79 results about "Electrical breakdown" patented technology

The invention relates to the technical field of power cables, in particular to a high-toughness polyethylene insulated power cable and a preparation method thereof. The invention relates to a preparation method of a high-toughness polyethylene insulated power cable. The preparation method comprises the following steps: preparation of a toughening flame-retardant modifier, preparation of a montmorillonite compound, preparation of a toughening modified montmorillonite compound and preparation of the polyethylene insulated power cable. Through specific material mixing and grafting modification, the performance of the cable insulation layer is remarkably improved. The deep trapped charge trapping capability is enhanced, space charge accumulation and electric field distortion are avoided, the DC voltage level and the operation safety are improved, and the dielectric loss and the aging speed are reduced; the dispersibility of montmorillonite is also optimized, a physical reinforcing network is formed, and the mechanical property and the electric breakdown resistance are improved; meanwhile, toughening and flame retardance are coordinated, the problem of embrittlement caused by a traditional flame retardant is solved, and the service life of the insulating layer is comprehensively prolonged.

The utility model provides a dielectric breakdown measurement circuit and a semiconductor detection device. The dielectric breakdown measurement circuit includes: an adjustable voltage source; the first end of the divider resistor is electrically connected with the adjustable voltage source, and the second end of the divider resistor serves as a voltage division output end; the tested circuit is electrically connected with the partial voltage output end; the input end of the detection circuit is electrically coupled to the voltage division output end, and the detection circuit is configured to convert a signal of the voltage division output end into a detection signal. In the breakdown process of the to-be-detected wafer, the change condition of the signal of the partial pressure output end is detected so as to reflect the breakdown degree of the to-be-detected wafer at any time, intermittent dielectric breakdown of the wafer can be prevented, electric breakdown and overlong detection time are further prevented, and the electric breakdown efficiency, the wafer electrostatic discharge efficiency and / or the wafer detection efficiency are remarkably improved. The voltage provided by the adjustable voltage source can also be used as a breakdown voltage, so that an extra electric breakdown circuit is not independently provided for the wafer to be tested.

This invention discloses a high-voltage ceramic capacitor with a reinforced concave structure, aiming to solve the problem of insufficient edge breakdown withstand voltage in traditional ceramic capacitors due to edge effects. The capacitor includes a ceramic core composed of a ceramic dielectric. Its innovation lies in the fact that the upper and lower electrode surfaces of the ceramic core are not planar, but rather form a concave structure that curves inward from the center, causing the ceramic body thickness to gradually increase from the center to the edge. This structure significantly improves the edge breakdown withstand capability through the synergistic effect of electric field homogenization and improved molding density. This invention significantly improves the power frequency withstand voltage of the capacitor to over 3.5kV per millimeter, while also exhibiting excellent comprehensive electrical performance such as low loss, high insulation, and high partial discharge initiation voltage. Furthermore, the manufacturing process is simple, does not increase volume, and has strong industrial applicability.

The composite filler filler forms a core-shell structure composed of a core substance made of carbon, metal, zinc oxide or zirconium oxide and a shell substance attached to a surface of the core substance. The shell substance is formed from fumed oxide particles, the fumed oxide particles being attached to a part or a whole of the surface of the core substance by mixing of the fumed oxide particles and the core substance in a dry ball mill. The fumed oxide particles are particles changed from bulky aggregated particles to gathered bulk particle. In the composite filler, percentage of the core substance ranges from 30 vol % to 85 vol % and percentage of the shell substance ranges from 15 vol % to 70 vol %, a thermal conductivity is 0.075 W / m·K or more, a volume resistivity is 1.0×105 Ω·cm or more, and a dielectric breakdown voltage is 1 kV / mm or more.

This application relates to an aerosol generator for an aerosol supply device. The aerosol generator comprises an aerosol generating material and a resistance heating layer comprising a resistance heating element. The resistance heating element is configured to heat at least a portion of the aerosol generating material, and the aerosol generating material is located in the resistance heating layer. The resistance heating element comprises a first type of electrical contact and a second type of electrical contact, and the resistance heating element extends between the first type of electrical contact and the second type of electrical contact. The resistance heating element has a dielectric breakdown voltage, and when the dielectric breakdown voltage is exceeded, the resistance heating element is disabled in response to a control signal.

