2941results about How to "High luminous intensity" patented technology

In a luminescence device formed of one or plural layers of organic film between a cathode and an anode, at least one layer is a luminescence layer, and a luminescence molecule of a metal coordination compound having a basic structure represented by formula (1) below and having a substituent on at least one of cyclic groups A and B is incorporated as a guest in a host material at a concentration of at least 8 wt. %, which is higher than a concentration at which a luminescence molecule of a similar structure but having no substituent exhibits a maximum luminescence efficiency to form the luminescence layer. As a result, a high-efficiency luminescence device is provided, which is less liable to cause concentration extinction even when a luminescence molecule is contained at a high concentration relative to the host material in the luminescence layer.

The invention discloses a novel piezoluminescence material with thermal activation delayed fluorescence and aggregation-induced emission properties and a synthetic method and the application of the novel piezoluminescence material. The core structure of the novel piezoluminescence material is carbazole phenothiazine substituted diphenyl sulfone, and the novel piezoluminescence material has a piezoluminescence property, the thermal activation delayed fluorescence property and the aggregation-induced emission property. The synthetic method of the novel piezoluminescence material is simple in process, purification is easy, and the obtained novel piezoluminescence material is high in piezoluminescence intensity and suitable for preparing non-doping luminescent layer materials in pressure sensors or anti-counterfeiting trademark or organic electroluminescent material devices.

In an active-type electroluminescent (EL) display, a conductor interconnecting a cathode (55) of an EL panel (30, 40) and a connection terminal of a signal input substrate (35) has a multilayer structure formed of a cathode material and a conductive material used in a thin-film transistor forming step. The conductor may be formed of a conductive material used in a thin film transistor forming step. A metal material for a gate electrode or drain electrode is preferably used as the conductive material. The connection conductor structure can reduce the electrical resistance of the connection conductor, thus preventing a decrease in display intensity of an EL display.

A light emitting diode comprising a light emitting diode element 20 mounted on a glass epoxy substrate 12, this light emitting diode element 20 being protected at its surface side by a resin seal member 33, in which: a light emitting diode element for blue luminescence, formed of gallium nitride type compound semiconductor is used as the above-mentioned light emitting diode element 20; and a fluorescent material containing layer 21 composed of a fluorescent material containing layer 21 composed of a fluorescent material dispersed into an adhesive is arranged on the back side of this light emitting diode element. On the back side of the light emitting diode element 20, blue luminescence is converted in wavelength to produce white luminescence of high intensity.

Applicant's present invention is a composite scintillator having enhanced transparency for detecting ionizing radiation comprising a material having optical transparency wherein said material comprises nano-sized objects having a size in at least one dimension that is less than the wavelength of light emitted by the composite scintillator wherein the composite scintillator is designed to have selected properties suitable for a particular application.

The invention relates to a perovskite / polymer composite luminescent material and a preparation method thereof, which belong to the technical field of composite materials and luminescent materials, wherein the structural formula of the perovskite is R1NH3AB3 or (R2NH3)2AB4, A and B form a ligand octahedral structure, R1NH3 or R2NH3 are filled into gaps of the ligand octahedral structure which is formed through the A and the B, R1 is methyl, R2 is a long-chain organic molecular group, the A is any one of metal Ge, Sn, Pb, Cu, Mn, Sb and Bi, the B is any one of Cl, Br and I. The perovskite / polymer composite luminescent material which is made through the preparation method is high in luminescent intensity, high in luminescent color purity, excellent in light and thermal stability and excellent chemical resistant property and mechanical property, and lays the foundation for theory research and application of the perovskite / polymer composite luminescent material in high-performance photoluminescence devices, flexible display, lasers, nonlinear optical devices. The preparation method can obtain composite materials which can cover a whole visible region through luminescent wavelengths, and has wide application prospect in the fields of wide gamut light emitting diode (LED) and high performance displays and the like.

A device for holographic reconstruction of three-dimensional scenes includes optical focusing means which directs sufficiently coherent light from light means to the eyes of at least one observer via a spatial light modulator that is encoded with holographic information. The device has a plurality of illumination units for illuminating the surface of the spatial light modulator (SLM); each unit comprises a focusing element (21 / 22 / 23 or 24), and a light means (LS1 / LS2 / LS3 or LS4) that emits sufficiently coherent light such that each of these illumination units illuminates one separate illuminated region (R1 / R2 / R3 or R4) of the surface, whereby the focusing element and the light means are arranged such that the light emitted by the light means (LS1-LS4) coincides close to or at the observer eyes.

