286 results about "Dielectric strength" patented technology

Provided are a charging system, an electrical isolation system, a control system, and a shockwave device. The charging system is provided with at least two electrical isolation circuits, thereby improving the frequency of sending charging control signals and further improving the frequency of charging a shockwave generation apparatus. The electrical isolation system can greatly improve the dielectric strength of the electrical isolation system, reduce a leakage current on the surface of a shockwave generator, and ensure the safety performance of the shockwave generator. The shockwave device can effectively monitor the discharge energy of a shockwave emitter, thereby improving treatment safety, controllability, and working efficiency.

The invention relates to a high-voltage connector testing method, device and equipment and a storage medium, and the method comprises the following steps: carrying out the all-directional scanning of a high-voltage connector, and obtaining a connector surface electromagnetic field distribution data set; performing dielectric strength measurement on the high-voltage connector based on the electromagnetic field distribution data set to obtain dielectric breakdown characteristic parameters of the connector; performing frequency domain characteristic analysis on the dielectric breakdown characteristic parameters of the connector to obtain an impedance matching characteristic curve of the connector; performing thermal stress analysis on the high-pressure connector based on the impedance matching characteristic curve to obtain a connector stress distribution state diagram; and performing reliability analysis on the high-pressure connector based on the stress distribution state diagram to obtain a connector service life prediction report, and solving the technical problem that the influence of the internal and external environments of the connector on the performance of the connector under the actual working condition is difficult to accurately reflect due to the fact that an existing method mostly depends on an idealized model hypothesis when thermal stress analysis is performed.

The invention discloses an application for improving the insulation performance of electrical equipment based on an electrical conduction optimization protective agent, relates to the technical field of electrical insulation, and aims to dynamically acquire temperature, electric field distribution and humidity parameters, quickly respond to the equipment operation state and environment change, guarantee data accuracy in a high-load or extreme environment and improve the insulation performance of the electrical equipment in the aspects of state evaluation. Constructing a data-driven state model by combining a support vector machine (SVM) and a long short-term memory (LSTM) network algorithm, and performing equipment state trend prediction; in cooperation with an electric field distribution diagram generated based on finite element analysis, a high-risk area is accurately marked, and the comprehensiveness and accuracy of state evaluation are remarkably improved; in terms of protection measures, multiple types of electrical conduction optimization protective agents are applied to a high-risk area, heat-resistant, hydrophobic and high-dielectric-strength protective agents are selected for different problems, the coating thickness is dynamically adjusted in combination with the change of the electric field strength, and insulation degradation caused by local hot spots, electric field concentration and humidity is effectively relieved.

The invention relates to a biaxially oriented polypropylene composite film for a capacitor and a preparation method of the biaxially oriented polypropylene composite film. The biaxially oriented polypropylene composite film is of an ABA three-layer structure; wherein the layer A is prepared from the following raw materials: PP, a nucleating agent and a composite filler of MAH-g-PP and nanoparticles; the layer B is prepared from the following raw materials: PET master batch, modified silicon dioxide and a brush polymer. According to the preparation method, the three-layer structure composite film is prepared, the layers are firmly combined through covalent bonds, hydrogen-bond interaction and the like, and the interlayer peel strength is remarkably improved; a nano particle filler with a high dielectric constant is introduced into the A-layer structure, so that the dielectric strength of the film is improved, and meanwhile, the film has relatively high anti-breakdown strength; and the layer B effectively improves the mechanical stability of the film material, and has higher mechanical property and material rigidity compared with the traditional PP film.

