242 results about "Dielectric thin films" patented technology

The present application provides an entropy-regulated composite dielectric film, which comprises a polymer matrix; and fillers dispersed in the polymer matrix, wherein the fillers comprise Bi 4‑a M 1a Ti (3‑3b) M 2b O 12 , wherein M1 comprises at least one of lanthanum, neodymium, samarium and praseodymium, M2 comprises at least one of zirconium, hafnium and tin, 0 The entropy-regulated composite dielectric film has high temperature resistance, high breakdown strength, high polarization strength, high energy storage density and good stability.

An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a dielectric film provided on the piezoelectric layer so as to overlap at least a portion of the IDT electrode in plan view. When a thickness of the piezoelectric layer is d and a center-to-center distance between centers of adjacent ones of the electrode fingers is p, d / p is less than or equal to about 0.5. A cavity that opens on a side of the piezoelectric layer is provided in the support. The IDT electrode includes an intersection region, and first and second gap regions. The dielectric film is provided at at least a portion of the first and second gap regions, and a thermal conductivity of the dielectric film is higher than a thermal conductivity of the piezoelectric layer.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other, and a dielectric film between at least one of at least a portion of the first electrode film and the piezoelectric layer and at least a portion of the second electrode film and the piezoelectric layer.

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a substrate with a first surface and a second surface, where the substrate comprises glass. In an embodiment, the electronic package further comprises a via opening through the substrate, where sidewalls of the via opening have a root mean squared (RMS) surface roughness that is approximately 100 nm or greater. In an embodiment, the electronic package further comprises a liner over the sidewalls of the via opening, where an RMS surface roughness of the liner is approximately 50 nm or smaller. An electronic package may further comprise a via through the via opening.

The invention relates to the technical field of thin film deposition, and discloses uniform-heating dielectric thin film deposition equipment which comprises a main body box, a rotating assembly is installed in the main body box, and a closed processing assembly is further installed in the main body box. Through direct cooperation of the processing pipeline and the sealing seat, a processing area in the main body box and the external environment can be rapidly isolated, external air and impurities are effectively prevented from entering and interfering the dielectric film deposition process, automatic linkage of the locking action and the processing pipeline vacuumizing process can be achieved through the cooperation structure of the locking assembly, the ejector rod, the piston and the connecting cover, and the working efficiency is improved. When a machining pipeline is vacuumized, the internal pressure of a connecting cover is synchronously reduced, a piston and an ejector rod are pulled to move upwards, a connecting rod is driven to move to the position below a clamping seat along an inclined moving groove of a fixing seat, then the connecting rod is driven to be clamped to the clamping seat through a vertical clamping groove, the operation efficiency is improved, and meanwhile it is guaranteed that locking action is synchronous with the machining environment requirement; and locking failure caused by manual misoperation is avoided.

The invention discloses a dielectric film for solid-state and solid-state-like lithium batteries, the dielectric film comprises a first film layer, a second film layer and a third film layer, the first film layer is connected with a positive electrode, the third film layer is connected with a negative electrode, and the second film layer is located between the first film layer and the third film layer; the first thin film layer comprises a first high polymer material; part of the first high polymer material also has the effect of a plasticizer; the first lithium salt is dispersed in the first high polymer material; the second thin film layer comprises a second polymer material; part of the second polymer material also has the effect of a plasticizer; the second lithium salt is dispersed in the second polymer material; the second inorganic ceramic is dispersed in the second high polymer material; the third thin film layer comprises a third high polymer material, and part of the third high polymer material also has the effect of a plasticizer; the third lithium salt is dispersed in the third high polymer material; and the third inorganic ceramic is dispersed in the third polymer material.

A method for processing a substrate is provided. The method includes disposing a substrate in a processing region of a process chamber and flowing a reaction gas into a remote plasma region of the process chamber, flowing a precursor gas into the processing region through the second plurality of channels in the showerhead, generating an inductively coupled plasma in the remote plasma region using the reaction gas to form plasma radicals, and exposing the precursor gas in the processing region to plasma radicals to form a dielectric film on the substrate with at least 95% step coverage.

