312 results about "Dielectric thin films" patented technology

The invention relates to an ultra-black film and a preparation method and application thereof. The ultra-black thin film comprises a TiAlC thin film and a low-refractive-index dielectric thin film which are alternately deposited on the surface of a substrate, and the material of the dielectric film with low refractive index comprises at least one of SiO2, CaF2 and MgF2.

The present application provides an entropy-regulated composite dielectric film, which comprises a polymer matrix; and fillers dispersed in the polymer matrix, wherein the fillers comprise Bi 4‑a M 1a Ti (3‑3b) M 2b O 12 , wherein M1 comprises at least one of lanthanum, neodymium, samarium and praseodymium, M2 comprises at least one of zirconium, hafnium and tin, 0 The entropy-regulated composite dielectric film has high temperature resistance, high breakdown strength, high polarization strength, high energy storage density and good stability.

An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a dielectric film provided on the piezoelectric layer so as to overlap at least a portion of the IDT electrode in plan view. When a thickness of the piezoelectric layer is d and a center-to-center distance between centers of adjacent ones of the electrode fingers is p, d / p is less than or equal to about 0.5. A cavity that opens on a side of the piezoelectric layer is provided in the support. The IDT electrode includes an intersection region, and first and second gap regions. The dielectric film is provided at at least a portion of the first and second gap regions, and a thermal conductivity of the dielectric film is higher than a thermal conductivity of the piezoelectric layer.

Plasma enhanced atomic layer deposition methods and apparatuses for depositing low dielectric constant doped silicon oxide films from fluorocarbosilane, fluorosilane or carbosilane precursors which are a single source of the desired dopants are provided. Conformal deposition may be achieved by utilization of silicon precursors having at least one direct silicon-fluorine bond or fluorine connected to silicon through a linker. The methods may also include fluoro carboaminosilanes or fluoroaminosilanes.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other, and a dielectric film between at least one of at least a portion of the first electrode film and the piezoelectric layer and at least a portion of the second electrode film and the piezoelectric layer.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

The invention relates to the technical field of energy storage capacitor dielectrics, and provides a high-entropy ceramic-polymer composite energy storage dielectric thin film material, a preparation method and application. The chemical composition of the material disclosed by the invention can be expressed as Sr0. 7Bi0. 2TiO3 (at) (Ba0. 25Ca0. 25La0. 25Na0. 25) TiO3 / PVDF, and is abbreviated as SBT (at) BCLNT / PVDF, the PVDF is polyvinylidene fluoride, the ratio of BCLNT to SBT is 9 wt%-18 wt%, and the ratio of SBT (at) BCLNT to PVDF is 3 wt%-12 wt%. The SBT coated BCLNT is subjected to high-entropy treatment to obtain the SBT coated BCLNT high-entropy ceramic filler with a'core-shell 'structure; and preparing the SBT-coated BCLNT / PVDF high-entropy ceramic-polymer composite energy storage dielectric film by taking the PVDF polymer as a base material and adopting a tape casting method.

The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure include bonding a first semiconductor substrate having (110) orientation on a second semiconductor substate having (100) orientation, forming a stack over the first semiconductor substrate, the stack comprising a plurality of channel layers interleaved by a plurality of sacrificial layers, patterning the stack to form a fin-shape structure, the fin-shape structure comprising a channel region and a source / drain region, recessing the source / drain region to form a source / drain trench, forming a dielectric film in the source / drain trench, and epitaxially growing an epitaxial feature over the dielectric film, the epitaxial feature being in contact with the plurality of channel layers. The epitaxial feature has (110) orientation.

The invention belongs to the technical field of thin film packaging materials, and particularly discloses acrylate containing a calixarene structure, a synthesis method of the acrylate, low-dielectric thin film packaging ink prepared from the acrylate, a use method of the low-dielectric thin film packaging ink and application of the low-dielectric thin film packaging ink. The thin film packaging ink comprises 10 to 30 parts of acrylate, 30 to 60 parts of a photocurable monomer, 10 to 30 parts of a bridge ring type photocurable monomer and 0.1 to 10 parts of a photoinitiator, wherein the acrylate adopts acrylate containing a calixarene structure; the photocurable monomer is a mixture of bifunctional acrylate and polyfunctional acrylate, and the mass ratio of the bifunctional acrylate to the polyfunctional acrylate is (1-2): (2-4). The film packaging ink has moderate viscosity and surface tension, and the formed organic barrier layer not only has high curing rate, high light transmittance, good heat resistance and low dielectric constant, but also has high Tg temperature, excellent flexibility and good adhesive force, is applied to electronic components, and can effectively block water and oxygen erosion and prolong the service life.