The invention discloses a power module packaging structure. According to the chip, a non-linear conductive material coating is arranged at the connecting part of the edge of each metal bonding pad and a chip substrate, and the connecting part of the edge of each metal bonding pad and the chip substrate is the joint of the metal bonding pad, the chip substrate and an insulating encapsulating material, namely the three-phase point. Through the arrangement of the non-linear conductive material coating, the resistivity is high in a normal low field, and electric leakage is prevented; and when the local electric field intensity is increased sharply (terminal at the three-phase junction), the resistivity is reduced sharply, the electric field is uniformly dispersed, and the peak of the local electric field is inhibited, so that the overall dielectric strength and creepage distance of the module are improved. According to the technical scheme, the insulation reliability of the power module under high-voltage, high-frequency and high-temperature working conditions is remarkably improved, particularly, partial discharge is restrained at a three-phase point, the service life of the module is prolonged, and the production and maintenance cost is reduced.

The invention discloses a production method of a sintered neodymium-iron-boron spliced magnet. The method comprises the following steps: processing a magnet to a predetermined size, cleaning and drying; dissolving solid epoxy resin, a solid latent curing agent and an accelerant by using an organic solvent to prepare an impregnating adhesive; gluing the two sides of the glass fiber cloth, and fully volatilizing a solvent to obtain pre-impregnated glass fiber cloth; after being cut, the magnetic blocks are inserted between the to-be-spliced magnets; and after being clamped by a clamp, the insulating adhesive layer is heated and cured to form a compact and pore-free insulating adhesive layer. According to the invention, air holes of the adhesive layer are thoroughly eliminated through a prepreg process, the formed insulating adhesive layer has excellent dielectric strength and insulativity, adjacent magnets can be effectively isolated, an eddy current channel can be effectively cut off, the eddy current heating problem in high-frequency application is remarkably reduced, and meanwhile, high strength and high reliability of the spliced magnet are ensured. The method is particularly suitable for the fields of motors and the like needing to reduce eddy-current loss.

The invention discloses an isolating switch dynamic arc simulation method considering contact action and a related system thereof, and belongs to the technical field of high-voltage electrical equipment simulation. Firstly, a three-dimensional geometric model of the disconnecting switch is constructed according to actual size parameters, then the three-dimensional geometric model is imported into simulation software, movement of a movable arc striking contact is simulated, and a medium strength recovery curve is obtained. And then constructing an electromagnetic simulation circuit considering arc reignition, simulating a dynamic arcing process, and obtaining a voltage difference and a current at two ends of the isolation switch. The arc extinguishing or arcing state is judged by combining the voltage difference, the current and the medium strength recovery curve, and the electromagnetic simulation circuit is controlled according to the arc extinguishing or arcing state, so that closed-loop simulation of the arcing-arc extinguishing alternating state of the disconnecting switch is realized. According to the method, the contact motion characteristics and the arc physical process are innovatively coupled, the problem of simulation errors caused by the adoption of a simplified medium strength curve in a traditional method is solved, the isolation switch operation transient overvoltage characteristics can be accurately predicted, and a reliable analysis means is provided for insulation design of extra-high voltage equipment.

The invention discloses a composite material polypropylene film and a preparation method thereof, and belongs to the technical field of polymer modification and polymer films. The preparation method of the composite material polypropylene film comprises the following steps: blending 5-10 wt% of maleic anhydride grafted polypropylene (PP-g-MAH), 5-20 wt% of a cycloolefin copolymer or a cyclic block copolymer and 75-90 wt% of isotactic polypropylene, granulating, carrying out melt extrusion at 240-260 DEG C, and carrying out tape casting at 80-95 DEG C to form a sheet; preheating the sheet at the temperature of 145-170 DEG C, synchronously stretching at the temperature of 150-175 DEG C, carrying out heat setting at the temperature of 160-175 DEG C, and cooling; the composite material polypropylene film is prepared through the steps of extrusion, traction, corona treatment, rolling and the like. The composite material polypropylene film not only has good heat resistance and good dielectric strength at a high temperature, but also has a relatively high dielectric constant and relatively low dielectric loss, and is suitable for a film capacitor.

