536results about How to "Increase the resistance value" patented technology

An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

A semiconductor memory device comprising a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance is changed by applying a voltage pulse between the electrodes comprises at least one reaction preventing film made of a material having an action of blocking the permeation of a reduction species promoting a reduction reaction of the variable resistor and an oxidation species promoting an oxidation reaction of the variable resistor. This prevents the resistance value of the variable resistance element from fluctuating due to a reduction reaction or an oxidation reaction of the variable resistor caused by hydrogen or oxygen existing in the manufacturing steps, so that a semiconductor memory device having a small variation of the resistance value and having a good controllability can be realized with good repeatability.

A threaded fastener has a substantially single helical thread formed upon a shank portion thereof, and a plurality of substantially saw-blade type or serrated teeth are formed upon crest portions of leading ones of individual thread portions of the helical thread. The threads of the threaded screw fastener are also characterized by means of predetermined flank angles, and such flank angles, in conjunction with the saw-blade type or serrated teeth, permit the threaded screw fastener of the present invention to be utilized within any one of a multiplicity of substrates, such as, for example, wood, metal, thermoplastics, composite materials, concrete, hard aggregate, or the like.

The present invention relates to an interchangeable holder system comprising a basic module and an interchangeable holder for the accommodation of a cutting tool, which interchangeable holder is capable of being attached to the basic module, for the purpose of preparing ground surfaces, and to a construction machine, more particularly a stabilizer, a recycler, or a cold milling machine, comprising a milling device comprising such an interchangeable holder system.

The invention provides a digital closed loop type optical fiber current sensor. A modulation signal of a light wave phase modulator of a sensor optical path system is an amplitude modulation square wave; a signal processing system extracts any harmonic wave of amplitude modulation square wave current output by a photoelectric transducer and extracts tested current information from the current; a pre-amplifier of the signal processing system is a transimpedance amplifier TIA, and the bandwidth is below 1 / 650 when the square wave transient amplitude value (prior art) is directly extracted from the amplitude modulation square wave, so that thermal noise output by the pre-amplifier and the shot noise level are also reduced to be below 1 / 650 of the prior art; and current-voltage conversion gain of the transimpedance amplifier TIA is not determined by the resistance of a feedback network of the TIA, so that a low-resistance resistor is adopted in the feedback network of the TIA while the high current-voltage conversion gain is ensured, and the thermal noise of the resistor which accounts for a significant proportion in the level of the noise output by the TIA is reduced to be negligible.

A control system for selectively isolating a power supply from a common bus is provided. The control system comprises a connection to an output path of an output signal of the power supply and a resistive element providing a variable resistance between an input terminal and an output terminal. The input terminal is connected to the connection and the output terminal is connected to the common bus. The resistive element further comprises a control terminal allowing adjustment of the variable resistance. A control element provides a control signal to the control terminal; the control element is responsive to current flowing between the output path and the common bus.

The present invention relates to a semiconductor device which includes a photoelectric conversion layer; an amplifier circuit amplifying an output current of the photoelectric conversion layer and including two thin film transistors; a first terminal supplying a high-potential power supply voltage; a second terminal supplying a low-potential power supply voltage; an electrode electrically connecting the two thin film transistors and the photoelectric conversion layer; a first wiring electrically connecting the first terminal and a first thin film transistor which is one of the two thin film transistors; and a second wiring electrically connecting the second terminal and a second thin film transistor which is the other of the two thin film transistors. In the semiconductor device, the value of voltage drop of the first wiring and the second wiring are increased by bending the first wiring and the second wiring.

In a semiconductor device, a surge voltage is lowered on turning OFF of a switching element, and output current is reduced on turning ON of the switching element in a non-saturated condition to achieve a reduced amount of self-heating. The semiconductor device can comprise a semiconductor switching element, an overvoltage protection circuit, and a resistance circuit to transmit a control signal for turning the switching element ON and OFF to a control terminal of the switching element. The semiconductor device can further comprise a voltage detecting switch that receives a signal corresponding to a voltage appearing at the output terminal of the switching element on turning OFF of the switching element, and a gate resistor change-over switch that operates according to a voltage of a timing capacitor connected to the output side of the voltage detecting switch to increase a resistance value of the resistance circuit.

