181 results about "Dielectric thin films" patented technology

The present application provides an entropy-regulated composite dielectric film, which comprises a polymer matrix; and fillers dispersed in the polymer matrix, wherein the fillers comprise Bi 4‑a M 1a Ti (3‑3b) M 2b O 12 , wherein M1 comprises at least one of lanthanum, neodymium, samarium and praseodymium, M2 comprises at least one of zirconium, hafnium and tin, 0 The entropy-regulated composite dielectric film has high temperature resistance, high breakdown strength, high polarization strength, high energy storage density and good stability.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other, and a dielectric film between at least one of at least a portion of the first electrode film and the piezoelectric layer and at least a portion of the second electrode film and the piezoelectric layer.

The invention relates to the technical field of thin film deposition, and discloses uniform-heating dielectric thin film deposition equipment which comprises a main body box, a rotating assembly is installed in the main body box, and a closed processing assembly is further installed in the main body box. Through direct cooperation of the processing pipeline and the sealing seat, a processing area in the main body box and the external environment can be rapidly isolated, external air and impurities are effectively prevented from entering and interfering the dielectric film deposition process, automatic linkage of the locking action and the processing pipeline vacuumizing process can be achieved through the cooperation structure of the locking assembly, the ejector rod, the piston and the connecting cover, and the working efficiency is improved. When a machining pipeline is vacuumized, the internal pressure of a connecting cover is synchronously reduced, a piston and an ejector rod are pulled to move upwards, a connecting rod is driven to move to the position below a clamping seat along an inclined moving groove of a fixing seat, then the connecting rod is driven to be clamped to the clamping seat through a vertical clamping groove, the operation efficiency is improved, and meanwhile it is guaranteed that locking action is synchronous with the machining environment requirement; and locking failure caused by manual misoperation is avoided.

A method for processing a substrate is provided. The method includes disposing a substrate in a processing region of a process chamber and flowing a reaction gas into a remote plasma region of the process chamber, flowing a precursor gas into the processing region through the second plurality of channels in the showerhead, generating an inductively coupled plasma in the remote plasma region using the reaction gas to form plasma radicals, and exposing the precursor gas in the processing region to plasma radicals to form a dielectric film on the substrate with at least 95% step coverage.

A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

The invention relates to the field of dielectric energy storage materials, and discloses a polyimide-based composite dielectric film material and a preparation method thereof.The dielectric film is prepared from, by mass, 4-20 parts of modified barium strontium titanate and 100 parts of fluorinated polyamide acid solution, the modified barium strontium titanate is prepared from the following raw materials: hydroxylated barium strontium titanate, 3-glycidyl ether oxypropyl trimethoxy silane, perfluoropolyether alcohol and a catalyst, and the fluorinated polyamide acid solution is prepared from the following raw materials: a fluorine-containing diamine monomer and a fluorine-containing dianhydride monomer; according to the technical scheme, the polyimide film dielectric film is prepared from fluorinated polyamide and modified silane barium strontium titanate, the dispersity of barium strontium titanate in a polyimide matrix is remarkably improved, the compatibility of barium strontium titanate and fluorinated polyimide is remarkably improved, and the dielectric energy storage performance of the dielectric film is remarkably improved; the hydroxylated barium strontium titanate is modified through the 3-glycidyl ether oxypropyl trimethoxy silane and the perfluoropolyether alcohol, so that the dielectric loss of the dielectric film is remarkably reduced.

Implementations of the present disclosure generally relate to low k dielectric films disposed over a substrate. More particularly, implementations described herein provide, organic framework low k dielectric films and methods for forming the same. In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, where the film has a dielectric constant (k) of 3 or less.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

The application relates to an inorganic chloride-doped polymer electrolyte hybrid dielectric film material and a preparation method and application thereof, and belongs to the technical field of dielectric film materials and devices. The inorganic chloride-doped polymer electrolyte hybrid dielectric film material has significantly enhanced capacitance and ion migration capacity, can be used for developing an organic transistor memory with multi-level response to different pulse voltages, and can realize a wide memory window of 0.548 volts at a low working voltage of-1.5 volts. The memory also has good static and dynamic storage characteristics, and can realize accurate regulation and identification of different sizes of memory windows through programming gate pulse voltage. The novel polymer electrolyte hybrid dielectric film material and the organic transistor memory with multi-level storage characteristics thereof have the advantages of simple structure, excellent performance, easy scale-up manufacturing and the like, and will have good popularization and application prospects in the field of low-power-consumption optoelectronic devices and storage technologies.

