525results about How to "Increase the resistance value" patented technology

A semiconductor memory device comprising a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance is changed by applying a voltage pulse between the electrodes comprises at least one reaction preventing film made of a material having an action of blocking the permeation of a reduction species promoting a reduction reaction of the variable resistor and an oxidation species promoting an oxidation reaction of the variable resistor. This prevents the resistance value of the variable resistance element from fluctuating due to a reduction reaction or an oxidation reaction of the variable resistor caused by hydrogen or oxygen existing in the manufacturing steps, so that a semiconductor memory device having a small variation of the resistance value and having a good controllability can be realized with good repeatability.

A terminal is provided on a first face of a conductive plate member. A holder member holds a shielded wire therein. The holder member is provided with a conductive part. The holder member is attached on a second face of the plate member, so that the shielded wire is electrically connected to the terminal. A resilient contact member is interposed between the holder member and the second face of the plate member. The contact member includes a flat face portion which is brought into surface contact with at least one of the conductive part of the holder member and the second face of the plate member.

The present invention relates to an interchangeable holder system comprising a basic module and an interchangeable holder for the accommodation of a cutting tool, which interchangeable holder is capable of being attached to the basic module, for the purpose of preparing ground surfaces, and to a construction machine, more particularly a stabilizer, a recycler, or a cold milling machine, comprising a milling device comprising such an interchangeable holder system.

A control system for selectively isolating a power supply from a common bus is provided. The control system comprises a connection to an output path of an output signal of the power supply and a resistive element providing a variable resistance between an input terminal and an output terminal. The input terminal is connected to the connection and the output terminal is connected to the common bus. The resistive element further comprises a control terminal allowing adjustment of the variable resistance. A control element provides a control signal to the control terminal; the control element is responsive to current flowing between the output path and the common bus.

The present invention relates to a semiconductor device which includes a photoelectric conversion layer; an amplifier circuit amplifying an output current of the photoelectric conversion layer and including two thin film transistors; a first terminal supplying a high-potential power supply voltage; a second terminal supplying a low-potential power supply voltage; an electrode electrically connecting the two thin film transistors and the photoelectric conversion layer; a first wiring electrically connecting the first terminal and a first thin film transistor which is one of the two thin film transistors; and a second wiring electrically connecting the second terminal and a second thin film transistor which is the other of the two thin film transistors. In the semiconductor device, the value of voltage drop of the first wiring and the second wiring are increased by bending the first wiring and the second wiring.

In a semiconductor device, a surge voltage is lowered on turning OFF of a switching element, and output current is reduced on turning ON of the switching element in a non-saturated condition to achieve a reduced amount of self-heating. The semiconductor device can comprise a semiconductor switching element, an overvoltage protection circuit, and a resistance circuit to transmit a control signal for turning the switching element ON and OFF to a control terminal of the switching element. The semiconductor device can further comprise a voltage detecting switch that receives a signal corresponding to a voltage appearing at the output terminal of the switching element on turning OFF of the switching element, and a gate resistor change-over switch that operates according to a voltage of a timing capacitor connected to the output side of the voltage detecting switch to increase a resistance value of the resistance circuit.

The related over-voltage protector for high-power motor comprises: three ZnO arresters with cathode paralleled together and connected to ground terminal and anode connected to three-phase terminal, three groups of R-C devices with two ends connected to ground terminal and arrester another end respectively. This invention can reduce damage rate of high-power motor and transformer to 2%.

An electric element comprises: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).

A thin film magnetic head is disclosed that is capable of preventing the contact between an element portion and a recording medium and a variation in the amount of protrusion of the element portion. A thin film magnetic head includes: a reproducing element; a recording element that is formed on the reproducing element; a heater that is supplied with power and generates heat to expand at least one of the reproducing element and the recording element such that the reproducing element and/or the recording element protrude toward a recording medium; and a temperature correcting resistor that is connected in parallel to the heater and has a negative resistance temperature coefficient.

A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

A threaded fastener has a substantially single helical thread formed upon a shank portion thereof, and a plurality of substantially saw-blade type or serrated teeth are formed upon crest portions of leading ones of individual thread portions of the helical thread. The threads of the threaded screw fastener are also characterized by means of predetermined flank angles, and such flank angles, in conjunction with the saw-blade type or serrated teeth, permit the threaded screw fastener of the present invention to be utilized within any one of a multiplicity of substrates, such as, for example, wood, metal, thermoplastics, composite materials, concrete, hard aggregate, or the like.

