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36results about "Variable capacitance carrier recording" patented technology

Nanometer scale data storage device and associated positioning system

A data storage system that includes a positioning system for positioning the write / read mechanism and the storage medium of the data storage device with respect to each other in first and second predefined directions. The positioning system comprises a positioning apparatus comprising microfabricated first and second positioning assemblies. The positioning system further comprises a controller to position a positionable support structure of the first positioning assembly in a first predefined direction within a range of positioning that is larger, than the range of movement of a moveable support structure of the first positioning assembly by controlling (A) a stationary support structure clamp in clamping and unclamping the positionable structure to and from the support structure, (B) a moveable structure clamp in clamping and unclamping the positionable support structure to and from the moveable support structure, and (C) the movement of the moveable support structure. In one embodiment, one of the write / read mechanism and the storage medium is carried by the positionable support structure so that it is positioned with the first positioning assembly. The other one of the write / read mechanism and the storage medium is positioned with the second positioning assembly. In another embodiment, the positionable support structure carries the second positioning assembly and one of the write / read mechanism and the storage medium is positioned with the second positioning assembly while the other is held stationary.
Owner:TERRASPAN

Nanometer scale data storage device and associated positioning system

A data storage system that includes a positioning system for positioning the write/read mechanism and the storage medium of the data storage device with respect to each other in first and second predefined directions. The positioning system comprises a positioning apparatus comprising microfabricated first and second positioning assemblies. The positioning system further comprises a controller to position a positionable support structure of the first positioning assembly in a first predefined direction within a range of positioning that is larger, than the range of movement of a moveable support structure of the first positioning assembly by controlling (A) a stationary support structure clamp in clamping and unclamping the positionable structure to and from the support structure, (B) a moveable structure clamp in clamping and unclamping the positionable support structure to and from the moveable support structure, and (C) the movement of the moveable support structure. In one embodiment, one of the write/read mechanism and the storage medium is carried by the positionable support structure so that it is positioned with the first positioning assembly. The other one of the write/read mechanism and the storage medium is positioned with the second positioning assembly. In another embodiment, the positionable support structure carries the second positioning assembly and one of the write/read mechanism and the storage medium is positioned with the second positioning assembly while the other is held stationary. In several embodiments, the read/write mechanism is used:to mechanically write data to and electrically read data from the storage medium. In still another embodiment, the read/write mechanism is used to optically write data to and electrically read data from the storage medium. In yet another embodiment, the read/write mechanism is acoustically aided in electrically writing data to and reading data from the storage medium.
Owner:TERRASPAN

Zirconium silicon oxide thin film with high dielectric coefficient, and preparation and use thereof

The invention discloses a novel memorization material produced on the basis of nanocrystalline high-dielectric coefficient (ZrO2)x(SiO2)1-x films, wherein, 0.2<=x<=0.9, and the materials can be used to prepare non-volatile memorization device and integrated circuits for information storage or other functions.The high-dielectric coefficient (ZrO2)x(SiO2)1-x films has the following characteristics that: when x is smaller, the films can remain amorphous after a high-temperature quick thermal annealing process; when x is bigger, ZrO2 nanocrystalline is partly crystallized and precipitated after the high-temperature quick thermal annealing process, simultaneously the film is a insulator with a high-dielectric coefficient and a large-forbidden band width, after substituting SiO2 by ZrO2, the size of devices is reduced and excellent insulativity is remained, therefore, a non-volatile memorization device with small size, high-density and stable performance can be prepared by using the films.The present invention provides method for preparing high-dielectric coefficient (ZrO2)x(SiO2)1-x films and the method comprises sintering ZrO2 and SiO2 with an appropriate proportion to produce ceramic target materials and preparing high-dielectric coefficient zirconium silica films by using a laser burst deposition method.
Owner:NANJING UNIV

Zirconium silicon oxide thin film with high dielectric coefficient, and preparation and use thereof

The invention discloses a novel memorization material on the basis of nanocrystalline high-dielectric coefficient (ZrO2)x(SiO2)[1-x] films, wherein, 0.2<=x<=0.9, and the materials can be used to prepare non-volatile memorization device and integrated circuits for information storage or other functions.The high-dielectric coefficient (ZrO2)x(SiO2)[1-x] films has the following characteristics that: when x is smaller, the films can remain amorphous after a high-temperature quick thermal annealing process; when x is bigger, ZrO2 nanocrystalline is partly crystallized and precipitated after the high-temperature quick thermal annealing process, simultaneously the film is a insulator with a high-dielectric coefficient and a large-forbidden band width, after substituting SiO2 by ZrO2, the size of devices is reduced and excellent insulativity is remained, therefore, a non-volatile memorization device with small size, high-density and stable performance can be prepared by using the films. The present invention provides method for preparing high-dielectric coefficient (ZrO2)x(SiO2)1-x films and the method comprises sintering ZrO2 and SiO2 with an appropriate proportion to produce ceramic target materials and preparing high-dielectric coefficient zirconium silica films by using a laser burst deposition method.
Owner:NANJING UNIV
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