A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

The invention relates to the field of dielectric energy storage materials, and discloses a polyimide-based composite dielectric film material and a preparation method thereof.The dielectric film is prepared from, by mass, 4-20 parts of modified barium strontium titanate and 100 parts of fluorinated polyamide acid solution, the modified barium strontium titanate is prepared from the following raw materials: hydroxylated barium strontium titanate, 3-glycidyl ether oxypropyl trimethoxy silane, perfluoropolyether alcohol and a catalyst, and the fluorinated polyamide acid solution is prepared from the following raw materials: a fluorine-containing diamine monomer and a fluorine-containing dianhydride monomer; according to the technical scheme, the polyimide film dielectric film is prepared from fluorinated polyamide and modified silane barium strontium titanate, the dispersity of barium strontium titanate in a polyimide matrix is remarkably improved, the compatibility of barium strontium titanate and fluorinated polyimide is remarkably improved, and the dielectric energy storage performance of the dielectric film is remarkably improved; the hydroxylated barium strontium titanate is modified through the 3-glycidyl ether oxypropyl trimethoxy silane and the perfluoropolyether alcohol, so that the dielectric loss of the dielectric film is remarkably reduced.

Implementations of the present disclosure generally relate to low k dielectric films disposed over a substrate. More particularly, implementations described herein provide, organic framework low k dielectric films and methods for forming the same. In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, where the film has a dielectric constant (k) of 3 or less.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

The application relates to an inorganic chloride-doped polymer electrolyte hybrid dielectric film material and a preparation method and application thereof, and belongs to the technical field of dielectric film materials and devices. The inorganic chloride-doped polymer electrolyte hybrid dielectric film material has significantly enhanced capacitance and ion migration capacity, can be used for developing an organic transistor memory with multi-level response to different pulse voltages, and can realize a wide memory window of 0.548 volts at a low working voltage of-1.5 volts. The memory also has good static and dynamic storage characteristics, and can realize accurate regulation and identification of different sizes of memory windows through programming gate pulse voltage. The novel polymer electrolyte hybrid dielectric film material and the organic transistor memory with multi-level storage characteristics thereof have the advantages of simple structure, excellent performance, easy scale-up manufacturing and the like, and will have good popularization and application prospects in the field of low-power-consumption optoelectronic devices and storage technologies.

This semiconductor capacitor includes a substrate, a first capacitor, and a second capacitor. The substrate has a first main surface, and a first groove and a second groove are formed at different positions on the first main surface. The first capacitor includes a first laminated structure in which two or more first dielectric films and two or more first conductive films are alternately laminated at least on an inner surface of the first groove. The second capacitor includes a second laminated structure in which two or more second dielectric films and two or more second conductive films are alternately laminated on at least the inner surface of the second groove. The first capacitor and the second capacitor are connected in series.

A positive electrode plate is provided that includes phosphate-based ceramic particles coated with a carbon layer. [Solution] A positive electrode plate (11) containing composite ceramic particles is used in a solid or semi-solid battery. The solid or semi-solid battery includes a positive electrode (10), a negative electrode (40), and a dielectric thin film layer (45) attached between the positive and negative electrodes. The positive electrode includes a positive electrode plate. The positive electrode plate includes a positive electrode substrate (12) for supporting the positive electrode material and a positive electrode slurry layer (13) coated on the positive electrode substrate and composed of a positive electrode slurry. The positive electrode slurry includes a plurality of positive electrode particles (15) for storing or releasing lithium ions, an adhesive (17) composed of a polymer material, a dispersant (19), a plurality of conductive agents (21) for increasing the conductivity of the entire positive electrode slurry, and a plurality of composite ceramic particles (30) for guiding the lithium ions. Each composite ceramic particle includes ceramic particles and a carbon layer covering the outer surface of the ceramic particle.

A semiconductor device that includes a substrate having an insulating surface; a first electrode on the insulating surface; a dielectric film on the first electrode; and a second electrode on the dielectric film. The second electrode has a protruding shape in a sectional view.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25° C. to about 600° C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

Disclosed herewith are a precursor, a gas mixture, and a method for depositing a dielectric film in a processing chamber. A method includes disposing a substrate on a susceptor disposed within a processing chamber; controlling a pressure level and a temperature of the processing chamber; delivering an RF power into the processing chamber; providing a precursor-containing gas mixture into the processing chamber, and applying a post-deposition process to the substrate after the dielectric film is formed on the substrate. The precursor-containing gas mixture includes a precursor and an inert gas selected from the group consisting of argon, nitrogen, and helium. The precursor includes a carbosilane having a Si-C-Si structure in a backbone of the precursor.