An initiator includes a pair of electrodes, an insulating member interposed between the pair of electrodes, a cover body covering one end side of the pair of electrodes together with a space around the pair of electrodes, and an explosive with which the space inside the cover body is filled. The pair of electrodes include, in the space, a discharge gap where a dielectric strength is lower than a dielectric strength of a portion where the insulating member is interposed. In this way, provided is a technology that enables ignition without a bridge wire and facilitates manufacture of an initiator.

The invention relates to the technical field of testing equipment, and particularly discloses an insulating oil dielectric strength testing device which comprises a dustproof detection box, one side of the dustproof detection box penetrates through and is fixedly connected with an observation window, the top of the dustproof detection box is fixedly connected with a dehydration device, and the bottom of the inner wall of the dustproof detection box is fixedly connected with a first supporting seat. The bottom of the testing oil cup is communicated with an oil outlet pipe, the bottom of the testing oil cup penetrates through and is rotationally connected with a cleaning device, the parts, located on the two sides of the testing oil cup, of the bottom of the inner wall of the dustproof detection box are fixedly connected with impurity removing devices, and the parts, located on the two sides of the testing oil cup, of the bottom of the inner wall of the dustproof detection box are fixedly connected with distance adjusting devices; the dielectric strength testing device for the insulating oil is provided with the dehydration device, so that the dielectric strength of the insulating oil is prevented from being reduced due to the existence of water, the accuracy of a test result is improved, and the impurity removal device is arranged, so that the test result is prevented from being influenced by impurities or generated foam in the insulating oil.

To provide a semiconductor device capable of improving the dielectric strength between a polysilicon wiring and a semiconductor substrate.SOLUTION: The semiconductor element (DEV1, DEV2) includes a semiconductor element substrate (SUB), a first insulating film (IF1, IF4), a second insulating film (IF2, IF5), a third insulating film (IF3, IF6), and a polysilicon wire (PW1,). PW2. The substrate has a first F1 and a first lower F2 opposite to the first upper surface. The first upper surface has a trench (side TR1, TR2) extending toward the first lower surface. The first insulating film is formed in the trench. The third insulating film is formed above the first insulating film so as to cover an upper surface of the second insulating film. The polysilicon wiring is formed on the third insulating film and electrically insulated from the semiconductor substrate by at least the second insulating film and the third insulating film.SELECTED DRAWING: Figure 1

The invention relates to the technical field of material sealing, in particular to a high-performance insulating ceramic sealing method for a neutron tube, which comprises the following steps: sequentially carrying out organic solvent ultrasonic cleaning and argon plasma etching activation treatment on a sealing surface of a cylindrical high-purity aluminum oxide ceramic piece, and depositing a titanium transition layer through magnetron sputtering, the ceramic piece with the titanium transition layer is obtained; the sealing face of the kovar alloy cylindrical flange plate is subjected to acid pickling, an oxide layer is removed, cleaning and drying are conducted, and a metal sealing part is obtained; preparing an active brazing filler metal sheet; the components are assembled in sequence to form a pre-assembled component; the pre-assembled component is placed in a vacuum brazing furnace, axial pre-tightening force is applied to the pre-assembled component, sealing is completed, then cooling is controlled, and a sealing piece with an airtight brazing joint is formed; and carrying out annealing treatment to obtain a finished product sealing assembly. Therefore, the problems of low dielectric strength, large thermal expansion coefficient difference, difficulty in interface quality control and the like in the prior art are solved.

The invention relates to porous ceramic for a high-air-permeability semiconductor device as well as a preparation method and application of the porous ceramic, raw materials comprise 35-55 wt% of alumina powder and 10-55 wt% of a polymer microsphere pore-forming agent, and the polymer microsphere pore-forming agent comprises one or more of agarose, polylactic acid, polyacrylamide and organic silicon resin. The porous ceramic for the high-air-permeability semiconductor device, which is obtained by the preparation method provided by the invention, has relatively high porosity and air permeability, and also has relatively high mechanical strength and dielectric strength. According to the present invention, the gas volume flow rate is applied to the internal pore size characterization, and the high porosity and the high gas permeability can be achieved by accurately measuring the gas flow transmittance, accurately characterizing the pore size and the opening degree in the porous ceramic, and adjusting the particle size and the addition amount of the polymer microsphere pore forming agent; through the preparation process, the porosity and mechanical strength of the porous ceramic for the high-air-permeability semiconductor device can be balanced, meanwhile, high air permeability and high compressive strength are obtained, and the porous ceramic is particularly suitable for electrostatic chucks of different manufacture procedures.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

