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120results about How to "High luminous intensity" patented technology

Panchromatic fluorescent anti-counterfeiting ink based on conjugated polymer nano-particles

ActiveCN104031477AHigh luminous intensityStable in natureInksFunctional polymersNon toxicity
The invention discloses a panchromatic fluorescent anti-counterfeiting ink based on conjugated polymer nano-particles, belonging to the technical field of nano luminescent materials. The panchromatic fluorescent anti-counterfeiting ink consists of 0.001-1% of conjugated polymer nano-particles, 0-20% of additive and water in percentage by mass, wherein the conjugated polymer nano-particles consist of a conjugated polymer and a functional polymer; the functional polymer accounts for 1-20% in percentage by mass of the conjugated polymer nano-particles. A prepared nano-particle aqueous solution with small size and uniform distribution can be used as the fluorescent anti-counterfeiting ink with variety of light-emitting wavelengths such as red, green, blue and the like. The anti-counterfeiting ink can be used for obtaining panchromatic anti-counterfeiting patterns with high illumination brightness, stability and non-toxicity by virtue of technologies such as handwriting, ink-jet printing and silk-screen printing. By adopting the panchromatic fluorescent anti-counterfeiting ink, the application range of conjugated light-emitting polymers can be expanded, and the problems that a conventional anti-counterfeiting ink hardly realizes panchromatic and stable anti-counterfeiting can be solved. The panchromatic fluorescent anti-counterfeiting ink disclosed by the invention has a plurality of characteristics of an ideal anti-counterfeiting ink, and can be used for obtaining polychromatic, stable and high-brightness fluorescent anti-counterfeiting patterns.
Owner:JILIN UNIV

CdSe/ZnS quantum dot nano-cluster based electrochemiluminescence biological sensor, as well as manufacturing method and application thereof

The invention discloses a CdSe/ZnS quantum dot nano-cluster based electrochemiluminescence (ECL) biological sensor, as well as a manufacturing method and application thereof to cancer cell detection. According to the technical scheme of the invention, the ECL biological sensor is manufactured by the steps of modifying a magnetic nano-gold rod on the surface of a gold electrode, connecting a cell aptamer, then assembling a nano-gold-DNA initiating chain and finally fixing a CdSe/ZnS quantum dot nano-cluster ECL signal probe. The sensor provided by the invention is washed and then subjected to oscillation warm bath with 100 uL of PBS solution containing cancer cells with different concentration for 45 to 60 minutes, an ECL test is conducted, and the luminescent intensity and the concentration of to-be-tested samples (the cancer cells) form a linear relationship. An nano-gold amplification effect and a hybrid chain type reaction amplification technology are combined, a large amount of CdSe/ZnS quantum dots are assembled on a nano-line, the ECL signal is greatly amplified, the cancer cells are subjected to high-sensitivity and high-selectivity detection, and the method has huge application potential in early clinical detection of the cancer cells.
Owner:QINGDAO UNIV OF SCI & TECH

Difunctional light conversion master batches and preparation method thereof

The invention discloses difunctional light conversion master batches which comprise difunctional light conversion agents, modifying agents and organic polymer materials. A constituting general formula of the difunctional light conversion master batches is Ca1-xNxF2:Eu, TM, wherein the x is greater than or equal to 0 and is smaller than or equal to 1, the N is one kind or more kinds selected from Ba, Zn, Sr, Mg, Hg and Fe, and the TM is one kind or more kinds selected from Sm, Cu, Pr, Tb, Ce, La, Dy, Mn and Ag. The difunctional light conversion agents are good in stability, high in luminous intensity, adjustable in blue/red orange light intensity, and capable of being used for production of difunctional light conversion master batches and then for production of difunctional light conversion films. The manufactured difunctional light conversion master batches can carry out pre-dispersion for red light conversion agents, dispersity of the red light conversion agents in film base bodies is improved, dust pollution when on-site operation is carried out is reduced, and thus the manufactured light conversion films have a good light conversion effect. The difunctional light conversion films can convert ultraviolet light (300nm-380nm) and green light (520nm-560nm) in sunlight to strong blue light (400nm-500nm) and red orange light (575nm-630nm) which can promote growth of crops simultaneously.
Owner:FOSHAN ONMILLION NANO MATERIALS