The invention discloses a low-loss high-tunability BZT laminated dielectric film and a preparation method thereof, the laminated film comprises a substrate, a BZT film layer and a zinc niobate-based microwave dielectric ceramic film layer, and the chemical general formula of the zinc niobate film layer is Zn [(Ge0. 5Mo0. 5) xNb1-x] 2O6. A ceramic target material is synthesized by adopting a solid-phase reaction method, and thin film layers are sequentially deposited through a magnetron sputtering technology to construct a heterostructure. The high dielectric constant of BZT and the low loss characteristic of zinc niobate are combined, the frequency characteristic is remarkably improved, the dielectric loss is effectively reduced while the high tunability is kept, and the high-quality FOM is obtained and reaches 36.77. The film is excellent in performance and controllable in process, and has important application value in microwave communication devices such as tunable filters and phased array radars.

This invention discloses a semiconductor structure and a method for forming the semiconductor structure, aiming to solve the technical problem that dielectric thin films formed by existing processes can no longer meet the performance and speed requirements of current semiconductor structures. The semiconductor structure includes: a metal structure; and a dielectric thin film disposed between the metal structures. The dielectric thin film includes: a preferred orientation layer and an amorphous non-crystalline layer disposed on the preferred orientation layer. The preferred orientation layer is a crystal-oriented film layer, and the amorphous non-crystalline layer is a crystal-unoriented film layer. Due to the presence of the lower preferred orientation layer, the dielectric constant of the dielectric thin film in this structure is reduced, thereby effectively reducing the dielectric constant of the preferred orientation layer and the amorphous non-crystalline layer, and thus reducing the overall dielectric constant of the dielectric thin film.

Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of IDT electrodes, the first thickness being different from the second thickness.

The present invention belongs to the technical field of capacitor materials, and particularly relates to dielectric thin film materials for low- and medium-field applications, capacitors and their preparation methods. The present invention combines SrTiO3 with Bi(Mg 2 / 3 Ta 1 / 3 )O3 by using a solid-phase sintering method to prepare a ceramic target, and then deposits the ceramic target by radio frequency magnetron sputtering at different oxygen pressures to obtain dielectric thin film materials for low- and medium-field applications. By introducing Bi(Mg 2 / 3 Ta 1 / 3 )O3 into the polarization regulation of the SrTiO3 paraelectric system material, and then carrying out phase deposition growth at different oxygen pressures respectively, the lower the deposition oxygen pressure, the more defects there are inside the dielectric thin film materials for low- and medium-field applications, so as to improve the resistivity of the dielectric thin film materials for low- and medium-field applications by forming defect dipoles, increase its breakdown field strength, improve its leakage characteristics, and at the same time enhance its saturation polarization intensity.

A method includes performing an atomic layer deposition (ALD) process to form a dielectric layer on a wafer. The ALD process comprises an ALD cycle includes pulsing calypso ((SiCl3)2CH2), purging the calypso, pulsing ammonia, and purging the ammonia. The method further includes performing a wet anneal process on the dielectric layer, and performing a dry anneal process on the dielectric layer.

A semiconductor device including a first pad on a substrate extending in a first direction and a second direction, a lower electrode connected to and disposed on the first pad, first to third supporter layers disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction, a dielectric film disposed on the lower electrode and the first to third supporter layers, and an upper electrode disposed on the dielectric film. At least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions.

A negative electrode plate comprising ceramic composite particles formed by phosphoric acid and a carbon layer; the negative electrode plate is used in a solid-state or semi-solid-state battery; the solid-state or semi-solid-state battery comprises a positive electrode, a negative electrode, and a dielectric thin film disposed between the positive and negative electrodes; the negative electrode comprises the negative electrode plate; the negative electrode plate comprises: a negative electrode substrate which serves as a carrier for the negative electrode material; a layer of negative electrode mass applied to the negative electrode substrate; the layer of negative electrode mass is formed by a negative electrode mass; the negative electrode mass includes: a plurality of active negative electrode particles which serve to store or release lithium ions; an additive comprising a binder and a dispersant; a variety of conductive agents to increase the electrical conductivity of the negative electrode mass; A multitude of ceramic composite particles guide lithium ions to dispersed lithium ion channels, thereby preventing side reactions between lithium ions and the negative electrode mass due to abnormal deposition of lithium ions in the negative electrode mass. Each ceramic composite particle comprises a ceramic particle and a carbon layer coated on its outer surface. The carbon layer exhibits specific electrical conductivity and prevents excessive volume expansion of the ceramic particle when filled with lithium ions. The binder of the additive serves to adhere the active negative electrode particles, the conductive agent, and the ceramic composite particles. The dispersant of the additive serves to disperse the active negative electrode particles, the conductive agent, and the ceramic composite particles. The active negative electrode particles are dispersed in the negative electrode mass.The conductive agents and the ceramic composite particles are distributed between the active negative electrode particles.

