The invention discloses a floating interactive intelligent display
chip based on dynamic distance sensing and a preparation process, and relates to the field of integrated
chip preparation, the floating interactive intelligent display
chip comprises a substrate layer, a buffer layer, an intrinsic layer, a multi-
quantum well layer, a
barrier layer, a source
electrode, a grid
electrode, a p-GaN layer, an
anode and a drain
electrode, the buffer layer, the intrinsic layer, the multi-
quantum well layer and the
barrier layer are sequentially arranged on the substrate layer, and the source electrode, the grid electrode, the p-GaN layer, the
anode and the drain electrode are sequentially arranged on the substrate layer. The source electrode is arranged on one side of the upper surface of the
barrier layer, the grid electrode is arranged in the middle of the upper surface of the barrier layer, the p-GaN layer is arranged on the other side of the upper surface of the barrier layer, and the
anode and the drain electrode are sequentially arranged above the p-GaN layer. An InGaN / GaN multi-
quantum well structure is embedded into a p-GaN HEMT epitaxial layer structure to form a light-emitting HEMT structure, and a driving
transistor, a
light source and a photoelectric
detector are subjected to monolithic integration, so that a floating interactive intelligent display chip with an epitaxial integrated structural characteristic is realized.