A semiconductor device includes a semiconductor substrate of a first conductivity-type, a buried diffusion layer of a second conductivity-type formed in the semiconductor substrate, a first well of the second conductivity-type having a bottom portion in contact with a top portion of the buried diffusion layer, the first well having an annular shape in a planar view, and a second well of the first conductivity-type formed to be surrounded by the first well. The semiconductor device further includes a diffusion region formed between a first portion of the second well and a second portion of the second well, the diffusion region having an impurity concentration lower than that of the second well, so that a depletion layer formed in the diffusion region can be provided, a transistor formed on the second well to function as an ESD (electro-static discharge) protection element, and an external terminal connected to a drain of the transistor.

In a method of measuring the throughflow of a gas mixture, the gas mixture flows past a flow sensor which includes a heating device and a first temperature probe reacting to the temperature of the heating device. A temperature, which is characteristic of the temperature of a liquid above which the gas mixture stands as vapor, is measured with a second temperature probe. A first measurement signal characterizing the composition of the gas mixture and thus its heat dissipation capacity is produced using the known vapor-pressure curve of the liquid and the temperature of the liquid. A second measurement signal characterizing the throughflow of the gas mixture is produced using the heating power supplied to the heating device, the temperature of the first temperature probe and the first measurement signal. The method can be used when monitoring the gas return to a filling system and when controlling the gas pump used therein.

A method of treating the surface of a metal base which is conducted prior to cationic electrodeposition coating and is used for improving throwing power in the cationic electrodeposition coating; a metallic material treated by the surface treatment method; and a method of coating this metallic material.

The invention provides a solid electrolytic capacitor which comprises a capacitor element including an anode body having an anode leading member, and a dielectric coating layer, a solid electrolyte layer and a cathode leading layer which are formed successively over a surface of the anode body. The anode leading member has an anode terminal member connected thereto, the cathode leading layer has a cathode terminal member connected thereto, and the capacitor element is covered with a packaging resin portion. The cathode terminal member is connected to the cathode leading layer with current control means provided therebetween. The current control means comprises a current control layer reversibly increasable in electrical resistance with overcurrent or excessive heat, and a pair of electrode members each in the form of a plate or foil and having the current control layer sandwiched therebetween. The electrode members are joined to the cathode leading layer and the cathode terminal member, respectively.

An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second regions having different types of dopants. In one example, the first region has an N-type dopant and the second region has a P-type dopant. The polysilicon layer can also include a third region in between the first and second regions, which also has a different dopant. During a fusing event, a distribution of temperature peaks around the regions of different dopants. By locating regions of different dopants within the fuse neck, agglomeration of the silicide layer starts reliably within the fuse neck (for example, at or near the center of the fuse neck) and proceeds toward the contact regions. An improved post fuse resistance distribution and an increased minimum resistance value in the post fuse resistance distribution is realized compared to conventional polysilicon fuses.

The invention relates to a preparation method for a carbon/a carbon heating unit with high resistance and high purity; in the method, carbon cloth and short carbon fiber web fetus are adopted to be alternately laminated or wound into a cylinder to form horizontal fabric which is added with vertical fabric along the thickness direction by adopting a needling technique to prepare a prefabricated body of the heating unit with a three-direction structure; the prefabricated body is processed with furfural acetone resin or phenolic resin vacuum pressure impregnation and curing treatment, charring at normal pressure and other densification techniques until the density reaches 1.55g/cm<3> and then high-temperature vacuum purification is carried out below 2,000 DGE C and the carbon/the carbon heating unit with high resistance and high purity can be produced after mechanical processing. The carbon/the carbon heating unit of the invention has outstanding features of high resistance and high purity and has the advantages of short production period, low production period and long service life, which is mainly applicable to a U-shaped heating unit of a polysilicon hydrogenation furnace as well as a large cylindrical heating unit of a polysilicon pulling furnace.

The present invention provides a transparent conductive material with little change in electric resistance under influence of temperature or humidity and a transparent conductive membrane using the same.

The transparent conductive material of the present invention includes a resin, a transparent conductive particle, a silica material containing at least either of a silica particle or a precursor of silica particle, and a silane coupling agent.