Silicate green fluorescent powder used for LEDs and preparation method thereof

The invention discloses a doped system of silicate green fluorescent powder and a preparation method of the doped system of the silicate green fluorescent powder, and belongs to the technical field of luminescent materials. The chemical formula of the silicate green fluorescent powder is , wherein0<=x<=0.25, 0<y<=0.02 and 0<z<=0.1.. The method includes the specific steps that according to the stoichiometric ratio of all the elements in the chemical formula, barium salt, lithium salt, silica, europium oxide, erbium oxide and a moderate amount of surfactant are weighed; a precipitating agent solution is prepared; the europium oxide and the erbium oxide are dissolved with concentrated acid, and water bath processing is performed after a moderate amount of deionized water is added; then the barium salt, the lithium salt, the silica and the surfactant are added and stirred continuously, the precipitating agent is dripped in, the PH is adjusted to be larger than or equal to 7, and the mixture is continuously stirred for 1-4 hours; drying is directly performed, and a precursor is obtained; the precursor is placed in an atmosphere furnace with reducing atmosphere and calcined at 1000-1300 DEG C for 1-7 hours, and the needed fluorescent powder is obtained. The green fluorescent powder used for LEDs is high in luminescence intensity, good in stability and color rendering performance and applicable to exciting near ultraviolet radiation InGaN tube cores.
Owner:SICHUAN UNIV

A kind of fluorescent powder based on ultraviolet light or blue light excitation and its preparation method and application

ActiveCN102277165AHigh luminous intensityWide excitation wavelengthGas discharge lamp usageLuminescent compositionsWhite lightFluorescent materials
The invention relates to fluorescent powder based on ultraviolet light or blue light excitation, a preparation method thereof and application thereof, and relates to a fluorescent material in the technical field of luminescence. By providing the fluorescent powder, the problem of low luminescent efficiency due to reabsorption among different kinds of fluorescent powder in the process of manufacturing white light-emitting diodes (LED) by a process for mixing the fluorescent powder in the prior art is solved. The fluorescent material has a chemical formula (M3-xMnx)(R2-yCey)(Si,GE)3O12, whereinM is at least one of Mg, Ca, Sr, Ba or Zn; R is at least one of Sc, Y, La, Gd or Lu; and x and y are molar fractions, x is more than or equal to 0.01 and less than or equal to 1, and y is more than or equal to 0.0001 and less than or equal to 0.5. After being ground and mixed uniformly, the fluorescent material is put into a crucible and is put into a high-temperature furnace under the condition of reduction atmosphere to obtain the fluorescent powder. The fluorescent powder can be used as single fluorescent powder to manufacture the white LED, and is high in luminous intensity and chemical stability.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Blue fluorescent powder for white-light LED and preparation method thereof

InactiveCN101735804AHigh luminous intensityGood color renderingGas discharge lamp usageLuminescent compositionsSolid phasesChemistry
The invention relates to blue florescent powder for a white-light LED, belonging to the technical field of rare earth luminescent materials. The blue florescent powder has a chemical formula of: Ca<1-x>SiO3:xEu2+, wherein x is more than 0 and less than 0.2. The preparation method comprises the following steps of: respectively weighing calcium salts, silicic acid, europium nitrate and an appropriate amount of surfactant and fluxing agent according to the stoichiometric ratio in the chemical formula; fully mixing the weighed reactant, the surfactant and an appropriate amount of ligands and then ball-milling, and adding a lubricating agent when in ball-milling; filtering, washing and drying to obtain a precursor; evenly mixing the precursor with the fluxing agent, and then calcining under the reducing atmosphere to obtain the required florescent powder. In the invention, the blue florescent powder for the LED is prepared by adopting a mechanical force solid-phase chemical reaction method, the specific surface area of the reactant is increased by utilizing the shearing force and the impact force generated in the ball-milling process, the contact face and the diffusion speed of the reactant are improved, and the required time in the chemical reaction is shortened. The prepared fluorescent powder has high luminescent strength as well as good color rendering property and stability, and is suitable for LEDs excited by ultraviolet and near ultraviolet.
Owner:SICHUAN UNIV

Blue fluorescent powder for near ultraviolet LED and preparation thereof

InactiveCN101440283AHigh luminous intensityGood color renderingAlkaline-earth metal silicatesLuminescent compositionsMuffle furnaceIon
The invention relates to blue fluorescent powder for a near ultraviolet LED and belongs to technology for preparing rare-earth fluorescent powder; the blue fluorescent powder has a chemical formula of Ca1-xMgSi2O6:xEu<2+>, x is more than 0 and less than 0.2; the technology comprises the following specific steps: according to the stoichiometric ratio of the chemical formula, calcium salt, magnesium salt, silicic acid, europia and proper amount of precipitator, surfactant and fluxing agent are weighed; the europia is dissolved through concentrated acid, is added with proper amount of deionized water, is subjected to water bath treatment, is added with the calcium salt, the magnesium salt and the surfactant, is stirred and is added with the precipitator for several times; the PH value of the solution is regulated to be more than or equal to 7 through ammonia; the solution is continuously stirred for 0.5 to 4 hours, is kept stand or is subjected to centrifugal precipitation, suction filtering, washing and drying to obtain a precursor; and the precursor and the weighed fluxing agent are evenly mixed, are positioned in a muffle furnace with the protection of reducing atmosphere and are calcined to obtain the needed fluorescent powder. The fluorescent powder completes adulteration and once calcination synthesis when the precursor is subjected to thermal decomposition, has good luminous intensity, stability, color rendering and granularity and is applicable to being used as the blue fluorescent powder of LED activated by InGaN tube core of near infrared radiation (350-410nm).
Owner:SICHUAN UNIV

