932 results about "Dielectric strength" patented technology

A flexible insulating tape (16) contains a flexible backing (18) and a mica or mica-like silicate matrix (20) with insulating resin (17) and intercalated metal ions (12) between the matrix (2) where the resin (17) and the ions (12) are intimately disposed next to the mica (20).

An anode (14, 208, 410) and/or cathode (12, 212, 420) of a capacitor has a large surface area. The high surface area of the anode is provided by forming the anode from a thin, electrically conductive layer (16) formed from metal particles (18) or an electrically conductive metallic sponge (416). These materials provide a porous structure with a large surface area of high accessibility. The particles are preferably directional or non-directional sponge particles of a metal, such as titanium. The conductive layer hasa dielectric film (36, 236, 414) on its surface, formed by anodizing the particle surfaces. The dielectric film has a combination of high dielectric constant and high dielectric strength. The cathode (12, 212, 420) of the capacitor is either a conventional solid material or, more preferably, has a large surface provided by forming the surface from a sponge or particles analogously to the anode. The high dielectric strengths obtainable from the capacitor allow for extreme miniaturization, making the capacitor particularly suited for integrated circuit applications.

The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 mu OMEGA cm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 CNi+0.74 CY<1.6 at % where CNi denotes the Ni content (at %) and CY denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.

In electronic devices, heat removal is an important consideration of any device designer. Thermally conductive, high-temperature polyimide composites are disclosed herein which are generally useful as a dielectric layer in an electronic device, or a precursor metal-laminate, where the dielectric is layered on one side (or on both sides) with a metal. The polyimide composites of the present invention contain dispersed therein thermally conductive filler particles at a weight percent between 40 and 85 % weight percent. These film composites have good dielectric strength, good thermal conductivity, and optionally good adhesivity.

A thin-film piezoelectric element has a substrate, a lower electrode, a piezoelectric portion, and an upper electrode that are sequentially formed on the substrate. The piezoelectric portion has a dielectric thin film that has an alkali niobium oxide-based perovskite structure expressed by general formula (Na_xK_yLi_z)NbO₃ (0<x<1, 0<y<1, 0≦z<1, x+y+z=1), and a high voltage-withstand dielectric that has a dielectric strength voltage greater than that of the dielectric thin film.

Electrowetting devices coated with one or more polymeric layers and methods of making and using thereof are described herein. The coatings may be formed in a single layer or as multiple layers. In one embodiment the first layer deposited serves as an insulating layer of high dielectric strength while the second layer deposited serves as a hydrophobic layer of low surface energy. These materials may themselves be deposited as multiple layers to eliminate pinhole defects and maximize device yield. In one embodiment the insulating layer would be a vapor deposited silicone polymeric material including, but not limited to, polytrivinyltrimethylcyclotrisiloxane or polyHVDS. In another embodiment the insulating layer may be a vapor deposited ceramic such as SiO₂ with very little carbon content. In a further embodiment the insulating layer may be composed of alternating layers of a siloxane material and a ceramic material.

The present invention relates to composite materials with a high dielectric constant and high dielectric strength and to methods of producing the composite materials. The composite materials have high dielectric constants at a range of high frequencies and possess robust mechanical properties and strengths, such that they may be machined to a variety of configurations. The composite materials also have high dielectric strengths for operation in high power and high energy density systems. In one embodiment, the composite material is composed of a trimodal distribution of ceramic particles, including barium titanate, barium strontium titanate (BST), or combinations thereof and a polymer binder.

Devices and systems comprising high current/high voltage GaN semiconductor devices are disclosed. A GaN die, comprising a lateral GaN transistor, is sandwiched between an overlying header and an underlying composite thermal dielectric layer. Fabrication comprises providing a conventional GaN device structure fabricated on a low cost silicon substrate (GaN-on-Si die), mechanically and electrically attaching source, drain and gate contact pads of the GaN-on-Si die to corresponding contact areas of conductive tracks of the header, then entirely removing the silicon substrate. The exposed substrate-surface of the epi-layer stack is coated with the composite dielectric thermal layer. Preferably, the header comprises a ceramic dielectric support layer having a CTE matched to the GaN epi-layer stack. The thermal dielectric layer comprises a high dielectric strength thermoplastic polymer and a dielectric filler having a high thermal conductivity. This structure offers improved electrical breakdown resistance and effective thermal dissipation compared to conventional GaN-on-Si device structures.

