The LBD of current transmission reflection reducing window layer and high reflecting graph transfer underlay configuration belongs to field of semiconductor photoelectron technique. It includes upper electrode (100), current transmission reflection reducing window layer (111) which comprises conducting reflection reducing light layer (130), current barrier layer (110) and current expansion layer (201), upper limit layer (300), source area (500), lower limit layer (400), graphic current expansion layer (202), conducting high glisten layer (140), conducting linkage layer (150) and transfer underlay (160) or rack constructed by the upper current expansion layer (200), conducting linkage layer (150), conducting high glisten layer (140) and graphic transfer underlay (161), lower electrode (800). The invention increases the current expansion and light output, and can increase the light efficiency greatly, it can realize the high efficiency, high brightness LED lightening; the heat property and reliability are high.