Layered dielectric materials for use in controlling dielectric strength in microelectronic devices, especially as they relate to electrophoretic and electrowetting applications. Specifically, a combination of a first atomic layer deposition (ALD) step, a sputtering step, and a second ALD step result in a layer that is chemically robust and nearly pinhole free. The dielectric layer may be disposed on the transparent common electrode of an electrophoretic display or covering the pixelated backplane electrodes, or both.

This invention discloses an insulating product withstand voltage testing device, comprising an iron frame, a support device, and a lifting device. The iron frame consists of two vertical rods and a horizontal rod connecting the two vertical rods. The two vertical rods are arranged opposite each other, and the horizontal rod is fixedly connected between the tops of the two vertical rods. The support device includes a retractable horizontal plate fixed to the vertical rods. The horizontal plate extends to directly above an insulating oil tank, and its end extending above the insulating oil tank has a groove for supporting an insulator. After the retractable horizontal plate of the support device extends to directly above the insulating oil tank, the matching groove at its end can stably support the insulator without requiring the operator to hold it continuously. The lifting device, through the cooperation of a pull cable, pulleys, and clamping components, can easily realize the lifting and lowering movement of the insulator. The operator only needs to pull the pull cable to complete the lifting and lowering operation of the insulator, greatly reducing physical exertion and improving the overall ease of operation.

The present disclosure aims to provide hexagonal boron nitride powder, etc., for obtaining a resin composition that achieves both excellent thermal conductivity and dielectric strength. A hexagonal boron nitride powder according to one aspect of the present disclosure is a hexagonal boron nitride powder containing hexagonal boron nitride aggregates (101), characterized in that the average particle size is 25 μm or more and 70 μm or less, the cumulative frequency of particle size of 40 μm or more in the volume-based particle size distribution is 65% or more, the tap bulk density is 0.84 g / mL or more and 1.05 g / mL or less, and the oil absorption is 50 mL / 100 g or more and 84 mL / 100 g or less.

The present invention relates to a single-crystalline Al2O3 dielectric compatible with two-dimensional materials and an integrated device thereof. A single-crystalline Al thin film is produced on a single-crystalline graphene / germanium (110) substrate via the van der Waals (vdW) epitaxy approach, the single-crystalline Al thin film is peeled off from the graphene / germanium substrate, and intercalative oxidation is performed to produce the single-crystalline Al2O3 dielectric compatible with two-dimensional materials on the lower surface of the single-crystalline Al thin film. The gate leakage current (J<1×10−5 A cm−2), interface state density (Dit=8.4×109 cm−2 eV−1), and dielectric strength (Ebd=17.4 MV / cm) of the single-crystalline Al2O3 dielectric obtained in the present invention can meet the requirements of the international roadmap for devices and systems (IRDS) for low power consumption devices.

This invention discloses a method for preparing a novel ultra-high voltage high-performance composite insulating material, belonging to the field of composite insulating material preparation technology. The technical solution includes the following steps: S1, preparing a modified epoxy-silicone rubber composite resin matrix: 40-50 parts by weight of bisphenol A type epoxy resin (E-51) are placed in a reaction vessel, heated to 60-70℃, and continuously stirred at a stirring rate of 300-500 r / min. 10-15 parts by weight of terminal hydroxyl polysiloxane (molecular weight 5000-10000) are added, and the temperature is kept constant for 1.5-2 hours; subsequently, the system temperature is lowered to 40-50℃. The beneficial effects of this invention are: by setting up a resin matrix system of "terminated hydroxyl polysiloxane modified epoxy resin + nano-alumina / boron nitride composite reinforcement," the problem of imbalance between high voltage resistance and aging resistance in existing materials is solved. It exhibits significantly improved dielectric strength, greatly reduced dielectric loss, and excellent high and low temperature cycling performance, meeting the long-life operation requirements of ultra-high voltage equipment.