This semiconductor capacitor includes a substrate, a first capacitor, and a second capacitor. The substrate has a first main surface, and a first groove and a second groove are formed at different positions on the first main surface. The first capacitor includes a first laminated structure in which two or more first dielectric films and two or more first conductive films are alternately laminated at least on an inner surface of the first groove. The second capacitor includes a second laminated structure in which two or more second dielectric films and two or more second conductive films are alternately laminated on at least the inner surface of the second groove. The first capacitor and the second capacitor are connected in series.

A semiconductor device that includes a substrate having an insulating surface; a first electrode on the insulating surface; a dielectric film on the first electrode; and a second electrode on the dielectric film. The second electrode has a protruding shape in a sectional view.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25° C. to about 600° C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

The invention discloses a low-loss high-tunability BZT laminated dielectric film and a preparation method thereof, the laminated film comprises a substrate, a BZT film layer and a zinc niobate-based microwave dielectric ceramic film layer, and the chemical general formula of the zinc niobate film layer is Zn [(Ge0. 5Mo0. 5) xNb1-x] 2O6. A ceramic target material is synthesized by adopting a solid-phase reaction method, and thin film layers are sequentially deposited through a magnetron sputtering technology to construct a heterostructure. The high dielectric constant of BZT and the low loss characteristic of zinc niobate are combined, the frequency characteristic is remarkably improved, the dielectric loss is effectively reduced while the high tunability is kept, and the high-quality FOM is obtained and reaches 36.77. The film is excellent in performance and controllable in process, and has important application value in microwave communication devices such as tunable filters and phased array radars.

Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of IDT electrodes, the first thickness being different from the second thickness.

A semiconductor device including a first pad on a substrate extending in a first direction and a second direction, a lower electrode connected to and disposed on the first pad, first to third supporter layers disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction, a dielectric film disposed on the lower electrode and the first to third supporter layers, and an upper electrode disposed on the dielectric film. At least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions.

This invention discloses a laser post-processing device and method for large-aperture optical dielectric thin film nodule defects, relating to the field of laser technology. The laser post-processing device for large-aperture optical dielectric thin film nodule defects includes: an ultraviolet pumped laser, a focusing lens, a femtosecond laser, a scanning galvanometer, a scanning field mirror, a centrally located aperture mirror, an observation camera, an electrically driven displacement platform, and a control computer. The laser post-processing device and method for large-aperture optical dielectric thin film nodule defects provided by this invention utilize the characteristics of small focal spot and small heat-affected zone of femtosecond lasers, and with the assistance of an optical camera, accurately remove nodule defects in localized areas in real time. Furthermore, it can automatically identify and accurately locate nodule defects, achieving rapid removal of nodule defects and reducing the impact of the post-processing process on the surrounding normal film layer. Simultaneously, it reduces manual intervention, improves the degree of automation, and effectively improves the post-processing efficiency of optical dielectric thin film nodule defects.

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

To suppress the occurrence of defects in a substrate in which a titanium ruthenium nitride film, a dielectric film, and a metal-containing film are stacked in that order. [Solution] The film formation method of the present disclosure comprises the steps of: forming a titanium ruthenium nitride film having a ruthenium content lower than 73 atomic percent on a substrate; forming a dielectric film to be laminated on the titanium ruthenium nitride film; and forming a metal-containing film to be laminated on the dielectric film.

This invention belongs to the field of optical sensing technology, specifically a microbubble-integrated Fabry-Perot resonant cavity sensor chip and its fabrication method. The optical sensor chip of this invention includes: two planar mirrors, a quartz microtube with a hollow microbubble in the middle, and two square quartz tubes; the two planar mirrors are placed parallel to each other vertically, and the two square quartz tubes are positioned on the left and right sides of the two planar mirrors to ensure that the two mirrors remain highly parallel; the hollow quartz microbubble is disposed between the two planar mirrors, and its two ends are bonded and fixed to the planar mirrors to form a microbubble-integrated Fabry-Perot resonant cavity sensor chip; the surface of the planar mirrors is coated with a metal thin film or dielectric thin film with a specific reflectivity. Based on the lens effect of microbubbles, this invention enables the sensor chip to possess the characteristics of high sensitivity, low mode volume, and high quality factor, while integrating natural microfluidic channels to achieve sensing of low-concentration chemical molecules or label-free biomolecules.