The related over-voltage protector for high-power motor comprises: three ZnO arresters with cathode paralleled together and connected to ground terminal and anode connected to three-phase terminal, three groups of R-C devices with two ends connected to ground terminal and arrester another end respectively. This invention can reduce damage rate of high-power motor and transformer to 2%.

An electric element comprises: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).

A thin film magnetic head is disclosed that is capable of preventing the contact between an element portion and a recording medium and a variation in the amount of protrusion of the element portion. A thin film magnetic head includes: a reproducing element; a recording element that is formed on the reproducing element; a heater that is supplied with power and generates heat to expand at least one of the reproducing element and the recording element such that the reproducing element and / or the recording element protrude toward a recording medium; and a temperature correcting resistor that is connected in parallel to the heater and has a negative resistance temperature coefficient.

A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

An electrostatic discharge protection element and a protection resistor, which are formed on an N-drain region with a field oxide film interposed therebetween for the purpose of preventing electrical breakdown of a field effect transistor, are composed as a stacked bidirectional Zener diode of one or a plurality of N+ polycrystalline silicon regions of a first layer and a P+ polycrystalline silicon region of a second layer, and a stacked resistor of one or a plurality of N+ resistor layers of the first layer and an N+ resistor layer of the second layer, respectively. One end of the plurality of N+ polycrystalline silicon regions of the first layer is connected to an external gate electrode terminal, and the other end is connected to a source electrode. One end of the plurality of N+ resistor layers of the first layer is connected to a gate electrode, and the other end is connected to the external gate electrode terminal. Semiconductor regions of the first layer and the second layer are formed by using semiconductor films, which form a hetero semiconductor region and the gate electrode, respectively.

A threaded fastener has a substantially single helical thread formed upon a shank portion thereof, and a plurality of substantially saw-blade type or serrated teeth are formed upon crest portions of leading ones of individual thread portions of the helical thread. The threads of the threaded screw fastener are also characterized by means of predetermined flank angles, and such flank angles, in conjunction with the saw-blade type or serrated teeth, permit the threaded screw fastener of the present invention to be utilized within any one of a multiplicity of substrates, such as, for example, wood, metal, thermoplastics, composite materials, concrete, hard aggregate, or the like.

A DC conversion apparatus comprises a first transformer, a second transformer, a parallel circuit having series circuits connected in parallel, one of the series circuits including a reactor and a primary winding of the first transformer, the other series circuit including a reactor and a primary winding of the second transformer, a conversion circuit converting a DC voltage of a DC power source into an AC voltage and outputting it to the parallel circuit, a first rectifying-smoothing circuit rectifying and smoothing a first voltage generated by a first secondary windings of the first transformer into a first DC output, and a second rectifying-smoothing circuit rectifying and smoothing a second voltage generated by a first secondary windings of the second transformer into a second DC output that is different from the first voltage. The second secondary windings of the first transformer are connected in parallel with the first secondary windings of the second transformer.

A semiconductor device includes a semiconductor substrate of a first conductivity-type, a buried diffusion layer of a second conductivity-type formed in the semiconductor substrate, a first well of the second conductivity-type having a bottom portion in contact with a top portion of the buried diffusion layer, the first well having an annular shape in a planar view, and a second well of the first conductivity-type formed to be surrounded by the first well. The semiconductor device further includes a diffusion region formed between a first portion of the second well and a second portion of the second well, the diffusion region having an impurity concentration lower than that of the second well, so that a depletion layer formed in the diffusion region can be provided, a transistor formed on the second well to function as an ESD (electro-static discharge) protection element, and an external terminal connected to a drain of the transistor.

