105results about "Variable resistance carrier recording" patented technology

A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.

Phase change memory cells including a phase change media can be encoded using a source of energy that is not integral with the memory cell. External sources of energy include thermal heads, such as those used in direct thermal printing or thermal transfer printing and sources of electromagnetic radiation, such as lasers. Such types of phase change memory devices can be associated with substrates that include thermochromic materials or are suitable for thermal transfer printing so that the memory cells can be encoded and print media applied to the substrate using the same source of thermal energy.

A data read / write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.

A magnetic recording apparatus comprises a magnetic field impression unit, a current supplying unit and a controlling unit t. The magnetic field impression unit impresses a magnetic field to a magnetic recording medium. The current supplying unit supplies a current to the magnetic recording medium. The controlling unit makes the current supplying unit supply the current to the magnetic recording medium while making the magnetic field impression unit impress the magnetic field to at least a unit of a magnetic recording unit of the magnetic recording medium. Thus, a information is recorded magnetically by making a direction of a magnetization of the magnetic recording unit of the magnetic recording medium in a predetermined direction.

A probe storage system, including programmable cells suitable for storing information, and methods of forming and programming the cells are disclosed. The programmable cells generally include an ion conductor, a plurality of electrodes, and a protective layer between the ion conductor and at least one of the electrodes, wherein one of the electrodes may be in the form of a probe. Electrical properties of the cells may be altered by applying energy to the structure, and thus information may be stored using the system.

An apparatus comprises a slider having an air bearing surface, a first waveguide for directing electromagnetic radiation to a focal point adjacent to the air bearing surface, a storage medium position adjacent to the air bearing surface, a detector for detecting electromagnetic radiation reflected from the storage medium, and a structure positioned adjacent to the focal point for collecting the reflected electromagnetic radiation and for transmitted the reflected electromagnetic radiation toward the detector.

There is proposed a nonvolatile information recording / reproducing device with low power consumption and high thermal stability. The information recording / reproducing device according to an aspect of the present invention includes a recording layer, and mechanism for recording information by generating a phase change in the recording layer while applying a voltage to the recording layer. The recording layer is comprised one of a Wolframite structure and a Scheelite structure.

An apparatus comprises a slider having an air bearing surface, a first waveguide for directing electromagnetic radiation to a focal point adjacent to the air bearing surface, a storage medium position adjacent to the air bearing surface, a detector for detecting electromagnetic radiation reflected from the storage medium, and a structure positioned adjacent to the focal point for collecting the reflected electromagnetic radiation and for transmitted the reflected electromagnetic radiation toward the detector.

A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.

A movable system, such as a computer storage device, having a frame, a mover configured to move relative to the frame, and a mechanical suspension operatively coupled between the frame and mover. The mechanical suspension is configured to permit planar movement of the mover while substantially preventing out-of-plane movement, and includes a first flexure configured to flex in response to movement of the mover in a first direction relative to the frame, and a second flexure configured to flex in response to relative movement occurring in a second direction.

A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.

A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.

The present invention includes a data storage device and a method of reading data in a data storage device. Accordingly, a first aspect of the present invention is a data storage device. The data storage device includes a probe tip mounted on a suspension mechanism, a data storage layer, at least one conducting layer wherein a capacitance is formed between the suspension mechanism and the at least one conducting layer and a sensor for sensing a change in the capacitance based on a displacement of the probe tip due to the presence of a bit.

A nonvolatile information recording and reproducing device exhibits low power consumption and high thermal stability. The information recording and reproducing apparatus according to an aspect of the present invention includes a recording layer and a unit for recording information by applying a voltage to the recording layer to generate a resistance change to be caused due to a phase change in the recording layer. The recording layer includes a material having a ramsdelite structure.

A readout arrangement has a base which has a flexible member supporting a probe on a free end thereof so that the probe is movable with respect to the base; a medium in which a superficial data indicative topographical feature can be formed, the superficial data indicative topographical feature being configured to be contacted by the probe, the medium and the base being arranged to be movable relative to one another; and a semiconductor element disposed with one of the base and medium, the semiconductor element being configured to be responsive to an electric field generated in response to interaction between the probe and the superficial data indicative topographical feature.

An information recording / reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Cr, Mo, W, Mn and Re, and X includes O.

The present invention pertains to a data storage device. The data storage device includes a storage medium having an electrode and an electrolyte layer positioned on the electrode. The data storage device also includes at least one probe configured to contact the electrolyte layer. In addition, the storage medium includes a voltage supply device configured to supply voltage through the at least one probe and the electrode to thereby create a circuit between the at least one probe and the electrode. The level of voltage supplied through the at least one probe allows at least one of writing, reading, and erasing operations on the one or more memory cells of the storage medium.

An electrical memory component is provided, comprising read / write probes and a chalcogenide storage media. Each read / write probe is adapted for selective electrical connection to a memory portion of the chalcogenide storage media and for performing read and write operations upon the memory portion. The chalcogenide storage media has a second plurality of memory portions, and is movably mounted relative to the first plurality of read / write probes for selective electrical connection of the read / write probes to a subset of the memory portions.

An information recording / reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Ti, Zr, Hf, V, Nb and Ta, and X includes O.

A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that is clamped between the first electrode (18) and the second electrode (13) and whose resistance value varies when an electric pulse is applied across the first electrode (18) and the second electrode (13); wherein the insulating substrate (11) has a layered structure composed of an organic dielectric thin film (112) and an inorganic dielectric layer (111) that is thinner than the organic dielectric thin film (112); with the recording layer (12) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.

A dual-layer structure phase-change type optical recording medium includes a substrate (1), a reflective layer (2), a first protective layer (3), a first recording layer (4), a second protective layer (5), a resin intermediate layer (6), a third protective layer (7), a heat release layer (8) made of Cu or a Cu alloy, a fourth protective layer (9), a second recording layer (10), a fifth protective layer (11) and a cover substrate (12). A product of a reflectance of a high-reflection part and a modulation after recording is a value equal to or higher than a lower limit value for reproduction.

A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.

An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.

An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

An information recording / reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure.

A storage device and a storage system employing the storage device. In one embodiment, the storage device comprises an electron emitter and a storage medium comprising an information layer having at least a first state and a second state for storing information. The storage device comprises a resistance measurement system coupled to the storage medium for reading the information stored at the information layer by measuring resistance to determine a state of a storage area on the information layer.

An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.

A recording medium (10) is formed by laminating a conductive layer (11), a ferroelectric layer (12), a control layer (13), and a conductive layer (14), in order. Moreover, the control layer (13) is formed from a material that has an insulation property in a normal state but becomes conductive by irradiation of an energy beam. Then, the insulation property and conductivity of the control layer (13) is changed by presence or absence, or strength or weakness of the irradiation of the energy beam (B). When the control layer (13) exhibits the conductivity, a voltage supplied between the conductive layers (11, 14) is applied to the ferroelectric layer (12). When the control layer (13) exhibits the insulation property, the application of the voltage is cut off. The application and cut-off of the voltage to the ferroelectric layer (12) realize recording of information into the ferroelectric layer (12).