To provide a new light-emitting element. To provide a light-emitting element having high luminous efficiency. To provide a light-emitting element having a high blue index (BI). To provide a light-emitting element with low power consumption.SOLUTION: A light-emitting element comprising: a first electrode; a second electrode; and an EL layer between the first electrode and the second electrode, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a transflective electrode, in the light-emitting element, the EL layer contains an emission center substance, and when the EL layer contains only one kind of emission center substance, photon energy of a peak wavelength of light emitted from the light-emitting element is designed based on an average value of photon energy of light emitted from the emission center substance in a solution state and emission edge energy on a short wavelength side of an emission spectrum of the emission center substance in the solution state.SELECTED DRAWING: Figure 1

The invention relates to the technical field of dielectric films, and discloses a polypropylene dielectric film based on fluorinated polypropylene particles, a preparation method and application, and the preparation method comprises the following steps: step 1, mixing polypropylene and surface fluorinated polypropylene to form a mixture; the mixture comprises 70-95 parts of polypropylene and 5-30 parts of surface fluorinated polypropylene; the total amount of the mixture is 100 parts; 2, performing melt blending and hot press molding on the mixture obtained in the step 1 to obtain a to-be-stretched sheet; and step 3, performing bidirectional synchronous biaxial stretching on the to-be-stretched sheet to obtain the required dielectric film. According to the invention, the fluorinated polypropylene particles and the polypropylene matrix are mixed, so that the phase boundary or agglomeration phenomenon can be obviously avoided; after the fluorine group is introduced, due to the high dipole moment of the fluorine group, the fluorine group can induce stronger oriented polarization under the action of an alternating electric field, electron traps are formed on the surface and in the film, the dielectric constant of the film is effectively improved, and conduction loss is inhibited.

The application discloses a transition metal fluoride super ionic conductor dielectric film and a preparation method thereof. The super ionic conductor dielectric film is prepared by a thermal evaporation method from a transition metal fluoride super ionic conductor. The transition metal fluoride super ionic conductor is selected from scandium fluoride, yttrium fluoride, titanium fluoride, hafnium fluoride, manganese fluoride, ferrous fluoride and nickel fluoride. In the application, the source material of the transition metal fluoride is heated and evaporated into a gaseous state in an evaporation system by the thermal evaporation method. The gaseous fluoride is directly adhered to a substrate placed on the upper side of the source material and recrystallized, so that the thickness of the transition metal fluoride is controllable, the number of defects is controllable and the integration is very high. The super ionic transition metal fluoride dielectric material can show great potential in the design and manufacture of new functional devices.

This invention relates to the field of dielectric materials and energy storage materials, specifically to a self-assembled nanoscale multi-interface all-polymer nanostructure dielectric thin film and its preparation method. The composition of the thin film material meets the following requirements: the mass ratio of thermoplastic resin to bismaleimide resin is 95:5-65:35; the amount of catalyst added is 0.05wt%-2wt% of the weight of the bismaleimide resin. The thin film provided by this invention can meet the application requirements at 150℃ and above 600MV / m. The thermoplastic resin component in the film imparts good flexibility, suitable for the winding and stacking processes of thin film capacitors; while the bismaleimide (BMI) nanoscale multi-interface structure effectively blocks charge injection and excitation, significantly reducing leakage current under high temperature and strong electric field conditions, thereby improving its dielectric energy storage performance under high temperature and strong electric field conditions.

A method for selectively printing metal oxide dielectric films using directed fluidic assembly is provided. The metal oxide films are printed from a liquid suspension of nanoparticulate precursors using a dip coating mechanism. The resulting films can be fully cured at about 100° C. in conjunction with UV photoannealing. The printed metal oxide films can serve as the dielectric material for a variety of passive and active electronic devices. The method reduces cost and energy consumption for the fabrication of electronic devices, and can be used to fabricate devices on flexible polymer substrates.

The invention relates to a selective atomic layer deposition method, which comprises the following steps: S1, providing a substrate, the surface of which comprises a dielectric material region and a metal material region which are adjacently arranged; s2, an inhibitor is spin-coated on the material area of the substrate to form an inhibition layer, the inhibitor comprises long-chain alkyl mercaptan, and carbon atoms of an alkyl carbon chain in the long-chain alkyl mercaptan are larger than or equal to 10; and S3, depositing a dielectric material film on the dielectric material area in the substrate obtained in the step S2. Growth of the inhibition layer is completed efficiently by means of spin-coating, high-rotating-speed spin-coating can generate strong centrifugal force so that the inhibitor solution can be evenly spread on the surface of the substrate rapidly, the even inhibition layer can be obtained after spin-coating drying, the preparation time is shortened from the hour level to the minute level, the sample preparation time is shortened, and the preparation efficiency is improved. Therefore, the preparation quality and efficiency of the dielectric film are improved.

