The invention provides an epitaxial structure of a
gallium nitride thin film and a preparation method, and relates to the technical field of semiconductors, and the epitaxial structure comprises a substrate, a buffer layer, a GaN thin film, an AlGaN
barrier layer and an insulating layer which are sequentially laminated; the insulating layer is provided with a plurality of rectangular gate slots, a first source slot and a
second source slot. The bottom of the first source slot and the bottom of the
second source slot extend to the bottom of the AlGaN
barrier layer. The comb-shaped grid is provided with a plurality of rectangular grid roots matched with the rectangular grid root slots; the width of each rectangular gate
heel in the longitudinal direction of the epitaxial structure and the distance between the adjacent rectangular gate heels are constrained by the actual intrinsic transconductivity of the epitaxial structure; when a break-over
voltage is applied to the comb-shaped grid
electrode, the two-dimensional
electron gas layer between the multi-contact pin source
electrode and the multi-contact pin drain
electrode is conducted, a
conductive channel is formed, the stability of source electrode
access resistance is improved, the non-linear change of the source electrode along with the current or
voltage is reduced, and the
linearity of the epitaxial structure is further improved.