A light-emitting apparatus provides a ceramic-made base body, a frame body, a light-emitting element, a conductor layer and a light-transmitting member. The base body has on its upper surface a mounting portion for the light-emitting element. The frame body is joined to the upper surface of the base body so as to surround the mounting portion, with its inner peripheral surface shaped into a reflection surface. The wiring conductor has its one end formed on the upper surface of the base body and electrically connected to the light-emitting element, and has another end led to a side or lower surface of the base body. The light-transmitting member is disposed inside the frame body so as to cover the light-emitting element, which contains fluorescent materials for performing wavelength conversion. The base body is so designed that ceramic crystal grains range in average particle diameter from 1 to 5 μm.

The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.

A solid-state imaging device includes a color filter unit disposed on a pixel array unit including pixels two-dimensionally arranged in a matrix and a conversion processing unit disposed on a substrate having the pixel array unit thereon. The color filter unit has a color arrangement in which a color serving as a primary component of a luminance signal is arranged in a checkerboard pattern and a plurality of colors serving as color information components are arranged in the other area of the checkerboard pattern. The conversion processing unit converts signals that are output from the pixels of the pixel array unit and that correspond to the color arrangement of the color filter unit into signals that correspond to a Bayer arrangement and outputs the converted signals.

It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection efficiency is formed in contact with a nitride semiconductor layer. A semiconductor element comprises a nitride semiconductor layer, an electrode connected to said nitride semiconductor layer, and an insulating film covering at least part of said electrode, wherein the electrode comprises: a first metal film including silver or a silver alloy and in contact with the nitride semiconductor layer; and a second metal film completely covering the first metal film, and the insulating film comprises a nitride film.

PCT No. PCT / DE98 / 00827 Sec. 371 Date Nov. 17, 1998 Sec. 102(e) Date Nov. 17, 1998 PCT Filed Mar. 20, 1998 PCT Pub. No. WO98 / 43277 PCT Pub. Date Oct. 1, 1998A flat fluorescent lamp (1) has a discharge vessel (2) having a base plate (7), a top plate (8) and a frame (9) which are connected to one another in a gas-tight fashion by means of solder (10). Structures resembling conductor tracks function in the interior of the discharge vessel as electrodes (3-6), in the feedthrough region as feedthroughs, and in the external region as external supply leads (13; 14). Flat lamps of the most different sizes can thereby be produced simply in engineering terms and in a fashion capable of effective automation. Moreover, virtually any electrode shapes can be realized, in particular optimized with regard to a uniform luminous density with a reduced drop in luminous density towards the edges of the flat lamp. At least the anodes (5, 6) are covered in each case with a dielectric layer (15). The lamp (1) is preferably operated by means of a pulsed voltage source and serves as background lighting for LCDs, for example in monitors or driver information displays.

A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

High-molecular compounds comprising repeating units represented by the general formula (1) or (2) and having number-average molecular weights of 103 to 108 in terms of polystyrene: (1) [wherein Ar1 and Ar2 are each independently a trivalent aromatic hydrocarbon group or a trivalent heterocyclic group; and X1 and X2 are each independently O, S, C(═O), S(═O), SO2, C(R1)(R2), Si(R3)(R4), N(R5), B(R6), P(R7), or P(═O)(R8), with the provisos that X1 and X2 must not be the same and that X1 and Ar2 are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar1, and X2 and Ar1 are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar2] (2) [wherein Ar3 and Ar4 are each independently a trivalent aromatic hydrocarbon group or a trivalent heterocyclic group; and X3 and X4 are each independently N, B, P, C(R9), or Si(R10), with the provisos that X3 and X4 must not be the same and that X3 and Ar4 are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar3, and X4 and Ar3 are bonded respectively to the adjacent carbon atoms constituting the aromatic ring of Ar4].

Disclosed is a full spectrum sunshine simulation apparatus for developing biological growth which comprises a full spectrum light emitting diode module and a photoperiod controller. Therein, the full spectrum light emitting diode module includes a printed circuit board and a plurality of full spectrum light emitting diodes, wherein the luminescence spectrum of the full spectrum light emitting diodes has a wavelength range of 350 nm to 800 nm. The photoperiod controller, connected to the full spectrum light emitting diode module, is in charge of lighting periods of the plurality of full spectrum light emitting diodes, color temperatures and emitting angles of the lights emitted from the plurality of full spectrum light emitting diodes, thereby simulating a environment under artificial sunlight.