Multi-quantum well layer, LED epitaxial structure and preparation method thereof

InactiveCN108682719AHigh luminous intensityCrystal quality does not deteriorateSemiconductor devicesMaterial qualityQuantum well
The invention discloses a multi-quantum well layer which is formed by x InGaN quantum well layers and (x+1) GaN quantum barrier layers which are alternately laminated, wherein X>=1. The molar ratio ofthe In component of the InGaN quantum well layers is 10-20%. The silicon doping concentration of the first GaN quantum barrier layer is 5x10<17>-1x10<19>cm<-3>. The silicon doping concentration of the second GaN quantum barrier layer is y times of the silicon doping concentration of the first GaN quantum barrier layer. The silicon doping concentration of the ith GaN quantum barrier layer is y<i-1> times of the silicon doping concentration of the first GaN quantum barrier layer, wherein 0.5<y<1 and 1<i<=x. The silicon doping concentration of the (x+1)th GaN quantum barrier layer is zero. The invention also discloses an LED epitaxial structure and a preparation method thereof. The multi-quantum well layer has gradient silicon doped quantum barriers so that the electron concentration in thequantum well can be increased and the light-emitting region in the quantum well can be regulated and controlled without further deterioration of the material quality, and thus the luminous intensity of the LED can be enhanced and the luminous wavelength uniformity can be improved.
Owner:HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD

Method for improving luminosity of europium-doped yttrium oxide red fluorescent powder

The invention discloses a method for improving luminosity of europium-doped yttrium oxide red fluorescent powder. In the method, yttrium nitrate, europium nitrate and sodium hydroxide are used as reactants, a two-steps hydrothermal method is carries out in cooperation with subsequent thermal treatment. The method specifically comprises the steps of: firstly, synthesizing Y(OH)3:Eu<3+> at 220 DEG C hydrothermally, then, cladding the Y(OH)3 onto the surface of the Y(OH)3:Eu<3+> under the hydrothermal condition, and finally carrying out thermal treatment on the obtained product at 1000 DEG C to obtain the fluorescent powder of a Y2O3:Eu<3+>/Y2O3 nuclear-shell structure, wherein the molar ratio of the nuclear of Y2O3:Eu<3+> to the shell of Y2O3 is (3:1)-(10:1). By means of the homogeneous cladding, the surface defects of the Y2O3:Eu<3+> nano light-emitting particles can be effectively reduced, and the luminosity of the Y2O3:Eu<3+> nano light-emitting particles can be improved by 5-28% in comparison with that of like products without cladding. By means of the method, the luminosity of the homogeneous cladding product is obviously improved, the advantages of simple process, mild reaction conditions and convenience in operation are achieved, and the method is suitable for large-scale industrialized production.
Owner:ZHEJIANG SCI-TECH UNIV

Quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and preparation method thereof

ActiveCN106567054AWith Si-V light emitting performanceHigh luminous intensityChemical vapor deposition coatingBinding forceHot filament
The invention provides a quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film. A preparation method of the quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film includes the steps that a nano-diamond solution is used for performing sonic oscillation pretreatment on a quartz substrate; a hot filament chemical vapor deposition method is adopted, and preparation is conducted on the pretreated quartz substrate so that a nano-diamond thin film can be obtained; and then the nano-diamond thin film is placed into the air of 500-650 DEG C for heat preservation of 10-50min, and accordingly the quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film is obtained. The preparation method is simple and easy to implement and operate. Binding force of the prepared high Si-V light-emitting single-particle-layer nano-diamond thin film and the quartz substrate is weak, a good foundation is laid for obtaining Si-V light-emitting nano-diamond crystalline grains by means of stripping, and therefore the quartz-based Si-V light-emitting single-particle-layer nano-diamond thin film and the preparation method thereof are of great important scientific significance and engineering value to application of nano-diamond in the fields of biomarkers, single-photon sources and the like.
Owner:ZHEJIANG UNIV OF TECH
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