A method for depositing silicon nitride (SiN) films within high aspect ratio (HAR) features with a reduced number of deposition cycles is provided. The method includes depositing three layers, for example, a silicon seed / silicon nitride / a silicon cap. The silicon seed and cap layers demonstrate improved bottom deposition performance with minimum sidewall and top deposition relative to silicon nitride. The silicon seed layer fills a portion of the HAR feature thus reducing the number of silicon nitride cycles needed to fill the HAR feature to targeted levels. The silicon cap layer protects the deposited silicon nitride during subsequent etching processes, which are performed to remove silicon nitride material formed on sidewalls and top surface of the feature.

The invention relates to the technical field of film capacitors, in particular to a metalized electrode structure of a film capacitor, which comprises a dielectric film and a metalized layer arranged on the surface of the dielectric film, the metalized layer comprises a grid area, an edge thickening area and a connecting bridge, the edge thickening area is arranged on the edge of the dielectric film, and the connecting bridge is arranged on the edge thickening area. The grid area comprises an inner-ring grid and an outer-ring grid, the aperture of the inner-ring grid is D1, the aperture of the outer-ring grid is D2, D1 and D2 meet the following relation: D1 is less than D2, the grid area is composed of a plurality of staggered metal strips, the inner-ring grid and the outer-ring grid are connected through a connecting bridge, the edge thickening area is connected with the outer-ring grid through the connecting bridge, the width of each metal strip is 0.1-1mm, and the width of each metal strip is 0.1-1mm. The hole diameter of the grid area ranges from 0.5 mm to 5 mm, the metalized layer is made of aluminum-zinc alloy materials, the thickness of the metalized layer ranges from 20 nm to 100 nm, and the width of the edge thickening area ranges from 2 mm to 5 mm. The technical problems that an existing thin film capacitor is poor in voltage endurance capability, heat dissipation performance and mechanical stability and large in preparation difficulty are solved.

The invention relates to a dielectric film with PI (polyimide) for a solid-state battery. The solid-state battery comprises a positive electrode, a negative electrode and a dielectric film located between the positive electrode and the negative electrode. The dielectric film is formed by combining PVDF (Polyvinylidene Fluoride), a plurality of LLZO (Lithium-Lanthanum-Zirconium-Oxide) particles, a polyimide (PI) modifier and LiTFSI (LiN (CF3SO2) 2, bis (trifluoromethanesulfonyl) lithium imide), and is characterized in that the dielectric film is prepared from PVDF (Polyvinylidene Fluoride), a plurality of LLZO particles, a polyimide (PI) modifier and LiTFSI (LiN (CF3SO2) 2, bis (trifluoromethanesulfonyl) lithium imide; wherein the polyimide (PI) modifier is a polymer material having good heat resistance, chemical resistance and electrical insulation; the polyimide (PI) modifier is mixed with the LLZO particles, so that the surface energy of the LLZO particles can be effectively reduced, and the surface stability of the LLZO particles can be improved.

The invention relates to the technical field of preparation of low-dielectric films, and particularly discloses a preparation device and process of a benzocyclobutenyl low-dielectric film. The preparation method comprises the following steps: S1, under the protection of inert gas, mixing a benzocyclobutenyl monomer, a photosensitizer and a specific solvent in proportion, and carrying out ultrasonic stirring to obtain a uniform photosensitive precursor solution A; s2, pretreating the surface of the base material by adopting an atmospheric pressure non-equilibrium plasma technology, and introducing an active functional group to obtain a surface-activated base material B; s3, applying gradient change coating pressure to the base material B, and uniformly coating the photosensitive precursor solution A on the surface of the base material; s4, the coated base material B sequentially passes through multi-stage temperature control drying systems in different temperature areas, and gradient heating is conducted; and S5, in a nitrogen protection atmosphere, performing high-precision curing on the dried base material by adopting an infrared laser heating technology to form the low-dielectric film, so that the influence on the service life and the performance stability of the low-dielectric film is avoided.

Procedure with the following steps: Producing a first crack-stopping layer (106-A) of a first crack-stopping structure (106) over a first integrated circuit die (50A) and along side walls of the first integrated circuit die (50A); Forming a dielectric film (106-B) over the first crack-stopping layer (106-A); Forming a second crack-stopping layer (106-C) of the first crack-stopping structure (106) over the dielectric film (106-B); and Deposition of a first gap-filling dielectric (108) around the first crack-stopping structure (106) and the first integrated circuit die (50A).