The invention discloses a parallel MEMS switch of a terahertz wave band, and belongs to the field of radio frequency front-end devices. The antenna is composed of a first-layer metal patch, a middle-layer dielectric plate, a second-layer metal patch, a high-resistance bias line, a dielectric film, a metal pier and a third-layer metal patch which are stacked from bottom to top. Wherein the first layer of metal patch is an integral metal ground; the middle dielectric plate is an integral dielectric layer; the second layer of metal patch comprises a coplanar waveguide signal ground, a coplanar waveguide signal line, a direct current bias electrode and a switch driving electrode; and the third layer of metal patch comprises a switch metal beam and a CPW closed bridge. The lower driving electrode of the switch is covered with a dielectric film with a larger area, the middle section of the CPW signal ground is provided with a section of lifting bridge, and the direct current bias line is wired through the bridge and connects the lower electrode of the switch to the direct current bias electrode.

A silicon capacitor may include a silicon substrate having a three-dimensional pattern, and a dielectric thin film disposed over the silicon substrate and having a structure with a crystal gradient form. A manufacturing method of a dielectric thin film capacitor may include etching a silicon substrate to form a three-dimensional pattern, depositing an amorphous thin film on the etched silicon substrate at a temperature below 300° C., and embedding crystalline grains in the deposited amorphous thin film by performing plasma treatment. A manufacturing method of a dielectric thin film capacitor may include etching a silicon substrate to form a three-dimensional pattern, depositing an amorphous thin film on the etched silicon substrate at a temperature below 300° C., and depositing a crystalline layer on the deposited amorphous thin film by performing plasma treatment.

The invention provides an electromagnetic wave-absorbing structure and a parameter determination method, and the method comprises the steps: calculating a first thickness of a matched metamaterial according to an input admittance relation and a preset conductivity of the matched metamaterial of which parameters are to be determined; determining a target surface resistance and a target period of the matched metamaterial according to the preset conductivity, the material characteristics of the matched metamaterial and the equivalent conductivity tensor of the to-be-matched metamaterial; determining the admittance of the high dielectric film according to the input admittance relation and the first thickness; based on the admittance of the high-dielectric film and the parameter admittance relation of the high-dielectric film, determining the thickness dielectric constant relation of the high-dielectric film; and determining the target dielectric constant and the second thickness of the high-dielectric film according to the relation between the target frequency, the admittance of the high-dielectric film and the thickness dielectric constant. The defects that in a traditional metamaterial method, the thickness is sensitive, the bandwidth is narrow, and the absorption efficiency is reduced in the low-frequency wave band below 1 GHz are overcome, and the absorption frequency is reduced on the premise that the electromagnetic wave absorption thickness is not changed.

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a substrate with a first surface and a second surface, where the substrate comprises glass. In an embodiment, the electronic package further comprises a via opening through the substrate, where sidewalls of the via opening have a root mean squared (RMS) surface roughness that is approximately 100 nm or greater. In an embodiment, the electronic package further comprises a liner over the sidewalls of the via opening, where an RMS surface roughness of the liner is approximately 50 nm or smaller. An electronic package may further comprise a via through the via opening.

The invention relates to the technical field of thin film deposition, and discloses uniform-heating dielectric thin film deposition equipment which comprises a main body box, a rotating assembly is installed in the main body box, and a closed processing assembly is further installed in the main body box. Through direct cooperation of the processing pipeline and the sealing seat, a processing area in the main body box and the external environment can be rapidly isolated, external air and impurities are effectively prevented from entering and interfering the dielectric film deposition process, automatic linkage of the locking action and the processing pipeline vacuumizing process can be achieved through the cooperation structure of the locking assembly, the ejector rod, the piston and the connecting cover, and the working efficiency is improved. When a machining pipeline is vacuumized, the internal pressure of a connecting cover is synchronously reduced, a piston and an ejector rod are pulled to move upwards, a connecting rod is driven to move to the position below a clamping seat along an inclined moving groove of a fixing seat, then the connecting rod is driven to be clamped to the clamping seat through a vertical clamping groove, the operation efficiency is improved, and meanwhile it is guaranteed that locking action is synchronous with the machining environment requirement; and locking failure caused by manual misoperation is avoided.