In a method of measuring the throughflow of a gas mixture, the gas mixture flows past a flow sensor which includes a heating device and a first temperature probe reacting to the temperature of the heating device. A temperature, which is characteristic of the temperature of a liquid above which the gas mixture stands as vapor, is measured with a second temperature probe. A first measurement signal characterizing the composition of the gas mixture and thus its heat dissipation capacity is produced using the known vapor-pressure curve of the liquid and the temperature of the liquid. A second measurement signal characterizing the throughflow of the gas mixture is produced using the heating power supplied to the heating device, the temperature of the first temperature probe and the first measurement signal. The method can be used when monitoring the gas return to a filling system and when controlling the gas pump used therein.

A high-speed switching circuit with a low or zero inductance shunt resistor is constructed using a trace resistor having parallel overlying trace portions on opposite plane faces of a printed circuit board. The resulting shunt resistor is used in combination with a detector to input data to a microcontroller which controls an automotive load device such as a blower motor. The traces which form the resistor may be extended by horizontal or vertical zig-zag folding or a combination of the two.

A method of treating the surface of a metal base which is conducted prior to cationic electrodeposition coating and is used for improving throwing power in the cationic electrodeposition coating; a metallic material treated by the surface treatment method; and a method of coating this metallic material.

The invention provides a solid electrolytic capacitor which comprises a capacitor element including an anode body having an anode leading member, and a dielectric coating layer, a solid electrolyte layer and a cathode leading layer which are formed successively over a surface of the anode body. The anode leading member has an anode terminal member connected thereto, the cathode leading layer has a cathode terminal member connected thereto, and the capacitor element is covered with a packaging resin portion. The cathode terminal member is connected to the cathode leading layer with current control means provided therebetween. The current control means comprises a current control layer reversibly increasable in electrical resistance with overcurrent or excessive heat, and a pair of electrode members each in the form of a plate or foil and having the current control layer sandwiched therebetween. The electrode members are joined to the cathode leading layer and the cathode terminal member, respectively.

An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second regions having different types of dopants. In one example, the first region has an N-type dopant and the second region has a P-type dopant. The polysilicon layer can also include a third region in between the first and second regions, which also has a different dopant. During a fusing event, a distribution of temperature peaks around the regions of different dopants. By locating regions of different dopants within the fuse neck, agglomeration of the silicide layer starts reliably within the fuse neck (for example, at or near the center of the fuse neck) and proceeds toward the contact regions. An improved post fuse resistance distribution and an increased minimum resistance value in the post fuse resistance distribution is realized compared to conventional polysilicon fuses.

The invention concerns a heating element for a hot air device with a heating resistor located in an airflow that comprises at least one air channel for the airflow, and with a heating conductor for converting electric energy to heat, and with a carrier element of thermally stable material for the heating conductor. Essentially, the heating resistor is made entirely of ceramic material. The carrier element has an electrically insulating ceramic material, and the heating conductor has an electrically conductive ceramic material. The ceramic materials of the carrier element and of the heating conductor are connected to each other with full surface-to-surface contact.

An optical signal receiving circuit has a current-voltage converting circuit which receives the output current signal of a photoelectric converting circuit, converting an optical signal into the current signal, and converts the current signal into a voltage signal. A differential circuit in the subsequent stage to the current-voltage converting circuit uses a resistor as its current source to facilitate setting of an operating voltage level in the circuit. To eliminate an adverse effect of asymmetry of the output waveform from the differential circuit due to the use of the resistor, the reference voltage level as the other input to the reference circuit is generated from the output voltage signal of the current-voltage converting circuit by a voltage generating circuit incorporating a feed-forward-controlling connection. Thus, coexistence of high bandwidth characteristics and broad dynamic range having so far been difficult to attain by low voltage apparatus can be realized.