The invention relates to the technical field of biosensors, and particularly discloses a preparation method of a multi-channel solid nanopore array. The method comprises the following steps: respectively constructing a group of parallel and independent micro-channels on the front and back surfaces of a chip prepared with a suspended dielectric film window array, enabling the micro-channels on the two surfaces to be orthogonally arranged in space, integrating an independent electrode in each micro-channel, and injecting electrolyte; the electrodes of the micro-channel on one side and the electrodes of the micro-channel on the other side are selectively connected through an external control circuit, namely controllable electric fields can be established on the two sides of the thin film window at the unique intersection point corresponding to the electrodes, so that addressing and selective dielectric breakdown of the window are achieved, all the windows on the whole chip are automatically and sequentially addressed, traversed and processed, and the yield of the chip is improved. And forming a nanopore array. By means of the method, a large number of nanopore arrays can be controllably manufactured on a single chip at a time, and nanopore array machining with high throughput, low cost and high consistency is achieved.

A disclosed electron source includes: (A) a graphene layer having an electron emission area on a surface of the graphene layer; and (B) a p-type semiconductor layer that is in direct contact with the graphene layer and forms a Schottky junction with the graphene layer. In this way, the electrons are accelerated in the depletion layer in the p-type semiconductor layer. Moreover, unlike the MIS type electron source, since the electrons are not accelerated in the insulator layer, the dielectric breakdown caused by a large number of electrons travelling in the valence band of the insulator does not occur, and a long lifespan electron source can be realized. Note that the aforementioned p-type semiconductor layer preferably has a depletion layer having a width of 2.91 nm or more and 30 nm or less.

This application discloses an insulating assembly, an electrical connector, and a vehicle. The insulating assembly includes an insulating pad with opposing first and second insulating surfaces, the second insulating surface being adapted to face a circuit board. The insulating pad also includes clearance holes and insulating elements. The clearance holes connect the first and second insulating surfaces and are used for transmitting conductive devices. The insulating elements are at least disposed on the second insulating surface and between adjacent clearance holes. The insulating assembly of this application can prevent electrical breakdown and creepage of conductive devices within the vehicle during use.

This utility model relates to a multifunctional thermally conductive coating. The thermally conductive coating includes, from bottom to top, a base layer for adhesion, a thermally conductive layer forming a thermally conductive network structure, an insulating layer that increases dielectric breakdown voltage, and a heat dissipation layer that accelerates heat dissipation and reduces interfacial thermal resistance. This multifunctional thermally conductive coating, through the adhesion of the base layer, enables effective connection between the coating and thermally conductive pads. Simultaneously, the thermally conductive layer, insulating layer, and heat dissipation layer contribute to high thermal conductivity, thus achieving a balance between thermal conductivity and adhesion, improving the functionality of the thermally conductive coating. Furthermore, the heat dissipation layer can be connected to heat dissipation devices, further enhancing the balance between thermal conductivity and adhesion.

One objective of the present disclosure is to provide a structure for a semiconductor device in which the reliability of the device is improved without causing an electrical loss during operation of a semiconductor element. A semiconductor device (51) of the present disclosure comprises a conductive heat dissipation component (4). The heat dissipation component (4) has a plurality of column sub-regions (4b) and a plate sub-region (4a) provided between the plurality of column sub-regions (4b). The heat dissipation component (4) is provided at a distance from the plurality of semiconductor elements (6) such that a sealing resin layer (8) between the heat dissipation component (4) and the plurality of semiconductor elements (6) does not cause dielectric breakdown during excitation operation of the plurality of semiconductor elements (6).Furthermore, the heat dissipation component (4) is electrically isolated from the majority of semiconductor elements (6).