The invention belongs to the technical field of energy storage materials, and particularly relates to a two-dimensional high-entropy ceramic nanosheet / polymer composite dielectric thin film material and a preparation method and application thereof.The two-dimensional high-entropy ceramic nanosheet / polymer composite dielectric thin film material comprises a middle layer containing a KNN-coated LNBCT / PVDF-PMMA composite material, an upper layer containing a PVDF-PMMA organic polymer material and a lower layer containing a PVDF-PMMA organic polymer material; in the middle layer, the mass ratio of the KNN to the PVDF-PMMA is 2.28%-16.01%, and the mass ratio of the LNBCT to the PVDF-PMMA is 0.61%-4.32%. The dielectric thin film material prepared by the invention is applied to an energy storage capacitor, so that the technical problem that high dielectric breakdown strength and high energy storage density of the existing dielectric energy storage material cannot be considered at the same time can be solved, and the dielectric energy storage property of the material is greatly improved.

The invention relates to the field of semiconductors, in particular to a preparation method and a value fixing method of a wafer dielectric film doping concentration standard sample wafer. Comprising the following steps: S1, preparing two silicon substrates, and performing a deposition step through PECVD (Plasma Enhanced Chemical Vapor Deposition) so as to deposit buffer layers on the silicon substrates; s2, executing a deposition step on one silicon substrate through PECVD (Plasma Enhanced Chemical Vapor Deposition) so as to deposit the dielectric film layer on the buffer layer; according to the preparation method, impurities such as boron and phosphorus in the standard sample can be effectively prevented from reacting with internal or external moisture, and the problem that the impurity concentration changes along with time is solved, so that the stability is kept; the defects related to phosphorus and boron in the dielectric film during annealing and the phenomenon that the dopant diffuses towards the silicon substrate and the outside can be effectively improved; according to the valuing method disclosed by the invention, precise valuing of the contents of the dopants B and P of the dielectric film layer can be realized through ICP / MS based on the developed standard sample wafer and the auxiliary sample wafer.

The invention discloses a dielectric film for solid-state and solid-state-like lithium batteries, the dielectric film comprises a first film layer, a second film layer and a third film layer, the first film layer is connected with a positive electrode, the third film layer is connected with a negative electrode, and the second film layer is located between the first film layer and the third film layer; the first thin film layer comprises a first high polymer material; part of the first high polymer material also has the effect of a plasticizer; the first lithium salt is dispersed in the first high polymer material; the second thin film layer comprises a second polymer material; part of the second polymer material also has the effect of a plasticizer; the second lithium salt is dispersed in the second polymer material; the second inorganic ceramic is dispersed in the second high polymer material; the third thin film layer comprises a third high polymer material, and part of the third high polymer material also has the effect of a plasticizer; the third lithium salt is dispersed in the third high polymer material; and the third inorganic ceramic is dispersed in the third polymer material.

A method for processing a substrate is provided. The method includes disposing a substrate in a processing region of a process chamber and flowing a reaction gas into a remote plasma region of the process chamber, flowing a precursor gas into the processing region through the second plurality of channels in the showerhead, generating an inductively coupled plasma in the remote plasma region using the reaction gas to form plasma radicals, and exposing the precursor gas in the processing region to plasma radicals to form a dielectric film on the substrate with at least 95% step coverage.

A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

The invention relates to the field of dielectric energy storage materials, and discloses a polyimide-based composite dielectric film material and a preparation method thereof.The dielectric film is prepared from, by mass, 4-20 parts of modified barium strontium titanate and 100 parts of fluorinated polyamide acid solution, the modified barium strontium titanate is prepared from the following raw materials: hydroxylated barium strontium titanate, 3-glycidyl ether oxypropyl trimethoxy silane, perfluoropolyether alcohol and a catalyst, and the fluorinated polyamide acid solution is prepared from the following raw materials: a fluorine-containing diamine monomer and a fluorine-containing dianhydride monomer; according to the technical scheme, the polyimide film dielectric film is prepared from fluorinated polyamide and modified silane barium strontium titanate, the dispersity of barium strontium titanate in a polyimide matrix is remarkably improved, the compatibility of barium strontium titanate and fluorinated polyimide is remarkably improved, and the dielectric energy storage performance of the dielectric film is remarkably improved; the hydroxylated barium strontium titanate is modified through the 3-glycidyl ether oxypropyl trimethoxy silane and the perfluoropolyether alcohol, so that the dielectric loss of the dielectric film is remarkably reduced.

Implementations of the present disclosure generally relate to low k dielectric films disposed over a substrate. More particularly, implementations described herein provide, organic framework low k dielectric films and methods for forming the same. In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, where the film has a dielectric constant (k) of 3 or less.

