The invention relates to the distribution of a current
barrier layer, a light-emitting
diode which is corresponding to an upper
electrode and a process for preparation, belonging to the technical field of
semiconductor photoelectrons. The structure comprises an upper
electrode (10), a current spreading layer (100), an upper limiting layer (300), an active region (200), a lower limiting layer (400), a buffer layer (500), an under-layer (600) and a lower
electrode (20), and further comprises a current
barrier layer (120) located on the right lower portion of the upper electrode, wherein the distribution of the current
barrier layer is corresponding to the upper electrode, a conductive light anti-reflection layer (101) is arranged between the upper electrode and the current spreading layer inside the conductive light anti-reflection layer or the current spreading layer or the upper limiting layer or the active region, or inside adjacent two
layers, three
layers or four
layers, wherein the current barrier layer is realized through the post techniques. The current barrier layer corresponding to the upper electrode nearly completely avoids light and heat loss generated by idle current, thereby increasing the light extraction efficiency of the LED, and increasing the light emitting intensity, and the structure reduces the generation of heat, which is especially suitable for the preparation of large-power LEDs.