Embodiments described herein generally relate to methods of post-treating a silicon-nitride (SiN)-based dielectric film formed on a surface of a substrate. The methods include positioning a substrate in a processing chamber. A dielectric precursor is supplied to the processing chamber. A plasma is provided to the processing chamber, in which the dielectric precursor reacts with a reactive gas in the plasma to form a silicon nitride (SiN)-based dielectric film on the substrate. A bias plasma is applied to the silicon nitride (SiN)-based dielectric film to form a condensed silicon nitride (SiN)-based dielectric film. The condensed dielectric film is cured

Disclosed herewith are a precursor, a gas mixture, and a method for depositing a dielectric film in a processing chamber. A method includes disposing a substrate on a susceptor disposed within a processing chamber; controlling a pressure level and a temperature of the processing chamber; delivering an RF power into the processing chamber; providing a precursor-containing gas mixture into the processing chamber, and applying a post-deposition process to the substrate after the dielectric film is formed on the substrate. The precursor-containing gas mixture includes a precursor and an inert gas selected from the group consisting of argon, nitrogen, and helium. The precursor includes a carbosilane having a Si—C—Si structure in a backbone of the precursor.

This invention discloses a laser post-processing device and method for large-aperture optical dielectric thin film nodule defects, relating to the field of laser technology. The laser post-processing device for large-aperture optical dielectric thin film nodule defects includes: an ultraviolet pumped laser, a focusing lens, a femtosecond laser, a scanning galvanometer, a scanning field mirror, a centrally located aperture mirror, an observation camera, an electrically driven displacement platform, and a control computer. The laser post-processing device and method for large-aperture optical dielectric thin film nodule defects provided by this invention utilize the characteristics of small focal spot and small heat-affected zone of femtosecond lasers, and with the assistance of an optical camera, accurately remove nodule defects in localized areas in real time. Furthermore, it can automatically identify and accurately locate nodule defects, achieving rapid removal of nodule defects and reducing the impact of the post-processing process on the surrounding normal film layer. Simultaneously, it reduces manual intervention, improves the degree of automation, and effectively improves the post-processing efficiency of optical dielectric thin film nodule defects.

The invention belongs to the technical field of information encryption, and provides a preparation method of a curved-surface multi-layer encryption device integrating thermochromism and infrared thermal imaging, different encryption function layers are stacked on a curved surface and integrated into a curved-surface multi-layer information encryption device in a three-dimensional space, the information storage capacity can be effectively improved without increasing the size of the device, and the cost is reduced. High information density, high function density and multi-level information encryption are realized, and higher-level information security is provided; the self-heating conductive layer is integrated inside, compared with a mode of achieving a thermal stimulation effect through external environment heating, the self-heating conductive layer needs smaller power, energy loss is greatly reduced, the heat conduction efficiency is higher, and the efficiency problem of information encryption and decryption caused by heat conduction delay is effectively solved; meanwhile, the supporting framework is preferentially formed, and the laser in-situ curing technology is combined, so that compared with extrusion type and spraying type curved surface film preparation technologies, the method has the advantages that the dielectric solution is prevented from sliding on the curved surface substrate, and the problem that the curved surface dielectric film is manufactured unevenly is effectively solved.

The invention provides a complex-phase high-voltage energy storage dielectric film, a capacitor and a preparation method of the complex-phase high-voltage energy storage dielectric film, the chemical formula of the complex-phase high-voltage energy storage dielectric film material is Bi (4-x) AxTi (3-x) BxO12, A is a + 3-valent rare earth element ion, B is a + 4-valent ion, x represents the doping amount of the A ion or the B ion, x is equal to 0.5-1, and the complex-phase high-voltage energy storage dielectric film material has a part of pyrochlore phase. By forming part of the pyrochlore phase with higher dielectric constant, the energy storage density of the film material and the compression strength of the film material are improved; by accurately controlling the sintering temperature and the material composition, the dielectric loss of the thin film material is effectively reduced, and the energy conversion efficiency is improved; the P-E linetype of the thin film material is optimized, the polarization response is more uniform and stable, and the working stability and reliability of the complex-phase high-voltage energy storage dielectric capacitor can be improved; the preparation process is simple, the production cost can be reduced, the production efficiency can be improved, and the process of converting a new material from a laboratory to the market can be accelerated.

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.