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235results about How to "Improve thermal characteristics" patented technology

Method for preparing formed selective catalytic reduction denitration catalyst by using ultrasonic mixing sedimentation method

The invention discloses a method for preparing a formed selective catalytic reduction (SCR) denitration catalyst by using an ultrasonic mixing sedimentation method, comprising the following steps of: preparing metatitanic acid as a dipping carrier by using the processes of uniform sedimentation and direct sedimentation sequentially and being assisted by an ultrasonic strengthened reaction process by taking industry titanyl sulfate as a raw material; then mixing with an ammonium metavanadate-ammonium tungstate-oxalate solution, a flocculating agent comprising polyacrylamide and glass fibre, a structure promoter, and the like, and stirring to finish the processes of active component dipping and loading and plastic pasty master batch preparation synchronously. The prepared master batch is processed by a vacuum-extruder after finely crushed to obtain a formed catalyst green body, and finally the preparation process of the formed SCR denitration catalyst is finished through drying and sintering operations. Compared with the traditional preparation process of the SCR denitration catalyst, the method has simple and clear process and high production efficiency, and the raw materials for preparing the carrier of the catalyst have wide sources and low cost, thereby lowering the production cost to a certain extent.
Owner:SOUTHEAST UNIV

SOI (silicon on insulator) LIGBT (lateral insulated gate bipolar transistor) device unit with p buried layer and longitudinal channel

The invention relates to an SOI (silicon on insulator) LIGBT (lateral insulated gate bipolar transistor) device unit with a p buried layer and a longitudinal channel. The existing products restrict the improvement of the device structures and the electrical properties. The device unit comprises a p-type semiconductor substrate, a buried oxide layer and a p buried layer region in sequence, wherein a metal gate, an n-type heavily doped polysilicon gate, a gate oxide layer and an n-type lightly doped drift region are arranged at the top of the p buried layer region side by side in sequence; a first p-type well region and an n-type buffer region are respectively embedded at the two sides at the top of the n-type lightly doped drift region; an n-type cathode region and a first p well ohmic contact region are embedded at the top of the first p-type well region; a second p-type well region and an anode short-circuit point region are embedded at the top of the n-type buffer region; a second p well ohmic contact region is embedded at the top of the second p-type well region; and a first field oxide layer, a second field oxide layer, an anode metal electrode and a cathode metal electrode are arranged at the top of the device unit. The device unit has the beneficial effects of reducing the spreading resistance, improving the conductivity modulation effect of the drift region, reducing the on-state power consumption and obviously improving the thermal property of the device.
Owner:SERVICE CENT OF COMMLIZATION OF RES FINDINGS HAIAN COUNTY

High temperature resistant electrical soft composite material and manufacturing method thereof

The invention discloses a high temperature resistant electrical soft composite material and a manufacturing method thereof. The invention is characterized in that: the high temperature resistant electrical soft composite material is a two-, three- or four-layer high temperature resistant electrical soft composite material comprised of a thin film layer, an adhesive layer and a synthetic fiber paper layer; the adhesive layer is prepared by mixing 115 to 230 weight parts of hydroxy-terminated prepolymer, 30 to 83 weight parts of multifunction isocyanate prepolymer, 70 weight parts of polyglycerol-modified ureido-ene resin, 150 to 300 weight parts of solvent; after an adhesive is applied on a thin film or synthetic fiber paper, the thin film or synthetic fiber paper is delivered to a drying channel to pass through an area, an area II at and an area II at 50 to 120 DEG C respectively and at a vehicle speed of 2 to 20 m/min to remove the solvent; then the thin film or synthetic fiber paper is cooled first to room temperature and then to 80 DEG C and is combined with the synthetic fiber paper or the thin film by hot rolling; the combined product is wounded and heated to 140 DEG C from room temperature for aging for 8 to 72 hours; and thus, the product is obtained. The product of the invention, which has high performance, can be used for motor element insulation, inter-winding insulation, gasket insulation and air-immersed transformer interlayer insulation.
Owner:四川东材新材料有限责任公司

Distribution of current blocking layer, LED corresponding to the upper electrode and preparation thereof

The invention relates to the distribution of a current barrier layer, a light-emitting diode which is corresponding to an upper electrode and a process for preparation, belonging to the technical field of semiconductor photoelectrons. The structure comprises an upper electrode (10), a current spreading layer (100), an upper limiting layer (300), an active region (200), a lower limiting layer (400), a buffer layer (500), an under-layer (600) and a lower electrode (20), and further comprises a current barrier layer (120) located on the right lower portion of the upper electrode, wherein the distribution of the current barrier layer is corresponding to the upper electrode, a conductive light anti-reflection layer (101) is arranged between the upper electrode and the current spreading layer inside the conductive light anti-reflection layer or the current spreading layer or the upper limiting layer or the active region, or inside adjacent two layers, three layers or four layers, wherein the current barrier layer is realized through the post techniques. The current barrier layer corresponding to the upper electrode nearly completely avoids light and heat loss generated by idle current, thereby increasing the light extraction efficiency of the LED, and increasing the light emitting intensity, and the structure reduces the generation of heat, which is especially suitable for the preparation of large-power LEDs.
Owner:沈光地

Preparation method for vanadium phosphorus oxide catalyst used in selective oxidation of hydrocarbon

The present invention relates to a vanadium phosphorus oxide catalyst, and mainly solves the problem that the catalytic performance of a catalyst in the prior art in preparing maleic anhydride by selective oxidation of a hydrocarbon is poor. For well solving the aforementioned technical problem, according to the technical scheme of the present invention, a preparation method of the vanadium phosphorus oxide catalyst comprises the following steps of: 1) mixing tungsten carbide powder with a phosphoric acid solution, raising the temperature of the mixture to 50-100 DEG C and enabling the mixture to react for 1-10 hours, and carrying out filtering and drying to obtain tungsten-carbide subjected to phosphate processing; 2) after mixing a vanadium compound, and the tungsten-carbide subjected to phosphate processing with an organic solvent, carrying out stirring and slowly adding 85wt%-110wt% of phosphoric acid, and performing heating reflux for 8-32 hours; 3) filtering and washing the obtained catalyst precursor solution after cooling, and carrying out drying at 100-150 DEG C to obtain a catalyst precursor; and 4) obtaining an active catalyst by performing calcination activation on the catalyst precursor. The prepared catalyst can be used in the industrial production of maleic anhydride.
Owner:CHINA PETROLEUM & CHEM CORP +1

Electrostatic suppressing element and production method thereof

The invention relates to an electrostatic suppressing element and a production method thereof. The electrostatic suppressing element comprises a ceramic substrate (1), a left outer electrode (2) and a right outer electrode (2'), wherein the left outer electrode (2) and the right outer electrode (2') are arranged at two ends of the ceramic substrate (1) respectively, and the electrostatic suppressing element is characterized in that the ceramic substrate (1) consists of an upper protective layer (112), at least one through hole layer (42) and a lower protective layer (111), the through hole layer (42) is provided with at leas one through hole, the upper surface and the lower surface of the through hole are covered by a printing electrode layer, a voltage-sensitive ceramic functional phase (41) is filled in the through hole in the through hole layer (42), the printing electrode layer is alternately led out from two ends of a product, and each printing electrode layer is only electrically connected with the outer electrode on one side. The voltage of the electrostatic suppressing element is stable under an over-temperature condition, the response time is shortened, the weaknesses of a piezoresistor are overcome, and the electrostatic suppressing element has the characteristics of low electric capacity and small leaked current.
Owner:NANJING SART SCI & TECH DEV
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