The invention discloses a method and device for generating charged microparticles through ultrasonic atomization water filtration, and the method comprises the steps: atomizing a liquid medium in a first liquid storage cavity through ultrasonic oscillation, and generating primary atomized gas containing the charged microparticles; the airflow power is provided, and the primary atomized gas is guided to the second liquid storage cavity through the conveying channel; the primary atomized gas enters and penetrates through a liquid medium layer stored in a second liquid storage cavity, large-particle liquid drops in the primary atomized gas are filtered out through the liquid medium layer, and purified gas with tiny charged particles escapes from the liquid level; and finally, discharging the purified gas escaping from the liquid level. According to the device, ultrasonic atomization and water filtration are combined, large-particle water mist is intercepted through the liquid medium layer, only nanoscale charged microparticles are output, high-concentration negative oxygen ions are generated, meanwhile, strong oxidizing by-products such as ozone and nitric oxide which are inevitably generated by adopting a high-voltage discharge structure are avoided, and the device has the advantages that the device is simple in structure and convenient to operate. And the potential safety hazard that high-voltage static breaks through air is eliminated.

Disclosed is a shock wave generation method, comprising the following steps: a boost module (11) charging an energy storage capacitor (C1); when the voltage of the energy storage capacitor (C1) reaches a set value, the boost module (11) stopping charging the energy storage capacitor (C1), and the energy storage capacitor (C1) charging an energy relay capacitor (C2) and a shock wave electrode (31); and when the voltage across the shock wave electrode (31) reaches the breakdown voltage of the shock wave electrode (31), the energy relay capacitor (C2) stopping charging and discharging to the shock wave electrode (31), the energy storage capacitor (C1) continuing to discharge to the shock wave electrode (31), and the shock wave electrode (31) discharging, thereby causing breakdown and releasing a shock wave. Further provided is a shock wave system for implementing the shock wave generation method. By means of increasing the peak value and pulse width of a pulse current formed by a circuit where the shock wave electrode (31) is located when the shock wave electrode (31) releases the shock wave, that is, increasing the pulse energy of the pulse current, the shock wave energy released by the shock wave from the shock wave electrode (31) is effectively increased, and the dependence of the shock wave energy on the electrode structure is also avoided.

According to one aspect of the present invention, a thin film separator with improved insulation properties and a preparation method thereof are provided. According to one aspect of the present invention, the separator can have an advantage of implementing a dielectric breakdown voltage of 1,000 V or less while having a thickness of 8 μm or less. To this end, according to one aspect of the present invention, the separator having a controlled maximum pore size within a polymer substrate and a preparation method thereof are provided.

Apparatus for generating a plasma via the transient hollow cathode discharge effect is disclosed. The apparatus comprises a chamber comprising an inlet through which gas may enter the chamber and an outlet through which the gas may exit the chamber, a cathode electrode disposed in the chamber, the cathode electrode comprising a plurality of hollow cathodes, an anode electrode spaced apart from the cathode, a power supply, and a power supply controller configured to reduce a power level of the electrical power below a level required to maintain the plasma at the plurality of hollow cathodes, after electrical breakdown has occurred. Each hollow cathode comprises a through-thickness hole through which the gas may pass from one side of the cathode electrode to another side of the cathode electrode. A modular apparatus is also disclosed, comprising a plurality of plasma reactor modules arranged in series and / or in parallel.

The application discloses a capacitor fault identification method and related device, and the method comprises the following steps: acquiring an original running voltage signal in the running process of a capacitor; identifying a fault phase of the capacitor running according to the original running voltage signal through a preset wavelet transform method; inputting the original running voltage signal into a preset multi-core SVM model to perform signal decoupling operation, and obtaining a voltage positive sequence transient component and a voltage negative sequence transient component; after extracting a voltage instantaneous value in the voltage positive sequence transient component, calculating an identification parameter according to the voltage instantaneous value and a preset steady-state voltage value; judging a capacitor fault category according to the identification parameter and a parameter threshold value, wherein the capacitor fault category comprises thermal breakdown and electric breakdown. The application can solve the technical problem of poor capacitor fault identification effect caused by the defects of low efficiency and poor reliability in the prior art.

The application discloses a method for passivating arsenic pollution of tailings by modified biochar loaded nano zero-valent iron, and the method comprises the following steps: collecting wide-frequency electrochemical impedance spectrum data and passivation layer thickness data in real time through an integrated micro three-electrode system, establishing an initial passivation layer resistance value benchmark, and extracting current passivation layer resistance value and capacitance value in real time to calculate characteristic resonance frequency and minimum breakdown voltage; when the current passivation layer resistance value exceeds the preset multiple of the benchmark value, the fluctuation amplitude of the characteristic resonance frequency is less than a preset fluctuation threshold value, and the passivation layer thickness is in a preset interval, a sinusoidal alternating voltage is applied at the characteristic resonance frequency, a conductive channel is formed in the passivation layer by dielectric breakdown, and then the channel is stabilized by a direct-current reduction pulse, so that in-situ activation of the passivation layer and periodic recovery of material activity are realized.