A light emitting device comprising a light emitting component that emits light with a first peak wavelength, and at least one sintered ceramic plate over the light emitting component is described. The at least one sintered ceramic plate is capable of absorbing at least a portion of the light emitted from said light emitting component and emitting light of a second peak wavelength, and has a total light transmittance at the second peak wavelength of greater than about 40%. A method for improving the luminance intensity of a light emitting device comprising providing a light emitting component and positioning at least one translucent sintered ceramic plate described above over the light emitting component is also disclosed.

A mechanoluminescence material comprising a mother body material and a luminescence center added to the mother body material. The mother body material is constituted of at least one kind of oxide selected from alumino silicate, aluminate, silicate, tantalate, niobate, gallium oxide, and ZrO2, and the luminescence center is at least one kind selected from a rare earth metal and a transition metal which emits light when electrons excited by mechanical energy are restored to a normal state.

One embodiment of the present invention is to provide a stress-stimulated luminescent material which has a unique crystal structure and which emits conventionally unachievable intense light. The stress-stimulated luminescent material of one embodiment of the present invention includes a basic structure in which a plurality of tetrahedral molecules each having an AlO4-like tetrahedral structure or an SiO4-like tetrahedral structure share atoms of apexes of the tetrahedral structures so as to be coupled to one another so that a basic material structure is formed and at least either alkali metal ions or alkali earth metal ions are inserted into the void are partially substituted by at least either rare earth metal ions or transition metal ions.

The invention discloses a method for highly sensitive quantitative detection of quantum dot fluorescence immunochromatographic assay. The method includes: building a fluorescence immunochromatographic assay test strip on the basis of optimizing the structure of the test strip and components by the aid of excellent fluorescent characteristics of quantum dots and by means of combining quantum dot fluorescence labeling technology and immunochromatographic assay; detecting fluorescence signal strength of a quantitative belt and a quality control belt by the aid of a fluorescence quantometer and correcting the fluorescence strength of the quantitative belt by the aid of the quality control belt after immunochromatographic assay of the test strip; and further quantitatively detecting analyte according to a standard curve obtained by the fluorescence quantometer. The method is simple, rapid, accurate, low in cost and quite high in sensitivity. Compared with a conventional colloidal gold immunochromatographic assay method, the method has the advantages of fine labeling stability, low non-specificity, high sensitivity, wide linear range and accuracy in quantization. The method is applicable to samples such as blood samples, urine samples, spittle, excrement and the like, and can be applied to detection of critical illness, poison, food safety and the like.

The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer 7 is formed of a multiple quantum well structure containing InaGa1−aN (0≦a<1). The p-cladding layer 8 is formed on said active layer containing the p-type impurity. The p-cladding layer 8 is made of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer 8 is made of single-layered layer made of AlbGa1−bN (0≦b≦1). A low-doped layer 9 is grown on the p-cladding layer 8 having a p-type impurity concentration lower than that of the p-cladding layer 8. A p-contact layer is grown on the low-doped layer 9 having a p-type impurity concentration higher than those of the p-cladding layer 8 and the low-doped layer 9.

A broad-spectrum Al(1-x-y)InyGaxN light emitting diode (LED), including: a substrate, a buffer layer, an N-type cladding layer, at least one quantum dot emitting layer, and a P-type cladding layer. The buffer layer is disposed over the substrate. The N-type cladding layer is disposed over the buffer layer to supply electrons. The quantum dot emitting layer is disposed over the N-type cladding layer and includes plural quantum dots. The dimensions and indium content of the quantum dots are manipulated to result in uneven distribution of character distribution of the quantum dots so as to increase the FWHM of the emission wavelength of the quantum dot emitting layer. The P-type cladding layer is disposed over the quantum dot emitting layer to supply holes. A broad-spectrum Al(1-x-y)InyGaxN yellow LED may thus be made from the LED structure of this invention, with an emission wavelength at maximum luminous intensity falling within a range of 530˜600 nm, and FWHM within a range of 20˜150 nm. After packaging an Al(1-x-y)InyGaxN blue LED to form a solid state white light emitting device, the mixing of blue light and yellow light would generate white light with a high CRI index, high luminous intensity and capable of various color temperature modulation.

