The invention discloses a novel memorization material produced on the basis of nanocrystalline high-
dielectric coefficient (ZrO2)x(SiO2)1-x films, wherein, 0.2<=x<=0.9, and the materials can be used to prepare non-volatile memorization device and integrated circuits for
information storage or other functions.The high-
dielectric coefficient (ZrO2)x(SiO2)1-x films has the following characteristics that: when x is smaller, the films can remain amorphous after a high-temperature quick thermal annealing process; when x is bigger, ZrO2 nanocrystalline is partly crystallized and precipitated after the high-temperature quick thermal annealing process, simultaneously the film is a insulator with a high-
dielectric coefficient and a large-forbidden
band width, after substituting SiO2 by ZrO2, the size of devices is reduced and excellent insulativity is remained, therefore, a non-volatile memorization device with small size, high-density and stable performance can be prepared by using the films.The present invention provides method for preparing high-dielectric coefficient (ZrO2)x(SiO2)1-x films and the method comprises
sintering ZrO2 and SiO2 with an appropriate proportion to produce
ceramic target materials and preparing high-dielectric coefficient
zirconium silica films by using a
laser burst deposition method.