The utility model discloses an insulating fixed connecting device for a hanger rod of a self-baking type electrode holder of a yellow phosphorus furnace, which comprises an upper-layer insulating stainless steel plate and a lower-layer insulating stainless steel plate which are respectively welded with a stainless steel lifting lug to form a body. The lifting lug is hinged with the lifting sling chain and the self-baking type electrode holder suspender through a stainless steel pin shaft, a lifting lug HP-5 mica pad and a cotter pin respectively; and the middle HP-5 mica plate is fixed with the stainless steel plate through the double-end stud, the steel plate HP-5 mica pad, the spring washer and the nut to form an integral structure. According to the utility model, insulation, antimagnetic and anti-conduction are realized in a high-temperature smelting environment, an electric breakdown path is blocked, vibration impact is reduced through design, the structural stability is improved, and the maintenance cost is reduced. The service life of the device is remarkably prolonged, and equipment damage caused by electric conduction and vibration is reduced.

To provide a honeycomb structure that is less susceptible to dielectric breakdown and damage at high temperatures. [Solution] A honeycomb structure comprising a ceramic honeycomb structure having an outer periphery wall and partition walls disposed inside the outer periphery wall and forming a plurality of cells extending from a first end face to a second end face, a pair of electrode parts disposed on the outer periphery wall, one or more slits provided in the honeycomb structure, and a filler material filling at least a part of the space of the slit. The filler material has an electrical resistivity of 10.0 × 10 at 900°C. 3 A thermal expansion coefficient of 9.0 × 10⁻¹⁰ or greater, at temperatures of 40 to 800°C. -6 The temperature is below / ℃, and the Young's modulus is 0.10 GPa or higher.

This application discloses a method for passivating arsenic contamination in tailings using modified biochar-supported nano-zero-valent iron. The method includes: real-time acquisition of broadband electrochemical impedance spectroscopy data and passivation layer thickness data through an integrated micro three-electrode system to establish an initial passivation layer resistance value benchmark, and real-time extraction of the current passivation layer resistance and capacitance values ​​to calculate the characteristic resonant frequency and minimum breakdown voltage; when the current passivation layer resistance exceeds a preset multiple of the benchmark value, the fluctuation amplitude of the characteristic resonant frequency is less than a preset fluctuation threshold, and the passivation layer thickness is within a preset range, a sinusoidal AC voltage is applied at the characteristic resonant frequency to form a conductive channel in the passivation layer through dielectric breakdown, and then the channel is stabilized by a DC reduction pulse to achieve in-situ activation of the passivation layer and periodic recovery of material activity.

The utility model relates to the semiconductor technology, in particular to a power semiconductor module, which comprises a power module body (1), and a metal radiating surface (13) is arranged at the top of a plastic package shell (11). A creepage enhancing unit (14) is arranged on the plastic package shell (11) between the metal radiating surface (13) and the metal pin (12); and a bottom supporting boss (15) is arranged at the bottom of the plastic package shell (11). According to the utility model, the creepage distance between the electrode pin and the back electrode is increased by means of slotting the top surface and the side surface of the packaging external plastic packaging body and wrapping the electrode pin, and the risk of creepage breakdown is reduced. Meanwhile, the supporting structure designed at the bottom of the plastic package body can support the radiator to be far away from the hot surface of the PCB, the heat exchange efficiency of the radiator is improved, other circuit elements can be additionally installed in the space formed at the bottom, the size of the circuit board is reduced, and the design flexibility is improved.