The invention provides a nitrogen-doped high-luminescent carbon quantum dot and a preparation method thereof. The preparation method comprises the following steps: reacting by using a sodium citrate solution as a carbon source and ethanediamine as a source of N under a sealing condition, cooling an obtained product, then separating, and drying a solution obtained after separation so as to obtain the nitrogen-doped high-luminescent carbon quantum dot. The preparation method is simple in process, short in preparation period, low in manufacturing cost and good in repeatability; obtained raw materials are simple and easily available. The nitrogen-doped high-luminescent carbon quantum dot prepared by using the method is uniform in size distribution and high in luminescent density; the luminescent density of the nitrogen-doped high-luminescent carbon quantum dot is about 20 times of that of a general quantum dot, so that the application of the nitrogen-doped high-luminescent carbon quantum dot in the field of cell marking can be expanded. As the improvement of the luminescent density is caused by nitrogen doping, the nitrogen-doped high-luminescent carbon quantum dot prepared by the method has unique application when being used for detecting whether N exists in environments.

Luciferase enzymes with greatly increased thermostability, e.g., at least half lives of 2 hours at 50° C., cDNAs encoding the novel luciferases, and hosts transformed to express the luciferases, are disclosed. Methods of producing the luciferases include recursive mutagenesis. The luciferases are used in conventional methods, some employing kits.

A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

Luciferase enzymes with greatly increased thermostability, e.g., at least half lives of 2 hours at 50° C., cDNAs encoding the novel luciferases, and hosts transformed to express the luciferases, are disclosed. Methods of producing the luciferases include recursive mutagenesis. The luciferases are used in conventional methods, some employing kits.

A Light Emitting Diode (LED) package including a carrier, a package housing, an LED chip, and an electrostatic discharge protector (ESD protector) is provided. The package housing encapsulates a part of the carrier so as to provide a chip-accommodating space on the carrier. The LED chip disposed on the carrier and located in the chip-accommodating space is electrically connected to the carrier. The ESD protector disposed on the carrier and encapsulated by the package housing is electrically connected to the carrier. The LED package has excellent light-emitting intensity, since the light emitted from the LED chip is not absorbed by the ESD protector encapsulated by the package housing. Additionally, a fabricating method of the LED package is also provided.

The invention discloses a quantum dot multicolor marking method for quantitative detection of various cardiovascular disease markers and a kit of troponin I / creatine kinase isoenzyme / myohemoglobin. The method realizes fluorescent quantitative detection by utilizing excellent fluorescent properties of quantum dots and combining a multicolour marking technology and an immunochromatographic assay on the basis of optimizing each component of a test strip. Compared with the common collaurum immunochromatographic assay, the method has the advantages of good mark stability, low nonspecificity, high sensitivity, wide linear range, small cross interference, and accuracy in quantification. The kit disclosed by the invention is used for carrying out quantification detection on the troponin I, the creatine kinase isoenzyme and the myohemoglobin simultaneously, is suitable for detection of whole blood, blood serum and plasma samples, can provide a reference for cardiovascular and cerebrovascular disease diagnosis, and is widely applied to primary hospitals and clinics.

The invention belongs to the technical field of organic luminescence materials. The gathering luminescence material of the invention contains a triphenyl thylene structure, ketone carbonyl is converted into double bonds by substituent phenyl ketone through a Wittig reaction or a Wittig-Horner reaction during synthesis, and the triphenyl thylene structure is formed and then is connected with otheraromatic base groups. The synthesis method has simple technique and easy purification, and the synthesized organic luminescence material containing the triphenyl thylene structure not only has obvious gathering induced luminescence performance, high thermal stability, high vitrifaction transformation temperature and high luminescence intensity, but also is suitable for preparing a luminescence layer material in an organic electroluminescence material component; by introducing proper base groups, and the organic luminescence material also can be used as a fluorescent probe and organic solar battery sensitizing dyestuff.

A fluorescent substance is obtained by weighing and mixing CaS, Ga2S3, EuS and Ce2S3 in a mole ratio of (1-x):a:x:y (wherein 0.001≦x≦0.2, 0.0001≦y≦0.02 and 0.5≦a≦5) and by sintering the mixture. A light-emitting diode comprises an LED chip 2 and an LED chip sealing portion 5, made of silicone resin and including the fluorescent substance, for enclosing the LED chip 2. Hence, a fluorescent substance that is excited by light having a predetermined wavelength to emit light, a light-emitting diode having excellent luminous efficiency and luminous intensity, and a method for producing the fluorescent substance are attained by the present invention.