Disclosed is a growth method of a light-emitting diode (LED) epitaxial wafer. When growth of an N type doped gallium nitride (GaN) layer with silicon (Si) is carried out, a method of alternate growth of the N type doped GaN layer with Si and a U type undoped GaN layer with no Si is adopted. According to the growth method of the LED epitaxial wafer, the thickness of an original N type GaN layer is kept, a doped GaN layer with Si with continuous growth in a traditional growth method is modified into an alternate structure layer formed by the N type doped GaN layer with Si and a U type GaN layer with no doped Si, and usage amount of dopant is saved to a certain degree. In an alternate structure of the N type doped GaN layer with Si and the U type undoped GaN layer with no Si, the doped GaN lay with Si is low in resistance value, and the undoped GaN layer with no Si is high in resistance value. Due to the facts that the doped GaN layer with Si is low in resistance value, and the undoped GaN layer with no Si is high in resistance value, horizontal expansion capacity of electrons is strengthened, and thus a driving voltage is reduced, and meanwhile luminance and a lighting effect are improved.

The invention relates to a preparation method for a carbon / a carbon heating unit with high resistance and high purity; in the method, carbon cloth and short carbon fiber web fetus are adopted to be alternately laminated or wound into a cylinder to form horizontal fabric which is added with vertical fabric along the thickness direction by adopting a needling technique to prepare a prefabricated body of the heating unit with a three-direction structure; the prefabricated body is processed with furfural acetone resin or phenolic resin vacuum pressure impregnation and curing treatment, charring at normal pressure and other densification techniques until the density reaches 1.55g / cm<3> and then high-temperature vacuum purification is carried out below 2,000 DGE C and the carbon / the carbon heating unit with high resistance and high purity can be produced after mechanical processing. The carbon / the carbon heating unit of the invention has outstanding features of high resistance and high purity and has the advantages of short production period, low production period and long service life, which is mainly applicable to a U-shaped heating unit of a polysilicon hydrogenation furnace as well as a large cylindrical heating unit of a polysilicon pulling furnace.

Provided is a solar cell module capable of restraining a decrease in the module output. In the solar cell module, a plurality of solar cells are arranged between a light-receiving surface protection member 40 and a back-surface protection member 60, and electrodes 10, 30 of the solar cells are electrically connected to each other through wiring members 70. Each of the electrodes 10, 30 includes a bus bar electrode formed of a resin-type conductive paste. The solar cell module includes an adhesive layer made of a resin 90 between the bus bar electrode and the wiring member 70. Moreover, the residual stress of the resin 90 of the adhesive layer is smaller than the residual stress of a resin contained in the bus bar electrode.

A vibratory pile hammer for a cast-in-situ bellout wedge-shaped reinforced concrete pile and a construction method belong to the technical field of construction pile foundations. The lower part of a vibratory head of the vibratory pile hammer is jointed with the upper part of a wedge-shaped steel sleeve by a steel cover plate with a round hole. The lower end of the wedge-shaped steel sleeve is connected with a valve pile shoe. The vibratory head is started to downwardly drive the wedge-shaped steel sleeve and the valve pile shoe to be hammered into a foundation. A dry and hard concrete solid filler is filled into the inner cavity of the wedge-shaped steel sleeve through a feeding port. An expanded head is formed by tamping and hammering. A steel reinforcement cage is lowered down. Concreteis cast. The vibratory head vibrates to drive the wedge-shaped steel sleeve to be pulled out upwardly so as to form a wedge-shaped pile body and then finally form the bellout wedge-shaped reinforcedconcrete pile. Compared with existing shaped piles with uniform sections, the pile saves the concrete and improves the pile-side positive frictional resistance, and the expanded head of the pile effectively improves the resistance value at a pile end and can effectively reduce the influence brought by negative frictional resistance to the pile body. The processing depth of the vibratory pile hammer can be up to approximately 30m, the process of the vibratory pile hammer is simple, highly efficient and strongly operable, facilitates control and detection and has high single pile bearing capacity.