There is provided a composite filler that has heat dissipation (a thermal conduction property) and higher electrical insulation than conventional electrical insulation. The composite filler is a composite filler forming a core-shell structure composed of a core substance made of carbon, metal, zinc oxide or zirconium oxide and a shell substance attached to a surface of the core substance. The shell substance is formed from fumed oxide particles, the fumed oxide particles being attached to a part or a whole of the surface of the core substance by mixing of the fumed oxide particles and the core substance in a dry ball mill. The fumed oxide particles are particles changed from bulky aggregated particles to gathered bulk particles, the aggregated particles being formed from perfect sphere primary particles aggregating in a form of strings of beads and fusing together. In the composite filler, percentage of the core substance ranges from 30 vol% to 85 vol% and percentage of the shell substance ranges from 15 vol% to 70 vol%, a thermal conductivity is 0.075 W / m·K or more, a volume resistivity is 1.0×105 Ω·cm or more, and a dielectric breakdown voltage is 1 kV / mm or more.

Electron sources that emit electrons by tunneling through a solid have the problem of having a short lifetime. This invention provides a new planar electron source with a long lifetime and a method for manufacturing the same. [Solution] The electron source comprises a graphene layer 130 having a planar electron emission area 150 on one side, and a p-type semiconductor layer in direct contact with the other side of the graphene layer 130. As a result, electrons are accelerated in the depletion layer within the p-type semiconductor layer. Preferably, the p-type semiconductor layer has a depletion layer with a width of 2.91 nm to 30 nm. [Effects] Unlike MIS-type electron sources, electrons are not accelerated within the insulating layer, so dielectric breakdown, which occurs when a large number of electrons travel through the valence band of the insulator, does not occur, resulting in a long-life electron source.

The utility model provides a wafer electrostatic processing system and semiconductor detection equipment. The wafer electrostatic processing system comprises a discharge probe, an acquisition probe, an electric breakdown module and a signal acquisition module. And the electric breakdown module is electrically communicated with the discharge probe so as to electrically break down the insulating layer on the surface of the processed wafer through the discharge probe. And the signal acquisition module is electrically communicated with the discharge probe and the acquisition probe at the same time so as to acquire an electric signal between the discharge probe and the acquisition probe and further determine the breakdown state of the insulating layer on the surface of the processed wafer. When the electric breakdown module carries out breakdown work, electric signal sampling between the discharge probe and the acquisition probe is carried out in real time so as to determine the breakdown state of the insulating layer on the surface of the processed wafer in real time, whether the surface of the processed wafer is broken down or not can be known in time, and the breakdown process and effect can be mastered in real time; and meanwhile, the electric breakdown module is controlled to work or stop, so that the breakdown process and the electrostatic discharge process are controllable.

The invention provides a high-voltage Dexon charge pump circuit and electronic equipment. The high-voltage Dexon charge pump circuit comprises an MOS unit circuit, a pump capacitor, a clock signal unit and a filter capacitor, an input voltage is connected to a specified node of the first MOS unit circuit; the pump capacitor is connected between two adjacent MOS unit circuits, and the clock signal unit is connected with the pump capacitor; and the filter capacitor is connected between a specified node of the last MOS unit circuit and the ground, and the connection point of the filter capacitor is used as the output end of the high-voltage Dexon charge pump circuit. According to the invention, stable high-voltage output capability is provided under the condition of various process, voltage and temperature changes, electrical breakdown between the grid electrode and the drain electrode and between the grid electrode and the source electrode of a device is effectively prevented, the requirement problem of using the circuit in a semiconductor process is solved, and the circuit design is more flexible and efficient by using the structure.

An electrode assembly manufacturing method according to the present disclosure uses a pre-compressed separator substrate. Therefore, a reduction in thickness of the separator by the pressure applied in a lamination process during the manufacture of an electrode assembly is small. For this reason, the separator of the electrode assembly manufactured by the method exhibits high insulation performance and does not experience a decrease in dielectric breakdown voltage. In addition, even though high pressure is applied during the lamination process, damage to the separator is small, and the processing speed is fast, resulting in process efficiency.