The present invention provides an improved supercapacitor-like electronic battery comprising a conventional electrochemical capacitor structure. A first nanocomposite electrode and a second electrode and an electrolyte are positioned within the conventional electrochemical capacitor structure. The electrolyte separates the nanocomposite electrode and the second electrode. The first nanocomposite electrode has first conductive core-shell nanoparticles in a first electrolyte matrix. A first current collector is in communication with the nanocomposite electrode and a second current collector is in communication with the second electrode. Also provided is an electrostatic capacitor-like electronic battery comprising a high dielectric-strength matrix separating a first electrode from a second electrode and, dispersed in said high-dielectric strength matrix, a plurality of core-shell nanoparticles, each of said core-shell nanoparticles having a conductive core and an insulating shell.

Apparatus for inserting transmit diversity into an RF signal for transmission, comprises: an RF splitter for splitting the RF signal to be transmitted into two signal parts, and a non-linear phase modulator which applies a non-linear phase modulation to one of the two signal parts, thereby to provide transmit diversity between the first signal part and the second signal part. One of the ways of inserting a non-linear phase modulation into the RF signal is to use a spinning disc with tracks of different dielectric strength. The apparatus is useful in cellular telephony for supplying repeaters and base station extensions with diversity capability.

A method and apparatus are disclosed for selective removal of a conformal coating from the solder balls of grid array packages such that the benefits of the coating are realized. An ancillary benefit of the invention is improved process-ability of the grid array package by improving the mechanical containment of the solder during the reflow process and improved electrical isolation between the individual solder attachment points. For example, a method for coating a ball grid array is provided, which includes coating the ball grid array with a thin layer of parylene. Next, the solder ball side of the part is butter smeared or squeegeed with a water soluble coating and assembled wet. A mask having holes in the same pattern as the balls in the grid, and a thickness that is about 80% of the height of the balls, is applied to the solder ball side of the part. This side of the part is then butter smeared again with the water soluble coating, and the entire assembly is allowed to dry. At this point, about 20% of each parylene-coated solder ball protrudes higher than the surface of the mask. The solder ball side of the part is then grit blasted with an abrasive material. The extent that the abrasive material removes the parylene coating from the solder balls is limited by the mask and the layer of water soluble coating. Therefore, the grit blasting removes the parylene coating from only the protruding areas (e.g., about top 20%) of the solder balls. Water is then used to remove the water soluble coating, and the parylene coated part is baked to remove moisture. Thus, a parylene coated ball grid array (or column grid array) is provided that is highly impervious to moisture, has a very high dielectric strength, and thereby improves the electrical performance and reliability of the surface mounted part.

The invention relates to a white opaque film formed from a crystallizable thermoplastic, preferably thermo-plastic polyester in the form of polyethylene terephthalate, barium sulfate and titanium dioxide as pigments, at least one optical brightener, and optionally at least one dye soluble in the thermoplastic. The film optionally includes, an additional functionality, e.g. in the form of an adhesive coating, of a coating with aminosilane or silicone, of UV resistance, of hydrolysis resistance, of flame retardancy, or of a sealable outer layer.

The invention provides a display device having a thin film transistor and a storage capacitor storing a display signal applied to a pixel electrode through this thin film transistor on a substrate, where dielectric strength between electrodes forming the storage capacitor is enhanced for increasing the yield. In the storage capacitor, a lower storage capacitor electrode, a thin lower storage capacitor film, a polysilicon layer, an upper storage capacitor film and an upper storage capacitor electrode are layered. The polysilicon layer is formed by crystallization by laser annealing. The polysilicon layer of the storage capacitor is microcrystalline and thus the flatness of its surface is enhanced. The pattern of the polysilicon layer (storage capacitor electrode) is formed larger than the bottom portion of an opening, and the edge of its peripheral portion is located on a buffer film on the slant portion of the opening or on the buffer film on the outside of the opening.

An insulated metal substrate (IMS) for supporting a device comprises a metallic substrate having a ceramic coating formed at least in part by oxidation of a portion of the surface of the metallic substrate. The ceramic coating has a dielectric strength of greater than 50 KV mm⁻¹ and a thermal conductivity of greater than 5 Wm⁻¹K⁻¹.