by listing the pure substances it contains, and stating for each substance its proportion of the gas mixture's molecule count.

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
Owner:APPLIED MATERIALS INC

Method for etching a trench having rounded top and bottom corners in a silicon substrate

The present invention provides straight forward methods for plasma etching a trench having rounded top corners, or rounded bottom corners, or both in a silicon substrate. A first method for creating a rounded top corner on the etched silicon trench comprises etching both an overlying silicon oxide layer and an upper portion of the silicon substrate during a "break-through" step which immediately precedes the step in which the silicon trench is etched. The plasma feed gas for the break-through step comprises carbon and fluorine. In this method, the photoresist layer used to pattern the etch stack is preferably not removed prior to the break-through etching step. Subsequent to the break-through step, a trench is etched to a desired depth in the silicon substrate using a different plasma feed gas composition. A second method for creating a rounded top corner on the etched silicon trench comprises formation of a built-up extension on the sidewall of an overlying patterned silicon nitride hard mask during etch (break-through) of a silicon oxide adhesion layer which lies between the hard mask and a silicone substrate. The built-up extension upon the silicon nitride sidewall acts as a sacrificial masking material during etch of the silicon trench, delaying etching of the silicon at the outer edges of the top of the trench. This permits completion of trench etching with delayed etching of the top corner of the trench and provides a more gentle rounding (increased radius) at the top corners of the trench. During the etching of the silicon trench to its final dimensions, it is desirable to round the bottom corners of the finished silicon trench. We have discovered that a more rounded bottom trench corner is obtained using a two-step silicon etch process where the second step of the process is carried out at a higher process chamber pressure than the first step.
Owner:APPLIED MATERIALS INC

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
Owner:APPLIED MATERIALS INC

Device with culture relics exhibiting and protecting function

The invention provides a device which can exhibit and protect cultural relics. The device is characterized in that the device comprises a base; a base plate is arranged at the top of the base; the bottom of a glass cover is fixed on the base plate through a safety lock reed, and a safety alarm is arranged on the safety lock reed; a gland bush is arranged at the butt joint of the glass cover and the base plate; a rotating bushing is arranged at the middle part of the base plate and a gland bush is arranged on the rotating bushing; rotating shafts are arranged inside the rotating bushing and the base; showcase stands are arranged at the top parts of the rotating shafts, and step motors are arranged at the tail ends of the rotating shafts; a temperature sensor, a pressure sensor, a humidity sensor and a gas composition sensor are arranged at two sides of the base plate; and a cavity refrigerating / heating device is arranged at the bottom of the base plate. The device has the advantages that the device can well exhibit the cultural relics and can create a manual protecting environment without damages. The device prevents oxidation, photodegradation, overheating volatilization, mould development and microorganisms and has the function of protecting the cultural relics and the precious article inside the cavity.
Owner:DONGHUA UNIV
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