To provide a resistor chip capable of improving dielectric strength.SOLUTION: A resistor chip 10 includes an insulating member 20 and a resistive element 30 provided on the insulating member 20. The resistive element 30 includes an insulator 31 and a resistive layer 40 provided within the insulator 31. The insulating member 20 includes an insulating substrate 21 made of glass or sapphire.SELECTED DRAWING: Figure 5

The invention relates to the technical field of insulation performance testing, in particular to a method for predicting the insulation strength of ultrahigh-pressure helium and electronic equipment, and the method comprises the steps: building a plasma fluid simulation model; a multi-particle multi-reaction system is considered; acquiring migration rates and diffusion coefficients of all particles, and inputting the migration rates and the diffusion coefficients into the simulation model; setting environmental parameters in the simulation model according to the actual working condition of helium; setting potential boundary conditions of the simulation model; performing simulation model calculation by using a numerical calculation method, and judging whether breakdown occurs or not; if not, using a dichotomy voltage parameter to scan and correct potential boundary conditions, and performing simulation model calculation again; if yes, the critical breakdown voltage of helium is obtained. Through the prediction method and the electronic equipment, the helium breakdown voltage under different air pressures and different gaps can be predicted, and the problem that a prediction result is far away from an actual value in the prior art can be solved.

The invention discloses a preparation method and application of a tensile mica tape based on polyimide film dielectric reinforcement, and relates to the technical field of mica tape preparation. The invention aims to solve the problem of low dielectric strength of the traditional main insulation mica tape of the offshore high-voltage wind driven generator. The method comprises the following steps: bonding the mica paper and the polyimide film, or bonding the mica paper, the polyimide film and the glass wool cloth, and then carrying out hot pressing and curing to obtain the polyimide film dielectric reinforcement-based tensile mica tape. The tensile mica tape based on polyimide film dielectric reinforcement is applied to a main insulating material of a stator bar of an offshore high-voltage wind driven generator. The invention can obtain the preparation method and application of the tensile mica tape based on dielectric reinforcement of the polyimide film.

The application relates to a board (10) having at least one soldering surface (16), wherein the board (10) is provided for assembly with a power semiconductor (24), wherein for assembly it is provided that the soldering surface (16) is connected to the power semiconductor (24) by a soldering process, wherein a base body (12) of the board (10) has at least one board material with a high thermal conductivity and / or a high electrical dielectric strength and wherein the board (10) is designed to have a heat-dissipating and / or electromagnetically shielding effect with respect to the power semiconductor (24). The application further relates to a power semiconductor arrangement (40) with such a plate (10), a method for producing a power semiconductor arrangement (40), and an inverter with a power semiconductor arrangement (40).

The invention relates to a telescopic high-voltage disconnecting link shielding cover body device, and belongs to the field of live working protection devices of power equipment. The device comprises a disconnecting link body and a telescopic cover body, and the telescopic cover body adopts a wrinkle structure to perform telescopic deformation along the extension direction of the disconnecting link body so as to adapt to disconnecting links of different sizes; the device further comprises a modularized insulating thermosensitive layer and a pressing type magnetic locking module. The modularized insulating thermosensitive layer comprises a plurality of groups of insulating units which are detachably connected, the dielectric strength of each unit corresponds to different voltage grades, an insulating thermosensitive color-changing layer is arranged at the side end of each insulating unit, and reminding is realized through thermosensitive induction color changing; the pressing type magnetic locking module comprises permanent magnet arrays and magnetic conductive plates which are evenly distributed on the edges of the side ends of the two attached insulation units, and magnetic adsorption and fixation are achieved through pressing. The device is simple in structure and high in adaptability, can effectively protect the high-voltage knife switch, and improves the operation safety of power equipment.

