The invention discloses a novel memorization material on the basis of nanocrystalline high-dielectric coefficient (ZrO2)x(SiO2)[1-x] films, wherein, 0.2<=x<=0.9, and the materials can be used to prepare non-volatile memorization device and integrated circuits for information storage or other functions.The high-dielectric coefficient (ZrO2)x(SiO2)[1-x] films has the following characteristics that: when x is smaller, the films can remain amorphous after a high-temperature quick thermal annealing process; when x is bigger, ZrO2 nanocrystalline is partly crystallized and precipitated after the high-temperature quick thermal annealing process, simultaneously the film is a insulator with a high-dielectric coefficient and a large-forbidden band width, after substituting SiO2 by ZrO2, the size of devices is reduced and excellent insulativity is remained, therefore, a non-volatile memorization device with small size, high-density and stable performance can be prepared by using the films. The present invention provides method for preparing high-dielectric coefficient (ZrO2)x(SiO2)1-x films and the method comprises sintering ZrO2 and SiO2 with an appropriate proportion to produce ceramic target materials and preparing high-dielectric coefficient zirconium silica films by using a laser burst deposition method.