This invention relates to the field of semiconductor device packaging technology and discloses a testing method for reducing internal damage to semiconductor products. The method includes a top cover plate pressing fixture, upper and lower foamed silicone contact sealing for isolation, vacuum testing, a high-vacuum vacuum generator, a conductive copper plate, high-temperature resistant polymer foamed silicone, pre-treatment stages, testing stages, post-treatment stages, and material selection, along with a dedicated material selection adapter. This testing method for reducing internal damage to semiconductor products eliminates high-voltage electrical damage. The high-vacuum environment isolates the air medium, completely eliminating arcing, creepage, and air ionization phenomena under high voltage. The conductive copper plate balances the electric field, preventing localized high-voltage concentration from breaking down the chip's insulation layer and internal circuitry, significantly reducing electrical breakdown defects and avoiding mechanical structural damage. The high-temperature resistant polymer foamed silicone provides flexible sealing and buffering, eliminating rigid compression and effectively solving problems such as micro-cracks, delamination, wafer micro-cracks, and pin deformation in semiconductor packaging.

The invention discloses a preparation method of a carbon nanotube sensor adopting a low-cost evaporation process and a method for detecting Hg < 2 + > by using the sensor, and the preparation method of the carbon nanotube sensor adopting the low-cost evaporation process comprises the following steps: S1, cleaning and preparing a silicon oxide sheet; s2, growing and preparing a carbon nano tube; s3, copper net attachment and electrode evaporation; s4, preparing a nano gap; s5, carrying out functional modification on the sensor; the preparation cost is low, the process is simple and convenient, an evaporation process is adopted to prepare the electrode, traditional expensive micro-nano machining technologies such as EBL and FIB are replaced, and the preparation cost is greatly reduced; meanwhile, the process of forming the nano gap by triggering electric breakdown of the carbon nano tube through voltage stress is simple and convenient to operate, high in controllability and beneficial to large-scale production; the prepared sensor has high sensitivity and high selectivity when used for detecting Hg < 2 + >, the current tends to be stable after the sensor is soaked in ultrapure water and a 1 * PBS solution for 90 min, the stability is good, and the requirement for accurate detection of trace Hg < 2 + > can be met.

An X-ray source driving circuit and an X-ray generation device using the same are proposed. An objective of the present disclosure is to provide an X-ray source driving circuit having a low possibility of dielectric breakdown and capable of reducing an insulation distance between high voltage circuits, and to provide an X-ray generation device of which the size and weight may be reduced by using the same. To this end, the X-ray generation device includes an X-ray source including a cathode electrode, an anode electrode, and a gate electrode and configured to generate X-rays with a driving voltage applied to each electrode, a first voltage converter including a first transformer and at least one voltage multiplier for multiplying a first voltage output from the first transformer, and a second voltage converter including a second transformer and a voltage multiplier for multiplying a second voltage output from the second transformer.

This invention discloses a method for deep removal of fluid inclusions from quartz sand using molten salt electrolysis, belonging to the field of quartz sand purification technology. This method uses vein quartz as raw material, which undergoes crushing, sieving, magnetic separation, and flotation followed by high-temperature calcination and ice-water quenching pretreatment to induce microcracks on the quartz sand surface. A molten salt electrolysis cell is then prepared under a dry nitrogen atmosphere using a nickel alloy as the cathode, graphite as the anode, and a lithium-based electrolyte salt as the electrolyte. The pretreated quartz sand is placed near the cathode and electrolyzed for 2-30 minutes using a 2-24V DC pulse voltage. The electric field causes dielectric breakdown and rupture of the fluid inclusions, driving the directional migration of impurity ions. Finally, the sand is washed with boiling water, leached with mixed acid, washed again, and dried to obtain high-purity quartz sand with a SiO2 purity of not less than 4N8. This invention solves the problem of removing tiny fluid inclusions using traditional methods through the synergistic effect of thermal explosion and molten salt electrolysis. It has low energy consumption, high purification effect, and the prepared high-purity quartz sand can meet the application needs of high-end industries such as semiconductors and photovoltaics.

The present invention relates to a separator substrate. This substrate has a small and uniform pore size, which confers excellent physical strength and durability, and ensures a high dielectric breakdown voltage, resulting in a low short-circuit rate. To this end, the separator substrate comprises a plurality of pores and is a porous, laminar film composed of a polymeric material, including a polyolefin-containing resin. When measuring the vent curve (wet curve) of a wet sample, the difference between the maximum and minimum pressure is 100 psi or less. Furthermore, a heat-resistant layer forms on one or both sides of the separator substrate surface.