The invention relates to an electrical system (100) comprising: - an electrical device (116); - a radiator (102) having a face (110; 104) for receiving the electrical device (116), this face (110; 104) being provided with an electrically insulating layer (112) having a thickness of at least 100 μm and a dielectric strength of at least 10 kV / mm; and - a thermal interface material (114) extending over the electrically insulating layer (112), the electrical device (116) extending over the thermal interface material (114).

The utility model belongs to the technical field of insulating oil detection, and discloses an insulating oil dielectric strength testing device which comprises a rack and a detection assembly arranged in the rack, and the detection assembly comprises a sealing vessel used for containing insulating oil and a detection unit used for dielectric strength detection; the motor is arranged on the rack; the clamping arm is used for clamping a vessel, and the clamping arm is fixedly connected with the output end of the motor; the air inlet valve is communicated with the vessel through a pipeline; the exhaust valve is communicated with the vessel through a pipeline; the nitrogen cylinder is communicated with the air inlet valve through a pipeline; according to the scheme, insulating oil is introduced into the vessel in an inclined mode, air in the vessel is replaced, the oxidation influence of oxygen and moisture on oil quality is reduced, and therefore abnormal discharge and data deviation caused by bubbles are reduced; the utility model solves the problem that the existing dielectric strength vessel is easy to cause bubbles to be mixed into the insulating oil.

This invention discloses a design and fabrication method for alumina ceramic insulating components for vacuum applications, belonging to the technical field of ceramic insulating component design and fabrication. The method includes steps such as macroscopic structural optimization to control the surface electric field distribution and microscopic structural optimization to control secondary electron multiplication. This invention integrates the two stages of vacuum surface flashover initiation and development into a unified optimized design and model construction, effectively reducing the generation of initial electrons and suppressing the multiplication of secondary electrons. This not only significantly enhances the dielectric strength of the entire insulation system but also significantly improves the stability of the equipment. Using ceramic 3D printing with photopolymerization layer-by-layer printing, no additional machining or mold manufacturing is required. A 3D printer using ultraviolet light digital forming technology combined with a sintering furnace can directly generate complex and intricately patterned alumina ceramic components from computer graphics data in a unified manner. This greatly shortens the product development cycle, improves production efficiency, and reduces production costs.

The invention discloses hexagonal boron nitride and a preparation method thereof, and belongs to the technical field of hexagonal boron nitride.The preparation method comprises the steps that a nitrogen source and a boron source are dried and mixed and pressed to obtain a densified green body, a densified precursor is prepared, boron nitride sintered blocks are prepared, and the hexagonal boron nitride is obtained through crushing, sieving, acid pickling and drying. The hexagonal boron nitride crystal prepared by the invention has excellent quality, remarkable anisotropic heat conduction characteristic, high dielectric strength and stable insulating property in a wide temperature range, can still keep an excellent insulating level even in a high-temperature environment, and can fully meet the performance requirements of scenes such as high-end electronic packaging and high-temperature devices; due to the self-lubricating property caused by low hardness, the application potential in the fields of high-temperature bearings, release agents and the like is expanded.

A method for controlled switching of a switching device is described. In one example, a rate of decrease of a first dielectric strength (RDDS) value and a second RDDS value is determined. Once determined, the first RDDS value is compared to an absolute peak value of a gap voltage. If the first RDDS value is less than the absolute peak value of any one of a plurality of half cycles of the gap voltage, switching of the switching device at a second time can be performed. To this end, the second time is an offset relative to a first time such that the absolute peak value of the gap voltage does not intersect a range defined by the first RDDS value and the second RDDS value.