The invention discloses a doping modification method of a hafnium oxide-based dielectric film, which comprises the following steps of: performing doping modification on Zr-layer under a hafnium-based laminated system, on one hand, inhibiting electric leakage by utilizing limited oxygen vacancy migration and charge balance effect in the laminated system, and on the other hand, reducing the transformation potential barrier of a polarized o phase and a non-polarized t phase through doping, thereby improving the electric leakage resistance of the film. The thickness of the film is 4-10 nm, the thicknesses of the HfO2 layer and the ZrO2 layer are 0.5-2 nm, the doping position of the doping element is Zr-layer of the laminated system, and the doping element is selected from Al, Ga, In, Sc, Y, La, Mg, Ca and Sr. The doping of the hafnium-based laminated system obtained by the doping modification method can realize higher k and lower electric leakage, and MPB is easy to realize, so that the dielectric property of the material is improved.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

The application relates to an inorganic chloride-doped polymer electrolyte hybrid dielectric film material and a preparation method and application thereof, and belongs to the technical field of dielectric film materials and devices. The inorganic chloride-doped polymer electrolyte hybrid dielectric film material has significantly enhanced capacitance and ion migration capacity, can be used for developing an organic transistor memory with multi-level response to different pulse voltages, and can realize a wide memory window of 0.548 volts at a low working voltage of-1.5 volts. The memory also has good static and dynamic storage characteristics, and can realize accurate regulation and identification of different sizes of memory windows through programming gate pulse voltage. The novel polymer electrolyte hybrid dielectric film material and the organic transistor memory with multi-level storage characteristics thereof have the advantages of simple structure, excellent performance, easy scale-up manufacturing and the like, and will have good popularization and application prospects in the field of low-power-consumption optoelectronic devices and storage technologies.

This semiconductor capacitor includes a substrate, a first capacitor, and a second capacitor. The substrate has a first main surface, and a first groove and a second groove are formed at different positions on the first main surface. The first capacitor includes a first laminated structure in which two or more first dielectric films and two or more first conductive films are alternately laminated at least on an inner surface of the first groove. The second capacitor includes a second laminated structure in which two or more second dielectric films and two or more second conductive films are alternately laminated on at least the inner surface of the second groove. The first capacitor and the second capacitor are connected in series.

A positive electrode plate is provided that includes phosphate-based ceramic particles coated with a carbon layer. [Solution] A positive electrode plate (11) containing composite ceramic particles is used in a solid or semi-solid battery. The solid or semi-solid battery includes a positive electrode (10), a negative electrode (40), and a dielectric thin film layer (45) attached between the positive and negative electrodes. The positive electrode includes a positive electrode plate. The positive electrode plate includes a positive electrode substrate (12) for supporting the positive electrode material and a positive electrode slurry layer (13) coated on the positive electrode substrate and composed of a positive electrode slurry. The positive electrode slurry includes a plurality of positive electrode particles (15) for storing or releasing lithium ions, an adhesive (17) composed of a polymer material, a dispersant (19), a plurality of conductive agents (21) for increasing the conductivity of the entire positive electrode slurry, and a plurality of composite ceramic particles (30) for guiding the lithium ions. Each composite ceramic particle includes ceramic particles and a carbon layer covering the outer surface of the ceramic particle.

A semiconductor device that includes a substrate having an insulating surface; a first electrode on the insulating surface; a dielectric film on the first electrode; and a second electrode on the dielectric film. The second electrode has a protruding shape in a sectional view.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25° C. to about 600° C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

A conductive film (102) includes: a resin film base (50) having a hard coat layer (6) on one main surface of a resin film (5); an underlying layer (20) on a hard coat layer-formed surface of the resin film base; and a metal thin film (10) on the underlying layer. The underlying layer includes at least one layer of inorganic dielectric thin film. The hard coat layer contains first fine particles having an average primary particle diameter of 10 to 100 nm. In a cross section of the hard coat layer, the proportion of an area occupied by the first fine particles is preferably 10% or more.

Disclosed herewith are a precursor, a gas mixture, and a method for depositing a dielectric film in a processing chamber. A method includes disposing a substrate on a susceptor disposed within a processing chamber; controlling a pressure level and a temperature of the processing chamber; delivering an RF power into the processing chamber; providing a precursor-containing gas mixture into the processing chamber, and applying a post-deposition process to the substrate after the dielectric film is formed on the substrate. The precursor-containing gas mixture includes a precursor and an inert gas selected from the group consisting of argon, nitrogen, and helium. The precursor includes a carbosilane having a Si-C-Si structure in a backbone of the precursor.